Category Archives: LED Manufacturing

As high data rate applications put more strain on LTE wireless networks, innovative solutions such as small cell base stations (BTS) and carrier aggregation will be needed to bridge the bandwidth gap in high traffic areas. In response to broader bandwidth demand, Cree, Inc. introduces a family of GaN HEMT RF transistors that delivers industry-leading bandwidth and high efficiency performance to support today’s busy LTE networks. Built on plastic dual-flat no-leads (DFN) surface mount packages, the new Cree GaN HEMT RF transistors also provide the affordability needed to replace less efficient Si or GaAs transistors in these applications.

“The trend of ever-increasing amounts of data-rich applications will drive the need for small cell deployment to improve wireless network performance,” said Tom Dekker, director of sales and marketing, RF Business Unit, Cree, Inc. “Our industry-leading GaN technology will provide the desired bandwidth, flexibility, efficiency and affordability our small cell customers demand.”

The new GaN HEMT DFN product family includes 28V and 50V, 15W and 30W unmatched transistors. The frequency-agile transistors are capable of operating at a range between 700 MHz to 3.8 GHz instantaneous, and may be optimized for band splits. Multi-band capability creates design flexibility that helps small cell OEMs speed their time to market and allows operators to reconfigure the same small cell unit for different market requirements.

In high efficiency applications, Cree GaN HEMT RF transistors help reduce the size and weight of LTE cellular network transmitters and simplify thermal management. These efficiency gains generate significant energy savings in operational costs. Cree developed Doherty reference design CDPA27045 utilizing 15W and 30W HEMT DFN transistors to demonstrate the technology’s superior efficiency. The design delivers approximately 50 percent drain efficiency at 10W average power under a LTE 7.5dB peak-to-average ratio signal, and covers 2.5-2.7 GHz instantaneous RF bandwidth while offering 16dB of linear gain.

The new family of GaN HEMT DFN RF transistors is based on Cree’s qualified 50V, 0.4µm gate length process.

Veeco Instruments Inc. (Nasdaq:VECO) has appointed Shubham Maheshwari, 42, as its new Executive Vice President, Finance and Chief Financial Officer (CFO). Mr. Maheshwari replaces David D. Glass, who announced his retirement from Veeco last December.

Mr. Maheshwari brings more than 20 years of experience in engineering and finance to Veeco. He most recently served as Chief Financial Officer of OnCore, a global manufacturer of electronic products in the medical, aerospace, defense and industrial markets. Prior to this role, he held various finance roles including Senior Vice President Finance, Treasury, Tax and Investor Relations at Spansion, a global leader in Flash memory based embedded system solutions. Mr. Maheshwari helped lead Spansion’s emergence from bankruptcy to become a successful public company. Prior to Spansion, he spent over ten years at KLA-Tencor, a global semiconductor capital equipment manufacturing company, in various senior level corporate development and finance roles, including Vice President of Corporate Development and Corporate Controller. During his tenure at KLA-Tencor, he worked on over $1 billion in acquisition transactions.

He holds a B.S. in Chemical Engineering from the Indian Institute of Technology in Delhi, India, an M.S. in Chemical Engineering from Kansas State University, and an MBA from the Wharton Business School, University of Pennsylvania.

John Peeler, Veeco’s Chairman and Chief Executive Officer, commented, “Shubham brings an ideal mix of highly relevant financial leadership experience to Veeco. I am confident he will hit the ground running to help take Veeco to the next level of performance. I’m extremely pleased that Shubham has joined our leadership team.”

“Veeco is a great match for me and I’m excited to come on board,” commented Mr. Maheshwari. “Veeco has done an impressive job managing through an extended downturn, but I think the best is still in front of the Company. I look forward to helping to strengthen the business and capitalizing on the significant growth opportunities ahead.”

GaN-on-Si is entering in production. Under this context, what is the patent situation? KnowMade and Yole Développement decided to collaborate and combine their expertise to perform a patent analysis dedicated to the GaN-on-Si substrate market: GaN on Silicon Substrate Patent Investigation.
Under this report, the companies detail the technological challenges and known solutions. They provide an overview of the main players and up to 2020 market volume & revenue forecasts. Analysts give a deep understanding of the IP landscape and identify key patents per technology issues or patent assignee.

“GaN-on-Si technology appeared naturally as an alternative to GaN- on-Sapphire, the main stream technology for LED applications. Today, despite potential cost benefits, the mass adoption of GaN-on-Si technology for LED applications remains unclear,” explains Dr Hong Lin, Technology & Market Analyst, Compound Semiconductors & Power Electronics at Yole Développement.

Most major LED makers have a patenting activity related to GaN-on-Si technology, but so far, few have made it the core of their strategy and technology roadmap. Contrary to the LED industry, Yole Développement and KnowMade expect GaN-on-Si to be widely adopted by power electronics and RF applications because of its lower cost and CMOS compatibility.

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The growth of GaN-on-silicon substrate was first reported in the early-1970s (T. L. Chu et al., J. Electrochemical Society, Vol. 118, page 1200), since the early 1990s more and more academics and industrials have been involved in developing this technology. GaN-on-Si technology is now poised for a list of technical challenges. The high lattice mismatch between GaN and Si results in a high defect density in epitaxial layers (dislocations). The high thermal expansion coefficient (TCE) mismatch between GaN and Si leads to a large tensile stress during cooling from the growth temperature to room temperature. The tensile stress causes film cracking and a concave bending of the wafer (warpage). These factors combine to make both dislocation density and crack/warpage reduction a challenging task.

Under GaN-On Si Substrate Patent Investigation report, Yole Développement and KnowMade cover patents published worldwide up to December, 2013.

“The patents addressing the above mentioned challenges have been selected, and an in-depth analysis of patent holders and corresponding patented technologies is provided. This report does not include patents related to active layers or GaN-based devices,” explains Dr Nicolas Baron, CEO & Co-founder, KnowMade.

Fundamental patents describing a gallium-nitride-based compound semiconductor grown on a silicon substrate were filed before the 1990s with the most significant assigned to TDK and Fujitsu. In the early 1990s, Toyoda Gosei and the University of Nagoya filed the first concepts of a buffer layer for improving the crystallinity of GaN. Those fundamental patents have been followed by an ever increasing number of applications since 1995 as more companies competed in GaN-on-Si technology to meet the technological challenges, the market demand and to lower manufacturing costs. Currently, the patented technologies reflect the significant improvements that have been made on key material issues such as dislocation density reduction and stress management for preventing cracks and warpage of the wafer.

According to Yole Développement & KnowMade analysis, GaN-on-Si IP is mature enough to initiate mass production.

Intermolecular, Inc. today announced that Epistar Corp. and Intermolecular have signed a multi-year extension of their existing collaborative development program (CDP) and royalty-bearing IP licensing agreement to increase the efficiency and reduce the cost of Epistar’s light emitting diode (LED) devices.

Under the terms of the agreement, which was initially established in April 2013, Epistar and Intermolecular engineers will continue to work together to leverage Intermolecular’s High Productivity Combinatorial (HPC) technology platform to dramatically accelerate development and manufacturing qualification of novel materials and processes for advanced LED products.

“Epistar is leveraging Intermolecular’s HPC methodology and technology in order to accelerate R&D experimentation as we bring more advanced, higher-performing LED devices to market for our customers,” stated Carson Hsieh, vice president of R&D at Epistar. “Our CDP with Intermolecular helped to significantly increase the performance of one of our LED products during development, and we are now in the process of implementing that technology in production. In the coming years we expect our continuing relationship with Intermolecular to support further advancements in our technology roadmap.”

“Increasing LED efficiency is the key to reducing LED system cost and enabling widespread adoption of more innovative lighting products. We are pleased to enter into this multi-year agreement extension with Epistar—a leader in LED manufacturing—to support their product innovation strategy through accelerated materials development and LED device integration,” stated Sandeep Nijhawan, senior vice president and general manager, Clean Energy Group at Intermolecular.

Intermolecular’s mission is to improve R&D efficiency in the semiconductor and clean energy industries through collaborations that use its HPC platform, which allows R&D experimentation to be performed at speeds up to 100 times faster than traditional methods.

Dow Corning filed a complaint through its Chinese subsidiary and licensee with the Shanghai First Intermediate Court. The complaint alleges that Beijing KMT Technology Co., Ltd infringed Dow Corning’s Chinese patent by manufacturing and selling products using proprietary Dow Corning silicone technology under the Beijing KMT label.

The patent is part of Dow Corning’s diverse and multilayered intellectual property (IP) portfolio protecting its high refractive index (RI) phenyl-based optical silicone encapsulants, which offer numerous high-value benefits to LED devices. These benefits include improved light output, excellent mechanical protection of LED components and enduring gas barrier properties for enhanced reliability.

“Dow Corning will always rigorously defend its intellectual property to ensure that our customers continue to receive the highest quality products and reliability we can provide to help them stay competitive in today’s fast-growing LED market,” said Kaz Maruyama, global industry director, Lighting Solutions, Dow Corning.

For nearly 15 years, Dow Corning has invested aggressively to develop optical silicone technologies and products designed to advance applications along the entire LED value chain – in China and across the globe. Among these materials are Dow Corning’s phenyl-based high RI silicone encapsulants, which the company began innovating over a decade ago in Japan where the technology was first patented. Additional patents for these advanced optical materials quickly followed in Korea, the United States, European Union, Taiwan, Malaysia and other countries. Chinese Patent asserted in the complaint against Beijing KMT, was granted on April 2, 2008.

“Asia currently leads the market transition to LEDs for general lighting, driven especially by swift penetration in China,” said Maruyama. “Supply chain integrity and consistent material quality are both key factors in ensuring that LEDs offer a credible, cost-effective alternative to conventional lighting. It takes only a few failed applications to raise doubts about the technology’s viability for future investment and adoption. Consequently, industry-wide defense and support of proven, patented and cutting-edge LED solutions such as Dow Corning’s OE Series helps validate the competitive value of LED lighting, and advances the interests of all.”

Nanostructures half the breadth of a DNA strand could improve the efficiency of light emitting diodes (LEDs), especially in the “green gap,” a portion of the spectrum where LED efficiency plunges, simulations at the U.S. Department of Energy’s National Energy Research Scientific Computing Center (NERSC) have shown.

This simulation of a 1-nm-wide indium nitride wire shows the distribution of an electron around a positively charged 'hole.' Strong quantum confinement in these small nanostructures enables efficient light emission at visible wavelengths. Credit: Visualization: Burlen Loring, Lawrence Berkeley National Laboratory

This simulation of a 1-nm-wide indium nitride wire shows the distribution of an electron around a positively charged ‘hole.’ Strong quantum confinement in these small nanostructures enables efficient light emission at visible wavelengths.
Credit: Visualization: Burlen Loring, Lawrence Berkeley National Laboratory

Using NERSC’s Cray XC30 supercomputer “Edison,” University of Michigan researchers Dylan Bayerl and Emmanouil Kioupakis found that the semiconductor indium nitride (InN), which typically emits infrared light, will emit green light if reduced to 1 nanometer-wide wires. Moreover, just by varying their sizes, these nanostructures could be tailored to emit different colors of light, which could lead to more natural-looking white lighting while avoiding some of the efficiency loss today’s LEDs experience at high power.

“Our work suggests that indium nitride at the few-nanometer size range offers a promising approach to engineering efficient, visible light emission at tailored wavelengths,” said Kioupakis.

At low power, nitride-based LEDs (most commonly used in white lighting) are very efficient, converting most of their energy into light. But turn the power up to levels that could light up a room and efficiency plummets, meaning a smaller fraction of electricity gets converted to light. This effect is especially pronounced in green LEDs, giving rise to the term “green gap.”

Nanomaterials offer the tantalizing prospect of LEDs that can be “grown” in arrays of nanowires, dots or crystals. The resulting LEDs could not only be thin, flexible and high-resolution, but very efficient, as well.

“If you reduce the dimensions of a material to be about as wide as the atoms that make it up, then you get quantum confinement. The electrons are squeezed into a small region of space, increasing the bandgap energy,” Kioupakis said. That means the photons emitted when electrons and holes combine are more energetic, producing shorter wavelengths of light.

The energy difference between an LED’s electrons and holes, called the bandgap, determines the wavelength of the emitted light. The wider the bandgap, the shorter the wavelength of light. The bandgap for bulk InN is quite narrow, only 0.6 electron volts (eV), so it produces infrared light. In Bayerl and Kioupakis’ simulated InN nanostructures, the calculated bandgap increased, leading to the prediction that green light would be produced with an energy of 2.3eV.

“If we can get green light by squeezing the electrons in this wire down to a nanometer, then we can get other colors by tailoring the width of the wire,” said Kioupakis. A wider wire should yield yellow, orange or red. A narrower wire, indigo or violet.

That bodes well for creating more natural-looking light from LEDs. By mixing red, green and blue LEDs engineers can fine tune white light to warmer, more pleasing hues. This “direct” method isn’t practical today because green LEDs are not as efficient as their blue and red counterparts. Instead, most white lighting today comes from blue LED light passed through a phosphor, a solution similar to fluorescent lighting and not a lot more efficient. Direct LED lights would not only be more efficient, but the color of light they produce could be dynamically tuned to suit the time of day or the task at hand.

Using pure InN, rather than layers of alloy nitride materials, would eliminate one factor that contributes to the inefficiency of green LEDs: nanoscale composition fluctuations in the alloys. These have been shown to significantly impact LED efficiency.

Also, using nanowires to make LEDs eliminates the “lattice mismatch” problem of layered devices. “When the two materials don’t have the same spacing between their atoms and you grow one over the other, it strains the structure, which moves the holes and electrons further apart, making them less likely to recombine and emit light,” said Kioupakis, who discovered this effect in previous research that also drew on NERSC resources. “In a nanowire made of a single material, you don’t have this mismatch and so you can get better efficiency,” he explained.

The researchers also suspect the nanowire’s strong quantum confinement contributes to efficiency by squeezing the holes and electrons closer together, a subject for future research. “Bringing the electrons and holes closer together in the nanostructure increases their mutual attraction and increases the probability that they will recombine and emit light.” Kioupakis said.

While this result points the way towards a promising avenue of exploration, the researchers emphasize that such small nanowires are difficult to synthesize. However, they suspect their findings can be generalized to other types of nanostructures, such as embedded InN nanocrystals, which have already been successfully synthesized in the few-nanometers range.

NERSC’s newest flagship supercomputer (named “Edison” in honor of American inventor Thomas Edison) was instrumental in their research, said Bayerl. The system’s thousands of compute cores and high memory-per-node allowed Bayerl to perform massively parallel calculations with many terabytes of data stored in RAM, which made the InN nanowire simulation feasible. “We also benefited greatly from the expert support of NERSC staff,” said Bayerl. Burlen Loring of NERSC’s Analytics Group created visualizations for the study, including the journal’s cover image. The researchers also used the open-source BerkeleyGW code, developed by NERSC’s Jack Deslippe.

CEA-Leti will demonstrate its new prototype for wireless high data rate Li-Fi (light fidelity) transmission at Light + Building 2014 in Frankfurt, Germany, March 30-April 4. The technology employs the high-frequency modulation capabilities of light-emitting diode (LED) engines used in commercial lighting. It achieves throughputs of up to 10Mb/s at a range of three meters, suitable for HD video streaming or Internet browsing, using light power of less than 1,000 lumens and with direct or even indirect lighting.

With this first proof of concept and its expertise in RF communications, Leti forecasts data transmission rates in excess of 100Mb/s with traditional lighting based on LED lamps using this technology approach and without altering the high-performance lighting characteristics.

Visible light communications (VLC), or Li-Fi, have gained significant momentum in recent years, primarily because of expectations that LEDs will become predominant in the lighting market. Indeed, as part of its Ecodesign process, the European Union established a schedule for LED lighting penetration (regulation No. 1194/2012). Halogen lamps will be phased out and replaced by LED lighting by Sept. 1, 2016, in 30 European countries.

Moreover, because LEDs can be modulated at very high frequencies and their oscillations are invisible to humans, they permit information transmission at very high data rates.

Other technical and market factors also are increasing interest in data transmission through lighting. These include crowding of the conventional radio frequency (RF) spectrum, the mobile data-traffic explosion in cellular networks, and the need for wireless data transmission without electromagnetic field (EMF) interference.

The demonstration is part of a Leti project begun in 2013 to achieve a high data rate Li-Fi prototype by applying Leti’s expertise in digital communications, hardware prototyping and solid-state lighting.

The optical system consists of an A19 lamp based on LEDs at the transmitter and an avalanche photodiode at the receiver. The digital communication component is implemented on a proprietary and reconfigurable platform that carries out a flexible multi-carrier modulation.

Leti, which is demonstrating the Li-Fi capability to show a promising alternative to conventional RF wireless communications, is also focusing on component optimization to offer a bidirectional link.

The prototype was demonstrated at Forum LED Europe in Paris in 2013 and at CES in Las Vegas earlier this year.

Researchers from North Carolina State University have developed a new processing technique that makes light emitting diodes (LEDs) brighter and more resilient by coating the semiconductor material gallium nitride (GaN) with a layer of phosphorus-derived acid.

“By coating polar GaN with a self-assembling layer of phosphonic groups, we were able to increase luminescence without increasing energy input,” says Stewart Wilkins, a Ph.D. student at NC State and lead author of a paper describing the work. “The phosphonic groups also improve stability, making the GaN less likely to degrade in solution.

“Making the GaN more stable is important,” Wilkins adds, “because that makes it more viable for use in biomedical applications, such as implantable sensors.”

The researchers started with polar GaN, composed of alternating layers of gallium and nitrogen. To increase luminescence, they etched the surface of the material with phosphoric acid. At the same time, they added phosphonic groups – organic molecules containing phosphorus – that self-assembled into a monolayer on the surface of the material. This layer further increased luminescence and improved the stability of the GaN by making it less likely to react chemically with its environment.

The paper, “In Situ Chemical Functionalization of Gallium Nitride with Phosphonic Acid Derivatives during Etching,” is published online in the journal Langmuir. Senior author of the paper is Dr. Albena Ivanisevic, an associate professor of materials science and engineering at NC State and associate professor of the joint biomedical engineering program at NC State and the University of North Carolina at Chapel Hill. The paper was co-authored by Dr. Consuelo Arellano, a research associate professor of statistics at NC State; Dr. Tania Paskova, a research professor of electrical and computer engineering at NC State; and Michelle Greenough, an undergraduate at Wagner College.

The research was supported in part by the National Science Foundation

Today, GaN on Sapphire is the main stream technology for LED manufacturing. GaN-on-Si technology appeared naturally as an alternative to sapphire to reduce cost. Yole Développement’s cost simulation indicates that the differential in silicon substrate cost is not enough to justify the transition to GaN-on-Si technology. The main driver is the ability to manufacture in existing, depreciated CMOS fabs in 6 inch or 8 inch.

“Despite potential cost benefits for LEDs, the mass adoption of GaN-on-Si technology for LED applications remains unclear. Opinions regarding the chance of success for LED-on-Si vary widely in the LED industry from unconditional enthusiasm to unjustified skepticism. Virtually all major LED makers are researching GaN-on-Si LED, but few have made it the core of their strategy and technology roadmap. Among the proponents, only Lattice Power, Plessey and Toshiba have moved to production and are offering commercial LED-on-Si,” explains Dr. Hong Lin, Yole Developpement analyst.

At Yole Développement, analysts believe that although significant improvements have been achieved, there are still some technology hurdles (performance, yields, CMOS compatibility). They consider that if the technology hurdles are cleared, GaN-on-Si LEDs will be adopted by some LED manufacturers, but will not become the industry standard. Yole Développement expects that Silicon will capture less than five percent of LED manufacturing by 2020.

GaN-on-Si technology will be widely adopted by power electronics applications

The power electronics market addresses applications such as AC to DC or DC to AC conversion, which is always associated with substantial energy losses that increase with higher power and operating frequencies. Incumbent silicon based technology is reaching its limit and it is difficult to meet higher requirements. GaN based power electronics have the potential to significantly improve efficiency at both high power and frequencies while reducing device complexity and weight. Power GaN are therefore emerging as a substitution to the silicon based technology. Today, Power GaN remains at its early stage and presents only a tiny part of power electronics market.

“We are quite optimistic about the adoption of GaN-on-Si technology for Power GaN devices. GaN-on-Si technology have brought to market the first GaN devices. Contrary to the LED industry, where GaN-on-Sapphire technology is main stream and presents a challenging target, GaN-on-Si will dominate the GaN based power electronics market because of its lower cost and CMOS compatibility,” says Dr. Eric Virey, analyst at Yole Developpement. Although GaN based devices remain more expensive than Si based devices today, the overall cost of GaN devices for some applications are expected to be lower than Si devices three years from now, according to some manufacturers.

“In our nominal case, GaN based devices could reach more than seven percent of the overall power device market by 2020,” adds Virey. GaN-on-Si wafers will capture more than one point five percent of the overall power substrate volume, representing more than 50 percent of the overall GaN-on-Si wafer volume, subjecting to the hypothesis that the 600V devices would take off in 2014-2015.

GaN-on-Si epiwafer: buy it or make it? Which business will be dominated?

GaN on Si LED

To adopt the GaN-on-Si technology, device makers have the choice between buying epiwafers or templates on the open market, or buying MOCVD reactors and making epiwafer by themselves. Today, there is a limited number of players selling either epiwafers or templates or both on the open market. These players comes from Japan, US and Europe. We have not observed an absolute dominance from one region.

As perceived by device markers, each business model has its pros & cons in terms of IP, technology dependence, R&D investments, and time. According to Yole Développement’s reports, analysts do not expect to see a significant template/epiwafer business emerge for LEDs and consider that LEDs makers would prefer making their epiwafers internally for mass production. For the power electronics industry, the opinion is divided. Yole Dévelopement considers that buying epiwafers could work as long as the price of the epiwafer on the open market keeps decreasing.

Following the boom in expansion of the Chinese LED market in 2011, many industry insiders and analysts speculated on whether the Chinese would be able to sustain the growth, or if many companies simply ordered an excessive amount of MOCVD reactors just to benefit from government subsidies. The failure of many of the companies was widely predicted. So, what’s happening in the China LED industry after three years?

According to a new IHS report on the Chinese LED market, China’s LED die production revenues will grow 36.6% to reach $1,475 million and packaged LEDs will grow 14.8 percent to reach $4,812 million in 2014. Sanan, the largest Chinese LED company with a more than 30 percent share of die production in China, is actually expanding capacity. Its second phase project in Wuhu is still going ahead this year, leading to the addition of new tools. Epistar, its largest rival will be directly competing this year to see who will be the world leader for total wafer capacity. MLS was estimated to be the largest Chinese packaged LED company in 2013 with slightly more than nine percent market share among thousands of other Chinese competitors.

Lighting is the major driving force for the China LED market growth from 2013 to 2014 and is forecast to exceed 50 percent share of all applications in 2014. The acceptance of LED replacement T-lamps, the falling cost of LED lamps generally, the continued economic growth, and the phasing out of incandescent A-lamps are all factors that are increasing the penetration rate of LED lamps in China.

Related news: Demand for key raw materials set to double as LED market booms

The backlight market also grew significantly from 2012 to 2013 – by 74 percent in LED die. High growth is expected to continue in 2014 due to Chinese companies’ technology improvements to replace imported products from Taiwan and Korea.

LEDs 2014

Although the Chinese domestic market is huge, international sales of most Chinese LED companies remain fairly low. However, they are catching up quickly. Larger companies are developing their own brands and IHS expects these suppliers to increase their presence in international markets in the near future.