Category Archives: LED Manufacturing

The trick is to be able to use beryllium atoms in gallium nitride. Gallium nitride is a compound widely used in semiconductors in consumer electronics from LED lights to game consoles. To be useful in devices that need to process considerably more energy than in your everyday home entertainment, though, gallium nitride needs to be manipulated in new ways on the atomic level.

“There is growing demand for semiconducting gallium nitride in the power electronics industry. To make electronic devices that can process the amounts of power required in, say, electric cars, we need structures based on large-area semi-insulating semiconductors with properties that allow minimising power loss and can dissipate heat efficiently. To achieve this, adding beryllium into gallium nitride – or ‘doping’ it – shows great promise,” explains Professor Filip Tuomisto from Aalto University.

Sample chamber of the positron accelerator. Credit: Hanna Koikkalainen

Sample chamber of the positron accelerator. Credit: Hanna Koikkalainen

Experiments with beryllium doping were conducted in the late 1990s in the hope that beryllium would prove more efficient as a doping agent than the prevailing magnesium used in LED lights. The work proved unsuccessful, however, and research on beryllium was largely discarded.

Working with scientists in Texas and Warsaw, researchers at Aalto University have now managed to show – thanks to advances in computer modelling and experimental techniques – that beryllium can actually perform useful functions in gallium nitride. The article published in Physical Review Letters shows that depending on whether the material is heated or cooled, beryllium atoms will switch positions, changing their nature of either donating or accepting electrons. “Our results provide valuable knowledge for experimental scientists about the fundamentals of how beryllium changes its behaviour during the manufacturing process. During it – while being subjected to high temperatures – the doped compound functions very differently than the end result,” describes Tuomisto.

If the beryllium-doped gallium nitride structures and their electronic properties can be fully controlled, power electronics could move to a whole new realm of energy efficiency.

“The magnitude of the change in energy efficiency could as be similar as when we moved to LED lights from traditional incandescent light bulbs. It could be possible to cut down the global power consumption by up to ten per cent by cutting the energy losses in power distribution systems,” says Tuomisto.

Researchers have developed a technique that allows users to collect 100 times more spectrographic information per day from microfluidic devices, as compared to the previous industry standard. The novel technology has already led to a new discovery: the speed of mixing ingredients for quantum dots used in LEDs changes the color of light they emit – even when all other variables are identical.

Researchers have discovered that the speed of mixing ingredients for quantum dots used in LEDs changes the color of light they emit -- even when all other variables are identical. Credit: Milad Abolhasani

Researchers have discovered that the speed of mixing ingredients for quantum dots used in LEDs changes the color of light they emit — even when all other variables are identical. Credit: Milad Abolhasani

“Semiconductor nanocrystals are important structures used in a variety of applications, ranging from LED displays to solar cells. But producing nanocrystalline structures using chemical synthesis is tricky, because what works well on a small scale can’t be directly scaled up – the physics don’t work,” says Milad Abolhasani, an assistant professor of chemical and biomolecular engineering at North Carolina State University and corresponding author of a paper on the work.

“This challenge has led to an interest in continuous nanomanufacturing approaches that rely on precisely controlled microfluidic-based synthesis,” Abolhasani says. “But testing all of the relevant variables to find the best combination for manufacturing a given structure takes an extremely long time due to the limitations of the existing monitoring technologies – so we decided to build a completely new platform.”

Currently, microfluidic monitoring technologies are fixed in place, and monitor either absorption or fluorescence. Fluorescence data tells you what the crystal’s emission bandgap is – or what color of light it emits – which is important for LED applications. Absorption data tells you the crystal’s size and concentration, which is relevant for all applications, as well as its absorption bandgap – which is important for solar cell applications.

To monitor both fluorescence and absorption you’d need two separate monitoring points. And, being fixed in place, people would speed up or slow down the flow rate in the microfluidic channel to control the reaction time of the chemical synthesis: the faster the flow rate, the less reaction time a sample has before it hits the monitoring point. Working around the clock, this approach would allow a lab to collect about 300 data samples in 24 hours.

Abolhasani and his team developed an automated microfluidic technology called NanoRobo, in which a spectrographic monitoring module that collects both fluorescent and absorption data can move along the microfluidic channel, collecting data along the way. The system is capable of collecting 30,000 data samples in 24 hours – expediting the discovery, screening, and optimization of colloidal semiconductor nanocrystals, such as perovskite quantum dots, by two orders of magnitude. Video of the automated system can be seen at https://www.youtube.com/watch?v=FBQoSDdn_Uk.

And, because of the translational capability of the novel monitoring module, the system can study reaction time by moving along the microfluidic channel, rather than changing the flow rate – which, the researchers discovered, makes a big difference.

Because NanoRobo allowed researchers to monitor reaction time and flow rate as separate variables for the first time, Abolhasani was the first to note that the velocity of the samples in the microfluidic channel affected the size and emission color of the resulting nanocrystals. Even if all the ingredients were the same, and all of the other conditions were identical, samples that moved – and mixed – at a faster rate produced smaller nanocrystals. And that affects the color of light those crystals emit.

“This is just one more way to tune the emission wavelength of perovskite nanocrystals for use in LED devices,” Abolhasani says.

NC State has filed a provisional patent covering NanoRobo and is open to exploring potential market applications for the technology.

Pixelligent Technologies, the inventor of PixClear high-index nanocomposites for the OLED display, HD display, and solid state lighting markets, announced today it has named Alain Harrus, Ph.D. and Gene Banucci, Ph.D. to the Pixelligent Board of Directors.

“Alain and Gene are joining the Pixelligent team at a critical time in our development as we are emerging from years of product development and application engineering, to widespread adoption of our nanocomposites across all of our target markets. The combined vast experience which Alain Harrus brings on the OLED and semiconductor equipment front, and that Gene Banucci brings from having built one of the most successful advanced materials companies, is an incredibly valuable addition to the Pixelligent team and we are honored to have them,” commented Craig Bandes, CEO of Pixelligent Technologies.

Alain Harrus is currently the CEO of Kateeva, a manufacturer of a deposition equipment platform utilizing ink jet printing, with its initial focus on mass production of OLED displays. Kateeva’s innovations are helping to accelerate the adoption of OLED and other advanced display technologies. Prior to Kateeva, Alain was a Partner at Crosslink Capital, a San Francisco-based venture capital company where he led the firm’s semiconductor and energy technology investment activities. Before Crosslink he was the CTO at Novellus Systems—now part of Lam Research. “I’m excited to be joining the Pixelligent Board as the Company is entering its inflection point and emerging as a leading provider of high-efficiency materials to the OLED and HD display markets,” said Alain Harrus. Pixelligent and Kateeva have been partnering to optimize advanced display process solutions for the OLED for the past 12 months.

Gene Banucci is the former founding CEO of ATMI.  Gene served as CEO of ATMI from 1986-2004 and remained on the Board until the company was sold for $1.1B in 2014. Under his leadership the company completed an IPO and he grew the company to $245 million in revenues when he retired.  Since retiring as CEO, he has served on over 10 Boards across numerous industries.  “I have known and worked with executives at Pixelligent and have been following the Company’s progress for the last few years.  I am impressed with the balanced approach that Pixelligent has executed on both the market-leading materials they have developed as well as their proprietary mass production manufacturing platform.  I look forward to working with the team to help firmly establish Pixelligent as a leading advanced materials supplier to the OLED and Solid State Lighting markets,” said Gene Banucci.

“These are exciting times for Pixelligent and we expect 2018 to be a record year in terms of revenues and commercial wins across all of our core OLED display, OLED lighting, HD Display, and LED lighting markets,” said Bandes.

MagnaChip Semiconductor Corporation(NYSE: MX), a designer and manufacturer of analog and mixed-signal semiconductor products, announced today it now offers a 0.35 micron 700V Ultra-High Voltage process technology (UHV) that reduces mask counts, manufacturing time and cost for power-related AC-DC products. This UHV process technology offers 700V nLDMOS, 700V JFET, and 5.5V CMOS devices that are suitable for manufacturing AC-DC converter ICs and LED driver ICs.

The demand for AC-powered products in home appliances continues to increase, creating the need for highly efficient and cost-competitive AC-DC converter ICs, AC-DC chargers and LED driver ICs.  MagnaChip’s 0.35 micron 700V UHV process technology is a suitable match to manufacture these types of power-related products.

MagnaChip provides various types of UHV technology to meet the diverse demands of the customers. HP35ULB700, the newly developed UHV process, eliminates five photolithography steps through process simplification compared with MagnaChip’s previous generation of UHV technology, making it possible to reduce manufacturing cost and to accelerate the time to market. Among the devices offered in HP35ULB700 are 700V low Ron nLDMOS, 500V nLDMOS, 700V JFET, 5.5V CMOS, BJT, 700V resistor, BP cap, and MIM and fuse. All these devices enable the integrated solution of AC-DC converter ICs and LED driver ICs. The 700V low Ron nLDMOS devices offer improved specific-on-resistance of 150 mohm·cm2. In addition, the devices enable various design schemes, including the possibility to separate or connect the source and the bulk in nLDMOS.

YJ Kim, MagnaChip’s Chief Executive Officer, commented, “Our  0.35 micron 700V UHV technology  provides our foundry customers with a high-performance, highly efficient manufacturing process for AC-DC converter ICs and LED driver ICs for various LED lighting applications.” Mr. Kim added, “To meet the diverse customer requirements, MagnaChip will continue to develop new UHV technologies such as customer-specific UHV processes with additional option devices.”

Veeco Instruments Inc. (Nasdaq: VECO) announced today the completion of a strategic initiative with ALLOS Semiconductors (ALLOS) to demonstrate 200mm GaN-on-Si wafers for Blue/Green micro-LED production. Veeco teamed up with ALLOS to transfer their proprietary epitaxy technology onto the Propel Single-Wafer MOCVD System to enable micro-LED production on existing silicon production lines.

“With the Propel reactor, we have an MOCVD technology that is capable of high yielding GaN Epitaxy that meets all the requirements for processing micro-LED devices in 200 millimeter silicon production lines,” said Burkhard Slischka, CEO of ALLOS Semiconductors. “Within one month we established our technology on Propel and have achieved crack-free, meltback-free wafers with less than 30 micrometers bow, high crystal quality, superior thickness uniformity and wavelength uniformity of less than one nanometer.  Together with Veeco, ALLOS is looking forward to making this technology more widely available to the micro-LED ecosystem.”

Micro-LED display technology consists of <30×30 square micron red, green, blue (RGB) inorganic LEDs that are transferred to the display backplane to form sub-pixels. Direct emission from these high efficiency LEDs offers lower power consumption compared with OLED and LCD while providing superior brightness and contrast for mobile displays, TV and wearables. The manufacturing of micro-LEDs requires high quality, uniform epitaxial wafers to meet the display yield and cost targets.

“In contrast to competing MOCVD platforms, Propel offers leading-edge uniformity and simultaneously achieves excellent film quality as a result of the wide process window afforded by Veeco’s TurboDisc® technology,” said Peo Hansson, Ph.D., Senior Vice President and General Manager of Veeco MOCVD Operations. “Combining Veeco’s leading MOCVD expertise with ALLOS’ GaN-on-Silicon epi-wafer technology enables our customers to develop micro-LEDs cost effectively for new applications in new markets.”

More than a dozen product categories in optoelectronics, sensors and actuators, and discretes semiconductors (O-S-D) are on track to set record-high annual sales this year, according to a new update of IC Insights’ 2017 O-S-D Report—A Market Analysis and Forecast for Optoelectronics, Sensors/Actuators, and Discrete Semiconductors.  Driven by the expansion of the Internet of Things (IoT), increasing levels of intelligent embedded controls, and some inventory replenishment in commodity discretes, the diverse O-S-D marketplace is having a banner year with combined sales across all three semiconductor segments expected to grow 10.5% in 2017 to a record-high $75.0 billion, says the O-S-D Report update.

In 2017, above average sales growth rates are being achieved in all but one major O-S-D product category—lamp devices, which are now expected to be flat in 2017 because of continued price erosion in light-emitting diodes (LEDs) for solid-state lighting applications.  Figure 1 compares annual growth rates in five major O-S-D product categories, based on the updated 2017 sales projection.

Figure 1

Figure 1

For the first time since 2014, all three O-S-D market segments are on pace to see sales growth in 2017. Moreover, 2017 is expected to be the first year since 2011 when all three O-S-D market segments set record-high annual sales volumes, according to IC Insights’ update.

The 2017 double-digit percent increase will be the highest growth rate for combined O-S-D sales since the strong 2010 recovery from the 2009 semiconductor downturn that coincided with the 2008-2009 financial crisis and global economic recession.  Total O-S-D revenues are now forecast to reach a ninth consecutive annual record high level of $80.5 billion in 2018, which will be a 7.4% increase from 2017 sales, says the O-S-D Report update.

After a rare decline of 3.6% in 2016, optoelectronics is recovering this year with sales now projected to grow 8.1% in 2017 to an all-time high of $36.7 billion, thanks to strong double-digit sales increases in CMOS image sensors (+22%), light sensors (+19%), optical-network laser transmitters (+15%), and infrared devices (+14%).

Meanwhile, record-high revenues for sensors and actuators are being fueled by the expansion of IoT and new automated controls in a wide range of systems—including more self-driving features in cars. Sensors/actuator sales are now expected to climb 17.5% in 2017 to $13.9 billion, marking the strongest growth year for this market segment since 2010.  Sales of sensors and actuators made with microelectromechanical systems (MEMS) technology are forecast to rise by 18.5% in 2017 to a record-high $11.6 billion.  The O-S-D Report update shows all-time high sales being reached in 2017 with strong double-digit growth in actuators (+20%), pressure sensor, including MEMS microphone chips (+18%), and acceleration/yaw sensors (+17%).

Even the commodity-filled discretes market is thriving in 2017 with worldwide sales projected to rise 10.3% to $24.1 billion, which will finally surpass the current peak of $23.4 billion set in 2011.  Sales of power transistors, which account for more than half of the discretes market segment, are forecast to grow 9.0% in 2017 to a record-high $14.0 billion, according to the new O-S-D Report update.

“The GaN market promises an imminent growth”, announced Dr. Ana Villamor, Technology & Market Analyst from Yole Développement (Yole). “2015 and 2016 have been undoubtedly exciting years for the GaN power business. We project the explosion of the market with 84% CAGR between 2017 and 2022. The market value will so reach US$ 450 million at the end of the period.” What makes the power GaN technology so promising?

The “More than Moore” market research and strategy consulting company Yole pursued its investigations based on numerous exchanges with power GaN companies and thanks to its participation to leading conferences. Yole announces this month the Power GaN 2017: Epitaxy, Devices, Applications, and Technology Trends report. Things are going on the right way: the power GaN supply chain prepares for production and 2017 has been showing significant investments that confirm the added-value of power GaN technology and its strong potential in numerous applications. The new Power GaN analysis conveys Yole’s understanding of GaN implementation and details the different market segments, the related drivers, metrics and technical roadmaps.

In 2016 the power GaN market reached US$ 12 million: it is still a small market compared to the impressive US$ 30 billion silicon power semiconductor market. However its expected growth in the short term is showing the enormous potential of the power GaN technology based on its suitability for high performance and high frequency solutions.

“LiDAR, wireless power and envelope tracking are high-end low/medium voltage applications, and GaN is the only existing technology able to meet their requirements,” explained Ana Villamor from Yole. “Beginning of the year, Velodyne Lidar opened a ‘megafactory’ to ramp up the latest 3D sensor for LiDAR manufacturing and this October they already announced a fourfold production increase.”
Other major companies, like Apple and Starbucks, started offering wireless charging solutions. Moreover, since 2016, EPC has been working with Taiwan’s JJPlus Corporation to accelerate the wireless charging market’s growth. The power supply segment is still the biggest application for GaN. The data center market is adopting GaN solutions with a phenomenal speed, driving a 114% CAGR for power supplies through to 2022. Existing solutions from Texas Instruments and EPC for data centers, consisting of a DC/DC converter and point of load supply that steps down the voltage from 48 V to 1.2 V in a single chip, will propel the market. AC/DC power adapters for laptops or smartphones can be also implemented with GaN power IC solutions, which further reduces the size and cost of the system.

Therefore the consumer market is expected to grow during coming years and Yole’s analysts envisage two different scenarios, depending on the acceptance in key markets like AC/DC adapters for laptops and cellphones.

GaN needs to hurry to gain adoption in the EV/HEV market because SiC MOSFETs are already replacing silicon IGBTs in the main inverters. However, a future market for the 48 V battery’s DC/DC converter is still possible for GaN due to its high-speed switching capability. Some main players, as Transphorm, have already obtained qualification for automotive, and this would help to finally ramp-up GaN production for EV/HEV.

In parallel, the GaN power devices supply chain is acting to support market growth. Therefore it is close to being settle for the power GaN market and deals during 2017 show confidence that GaN will be a successful market. “First of all, there have been big investments from the main foundries to increase their capacity to handle mass production”, asserted Zhen Zong, Technology & Market Analyst at Yole Développement. And he added: “Navitas just announced the partnership with TSMC and Amkor to ramp production capacity. Moreover, BMW i Ventures has just invested in GaN Systems. The Taiwan’s Ministry of Economic Affairs is also interested in using GaN for clean and green technologies, also in collaboration with GaN Systems.”

GaN manufacturers clearly continue developing new products and provide samples to customers, as is the case with EPC and its wireless charging line. For example, during 2017, Panasonic announced the mass production of its 650 V products and Exagan successfully produced its first high voltage devices on 8-inch wafers. Other players are in the final phase of R&D or qualification for their GaN products to be launched in 2018. In both cases, manufacturers and clients are pushing to use GaN HEMTs in emerging technologies.

Seoul Semiconductor, a developer of LED products and technology recently introduced its Horticultural Series LEDs in COB, mid-power, and high-power packages, making Seoul the only LED manufacturer to provide lighting designers with the complete spectrum of light used for growing plants – spanning the spectrum from ultraviolet (UV-C) to far-red. The new product family also includes Seoul’s SunLike Series natural spectrum LEDs, which produce light that closely matches the spectrum of natural sunlight.

Seoul Semiconductor introduced the new Horticultural Series LEDs at the 2017 Horticultural Lighting Conference in Denver, CO, on October 17. One of the invited speakers for the conference will be Dr. Peter Barber, product marketing manager for Seoul VioSys, on “The Myriad Ways That UV LEDs Will Impact Society Through Horticultural Lighting.”

Delivering a full spectrum of possibilities for horticultural applications
While many conventional LED manufacturers have developed horticultural-optimized LEDs in the visible light spectrum from violet (~390nm) to red (~700nm) wavelengths, the new Horticultural Series LEDs from Seoul Semiconductor extend this spectrum to include multiple ultraviolet bands (UV-A, UV-B & UV-C), as well as into far-red bands (~700nm to 800nm). The extension of this new LED product series beyond the ends of the visible spectrum provides horticultural lighting designers with the capability to develop the widest range of light sources beneficial for growing and propagating different types of vegetables and plants in indoor settings.

Also playing a critical role in the new Horticultural Series LED family is Seoul Semiconductor’s recently-introduced SunLike LED technology, the first LED to closely match the spectrum of natural sunlight, providing a light source more like natural light than conventional “white light” LEDs, providing lighting designers with a wider range of options as they develop horticultural-specific lighting systems.

By extending the spectrum of LEDs to include both ultraviolet and far-red light sources, Seoul Semiconductor provides horticultural lighting designers an entirely new spectrum of possibilities in developing lighting systems for specific plant growth and propagation,” explained Mark McClear, Vice President, Americas, of Seoul Semiconductor. “Our Horticultural Series LEDs include high-power, mid-power and COB devices, enabling the design of a wide range of lighting fixtures – from high-bay and directional lights to rack-mounted fixtures for vertical farming systems – all from a single LED manufacturer.”

SunLike Series Chip-on-Board (COB) LEDs
For lighting fixtures designed to produce light that closely matches the spectrum of natural sunlight, Seoul offers a range of standard COB LED modules ranging from 6W to 25W.

High Power Horticultural Series LEDs include UV, white, and color devices
For high-bay and other lighting fixtures, Seoul’s Horticultural Series LEDs include the following options:
Ultraviolet
UV-C –
Producing dominant wavelength of 275nm, these un-lensed UV LEDs can be used for sterilization.
UV-B – Producing dominant wavelength between 280 – 310nm, these un-lensed UV LEDs are rated at 10mW with a photosynthetic photon flux (PPF) value of 0.25µmols/s.
UV-A – Producing dominant wavelength between 360 – 400nm, these lensed UV LEDs are rated at 636mW with a PPF value of 2.2µmols/s.
Deep Blue – Featuring a dominant wavelength of 449 – 461nm, these deep blue dome-lensed LEDs are rated at 650mW with a PPF of 2.6µmols/s.
Deep Red – With a dominant wavelength of 646 – 665nm, these visible red LEDs are rated at 345mW with a PPF of 2.32µmols/s.
Far-Red – Producing a dominant wavelength of ~730nm (peak), these near-infrared LEDs are rated at 260mW with a PPF of 1.64µmols/s.
White – These high-power white LEDs feature a light output of 168lm with a PPF of 2.4µmols/s.

Mid Power Horticultural Series LEDs include SunLike natural spectrum LEDs & color devices
For vertical rack systems and other close-up lighting fixtures, Seoul’s Horticultural Series LEDs include the following mid-power options in standard 3030 packages:
SunLike 5000K – With a color temperature ranging from 2700K – 5000K, these LEDs produce light that closely matches the spectrum of natural sunlight, and feature a light output of 22.3lm with a PPF of 0.38µmols/s.
Deep Blue – Featuring a dominant wavelength of 449 – 461nm, these blue mid-power LEDs are rated at 155mW with a PPF of 0.62µmols/s.
Deep-Red – With a dominant wavelength of 646 – 665nm, these visible red LEDs have a PPF of 0.43µmols/s, and a light output of 77lm/mW.
Far-Red – Producing a dominant wavelength of ~730nm (peak), these near-infrared mid-power LEDs are rated at 50mW with a PPF of 0.38µmols/s.

The huge increase in computing performance in recent decades has been achieved by squeezing ever more transistors into a tighter space on microchips.

However, this downsizing has also meant packing the wiring within microprocessors ever more tightly together, leading to effects such as signal leakage between components, which can slow down communication between different parts of the chip. This delay, known as the “interconnect bottleneck,” is becoming an increasing problem in high-speed computing systems.

One way to tackle the interconnect bottleneck is to use light rather than wires to communicate between different parts of a microchip. This is no easy task, however, as silicon, the material used to build chips, does not emit light easily, according to Pablo Jarillo-Herrero, an associate professor of physics at MIT.

Now, in a paper published today in the journal Nature Nanotechnology, researchers describe a light emitter and detector that can be integrated into silicon CMOS chips. The paper’s first author is MIT postdoc Ya-Qing Bie, who is joined by Jarillo-Herrero and an interdisciplinary team including Dirk Englund, an associate professor of electrical engineering and computer science at MIT.

The device is built from a semiconductor material called molybdenum ditelluride. This ultrathin semiconductor belongs to an emerging group of materials known as two-dimensional transition-metal dichalcogenides.

Unlike conventional semiconductors, the material can be stacked on top of silicon wafers, Jarillo-Herrero says.

“Researchers have been trying to find materials that are compatible with silicon, in order to bring optoelectronics and optical communication on-chip, but so far this has proven very difficult,” Jarillo-Herrero says. “For example, gallium arsenide is very good for optics, but it cannot be grown on silicon very easily because the two semiconductors are incompatible.”

In contrast, the 2-D molybdenum ditelluride can be mechanically attached to any material, Jarillo-Herrero says.

Another difficulty with integrating other semiconductors with silicon is that the materials typically emit light in the visible range, but light at these wavelengths is simply absorbed by silicon.

Molybdenum ditelluride emits light in the infrared range, which is not absorbed by silicon, meaning it can be used for on-chip communication.

To use the material as a light emitter, the researchers first had to convert it into a P-N junction diode, a device in which one side, the P side, is positively charged, while the other, N side, is negatively charged.

In conventional semiconductors, this is typically done by introducing chemical impurities into the material. With the new class of 2-D materials, however, it can be done by simply applying a voltage across metallic gate electrodes placed side-by-side on top of the material.

“That is a significant breakthrough, because it means we do not need to introduce chemical impurities into the material [to create the diode]. We can do it electrically,” Jarillo-Herrero says.

Once the diode is produced, the researchers run a current through the device, causing it to emit light.

“So by using diodes made of molybdenum ditelluride, we are able to fabricate light-emitting diodes (LEDs) compatible with silicon chips,” Jarillo-Herrero says.

The device can also be switched to operate as a photodetector, by reversing the polarity of the voltage applied to the device. This causes it to stop conducting electricity until a light shines on it, when the current restarts.

In this way, the devices are able to both transmit and receive optical signals.

The device is a proof of concept, and a great deal of work still needs to be done before the technology can be developed into a commercial product, Jarillo-Herrero says.

The researchers are now investigating other materials that could be used for on-chip optical communication.

Most telecommunication systems, for example, operate using light with a wavelength of 1.3 or 1.5 micrometers, Jarillo-Herrero says.

However, molybdenum ditelluride emits light at 1.1 micrometers. This makes it suitable for use in the silicon chips found in computers, but unsuitable for telecommunications systems.

“It would be highly desirable if we could develop a similar material, which could emit and detect light at 1.3 or 1.5 micrometers in wavelength, where telecommunication through optical fiber operates,” he says.

To this end, the researchers are exploring another ultrathin material called black phosphorus, which can be tuned to emit light at different wavelengths by altering the number of layers used. They hope to develop devices with the necessary number of layers to allow them to emit light at the two wavelengths while remaining compatible with silicon.

“The hope is that if we are able to communicate on-chip via optical signals instead of electronic signals, we will be able to do so more quickly, and while consuming less power,” Jarillo-Herrero says.

An interdisciplinary team of scientists at the U.S. Naval Research Laboratory (NRL) has uncovered a direct link between sample quality and the degree of valley polarization in monolayer transition metal dichalcogenides (TMDs). In contrast with graphene, many monolayer TMDs are semiconductors and show promise for future applications in electronic and optoelectronic technologies.

In this sense, a ‘valley’ refers to the region in an electronic band structure where both electrons and holes are localized, and ‘valley polarization’ refers to the ratio of valley populations — an important metric applied in valleytronics research.

Upper Panel: schematic of optical excitation in the K valley of WS2 monolayers. Lower Panel: Photoluminescence (PL) intensity map of a triangular monolayer island of WS2 and the associated valley polarization map demonstrate the clear inverse relationship. Each map covers a 46 x 43 micron area. The regions exhibiting smallest PL intensity and lowest quality are found at the center of the flake and radiate outward toward the three corners. These regions correspond to the highest valley polarization. Credit: US Naval Research Laboratory

Upper Panel: schematic of optical excitation in the K valley of WS2 monolayers. Lower Panel: Photoluminescence (PL) intensity map of a triangular monolayer island of WS2 and the associated valley polarization map demonstrate the clear inverse relationship. Each map covers a 46 x 43 micron area. The regions exhibiting smallest PL intensity and lowest quality are found at the center of the flake and radiate outward toward the three corners. These regions correspond to the highest valley polarization. Credit: US Naval Research Laboratory

“A high degree of valley polarization has been theoretically predicted in TMDs yet experimental values are often low and vary widely,” said Kathleen McCreary, Ph.D., lead author of the study. “It is extremely important to determine the origin of these variations in order to further our basic understanding of TMDs as well as advance the field of valleytronics.”

Many of today’s technologies (i.e. solid state lighting, transistors in computer chips, and batteries in cell phones) rely simply on the charge of the electron and how it moves through the material. However, in certain materials such as the monolayer TMDs, electrons can be selectively placed into a chosen electronic valley using optical excitation.

“The development of TMD materials and hybrid 2D/3D heterostructures promises enhanced functionality relevant to future Department of Defense missions,” said Berend Jonker, Ph.D., principal investigator of the program. “These include ultra-low power electronics, non-volatile optical memory, and quantum computation applications in information processing and sensing.”

The growing fields of spintronics and valleytronics aim to use the spin or valley population, rather than only charge, to store information and perform logic operations. Progress in these developing fields has attracted the attention of industry leaders, and has already resulted in products such as magnetic random access memory that improve upon the existing charge-based technologies.

The team focused on TMD monolayers such as WS2 and WSe2, which have high optical responsivity, and found that samples exhibiting low photoluminescence (PL) intensity exhibited a high degree of valley polarization. These findings suggest a means to engineer valley polarization via controlled introduction of defects and nonradiative recombination sites

“Truly understanding the reason for sample-to-sample variation is the first step towards valleytronic control,” McCreary said. “In the near future, we may be able to accurately increase polarization by adding defect sites or reduce polarization by passivation of defects.”

Results of this research are reported in the August 2017 edition of the American Chemical Society’s Nano, The research team is comprised of Dr. Kathleen McCreary, Dr. Aubrey Hanbicki, and Dr. Berend Jonker from the NRL Materials Science and Technology Division; Dr. Marc Currie from the NRL Optical Sciences Division; and Dr. Hsun-Jen Chuang who holds an American Society for Engineering Education (ASEE) fellowship at NRL.