Samsung Electronics announced today that it has begun mass producing its six gigabit (Gb) low-power double data rate 3 (LPDDR3) mobile DRAM, based on advanced 20 nanometer (nm) process technology. The new mobile memory chip will enable longer battery run-time and faster application loading on large screen mobile devices with higher resolution.
“Our new 20nm 6Gb LPDDR3 DRAM provides the most advanced mobile memory solution for the rapidly expanding high-performance mobile DRAM market,” said Jeeho Baek, vice president, memory marketing, Samsung Electronics. “We are working closely with our global customers to offer next-generation mobile memory solutions that can be applied to a more extensive range of markets ranging from the premium to standard segments.”
Samsung’s new 6Gb LPDDR3 has a per-pin data transfer rate of up to 2,133 megabits per second (Mbps). A 3GB (gigabyte) LPDDR3 package, which consists of four 6Gb LPDDR3 chips, can be easily created for use in a wide range of mobile devices. Also, the package greatly strengthens our product portfolio for premium mobile applications.
The new 3GB package is more than 20 percent smaller and consumes about 10 percent less energy than the currently available 3GB package with 6Gb LPDDR3 chips fabricated using Samsung’s previously lowest process technology. This results in a mobile memory that is ultra-small, incredibly thin, lightning fast and significantly more power-efficient.
Utilizing Samsung’s new 20nm process also brings more than a 30 percent productivity gain, compared to the previous process. Samsung first applied 20nm technology on 4Gb DDR3 for PCs in March, for the first time in the industry, and has now expanded its use to include the company’s mobile DRAM.
In the future, Samsung will continue to introduce more advanced 20nm mobile DRAM products to further strengthen its product line-up and maintain its leadership in the high-density mobile DRAM market, as the market expands with more feature-laden flagship smartphones, high-end tablets and wearable devices.