May 30, 2008 — Olympus designed its new OLS3000IR LEXT IR confocal laser scanning microscope for the non-destructive, high-resolution observation of the interior of MEMS devices, silicon wafers, and IC chips. The LEXT IR uses a 1310 nm laser to literally see through the silicon to the components. It’s the latest member of its near-IR silicon inspection microscope range.

The trend toward thinner and smaller electronics devices makes observation for research or quality control almost impossible, with many components and even circuits packed into a tight space, the company says. Joining the Olympus MX (inverted) and BX2M and BXFM (upright) silicon imaging systems, the LEXT OLS3000IR uses an infrared laser to illuminate features that cannot be seen visually — such as SIP (System in Package), 3-dimensional mounting, and CSP (Chip Scale Package) — to be inspected, measured and analyzed without any destructive preparation.

The LEXT platform was first developed for advanced metrology and surface analysis using a UV laser. With an IR laser the LEXT OLS3000IR is perfect for silicon device inspection, providing fast, efficient and as easy-to-use capabilities for ultra-fine subsurface resolution with SEM-like clarity for a wide range of imaging tasks:

— Chip gap measurement: Three-dimensional mounting chip gap can be measured as the movement of the objective when infrared light is passed through the silicon then focused on the chip and interposer. This method can also be used in the measurement of key features in micro-electromechanial systems (MEMS).

— Chip damage analysis: With the LEXT OLS3100IR, device changes during heat and moisture tests can be inspected non-destructively. For example, leakage due to melting and corrosion of copper wiring, peeling of resin parts, etc. can all be clearly observed, according to the company.

— Flip chip mounting defect analysis: In flip chip bonding, once mounted the pattern cannot be inspected using visible light. However, the silicon chip is transparent to infrared light and the interior can be observed without destroying the mounted chip. Olympus says that defect analysis is easily performed by merely placing the device under the LEXT OLS3100IR.