Category Archives: 3D Integration

CEA-Leti today announced an agreement with Qualcomm Technologies, Inc., a subsidiary of Qualcomm Incorporated, to assess the feasibility and the value of Leti’s sequential 3D technology.

In recent years, Leti has been actively working on a new 3D integration technology process called sequential 3D integration that enables the stacking of active layers of transistors in the third dimension. In comparison with 3D-TSV technologies, advantageously used to stack separate die, sequential 3D technology is anticipated to process all the functions in a single semiconductor manufacturing flow. Thus, the technology allows connecting active areas at the transistor level, at a very high density as it uses a standard lithography process to align them.

According to Leti experts, this new technology is expected to allow a 50 percent gain in area and a 30 percent gain in speed compared to the same generation of technology made ​​in classical 2D. These gains are comparable to those expected in next-generation 2D technology, but the sequential 3D technology is expected to be much less complex and expensive to implement, making this technology a potential alternative to conventional planar scaling solutions.

Leti has shown a number of significant technical advances in sequential 3D technology. The arrangement between Leti and Qualcomm Technologies will allow the critical assessment of this technology in the context of practical applications, further evaluating the potential impact of this sequential 3D technology for future industrialization.

Worldwide semiconductor revenue totaled $315.4 billion in 2013, a 5.2 percent increase from 2012 revenue of $299.9 billion, according to preliminary results by Gartner, Inc. The top 25 semiconductor vendors’ combined revenue increased 6.2 percent, a significantly better performance than the rest of the market, whose revenue growth was 2.9 percent. This was, in part, due to the concentration of memory vendors, which saw significant growth in the top ranking.

Read more: Will 2014 be the next Golden Year?

“After a weak start to 2013 due to excess inventory, revenue growth strengthened in the second and third quarters before leveling off in the fourth quarter. Memory, in particular DRAM, led this growth, not due to strong demand, but rather weak supply growth,” said Andrew Norwood, research vice president at Gartner. “In fact, the overall market faced a number of demand headwinds with PC production declining 9 percent and the premium smartphone market showing signs of saturation, with growth tilting toward lower-priced, entry-level and midrange smartphone models. These demand headwinds become very visible when looking at revenue growth outside of memory, where the rest of the semiconductor market could only muster 0.4 percent growth.”

Intel recorded a 2.2 percent revenue decline (see Table 1) as strong performance in its data center and embedded systems group was not enough to offset a declining PC market, and limited traction and declining prices for its tablet and smartphone solutions. However, the company maintained the No. 1 market share position for the 22nd consecutive year, capturing 15.2 percent of the 2013 semiconductor market, down slightly from its peak of 16.5 percent in 2011.

Table 1. Top 10 Semiconductor Vendors by Revenue, Worldwide, 2013 (Millions of Dollars)

Rank 2012 Rank 2013 Vendor

2012 Revenue

2013 Estimated Revenue

2012-2013 Growth (%)

2013 Market Share (%)

1

1

Intel

49,089

48,030

-2.2

15.2

2

2

Samsung Electronics

28,622

29,644

3.6

9.4

3

3

Qualcomm

13,177

17,276

31.1

5.5

7

4

SK Hynix

8,965

12,836

43.2

4.1

10

5

Micron Technology

6,917

11,814

70.8

3.7

5

6

Toshiba

10,610

11,467

8.1

3.6

4

7

Texas Instruments

11,111

10,561

-5.0

3.3

8

8

STMicroelectronics

8,415

8,060

-4.2

2.6

9

9

Broadcom

7,846

8,011

2.1

2.5

6

10

Renesas Electronics

9,152

7,761

-15.2

2.5

    Others

146,008

149,930

2.7

47.5

    Total

299,912

315,390

5.2

100

Source: Gartner (December 2013)

As a group, memory vendors outperformed the rest of the semiconductor industry.

“Within the memory market DRAM was in the midst of a strong rebound following two years of revenue decline; the recovery started at the end of 2012 when the market was moving back into an undersupply due to lack of new capacity resulting in commodity DRAM pricing more than doubling during the year,” said Mr. Norwood.

Read more: Expect big changes to the 2013 Top 20 Semi Supplier ranking

SK Hynix and Micron Technology benefited the most from the strong memory market, propelling them both into the top five for the first time. SK Hynix’s revenue increased 43.2 percent, the strongest organic growth in the top 25. The revenue growth was due to its exposure to the booming commodity DRAM market as the industry entered an undersupply and pricing surged. Revenue could have been higher had it not been for a major fire at the company’s DRAM fab in Wuxi, China, which accounted for 50 percent of the company’s DRAM production.

Micron Technology saw the biggest revenue growth among the top 25 due to its midyear acquisition of Elpida Memory. The company benefited from the recovery in commodity DRAM pricing and strong growth for low-power DRAM where Elpida is strong. In NAND flash, Micron was able to aggressively push its NAND into the computing segment, which is projected to represent roughly 60 percent of its demand this year. Had all of Elpida’s revenue been included in the Micron number — rather than just the second half — then the U.S. company would have jumped ahead of rival SK Hynix in the rankings.

Vendor Relative Industry Performance

Market share tables by themselves give a good indication of which vendors did well or badly during a year, but they do not tell the whole story. More often than not, a strong or weak performance by a vendor is a result of the overall market growth of the device areas that the vendor participates in. Gartner’s Relative Industry Performance (RIP) index measures the difference between industry-specific growth for a company and actual growth, showing which are transforming their businesses by growing share or moving into new markets.

Market leaders in Gartner’s RIP index were MediaTek and Qualcomm, two mobile handset suppliers, which grew 35 percent and 28 percent better than their respective markets. MediaTek accomplished this by focusing on the low- and mid-tier handset segments in China and other emerging markets, a segment of the handset market that is still booming, while Qualcomm dominated the Tier 1 OEMs and high-end segments and wrestled share away from its competitors.

On the other hand, four companies underperformed expectations by more than 10 percent — Rohm, Renesas Electronics, Samsung Electronics and Sony. The three Japanese vendors were hit hard by the rapid devaluation of Japanese currency. While depreciation of a currency is generally considered as a positive factor for companies to be more competitive when exporting their products, the reality is that the main customers of Japanese semiconductor vendors are typically domestic, and pricing is mostly based in Japanese yen. As the result, yen-based revenue suffers when converted to dollars.

Samsung Electronics maintained the No. 2 position for the 12th year in a row but its overall growth was below the market and its performance in the RIP index was poor. Three reasons are behind this. First, Gartner excludes revenue generated from the fabrication of the latest chips for Apple as this is foundry revenue and not merchant sales, so they are captured separately. Secondly, DRAM revenue growth was less than the market due to Samsung’s low exposure to commodity DRAM, which saw a strong price rebound, and the fact that it faced increased competition in low-power DRAM where it is strong. Thirdly, the company’s own handset business reduced its reliance on the Exynos processor and baseband processor from Samsung’s semiconductor operation in favor of competitor Qualcomm.

Additional information is provided in the Gartner report “Market Share Analysis: Preliminary Total Semiconductor Revenue, Worldwide, 2013.” The report provides the worldwide market share rankings for the top 25 semiconductor vendors in 2013. The report is available on Gartner’s website.

Micron Technology, Inc. today announced that the company has named Rajan Rajgopal, vice president of Quality.

Rajgopal will be responsible for overseeing all aspects of Micron’s quality systems including manufacturing, customer program management and product ramps. He brings more than 25 years of experience to Micron and most recently served as the vice president of Global Quality and Customer Enablement for GLOBALFOUNDRIES in Singapore.

“Micron continues to evolve as a memory business driven by systems-level solutions, and quality plays a heightened role in serving our valued customers,” said Micron President Mark Adams. “We are excited to have Rajan join our team and leverage his experience in serving our customers in an increasingly diversified set of application segments.”

Rajgopal’s professional background includes serving in multiple executive and management positions involving customer programs, manufacturing operations and engineering at GLOBALFOUNDRIES, where he had worked since 1995. He also worked as a member of the technical staff at the Texas Instruments Semiconductor Research and Design Center in Dallas from 1989 to 1995. Rajgopal, who has received six patents and more than 20 publications, holds a bachelor of science in Electrical Engineering from the University of Texas at Austin and a master’s in Electrical Engineering from the University of Maine, Orono.

Micron Technology, Inc., is a developer in advanced semiconductor systems. Micron’s portfolio of high-performance memory technologies—including DRAM, NAND and NOR Flash—is the basis for solid state drives, modules, multichip packages and other system solutions.

Sankalp Semiconductor Private Limited, an analog mixed-signal services and solutions company from India, announced today the appointment of Mr. Dan Clein into its management team. Dan will be based out of the North America region.

Dan Clein is a seasoned industry professional with over 30 years of active involvement in the layout of Memory (DRAM, SRAM, etc.), Full Custom, Analog and Mixed-Signal designs. Until recently, Dan worked as Director-Mixed Signal Layout at PMC Sierra and was managing a team of 30+ people spread across 5 locations and 4 countries. He is well-versed in building and mentoring global engineering teams. Dan is well known for his popular book “CMOS IC Layout – Concepts, Methodologies & Tools,” which is a comprehensive treatise of all concepts of mixed-signal layout. Dan is a big preacher of methodologies and has advised on several new products from EDA companies like Mentor Graphics, Cadence, Synopsys, etc. Dan is a vivid teacher and has taught several student courses at Carleton University. Prior to PMC Sierra, Dan worked at MOSAID Technologies Canada and Motorola Semiconductor Israel.

“Dan’s addition to the management team is an exciting feeling for all of us at Sankalp,” said Samir Patel, CEO of Sankalp Semiconductor Private Limited. “His decades of experience in building global engineering teams would help Sankalp globalize and brings in a near shore experience for our customers out of the North America region” said Mr. Patel.

“Dan’s unique expertise in methodology and automation would help us drive new focused innovations towards highly differentiated solutions to our customers as they migrate to lower technology nodes.” said Mrinal Das, VP Engineering at Sankalp Semiconductor Private Limited.

Manufacturing 3D NAND designs requires overcoming formidable technical challenges to create extremely complex high-aspect-ratio structures. The resulting reliability, density, performance, and power savings benefits will continue to drive this vertical NAND transition. On December 10, 2013, Applied Materials, Inc. will host an important forum in Washington D.C. for a thought-provoking examination of the growing momentum in 3D NAND from device, system, and user perspectives.

3D NAND is clearly here to stay with leading-edge memory chipmakers focusing significant resources on this segment. But while 3D NAND promises substantial benefits in easing key planar scaling limitations, several questions remain regarding the future of this technology. How far can it be scaled? What issues will affect its scaling? Which applications will use it first? Will 3D NAND continue lowering the cost per bit? What technologies will follow?

Applied Materials and guest panelists from several industry leaders will provide insight on these critical issues in a panel titled “3D NAND Is a Reality – What’s Next?” To register for this event, please visit http://www.appliedmaterials.com/NAND-panel.

Moderator: Gill Lee, senior director, principal member of technical staff, Silicon Systems Group, Applied Materials

Panel:
Ritu Shrivastava, Ph.D. – vice president, technology development, SanDisk Corporation
Chuck Dennison – senior director, process integration, Micron Technology, Inc.
Seok-Kiu Lee – vice president, head of flash device technology group, R&D division, SK hynix Inc.
Hang-Ting Lue, Ph.D. – deputy director, Nanotechnology R&D division, Macronix International Co., Ltd.
Bradley Howard, Ph.D. – vice president, advanced technology group, Etch, Applied Materials, Inc.
Where:  Omni Shoreham Hotel,2500 Calvert Street NW, Washington, D.C.

When: Tuesday, December 10, 2013

Schedule:
5:00 – 6:00pm        Shuttle from Hilton Washington Hotel
5:00 – 6:15pm        Registration and Reception
6:15 – 7:30pm        Panel Discussion
7:30pm                 Return shuttle to Hilton Washington Hotel

Slide 14-1 Slide 14-2 Slide 14-3

High density fin formation is one of the most critical processes in the FinFET device fabrication flow. Given that a typical device is composed of an ensemble of fins, each fin must be nearly identical to avoid performance degradation arising from geometric variation. Thus, techniques for fin patterning must demonstrate the ability to form fins with a high degree of structural precision.

IBM researchers will discuss the use of directed self-assembly using block copolymers (BCP) and 193nm immersion (193i) lithography as a suitable way to make the fins of FinFETs for beyond the 10 nm node. Essentially, a topographic template pattern was created on a chemically neutral surface. Confinement of the BCP between the sidewalls of the template provides an ordering force that drives the pattern into registry with the surface topography. Electrical data produced from fins with a 29-nm pitch patterned with this approach showed good uniformity, with no signs of gross variation in critical dimensions.

(Paper#32.1, “Electrical Characterization of FinFET with Fins Formed by Directed Self Assembly at 29 nm Fin Pitch Using a Self-Aligned Fin Customization Scheme,” H. Tsai et al, IBM)

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Slide 11

Intelligent vehicle systems, particularly for autonomous self-driving applications, must be able to handle many different types of data – and a lot of it – very quickly. 3D hetero-integration technology opens up the possibility to assemble various functional blocks such as processors, memory, sensors, logic, analog, photonic, and power ICs into one stacked chip.

Tohoku University researchers continue to drive the state-of-the-art in this work. Having previously developed a 3D stacking technique for high-speed image sensors, they will take things further by detailing at the IEDM how they fabricated four stacked processors next to two stacked cache memories on a silicon interposer wafer, using reconfigured multichip-on-wafer 3D integration and backside through-silicon-via (TSV) technologies. They successfully evaluated and will discuss the essential requirements for this work, such as boundary scan, built-in self-test and self-repair functions in the stacked chips.

The images above are X-ray CT scans of TSV arrays in the four-layer stacked multicore processor chip (left) and the two-layer stacked cache memory chip (right).

(Paper #28.6, “Highly Dependable 3-D Stacked Multicore Processor System Module Fabricated Using Reconfigured Multichip-on-Wafer 3-D Integration Technology,” K.-W. Lee et al, Tohoku University)

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Slide 10

A Tohoku University paper is a good example of the benefits that can be gained when circuit design and process technology are viewed holistically.

Illustration (a) – A conventional CMOS logic chip has to rely on global interconnects between logic gates and volatile memory modules to shuttle data back and forth. The lengthy interconnects degrade the overall chip performance, while the volatile memory consumes stand-by power continuously.

Illustration (b) – By contrast, Tohoku researchers will discuss a 3D architecture that uses nonvolatile magnetic tunnel junctions (MTJs) as memory elements to improve the speed and reliability of large-scale CMOS logic ICs, while saving power. MTJs are high-speed, high-density nonvolatile devices. The researchers integrated them with CMOS logic in a 3D stack fashion.

They call their circuit architecture “nonvolatile logic-in-memory technology,” and they demonstrated it by building a nonvolatile field programmable gate array (FPGA), a ternary CAM (TCAM) memory and a microcontroller. Because the lengthy global interconnects between logic and memory were eliminated, and because MTJs are fast and nonvolatile, the technology may be suitable for ultra-fast, ultra-low power applications.

(Paper #28.2, “Challenge of MOS/MTJ-Hybrid Nonvolatile Logic-in-Memory Architecture in Dark-Silicon Era,” T. Hanyu et al, Tohoku University)

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Slide 1-1 Slide 1-2 Slide 1-3 Slide 1-4

The resolutions and frame rates of CMOS image sensors have increased greatly to meet demands for higher-definition video systems, but their design may soon be obsolete. That’s because photodetectors and signal processors lie in the same plane, on the substrate, and many pixels must time-share a signal processor. That makes it difficult to improve signal processing speed. NHK researchers developed a 3D parallel-processing architecture they call “pixel-parallel” processing, where each pixel has its own signal processor. Photodetectors and signal processors are built in different vertically stacked layers. The signal from each pixel is vertically transferred and processed in individual stacks. 3D stacking doesn’t degrade spatial resolution, so both high resolution and a high frame rate are achieved. 3D stacked image sensors have been reported previously, but they either didn’t have a signal processor in each stack or they used TSV/microbump technology, reducing resolution. NHK will discuss how photodiode and inverter layers were bonded with damascened gold electrodes to provide each pixel with analog-to-digital conversion and a pulse frequency output. A 64-pixel prototype sensor was built, which successfully captured video images and had a wide dynamic range of >80 dB, with the potential to be increased to >100 dB.

Illustration (a) shows a schematic diagram of the 3D integrated CMOS image sensor; (b) shows a conceptual diagram of the image sensor pixel; (c) is a cross-sectional scanning electron microscope image of a bonded CMOS image sensor pixel with no voids observed at the bonded interface and with the upper layer thinned to 6.5 µm; and (d) is a photograph of the bonded CMOS image sensor array, where 60-µm-square photodiodes (PD) are stacked on inverters.

(Paper #4.2, “Three-Dimensional Integrated CMOS Image Sensors with Pixel-Parallel A/D Converters Fabricated by Direct Bonding of SOI Layers,” M. Goto et al, NHK.)

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Can Intel beat TSMC?


November 25, 2013

By Zvi Or-Bach, president and CEO of MonolithIC 3D

Intel CEO Brian Krzanich, in the company Investor Meeting, presented company expansion focused on a foundry plan on Nov. 21, 2013. “You will see us focusing on a broader set of customers,” said Krzanich. “If somebody can use our silicon, and make computing better, than we want it to run better on Intel. It’s inclusive, it’s all-inclusive,” Krzanich added, as covered by Barron’s blog  Intel: Competitors Have Given Up ‘Scaling’ Advantage in Moore’s Law

Intel clearly believes that it can beat the pure play foundries by an ongoing reduction of transistor cost while improving performance and power with dimensional scaling – essentially maintaining the trend of Moore’s law just as in the past. Intel will “not take our foot off the pedal” of process technology, Krzanich explained, and he expects the company to be making parts as small as 10 nanometers in transistor size by 2015, versus today’s 22 nanometer parts. He was followed by Bill Holt, Intel’s EVP and head of semiconductor manufacturing, showing the following slide describing Intel expectations to drive down the cost per transistor.

Fig 1

Maintaining dimensional scaling is in-line with Holt’s previous slide presented at the Jefferies May 2013 Analyst Meeting:

Fig 2

Here we observe the first discrepancy where Intel says they are “continuing to scale while others are pausing to do FinFETS,” while the other foundries say that their transistor cost will not be reduced for nodes below 28nm. This was made very clear by GlobalFoundries in it recent seminars and is nicely illustrated in this ASML Semicon West 2013 slide:

Fig 3

This has also been generally accepted by analysts. Below is a slide from IBS’s Handel Jones presentation at the CEA-LETI day in June of this year:

Fig 4

Some may argue that Intel will have a hard time competing as a foundry due to potential customer concern of Intel as a competitor. This is a valid point, but it did not stop Apple to buy cell phone devices from Samsung.

Some may argue that Intel will have hard time competing due to the lack of broad EDA and IP support. This is also a valid point but Intel does not need to win all fabless designs. If Intel wins just the few super high volume designs, it may well win the war.

Some may argue that “Intel announced their high volume mobile SoFIA chips are mask fabricated at external foundry and do not use Intel internal manufacturing for at least next 2 years (2014-15). ALL of Intel’s production for standalone modem chips today is outside Intel. Conclusion being Intel still does not have the right silicon technology for mobile computing which is why X86 less than 0.1% of Smartphone market,” as one commenter at Intel Nears Foundry Inflection Point blog. This might be why Holt presented Intel’s plan to develop foundry-type processes.

“Those products were optimized primarily for performance, and so Intel had avoided the problem that can crop up when transistors are packed more densely, namely that performance of the wires connecting transistors, the interconnects, can degrade. We didn’t scale the wires as much as we could have, because the products we were building didn’t demand that.” Now, he said, “the company’s technology would be focused more on those interconnects as Intel takes the scaling lead. The result would be the ability to more nimbly move between transistors optimized for performance, on the one hand, as in server and desktop chips, and transistors optimized for low-power mobile devices.” as illustrated below:

Fig 5

It would seem that if Intel could scale transistor cost as they have done in the last 40 years then they could win these super high volume consumer-oriented designs where cost is extremely important. And TSMC is clearly taking this seriously. As was made public after they lost Altera to Intel, TSMC aligned itself to face head-on Intel’s challenge by expediting the development of FinFet technology.

As TSMC’s P/E is 14.42 while Intel’s P/E is only 12.87 the market should have responded very well to these presentations but apparently it did not — and in reverse to NASDAQ trend, Intel stock fell more than 5% the day after:

(Click to view full screen.)

(Click to view full screen.)

Nor did Altera’s stock perform well since announcing the move to Intel as a foundry, especially when compared to Xilinx who choose to stay with TSMC, as the stock price chart below illustrates:

(Click to view full screen.)

(Click to view full screen.)

The Stock market might be wrong, as it been wrong many times before, but then there are other concerns:

Why did Intel feel the need to put so much money in the ASML EUV program if they can do just as well without EUV? Does Intel reduced cost per transistor account for its escalating cost of R&D, which in 2013 averaged more than 20% of revenue vs. less than 14% in 2005? Does Intel reduced cost per transistor account for its escalating cost of capital, which, per their balance sheet on Depreciation/Depletion, averaged in 2013 more than 26% of revenue vs. less than 10% in 2011?

It is not clear what the Intel proprietary technology is that allows it to do so much better than the foundries to produce a per transistor cost reduction. It does seem that their fab equipment and especially lithography is the same. And it also unclear why the Intel per transistor costs are not impacted by the much higher cost of lithography with the double and quadruple litho steps needed in manufacturing these advanced process nodes and the extra development and process steps required.

There is one more important issue that seems to be ignored. For SoC applications, the embedded SRAM is a key factor because it dominates the die area, as we recently presented in our blog Are we using Moore’s name in vain? If Intel’s embedded SRAM is scaling each node as before, then it would represent an important advantage over the foundries. Yet Intel recently announced integration of DRAM into Haswell and promised future Xeon and Xeon Phi models that integrate memory atop processors in 3D packages instead. Will these be aggressive enough to keep the on-system memory costs scaling?

Fig 9

In short, if Intel could keep the traditional 30% cost reduction per node from 28nm to 10nm, and the foundry’s cost per transistor is staying flat, then Intel would be able to provide their foundry customers SoC products at a third of ther other foundries cost, and accordingly Intel should be able to do very well in its foundry business.