Category Archives: Device Architecture

Toshiba Corporation (TOKYO:6502) (Toshiba) is in continuing negotiations with three consortia of potential purchasers of Toshiba Memory Corporation (TMC): the Innovation Network Corporation of Japan, Bain Capital Private Equity LP and Development Bank of Japan consortium; a consortium that includes Western Digital; and a consortium that includes Hon Hai. At this point, Toshiba has not made any decision to reduce the pool of candidate purchasers of TMC.

There have been media reports speculating that Toshiba will make a decision on Aug 31 at Toshiba’s Board of Directors meeting. While Toshiba exercised its best efforts to reach a mutually satisfactory definitive agreement with one of the consortia seeking to purchase TMC, the negotiation with each consortium has not reached the point which will allow Toshiba’s Board of Directors could make a decision regarding the sale of TMC.

The memory business requires timely investments, accelerated product development, and the ability to quickly ramp-up large-scale production capacity; Highly reliable memory devices are essential to meet growing demand for storage. Accordingly, Toshiba is looking for a purchaser of TMC that is able to deliver flexible, rapid decision-making and enhanced financial options, and to promote further growth of TMC’s memory business, while also being capable of contributing enough value from the sale of TMC to return the Toshiba group to positive equity.

Toshiba intends to continue negotiations with possible bidders to reach a definitive agreement which meets Toshiba’s objectives at the earliest possible date, and will announce material changes in status in a timely manner.

To perpetuate the pace of innovation and progress in microelectronics technology over the past half-century, it will take an enormous village rife with innovators. This week, about 100 of those innovators throughout the broader technology ecosystem, including participants from the military, commercial, and academic sectors, gathered at DARPA headquarters at the kickoff meeting for the Agency’s new CHIPS program, known in long form as the Common Heterogeneous Integration and Intellectual Property (IP) Reuse Strategies program.

Many future microelectronics systems could be assembled with a library of plug-and-play chiplets that combine their respective modular functions with unprecedented versatility.

Many future microelectronics systems could be assembled with a library of plug-and-play chiplets that combine their respective modular functions with unprecedented versatility.

“Now we are moving beyond pretty pictures and mere words, and we are rolling up our sleeves to do the hard work it will take to change the way we think about, design, and build our microelectronic systems,” said Dan Green, the CHIPS program manager. The crux of the program is to develop a new technological framework in which different functionalities and blocks of intellectual property—among them data storage, computation, signal processing, and managing the form and flow of data—can be segregated into small chiplets, which then can be mixed, matched, and combined onto an interposer, somewhat like joining the pieces of a jigsaw puzzle. Conceivably an entire conventional circuit board with a variety of different but full-sized chips could be shrunk down onto a much smaller interposer hosting a huddle of yet far smaller chiplets.

Central to the design and intention of the program is the creation of a new community of researchers and technologists that mix-and-match mindsets, skillsets, technological strengths, and business interests. That is why the dozen selected prime contractors for the program include large defense companies (Lockheed Martin, Northrop Grumman, and Boeing), large microelectronics companies (Intel, Micron, and Cadence Design Systems), other semiconductor design players (Synopsys, Intrinsix Corp., and Jariet Technologies), and university teams (University of Michigan, Georgia Institute of Technology, and North Carolina State University). What’s more, many of these prime contractors will be working with additional partners who will extend the village of innovators working on the CHIPS program.

“If the CHIPS program is successful, we will gain access to a wider variety of specialized blocks that we will be able to integrate into our systems more easily and with lower costs,” said Green. “This should be a win for both the commercial and defense sectors.”

Among the specific technologies that could emerge from this newly formed research community are compact replacements for entire circuit boards, ultrawideband radio frequency (RF) systems, which require tight integration of fast data converters with powerful processing functions, and, by combining chiplets that provide different accelerator and processor functions, fast-learning systems for teasing out interesting and actionable data from much larger volumes of mundane data. “By bringing the best design capabilities, reconfigurable circuit fabrics, and accelerators from the commercial domain, we should be able to create defense systems just by adding smaller specialized chiplets,” said Bill Chappell, director of DARPA’s Microsystems Technology Office.

“The CHIPS program is part of DARPA’s much larger effort, the Electronics Resurgence Initiative, in which we are striving to build an electronics community that mixes the best of the commercial and defense capabilities for national defense,” Chappell said. “The ERI, which will involve roughly $200 million annual investments for the next four years, will nurture research in materials, device designs, and circuit and system architecture. The next round of investments are expected this September as part of the broader initiative.”

 Yole Développement (Yole) expects the IGBT market to go over US$ 5 billion by 2022 with a major growth coming from IGBT power module. The high performance that SiC and GaN materials can afford is already creating a battlefield with Silicon based IGBT. To overcome this thread, Si IGBT manufacturers need to look for prompt solutions as technologically update their systems for better efficiency or to increase their IGBT portfolio offer.

How is the IGBT market evolving for different applications? How will the IGBT market face the adoption of high performance WBG based devices?… Yole’s power electronics team proposes you today a new technology & market report titled IGBT market and technology trends 2017 report. Yole’s report presents an overview of the IGBT market including detailed forecasts and a new application section focused on energy storage systems. This analysis is also showing the status of the competitive landscape.

Figure 1

Figure 1

The IGBT market represents a very promising bet for the next few years, announces the “More than Moore” market research and strategy consulting company: its analysts invite you to discover the latest IGBT technology trends and market challenges.

“The IGBT industry will follow power electronics’ growth pattern, mainly caused by the high volume automotive market, especially for the electrification of powertrains in EV/HEV ”, asserts Dr Ana Villamor, Technology & Market Analyst, Power Electronics at Yole Développement.

The EV/HEV sector has great growth prospects because it is still an emerging market with tremendous volume potential.

Another big sector for IGBT is clearly motor drives, which keep on growing, thanks to aggressive regulation targets. Yole Développement forecasts a 4.6% CAGR for motor drives from 2016 to 2022. Photovoltaics and wind are very dynamic markets with growth from huge installations being installed during the last few years. It is worth to say that China led the solar panel implementation in 2016, with an impressive 35 GW installed.

“There will be applications for SiC which will impact the IGBT market, for example it is highly possible that it will take over the automotive market”, comments Dr Ana Villamor. “However, we forecast that IGBTs will keep a significant market share in the power electronics industry and will not be replaced completely.”

In fact, even if the IGBT has almost reached its technological limit, new designs and new materials can still be used to improve system performance to overcome the WBG devices arrival. In coming years, there will be new IGBT designs from Infineon, Fuji or ABB coming into the market. Packages are being improved by different manufacturers to decrease parasitics and improve system efficiency. A clear example is the introduction of the embedded techniques for discrete IGBTs and overmolded solutions for IGBT modules to reduce size or increase functional density.

Currently, IGBT manufacturers can have wide voltage ranges in their portfolios, going from 400 V to 6.5k V. The 400 V IGBTs will directly compete with MOSFETs, whereas IGBTs with voltages higher than 600 V will compete with SJ MOSFETs and WBG devices, which exhibit advantages over IGBTs. Lower voltage IGBTs will not be developed since they do not show any advantage compared with MOSFETs.

As IGBTs is a mature technology, the supply chain is well established, with strong partnerships and companies well positioned in each level.

“Therefore, the main IGBT manufacturers that we included in our 2015 report are still in the IGBT best sellers, except ON Semiconductor, which has become one of the top five IGBT vendors after the acquisition of Fairchild at the end of 2016”, explains Dr Ana Villamor. “However, more companies are entering the IGBT market in order to capture added value, like Littelfuse, who just announced the agreement on the acquisition of IXYS Corporation.”

BY PETE SINGER, Editor-in-Chief

At a SEMICON West press conference, SEMI released its Mid-year Forecast. Worldwide sales of new semiconductor manufacturing equipment are projected to increase 19.8 percent to total $49.4 billion in 2017, marking the first time that the semiconductor equipment market has exceeded the market high of $47.7 billion set in 2000. In 2018, 7.7 percent growth is expected, resulting in another record-breaking year—totaling $53.2 billion for the global semiconductor equipment market.

“It’s really an exciting time for the industry in the terms of technology, the growth in information and data and that’s all going to require semiconductors to enable that growth,” said Dan Tracy, senior director, IR&S at SEMI.

The average of various analysts forecast the semiconductor industry in general 12% growth for the year. “It’s a very good growth year for the industry,” Tracy said. “In January, the consensus was about 5% growth for the year and with the improvement in the market and the firmer pricing for memory we see an increase in the outlook for the market.”

The SEMI Mid-year Forecast predicts wafer processing equipment is anticipated to increase 21.7 percent in 2017 to total $39.8 billion. The other front-end segment, which consists of fab facilities equipment, wafer manufacturing, and mask/reticle equipment, will increase 25.6 percent to total $2.3 billion. The assembly and packaging equipment segment is projected to grow by 12.8 percent to $3.4 billion in 2017 while semiconductor test equipment is forecast to increase by 6.4 percent, to a total of $3.9 billion this year.

“Based on the May outlook, we are looking at a record year in terms of tracking equipment spending. This is for new equipment, used equipment, and spending related to the facility that installed the equipment. It will be about a $49 billion market this year. Next year, it’s going to grow to $54 billion, so we have two years in a row of back to back record spending,” Tracy said.

In 2017, South Korea will be the largest equipment market for the first time. After maintaining the top spot for five years, Taiwan will place second, while China will come in third. All regions tracked will experience growth, with the exception of Rest of World (primarily Southeast Asia). South Korea will lead in growth with 68.7 percent, followed by Europe at 58.6 percent, and North America at 16.3 percent.

SEMI forecasts that in 2018, equipment sales in China will climb the most, 61.4 percent, to a total of $11.0 billion, following 5.9 percent growth in 2017. In 2018, South Korea, Taiwan, and China are forecast to remain the top three markets, with South Korea maintaining the top spot to total $13.4 billion. China is forecasted to become the second largest market at $11.0 billion, while equipment sales to Taiwan are expected to reach $10.9 billion.

A new device being developed by Washington State University physicist Yi Gu could one day turn the heat generated by a wide array of electronics into a usable fuel source.

The device is a multicomponent, multilayered composite material called a van der Waals Schottky diode. It converts heat into electricity up to three times more efficiently than silicon — a semiconductor material widely used in the electronics industry. While still in an early stage of development, the new diode could eventually provide an extra source of power for everything from smartphones to automobiles.

“The ability of our diode to convert heat into electricity is very large compared to other bulk materials currently used in electronics,” said Gu, an associate professor in WSU’s Department of Physics and Astronomy. “In the future, one layer could be attached to something hot like a car exhaust or a computer motor and another to a surface at room temperature. The diode would then use the heat differential between the two surfaces to create an electric current that could be stored in a battery and used when needed.”

Gu recently published a paper on the Schottky diode in The Journal of Physical Chemistry Letters.

A new kind of diode

In the world of electronics, Schottky diodes are used to guide electricity in a specific direction, similar to how a valve in a water main directs the flow of liquid going through it. They are made by attaching a conductor metal like aluminum to a semiconductor material like silicon.

Instead of combining a common metal like aluminum or copper with a conventional semiconductor material like silicon, Gu’s diode is made from a multilayer of microscopic, crystalline Indium Selenide. He and a team of graduate students used a simple heating process to modify one layer of the Indium Selenide to act as a metal and another layer to act as a semiconductor. The researchers then used a new kind of confocal microscope developed by Klar Scientific, a start-up company founded in part by WSU physicist Matthew McCluskey, to study their materials’ electronic properties.

Unlike its conventional counterparts, Gu’s diode has no impurities or defects at the interface where the metal and semiconductor materials are joined together. The smooth connection between the metal and semiconductor enables electricity to travel through the multilayered device with almost 100 percent efficiency.

“When you attach a metal to a semiconductor material like silicon to form a Schottky diode, there are always some defects that form at the interface,” said McCluskey, a co-author of the study. “These imperfections trap electrons, impeding the flow of electricity. Gu’s diode is unique in that its surface does not appear to have any of these defects. This lowers resistance to the flow of electricity, making the device much more energy efficient.”

Next steps

Gu and his collaborators are currently investigating new methods to increase the efficiency of their Indium Selenide crystals. They are also exploring ways to synthesize larger quantities of the material so that it can be developed into useful devices.

“While still in the preliminary stages, our work represents a big leap forward in the field of thermoelectrics,” Gu said. “It could play an important role in realizing a more energy-efficient society in the future.”

Following a substantial increase in semiconductor capital expenditures during the first half of this year, IC Insights raised its annual semiconductor capex forecast to a record high of $80.9 billion for 2017, a 20% increase from $67.3 billion in 2016. Previously, 2017 semiconductor capex was expected to grow 12% in 2017 to $75.6 billion.

A little over half of 2017 capex spending is forecast for wafer foundries (28%) and upgrades for NAND flash memory (24%), as shown in Figure 1. With a projected 53% increase in 2017, the DRAM/SRAM segment is expected to display the largest percentage growth in capital expenditures of the major product types this year. With DRAM prices surging since the third quarter of 2016, DRAM manufacturers are once again stepping up spending in this segment. Although the majority of this spending is going towards technology advancement, DRAM producer SK Hynix recently admitted that it can no longer keep up with demand by technology advancements alone and needs to begin adding wafer start capacity.

Figure 1

Figure 1

Even with a DRAM spending surge this year, capital spending for flash memory in 2017 ($19.0 billion) is still expected to be significantly higher than spending allocated to the DRAM/SRAM category ($13.0 billion). Overall, IC Insights believes that essentially all of the spending for flash memory in 2017 will be dedicated to 3D NAND process technology, including production of 3D NAND at Samsung’s giant new fab in Pyeongtaek, South Korea.

Overall, capital spending for the flash memory segment is forecast to register a 33% surge in 2017 after a strong 23% increase in 2016. However, historical precedent in the memory market shows that too much spending usually leads to overcapacity and subsequent pricing weakness. With Samsung, SK Hynix, Micron, Intel, Toshiba/Western Digital/SanDisk, and XMC/Yangtze River Storage Technology all planning to significantly ramp up 3D NAND flash capacity over the next couple of years (and new Chinese producers possibly entering the market), IC Insights believes that the future risk for overshooting 3D NAND flash market demand is high and growing.

Leti, a technology research institute of CEA Tech, and Mentor, a Siemens business, today announced Leti will provide access to the Mentor Veloce emulator to SMEs and startups and will introduce emulation technology to global companies beginning Q3 2017. The Veloce emulator is Mentor’s high-capacity, high-speed, multi-application tool for emulation of system-on chip (SoC) designs that was installed at Leti in 2013.

Emulation is a vital process for more efficient development of complex digital circuits that includes debugging the design at early stages and validating the upstream, onboard software operation.

The Veloce emulator accelerates block and full SoC register-transfer level (RTL) simulations during all phases of the design process, ending the long delay between starting simulations and getting results. It enables pre-silicon testing and debug, can use real-world data, while both hardware and software designs are still fluid.

“Veloce dramatically speeds up the design cycle, because it is 1,000 times faster than traditional RTL simulation tools,” said Thierry Colette, head of Leti’s Architecture, IC Design and Embedded Software division. “It is now possible to verify multi-processor circuits that have several billion transistors – a real competitive advantage that improves return on investment and speeds time to market. But because this powerful tool represents a major investment for microelectronics manufacturers or design houses, Leti is launching this special emulation service to provide our partners direct access to this technology and the benefits it offers.”

“Mentor’s cooperation with CEA-Leti spans a variety of research topics over multiple years,” says Eric Selosse, vice president and general manager of the Mentor Emulation Division. “The intent to proliferate state-of-the-art hardware emulation-based verification methodology to the high technology market is a very attractive goal and we’re proud to contribute to it with our Veloce solutions.”

The Leti offer, which targets European chipmakers, includes Leti’s expert support, such as taking control of device design, optimized implementation within the emulator, debug and analysis of results. Leti also will provide access and support to additional specific tools available in its Grenoble facility, as needed.

To ensure data security, this emulator offer will include:

  • a new chassis and cards representing an emulation capacity of 50 Mgates at this stage
    (could be upgrade on demand)
  • a dedicated and secure network for customers
  • servers dedicated to this offer, connected to a secure network to manage emulation with internal tools.

The network architecture is designed so that Leti partners in this program can remotely view emulation progress or retrieve results.

Silicon – the second most abundant element in the earth’s crust – shows great promise in Li-ion batteries, according to new research from the University of Eastern Finland. By replacing graphite anodes with silicon, it is possible to quadruple anode capacity.

In a climate-neutral society, renewable and emission-free sources of energy, such as wind and solar power, will become increasingly widespread. The supply of energy from these sources, however, is intermittent, and technological solutions are needed to safeguard the availability of energy also when it’s not sunny or windy. Furthermore, the transition to emission-free energy forms in transportation requires specific solutions for energy storage, and lithium-ion batteries are considered to have the best potential.

Researchers from the University of Eastern Finland introduced new technology to Li-ion batteries by replacing graphite used in anodes by silicon. The study analysed the suitability of electrochemically produced nanoporous silicon for Li-ion batteries. It is generally understood that in order for silicon to work in batteries, nanoparticles are required, and this brings its own challenges to the production, price and safety of the material. However, one of the main findings of the study was that particles sized between 10 and 20 micrometres and with the right porosity were in fact the most suitable ones to be used in batteries. The discovery is significant, as micrometre-sized particles are easier and safer to process than nanoparticles. This is also important from the viewpoint of battery material recyclability, among other things. The findings were published in Scientific Reports.

“In our research, we were able to combine the best of nano- and micro-technologies: nano-level functionality combined with micro-level processability, and all this without compromising performance,” Researcher Timo Ikonen from the University of Eastern Finland says. “Small amounts of silicon are already used in Tesla’s batteries to increase their energy density, but it’s very challenging to further increase the amount,” he continues.

Next, researchers will combine silicon with small amounts of carbon nanotubes in order to further enhance the electrical conductivity and mechanical durability of the material.

“We now have a good understanding of the material properties required in large-scale use of silicon in Li-ion batteries. However, the silicon we’ve been using is too expensive for commercial use, and that’s why we are now looking into the possibility of manufacturing a similar material from agricultural waste, for example from barley husk ash,” Professor Vesa-Pekka Lehto explains.

A discovery by two scientists at the Energy Department’s National Renewable Energy Laboratory (NREL) could aid the development of next-generation semiconductor devices.

The researchers, Kwangwook Park and Kirstin Alberi, experimented with integrating two dissimilar semiconductors into a heterostructure by using light to modify the interface between them. Typically, the semiconductor materials used in electronic devices are chosen based on such factors as having a similar crystal structure, lattice constant, and thermal expansion coefficients. The close match creates a flawless interface between layers and results in a high-performance device. The ability to use different classes of semiconductors could create additional possibilities for designing new, highly efficient devices, but only if the interfaces between them can be formed properly.

Park and Alberi determined that ultraviolet (UV) light applied directly to the semiconductor surface during heterostructure growth can modify the interface between two layers. Their paper, “Tailoring Heterovalent Interface Formation with Light,” appears in Scientific Reports.

“The real value of this work is that we now understand how light affects interface formation, which can guide researchers in integrating a variety of different semiconductors in the future,” Park said.

The researchers explored this approach in a model system consisting of a layer of zinc selenide (ZnSe) grown on top of a layer of gallium arsenide (GaAs). Using a 150-watt xenon lamp to illuminate the growth surface, they determined the mechanisms of light-stimulated interface formation by varying the light intensity and interface initiation conditions. Park and Alberi found the UV light altered the mixture of chemical bonds at the interface through photo-induced desorption of arsenic atoms on the GaAs surface, resulting in a greater percentage of bonds between gallium and selenium, which help to passivate the underlying GaAs layer. The illumination also allowed the ZnSe to be grown at lower temperatures to better regulate elemental intermixing at the interface. The NREL scientists suggested careful application of UV illumination may be used to improve the optical properties of both layers.

Littelfuse, Inc. (NASDAQ:LFUS) and IXYS Corporation (NASDAQ:IXYS) today announced that they have entered into a definitive agreement under which Littelfuse will acquire all of the outstanding shares of IXYS in a cash and stock transaction. The transaction represents an equity value of approximately $750 million and enterprise value of $655 million. Under the terms of the agreement, each IXYS stockholder will be entitled to elect to receive, per IXYS share, either $23.00 in cash or 0.1265 of a share of Littelfuse common stock, subject to proration. In total, 50% of IXYS stock will be converted into the cash election option and 50% into the stock election option.

IXYS is a global developer in the power semiconductor and integrated circuit markets with a focus on medium to high voltage power control semiconductors across the industrial, communications, consumer and medical markets. IXYS has a broad customer base, serving more than 3,500 customers through its direct salesforce and global distribution partners. IXYS reported revenues of $322 million in its fiscal 2017 with an adjusted EBITDA margin of approximately 13.5%.

The combined company is expected to have annual revenues of approximately $1.5 billion, with the following compelling strategic and financial benefits:

  • Broader technology platform and capability to expand growth into industrial and electronics markets
  • Increased long-term penetration of power control portfolio in automotive markets, expanding global content per vehicle
  • Heightened engineering expertise and intellectual property around high voltage and silicon carbide semiconductor technologies
  • Increased presence in the semiconductor industry, adding to our scale and volume
  • Strong relationships and complementary overlap in major global electronics distribution partnerships enabling cross-selling
  • Immediately accretive to adjusted EPS and free cash flow post transaction close(2)
  • Expect to generate more than $30 million in annualized cost savings; additional future value created from revenue synergies and tax rate reduction

“As the largest acquisition in our 90-year history, this is an exciting milestone for Littelfuse,” said Dave Heinzmann, President and Chief Executive Officer, Littelfuse. “IXYS’ extensive power semiconductor portfolio and technology expertise fit squarely within our strategy to accelerate our growth within power control and industrial OEM markets. The combination of Littelfuse and IXYS unites complementary capabilities, cultures and relationships.”

“IXYS will operate as the cornerstone of the combined companies’ power semiconductor business,” said Dr. Nathan Zommer, Chairman and Chief Executive Officer of IXYS. “Both Littelfuse and IXYS have long histories of innovation and customer-focused product development, and together, we will embrace the entrepreneurial spirit that has contributed to IXYS’ success in the power semiconductor and integrated circuits market.”

“The combination of IXYS and Littelfuse creates a stronger player in the power semiconductor industry, with the ability to leverage our collective resources and portfolio to create increased value for our customers,” added Uzi Sasson, President and Chief Executive Officer of IXYS. “We believe that being a part of a world-class organization like Littelfuse will provide a bright future for IXYS and the talented people at our respective companies.”

Transaction highlights

The transaction is expected to be immediately accretive to Littelfuse’s adjusted earnings per share and free cash flow in the first full year post transaction close, excluding any acquisition and integration related costs. Littelfuse expects to achieve more than $30 million of annualized cost savings within the first two years after closing the transaction. Longer term, the combination is also expected to create significant revenue synergy opportunities given the companies’ complementary offerings, as well as benefits from future tax rate reduction.

In conjunction with the definitive agreement, Dr. Nathan Zommer, IXYS founder and currently the company’s largest stockholder with approximately 21% ownership, has entered into a voting and support agreement. Subject to the agreement’s terms and conditions, he has agreed to vote his shares in favor of the transaction. After close of the transaction, Dr. Zommer is expected to join Littelfuse’s Board of Directors, subject to the board’s governance and approval process. His technical skills and extensive experience across the semiconductor industry will benefit the combined company with its integration efforts, innovation roadmap and revenue expansion.

The transaction is expected to close in the first calendar quarter of 2018 and is subject to the satisfaction of customary closing conditions, including regulatory approvals and approval by IXYS stockholders. Littelfuse expects to finance the cash portion of the transaction consideration through a combination of existing cash and additional debt.

Morgan Stanley & Co. LLC is serving as financial advisor and Wachtell, Lipton, Rosen & Katz is serving as legal counsel to Littelfuse. Needham & Company, LLC is serving as financial advisor and Latham & Watkins LLP is serving as legal counsel to IXYS.