Dow Corning, a developer of silicon and wide-bandgap semiconductor technology, announced that it now offers 150mm diameter silicon carbide (SiC) wafers under its Prime Grade portfolio. Recently launched to set new standards for 100mm SiC wafer quality, the portfolio now also offers three tiers of manufacturing quality 150mm SiC substrates – labeled Prime Standard, Prime Select and Prime Ultra. Each tier offers increasingly stringent tolerances on critical defect types that adversely impact device performance, such as micropipe density (MPD), threading screw dislocations (TSD) and basal plane dislocations (BPD).

“SiC wide-bandgap power semiconductors have rapidly evolved from a cutting-edge niche into an established technology sector that is increasingly focused on the manufacturing economies afforded by SiC crystal quality, wafer size and other critical factors,” said Tang Yong Ang, vice president, Compound Semiconductor Solutions, Dow Corning. “Dow Corning’s decision to expand its Prime Grade portfolio to include 150mm diameter SiC wafers aims to meet this very competitive demand. As we rapidly scale production of these high-quality wafers, our customers will be able to more confidently pinpoint the SiC substrate that optimizes the performance and cost of their next-generation device design while leveraging the improved economies of scale offered by larger wafer diameters.”

While many SiC wafer manufacturers promise low micropipe densities for their 150mm substrates, Dow Corning is among the first to specify low tolerances of other defect types, such as TSD and BPD. Such defects reduce device yields, and inhibit the cost efficient manufacture of large-area, next-generation power electronic devices with higher current ratings.

“Dow Corning’s close customer collaboration in both silicon and wide bandgap semiconductor technologies has given us a clear understanding of the competitive demands and opportunities in these markets,” said Gregg Zank, chief technology officer, Dow Corning.