Category Archives: Device Architecture

SEMI today announced that SEMICON Japan 2016, at Tokyo Big Sight on December 14-16, has increased exhibition and programming to keep pace with high-growth semiconductor segments in Japan. SEMICON Japan, celebrating its 40th anniversary, is the leading electronics event in Japan, with more than 700 exhibitors and 35,000 attendees.

With the world’s largest installed fab capacity of over 4.1 million (200mm equivalent) wafers per month and its diverse product mix, Japan is well-positioned to meet the increasing demands of the new world of electronics – from innovations in mobile technologies to the growing “World of IoT” devices.  SEMICON Japan 2016 connects the players and companies across the electronics manufacturing supply chain by facilitating communications and partnerships. Highlights of the exhibition area include:

  • Themain exhibit zone includes a Front-end Process zone and a Back-end/Materials Process zone.
  • “World of IoT (Internet of Things)”, a “show-within-a-show,” is where semiconductor manufacturing intersects IoT applications including wearable, health care, medical, automotive, and more. The World of IoT this year newly expands its scope to include flexible hybrid electronics (FHE), an essential enabling technology for IoT applications. Exhibiting companies include Japanese flexible and printed electronics companies from key institutes and associations for the industry area.
  • The Sustainable Manufacturing Pavilion, features solutions for the expanding IoT market driving 200mm lines; exhibitors include used and refurbished equipment, cleanroom-related, environmental safety, and more.
  • The Manufacturing Innovation Pavilion showcases innovations for leading-edge lower-cost semiconductor devices; exhibitors include advanced lithography, 2.5D/3D-IC, innovative manufacturing systems, specialty materials, OLED/LED/PE manufacturing equipment and materials.
  • Innovation Village, an interactive exposition showcase arena. Exhibitors are early-stage startups seeking funding, partners, and media exposure in the domain of electronics, materials, IT, tele-communications, bio, med-tech, environment, security or hardware.

For complete information of exhibits and programs, visit www.semiconjapan.org/en.

 

Overall revenue for the power semiconductors market globally dropped slightly in 2015, due primarily to macroeconomic factors and application-specific issues, according to a new report from IHS Markit (Nasdaq: INFO), a world leader in critical information, analytics and solutions.

The global market for power semiconductors fell 2.6 percent to $34 billion in 2015, the report says. Discrete power semiconductor product revenue declined 10.1 percent, while power module revenues decreased by 11.4 percent and power integrated-circuit (IC) revenues increased by 4.5 percent overall.

The report identifies Infineon Technologies as last year’s leading power semiconductor manufacturer, with 12 percent of the market, Texas Instruments with 11 percent and STMicroelectronics with 6 percent.

“While Texas Instruments previously led the market in 2014, the company was overtaken by Infineon Technologies in 2015, following its acquisition of International Rectifier and LS Power Semitech,” said Richard Eden, senior analyst, IHS Markit. “Infineon was the leading global supplier of both discrete power semiconductors and power modules, and the fourth-largest supplier of power management ICs. Infineon has been the leading supplier of discretes for several years, but overtook Mitsubishi Electric to lead the power module market for the first time in 2015, again, due to the International Rectifier and LS Power Semitech acquisitions.”

Figure 1

Figure 1

According to the latest Power Semiconductor Market Share Report from IHS Markit, while Infineon Technologies’ acquisition of International Rectifier was the largest acquisition last year, several other deals also changed the terrain of the power semiconductor market landscape. Key deals in 2015 included the following: MediaTek acquired RichTek; Microchip acquired Micrel; NXP Semiconductors acquired Freescale Semiconductor; NXP Semiconductors also created WeEn Semiconductors, a joint venture with Beijing JianGuang Asset Management Co. Ltd (JAC Capital); CSR Times Electric merged with China CNR Corporation to form CRRC Times Electric; and ROHM Semiconductor acquired Powervation.

“Companies were active in acquisitions for several reasons — especially the low financing cost in multiple regions of the world, which meant that borrowing rates in the United States and European Central bank were nearly zero,” said Jonathan Liao, senior analyst, IHS Markit. “In addition, the acquiring company typically increases its revenues and margins by taking the acquired company’s existing customers and sales without incurring marketing, advertising and other additional costs.”

The Power Semiconductor Market Share Report, part of the Power Semiconductor Intelligence Service from IHS Markit, offers insight into the global market for power semiconductor discretes, modules and integrated circuits. This year’s report includes Power ICs for the first time, as well as discrete power semiconductors and power semiconductor modules. For more information about purchasing IHS Markit information, contact the sales department at [email protected].

POET Technologies Inc. (OTCQX:POETF) (TSX Venture:PTK), a developer of opto-electronics fabrication processes for the semiconductor industry, today announced that it has taken one more significant step toward its goal of developing a fully integrated commercial opto-electronic technology platform.

The milestone achieved is the first demonstration of functional Hetero-junction Field Effect Transistors (HFETs) down to 250nm effective gate lengths on the same proprietary epitaxy and utilizing the same integrated process sequence that was previously used to demonstrate high performance detectors. This milestone is the latest in POET’s initiative to integrate a detector, HFET and laser together into a single chip, the three key components of an active optical cable, a current market target for POET.

“Two of the three critical individual pieces of an integrated opto-electronic product are now in place and undergoing their respective optimization cycles,” said Dr. Subhash Deshmukh, POET’s Chief Operating Officer.  “As reported earlier, we have encountered delays in completing the VCSEL milestone.  The VCSEL continues to be our focus, even while we simultaneously make progress on other aspects of the technology.  The characterization that has been done to date on the VCSEL points to required optimization of a few layers in a very complex and unique epitaxial stack and fine tuning of the resonant cavity mode. The new and optimized epitaxial structure is expected to be delivered to the foundry for processing over the next couple of months,” said Dr. Deshmukh.  “We have not uncovered any fundamental show-stoppers.  We are charting new territory here and as pointed out at the recent town hall meeting and at the annual meeting of shareholders, technical issues are commonly encountered throughout the R&D process and we are systematically understanding and addressing these issues.”

POET has already demonstrated electrical functionality of the VCSEL with desired thyristor characteristics and demonstrated lasing modes through optical pumping of the VCSEL cavity (in other words light emission was detected on the epitaxial wafer surface).  However in order to enable electrical pumping of the VCSEL, the team has had to redesign some aspects of the epitaxial stack. VCSEL functionality was previously verified in a lab setting and the functionality of that original laser has been retested and reconfirmed.

“POET management is delighted to report this new achievement and reaffirms their confidence in the roadmap and progress in the lab to fab to commercialization of monolithic opto-electronic products. We will provide the next update around the earnings call, which we intend to schedule for early Q4 2016,” said Dr. Suresh Venkatesan.

Europe’s largest electronics manufacturing exhibition SEMICON Europa (25-27 October) will take place in Grenoble at ALPEXPO. SEMICON Europa connects exhibitors and attendees to collaborate and network with over 5,800 engineers, executives, and key decision-makers. Over 70 percent of visitors make buying and investment decisions. SEMICON Europa brings Europe together for the latest advances in IC manufacturing, flexible hybrid electronics, MedTech, automotive electronics, imaging, design and fabless, Smart Manufacturing, materials, power electronics, and more.

Highlights of SEMICON Europa include:

  • Pavilions and Cluster Segments: Design and Fabless; Imaging; MEMS, Test & Packaging; Secondary Equipment; Innovation Village; and ALLE DES CLUSTERS
  • Materials Package: Includes Power Electronics Conference and 2016FLEX (flexible hybrid electronics), plus sessions on Electronics for Automotive, Advanced Materials, MedTech and Photonics
  • Smart and Sustainable Manufacturing Conference: Features Smart Manufacturing presentations from NXP Semiconductor, ST Microelectronics, Technische Universitat Dresden; plus Sustainable Manufacturing presentations from Intel, Infineon Technologies, DAS Environmental Expert GmbH, and University of Dublin

Featuring over 100 hours of technical sessions and presentations, SEMICON Europa also includes:

  • Market Briefing
  • Semiconductor Manufacturing & Technology: 20th Fab Management Forum plus sessions on Lithography, Photonics, and MEMS
  • Packaging Conference and Integrated Test sessions
  • 2016FLEX Europe: Silicon electronics and flexible systems, flexible electrical components, materials advancements, applications and new developments
  • Application and Innovation: Imaging Conference, Power Electronics Conference, and sessions on MedTech, Automotive Electronics, and “What’s Next?”

SEMICON Europa rotates between Grenoble (France) and Dresden (Germany), two of Europe’s largest epicenters. With the support of public and private stakeholders across Europe, the new SEMICON Europa enables exhibitors to reach new audiences and business partners and take full advantage of the strong microelectronic clusters in Europe. Over 350 exhibiting companies at SEMICON Europa represent the suppliers of Europe’s leading electronics companies. Learn more about exhibiting at SEMICON Europa.

SEMICON Europa 2016 sponsors include: e2v, EV Group, Lam Research, NovaCentrix, SiConnex, SPIL Siliconware, Tokyo Electron, and VAT.  To secure your exhibition space and/or to learn more about SEMICON Europa (exhibition or registration), please visit: www.semiconeuropa.org/en.

Toshiba America Electronic Components, Inc. (TAEC) will be on hand at the Flash Memory Summit (FMS) this week to showcase its latest memory and storage solutions. The inventor and one of the world’s largest producers of NAND flash, Toshiba will leverage FMS as a stage to highlight key technologies, including its BiCS FLASH 64-layer, 256Gb 3D flash memory – and to debut an all-flash solution for big data analytics. The company will also give one of the Summit’s keynote presentations. In keeping with this year’s FMS theme of high density NAND flash memory for vertical applications, Toshiba will focus on the needs of the enterprise, data center, automotive, industrial, mobile and client markets. Toshiba will be located in its theater-style booth (#407) on the show floor at the Santa Clara Convention Center from August 9-11.

Toshiba’s Shigeo (Jeff) Ohshima, technology executive, SSD, and Yoichiro Tanaka, senior fellow, will jointly present a keynote session titled: “New 3D Flash Technologies Offer Both Low Cost and Low Power Solutions.” Taking place on Tuesday, August 9 from noon – 12:30 p.m., the session will focus on the need for multiple 3D technologies to support today’s new flash applications. Emphasis will be placed on the data-intensive tasks such as real-time analytics, computational genomics, cloud computing, and video and image processing that are driving the need for high-density, low-cost solutions.

3D Flash Memory: Toshiba Continues to Lead the Way
Toshiba’s 3D flash memory solution, BiCS FLASH, will play a prominent role this year at FMS. Based on Toshiba’s cutting-edge stacking process, 3D BiCS FLASH makes larger capacities possible for enterprise applications, surpassing the capacity of mainstream two dimensional NAND flash memory while enhancing reliability and endurance and boosting performance.

With samples now shipping, Toshiba’s 64-layer 3D flash memory builds on the company’s reputation as leaders in this space – Toshiba was the first to introduce 48-layer 3D flash memory, which it debuted in March of last year. Underlining this commitment to next-generation memory solutions and furthering its momentum in the market, Toshiba recently celebrated the opening of its new Fab 2. This new semiconductor fabrication facility is dedicated to the production of its 3D flash memory solutions.

Additionally, Toshiba will showcase its new BG series solid state drive (SSD) family. Toshiba’s new single-package ball grid array (BGA) NVMe PCI Express (PCIe) Gen3 x2 SSD features BiCS FLASH deploying 3-bit-per-cell (TLC) technology, and utilizes an in-house Toshiba-developed controller and firmware for a fully vertically developed solution. This helps to ensure that the technology is tightly integrated for optimal performance, power consumption and reliability.

Flashmatrix Revealed and More
FMS will mark the debut of Toshiba’s new, all-flash, big data analytic platform technology: Flashmatrix. This platform represents a new breed of superconverged infrastructure that features integrated compute, storage and network elements optimized for high performance. This makes it suited for hybrid cloud architectures and edge-based applications that require highly distributed analytic capabilities. Flashmatrix will be demoed in the Toshiba booth.

The recently launched OCZ RD400 NVM Express® M.2 SSD Series will also be demoed at the Toshiba booth, running live in an ORIGIN PC MILLENNIUM desktop. The RD400 Series outperforms SATA SSDs by more than 4.5 times in sequential read (up to 2,600MB/s), and more than 3 times in sequential write performance (up to 1,600MB/s), increasing storage bandwidth for data-intensive workloads. ORIGIN PC is currently leveraging the performance of RD400 1024GB SSDs in several system configurations to provide ample storage capacity for custom gaming and professional PC builds.

Designers of solar cells may soon be setting their sights higher, as a discovery by a team of researchers has revealed a class of materials that could be better at converting sunlight into energy than those currently being used in solar arrays. Their research shows how a material can be used to extract power from a small portion of the sunlight spectrum with a conversion efficiency that is above its theoretical maximum — a value called the Shockley-Queisser limit. This finding, which could lead to more power-efficient solar cells, was seeded in a near-half-century old discovery by Russian physicist Vladimir M. Fridkin, a visiting professor of physics at Drexel, who is also known as one of the innovators behind the photocopier.

The team, which includes scientists from Drexel University, the Shubnikov Institute of Crystallography of the Russian Academy of Sciences, the University of Pennsylvania and the U. S. Naval Research Laboratory recently published its findings in the journal Nature Photonics. Their article “Power conversion efficiency exceeding the Shockley-Queisser limit in a ferroelectric insulator,” explains how they were able to use a barium titanate crystal to convert sunlight into electric power much more efficiently than the Shockley-Queisser limit would dictate for a material that absorbs almost no light in the visible spectrum — only ultraviolet.

A phenomenon that is the foundation for the new findings was observed by Fridkin, who is one of the principal co-authors of the paper, some 47 years ago, when he discovered a physical mechanism for converting light into electrical power — one that differs from the method currently employed in solar cells. The mechanism relies on collecting “hot” electrons, those that carry additional energy in a photovoltaic material when excited by sunlight, before they lose their energy. And though it has received relatively little attention until recently, the so-called “bulk photovoltaic effect,” might now be the key to revolutionizing our use of solar energy.

The limits of solar energy

Solar energy conversion has been limited thus far due to solar cell design and electrochemical characteristics inherent to the materials used to make them.

“In a conventional solar cell — made with a semiconductor — absorption of sunlight occurs at an interface between two regions, one containing an excess of negative-charge carriers, called electrons, and the other containing an excess of positive-charge carriers, called holes,” said Alessia Polemi, a research professor in Drexel’s College of Engineering and one of the co-authors of the paper.

In order to generate electron-hole pairs at the interface, which is necessary to have an electric current, the sunlight’s photons must excite the electrons to a level of energy that enables them to vacate the valence band and move into the conduction band — the difference in energy levels between these two bands is referred to as the “band gap.” This means that in photovoltaic materials, not all of the available solar spectrum can be converted into electrical power. And for sunlight photon energies that are higher than the band gap, the excited electrons will lose it excess energy as heat, rather than converting it to electric current. This process further reduces the amount of power can be extracted from a solar cell.

“The light-induced carriers generate a voltage, and their flow constitutes a current. Practical solar cells produce power, which is the product of current and voltage,” Polemi said. “This voltage, and therefore the power that can be obtained, is also limited by the band gap.”

But, as Fridkin discovered in 1969 — and the team validates with this research — this limitation is not universal, which means solar cells can be improved.

New life for an old theory

When Fridkin and his colleagues at the Institute of Crystallography in Moscow observed an unusually high photovoltage while studying the ferroelectric antimony sulfide iodide — a material that did not have any junction separating the carriers — he posited that crystal symmetry could be the origin for its remarkable photovoltaic properties. He later explained how this “bulk photovoltaic effect,” which is very weak, involves the transport of photo-generated hot electrons in a particular direction without collisions, which cause cooling of the electrons.

This is significant because the limit on solar power conversion from the Shockley-Queisser theory is based on the assumption that all of this excess energy is lost — wasted as heat. But the team’s discovery shows that not all of the excess energy of hot electrons is lost, and that the energy can, in fact, be extracted as power before thermalizing.

“The main result — exceeding [the energy gap-specific] Shockley-Queisser [power efficiency limit] using a small fraction of the solar spectrum — is caused by two mechanisms,” Fridkin said. “The first is the bulk photovoltaic effect involving hot carriers and second is the strong screening field, which leads to impact ionization and multiplication of these carriers, increasing the quantum yield.”

Impact ionization, which leads to carrier multiplication, can be likened to an array of dominoes in which each domino represents a bound electron. When a photon interacts with an electron, it excites the electron, which, when subject to the strong field, accelerates and ‘ionizes’ or liberates other bound electrons in its path, each of which, in turn, also accelerates and triggers the release of others. This process continues successively — like setting off multiple domino cascades with a single tipped tile — amounting to a much greater current.

This second mechanism, the screening field, is an electric field is present in all ferroelectric materials. But with the nanoscale electrode used to collect the current in a solar cell, the field is enhanced, and this has the beneficial effect of promoting impact ionization and carrier multiplication. Following the domino analogy, the field drives the cascade effect, ensuring that it continues from one domino to the next.

“This result is very promising for high efficiency solar cells based on application of ferroelectrics having an energy gap in the higher intensity region of the solar spectrum,” Fridkin said.

Building toward a breakthrough

“Who would have expected that an electrical insulator could be used to improve solar energy conversion?” said Jonathan E. Spanier, a professor of materials science, physics and electrical engineering at Drexel and one of the principal authors of the study. “Barium titanate absorbs less than a tenth of the spectrum of the sun. But our device converts incident power 50 percent more efficiently than the theoretical limit for a conventional solar cell constructed using this material or a material of the same energy gap.”

This breakthrough builds on research conducted several years ago by Andrew M. Rappe, Blanchard Professor of Chemistry and of Materials Science & Engineering at the University of Pennsylvania, one of the principal authors, and Steve M. Young, also a co-author on the new report. Rappe and Young showed how bulk photovoltaic currents could be calculated — which led Spanier and collaborators to investigate if higher power conversion efficiency could be attained in ferroelectrics.

“There are many exciting reports utilizing nanoscale materials or phenomena for improving solar energy conversion,” Spanier said. “Professor Fridkin appreciated decades ago that the bulk photovoltaic effect enables free electrons that are generated by light and have excess energy to travel in a particular direction before they cool or ‘thermalize’–and lose their excess energy to vibrations of the crystal lattice.”

Rappe was also responsible for connecting Spanier to Fridkin in 2015, a collaboration that set in motion the research now detailed in Nature Photonics — a validation of Fridkin’s decades-old vision.

“Vladimir is internationally renowned for his pioneering contributions to the field of electroxerography, having built the first working photocopier in the world,” Rappe said. “He then became a leader in ferroelectricity and piezoelectricity, and preeminent in understanding light interactions with ferroelectrics. Fridkin explained how, in crystals that lack inversion symmetry, photo-excited electrons acquire asymmetry in their momenta. This, in turn, causes them to move in one direction instead of the opposite direction. It is amazing that the same person who discovered these bulk photovoltaic effects nearly 50 years ago is now helping to harness them for practical use in nanomaterials.”

Dmitry Fedyanin from the Moscow Institute of Physics and Technology and Mario Agio from the University of Siegen and LENS have predicted that artificial defects in the crystal lattice of diamond can be turned into ultrabright and extremely efficient electrically-driven quantum emitters. Their work published in New Journal of Physics demonstrates the potential for a number of technological breakthroughs, including the development of quantum computers and secure communication lines, which, in contrast to previously proposed schemes, would be able to operate at room temperature.

The research conducted by Dmitry Fedyanin and Mario Agio is focused on the development of efficient electrically-driven single-photon sources — devices that emit single photons when an electrical current is applied. In other words, using such devices, one can generate a photon “on demand” by simply applying a small voltage across the devices, the probability of an output of zero photons is vanishingly low and generation of two or more photons simultaneously is fundamentally impossible.

Until recently, it was thought that quantum dots (nanoscale semiconductor particles) are the most promising candidates for true single-photon sources. However, they operate only at very low temperatures, which is their main drawback – mass application would not be possible if a device has to be cooled with liquid nitrogen or even colder liquid helium, or using refrigeration units, which are even more expensive and power-hungry. At the same time, it was known that certain point defects in the crystal lattice of diamond, which occur when foreign atoms (such as silicon or nitrogen) enter the diamond accidentally or through targeted implantation, can efficiently emit single photons at room temperature. However, this has only been achieved by optical excitation of these defects using external high-power lasers. This method is ideal for research in scientific laboratories, but it is very inefficient in practical devices. Experiments with electrical excitation, on the other hand, did not yield the best results — in terms of brightness, diamond sources lost out significantly (by several orders of magnitude) to quantum dots. As there were no theories describing the photon emission from colour centres in diamonds under electrical excitation, it was not possible to assess the potential of these single-photon sources to see if they could be used as a basis for the quantum devices of the future.

The new publication gives an affirmative answer — defects in the structure of diamond at the atomic level can be used to design highly efficient single-photon sources that are even more promising than their counterparts based on quantum dots.

Operation at the single?photon level will not only increase the energy efficiency of the existing data processing and data transmission devices by more than one thousand times, but will also lay the foundations for the development of novel quantum devices. Building quantum computers is still a prospect of the future, but secure communication lines based on quantum cryptography are already starting to be used. However, today they do not use true single-photon sources; instead, they rely on what are known as attenuated lasers. This means that not only is there a high probability of sending zero photons into a channel, which greatly reduces the speed of data transfer, but there is also a high probability of sending two, three, four, or more light quanta simultaneously. One could intercept these “extra” photons and neither the sender nor the recipient would know about it. This makes the communication channel vulnerable to eavesdropping and quantum cryptography loses its main advantage – fundamental security against all types of attacks.

For quantum computing it is also essential to have the ability to manipulate individual photons. The quantum of light can be used to represent a qubit – the fundamental unit of quantum information processing, – which is a superposition of two or more quantum states. For example, a qubit can be encoded in the polarization of a single photon. The advantage of the optical quantum computing paradigm is that one can natively combine quantum computations with quantum communication and design high-performance, large and scalable quantum supercomputers, which is not possible to do using other physical systems, such as superconducting circuits or trapped ions.

Dmitry Fedyanin and Mario Agio are the first to successfully reveal the mechanism of electroluminescence of colour centres in diamond and develop a theoretical framework to quantify it. They found that not all states of colour centres can be excited electrically, despite the fact that they may be “accessible” under optical excitation. This is because under optical pumping defects behave like isolated atoms or molecules (such as hydrogen or helium), with virtually no interaction with the diamond crystal. Electrical excitation, on the other hand, is based on the exchange of electrons between the defect and the diamond crystal. This not only brings limitations, but also opens up new possibilities. For example, according to the researchers, certain defects can emit serially two photons at two different wavelengths from two different charge states in a single act of the electroluminescence process. This feature could lead to the development of a fundamentally new class of quantum devices that had simply been disregarded before because these processes are not possible with optical excitation of colour centers. But the most important result of the study is that the researchers found out why high-intensity single-photon emission from colour centers was not observed under electrical pumping. The reason for this was the technologically complex process of doping of diamond by phosphorus, which cannot provide sufficiently high density of conduction electrons in diamond.

The calculations show that using modern doping technologies it is possible to create a bright single-photon source with an emission rate of more than 100,000 photons per second at room temperature. It is truly remarkable that the emission rate only increases as the device temperature increases achieving more than 100 million photons per second at 200 degrees Celsius. “Our single-photon source is one of few, if not the only optoelectronic device that should be heated in order to improve its performance, and the effect of improvement is as high as three orders of magnitude. Normally, both electronic and optical devices need to be cooled by attaching heat sinks with fans, or by placing them in liquid nitrogen,” says Dmitry Fedyanin from the Laboratory of Nanooptics and Plasmonics at MIPT. According to him, the technological improvement of diamond doping will further increase the brightness 10-100 times.

One hundred million photons is very low compared to household light sources (e.g. a normal light bulb emits more than 10^18 photons per second), but it should be emphasized that the entire flow of photons is created by a tiny (~10^-10 metres in size) defect in the crystal lattice of diamond and, unlike a light bulb, photons follow strictly one after the other. For the quantum computers mentioned above, around ten thousand photons per second would be enough — the possibility of developing a quantum computer is currently limited by entirely different factors. In quantum communication lines, however, the use of electrically-driven diamond single-photon sources will not only guarantee complete security, but will also greatly increase the speed of information transfer compared to the pseudo single-photon sources based on attenuated lasers used today.

ON Semiconductor (Nasdaq: ON) this week announced that it is joining the Original Equipment Suppliers Association (OESA), which champions the business interests of more than 430 member automotive suppliers. All members also belong to the parent Motor and Equipment Manufacturers Association (MEMA), which represents more than 1,000 companies from both the original equipment and aftermarket segments of the light vehicle and commercial vehicle industries.

Joining these organizations enables ON Semiconductor to work more closely with its customers on the policy issues that matter to the automotive industry, such as the promotion of advanced driver assistance systems (ADAS). MEMA estimates that ADAS technologies alone have the potential to prevent 30 percent of all crashes, and ON Semiconductor is a supplier of the components that are used in these systems.

“As the #2 ranked non-microcontroller automotive semiconductor supplier, we have long recognized the importance of working closely with customers to promote the policies and technologies that will advance innovation in vital areas like safety and sustainability,” said Lance Williams, vice president of automotive strategy and OEM development at ON Semiconductor. “OESA and MEMA are two of the automotive industry’s most well respected trade associations, and we look forward to expanding our collaborations with their more than 1,000 member companies.”

IBM (NYSE:  IBM) scientists have created randomly spiking neurons using phase-change materials to store and process data. This demonstration marks a significant step forward in the development of energy-efficient, ultra-dense integrated neuromorphic technologies for applications in cognitive computing.

An artistic rendering of a population of stochastic phase-change neurons which appears on the cover of Nature Nanotechnology, 3 August 2016. Credit: IBM Research

An artistic rendering of a population of stochastic phase-change neurons which appears on the cover of Nature Nanotechnology, 3 August 2016. Credit: IBM Research

Inspired by the way the biological brain functions, scientists have theorized for decades that it should be possible to imitate the versatile computational capabilities of large populations of neurons. However, doing so at densities and with a power budget that would be comparable to those seen in biology has been a significant challenge, until now.

“We have been researching phase-change materials for memory applications for over a decade, and our progress in the past 24 months has been remarkable,” said IBM Fellow Evangelos Eleftheriou. “In this period, we have discovered and published new memory techniques, including projected memorystored 3 bits per cell in phase-change memory for the first time, and now are demonstrating the powerful capabilities of phase-change-based artificial neurons, which can perform various computational primitives such as data-correlation detection and unsupervised learning at high speeds using very little energy.”

The results of this research are appearing today on the cover of the peer-reviewed journal Nature Nanotechnology.

The artificial neurons designed by IBM scientists in Zurich consist of phase-change materials, including germanium antimony telluride, which exhibit two stable states, an amorphous one (without a clearly defined structure) and a crystalline one (with structure). These materials are the basis of re-writable Blu-ray discs. However, the artificial neurons do not store digital information; they are analog, just like the synapses and neurons in our biological brain.

In the published demonstration, the team applied a series of electrical pulses to the artificial neurons, which resulted in the progressive crystallization of the phase-change material, ultimately causing the neuron to fire. In neuroscience, this function is known as the integrate-and-fire property of biological neurons. This is the foundation for event-based computation and, in principle, is similar to how our brain triggers a response when we touch something hot.

Exploiting this integrate-and-fire property, even a single neuron can be used to detect patterns and discover correlations in real-time streams of event-based data. For example, in the Internet of Things, sensors can collect and analyze volumes of weather data collected at the edge for faster forecasts. The artificial neurons could be used to detect patterns in financial transactions to find discrepancies or use data from social media to discover new cultural trends in real time. Large populations of these high-speed, low-energy nano-scale neurons could also be used in neuromorphic coprocessors with co-located memory and processing units.

IBM scientists have organized hundreds of artificial neurons into populations and used them to represent fast and complex signals. Moreover, the artificial neurons have been shown to sustain billions of switching cycles, which would correspond to multiple years of operation at an update frequency of 100 Hz. The energy required for each neuron update was less than five picojoule and the average power less than 120 microwatts — for comparison, 60 million microwatts power a 60 watt lightbulb.

“Populations of stochastic phase-change neurons, combined with other nanoscale computational elements such as artificial synapses, could be a key enabler for the creation of a new generation of extremely dense neuromorphic computing systems,” said Tomas Tuma, a co-author of the paper.

Cascade Microtech, a FormFactor company (NASDAQ: FORM), and a supplier of solutions that enable precision measurements of discrete devices and integrated circuits at the wafer level, today announced the release of a comprehensive low-frequency noise measurement solution for device modeling, characterization and reliability testing with MeasureOne solution partner Keysight Technologies.

As the semiconductor industry has moved to smaller devices with lower power consumption, modern semiconductor processes have put forth devices where noise plays a bigger role in overall circuit system performance. Measuring and modeling low-frequency noise becomes imperative, as this noise can impair signal processing circuitry in both signal generation and receiver circuitry. Furthermore, the industry has now adopted 1/f and random telegraph noise (RTN) metrics as leading indicators for reliability, embracing these measurements for process control in semiconductor production.

True noise immunity is essential in a measurement environment that seeks precise 1/f data from 0.03 Hz to 40 MHz. One of the biggest challenges in measuring component noise is avoiding data corruption by other noise sources in the system. Creating a noise-free measurement environment remains a costly and time-consuming pursuit for device and circuit researchers to develop on their own. Additionally, when equipment is sourced from multiple suppliers, it can be challenging to specify test system integration and performance. Measurement functionality must be validated and proven on-site before the first device can be tested, often requiring data correlation between different locations. It can take weeks, or even months to arrive at the first measurements.

Cascade Microtech and Keysight Technologies have teamed up to provide semiconductor device characterization engineers a noise measurement system that integrates advanced low-frequency device noise measurement and analysis with wafer-level measurements in a single, powerful platform capable of managing full wafer-level characterization. Cascade Microtech’s 200 mm and 300 mm probe stations, with both probes and shielding hardware, combined with Keysight’s Advanced Low Frequency Noise Analyzer and WaferPro Express software, allow a test engineer to quickly solve challenging measurement problems like device oscillation, power line noise, repeatability, and shielding from ambient radiation. The collaboration of these two companies has resulted in a fully-integrated wafer-level 1/f device characterization solution with guaranteed system configuration as well as integration, installation, training and functional on-site qualification and validation. All backed by over 25 years of Cascade Microtech and Keysight working together to enable customer success.

“This is yet another example of how the Keysight and Cascade Microtech wafer-level measurement solution program is able to address a very challenging measurement application with a complete turnkey solution,” said Gregg Peters, Vice President and General Manager, Aerospace and Defense Solutions Group, Keysight Technologies. “We have a long history of collaborating with Cascade Microtech to understand the specific measurement challenges presented by emerging technologies, and ensuring that we provide tools that work seamlessly together. We’ve accomplished that again with the introduction of the 1/f wafer-level measurement solution, a comprehensive solution for low-frequency noise measurement.”

“Cascade Microtech and Keysight have a longstanding commitment to enabling customer success, and have worked closely together throughout the development process of Keysight’s new Advanced Low-Frequency Noise Analyzer to ensure smooth integration with the Cascade Microtech wafer probe stations,” said Mike Slessor, president and CEO of FormFactor, Inc. “Our MeasureOne program offers a framework for collaboration with industry-leading partners like Keysight to offer test and measurement solutions with validated performance. Together, we can offer our customers the assurance that their complex wafer probing systems are validated and performance is optimized. Our customers benefit from faster time to first measurement and therefore faster time to market with new devices.”