Category Archives: Device Architecture

Analogix Semiconductor, Inc. and Beijing Shanhai Capital Management Co, Ltd. (Shanhai Capital), today jointly announced the completion of the approximately $500 million acquisition of Analogix Semiconductor. China Integrated Circuit Industry Investment Fund Co., Ltd. (China IC Fund) joined Shanhai Capital’s fund as one of the limited partners.

“We are very pleased to have completed the transaction,” said Dr. Kewei Yang, Analogix Semiconductor’s chairman and CEO. “Enhanced by the strong financial support of our new investors, Analogix’s future is brighter than ever. We are excited to continue building and growing Analogix into a global leader in high-performance semiconductors.”

“As Analogix’s key financial partner and investor, we look forward to leveraging our resources to accelerate the company’s growth into new markets,” said Mr. Xianfeng Zhao, Chairman of Shanhai Capital. “We will build on the strength of the company’s core technology and customer relationships to create an exceptional semiconductor company that will be publicly listed in China.”

Sino-American International Investment Ltd, and Needham & Company, LLC served as financial advisors to Analogix Semiconductor. O’Melveny & Myers LLP served as legal counsel to Analogix Semiconductor.

Pillsbury Winthrop Shaw Pittman LLP and Jingtian & Gongcheng acted as legal counsel to Beijing Shanhai Capital Management Co.

IHS Markit (Nasdaq: INFO) announced that the worldwide semiconductor market showed signs of recovery in 2016 following a down year in 2015. In 2016, the market posted a year-end growth rate of 2 percent with chip growth seen across multiple market segments. Global revenue came in at $352.4 billion, up from $345.6 billion in 2015.

Key growth drivers

Key drivers of this growth were DRAM and NAND flash memory, which grew more than 30 percent collectively in the second half of 2016. Key to this turnaround was supply constraints and strong demand, coupled with an ASP increase. We expect these factors to drive memory revenue into record territory throughout 2017.

Semiconductors used for automotive applications were also a key driver of 2016 growth, with a 9.7 percent expansion by year-end. Chip content in cars continues to climb, with micro components and memory integrated circuits (IC) leading the pack, both experiencing over 10 percent growth in automotive applications.

“The strong component demand that drove record capital expenditures in 2016 also provided the industry with advanced technology platforms which will support further semiconductor revenue growth in 2017,” said Len Jelinek, Senior Director and Chief Analyst for Semiconductor Manufacturing at IHS Markit.

Continued consolidation

Continuing a recent trend, the semiconductor market saw another year of intense consolidation with no signs of slowing down. The year began with the close of the biggest-ever acquisition in the semiconductor industry. Avago Technologies finalized its $37 billion acquisition of Broadcom Corp. to form Broadcom Limited, which jumped to rank fourth in terms of market share (Avago previously ranked 11th). This acquisition resulted in the newly formed company increasing its market share in several market segments, including taking a large lead in the wired application market.

“After some selective divestiture, Broadcom Limited has focused on market segments where its customer base holds dominant market share positions. These also tend to be markets which have fairly stable and visible TAM growth,” said Senior Analyst Brad Shaffer. “These characteristics may help entrench the company’s market share positions in areas where it chooses to compete,” added Shaffer.

Among the top 20 semiconductor suppliers, ON Semiconductor and nVidia enjoyed the largest revenue growth, followed closely by MediaTek. ON and MediaTek achieved growth through multiple acquisitions, while nVidia saw an enormous demand for its GPU technology as it moves into new markets and applications.

Qualcomm remained the top fabless company in 2016 while MediaTek and nVidia moved into the number two and three spots, respectively. The fabless company with the largest market share gain was Cirrus Logic, a major supplier for Apple and Samsung mobile phones. They moved up five spots in 2016, to number 10.

Intel remains in the number one spot for semiconductor suppliers, followed by Samsung. Qualcomm comes in at number three, with plans to increase its market share in 2017 with its pending acquisition of NXP.

Find more information on this topic in the latest release of the Competitive Landscaping Tool from the Semiconductors & Components service at IHS Markit.

Optomechanical devices, which simultaneously confine light waves and mechanical waves to permit interaction between them, can be used both to study fundamental questions in physics and to sense motion in a way similar to electromechanical accelerometers. In smartphones, these electronic components switch the touchscreen between portrait and landscape when they detect rotation by the user.

According to experts in the field, however, the use of optomechanical devices to study macroscopic quantum phenomena – in which the large-scale properties of matter such as mechanical vibration are subject to the laws that govern atoms (quantum mechanics) – or to identify very subtle movements requires extremely high levels of interaction, or coupling, between light waves and mechanical waves.

A group of researchers led by Thiago Pedro Mayer Alegre and Gustavo Silva Wiederhecker at the University of Campinas’s Gleb Wataghin Physics Institute (IF-UNICAMP) in São Paulo State, Brazil, have developed an optomechanical device with a novel design that boosts the coupling between light waves and mechanical waves to higher levels than those reported for similar devices developed in the laboratory. Their work was part of research projects supported by FAPESP.

The new optomechanical device and an experimental demonstration of its functioning are described in an article published in the Optical Society of America’s journal Optics Express.

“The way we designed the device allows the levels of interaction between light waves and mechanical waves to be increased,” Alegre told.

“This means the device can both have practical applications and assist us in our basic research by helping us answer certain questions, such as what happens in the transition between the quantum microscopic world and the classical macroscopic world.”

The device created by the researchers, based on a 24-micron silicon disk supported by a silicon dioxide central pedestal so that the disk can vibrate, has a similar shape to a bullseye at the center of a shooting target, with concentric circular grooves.

Thanks to this shape, light waves and mechanical waves can be confined within the device by separate mechanisms.

The light waves are confined only at the edge of the disk by total internal reflection, an optical phenomenon whereby light within a medium such as water or glass is completely reflected from the surrounding surfaces (such as the air interface) back into the medium, provided the angle of incidence is greater than a certain limiting angle called the critical angle.

Light waves are therefore compressed near the disk edge and travel around the rings for a long time, whereas mechanical vibrations can propagate throughout the material.

However, the concentric rings create frequency regions in which mechanical waves cannot propagate, so that they are confined to the outside edge of the disk, where they interact directly with the light waves.

“Confining light waves and mechanical waves to the disk edge enables us to boost their interaction, which is useful for exploring quantum phenomena in macroscopic objects,” Alegre explained.

In devices developed by other research groups, the concentric circular grooves are used to confine light waves in the central region and not at the edge, as in the case of the device designed by the researchers at IF-UNICAMP.

Based on the finding that, like optical vibrations, mechanical vibrations can be understood as waves, Alegre’s group had the idea of using the concentric rings to confine mechanical waves at the edge of the device and make them interact more intensely with light waves in the same region.

“The point of developing the disk with this bullseye design was to prevent the mechanical mode from ‘seeing’ the central pedestal that supports the disk and allow the entire structure to vibrate, eliminating mechanical losses,” he said.

The device is highly customizable, he added, and compatible with existing industrial fabrication processes, making it a solution for the enhancement of sensors that detect force and motion, for example.

One of its potential applications is in telecommunications as an optical modulator, Alegre explained. Because the device can sense and excite mechanical vibration, it could be used as an optical switch, turning on or off a laser beam that passes through it far more efficiently than the modulating technologies used today in optical telecommunications networks.

“It was fabricated according to current industrial processes, so any group in the world could reproduce it,” he said.

An international team of researchers have created a new structure that allows the tuning of topological properties in such a way as to turn on or off these unique behaviors. The structure could open up possibilities for new explorations into the properties of topological states of matter.

“This is an exciting new direction in topological matter research,” said M. Zahid Hasan, professor of physics at Princeton University and an investigator at Lawrence Berkeley National Laboratory in California who led the study, which was published March 24th in the journal Science Advances. “We are engineering new topological states that do not occur naturally, opening up numerous exotic possibilities for controlling the behaviors of these materials.”

The new structure consists of alternating layers of topological and normal, or trivial, insulators, an architecture that allows the researchers to turn on or off the flow of current through the structure. The ability to control the current suggests possibilities for circuits based on topological behaviors, but perhaps more importantly presents a new artificial crystal lattice structure for studying quantum behaviors.

Theories behind the topological properties of matter were the subject of the 2016 Nobel Prize in physics awarded to Princeton University’s F. Duncan Haldane and two other scientists. One class of matter is topological insulators, which are insulators on the inside but allow current to flow without resistance on the surfaces.

In the new structure, interfaces between the layers create a one-dimensional lattice in which topological states can exist. The one-dimensional nature of the lattice can be thought of as if one were to cut into the material and remove a very thin slice, and then look at the thin edge of the slice. This one-dimensional lattice resembles a chain of artificial atoms. This behavior is emergent because it arises only when many layers are stacked together.

By changing the composition of the layers, the researchers can control the hopping of electron-like particles, called Dirac fermions, through the material. For example, by making the trivial-insulator layer relatively thick – still only about four nanometers – the Dirac fermions cannot travel through it, making the entire structure effectively a trivial insulator. However, if the trivial-insulator layer is thin – about one nanometer – the Dirac fermions can tunnel from one topological layer to the next.

To fashion the two materials, the Princeton team worked with researchers at Rutgers University led by Seongshik Oh, associate professor of physics, who in collaboration with Hasan and others showed in 2012 in work published in Physical Review Letters that adding indium to a topological insulator, bismuth selenide, caused it to become a trivial insulator. Prior to that bismuth selenide (Bi2Se3) was theoretically and experimentally identified as a topological insulator by Hasan’s team which was published in Nature in 2009.

“We had shown that, depending on how much indium you add, the resulting material had this nice tunable property from trivial to topological insulator,” Oh said, referring to the 2012 study.

Graduate students Ilya Belopolski of Princeton and Nikesh Koirala of Rutgers combined two state-of-the-art techniques with new instrumentation development and worked together on layering these two materials, bismuth selenide and indium bismuth selenide, to design the optimal structure. One of the challenges was getting the lattice structures of the two materials to match up so that the Dirac fermions can hop from one layer to the next. Belopolski and Suyang Xu worked with colleagues at Princeton University, Lawrence Berkeley National Laboratory and multiple institutions to use high resolution angle-resolved photoemission spectroscopy to optimize the behavior of the Dirac fermions based on a growth to measurement feedback loop.

Although no topologically similar states exist naturally, the researchers note that analogous behavior can be found in a chain of polyacetylene, which is a known model of one-dimensional topological behavior as described by the 1979 Su-Schrieffer-Heeger’s theoretical model of an organic polymer.

The research presents a foray into making artificial topological materials, Hasan said. “In nature, whatever a material is, topological insulator or not, you are stuck with that,” Hasan said. “Here we are tuning the system in a way that we can decide in which phase it should exist; we can design the topological behavior.”

The ability to control the travel of light-like Dirac fermions could eventually lead future researchers to harness the resistance-less flow of current seen in topological materials. “These types of topologically tunable heterostructures are a step toward applications, making devices where topological effects can be utilized,” Hasan said.

The Hasan group plans to further explore ways to tune the thickness and explore the topological states in connection to the quantum Hall effect, superconductivity, magnetism, and Majorana and Weyl fermion states of matter.

D2S, a supplier of GPU-accelerated solutions for semiconductor manufacturing, today announced the unveiling of the fifth generation of its computational design platform (CDP), which enables extremely fast and precise simulations for semiconductor design and manufacturing. Featuring NVIDIA Pascal-based Tesla P40 GPUs, the fifth-generation CDP achieves 888 Teraflops of processing speed–more than twice as fast as the previous-generation CDP from D2S. The first two units of the fifth-generation CDP will be delivered by the end of the second calendar quarter of 2017, bringing the total number of CDPs across all five platform generations installed worldwide to 20–representing more than five Peta-FLOPs of computing power. CDPs are architected to ensure the high speed, precision and reliability required for 24×7 cleanroom production environments.

“Seismic changes are underway in the photomask and semiconductor industry, prompting the need for greater simulation capability,” stated Aki Fujimura, CEO of D2S. “Inverse lithography technology (ILT) and complex mask shapes, which are already being utilized in some leading-edge chip designs, will be increasingly needed as the industry migrates to smaller design nodes. Significant progress is being made with multi-beam mask writing, which provides write times that are independent of shape count or complexity–making it ideal for these complex features. Progress also continues on EUV mask development, which will require extreme mask writing precision as well as high shape counts. However, with all of these major technology transitions, the computational power required to precisely simulate the physical effects of photomask designs and semiconductor processes will skyrocket–driving the need for GPU acceleration to enable simulation-based processing in reasonable run times.”

The D2S CDP is an extremely powerful processing solution that can simulate the entire mask plane (1.4 quintillion pixels). It is engineered for high reliability, redundancy and recovery to support stringent environmental requirements, and fully conforms with SEMI S2. The water-cooled CDP design is optimized for cleanroom manufacturing environments.

The newest application for the D2S CDP is inline linearity correction for multi-beam mask writing, which provides pixel-level dose correction to enhance the printability of masks incorporating more complex and smaller features. A summary of the current semiconductor manufacturing applications where D2S GPU-accelerated CDPs are being used include:

  • model-based mask data preparation (MB-MDP) for designing leading-edge photomasks that require increasingly complex mask shapes;
  • wafer plane analysis of mask images captured in scanning electron microscopy (SEM) systems to accurately identify mask problems that matter to the wafer in interactive time;
  • inline thermal-effect correction of eBeam mask writers to lower write times to an acceptable level;
    geometric checking and manipulation of curvilinear shapes on masks and wafers; and
  • inline linearity correction and printability enhancement for the NuFlare MBM-1000 multi-beam mask writer

“Multi-beam is an enabling technology for writing curvilinear ILT features due to its ability to handle any mask shape without loss of accuracy or speed,” stated Noriaki Nakayamada, chief specialist at NuFlare Technology. “Since curvilinear mask data correction for dose and resist effects is required to make ILT possible, implementing inline linearity correction in multi-beam machines is useful, as it eliminates the need to add an extra offline data preparation step. However, doing so is extremely compute-intensive and difficult to accomplish. D2S GPU acceleration technology makes inline linearity correction possible for the first time, which can significantly reduce turnaround time for mask processing.”

“GPUs excel at simulating natural phenomena and work well in low latency situations, making them an ideal solution for advanced semiconductor manufacturing,” added Fujimura. “We’re pleased to see that the industry is increasingly recognizing the benefits of GPU acceleration. For example, the Photomask Japan Symposium taking place this week in Yokohama is, for the first time, dedicating multiple sessions of its program to the use of GPUs in mask making. That’s an important signal that GPU acceleration has arrived and will be a key enabler for leading-edge mask and chip designs.”

D2S offers its GPU-accelerated platform as part of its TrueMask family of products and as custom OEM additions to manufacturing systems. D2S will present a paper co-authored with NuFlare Technology on GPU-accelerated inline linearity correction during the “Use of GPU in Mask Making II” session at the Photomask Japan 2017 Symposium on Wednesday, April 5 from 16:30 to 18:00.

Cadence Design Systems, Inc. (NASDAQ:  CDNS) today announced the release of the new Virtuoso Advanced-Node Platform supporting advanced 7nm designs. Through collaboration with early 7nm FinFET customers, Cadence has expanded the Virtuoso custom design platform with innovative new capabilities to manage design complexity and process effects introduced with this advanced-node process. The Virtuoso Advanced-Node Platform update supports all major advanced FinFET technologies with proven results, while improving designer productivity at 7nm.

To address the many technical challenges of 7nm design, the Virtuoso Advanced-Node Platform offers a variety of layout capabilities, including advanced editing with multi-pattern color awareness, FinFET grids, and module generator (ModGen) device arrays. Additionally, customers can take advantage of variation analysis in their circuit design flows utilizing Monte Carlo analysis across corners to address variability with the Spectre® Accelerated Parallel Simulator, the Virtuoso ADE Product Suite and the Virtuoso Schematic Editor.

“As a leader in mobile computing, we require the highest performance, lowest power and highest density possible to deliver innovative, advanced-node designs,” said Ching San Wu, general manager of Analog Design and Circuit Technology at MediaTek. “Through our strong collaboration and continued partnership with Cadence, we have been able to develop and deploy a custom design methodology based on the Virtuoso Advanced-Node Platform. With our recent successful tapeout, we took advantage of its many unique capabilities designed to manage the challenges presented at 7nm.”

Key features in the updated Virtuoso Advanded-Node Platform include:

  • Multi-patterning and color-aware layout: Provides essential new support of a variety of fully colored “multi-patterned” custom design flows, which are a baseline requirement for the 7nm process and enable users to be more productive in their designs.
  • ModGen device arrays: Offers designers a set of modules that have been co-developed in close collaboration with key partners to improve designer productivity and mitigate layout complexities at the 7nm process node.
  • Automated FinFET placement: Provides automatic FinFET grid placement that simplifies the overall FinFET-based coloring design methodologies needed at 7nm. By adhering to 7nm process constraints, the Virtuoso Advanced-Node Platform greatly simplifies layout creation and minimizes errors that can be pervasive when designing at 7nm, while decreasing layout design time by up to 50 percent on custom digital and analog blocks.
  • Variation analysis: Enables high-performance Monte Carlo analysis targeting FinFET technology and high-sigma analysis, which can reduce the overall time to run simulations by a factor of 10.

“Through constant innovation and strategic partnerships with industry leaders, Cadence has solidified its leading role in providing advanced-node custom design tools,” said Tom Beckley, senior vice president and general manager, Custom IC & PCB Group at Cadence. “Through our extensive work with customers such as MediaTek, we’ve been able to validate that our approaches greatly reduce the overhead inherent in designing at 7nm in order to help deliver the best possible silicon. We currently have many customers that have completed successful tapeouts and delivered production designs using the Virtuoso Advanced-Node Platform.”

USB flash drives are already common accessories in offices and college campuses. But thanks to the rise in printable electronics, digital storage devices like these may soon be everywhere — including on our groceries, pill bottles and even clothing.

Duke University researchers have brought us closer to a future of low-cost, flexible electronics by creating a new “spray-on” digital memory device using only an aerosol jet printer and nanoparticle inks.

Duke University researchers have developed a new 'spray-on' digital memory (upper left) that could be used to build programmable electronic devices on flexible materials like paper, plastic or fabric. To demonstrate a simple application of their device, they used their memory to program different patterns of four LED lights in a simple circuit. Credit: Matthew Catenacci

Duke University researchers have developed a new ‘spray-on’ digital memory (upper left) that could be used to build programmable electronic devices on flexible materials like paper, plastic or fabric. To demonstrate a simple application of their device, they used their memory to program different patterns of four LED lights in a simple circuit. Credit: Matthew Catenacci

The device, which is analogous to a 4-bit flash drive, is the first fully-printed digital memory that would be suitable for practical use in simple electronics such as environmental sensors or RFID tags. And because it is jet-printed at relatively low temperatures, it could be used to build programmable electronic devices on bendable materials like paper, plastic or fabric.

“We have all of the parameters that would allow this to be used for a practical application, and we’ve even done our own little demonstration using LEDs,” said Duke graduate student Matthew Catenacci, who describes the device in a paper published online March 27 in the Journal of Electronic Materials.

At the core of the new device, which is about the size of a postage stamp, is a new copper-nanowire-based printable material that is capable of storing digital information.

“Memory is kind of an abstract thing, but essentially it is a series of ones and zeros which you can use to encode information,” said Benjamin Wiley, an associate professor of chemistry at Duke and an author on the paper.

Most flash drives encode information in series of silicon transistors, which can exist in a charged state, corresponding to a “one,” and an uncharged state, corresponding to a “zero,” Wiley said.

The new material, made of silica-coated copper nanowires encased in a polymer matrix, encodes information not in states of charge but instead in states of resistance. By applying a small voltage, it can be switched between a state of high resistance, which stops electric current, and a state of low resistance, which allows current to flow.

And, unlike silicon, the nanowires and the polymer can be dissolved in methanol, creating a liquid that can be sprayed through the nozzle of a printer.

“We have developed a way to make the entire device printable from solution, which is what you would want if you wanted to apply it to fabrics, RFID tags, curved and flexible substrates, or substrates that can’t sustain high heat,” Wiley said.

To create the device, Catenacci first used commercially-available gold nanoparticle ink to print a series of gold electrodes onto a glass slide. He then printed the copper-nanowire memory material over the gold electrodes, and finally printed a second series of electrodes, this time in copper.

To demonstrate a simple application, Catenacci connected the device to a circuit containing four LED lights. “Since we have four bits, we could program sixteen different states,” Catenacci said, where each “state” corresponds to a specific pattern of lights. In a real-world application, each of these states could be programmed to correspond to a number, letter, or other display symbol.

Though other research groups have fabricated similar printable memory devices in recent years, this is the first to combine key properties that are necessary for practical use. The write speed, or time it takes to switch back and forth between states, is around three microseconds, rivaling the speed of flash drives. Their tests indicate that written information may be retained for up to ten years, and the material can be re-written many times without degrading.

While these devices won’t be storing digital photos or music any time soon — their memory capacity is much too small for that — they may be useful in applications where low cost and flexibility are key, the researchers say.

“For example, right now RFID tags just encode a particular produce number, and they are typically used for recording inventory,” Wiley said. “But increasingly people also want to record what environment that product felt — such as, was this medicine always kept at the right temperature? One way these could be used would be to make a smarter RFID tags that could sense their environments and record the state over time.”

The Semiconductor Industry Association (SIA), representing U.S. leadership in semiconductor manufacturing, design, and research, today announced worldwide sales of semiconductors reached $30.4 billion for the month of February 2017, an increase of 16.5 percent compared to the February 2016 total of $26.1 billion. Global sales in February were 0.8 percent lower than the January 2017 total of $30.6 billion, exceeding normal seasonal market performance. February marked the global market’s largest year-to-year growth since October 2010. All monthly sales numbers are compiled by the World Semiconductor Trade Statistics (WSTS) organization and represent a three-month moving average.

“The global semiconductor industry has posted strong sales early in 2017, with memory products like DRAM and NAND flash leading the way,” said John Neuffer, president and CEO, Semiconductor Industry Association. “Year-to-year sales increased by double digits across most regional markets, with the China and Americas markets showing particularly strong growth. Global market trends are favorable for continuing sales growth in the months ahead.”

Year-to-year sales increased across all regions: China (25.0 percent), the Americas (19.1 percent), Japan (11.9 percent), Asia Pacific/All Other (11.2 percent), and Europe (5.9 percent). Month-to-month sales increased modestly in Asia Pacific/All Other (0.5 percent) but decreased slightly across all others: Europe (-0.6 percent), Japan (-0.9 percent), China (-1.0 percent), and the Americas (-2.3 percent).

Neuffer also noted the recent growth of foreign semiconductor markets is a reminder of the importance of expanding U.S. semiconductor companies’ access to global markets, which is one of SIA’s policy priorities for 2017. The U.S. industry accounts for nearly half of the world’s total semiconductor sales, and more than 80 percent of U.S. semiconductor company sales are to overseas markets, helping make semiconductors one of America’s top exports.

February 2017

Billions

Month-to-Month Sales                               

Market

Last Month

Current Month

% Change

Americas

6.13

5.99

-2.3%

Europe

2.84

2.82

-0.6%

Japan

2.79

2.77

-0.9%

China

10.15

10.05

-1.0%

Asia Pacific/All Other

8.72

8.76

0.5%

Total

30.64

30.39

-0.8%

Year-to-Year Sales                          

Market

Last Year

Current Month

% Change

Americas

5.03

5.99

19.1%

Europe

2.66

2.82

5.9%

Japan

2.47

2.77

11.9%

China

8.04

10.05

25.0%

Asia Pacific/All Other

7.88

8.76

11.2%

Total

26.08

30.39

16.5%

Three-Month-Moving Average Sales

Market

Sept/Oct/Nov

Dec/Jan/Feb

% Change

Americas

6.25

5.99

-4.2%

Europe

2.88

2.82

-2.3%

Japan

2.90

2.77

-4.6%

China

10.04

10.05

0.1%

Asia Pacific/All Other

8.94

8.76

-2.0%

Total

31.02

30.39

-2.0%

 

Telit, a global enabler of the Internet of Things (IoT), today announced that it is celebrating the 100th installation of its secureWISE software platform in a 300mm semiconductor fabrication plant.

As part of Telit’s IoT Factory Solutions, secureWISE has been providing over 12 years of secure remote IoT connectivity to tool manufacturers (OEMs) for the semiconductor industry. Telit’s IoT Factory Solutions focuses the company’s vision of connected factories, connected machines, and connected consumers and ties directly into its core IoT business. Building on 15 years of experience in industrial automation solutions deployed worldwide and connecting more than $300 billion in manufacturing assets, Telit is making it easy for customers to take advantage of the IIoT opportunity with multiple paths to deployment.

Telit’s secureWISE has been widely recognized as the de-facto solution for highly-secure remote access to semiconductor equipment. The software serves 18 of the top 20 OEMs and is used by every major integrated device manufacturer (IDM) and foundry to securely connect over 250 different tool types with their manufacturers. Connecting more fabs and OEMs than any other platform in the industry, secureWISE delivers secure, configurable end-to-end remote IoT connectivity across a closed, private network. It allows fabs and OEMs to remotely collaborate in ways that improve equipment performance at every stage of the process and lifecycle while protecting valuable intellectual property (IP).

Major semiconductor tool makers have introduced high availability service models that are tightly embedded into their machines installed at the fabs. OEMs are now able to use IoT and remotely collect data, to analyze, fix – as well as predict – any problem with their machines on the semiconductor production floor from any global location. They can offer immediate service and support from subject matter experts to the fabs. In turn, these new service models result in improved uptime and higher reliability of production tools.

The secureWISE eCentre server gives a fab full control of how, when, and what tools can be accessed, assuring that the OEM doesn’t have any unauthorized direct access to production tools. Furthermore, these built-in role-based access functions give fabs a detailed audit trail with comprehensive reporting and business analytics of all activities.

“We are proud of this milestone and the recognition that the semiconductor industry has made secureWISE their de-facto IoT software platform for secure remote monitoring and mediation of mission-critical manufacturing tools,” said Oozi Cats, CEO of Telit. “This is another testament to our fast-growing position around industrie 4.0 through our IoT Factory Solutions division, and it also illustrates how security is an integral part of our DNA, extending across all of Telit’s products and services.”

Spanning the globe, secureWISE is rapidly extending beyond 300mm fabs with new deployments across 200mm fabs, flat panel displays, solar and other manufacturing facilities.

Tiny “black holes” on a silicon wafer make for a new type of photodetector that could move more data at lower cost around the world or across a datacenter. The technology, developed by electrical engineers at the University of California, Davis, and W&WSens Devices, Inc. of Los Altos, Calif., a Silicon Valley startup, is described in a paper published April 3 in the journal Nature Photonics.

“We’re trying to take advantage of silicon for something silicon cannot usually do,” said Saif Islam, professor of electrical and computer engineering at UC Davis, who co-lead the project together with the collaborators at W&WSens Devices, Inc. Existing high-speed photodetector devices use materials such as gallium arsenide. “If we don’t need to add non-silicon components and can monolithically integrate with electronics into a single silicon chip, the receivers become much cheaper.”

The new detector uses tapered holes in a silicon wafer to divert photons sideways, preserving the speed of thin-layer silicon and the efficiency of a thicker layer. So far, Islam’s group has built an experimental photodetector and solar cell using the new technology. The photodetector can convert data from optical to electronics at 20 gigabytes per second (or 25 billion bits per second, more than 200 times faster than your cable modem) with a quantum efficiency of 50 percent, the fastest yet reported for a device of this efficiency.

Datacenters need fast connections

The growth of datacenters that power the internet “cloud” has created a demand for devices to move large amounts of data, very fast, over short distances of a few yards to hundreds of yards. Such connections could also be used for high-speed home connections, Islam said.

When computer engineers want to move large amounts of data very fast, whether across the world or across a data center, they use fiber-optic cables that transmit data as pulses of light. But these signals need to be converted to electronic pulses at the receiving end by a photodetector. You can use silicon as a photodetector – incoming photons generate a flow of electrons. But there’s a tradeoff between speed and efficiency. To capture most of the photons, the piece of silicon needs to be thick, and that makes it relatively slow. Make the silicon thinner so it works faster, and too many photons get lost.

Instead, circuit designers have used materials such as gallium arsenide and indium phosphide to make high-speed, high-efficiency photodetectors. Gallium arsenide, for example, is about ten times as efficient as a silicon at the same scale and wavelength. But it is significantly more expensive and cannot be monolithically integrated with silicon electronics.

Tapered holes as light traps

Islam’s group began by experimenting with ways to increase the efficiency of silicon by adding tiny pillars or columns, then holes to the silicon wafer. After two years of experiments, they settled on a pattern of holes that taper towards the bottom.

“We came up with a technology that bends the incoming light laterally through thin silicon,” Islam said.

The idea is that photons enter the holes and get pulled sideways into the silicon. The wafer itself is about two microns thick, but because they move sideways, the photons travel through 30 to 40 microns of silicon, like the ripple of waves on a pond when a pebble is dropped into the water.

The holes-based device can also potentially work with a wider range of wavelengths of light than current technology, Islam said.