Category Archives: Device Architecture

NXP Semiconductors N.V. today announced an expansion to its portfolio of 48V Gallium Nitride (GaN) RF power transistors optimized for Doherty power amplifiers for use in current and next-generation cellular base stations. The four new transistors collectively cover cellular bands from 1805 to 3600 MHz, meeting the needs of wireless carriers for superior performance at higher frequencies.

With the wireless spectrum shortage, wireless carriers are exploring higher frequencies to accommodate the exponential annual increases in traffic. These networks require RF power transistors and amplifiers that deliver higher performance over wider signal bandwidths, as well as higher efficiency and ruggedness, higher output power and smaller footprints.

The four new NXP GaN transistors are specifically designed to meet these challenges. The transistors have high efficiency and gain, and are extremely rugged, with the ability to deliver their rated performance with an impedance mismatch (VSWR) greater than 10:1. These transistors, designed for use in Doherty power amplifiers, are optimized for seamless integration with digital predistortion linearization systems.

The new products introduced today are:

  • A2G22S251-01S: Ultra wideband symmetrical Doherty two device solution covering 1805 to 2170 MHz (365 MHz bandwidth). In a symmetric Doherty, it delivers an average RF output power of 71 W (450 W peak), gain of 16.5 dB, and drain efficiency of 46% in concurrent multiband operation at 8 dB back-off configured. The part is housed in a NI-400S-2S air-cavity ceramic package.
  • A2G26H281-04S: NXP’s first in-package Doherty transistor covering 2496 to 2690 MHz, with average RF output power of 50 W (288 W peak), gain of 15.3 dB, and drain efficiency of 57% configured in a NI-780S-4L air-cavity ceramic package.
  • A2G35S160-01S and A2G35S200-01S: Two-transistor Doherty amplifier solution covering 3400 to 3600 MHz with 53 W average RF output power (331 W peak), gain of 13.8 dB, and drain efficiency of 46%. Each of these transistors is housed in a NI-400S-2S air-cavity ceramic package.

“Cellular customers are actively pursuing GaN technology especially in higher frequency bands. Given its leadership in the cellular base station market, NXP is committed to being a dominant source of top-quality GaN products,” said Paul Hart, executive vice president and general manager of NXP’s RF power business unit. “Our new transistors fully harness the inherent strengths of GaN enabling broad bandwidth, efficient and compact solutions.”

A breakthrough by an Australian collaboration of researchers could make infra-red technology easy-to-use and cheap, potentially saving millions of dollars in defence and other areas using sensing devices, and boosting applications of technology to a host of new areas, such as agriculture.

When light falls on a very thin, uniform layer almost all of it is reflected (right-hand arrows). By etching thin grooves in the film, the light is directed sideways and almost all of it is absorbed (left-hand arrows) even though the amount of material is very small. Insets show electron micrographs of the structuring. The absorbing layer is only 0.041 μm thick. Credit: Dr Thomas P. White, Australian National University.

When light falls on a very thin, uniform layer almost all of it is reflected (right-hand arrows). By etching thin grooves in the film, the light is directed sideways and almost all of it is absorbed (left-hand arrows) even though the amount of material is very small. Insets show electron micrographs of the structuring. The absorbing layer is only 0.041 μm thick. Credit: Dr Thomas P. White, Australian National University.

Infra-red devices are used for improved vision through fog and for night vision and for observations not possible with visible light; high-quality detectors cost approximately $100,000 (including the device at the University of Sydney) some require cooling to -200°C.

Now, research spearheaded by researchers at the University of Sydney has demonstrated a dramatic increase in the absorption efficiency of light in a layer of semiconductor that is only a few hundred atoms thick – to almost 99 percent light absorption from the current inefficient 7.7 percent.

The findings will be published overnight in the high-impact journal Optica.

Co-author from the University of Sydney’s School of Physics, Professor Martijn de Sterke, said the team discovered perfect thin film light absorbers could be created simply by etching grooves into them.

“Conventional absorbers add bulk and cost to the infrared detector as well as the need for continuous power to keep the temperature down. The ultrathin absorbers can reduce these drawbacks,” Professor de Sterke said.

“By etching thin grooves in the film, the light is directed sideways and almost all of it is absorbed, despite the small amount of material – the absorbing layer is less than 1/2000th the thickness of a human hair,” he said.

Co-lead author Dr Björn Sturmberg, who carried out the research as a PhD student at the University of Sydney with the support of the Australian Renewable Energy Agency, said the findings did not rely upon a particular material but could be applied to many naturally occurring weak absorbers.

“There are many applications that could greatly benefit from perfectly absorbing ultra-thin films, ranging from defence and autonomous farming robots to medical tools and consumer electronics,” Dr Sturmberg said.

The Director of Australia’s National Computational Infrastructure (NCI) and co-author, of the paper, Professor Lindsay Botten, said the structures were much simpler to design and fabricate than using existing thin film light absorbers, which required either complex nanostructures, meta-materials and exotic materials or difficult-to-create combinations of metals and non-metals.

“There are major efficiency and sensitivity gains to be obtained from making photo-detectors with less material,” he said.

In our computer chips, information is transported in form of electrical charge. Electrons or other charge carriers have to be moved from one place to another. For years scientists have been working on elements that take advantage of the electrons angular momentum (their spin) rather than their electrical charge. This new approach, called “spintronics” has major advantages compared to common electronics. It can operate with much less energy.

However, it is difficult to create such a spin current, which is required in spintronics. In the journal Physical Review Letters, physicists from TU Wien (Vienna) have now proposed a new method to produce gigantic spin currents in a very small period of time. The secret is using ultra short laser pulses.

A laser pulse hits nickel (green). Spin-up-electrons (red) change into silicon (yellow). Electrons with both spin-orientations change back from silicon into nickel. Credit: TU Wien

A laser pulse hits nickel (green). Spin-up-electrons (red) change into silicon (yellow). Electrons with both spin-orientations change back from silicon into nickel. Credit: TU Wien

Magnets and semiconductors

For every electron, two different spin-states are possible; they are called “spin up” and “spin down”. The electron spin is responsible for ferromagnetism: when many electron spins in a metal are aligned, they can collectively create a magnetic field. Therefore, using ferromagnets to create spin flux seems like a straightforward idea. “There have been attempts to send an electric current through a combination of magnets and semiconductors,” says Professor Karsten Held (TU Wien). “The idea is to create a flux of electrons with uniform spin, which can then be used for spintronic circuits. But the efficiency of this method is very limited.”

Karsten Held and Marco Battiato found another way. In computer simulations, they analysed the behaviour of electrons in a thin layer of nickel when it is attached to silicon and hit with ultra short laser pulses. “Such a laser pulse has an overwhelming effect on the electrons in nickel,” says Marco Battiato. They are swept away and accelerated towards the silicon.

An electric field builds up at the interface between nickel and silicon, which stops the current. Electrons still keep on migrating between the nickel layer and silicon, but the motion in both directions cancel each other, there is no net charge transfer.

Spin up and spin down

But even when no electric charge is transported, it is still possible to transport spin. “In the nickel layer, there are both spin-up electrons as well as spin-down electrons,” says Karsten Held. “But the metal atoms influence both kinds of electrons in different ways. The spin-up electrons can move rather freely. The spin-down electrons however have a much higher probability of being scattered at the nickel atoms.”

When the electrons are scattered, they change their direction and lose energy. Therefore, the majority of the electrons which do make it all the way to the nickel-silicon interface are spin-up electrons. Electrons which move in the opposite direction have equal probabilities of being in the spin-up or spin-down state.

This spin-selective effect leads to a dominance of spin-up electrons in the silicon. This means that a spin current has been injected into the silicon without creating a charge current. “Our calculations show that this spin-polarization is extremely strong — much stronger than we could create with other methods,” says Marco Battiato. “And this spin flux can be created in femtoseconds.” Time is of the essence: today’s computer processors operate with gigahertz frequencies. Billions of operations per second are possible. Even higher frequencies in the terahertz range can only be reached with extremely fast elements.

So far, the method has only been tested in computer simulations. But Battiato and Held are already working with experimentalists who want to measure this laser-triggered spin flux. “Spintronics has the potential to become a key technology of the next few decades,” says Held. “With our spin injection method there is now finally a way to create ultrafast, extremely strong spin currents.”

North America-based manufacturers of semiconductor equipment posted $1.59 billion in orders worldwide in April 2016 (three-month average basis) and a book-to-bill ratio of 1.10, according to the April Equipment Market Data Subscription (EMDS) Book-to-Bill Report published today by SEMI.  A book-to-bill of 1.10 means that $110 worth of orders were received for every $100 of product billed for the month.

SEMI reports that the three-month average of worldwide bookings in April 2016 was $1.59 billion. The bookings figure is 15.6 percent higher than the final March 2016 level of $1.38 billion, and is 1.3 percent higher than the April 2015 order level of $1.57 billion.

The three-month average of worldwide billings in April 2016 was $1.46 billion. The billings figure is 21.5 percent higher than the final March 2016 level of $1.20 billion, and is 4.0 percent lower than the April 2015 billings level of $1.52 billion.

“Bookings reached their highest levels in eight months and billings levels also significantly improved in April,” said Denny McGuirk, president and CEO of SEMI. “The data reflect strong investments in 3D NAND and in China.”

The SEMI book-to-bill is a ratio of three-month moving averages of worldwide bookings and billings for North American-based semiconductor equipment manufacturers. Billings and bookings figures are in millions of U.S. dollars.

  Billings
(3-mo. avg)		 Bookings
(3-mo. avg)		 Book-to-Bill
November 2015 $1,288.3 $1,236.6 0.96
December 2015 $1,349.9

 

 $1,343.5 1.00
January 2016 $1,221.2 $1,310.9 1.07
February 2016 $1,204.4 $1,262.0 1.05
March 2016 (final) $1,197.6 $1,379.2 1.15
April 2016 (prelim) $1,455.0 $1,594.6 1.10

Source: SEMI (www.semi.org), May 2016

SEMI announced today that the first SEMI Strategic Materials Conference (SMC) was held in Korea COEX in Seoul on May 18. This deep technical conference program attracted 258 attendees from 81 companies. Advanced materials critical to scaling technology in semiconductor manufacturing industry bring challenges including innovation speed, cost effectiveness, performance, quality management and environmental issues.

With the theme “A Decade of Materials,” SEMI Korea organized the inaugural SMC Korea that brought the key semiconductor issues into focus and provided networking opportunities for this specialized community. The agenda included presentations on market outlook, new technology trends, challenges and opportunities of emerging new materials, chemical, quality management and collaboration by 14 speakers from Air Products, ASM Korea, Dow Chemical, Entegris, Samsung Electronics, SK Hynix, Tokyo Electron, Yole Développement and others.

The keynote at SMC Korea was presented by Kurt Ronse, director of Advanced Lithography Program of imec. He spoke on advanced lithography and patterning materials for the next decade. Ronse stated that Moore’s Law of continuing IC die area and cost reduction was becoming increasingly difficult – and advanced and strategic materials were key in enabling the physical scaling. He added that all advanced patterning techniques critically depend on increasingly stringent materials properties.

Two attorneys, Joo-Hyoung LEE and Tae-Hyun YOON from KIM & CHANG, the largest law firm in Korea, presented in the policy and regulation session. They presented an overview of K-REACH, a critical issue for chemical materials. They highlighted trends and companies’ challenges and responses in the industry in this increasingly critical area.

Hyunwoo KIM, vice president of Samsung Electronics, highlighted the importance of collaboration between customers and suppliers for the development of new materials and innovative technology. This message from one of the top global chipmakers underscored the importance of this forum working together in the area of semiconductor materials being enabling to the industry.

“We were pleased to hold the first Strategic Materials Conference, SMC Korea,” said Hyun-Dae Cho, president of SEMI Korea. “We hope the conference provided attendees with important insights into the semiconductor materials industry and also provided key networking opportunities.”

Official Sponsors of SMC Korea 2016 include Air Products, Merck, and SK Materials.

Silego Technology, the Configurable Mixed-signal Integrated Circuit (CMIC) pioneer, today announced the appointment of Mike Noonen to lead sales and business development. Mr. Noonen brings over 25 years’ experience to Silego. Most recently Noonen was the interim CEO and Board Director at Ambiq Micro. He was also the Chairman and co-founder of Silicon Catalyst, the semiconductor solution start-up incubator based in Silicon Valley. Silicon Catalyst won the 2015 EE Times/EDN “Start-up of the Year” Ace Award.

Noonen has a great deal of mixed-signal experience and success growing technology businesses. Previously he led sales, marketing and product lines at GlobalFoundries, NXP Semiconductors and National Semiconductor. He also served on the Global Semiconductor Alliance (GSA) Board of Directors. Noonen started his career as an applications engineer teaching mixed-signal IC design.

Commenting on the appointment, Mike Noonen said, “The GSA recently stated that reprogrammable chips were one of the most promising technologies to create value and drive innovation. Silego is the leader in configurable mixed-signal which makes them one of most exciting companies in all of semiconductors. I am thrilled to join the Silego team.”

“Mike is a tremendous addition to the Silego team. He will lead the next phase of our growth and promote the widespread adoption of the Silego CMIC platform as the industry choice for mixed-signal design,” Silego Chairman and CEO Ilbok Lee said.

“Mike’s proven ability to scale IC companies coupled with his strong background in mixed-signal and power management, makes him the ideal addition to the Silego executive team. He brings experienced sales leadership, vast strategic value and we’re thrilled to have him on board,” said Silego President John Teegen.

Mr. Noonen holds a B.S. in Electrical Engineering from Colorado State University and was named the College of Engineering Distinguished Alumni in 2012. He holds multiple patents in the areas of Internet telephony and video communications.

Silego Technology is a fabless semiconductor company creating Configurable Mixed-signal Integrated Circuits, or CMICs, which enable a paradigm shift in the way that hardware engineers design their systems.

GLOBALFOUNDRIES today announced a next-generation radio-frequency (RF) silicon solution for its Silicon Germanium (SiGe) high-performance technology portfolio. The technology is optimized for customers who need improved performance solutions for automotive radar, satellite communications, 5G millimeter-wave base stations and other wireless and wireline communication network applications.

GLOBALFOUNDRIES’ SiGe 8XP technology is the latest extension to the company’s 130nm high-performance SiGe family and enables customers to develop RF solutions that deliver even faster data throughput, over greater distances, while consuming less power. The advanced technology offers an improved heterojunction bipolar transistor (HBT) performance with lower noise figure, higher signal integrity, and up to a 25 percent increase in maximum oscillation frequency (fMAX) to 340GHz compared to its predecessor, SiGe 8HP.

The complexity and performance demands of high bandwidth communication systems operating in the mmWave frequency bands have created the need for higher performance silicon solutions. This creates opportunities for high-performance SiGe solutions in the RF front end of 5G smartphones and other mmWave phased array consumer applications in addition to the current applications that depend on SiGe for high performance, such as the communications infrastructure base stations, backhaul, satellite and fiber optic networks.

“5G networks promise to bring a new level of innovation to RF SOC design to support high bandwidth data delivery and meet the demands for increased data rates and low latency applications,” said Dr. Bami Bastani, senior vice president of GLOBALFOUNDRIES RF business unit. “GLOBALFOUNDRIES’ SiGe 8HP and 8XP technologies offer an outstanding balance of performance, power, and efficiency that enable customers to develop differentiated RF solutions in next-generation mobile and infrastructure hardware.”

“GLOBALFOUNDRIES’ SiGe technology leadership and comprehensive PDKs enable our designers to develop performance-optimized, differentiated millimeter wave solutions quickly,” said Robert Donahue, Anokiwave CEO. “Utilizing SiGe 8XP allows us to take performance to even higher levels in future-ready mmWave solutions designed to help providers stay ahead of the demands for reliable connectivity, from anywhere, while handling exploding volumes of mobile data traffic.”

With tomorrow’s 5G deployments poised to drive a proliferation of base stations with smaller cell areas, SiGe 8HP and 8XP are designed to help offer a balance of value, power output, efficiency, low noise, and linearity at microwave and millimeter-wave frequencies for differentiated RF solutions in next-generation mobile infrastructure hardware and smartphone RF front ends. GLOBALFOUNDRIES’ SiGe 8HP and 8XP high-performance offerings enable chip designers to integrate significant digital and RF functionality while exploiting a more economical silicon technology base compared to gallium arsenide (GaAs) and higher performance than CMOS.

In addition to high performance transistors for efficient operation at mmWave frequencies, SiGe8HP and 8XP introduce technology innovations that can reduce the die size and enable area-efficient solutions. A new Cu metallization feature provides improved current carrying capabilities with five times the current density at a 100C, or up to 25 degrees C higher operating temperature at the same current density compared to standard Cu lines. In addition, GLOBALFOUNDRIES’ through-silicon-via (TSV) interconnect technology is available.

For the first time, scientists at IBM Research have demonstrated reliably storing 3 bits of data per cell using a relatively new memory technology known as phase-change memory (PCM).

The current memory landscape spans from venerable DRAM to hard disk drives to ubiquitous flash. But in the last several years PCM has attracted the industry’s attention as a potential universal memory technology based on its combination of read/write speed, endurance, non-volatility and density. For example, PCM doesn’t lose data when powered off, unlike DRAM, and the technology can endure at least 10 million write cycles, compared to an average flash USB stick, which tops out at 3,000 write cycles.

This research breakthrough provides fast and easy storage to capture the exponential growth of data from mobile devices and the Internet of Things.

For the first time, scientists at IBM Research have demonstrated reliably storing 3 bits of data per cell using a relatively new memory technology known as phase-change memory (PCM). This research breakthrough provides fast and easy storage to capture the exponential growth of data from mobile devices and the Internet of Things. In this photo, IBM scientist , Nikolaos Papandreou holds the PCM chip under a magnifying lens in his lab. (Credit: IBM Research)

For the first time, scientists at IBM Research have demonstrated reliably storing 3 bits of data per cell using a relatively new memory technology known as phase-change memory (PCM). This research breakthrough provides fast and easy storage to capture the exponential growth of data from mobile devices and the Internet of Things. In this photo, IBM scientist , Nikolaos Papandreou holds the PCM chip under a magnifying lens in his lab. (Credit: IBM Research)

Applications 

IBM scientists envision standalone PCM as well as hybrid applications, which combine PCM and flash storage together, with PCM as an extremely fast cache. For example, a mobile phone’s operating system could be stored in PCM, enabling the phone to launch in a few seconds. In the enterprise space, entire databases could be stored in PCM for blazing fast query processing for time-critical online applications, such as financial transactions.

Machine learning algorithms using large datasets will also see a speed boost by reducing the latency overhead when reading the data between iterations.

How PCM Works 

PCM materials exhibit two stable states, the amorphous (without a clearly defined structure) and crystalline (with structure) phases, of low and high electrical conductivity, respectively.

For the first time, scientists at IBM Research have demonstrated reliably storing 3 bits of data per cell using a relatively new memory technology known as phase-change memory (PCM). In this photo, the experimental multi-bit PCM chip used by IBM scientists is connected to a standard integrated circuit board. The chip consists of a 2 × 2 Mcell array with a 4- bank interleaved architecture. The memory array size is 2 × 1000 μm × 800 μm. The PCM cells are based on doped-chalcogenide alloy and were integrated into the prototype chip serving as a characterization vehicle in 90nm CMOS baseline technology. (Credit: IBM Research)

For the first time, scientists at IBM Research have demonstrated reliably storing 3 bits of data per cell using a relatively new memory technology known as phase-change memory (PCM). In this photo, the experimental multi-bit PCM chip used by IBM scientists is connected to a standard integrated circuit board. The chip consists of a 2 × 2 Mcell array with a 4- bank interleaved architecture. The memory array size is 2 × 1000 μm × 800 μm. The PCM cells are based on doped-chalcogenide alloy and were integrated into the prototype chip serving as a characterization vehicle in 90nm CMOS baseline technology. (Credit: IBM Research)

To store a ‘0’ or a ‘1’, known as bits, on a PCM cell, a high or medium electrical current is applied to the material. A ‘0’ can be programmed to be written in the amorphous phase or a ‘1’ in the crystalline phase, or vice versa. Then to read the bit back, a low voltage is applied. This is how re-writable Blue-ray Discs* store videos.

Previously scientists at IBM and other institutes have successfully demonstrated the ability to store 1 bit per cell in PCM, but today at the IEEE International Memory Workshop in Paris, IBM scientists are presenting, for the first time, successfully storing 3 bits per cell in a 64k-cell array at elevated temperatures and after 1 million endurance cycles.

“Phase change memory is the first instantiation of a universal memory with properties of both DRAM and flash, thus answering one of the grand challenges of our industry,” said Dr. Haris Pozidis, an author of the paper and the manager of non-volatile memory research at IBM Research – Zurich. “Reaching 3 bits per cell is a significant milestone because at this density the cost of PCM will be significantly less than DRAM and closer to flash.”

To achieve multi-bit storage IBM scientists have developed two innovative enabling technologies: a set of drift-immune cell-state metrics and drift-tolerant coding and detection schemes.

More specifically, the new cell-state metrics measure a physical property of the PCM cell that remains stable over time, and are thus insensitive to drift, which affects the stability of the cell’s electrical conductivity with time. To provide additional robustness of the stored data in a cell over ambient temperature fluctuations a novel coding and detection scheme is employed. This scheme adaptively modifies the level thresholds that are used to detect the cell’s stored data so that they follow variations due to temperature change. As a result, the cell state can be read reliably over long time periods after the memory is programmed, thus offering non-volatility.

“Combined these advancements address the key challenges of multi-bit PCM, including drift, variability, temperature sensitivity and endurance cycling,” said Dr. Evangelos Eleftheriou, IBM Fellow.

The experimental multi-bit PCM chip used by IBM scientists is connected to a standard integrated circuit board. The chip consists of a 2 × 2 Mcell array with a 4- bank interleaved architecture. The memory array size is 2 × 1000 μm × 800 μm. The PCM cells are based on doped-chalcogenide alloy and were integrated into the prototype chip serving as a characterization vehicle in 90 nm CMOS baseline technology.

OpenPOWER 

At the 2016 OpenPOWER Summit in San Jose, CA, last month, IBM scientists demonstrated, for the first time, phase-change memory attached to POWER8-based servers (made by IBM and TYAN® Computer Corp.) via the CAPI (Coherent Accelerator Processor Interface) protocol. This technology leverages the low latency and small access granularity of PCM, the efficiency of the OpenPOWER architecture and the CAPI protocol. In the demonstration the scientists measured very low and consistent latency for 128-byte read/writes between the PCM chips and the POWER8 processor.

For more information on today’s announcement watch this video: https://youtu.be/q3dIw3uAyE8. Continue the conversation at @IBMResearch #3bitPCM.

At the Quantum Europe conference, taking place in Amsterdam, Belgian’s nanoelectronincs research center imec announced today that it is ramping-up its R&D activities focused on quantum computing. Imec will implement qubits and supporting nanoelectronic functionality for quantum computing,leveraging its advanced silicon (Si) platform that was established within the framework of its industrial affiliation program with additional support from the EU through e.g. ECSEL projects SENATE and TAKE-5.

Widely seen as a possible solution to complex computing problems which are intractable on classical computers, quantum computing uses quantum physics to create and manipulate quantum states within electronic devices (qubits) to enhance the performance over that of existing, ‘classical’ approaches. Of the many device proposals for qubit implementation, the ones compatible with existing Si technology will provide the most viable solution for interfacing with the outside world.

The goal of imec’s initiative is to establish a bridge between the most advanced transistor technology and emerging quantum technology options, representing a natural extension of imec’s Si platform. This will ensure routes to demonstrate the quantum computing functionality compatible with industries’ platform technologies. Assuming a key position in the quantum technologies ecosystem, imec will support the transition of new quantum technologies, from the physics lab to technology feed into the supply chain. Imec’s platform will help translate laboratory demonstrators into commercial products. It will be open for universities, SMEs and industrial partners of imec’s quantum technologies programs.

“The coming decades will be characterized by a wave of quantum technology based applications, ranging from communication, simulation and sensing, to computation. However, to enable this, the industry will need technical support to adopt and to integrate these new technologies into products and services,” stated Jo De Boeck, CTO at imec. “Imec’s industry relevant Si platform for the advanced technology nodes, is currently used to screen technology options for the 5nm nodes and beyond. The same platform is hence the ideal basis to start implementing quantum devices as quantum effects are becoming the starting point of developing a quantum platform.”

By Jonathan Davis, global VP, Industry Advocacy, SEMI

The 27th annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2016), opened today (May 17) in Saratoga Springs, New York.  A record-setting 340-plus conference attendees joined this year’s event which focuses on key issues and trends in the manufacture of semiconductors.

Don O’Toole, IBM

Opening keynoter Don O’Toole of IBM’s Watson IoT Alliances & Ecosystem Business Development group highlighted the economic implications of the emerging Internet of Things and discussed how cognitive IoT is driving new business models.  He pointed to significant macroeconomic impacts as well as disruption and necessary change at the micro/strategic level within all enterprises.

In his talk on the “Economics of Things” he said that high-tech firms are challenged to continuously transform their business models and partner ecosystems to keep pace with the quickly evolving nature of business technology. Across industries, companies are turning their focus from traditional business equipment to a new generation of devices that will transform not just the electronics industry but many others.

O’Toole said that companies are moving beyond merely selling connected, intelligent products and services to using cognitive IoT to deliver greatly enhanced customer experiences over the life of their products. He described fundamental change or “liquidification” in the markets for physical goods.

Just as the internet created liquid markets with the digitization of music, news, maps, weather and traffic, the Internet of Things will eliminate physical constraints, structure information and create liquid markets in real estate, manufacturing, agriculture, retail and transportation. A radical repricing of credit and risk will improve financing and reduce “moral hazard,” which, in economic terms, is an information asymmetry that influences risk-taking to leverage lack of transparency.

The primary vectors of IoT to produce both opportunity and disruption will be the creation of new asset marketplaces, improved risk management and greater efficiency.  Fuller visibility and predictability will change market analysis and decision making with significant economic impact.  This characteristic will be apparent in widely varied industries including two that O’Toole profiled as examples: agriculture and real estate.

U.S. commercial real estate is a highly inefficient market in which lack of information transparency and predictability constrains utilization.  O’Toole said there is 12 billion square feet of commercial office space, however, only 67 percent is utilized.  IoT solutions that include sensor technology and user analytics potentially shift profit pools (as some actors benefit from the lack of information transparency), but can produce a $128 billion net economic benefit due to price efficiency and the elimination of shadow markets.

Similarly, agriculture faces high degrees of variability.  Despite significant scientific advancements, crop yields can fluctuate 39% between years, lending the moniker of “legalized gambling” to the farming industry. Employing IoT technologies that leverage sensors, monitoring, drones, cloud-based information systems and data analytics will reduce uncertainties, improve decision making and lead to better deployment of capital assets.  O’Toole estimates that this will produce a 6% decline in farm prices and raise GPD 2%. He cited California wine-maker E.J. Gallo’s ability to decrease water use by 20% as an example of the beneficial impact of cognitive IoT technologies.

While the economic benefits will accrue to multiple industries, high tech and electronics are to be among the greatest beneficiaries of the application of cognitive IoT functions in manufacturing. New ecosystems of customers and partners will develop.  Design and development will necessisarily change to be more agile, with faster prototyping and shorter product lifecycles.  O’Toole sees new value creation with machine-learned cognitive capabilities and natural language interfaces.

O’Toole expects to see far more information sharing between industries. He said that the permutations of ecosystems and industries that devices have to support are making interoperability the biggest challenge in the Internet of Things.

To win in the cognitive IoT era, O’Toole says companies must focus on experience. He offered the following advice:

·         Move from discrete, fixed engineering to continuous engineering

·         Future-proof designs with software-driven feature updates

·         Consider higher value business models that can shift capital expenses to operating expenses

·         Lead product development teams to use design thinking to better understand end-user personas

·         Build stronger relationships with end users by applying cognitive learning technologies to improve product services and experiences.

Other ASMC opening day sessions include contamination free manufacturing, advanced metrology, defect inspection, factory optimization, as well as 37 poster sessions on critical technological topics from representatives from global IC makers, equipment companies and materials providers.