Category Archives: Displays

jimmy sized 4Solid State Technology is pleased to announced that Jimmy Goodrich of the Semiconductor Industry Association is the latest distinguished guest confirmed to speak at The ConFab 2016.

Jimmy Goodrich is vice president for global policy at SIA. In this role, Mr. Goodrich works closely with SIA member companies, the Administration, Congress, domestic and international stakeholders, and foreign government officials to advance all aspects of SIA’s international policy agenda. Mr. Goodrich is also an Executive Committee member of the United States Information Technology Office (USITO), representing SIA in his capacity.

Mr. Goodrich has nearly a decade of experience working with Chinese and global stakeholders on technology policy issues. He most recently served as Director of Global Policy at the Information Technology Industry Council (ITI), where he worked on a wide range of China and Asia-Pacific technology policy issues relating to cyber security, trade, standards, and Internet governance. Before joining ITI, Mr. Goodrich was the Director for Greater China Government Affairs at Cisco Systems in Beijing. He also has held positions at APCO Worldwide’s Beijing office, a public affairs consultancy, and USITO, which represents U.S. information technology firms in China.

Mr. Goodrich has a bachelor’s degree in comparative politics and East Asian studies from Ohio University.  He lived in China for more than 7 years and is fluent in Mandarin.

Space is limited, but there’s still time to register for The ConFab 2016. To learn more, visit theconfab.com.

Communication with suppliers in the Ukraine and China have continued to verify expected neon shortages occurring toward the end of 2016. Although supply appears stable now, inventories purchased during the second half of 2015 will deplete inventories on the supplier side toward the end of this year.

“Projections of historical Neon growth can no longer be used to predict the future,” said TECHCET’s President/CEO, Lita Shon-Roy. “Even with the recovery of the Neon supply chain, Neon conservation actions, and new sources in China, we predict that Neon demand will grow faster than Neon supply,” she added. Inventory has caused pricing to degrade, however, prices are expected to rise.

The factors affecting the supply side, along with the demand drivers, are covered in the recently updated Critical Materials Report on Neon, and will be featured at the Critical Materials Conference May 5-6 in Hillsboro.

The largest and most rapidly growing Neon demand drivers are Lasik, OLED/FPD (displays) and DUV lithography. However, Neon gas consumed by DUV excimer laser gases is growing at a faster pace and represents more than 90% of world’s Neon consumption.

Semiconductor lithographic use of Neon is increasing more rapidly than expected for several reasons including the delay of EUVL while demand for finer line width patterning is increasing. In addition, new consumer related markets drive increased usage of legacy device processing. Each increase in the number of lithographic steps increases the need for DUV lithography, and drives up the volume demand for Neon. This is true for V-NAND process flows, as well as DRAM and Logic devices dependent on multi-patterning. Next General Lithography reports continue to support that DUV will keep supporting the industry with potential SAOP being used at the 7nm node.

About The Critical Materials Conference

The Critical Materials Conference, scheduled for May 5-6, in Hillsboro, Oregon is an open forum portion of the Critical Materials Council meetings. Registration is open to the public. For more information on the CMC Conference please go to www.cmcfabs.org/seminars/ .

Juelich physicists have discovered unexpected effects in doped graphene – i.e. graphene that is mixed with foreign atoms. They investigated samples of the carbon compound enriched with the foreign atom nitrogen on various substrate materials. Unwanted interactions with these substrates can influence the electric properties of graphene. The researchers at the Peter Gruenberg Institute have now shown that effective doping depends on the choice of substrate material. The scientists’ results were published in the journal Physical Review Letters.

Harder than diamond and tougher than steel, light weight, transparent, flexible, and extremely conductive: the mesh material graphene is regarded as the material of the future. It could make computers faster, mobile phones more flexible, and touchscreens thinner. But so far, the industrial production of the carbon lattice, which is only one atom thick, has proven problematic: in almost all cases, a substrate is required. The search for a suitable material for this purpose is one of the major challenges on the path towards practical applications because if undesirable interactions occur, they can cause the graphene to lose its electric properties.

For some years, scientists have been testing silicon carbide – a crystalline compound of silicon and carbon – for its suitability as a substrate material. When the material is heated to more than 1400 degrees Celsius in an argon atmosphere, graphene can be grown on the crystal. However, this ‘epitaxial monolayer graphene’ displays – very slight – interaction with the substrate, which limits its electron mobility.

In order to circumvent this problem, hydrogen is introduced into the interface between the two materials. This method is known as hydrogen intercalation. The bonds between the graphene and the substrate material are separated and saturated by the hydrogen atoms. This suppresses the electronic influence of the silicon crystal while the graphene stays mechanically joined with the substrate: quasi-free-standing monolayer graphene.

High-precision measurements with standing X-rays

For practical applications, the electrical properties of graphene must be modifiable – for example by introducing additional electrons into the material. This is effected by targeted “contamination” of the carbon lattice with foreign atoms. For this process, known as doping, the graphene is bombarded with nitrogen ions and then annealed. This results in defects in the lattice structure: some few carbon atoms – fewer than 1 % – separate from the lattice and are replaced with nitrogen atoms, which bring along additional electrons.

Scientists at Juelich’s Peter Gruenberg Institute – Functional Nanostructures at Surfaces (PGI-3) have now, for the first time, studied whether and how the structure of the substrate material influences this doping process. At the synchrotron radiation source Diamond Light Source in Didcot, Oxfordshire, UK, Francois C. Bocquet and his colleagues doped samples of epitaxial and quasi-free-standing monolayer graphene and investigated its structural and electronic properties. By means of standing X-ray wave fields, they were able to scan both graphene and substrate at a precision of a few millionths of a micrometre – less than a tenth of the radius of an atom.

Nitrogen atoms in the interface layer are also suitable for doping

Their findings were surprising. “Some of the nitrogen atoms diffused from the graphene into the silicon carbide,” explains Bocquet. “It was previously believed that the nitrogen bombardment only affected the graphene, but not the substrate material.”

Although both samples were treated in the same way, they exhibited different nitrogen concentrations, but almost identical electronic doping: not all nitrogen atoms were integrated in the graphene lattice, nevertheless the number of electrons in the graphene rose as if this were the case. The key to this unexpected result lies in the different behaviour of the interface layers between graphene and substrate. For the epitaxial graphene, nothing changed: the interface layer remained stable, the structure unchanged. In the quasi-free-standing graphene, however, some of the hydrogen atoms between graphene and substrate were replaced with nitrogen atoms. According to Bocquet: “If you examine the quasi-free-standing graphene, you will find a nitrogen atom underneath the graphene coat in some places. These nitrogen atoms, although they are not part of the graphene, can dope the lattice without destroying it. This unforeseen result is very promising for future applications in micro- and nanoelectronics.”

Positive growth returned to India’s liquid crystal display (LCD) TV market in the fourth quarter (Q4) of 2015, after the industry posted declines in the second quarter (Q2) and no growth in the third quarter (Q3). With more Indians transitioning from cathode-ray tube (CRT) TVs to LCD, the overall consumer LCD TV market in India grew 18 percent in Q4 2015 to reach 2.6 million units, according to IHS Inc. (NYSE: IHS), a global source of critical information and insight.

Other emerging nations did not fare as well as India in Q4 last year, based on the latest information from the IHS TV Sets Intelligence Service. Ukraine’s LCD TV market fell by two thirds (66 percent) in Q4 2015, and Russia’s market dropped by half (48 percent). Brazil did not decline as precipitously, but still posted an 18 percent decline.

“Compared to other emerging nations, India is still early in the process of transitioning from CRT to LCD, so there is a lot of room left for market growth,” said Hisakazu Torii, senior director of consumer device research for IHS Technology. “While India is not immune from currency devaluations, the country also has a stronger demand base than others.”

While unit sales are on the rise, India posted a smaller average screen size of 31.7 inches, because the average size of homes in India tends to be smaller than other countries and households are upgrading from very small 20-inch-class CRT TVs. By way of comparison, China and the United States boast the largest average screen size of 44 inches and 43 inches, respectively, for TVs shipped in the fourth quarter of 2015.

MagnaChip Semiconductor Corporation (“MagnaChip”) (NYSE:  MX), a Korea-based designer and manufacturer of analog and mixed-signal semiconductor products, today announced that its cumulative shipment of display driver ICs for organic light-emitting diode (OLED) TVs has surpassed the 6 million cumulative unit mark since initial shipments began in 2013.

The OLED Display driver IC is a critical semiconductor component transmitting both digital and analog signals to an OLED panel which in turn creates and displays an image. OLED displays require a significantly higher level of device and panel development technology as well as enhanced manufacturing processes beyond what is required for generic flat panel LCD displays. MagnaChip has been supplying its display driver ICs to top-tier OLED TV makers since 2013 and will continue to enhance its OLED product performance and portfolio of products to address the needs of customers in this expanding market.

Market research firm IHS Inc., has projected that the global OLED TV market will record double-digit unit growth into 2020 and beyond while demand for flat panel LCD TVs will remain flat.

OLED TV market forecast (million units)  

2015

2016

2017

2018

2019

2020

0.5

1.4

2.9

4.6

7.9

12.0

* Source: IHS Inc. OLED TV shipment forecast

“MagnaChip has been a leader in the development and manufacture of OLED display drivers from the beginning and is well positioned to participate in the growth of this expanding market,” said YJ Kim, MagnaChip’s CEO. “We will continue to strengthen our technology and deliver differentiated and high-quality products in order to meet the growing needs of our global custom