Category Archives: Applications

North America-based manufacturers of semiconductor equipment posted $2.17 billion in billings worldwide in April 2017 (three-month average basis), according to the April Equipment Market Data Subscription (EMDS) Billings Report published today by SEMI.

SEMI reports that the three-month average of worldwide billings of North American equipment manufacturers in April 2017 was $2.17 billion. The billings figure is 4.6 percent higher than the final March 2017 level of $2.08 billion, and is 48.9 percent higher than the April 2016 billings level of $1.46 billion.

“Semiconductor equipment billings levels exceed two billion dollars for the second month in a row,” said Ajit Manocha, president and CEO of SEMI.  “Solid market fundamentals, coupled with strong demand for memory for data storage and processors for smartphones, are fueling significant investments.”

The SEMI Billings report uses three-month moving averages of worldwide billings for North American-based semiconductor equipment manufacturers. Billings figures are in millions of U.S. dollars.

Billings
(3-mo. avg)
Year-Over-Year
November 2016
$1,613.3
25.2%
December 2016
$1,869.8
38.5%
January 2017
$1,859.4
52.3%
February 2017
$1,974.0
63.9%
March 2017 (final)
$2,079.7
73.7%
April 2017 (prelim)
$2,174.5
48.9%

Source: SEMI (www.semi.org), May 2017
SEMI ceased publishing the monthly North America Book-to-Bill report in January 2017. SEMI will continue publish a monthly North American Billings report and issue the Worldwide Semiconductor Equipment Market Statistics (WWSEMS) report in collaboration with the Semiconductor Equipment Association of Japan (SEAJ).

After several years of low and inconsistent growth rates primarily because of intense pricing pressure, the market for semiconductor sensors and actuators finally caught fire in 2016 with several of its largest product categories—acceleration/yaw and magnetic-field sensors and actuator devices—recording strong double-digit sales increases in the year, according to IC Insights’ new 2017 O-S-D Report—A Market Analysis and Forecast for Optoelectronics, Sensors/Actuators, and Discretes.  In addition to the easing of price erosion, substantial unit-shipment growth in sensors and actuators continues to be fed by the spread of intelligent embedded control, new wearable systems, and the expansion of applications connected to the Internet of Things, says the 2017 O-S-D Report.

The new 360-page report shows worldwide sensor sales grew 14% in 2016 to a record-high $7.3 billion, surpassing the previous annual peak of $6.4 billion set in 2015, when revenues increased 3.7%. Actuator sales climbed 19% in 2016 to an all-time high of $4.5 billion from the previous record of $3.8 billion in 2015.  The 2017 O-S-D Report forecasts total sensor sales rising by a compound annual growth rate (CAGR) of 7.5% in the next five years, reaching $10.5 billion in 2021, while actuator dollar volumes are expected to increase by a CAGR of 8.4% to nearly $6.8 billion in the same timeframe.  Figure 1 shows the relative market sizes of the five main product categories in the sensors/actuator segment, along with the projected five-year growth rates for the 2016-2021 forecast period.

The sensor/actuator market ended four straight years of severe price erosion in 2016 and finally benefitted from strong unit growth.  The average selling price (ASP) of sensors and actuators declined by -0.9% in 2016 versus an annual average of -9.3% during the four previous years (2012-2015), says IC Insights’ new O-S-D Report.  All sensor product categories and the large actuator segment registered double-digit sales growth in 2016.  It was the first time in five years that sales growth was recorded in all sensor/actuator product categories, partly due to the easing of price erosion but also because of continued strong unit demand worldwide.  Sensor/actuator shipments grew 17% in 2016 to a record-high of 20.3 billion units from 17.4 billion in 2015, when the volume also increased 17%.

Figure 1

Figure 1

Strong 2016 sales recoveries occurred in acceleration/yaw-rate motion sensors (+15%), magnetic-field sensors and electronic compass chips (+18%), and the miscellaneous other sensor category (+20%) after market declines were registered in 2015. Sales growth also strengthened in pressure sensors, including MEMS microphone chips, (+10%) and actuators (+19%) in 2016.  The new O-S-D Report forecasts sales of acceleration/yaw sensors growing 9% in 2017 to about $3.0 billion, magnetic-field sensors (and compass chips) rising 8% to nearly $2.0 billion, and pressure sensors increasing 8% to $2.7 billion this year.  Actuator sales are projected to grow 8% in 2017 to about $4.9 billion.

About 82% of the sensors/actuators market’s revenues in 2016 came from semiconductors built with microelectromechanical systems (MEMS) technology—meaning pressure sensors, microphone chips, acceleration/yaw motion sensors, and actuators that use MEMS-built transducer structures to initiate physical action in a wide range of devices, including inkjet printer nozzles, microfluidic chips, micro-mirrors, and surface-wave filters for RF signals.  MEMS-built products represented 48% of total sensor/actuator shipments in 2016, or about 9.8 billion units last year.

MEMS-based product sales climbed 15.4% in 2016 to a record-high $9.7 billion after rising 5.1% in 2015 and 5.8% in 2014.   Some inventory corrections and steep ASP erosion in MEMS-built devices have suppressed revenue growth in recent years, but this group of products—like the entire sensors/actuator market—is benefitting from increased demand in new wearable systems, IoT, and the rapid spread of intelligent embedded control, such as autonomous automotive features rolling into cars.  MEMS-based sensors and actuator sales are forecast to rise 7.9% in 2017 to $10.5 billion and grow by a CAGR of 8.0% in the 2016-2021 period to $14.3 billion, says the new O-S-D Report.

By Lung Chu, President of SEMI China

Lung250As China embarks on the Made in China 2025 plan with electronics and semiconductor technology as one of the Top 10 focus areas, China’s semiconductor industry has an unprecedented growth opportunity.  However, besides the huge investment required, China IC industry is faced with strong competition in terms of technology, products, talent, and supply chain access from many leading global layers in an increasingly interconnected world and a highly global semiconductor market.

To be successful, it is critical that China’s semiconductor industry speed up its integration into the global industry supply chain. The goal is to achieve sustainable growth through “win-win” collaboration with global partners and leveraging industry platforms to become a significant player and partner in the international semiconductor manufacturing industry ecosystem.

China semiconductor industry growth

In recent years, many new 12-inch fab projects have been announced, started construction, or in ramp-up stage in China, including UMC in Xiamen, PSC in Hefei, TSMC in Nanjing, YMTC in Wuhan and Nanjing, as well as GLOBALFOUNDRIES in Chengdu.  Many China-based foundries are adding 12-inch capacity including SMIC fabs in Shanghai, Beijing and Shenzhen, and HLMC in Shanghai area. The production capacity of these ~20 new fabs is expected to come online in the next three to five years.

SEMI has seen active interest in several local cities in attracting global and China-based companies to set up semiconductor fabrication facilities.  The strong trend for expansion and investment shows no signs of slowdown in China. The current investment fever in semiconductors in China is a balancing act ─ it will lead both to the development of a regional industry supply chain and the demand for capital investment in China. However, as with any expansion bubble, new production capacity in some mature nodes might create overcapacity and raises questions of sustainability paired with the severe shortage of skilled workers/engineers and uncertainty of future fund availability for continuing operations and investment.

Rise of China

China’s expansion in semiconductor manufacturing should be viewed through a global context.  SEMI advocates for free trade and open markets, international cooperation for intellectual property (IP) rights protection, industry Standards, and environmental protection. SEMI promotes the global electronics manufacturing supply chain and works to positively influence the growth and prosperity of its members.

In 2016, before stepping down, the U.S. Obama administration delivered a report from the Council of Advisors on Science and Technology. Part of the report addressed the rise of China’s semiconductor industry and recommended the United States should improve its environment for development of the semiconductor and high-tech industry and continue to invest in advanced technologies.

Each country will evaluate their own course as the China market expands. However, the rise of the semiconductor industry in China need not be viewed simply as a threat to the world; instead, it is a significant growth driver and business opportunity for global suppliers.  IC chips top the list of all Chinese bulk imports in terms of dollar value. China desires to develop its IC chip industry to better fulfill its inherent demand. China currently has low market share and limited technical capability in four major areas identified in the China National IC Development Guideline: IC design, manufacturing, package/testing, and equipment/material.

China is clear about its intentions with regard to growing its own semiconductor supply chain. In the short term, heavy dependency on foreign suppliers (especially equipment and material) is inevitable.  Going forward, cooperation with foreign semiconductor suppliers/partners with an open-minded and “win-win” attitude is an imperative strategy in solving the development bottleneck issues concerning equipment/materials and other key areas in China’s semiconductor industry.

SEMI China focuses on member value

China is the world’s largest manufacturing base for electronics products, as well as the world’s largest market for demand of IC chips. Now, as China’s semiconductor industry experiences a transformation in development, SEMI China is working to provide more value to its local and global members as the industry is rapidly changing. SEMI China promotes Chinese enterprises for industry growth and prosperity, and helps outstanding local companies advance in the international market. SEMI China is also using its global, specialized, and localized industry association platform to promote the development of the semiconductor industry in China.

SEMI China has 11 industry committees and is committed to SEMI global values and the China region. All the SEMI China committees have the strong connections needed to communicate and collaborate not only with China’s semiconductor industry, but with the global ecosystem.

SEMI, the global trade association that advances the growth and prosperity of electronics manufacturing, was the world’s first semiconductor industry group, established in 1970. It has witnessed the flourishing development of the semiconductor industry over the last 47 years and continues to be devoted to promoting the healthy development of the industry. SEMI is keeping pace with the industry and offering specialized and global platform services to the entire industry ecosystem. In the last two years, SEMI became a strategic partner with both FlexTech Alliance and the MEMS & Sensors Industry Group (MSIG). In the future, SEMI is also providing association services for the Fab Owner Association (FOA) to continue expanding collaboration along the electronics manufacturing supply chain. The intent is to include a wider span of the interdependent electronics manufacturing supply chain and the key adjacent opportunities that drive global growth opportunities.

SEMICON China is an industry event platform organized in partnership with major chip manufacturers, packaging and testing companies in China, and suppliers of equipment and materials worldwide. The world’s leaders come to discuss global industry trends, cutting-edge technologies and market opportunities on the same stage, as well as the development of global and Chinese semiconductor industries. This year, the importance of SEMICON China was validated ─ with over 69,000 attendees and a record number of exhibitors ─ the largest SEMICON show ever.

Global competition in semiconductor manufacturing has long been a part of the environment with growth starting in the U.S. and spreading to Europe, Japan, Korea, Taiwan, Southeast Asia, and China. Global competition has resulted in new innovations and a global march to the demanding cadence of Moore’s Law. Compared to other countries, China’s semiconductor industry is relatively weak and the barriers to entry for leading-node production remain challenging. Despite this, China is moving forward ─ with a focus to increase domestic semiconductor chip demand. The Chinese M&A wave is another growth driver for the industry. I hope that going forward we can all embrace the industry’s growth, and not fear China’s advancement.

 

Racyics GmbH announced today it has launched makeChip, a design service platform, developed using GLOBALFOUNDRIES’ 22FDX process technology and supported by Cadence. Available to start-ups, design experts, research institutes, and universities, makeChip is a central gateway to design integrated circuits based on advanced semiconductor technologies.

The platform provides an IT infrastructure with a full set of EDA tool installations and technology data setup such as PDKs, foundation IP, and complex IP. All tools and design data are linked by Racyics’ silicon-proven design flow and project management system. The turnkey environment enables any makeChip customer to realize complex systems on chips (SoCs) in the most advanced technology nodes.

GF’s 22nm FD-SOI technology, 22FDX, provides advantages in power efficiency and production cost. One key factor to a successful design, leveraging the full potential while achieving shortest time-to-market, is the support of a highly experienced design enablement team.

As a part of GF’s FDXcelerator Partner Program, Racyics  makeChip will provide comprehensive support for the most advanced technologies and thus helps smaller players to realize their enormous innovative potential.

“We want to move start-ups, small and medium sized businesses, and academia to the leading-edge of the game. With makeChip, we enable them to quickly execute analog, mixed-signal and digital designs in GF’s 22FDX technology, so they can develop the hardware basis for high-volume applications in the fields of IoT and Industry 4.0,” stated Holger Eisenreich, CEO of Racyics.

“Our 22FDX technology is quickly becoming a platform of choice for market-focused applications that require low power and operational efficiency with an affordability advantage,” said Alain Mutricy, senior vice president of Product Management at GF. “This collaboration with Racyics and Cadence will help lower the barrier of entry for SMEs, start-ups, and academia.”

Access to makeChip includes a complete digital design flow with advanced silicon-proven solutions from Cadence without additional costs for non-commercial academic projects. For commercial projects, different contract agreements will be applied.

“The Cadence full-flow digital solution, is a perfect match for the makeChip design platform. Users are enabled to meet their power, performance and area targets, “ said Jens Werner, Vice President, Technical Field Operation, at Cadence. “The makeChip platform will help to grow design starts in Europe and beyond.”

Racyics provides its in-house 0.4V IP for 22FDX to makeChip customers. It is free of charge in the frame of non-commercial projects and enables platform users to be the first in the world to explore an ultra-low voltage design space and uses its unparalleled potential for energy-efficient operation.

Scientists have greatly expanded the range of functional temperatures for ferroelectrics, a key material used in a variety of everyday applications, by creating the first-ever polarization gradient in a thin film.

The achievement, reported May 10 in Nature Communications by researchers at the Department of Energy’s Lawrence Berkeley National Laboratory (Berkeley Lab), paves the way for developing devices capable of supporting wireless communications in extreme environments, from inside nuclear reactors to Earth’s polar regions.

Ferroelectric materials are prized for having a spontaneous polarization that is reversible by an applied electric field and for the ability to produce electric charges in response to physical pressure. They can function as capacitors, transducers, and oscillators, and they can be found in applications such as transit cards, ultrasound imaging, and push-button ignition systems.

Berkeley Lab scientists created a strain and chemical gradient in a 150-nanometer-thin film of barium strontium titanate, a widely used ferroelectric material. The researchers were able to directly measure the tiny atomic displacements in the material using cutting-edge advanced microscopy at Berkeley Lab, finding gradients in the polarization. The polarization varied from 0 to 35 microcoulombs per centimeter squared across the thickness of the thin-film material.

On the left is a low-resolution scanning transmission electron microscopy (STEM) image of a ferroelectric material that is continuously graded from barium strontium titanate (BSTO, top) to barium titanate (BTO, bottom). The material is grown on a gadolinium scandate (GSO) substrate buffered by a strontium ruthenate (SRO) bottom electrode. To the right are local nanobeam diffraction-based 2D maps of a-axis and c-axis lattice parameters that confirm large strain gradients in the ferroelectric material. The material is promising as electrically-tunable capacitors with extreme temperature stability. Credit: Anoop Damodaran/Berkeley Lab

On the left is a low-resolution scanning transmission electron microscopy (STEM) image of a ferroelectric material that is continuously graded from barium strontium titanate (BSTO, top) to barium titanate (BTO, bottom). The material is grown on a gadolinium scandate (GSO) substrate buffered by a strontium ruthenate (SRO) bottom electrode. To the right are local nanobeam diffraction-based 2D maps of a-axis and c-axis lattice parameters that confirm large strain gradients in the ferroelectric material. The material is promising as electrically-tunable capacitors with extreme temperature stability. Credit: Anoop Damodaran/Berkeley Lab

Tossing out textbook predictions

“Traditional physics and engineering textbooks wouldn’t have predicted this observation,” said study principal investigator Lane Martin, faculty scientist at Berkeley Lab’s Materials Sciences Division and UC Berkeley associate professor of materials and engineering. “Creating gradients in materials costs a lot of energy–Mother Nature doesn’t like them–and the material works to level out such imbalances in whatever way possible. In order for a large gradient like the one we have here to occur, we needed something else in the material to compensate for this unfavorable structure. In this case, the key is the material’s naturally occurring defects, such as charges and vacancies of atoms, that accommodate the imbalance and stabilize the gradient in polarization.”

Creating a polarization gradient had the beneficial effect of expanding the temperature range for optimal performance by the ferroelectric material. Barium titanate’s function is strongly temperature-dependent with relatively small effects near room temperature and a large, sharp peak in response at around 120 degrees Celsius. This makes it hard to achieve well-controlled, reliable function as the temperature varies beyond a rather narrow window. To adapt the material to work for applications at and around room temperature, engineers tune the chemistry of the material, but the range of temperatures where the materials are useful remains relatively narrow.

“The new polarization profile we have created gives rise to a nearly temperature-insensitive dielectric response, which is not common in ferroelectric materials,” said Martin. “By making a gradient in the polarization, the ferroelectric simultaneously operates like a range or continuum of materials, giving us high-performance results across a 500-degree Celsius window. In comparison, standard, off-the-shelf materials today would give the same responses across a much smaller 50-degree Celsius window.”

Beyond the obvious expansions to hotter and colder environments, the researchers noted that this wider temperature range could shrink the number of components needed in electronic devices and potentially reduce the power draw of wireless phones.

“The smartphone I’m holding in my hand right now has dielectric resonators, phase shifters, oscillators–more than 200 elements altogether–based on similar materials to what we studied in this paper,” said Martin. “About 45 of those elements are needed to filter the signals coming to and from your cell phone to make sure you have a clear signal. That’s a huge amount of real estate to dedicate to one function.”

Because changes in temperature alter the resonance of the ferroelectric materials, there are constant adjustments being made to match the materials to the wavelength of the signals sent from cell towers. Power is needed to tune the signal, and the more out of tune it is, the more power the phone needs to use to get a clear signal for the caller. A material with a polarization gradient capable operating over large temperatures regimes could reduce the power needed to tune the signal.

Faster detectors enable new imaging techniques

Understanding the polarization gradient entailed the use of epitaxial strain, a strategy in which a crystalline overlayer is grown on a substrate, but with a mismatch in the lattice structure. This strain engineering technique, commonly employed in semiconductor manufacturing, helps control the structure and enhance performance in materials.

Recent advances in electron microscopy have allowed researchers to obtain atomic-scale structural data of the strained barium strontium titanate, and to directly measure the strain and polarization gradient.

“We have established a way to use nanobeam scanning diffraction to record diffraction patterns from each point, and afterwards analyze the datasets for strain and polarization data,” said study co-author Andrew Minor, director of the National Center for Electron Microscopy at Berkeley Lab’s Molecular Foundry, a DOE Office of Science User Facility. “This type of mapping, pioneered at Berkeley Lab, is both new and very powerful.”

Another key factor was the speed of the detector, Minor added. For this paper, data was obtained at a rate of 400 frames per second, an order of magnitude faster than the 30-frame-per-second rate from just a few years ago. This technique is now available for users at the Foundry.

“We’re seeing a revolution in microscopy related to the use of direct electron detectors that is changing many fields of research,” said Minor, who also holds an appointment as a UC Berkeley professor of materials science and engineering. “We’re able to both see and measure things at a scale that was hard to imagine until recently.”

Altair Semiconductor (altair-semi.com), a provider of LTE chipsets, today announced that it has become an Associate Member of the GSMA, with a focus on accelerating the delivery of new connected devices and services in the Internet of Things (IoT) space. The GSMA represents the interests of mobile operators worldwide, uniting nearly 800 mobile operators and 300 companies in the broader mobile ecosystem.

Altair plays a pivotal role in actualizing the Internet of Things with a portfolio of low-cost and power-efficient LTE chipsets. The company provides secure and robust cellular connectivity for a range of IoT applications. It recently announced the ALT1250 dual-mode CAT-M1 and NB1 IoT chipset that features ultra-low power consumption, integrated GNSS location services and embedded hardware-based security features.

“We’re pleased to welcome Altair to the GSMA,” said Gregory Geodjenian, Director of Membership for the GSMA. “Altair is among the leading players in cellular IoT, and we look forward to the company taking an active role in our industry work.”

With a portfolio supporting a wide range of LTE categories and use cases – from cutting edge, high-speed broadband equipment to ultra-low power, IoT-optimized devices – Altair’s LTE and IoT connectivity solutions are used by the world’s leading operators, OEMs and ODMs.

“Joining the GSMA provides Altair with the platform to enhance and strengthen our global profile, becoming part of a community of industry leaders for potential collaboration and strategic partnerships,” said Eran Eshed, Co-founder and VP of Worldwide Sales and Marketing for Altair. “Altair is in a strong market position to drive the development and adoption of cellular-based IoT solutions.”

A team of researchers, led by the University of Minnesota, have discovered a new nano-scale thin film material with the highest-ever conductivity in its class. The new material could lead to smaller, faster, and more powerful electronics, as well as more efficient solar cells.

The discovery is being published today in Nature Communications, an open access journal that publishes high-quality research from all areas of the natural sciences.

Researchers say that what makes this new material so unique is that it has a high conductivity, which helps electronics conduct more electricity and become more powerful. But the material also has a wide bandgap, which means light can easily pass through the material making it optically transparent. In most cases, materials with wide bandgap, usually have either low conductivity or poor transparency.

“The high conductivity and wide bandgap make this an ideal material for making optically transparent conducting films which could be used in a wide variety of electronic devices, including high power electronics, electronic displays, touchscreens and even solar cells in which light needs to pass through the device,” said Bharat Jalan, a University of Minnesota chemical engineering and materials science professor and the lead researcher on the study.

Currently, most of the transparent conductors in our electronics use a chemical element called indium. The price of indium has generally gone up over the last two decades, which has added to the cost of current display technology. As a result, there has been tremendous effort to find alternative materials that work as well, or even better, than indium-based transparent conductors.

In this study, researchers found a solution. They developed a new transparent conducting thin film using a novel synthesis method, in which they grew a BaSnO3 thin film (a combination of barium, tin and oxygen, called barium stannate), but replaced elemental tin source with a chemical precursor of tin. The chemical precursor of tin has unique, radical properties that enhanced the chemical reactivity and greatly improved the metal oxide formation process. Both barium and tin are significantly cheaper than indium and are abundantly available.

“We were quite surprised at how well this unconventional approach worked the very first time we used the tin chemical precursor,” said University of Minnesota chemical engineering and materials science graduate student Abhinav Prakash, the first author of the paper. “It was a big risk, but it was quite a big breakthrough for us.”

Jalan and Prakash said this new process allowed them to create this material with unprecedented control over thickness, composition, and defect concentration and that this process should be highly suitable for a number of other material systems where the element is hard to oxidize. The new process is also reproducible and scalable.

They further added that it was the structurally superior quality with improved defect concentration that allowed them to discover high conductivity in the material. They said the next step is to continue to reduce the defects at the atomic scale.

“Even though this material has the highest conductivity within the same materials class, there is much room for improvement in addition, to the outstanding potential for discovering new physics if we decrease the defects. That’s our next goal,” Jalan said.

According to the latest research from Strategy Analytics, global smartphone shipments grew 6 percent annually to reach 353 million units in Q1 2017. Samsung recaptured first position with 23 percent global smartphone marketshare, while Apple dipped to 14 percent share. OPPO surged 78 percent annually and was once again the star performer.

Linda Sui, Director at Strategy Analytics, said, “Global smartphone shipments grew a steady 6 percent annually from 333.1 million units in Q1 2016 to 353.3 million in Q1 2017. The global smartphone market reached a bottom in the first quarter of 2016, when it fell 3 percent, but demand has picked back up and the growth outlook for this year is improving due to economic recovery and stronger consumer sentiment in major regions like China and Brazil.”

Neil Mawston, Executive Director at Strategy Analytics, added, “Samsung shipped 80.2 million smartphones worldwide in Q1 2017, rising 2 percent annually from 79.0 million units in Q1 2016. Samsung recaptured first place this quarter, after losing top spot to Apple in the previous Q4 2016 holiday season. Samsung has done well to recover quickly from its recent Galaxy Note 7 battery fiasco, and we expect the new Galaxy S8 portfolio will help to maintain Samsung’s upward momentum through the middle of 2017. Apple fell 1 percent annually and shipped a lackluster 50.8 million smartphones for 14 percent marketshare worldwide in Q1 2017. Apple iPhone shipments have declined year-on-year in four of the past 5 quarters. Apple has been unable to capitalize on Samsung’s Note 7 missteps, and it is clear that Apple has to do something radical with its rumored upcoming iPhone 8 portfolio in the second half of this year to arrest the ongoing slowdown.”

Woody Oh, Director at Strategy Analytics, added, “Huawei maintained third position with 10 percent global smartphone marketshare in Q1 2017, up from 8 percent a year ago. Huawei’s smartphone growth rate has more than halved, to 22 percent annually in Q1 2017, compared with 64 percent annual growth in Q1 2016. Huawei is facing intense competition from OPPO, Vivo and other emerging Chinese rivals such as Gionee.”

Linda Sui, Director at Strategy Analytics, added, “OPPO shipped a healthy 27.6 million smartphones and maintained fourth position with a record 8 percent global marketshare in Q1 2017. OPPO grew 78 percent annually in the quarter, outperforming all its major rivals. OPPO is now just two percentage points of marketshare behind Huawei and closing in fast. If current trends continue, OPPO could soon be battling Huawei for third position in the global smartphone market. Vivo held fifth place, capturing a record 6 percent global smartphone marketshare in Q1 2017, leaping from 4 percent a year ago. Vivo’s range of Android models, such as the V3 and X7, are proving wildly popular in China, taking share from rivals such as Xiaomi, Samsung and Apple. Meanwhile, LG returned to 6th place with 4 percent global smartphone share, as it performed well in North America and leapt ahead of ZTE, Xiaomi and others.”

Exhibit 1: Global Smartphone Vendor Shipments and Marketshare in Q1 2017 1

Global Smartphone Vendor Shipments (Millions of Units) Q1 ’16 Q1 ’17
Samsung 79.0 80.2
Apple 51.2 50.8
Huawei 28.3 34.5
OPPO 15.5 27.6
Vivo 13.5 22.1
LG 13.5 14.8
Others 132.1 123.3
Total 333.1 353.3
Global Smartphone Vendor Marketshare (%) Q1 ’16 Q1 ’17
Samsung 23.7% 22.7%
Apple 15.4% 14.4%
Huawei 8.5% 9.8%
OPPO 4.7% 7.8%
Vivo 4.1% 6.3%
LG 4.1% 4.2%
Others 39.7% 34.9%
Total 100.0% 100.0%
Total Growth: Year-over-Year (%) -3.4% 6.1%
Source: Strategy Analytics

The full report, Global Smartphone Shipments Hit 353 Million in Q1 2017, is published by the Strategy Analytics Wireless Smartphone Strategies (WSS) service, details of which can be found here: http://tinyurl.com/kzv9t4g.

Sigenics, Inc. has received a $1M award from the National Institutes of Health (NIH) to develop electronics technology that is key to a brain-based visual prosthesis system. The Sigenics award is part of an $11.8 million grant to Illinois Institute of Technology (IIT) funded by the White House BRAIN Initiative (Brain Research through Advancing Innovative Neurotechnologies). The project’s goal is to test an artificial vision system that may provide visual perception to people with blindness.

The intracortical visual prosthesis (ICVP) system will translate images, captured by a glasses-mounted camera, into patterns of electrical stimulation and wirelessly deliver them to the visual cortex of the brain. A group of miniature 16-channel implantable stimulator modules, called wireless-floating-microelectrode-arrays (WFMA), that use Sigenics-designed wireless electronic chips will deliver the patterned electrical stimulation to the user’s brain through ultraminiature needle-like electrodes; about five of the electrode tips could be placed at the end of a human hair. Sigenics has also developed the non-implanted hardware that will process the camera image and prepare it for communication with the brain.

Mr. Glenn DeMichele and Dr. Douglas Kerns, Sigenics’ Director of Engineering and Chief Technology Officer respectively, have been working with IIT for over 20 years toward the clinical deployment of this technology.  Sigenics’ CEO, Dr. Philip Troyk, is a professor of biomedical engineering at IIT, and is principal investigator for the NIH project.

“This innovative project is the beginning of a bright future, where technology is applied in novel ways to treat disability and disease,” said DeMichele. “Our company is very excited and honored to be part of the exceptional team doing this pioneering work.”

The ICVP project is supported by the National Institute Of Neurological Disorders And Stroke of the National Institutes of Health under Award Number UG3NS09555. The content here is solely the responsibility of the authors and does not necessarily represent the official views of the National Institutes of Health.

STMicroelectronics (NYSE: STM) announced today the appointment of Jean-Marc Chery as Deputy CEO, effective July 1, 2017. Chery currently serves as Chief Operating Officer and, in his new role, he will continue to report to Carlo Bozotti, ST’s President and CEO.

In this new role, Chery will hold overall responsibility for Technology and Manufacturing as well as for Sales and Marketing.

A new organization will be also put in place. Its goal is to continue to build on the success of ST’s strategy, focused on Smart Driving and Internet of Things, with a strong market-driven and innovation approach.

ST’s Executive Team members will be:

·         Orio Bellezza, President, Global Technology and Manufacturing
·         Marco Cassis, President, Global Sales and Marketing
·         Claude Dardanne, President, Microcontrollers and Digital ICs Group
·         Carlo Ferro, Chief Financial Officer and President, Finance, Legal, Infrastructure and Services
·         Marco Monti, President, Automotive and Discrete Group
·         Georges Penalver, Chief Strategy Officer and President, Strategy, Communication, Human Resources and Quality
·         Benedetto Vigna, President, Analog, MEMS and Sensors Group.

These appointments and new organization are effective July 1st, 2017, upon shareholder approval of the reappointment of Carlo Bozotti as the sole member of the Managing Board and President and CEO of ST, at the Company’s next Annual General Meeting.

Chery began his career in the Quality organization of Matra, the French engineering group. In 1986, he joined Thomson Semiconducteurs, which subsequently became ST, and held various management positions in product planning and manufacturing, rising to lead ST’s wafer fabs in Tours, France, and later in Rousset, France. In 2005, Chery took charge of ST’s Front-End Manufacturing in Asia Pacific. In 2008, he was promoted Chief Technology Officer and assumed additional responsibilities for Manufacturing and Quality (2011) and the Digital Product Sector (2012). In 2014, he was promoted Chief Operating Officer.

Chery chairs the Board of STS, ST’s manufacturing joint venture in China, and holds board membership at the European microelectronics R&D program AENEAS.
Jean-Marc Chery was born in Orleans, France, in 1960, and graduated with a degree in Engineering from the ENSAM engineering school in Paris, France.