Category Archives: LED Manufacturing

SUSS MicroTec, a global supplier of equipment and process solutions for the semiconductor industry and related markets, and the Singh Center for Nanotechnology at the University of Pennsylvania (Penn) are announcing a cooperation agreement in the field of nanoimprint technologies. As part of this cooperation, Penn has recently received the equipment set and the technology know-how for Substrate Conformal Imprint Lithography (SCIL), that will expand the capabilities of the recently installed MA/BA6 Gen3 Mask Aligner from SUSS MicroTec at Penn.

Substrate Conformal Imprint Lithography (SCIL) is a nanoimprint technique combining the advantages of both soft and rigid stamps, allowing large-area patterning and sub-50nm resolution to be achieved at the same time. SCIL is applied in diverse fields, ranging from HB LEDs, Photovoltaics, MEMS, NEMS and mass production of optical gratings for gas sensing and telecommunications.

The Singh Center for Nanotechnology will implement SCIL for use in plasmonic devices, semiconductor nanowires, flexible nanocrystal electronics, biodegradable sensors and MEMS batteries.  In addition, Lithography Manager Dr. Gerald Lopez will lead the Center’s efforts in qualifying new nanoimprint materials and related process technology development in close cooperation with SUSS MicroTec.

As a further important part of the cooperation, SUSS MicroTec`s customers will gain direct access to the cleanroom facilities and the equipment set installed at Penn, serving as a demonstration center for North American customers. The experience and high technology level of Penn allows the customer to see the entire process flow, the imprinting process itself and the subsequent steps up to a finished device.

“We are pleased to collaborate with SUSS MicroTec for developing applications with SCIL. By combining our strengths in micro- and nanofabrication, we are able to provide superior nanoimprint capabilities to our researchers,” stated Professor Mark Allen, Scientific Director of the Singh Center for Nanotechnology and Alfred Fitler Moore, Professor of Electrical and Systems Engineering. “This industrial partnership enhances our ability to demonstrate how nanoimprint technology serves as a catalyst in research and its translation into the commercial sector.”

“We are very happy about the cooperation with the Singh Center for Nanotechnology. Their work will contribute strongly to further commercialize this large area nano-patterning technique in order to accelerate the adoption for volume production. In addition, our customers do not just benefit from the possibility to use Penn’s facilities and get insights to the entire imprinting process, but also from Penn´s knowledge, by having an experienced partner at hand”, says Ralph Zoberbier, General Manager Exposure and Laser Processing of SUSS MicroTec.“

Nano-electronics research center imec announced today that it is extending its Gallium Nitride-on-Silicon (GaN-on-Si) R&D program, and is now offering joint research on GaN-on-Si 200mm epitaxy and enhancement mode device technology. The extended R&D initiative includes exploration of novel substrates to improve the quality of the epitaxial layers, new isolation modules to increase the level of integration, and the development of advanced vertical devices. Imec welcomes new partners interested in next generation GaN technologies and companies looking for low-volume manufacturing of GaN-on-Si devices to enable the next generation of more efficient and compact power converters.

next gen GaN imec

GaN technology offers faster switching power devices with higher breakdown voltage and lower on-resistance than silicon, making it an outstanding material for advanced power electronic components. Imec’s R&D program on GaN-on-Si was launched to develop a GaN-on-Si process and bring GaN technology towards industrialization. Building on imec’s excellent track record in GaN epi-layer growth, new device concepts and CMOS device integration, imec has now developed a complete 200mm CMOS-compatible GaN process line. Imec’s GaN-on-Si technology is reaching maturity, and companies can gain access to the platform by joining imec’s GaN-on-Si industrial affiliation program (IIAP). The process line is also open to fabless companies interested in low-volume production of GaN-on-Si devices tailored to their specific needs, through dedicated development projects.

Imec’s portfolio includes three types of buffers optimized for breakdown voltage and low traps-related phenomena (i.e. current dispersion): a step graded AlGaN buffer, a super lattice buffer, and a buffer with low-temperature AlN interlayers. Imec explored side-by-side enhancement mode power devices of the MISHEMT and p-GaN HEMT type, as well as a gate-edge terminated Schottky power diode featuring low reverse leakage and low turn-on voltage.

The latest generation of imec enhancement mode power devices shows a threshold voltage beyond +2V, an on-resistance below 10 ohm mm and output current beyond 450 mA/mm. These devices represents the state of the art of enhancement mode power devices.

In this next phase of the GaN program, imec is focusing on further improving the performance and reliability of its current power devices, while in parallel pushing the boundaries of the technology through innovation in substrate technology, higher levels of integration and exploration of novel device architectures.

“Since the program’s launch in July 2009, we have benefited from strong industry engagement, including participation from IDMs, epi-vendors and equipment and material suppliers. This underscores the industrial relevance of our offering,” stated Rudi Cartuyvels, executive vice president of smart systems at imec. “Interested companies are invited to become a partner and actively participate in our program. Imec’s open innovation model allows companies to have early access to next-generation devices and power electronics processes, equipment and technologies and speed up innovation at shared cost.”

Recently, quantum dots (QDs)–nano-sized semiconductor particles that produce bright, sharp, color light–have moved from the research lab into commercial products like high-end TVs, e-readers, laptops, and even some LED lighting. However, QDs are expensive to make so there’s a push to improve their performance and efficiency, while lowering their fabrication costs.

Researchers from the University of Illinois at Urbana-Champaign have produced some promising results toward that goal, developing a new method to extract more efficient and polarized light from quantum dots (QDs) over a large-scale area. Their method, which combines QD and photonic crystal technology, could lead to brighter and more efficient mobile phone, tablet, and computer displays, as well as enhanced LED lighting.

To demonstrate their new technology, researchers fabricated a novel 1mm device (aka Robot Man) made of yellow photonic-crystal-enhanced QDs. Every region of the device has thousands of quantum dots, each measuring about six nanometers. Credit:  Gloria See, University of Illinois at Urbana-Champaign

To demonstrate their new technology, researchers fabricated a novel 1mm device (aka Robot Man) made of yellow photonic-crystal-enhanced QDs. Every region of the device has thousands of quantum dots, each measuring about six nanometers. Credit: Gloria See, University of Illinois at Urbana-Champaign

With funding from the Dow Chemical Company, the research team, led by Electrical & Computer Engineering (ECE) Professor Brian Cunningham, Chemistry Professor Ralph Nuzzo, and Mechanical Science & Engineering Professor Andrew Alleyne, embedded QDs in novel polymer materials that retain strong quantum efficiency. They then used electrohydrodynamic jet (e-jet) printing technology to precisely print the QD-embedded polymers onto photonic crystal structures. This precision eliminates wasted QDs, which are expensive to make.

These photonic crystals limit the direction that the QD-generated light is emitted, meaning they produce polarized light, which is more intense than normal QD light output.

According to Gloria See, an ECE graduate student and lead author of the research reported this week in Applied Physics Letters, their replica molded photonic crystals could someday lead to brighter, less expensive, and more efficient displays. “Since screens consume large amounts of energy in devices like laptops, phones, and tablets, our approach could have a huge impact on energy consumption and battery life,” she noted.

“If you start with polarized light, then you double your optical efficiency,” See explained. “If you put the photonic-crystal-enhanced quantum dot into a device like a phone or computer, then the battery will last much longer because the display would only draw half as much power as conventional displays.”

To demonstrate the technology, See fabricated a novel 1mm device (aka Robot Man) made of yellow photonic-crystal-enhanced QDs. The device is made of thousands of quantum dots, each measuring about six nanometers.

“We made a tiny device, but the process can easily be scaled up to large flexible plastic sheets,” See said. “We make one expensive ‘master’ molding template that must be designed very precisely, but we can use the template to produce thousands of replicas very quickly and cheaply.”

Pixelligent Technologies, a manufacturer of high index materials for demanding optoelectronics applications, announces the addition of four new OLED lighting products to its PixClear Zirconia nanocrystal family. These new products will deliver light extraction and efficiency for a wide variety of OLED lighting applications.

“Our new family of high index products for OLED lighting expands upon Pixelligent’s leadership position in the solid state lighting market, and we believe it will help accelerate the adoption of OLED lighting,” said Craig Bandes, President and CEO of Pixelligent.

The new PixClear for OLED products can be incorporated into OLED lighting panels as an internal light extraction and smoothing layer, delivering more than twice the amount of light currently extracted in OLED lighting devices. The product line includes two solvent-based and two formulated materials, available both as samples and at commercial scale.

“The OLED lighting market is ripe for accelerated growth and broad-user adoption and Pixelligent is delivering the functionality required to help OLED lighting manufacturers deliver substantially more lumens-per-watt,” added Bandes.

Sapphire is the key material for LED manufacturing. But in 2015, 20 percent of sapphire will be used in Apple’s iPhone, for the camera lens, fingerprint readers and heart rate monitors covers, and the Apple watch’s window. The new Yole Développement (Yole) report on Sapphire Applications & Market 2015: from LED to Consumer Electronic provides a complete update of all sapphire uses, from LED substrates to consumer applications.

Today, the sapphire industry looks very different, depending on your perspective. The market for sapphire wafers for LED manufacturing is depressed. Wafer prices often fall below manufacturing cost. There is excess capacity that will be able to supply the needs of the industry through to at least the end of the decade. Consequently, companies are shutting down one after the other.

By contrast, the use of sapphire is booming for non-LED applications, driven by Apple’s choice of this material to protect various sensors, and this may be just the beginning. The company decided not to use sapphire for the iPhone 6 family’s display covers, a decision that led to the bankruptcy of GTAT. But now there are signs in the industry that the mobile phone maker is again looking at sapphire as the solution for display covers. Multiple companies are apparently attempting to position themselves in the potential future supply chain. The moves include Lens Technology investing US$532 million investment in a new Chinese sapphire facility, a US$98 million injection in GTAT, the plans of Biel’s joint venture with Roshow for a huge expansion in Inner Mongolia, and several other initiatives.

sapphire companies

Click to view full size.

There were many reasons for Apple’s 2014 decision not to use sapphire in display covers, but they can be summarized as “too fast, too much, too soon.” The project was ambitious in its timeframe and targeted outputs, but many of the necessary processes and technologies in crystal growth and finishing were still at an early stage of development. Yet the venture still set the stage for the future. The partners have developed unrivalled expertise in working with sapphire in a high-volume, cost-controlled environment. A lot was also learned in manufacturing of the complex 3D-shaped Apple Watch cover. But the question remains: why use sapphire?

At more than five times the cost of glass, benefits in term of breakages are still far from obvious and its high reflectivity washes out displays. Sapphire won’t sell for a premium and increase Apple’s market share just on glamour and cachet. If the company eventually adopts sapphire, it means that it would have either demonstrated that it can improve breakage resistance compared to glass and/or developed entirely new functionalities enabled by some unique properties of sapphire.

To exist and thrive, the display cover market needs Apple to take the lead and to succeed. Otherwise, only Huawei seems in a position to propel this market, but not at the same level. And alternative technologies are emerging. Various phone manufacturers recently adopted alumina-coated glass display covers to provide superior scratch resistance. Sapphire Applications & Market 2015: from LED to Consumer Electronic report from Yole presents and analyzes the recent trends in this market, including cost structures, investments and alternative technologies.

In 2015, LEDs still consume 76 percent of the sapphire supply, but oversupply is affecting revenue and profitability. Capacity has increased non-stop since 2009, despite prices being at or below cost for most suppliers since late 2011. The market is oversupplied two or threefold, depending on product category. But the situation is complex. Tier one vendors often operate at high utilization rates and keep increasing capacity. Tier two companies operate at low utilization rates or not at all.

Companies such as BIEMT or Sumitomo Metal Mining recently disappeared or exited the business. The big winners in 2014 were Monocrystal, Aurora, Namiki, Rigidtech and Crystalwise, which all managed to increase volumes and revenue. Global revenue from sapphire cores, bricks and wafers reached US$1.1 billion. Adding finished components produced by Biel, Lens Technology, Crystal Optech and others, revenue reached US$1.8 billion, including the notable performance of Saifei, which supplied the Kyocera Brigadier’s sapphire display cover.

Under strong price pressure, the sapphire industry successfully reduced its costs – but prices are falling even faster. An 18 percent average selling price decrease in 2015 wiped out potential gains from a 16 percent volume increase in LED wafer shipments. “We expect prices to keep decreasing, resulting in an LED wafer market remaining essentially flat in revenue despite a 5.2 percent CAGR growth in volume expected through to 2020,” said Eric Virey, Senior, Technology & Market Analyst at Yole. Optical wafers may also struggle if Yole’s scenario of Apple phasing out its current sapphire fingerprint reader technology for an “In Display” fingerprint sensor materializes in 2018.

Researchers have developed an ultrafast light-emitting device that can flip on and off 90 billion times a second and could form the basis of optical computing.

At its most basic level, your smart phone’s battery is powering billions of transistors using electrons to flip on and off billions of times per second. But if microchips could use photons instead of electrons to process and transmit data, computers could operate even faster.

But first engineers must build a light source that can be turned on and off that rapidly. While lasers can fit this requirement, they are too energy-hungry and unwieldy to integrate into computer chips.

Duke University researchers are now one step closer to such a light source. In a new study, a team from the Pratt School of Engineering pushed semiconductor quantum dots to emit light at more than 90 billion gigahertz. This so-called plasmonic device could one day be used in optical computing chips or for optical communication between traditional electronic microchips.

The study was published online on July 27 in Nature Communications.

“This is something that the scientific community has wanted to do for a long time,” said Maiken Mikkelsen, an assistant professor of electrical and computer engineering and physics at Duke. “We can now start to think about making fast-switching devices based on this research, so there’s a lot of excitement about this demonstration.”

The new speed record was set using plasmonics. When a laser shines on the surface of a silver cube just 75 nanometers wide, the free electrons on its surface begin to oscillate together in a wave. These oscillations create their own light, which reacts again with the free electrons. Energy trapped on the surface of the nanocube in this fashion is called a plasmon.

The plasmon creates an intense electromagnetic field between the silver nanocube and a thin sheet of gold placed a mere 20 atoms away. This field interacts with quantum dots — spheres of semiconducting material just six nanometers wide — that are sandwiched in between the nanocube and the gold. The quantum dots, in turn, produce a directional, efficient emission of photons that can be turned on and off at more than 90 gigahertz.

“There is great interest in replacing lasers with LEDs for short-distance optical communication, but these ideas have always been limited by the slow emission rate of fluorescent materials, lack of efficiency and inability to direct the photons,” said Gleb Akselrod, a postdoctoral research in Mikkelsen’s laboratory. “Now we have made an important step towards solving these problems.”

“The eventual goal is to integrate our technology into a device that can be excited either optically or electrically,” said Thang Hoang, also a postdoctoral researcher in Mikkelsen’s laboratory. “That’s something that I think everyone, including funding agencies, is pushing pretty hard for.”

The group is now working to use the plasmonic structure to create a single photon source — a necessity for extremely secure quantum communications — by sandwiching a single quantum dot in the gap between the silver nanocube and gold foil. They are also trying to precisely place and orient the quantum dots to create the fastest fluorescence rates possible.

Aside from its potential technological impacts, the research demonstrates that well-known materials need not be limited by their intrinsic properties.

“By tailoring the environment around a material, like we’ve done here with semiconductors, we can create new designer materials with almost any optical properties we desire,” said Mikkelsen. “And that’s an emerging area that’s fascinating to think about.”

Scientists studying thin layers of phosphorus have found surprising properties that could open the door to ultrathin and ultralight solar cells and LEDs.

The team used sticky tape to create single-atom thick layers, termed phosphorene, in the same simple way as the Nobel-prize winning discovery of graphene.

Unlike graphene, phosphorene is a semiconductor, like silicon, which is the basis of current electronics technology.

“Because phosphorene is so thin and light, it creates possibilities for making lots of interesting devices, such as LEDs or solar cells,” said lead researcher Dr Yuerui (Larry) Lu, from The Australian National University (ANU).

“It shows very promising light emission properties.”

The team created phosphorene by repeatedly using sticky tape to peel thinner and thinner layers of crystals from the black crystalline form of phosphorus.

As well as creating much thinner and lighter semiconductors than silicon, phosphorene has light emission properties that vary widely with the thickness of the layers, which enables much more flexibility for manufacturing.

“This property has never been reported before in any other material,” said Dr Lu, from ANU College of Engineering and Computer Science, whose study is published in the Nature serial journal Light: Science and Applications.

“By changing the number of layers we can tightly control the band gap, which determines the material’s properties, such as the colour of LED it would make.

“You can see quite clearly under the microscope the different colours of the sample, which tells you how many layers are there,” said Dr Lu.

Dr Lu’s team found the optical gap for monolayer phosphorene was 1.75 electron volts, corresponding to red light of a wavelength of 700 nanometers. As more layers were added, the optical gap decreased. For instance, for five layers, the optical gap value was 0.8 electron volts, a infrared wavelength of 1550 nanometres. For very thick layers, the value was around 0.3 electron volts, a mid-infrared wavelength of around 3.5 microns.

The behaviour of phosphorene in thin layers is superior to silicon, said Dr Lu.

“Phosphorene’s surface states are minimised, unlike silicon, whose surface states are serious and prevent it being used in such a thin state.”

Researchers at Chalmers University of Technology have developed a method for efficiently cooling electronics using graphene-based film. The film has a thermal conductivity capacity that is four times that of copper. Moreover, the graphene film is attachable to electronic components made of silicon, which favors the film’s performance compared to typical graphene characteristics shown in previous, similar experiments.

Electronic systems available today accumulate a great deal of heat, mostly due to the ever-increasing demand on functionality. Getting rid of excess heat in efficient ways is imperative to prolonging electronic lifespan, and would also lead to a considerable reduction in energy usage. According to an American study, approximately half the energy required to run computer servers, is used for cooling purposes alone.

A couple of years ago, a research team led by Johan Liu, professor at Chalmers University of Technology, were the first to show that graphene can have a cooling effect on silicon-based electronics. That was the starting point for researchers conducting research on the cooling of silicon-based electronics using graphene.

“But the methods that have been in place so far have presented the researchers with problems,” Johan Liu said. “It has become evident that those methods cannot be used to rid electronic devices off great amounts of heat, because they have consisted only of a few layers of thermal conductive atoms. When you try to add more layers of graphene, another problem arises, a problem with adhesiveness. After having increased the amount of layers, the graphene no longer will adhere to the surface, since the adhesion is held together only by weak van der Waals bonds.”

“We have now solved this problem by managing to create strong covalent bonds between the graphene film and the surface, which is an electronic component made of silicon,” he continues.

The stronger bonds result from so-called functionalization of the graphene, i.e. the addition of a property-altering molecule. Having tested several different additives, the Chalmers researchers concluded that an addition of (3-Aminopropyl) triethoxysilane (APTES) molecules has the most desired effect. When heated and put through hydrolysis, it creates so-called silane bonds between the graphene and the electronic component.

Moreover, functionalization using silane coupling doubles the thermal conductivity of the graphene. The researchers have shown that the in-plane thermal conductivity of the graphene-based film, with 20 micrometer thickness, can reach a thermal conductivity value of 1600 W/mK, which is four times that of copper.

“Increased thermal capacity could lead to several new applications for graphene,” says Johan Liu. “One example is the integration of graphene-based film into microelectronic devices and systems, such as highly efficient Light Emitting Diodes (LEDs), lasers and radio frequency components for cooling purposes. Graphene-based film could also pave the way for faster, smaller, more energy efficient, sustainable high power electronics.”

EV Group (EVG), a supplier of wafer bonding and lithography equipment for the MEMS, nanotechnology and semiconductor markets, today unveiled the HERCULES NIL—a fully integrated track system that combines cleaning, resist coating and baking pre-processing steps with EVG’s SmartNIL large-area nanoimprint lithography (NIL) process in a single platform. Offering industry-leading productivity and throughput, the HERCULES NIL provides a complete, dedicated UV-NIL solution that is ideally suited for high-volume manufacturing (HVM) of emerging photonic devices. It does so by imprinting structures in sizes ranging from tens of nanometers up to several micrometers that alter or improve the optical response of surfaces and devices, such as anti-reflective layers, color and polarizer filters, light guiding plates, patterned sapphire substrates used in manufacturing light emitting diodes (LEDs), and many others. Other rapidly emerging applications for NIL include MEMS, NEMS, biological and nano-electronic applications.

“The HERCULES NIL demonstrates EVG’s ‘Triple i’ philosophy of ‘invent-innovate-implement’ at work,” stated Paul Lindner, executive technology director at EV Group. “EVG has been an early pioneer in the development of NIL equipment. After more than a decade of research and continuous improvements, EVG has now propelled NIL technology to a level of maturity that enables significant advantages for certain applications compared to traditional optical lithography. In addition, the Hercules NIL allows a wider array of applications, particularly in the fields of photonics and biotechnology, to finally leverage the cost-of-ownership and resolution benefits of NIL in volume production.”

The HERCULES NIL combines EVG’s expertise in NIL, resist processing and HVM solutions into a single integrated system that offers unmatched throughput (40 wph for 200-mm wafers). The system is built on a highly configurable and modular platform that accommodates a variety of imprint materials and structure sizes—giving customers greater flexibility in addressing their manufacturing needs. The fully integrated approach also minimizes the risk of particle contamination.

Key product attributes include:

  • Fully automated UV-NIL imprinting and low-force detachment
  • Processing substrates up to 200mm in diameter
  • Full-area imprint coverage, which avoids pattern stitching errors associated with step-and-repeat lithography systems due to limited field size
  • Volume manufacturing of structures down to 40nm and smaller
  • Highest coating uniformity of +/- 1 percent, which results in minimal residual layer thickness and variation for processed structures over the entire wafer
  • Supports a wide range of structure sizes and shapes, including 3-D
  • Can be used on high-topography (rough) surfaces
  • Ability to fabricate multiple-use soft stamps to extend the lifetime of master imprint templates

EVG’s new HERCULES NIL system is available now. Systems have already been installed and are being used for high-volume manufacturing at production sites of leading photonic device manufacturers.

Global semiconductor capital equipment manufacturer OEM Group announced today it has received first-in-fab and repeat tool orders for its Cintillio wet chemical processing system from several leading Ultra Bright LED manufacturers working in the automotive lighting market.  With these orders, OEM Group has now successfully expanded its production proven and patented ECO-Process wafer surface preparation solutions from the established markets of Power Device, CMOS IC, and MEMS manufacturing into UBLED fabrication, a new market for Cintillio.  The tools will be used for ozone processing of some of the most sensitive layers exposed during LED manufacturing, including exposed silver, which to date has presented LED makers with difficult challenges where surface preparation is involved.

Along with novel ozone processes optimized for exposed Ag, OEM Group’s ECO-Processes provide LED customers with significant reductions in chemical waste disposal and DI water consumption.

LEDs are eco-friendly light sources that provide high power efficiency in automotive applications, contributing to improved fuel efficiency by reducing electrical power consumption. As a result, the EU has officially recognized LED headlamps as being an energy-efficient technology, resulting in the notable adoption of UBLED headlamps by European automobile manufacturers.

The market research firm LEDInside expects continued significant growth in the automotive LED segment, particularly in Daytime Running Lights, High/Low headlamp beams, and fog light applications, with a compound annual growth rate of 48% forecast from 2014 to 2018.

And McKinsey & Company notes in a recent report that LED adoption can be accelerated by applying best practices in manufacturing, including increased automation levels and “lean” manufacturing methods, as OEM Group now offers for the LED market with Cintillio.  The repeat and first-in-fab orders from major UBLED manufacturers in Asia and Europe reflect the confidence OEM Group’s customers have in these surface preparation processes and reinforces the value proposition benefits they bring.

“It is a testament to the development work on ozone processing over sensitive layers, such as Ag, carried out by our process development group based in Coopersburg, PA, that we are seeing traction and growth in the UBLED market. This work has enabled us to provide process solutions not only for UBLED FEOL applications, but also throughout the entire UBLED process flow,” said Paul Inman, Business Development, Chemical Process Technology, OEM Group.

“The ability to reduce DI water consumption by up to 85%, and the virtual elimination of chemistry and related disposal costs, are factors leading to a marked increase in interest in the ECO-Processes, especially in areas suffering severe water shortages” added Graham Pye, CPT Product Manager at OEM Group.