Category Archives: Device Architecture

SEMI today announced the re-election of 10 current members to the SEMI International Board of Directors in accordance with the association’s by-laws.

The 10 board members were re-elected for two-year terms:

  • Martin Anstice, CEO, Lam Research Corporation
  • Kevin Crofton, president, SPTS Technologies, and corp. V.P., Orbotech
  • Jon D. Kemp, vice president, DuPont
  • Mitsunobu Koshiba, president and representative director, JSR Corporation
  • Yong Han Lee, chairman, Wonik
  • Sue Lin, vice chairman, Hermes Epitek
  • Tadahiro Suhara, president, SCREEN Semiconductor Solutions Co., Ltd.
  • Tetsuo Tsuneishi, executive chairman of the board and representative director, TEL
  • Tien Wu, management director and chief operating officer, ASE Group
  • Guoming Zhang, senior V.P. and chief strategy officer, NAURA Technology Group Co., Ltd.

The SEMI Executive Committee confirmed Tetsuo Tsuneishi, chairman of the board of TEL, as chairman of the SEMI Executive Committee. SEMI also confirmed Bertrand Loy, president and CEO of Entegris, as vice-chairman.

The leadership appointments and the elected board members’ tenure become effective at the annual SEMI membership meeting on July 11, during SEMICON West 2018 in San Francisco, California.

“The SEMI Board of Directors is comprised of global business leaders who represent SEMI members and the industry, ensuring that SEMI develops and delivers member value in all regions,” said SEMI president and CEO Ajit Manocha. “We congratulate the re-elected members and greatly appreciate all of our board members’ contributions to the industry.”

SEMI’s 19 voting directors and 11 emeritus directors represent companies from Europe, China, Japan, Korea, North America, and Taiwan, reflecting the global scope of the association’s activities. SEMI directors are elected by the general membership as voting members of the board and can serve a total of five two-year terms.

Market shares of semiconductor equipment manufacturers shifted significantly in Q1 2018 as Applied Materials, the top supplier dropped, according to the report “Global Semiconductor Equipment: Markets, Market Shares, Market Forecasts,” recently published by The Information Network, a New Tripoli-based market research company.

The chart below shows shares for the first quarter (Q1) of calendar year 2017 and 2018. Market shares are for equipment only, excluding service and spare parts, and have been converted for revenues of foreign companies to U.S. dollars on a quarterly exchange rate.

Applied Materials lost significant market share YoY, from 18.4% of the $13.1 billion Q1 2017 market to 17.7% of the $17.0 billion Q1 2018 market. This drop follows a 1.8 share-point loss by Applied Materials for CY 2017 compared to 2016. The company competes with Lam Research and TEL in the deposition and etch market, and both gained share at the expense of Applied Materials.

At the other end of the spectrum, smaller semiconductor companies making up the “other” category lost 2.4 share points as a whole.

Much of the equipment revenue growth was attributed to strong growth in the DRAM and NAND sectors, as equipment was installed in memory manufacturers Intel, Micron Technology, Samsung Electronics, SK Hynix, Toshiba, and Western Digital. The memory sector, which grew grown 61.5% in 2017, is forecast to add another 28.5% in 2018 according to industry consortium WSTS (World Semiconductor Trade Statistics).

TEL recorded growth of 120.3% YoY in Korea, much of it on NAND and DRAM sales to Samsung Electronics and SK Hynix, and 69.5% YoY in Japan, much of it on NAND sales to Toshiba at its Fab 6 in Kitakami, Japan. Lam Research gained 42.2% and 70.5% YoY, respectively, in Korea and Japan.

Following the strong growth in the semiconductor equipment market, The Information Network projects another 11.5% growth in 2018 for semiconductor equipment.

Directly converting electrical power to heat is easy. It regularly happens in your toaster, that is, if you make toast regularly. The opposite, converting heat into electrical power, isn’t so easy.

Researchers from Sandia National Laboratories have developed a tiny silicon-based device that can harness what was previously called waste heat and turn it into DC power. Their advance was recently published in Physical Review Applied.

This tiny silicon-based device developed at Sandia National Laboratories can catch and convert waste heat into electrical power. The rectenna, short for rectifying antenna, is made of common aluminum, silicon and silicon dioxide using standard processes from the integrated circuit industry. Credit: Photo by Randy Montoya/Sandia National Laboratories

“We have developed a new method for essentially recovering energy from waste heat. Car engines produce a lot of heat and that heat is just waste, right? So imagine if you could convert that engine heat into electrical power for a hybrid car. This is the first step in that direction, but much more work needs to be done,” said Paul Davids, a physicist and the principal investigator for the study.

“In the short term we’re looking to make a compact infrared power supply, perhaps to replace radioisotope thermoelectric generators.” Called RTGs, the generators are used for such tasks as powering sensors for space missions that don’t get enough direct sunlight to power solar panels.

Davids’ device is made of common and abundant materials, such as aluminum, silicon and silicon dioxide — or glass — combined in very uncommon ways.

Silicon device catches, channels and converts heat into power

Smaller than a pinkie nail, the device is about 1/8 inch by 1/8 inch, half as thick as a dime and metallically shiny. The top is aluminum that is etched with stripes roughly 20 times smaller than the width of a human hair. This pattern, though far too small to be seen by eye, serves as an antenna to catch the infrared radiation.

Between the aluminum top and the silicon bottom is a very thin layer of silicon dioxide. This layer is about 20 silicon atoms thick, or 16,000 times thinner than a human hair. The patterned and etched aluminum antenna channels the infrared radiation into this thin layer.

The infrared radiation trapped in the silicon dioxide creates very fast electrical oscillations, about 50 trillion times a second. This pushes electrons back and forth between the aluminum and the silicon in an asymmetric manner. This process, called rectification, generates net DC electrical current.

The team calls its device an infrared rectenna, a portmanteau of rectifying antenna. It is a solid-state device with no moving parts to jam, bend or break, and doesn’t have to directly touch the heat source, which can cause thermal stress.

Infrared rectenna production uses common, scalable processes

Because the team makes the infrared rectenna with the same processes used by the integrated circuit industry, it’s readily scalable, said Joshua Shank, electrical engineer and the paper’s first author, who tested the devices and modeled the underlying physics while he was a Sandia postdoctoral fellow.

He added, “We’ve deliberately focused on common materials and processes that are scalable. In theory, any commercial integrated circuit fabrication facility could make these rectennas.”

That isn’t to say creating the current device was easy. Rob Jarecki, the fabrication engineer who led process development, said, “There’s immense complexity under the hood and the devices require all kinds of processing tricks to build them.”

One of the biggest fabrication challenges was inserting small amounts of other elements into the silicon, or doping it, so that it would reflect infrared light like a metal, said Jarecki. “Typically you don’t dope silicon to death, you don’t try to turn it into a metal, because you have metals for that. In this case we needed it doped as much as possible without wrecking the material.”

The devices were made at Sandia’s Microsystems Engineering, Science and Applications Complex. The team has been issued a patent for the infrared rectenna and have filed several additional patents.

The version of the infrared rectenna the team reported in Physical Review Applied produces 8 nanowatts of power per square centimeter from a specialized heat lamp at 840 degrees. For context, a typical solar-powered calculator uses about 5 microwatts, so they would need a sheet of infrared rectennas slightly larger than a standard piece of paper to power a calculator. So, the team has many ideas for future improvements to make the infrared rectenna more efficient.

Future work to improve infrared rectenna efficiency

These ideas include making the rectenna’s top pattern 2D x’s instead of 1D stripes, in order to absorb infrared light over all polarizations; redesigning the rectifying layer to be a full-wave rectifier instead of the current half-wave rectifier; and making the infrared rectenna on a thinner silicon wafer to minimize power loss due to resistance.

Through improved design and greater conversion efficiency, the power output per unit area will increase. Davids thinks that within five years, the infrared rectenna may be a good alternative to RTGs for compact power supplies.

Shank said, “We need to continue to improve in order to be comparable to RTGs, but the rectennas will be useful for any application where you need something to work reliably for a long time and where you can’t go in and just change the battery. However, we’re not going to be an alternative for solar panels as a source of grid-scale power, at least not in the near term.”

Davids added, “We’ve been whittling away at the problem and now we’re beginning to get to the point where we’re seeing relatively large gains in power conversion, and I think that there’s a path forward as an alternative to thermoelectrics. It feels good to get to this point. It would be great if we could scale it up and change the world.”

Smart technologies take center stage tomorrow as SEMICON West, the flagship U.S. event for connecting the electronics manufacturing supply chain, opens for three days of insights into leading technologies and applications that will power future industry expansion. Building on this year’s record-breaking industry growth, SEMICON West – July 10-12, 2018, at the Moscone Center in San Francisco – spotlights how cognitive learning technologies and other disruptors will transform industries and lives.

Themed BEYOND SMART and presented by SEMI, SEMICON West 2018 features top technologists and industry leaders highlighting the significance of artificial intelligence (AI) and the latest technologies and trends in smart transportation, smart manufacturing, smart medtech, smart data, big data, blockchain and the Internet of Things (IoT).

Seven keynotes and more than 250 subject matter experts will offer insights into critical opportunities and issues across the global microelectronics supply chain. The event also features new Smart Pavilions to showcase interactive technologies for immersive, virtual experiences.

Smart transportation and smart manufacturing pavilions: Applying AI to accelerate capabilities

Automotive leads all new applications in semiconductor growth and is a major demand driver for technologies inrelated segments such as MEMS and sensors. The SEMICON West Smart Transportation and Smart Manufacturing pavilions showcase AI breakthroughs that are enabling more intelligent transportation performance and manufacturing processes, increasing yields and profits, and spurring innovation across the industry.

Smart workforce pavilion: Connecting next-generation talent with the microelectronics industry

SEMICON West also tackles the vital industry issue of how to attract new talent with the skills to deliver future innovations. Reliant on a highly skilled workforce, the industry today faces thousands of job openings, fierce competition for workers and the need to strengthen its talent pipeline. Educational and engaging, the Smart Workforce Pavilion connects the microelectronics industry with college students and entry-level professionals.

In the Workforce Pavilion “Meet the Experts” Theater, recruiters from top companies are available for on-the-spot interviews, while career coaches offer mentoring, tips on cover letter and resume writing, job-search guidance, and more. SEMI will also host High Tech U (HTU) in conjunction with the SEMICON West Smart Workforce Pavilion. The highly interactive program supported by Advantest, Edwards, KLA-Tencor and TEL exposes high school students to STEM education pathways and useful insights about careers in the industry.

The Semiconductor Industry Association (SIA), representing U.S. leadership in semiconductor manufacturing, design, and research, today announced worldwide sales of semiconductors reached $38.7 billion for the month of May 2018, an increase of 21.0 percent compared to the May 2017 total of $32.0 billion. Global sales in May were 3 percent higher than the April 2018 total of $37.6 billion. All monthly sales numbers are compiled by the World Semiconductor Trade Statistics (WSTS) organization and represent a three-month moving average.

“The global semiconductor market has posted consistent growth of greater than 20 percent for 14 consecutive months, and May 2018 marked the industry’s highest-ever monthly sales,” said John Neuffer, president and CEO, Semiconductor Industry Association. “The Americas led the way once again, with sales increasing by more than 30 percent compared to last year, and sales were up across all major semiconductor product categories on both a year-to-year and month-to-month basis.”

Year-to-year sales increased solidly across all regions: the Americas (31.6 percent), China (28.5 percent), Europe (18.7 percent), Japan (14.7 percent), and Asia Pacific/All Other (8.7 percent). Month-to-month sales increased more modestly across all regions: China (6.3 percent), Japan (2.6 percent), Asia Pacific/All Other (1.2 percent), the Americas (1.1 percent), and Europe (1.0 percent).

SEMICON West next week will host a White House-led discussion of the anticipated national leadership strategy for semiconductors, a multi-agency initiative led by top U.S. government national security and economic organizations.

On Wednesday, July 11, a panel of U.S. officials representing agencies involved in leading the strategy will address federal research and development (R&D), investment and acquisition priorities aimed at ensuring the U.S. remains the global leader in the semiconductor industry.

As global economic trends and technologies such as artificial intelligence evolve, and foreign governments increasingly lure microelectronics manufacturing investments overseas, the U.S. strategy for manufacturing advanced semiconductors and driving research and development (R&D) in technology innovation has become an economic priority.

The White House selected SEMICON West, organized by SEMI, as the site for the discussion and this urgent call to action because of the event’s central role in bringing together critical industries across the global electronics supply chain. The multi-agency panel will outline activities and new policies under development to ensure U.S. strategic leadership in microelectronics, including focused investment in innovations key to the next generation of devices for commercial and government use. The initiative also includes public-private partnerships to accelerate the capabilities of advanced semiconductors for critical applications such as artificial intelligence (AI), cyber, secure communications, the internet of things (IoT) and big data analytics.

PANEL:
National Strategy for Semiconductor and Microelectronic Innovation
TIME AND DATE:
10:30 to 11:30 a.m., Wednesday, July 11
LOCATION:
Yerba Buena Theater, 700 Howard St., San Francisco
MODERATOR:
Dr. Lloyd Whitman, Principal Assistant Director, Physical Sciences and Engineering, White House Office of Science and Technology Policy
PANELISTS:
Dr. Sankar Basu, Program Director, Computer and Information Science and Engineering, National Science Foundation
Dr. Eric W. Forsythe, Flexible Electronics Team Leader, U.S. Army Research Laboratory
Dr. Jeremy Muldavin, Deputy Director of Defense Software & Microelectronics Activities, Office of the Deputy Assistant Secretary of Defense for Systems Engineering
Dr. Robinson Pino, Acting Research Division Director, Advanced Scientific Computing Research, Office of Science, Department of Energy

 

SEMICON West is organized by SEMI Americas to connect more than 2,000 member companies and 1.3 million professionals worldwide to advance the technology and business of electronics manufacturing. SEMICON West is celebrating its 47th year as the flagship event for the semiconductor industry. Find more at www.semiconwest.org.

By integrating the design of antenna and electronics, researchers have boosted the energy and spectrum efficiency for a new class of millimeter wave transmitters, allowing improved modulation and reduced generation of waste heat. The result could be longer talk time and higher data rates in millimeter wave wireless communication devices for future 5G applications.

The new co-design technique allows simultaneous optimization of the millimeter wave antennas and electronics. The hybrid devices use conventional materials and integrated circuit (IC) technology, meaning no changes would be required to manufacture and package them. The co-design scheme allows fabrication of multiple transmitters and receivers on the same IC chip or the same package, potentially enabling multiple-input-multiple-output (MIMO) systems as well as boosting data rates and link diversity.

Researchers from the Georgia Institute of Technology presented their proof-of-concept antenna-based outphasing transmitter on June 11 at the 2018 Radio Frequency Integrated Circuits Symposium (RFIC) in Philadelphia. Their other antenna-electronics co-design work was published at the 2017 and 2018 IEEE International Solid-State Circuits Conference (ISSCC) and multiple peer-reviewed IEEE journals. The Intel Corporation and U.S. Army Research Office sponsored the research.

Georgia Tech researchers are shown with electronics equipment and antenna setup used to measure far-field radiated output signal from millimeter wave transmitters. Shown are Graduate Research Assistant Huy Thong Nguyen, Graduate Research Assistant Sensen Li, and Assistant Professor Hua Wang. (Credit: Allison Carter, Georgia Tech)

“In this proof-of-example, our electronics and antenna were designed so that they can work together to achieve a unique on-antenna outphasing active load modulation capability that significantly enhances the efficiency of the entire transmitter,” said Hua Wang, an assistant professor in Georgia Tech’s School of Electrical and Computer Engineering. “This system could replace many types of transmitters in wireless mobile devices, base stations and infrastructure links in data centers.”

Key to the new design is maintaining a high-energy efficiency regardless whether the device is operating at its peak or average output power. The efficiency of most conventional transmitters is high only at the peak power but drops substantially at low power levels, resulting in low efficiency when amplifying complex spectrally efficient modulations. Moreover, conventional transmitters often add the outputs from multiple electronics using lossy power combiner circuits, exacerbating the efficiency degradation.

“We are combining the output power though a dual-feed loop antenna, and by doing so with our innovation in the antenna and electronics, we can substantially improve the energy efficiency,” said Wang, who is the Demetrius T. Paris Professor in the School of Electrical and Computer Engineering.  “The innovation in this particular design is to merge the antenna and electronics to achieve the so-called outphasing operation that dynamically modulates and optimizes the output voltages and currents of power transistors, so that the millimeter wave transmitter maintains a high energy efficiency both at the peak and average power.”

Beyond energy efficiency, the co-design also facilitates spectrum efficiency by allowing more complex modulation protocols. That will enable transmission of a higher data rate within the fixed spectrum allocation that poses a significant challenge for 5G systems.

“Within the same channel bandwidth, the proposed transmitter can transmit six to ten times higher data rate,” Wang said. “Integrating the antenna gives us more degrees of freedom to explore design innovation, something that could not be done before.”

Sensen Li, a Georgia Tech graduate research assistant who received the Best Student Paper Award at the 2018 RFIC symposium, said the innovation resulted from bringing together two disciplines that have traditionally worked separately.

“We are merging the technologies of electronics and antennas, bringing these two disciplines together to break through limits,” he said. “These improvements could not be achieved by working on them independently. By taking advantage of this new co-design concept, we can further improve the performance of future wireless transmitters.”

The new designs have been implemented in 45-nanometer CMOS SOI IC devices and flip-chip packaged on high-frequency laminate boards, where testing has confirmed a minimum two-fold increase in energy efficiency, Wang said.

The antenna electronics co-design is enabled by exploring the unique nature of multi-feed antennas.

“An antenna structure with multiple feeds allows us to use multiple electronics to drive the antenna concurrently. Different from conventional single-feed antennas, multi-feed antennas can serve not only as radiating elements, but they can also function as signal processing units that interface among multiple electronic circuits,” Wang explained. “This opens a completely new design paradigm to have different electronic circuits driving the antenna collectively with different but optimized signal conditions, achieving unprecedented energy efficiency, spectral efficiency and reconfigurability.”

The cross-disciplinary co-design could also facilitate fabrication and operation of multiple transmitters and receivers on the same chip, allowing hundreds or even thousands of elements to work together as a whole system. “In massive MIMO systems, we need to have a lot of transmitters and receivers, so energy efficiency will become even more important,” Wang noted.

Having large numbers of elements working together becomes more practical at millimeter wave frequencies because the wavelength reduction means elements can be placed closer together to achieve compact systems, he pointed out. These factors could pave the way for new types of beamforming that are essential in future millimeter wave 5G systems.

Power demands could drive adoption of the technology for battery-powered devices, but Wang says the technology could also be useful for grid-powered systems such as base stations or wireless connections to replace cables in large data centers. In those applications, expanding data rates and reducing cooling needs could make the new devices attractive.

“Higher energy efficiency also means less energy will be converted to heat that must be removed to satisfy the thermal management,” he said. “In large data centers, even a small reduction in thermal load per device can add up. We hope to simplify the thermal requirements of these electronic devices.”

In addition to those already mentioned, the research team included Taiyun Chi, Huy Thong Nguyen and Tzu-Yuan Huang, all from Georgia Tech.

The SiC power market is now on the road, asserts Yole Développement (Yole). Therefore, since 2017, the market research and strategy consulting company identified more than 20 strategic announcements, showing the dynamism of this market and attractiveness of the technology. Rohm, Bombardier, Cree, SDK, STMicroelectronics, Infineon Technologies, Littelfuse, Ascatron and more are part of the powerful ecosystem, presenting innovative products and revealing key partnerships and/or M&A .

Today, SiC transistors are clearly being adopted, penetrating smoothly into different applications. Yole’s analysts forecast a US$1.4 billion SiC power semiconductor market by 2023. According to the Power & Wireless team at Yole, this market is showing a 29% CAGR between 2017 and 2023.
Power SiC report, 2018 edition presents Yole’s deep understanding of SiC penetration in different applications including xEV, xEV charging infrastructure, PFC/power supply, PV, UPS, motor drives, wind and rail. In addition, it highlights the state-of-the-art SiC-based devices, modules, and power stacks. Yole’s analysts also describe the SiC power industrial landscape from materials to systems, and analyze of SiC power market dynamics. This report proposes a detailed quantification of the SiC power device market until 2023, in value and volume.

SiC adoption is accelerating: is the supply chain ready? Yole’s analysts reveal today their vision of the SiC industry.

SiC market is still being driven by diodes used in PFC and PV applications. However Yole expects that in five years from now the main SiC device market driver will be transistors, with an impressive 50% CAGR for 2017-2023.

This adoption is partially thanks to the improvement of the transistor performance and reliability compared to the first generation of products, which gives confidence to customers for implementation.

Another key trend revealed by Yole’s analysts is the SiC adoption by automotive players, over the next 5-10 years. “Its implementation rate differs depending on where SiC is being used,” comments Dr. Hong Lin, Technology and Market Analyst, Compound Semiconductors at Yole. “That could be in the main inverter, in OBC or in the DC/DC converter. By 2018, more than 20 automotive companies are already using SiC SBDs or SiC MOSFET transistors for OBC, which will lead to 44% CAGR through to 2023.”

Yole expects SiC adoption in the main inverter by some pioneers, with an inspiring 108% market CAGR for 2017-2023. This will be possible because nearly all carmakers have projects to implement SiC in the main inverter in coming years. In particular, Chinese automotive players are strongly considering the adoption of SiC.

The recent SiC module developed by STMicroelectronics for Tesla and its Model 3 is a good example of this early adoption. The SiC-based inverter, analyzed by System Plus Consulting, Yole’s sister company is composed of 24 1-in-1 power modules. Each module contains two SiC MOSFETs with an innovative die attach solution and connected directly on the terminals with copper clips and thermally dissipated by copper baseplates. The thermal dissipation of the modules is performed thanks to a specifically designed pin-fin heatsink.

“SiC MOSFET is manufactured with the latest STMicroelectronics technology design,” explains Dr. Elena Barbarini, Head of Department Devices at System Plus Consulting. “This technical choice allows reduction of conduction losses and switching losses”. STMicroelectronics is strongly involved in the development of SiC-based modules for the automotive industry. During its recent Capital Markets Day, the leading player details its activities in this field (Source: Automotive & Discrete Group presentation – May 2018). STMicroelectronics is also commited in the development of innovative packaging solutions. . System Plus Consulting proposes today a complete teardown analysis including a detailed estimation of the production cost of the module and its package.

PV has also caught the attention of Yole’s analysts during recent months. China claimed almost the half of the world’s installations in the last year. However due to new governmental regulations, Yole sees a slow down of the PV market in short term and has lowered its expectation of SiC penetration for the segment.

In general, system manufacturers are interested in implementing cost effective systems which are reliable, without any technology choice, either silicon or SiC. “Today, even if it’s certified that SiC performs better than silicon, system manufacturers still get questions about long term reliability and the total cost of the SiC inverter”, comments Ana Villamor, Technology & Market Analyst, Power Electronics & Compound Semiconductors at Yole.

Yole and System Plus Consulting teams will attend SEMICON Europa 2018 (Munich, Germany – November 13-16). During the leading trade show, Dr. Milan Rosina, Senior Technology & Market Analyst, Power Electronics & Batteries at Yole proposes a dedicated WBG presentation on November 15 at 2:30 PM.

SiC and GaN devices have demonstrated their large potential for power electronic applications. During the presentation “GaN and SiC power device: market overview” taken place during the Power Electronics Session, Dr. Rosina proposes an overview of the market, technology and the industrial supply chain. More information available on i-micronews.com, Conferences & Trade Shows section.

ROHM today announced the availability of a CMOS op-amp featuring the lowest noise in the industry optimized for industrial applications requiring high-accuracy sensing, such as accelerometers used in sonar systems, and optical sensors that handle ultra-small signals.

In recent years, in addition to IoT devices, sensors are being adopted in a variety of applications from portables and vehicle systems to industrial equipment, to improve functionality and provide advanced control. Used to detect and convert various environmental and physical changes into signals, sensors demand high accuracy, but at the same time peripheral sensor circuitry is trending towards lower voltages to achieve greater power savings.

Op-amps are configured at the rear stage to amplify the analog sensor output, but because sensor signals are so weak it is necessary to implement noise countermeasures to ensure high-accuracy transmission. In response, ROHM developed a high noise tolerant op-amp for the automotive market utilizing a vertically integrated production system that leverages original analog design technologies and processes. ROHM has introduced an op-amp that delivers the industry’s best performance against external noise optimized for consumer devices and industrial equipment.

The LMR1802G-LB, developed utilizing ROHM’s analog technology covering circuit design, processes, and layout, reduces input equivalent noise voltage density by half (2.9nV/√Hz at 1kHz, 7.8nV/√Hz at 10Hz) compared to conventional products, significantly improving the detection performance of sensor signals. In addition, best-in-class phase margin (68°) and capacitive load tolerance (500pF) provide excellent stability (difficult to oscillate, easy to handle). This enables accurate amplification of voltages in the order of µV, ensuring support for industrial and consumer applications requiring high-precision sensing.

There are limits to how accurately you can measure things. Think of an X-ray image: it is likely quite blurry and something only an expert physician can interpret properly. The contrast between different tissues is rather poor but could be improved by longer exposure times, higher intensity, or by taking several images and overlapping them. But there are considerable limitations: humans can safely be exposed to only so much radiation, and imaging takes time and resources.

A well-established rule of thumb is the so-called standard quantum limit: the precision of the measurement scales inversely with the square root of available resources. In other words, the more resources – time, radiation power, number of images, etc. – you throw in, the more accurate your measurement will be. This will, however, only get you so far: extreme precision also means using excessive resources.

A team of researchers from Aalto University, ETH Zurich, and MIPT and Landau Institute in Moscow have pushed the envelope and came up with a way to measure magnetic fields using a quantum system – with accuracy beyond the standard quantum limit.

An artificial atom realised from superconducting strips of aluminum on a silicon chip can be employed for the detection of magnetic fields. Credit: Babi Brasileiro / Aalto University

The detection of magnetic fields is important in a variety of fields, from geological prospecting to imaging brain activity. The researchers believe that their work is a first step towards of using quantum-enhanced methods for sensor technology.

‘We wanted to design a highly efficient but minimally invasive measurement technique. Imagine, for example, extremely sensitive samples: we have to either use as low intensities as possible to observe the samples or push the measurement time to a minimum,’ explains Sorin Paraoanu, leader of the Kvantti research group at Aalto University.

Their paper, published in the prestigious journal npj Quantum Information shows how to improve the accuracy of magnetic field measurements by exploiting the coherence of a superconducting artificial atom, a qubit. It is a tiny device made of overlapping strips of aluminium evaporated on a silicon chip – a technology similar to the one used to fabricate the processors of mobile phones and computers.

When the device is cooled to a very low temperature, magic happens: the electrical current flows in it without any resistance and starts to display quantum mechanical properties similar to those of real atoms. When irradiated with a microwave pulse – not unlike the ones in household microwave ovens – the state of the artificial atom changes. It turns out that this change depends on the external magnetic field applied: measure the atom and you will figure out the magnetic field.

But to surpass the standard quantum limit, yet another trick had to be performed using a technique similar to a widely-applied branch of machine learning, pattern recognition.

‘We use an adaptive technique: first, we perform a measurement, and then, depending on the result, we let our pattern recognition algorithm decide how to change a control parameter in the next step in order to achieve the fastest estimation of the magnetic field,’ explains Andrey Lebedev, corresponding author from ETH Zurich, now at MIPT in Moscow.

‘This is a nice example of quantum technology at work: by combining a quantum phenomenon with a measurement technique based on supervised machine learning, we can enhance the sensitivity of magnetic field detectors to a realm that clearly breaks the standard quantum limit,’ Lebedev says.