Category Archives: Semiconductors

By Paula Doe, SEMI

For medtech applications to flourish, sensors need a supporting infrastructure that translates the data they harvest into actionable insights, says Qualcomm Life director of business development Gene Dantsker, who will speak about the future of digital healthcare in the Medtech program at SEMICON West. “Rarely can one device give a complete diagnosis,” he notes. “What’s missing is the integration of all the sensor data into prescriptive information.”

The maturing medtech sector has developed to the point where sensors can now capture massive amounts of data, conveniently collected from people via mobile devices. The sector now has higher compute capacity to process the data, and improving software can produce actionable insight from the information. The next challenge is to seamlessly integrate these components into legacy medical systems without disrupting existing workflow. “Doctors and nurses don’t have time for disruptive technology – a new system has to be invisible and frictionless to use, with one or fewer buttons, no training and truly automatic Bluetooth-like pairing,” he says. “So device makers need to pack all system intelligence into the circuits and software.”

Getting actionable healthcare information from sensors requires integration into the existing medical infrastructure. Source: Qualcomm Life

One interesting example is United Healthcare’s use of the Qualcomm Life infrastructure to collect data from the fitness trackers of 350,000 patients. The insurance company then pays users $4 a day, or ~$1500 a year, for standing, walking six times a day and other behaviors that clinical evidence shows will both improve patient health and reduce healthcare costs. “It’s a perfect storm of motivations for all stakeholders,” he says.

Next hot MEMS topics: Piezoelectric devices, environmental sensors, near-zero power standby

With sensor technology continuing to evolve, look for coming innovations in MEMS in piezoelectric devices, environmental sensors and near zero-power standby devices, says Alissa Fitzgerald, Founder and Managing Member of A.M. Fitzgerald and Associates, who will provide an update on emerging sensor technologies in the MEMS program at SEMICON West.

Piezoelectric devices can potentially be more stable and perhaps even easier to ramp to volume than capacitive ones, with AlN devices for microphones and ultrasonic sensors finding quick success. Now the maturing infrastructure for lead zirconate titantate (PZT) is enabling the scaling of production of higher performing piezo material with thin film deposition equipment from suppliers like Ulvac Technologies and Solmates and in foundry processes at Silex and STMicroelectronics, she notes.

In academic research, where most new MEMS emerge, market interest is driving development of environmental sensors and zero-power standby devices. With demand for environmental monitoring growing, much work is focusing on technologies that improve the sensitivity, selectivity and time of response of gas and particulate sensors. Research and funding is also focusing on zero or near-zero power standby sensors, using open circuits that draw no power until a physical stimulus such as vibration or heat wakes them up.

MEMS, however, likely won’t find as much of a market in autonomous vehicles as once thought. “While the automotive sensor market will need many optical sensors, MEMS players are competing with other optical and mechanical solutions,” says Fitzgerald. “And here the usual MEMS advantage of small size may not matter much, and the devices will have to meet the challenging automotive requirements for extreme ruggedness.”

By Paula Doe, SEMI

New metrology and inspection technologies and new analysis approaches made possible by improving compute technology offer solutions to finding the increasingly subtle variations in materials and subsystems that meet specifications but still cause defects on the wafer. More collaboration across the supply chain is helping too.  SEMICON West programs on materials and subsystems will address these issues.

New metrology approaches needed to deal with process margin challenges

As device process margins shrink and subtler materials variations cause unwanted variations,  the need for better monitoring of both surface and sub-surface material variations is driving a trend towards “metro-spection” – the convergence of metrology and inspection. “Device process margins have eroded to the point that traditional metrology strategies and techniques are no longer viable for controlling yield and parametric performance,” says Nanometrics Vice President Robert Fiordalice, who will speak in the materials program at SEMICON West. “Limited sampling capability, low throughput, insufficient sensitivity or the destructive nature of the techniques can often become problems. What’s more, deviations in material characteristics are not always determined by the initial quality of the material, but often arise from variations during the integration of the materials.”

“Device process margins have eroded to the point that traditional metrology strategies and techniques are no longer viable for controlling yield and parametric performance.” – Robert Fiordalice, Nanometrics

One new type of inline tool or line monitoring technology is Fourier Transform Infrared (FTIR) spectroscopy, traditionally used in quality control or tool characterization. Better sensitivity and higher throughput now enable rapid analysis and feedback for on-the-fly detection of subtle deviations in film properties that may compromise device performance or yield.

More advanced analytics will help extract new information from old metrology

More expensive metrology may not be required to identify subtle variations in in-spec materials that cause wafer defects. Today’s advanced compute capabilities now enable more sophisticated analysis of existing data and the identification of small but significant variations in raw materials and finished goods.

The figure of merit (FoM) values presented in certificate of analysis (CoA) reports miss subtle variations in raw material properties. Of particular note is the reduction of molecular weight distributions to a mean, and standard deviation, whereas variations in the tails are associated with pattern defects. Advanced compute capabilities now allow the industry to step beyond the FoM in favor of more holistic measures, enabling predictive analysis of resist chemical variations associated with specific pattern defects. Source: JSR Micro

“We often don’t need to find a new measure, but just a new way of looking at what we measure now,” says Jim Mulready, vice president of global quality assurance at JSR Micro. Mulready will speak in the SEMICON West program on materials defectivity issues. “The certificate of analysis reduces multiple measurements to a single figure of merit. But if we ignore all that raw data, we miss a chance to learn.  One of our sayings in quality is ‘Customers don’t feel the average, they feel the variation.’ In many electronic materials, the quality of the raw material can have a big impact on the final performance, but the types of analysis needed to look at the tails of the distribution of these measures (such as molecular weight) in detail used to be really hard to do. Now it’s becoming increasingly straightforward and affordable.”

 “We often don’t need to find a new measure, but just a new way looking at what we measure now.” – Jim Mulready, JSR Micro

Mulready says tools now available in the data processing sector enable the identification of subtle variations in materials that can cause defects on the wafer. These tools use methods like detailed subtractions of chromatography curves of polymer raw materials or analysis of tails of distributions of molecular weights. “Our job now is to drive these kinds of more sophisticated data analysis back into our chemical supply chain as well,” says Mulready. “We must work more closely with our suppliers to integrate their raw materials into our products. The reason the JSRs of the world exist is as a safety valve to reduce the variation from the chemical industry before it gets to the fab.”

Continued collaboration with equipment suppliers required as well

While the industry has been talking about the need for tighter collaboration between materials suppliers and equipment manufacturers for years, it still doesn’t always happen. “The material supplier and the equipment maker are tied together like kids in a three-legged race when we deliver an integrated system for consistent on-wafer performance,” says Cristina Chu, TEL/NEXX director of strategic business development, another speaker in the materials program.  “When we introduce changes to the tool hardware, we need to make sure it doesn’t upset the system. Similarly, we need the material supplier to send a bottle over when a new chemistry formulation is under development. If a new chemistry runs into problems in the field, it will take much more time for both of us to fix it at the customer site. The toolmaker can provide a slightly different perspective on applications, while being more objective than a customer on how the formulation performs compared to earlier versions.”

“The material supplier and the equipment maker are tied together like kids in a three-legged race when we deliver an integrated system for consistent on-wafer performance.” – Cristina Chu, TEL/NEXX

Regular and ongoing collaboration between chemistry suppliers and toolmakers enables the highest quality system solution to reach the customer. Chu notes that her team tries to maintain consistent collaborations with material suppliers across changes in organizations as the business environment changes. “For consistent on-wafer capabilities, we need a consistent collaboration process with chemistry suppliers. We need to meet with materials providers at a regular cadence throughout their development process. We need to check back with them as we scale up results from the coupon to the wafer level and to work out the kinks in the integrated solution together. The quality and consistency of our combined performance at the customer depends on ensuring the quality and consistency of our development and evaluation process as well.”

Fabs and subsystems suppliers look to pilot data sharing program to improve process margins

With ever tighter process margins, subtle variations in parameters that don’t appear in the specifications are also compromising results on the wafer, and neither the fab nor the supplier alone has the full information needed to improve performance. To help, a SEMI standards group is developing a protocol for a pilot program to standardize and automate some data sharing.

“In order for engineers to have constructive conversations about how to improve performance, we all need to exchange more information.” – Eric Bruce, Samsung Austin

The fab knows that performance is best with a particular parameter value, and knows when performance fluctuates,  but often faces a black box problem with no way of knowing what exactly is wrong. In the rush to get the tool back up, the fab engineers may not get around to emailing the supplier about the issue for some time. The subsystems supplier, on the other hand, may know the cause of the variation,  but likely has no way of knowing the critical parameters or ideal target valuesfor the fab’s process..  “In order for engineers to have constructive conversations about how to improve performance, we all need to exchange more information,” says Eric Bruce, Samsung Austin diffusion engineer, and co-chair of the SEMI standards effort working on the issue, who will speak in the subsystems program at SEMICON West.

A potential solution could be to create a standard and automated process to share particular data, agreed to in the purchasing contract, whereby the subsystems supplier shares more information about their parameters with the fab, and the fab in return gives feedback on what parameters work best to drive improved performance. The best place to start will likely be on parts that do not contain core yield-related IP, but where usage and lifetime information is useful.

“We’re looking for people to participate in a pilot program to work together with suppliers to try sharing some information to improve performance,” says Bruce. “There’s a lot of this sharing in the backroom anyway, but this could make it fast and automated, and make everyone’s engineering job a lot easier.”

Fujitsu Semiconductor Limited (Fujitsu Semiconductor) and United Microelectronics Corporation (NYSE:UMC; TWSE:2303) (“UMC”), a global semiconductor foundry, today announced that UMC will acquire all of the shares of Mie Fujitsu Semiconductor Limited (MIFS), a 300mm wafer foundry joint venture between both companies.

In addition to the 15.9% of MIFS shares currently owned by UMC, Fujitsu Semiconductor will transfer the remaining 84.1% of its shares in MIFS to UMC, making MIFS a wholly-owned subsidiary of the Taiwan-based foundry. The consideration of the transaction will be around ¥ JPN 57.6 billion. The transfer is planned for January 1, 2019, pending approval by the relevant governmental authorities.

In 2014, both companies concluded an agreement for UMC to acquire a 15.9% stake in MIFS through progressive phases. Since then, besides equity investment, Fujitsu Semiconductor and UMC have been furthering their partnership through licensing of UMC’s 40nm technology and establishment of a 40nm logic production line at MIFS. After several years of joint operations, both companies have agreed on the benefits of integrating MIFS into UMC, which has a strong business foundation as a world leading semiconductor foundry with a broad customer portfolio, enhanced manufacturing expertise and extensive technology offerings enabling MIFS to maximize its values it can deliver to all stakeholders, including its customers.

As a member of UMC, MIFS will continue to provide foundry services of an even higher quality to its customers. While the name of the company and details of distribution after the transaction will soon be determined, for the present, MIFS will maintain its existing distribution channels for customers.

Jason Wang, co-president of UMC said, “UMC is experiencing high demand from mature 12″ processes. With new applications in 5G, IoT, automotive and AI requiring these technologies, we anticipate the market conditions driving this demand to remain strong for the foreseeable future. The acquisition of a fully qualified, equipped, and volume production proven 12″ facility provides greater time and ROI advantages compared to building a fab from scratch, which would cost several billion dollars and several years to construct and equip. With existing 300mm fabs in Taiwan, China and Singapore, Japan-based MIFS will help customers further diversify their manufacturing risk with a robust production base to ensure business continuity, which is especially important for automotive chip makers who require a stable and uninterrupted source of supply. UMC will also be able to leverage its decades of world class IC production experience with Japan’s local talent and world-renowned quality standards to better serve Japanese and international customers. We are excited that the strong partnership between UMC and Fujitsu Semiconductor will enable us to achieve further growth and provide customers with higher value through the acquisition of MIFS.”

“With its strengths in technology, such as ultra-low power consumption process technology, non-volatile memory technology for embedded applications, and RF and mmWave technology, as well as its highly reliable production system, as accepted by automotive customers, and its outstanding and experienced workforce, MIFS has been providing its customers with high quality foundry services” said Kagemasa Magaribuchi, President and Representative Director of Fujitsu Semiconductor. “To sustain its growth in the future and deliver far greater values to its customers, Fujitsu Semiconductor and MIFS have determined that it is the best to further enhance its competitiveness as a pure-play foundry by becoming a member of the UMC Group, a leading global semiconductor foundry. I expect that, by fully leveraging the UMC Group’s strengths, including its expertise and its cost competitiveness driven both by capital investment backed by ample financial resources as well as its globally expanded businesses, MIFS will further grow as a global company. I believe that the further growth of MIFS will also contribute to maintaining and expanding a workforce and to the local economy in the regions MIFS resides.”

As silicon-based semiconductors reach their performance limits, gallium nitride (GaN) is becoming the next go-to material to advance light-emitting diode (LED) technologies, high-frequency transistors and photovoltaic devices. Holding GaN back, however, is its high numbers of defects.

This material degradation is due to dislocations — when atoms become displaced in the crystal lattice structure. When multiple dislocations simultaneously move from shear force, bonds along the lattice planes stretch and eventually break. As the atoms rearrange themselves to reform their bonds, some planes stay intact while others become permanently deformed, with only half planes in place. If the shear force is great enough, the dislocation will end up along the edge of the material.

As silicon-based semiconductors reach performance limits, gallium nitride is becoming the next go-to material for several technologies. Holding GaN back, however, is its high numbers of defects. Better understanding how GaN defects form at the atomic level could improve the performance of the devices made using this material. Researchers have taken a significant step by examining and determining six core configurations of the GaN lattice. They present their findings in the Journal of Applied Physics. This image shoes the distribution of stresses per atom (a) and (b) of a-edge dislocations along the <1-100> direction in wurtzite GaN. Credit: Physics Department, Aristotle University of Thessaloniki

Layering GaN on substrates of different materials makes the problem that much worse because the lattice structures typically don’t align. This is why expanding our understanding of how GaN defects form at the atomic level could improve the performance of the devices made using this material.

A team of researchers has taken a significant step toward this goal by examining and determining six core configurations of the GaN lattice. They presented their findings in the Journal of Applied Physics, from AIP Publishing.

“The goal is to identify, process and characterize these dislocations to fully understand the impact of defects in GaN so we can find specific ways to optimize this material,” said Joseph Kioseoglou, a researcher at the Aristotle University of Thessaloniki and an author of the paper.

There are also problems that are intrinsic to the properties of GaN that result in unwanted effects like color shifts in the emission of GaN-based LEDs. According to Kioseoglou, this could potentially could be addressed by exploiting different growth orientations.

The researchers used computational analysis via molecular dynamics and density functional theory simulations to determine the structural and electronic properties of a-type basal edge dislocations along the <1-100> direction in GaN. Dislocations along this direction are common in semipolar growth orientations.

The study was based on three models with different core configurations. The first consisted of three nitrogen (N) atoms and one gallium (Ga) atom for the Ga polarity; the second had four N atoms and two Ga atoms; the third contained two N atoms and two Ga core-associated atoms. Molecular dynamic calculations were performed using approximately 15,000 atoms for each configuration.

The researchers found that the N polarity configurations exhibited significantly more states in the bandgap compared to the Ga polarity ones, with the N polar configurations presenting smaller bandgap values.

“There is a connection between the smaller bandgap values and the great number of states inside them,” said Kioseoglou. “These findings potentially demonstrate the role of nitrogen as a major contributor to dislocation-related effects in GaN-based devices.”

Gases and engineering company The Linde Group, a supplier of electronic materials, is investing in the expansion of existing products to improve business continuity planning (BCP), while adding new products with improved purity to meet the growing needs of sub-10nm semiconductor factories and advanced flat panel manufacturers.

Expanded capacity of fluorine/nitrogen mixtures
Linde has expanded capacity for fluorine/nitrogen mixtures at Medford, Oregon for etching and chamber cleaning applications.

  • This allows both low- and high-pressure fluorine and nitrogen mixture production.
  • On-site high-purity fluorine production minimizes third-party supply issues.
  • The product line is expanding to include fluorine/argon mixtures in place with tri-mix       capability(fluorine/argon/nitrogen) later in 2018.
  • This facility complements fluorine mixture production at the Linde Alpha, New Jersey facility.

New precursors to meet customer requirements
New elements of innovation continue to emerge in CVD, ALD, and ALE precursors such as high-volume supply capabilities, process solutions to deliver quality in our advanced precursors and an applications lab to support new materials development. Linde is developing deposition precursors and etch gases: silicon precursors, digermanium mixtures, high K and metal gate precursors, isotope gases and etch gases such as CF3I (trifluoroiodomethane) and custom fluorinated silane.

“Linde recognizes that our customers continue to make investments in new processes and technologies, and we are committed to investing with them for the materials they will require now and in the future,” states Matt Adams, Head of Sales and Marketing for Linde Electronics and Specialty Products.

Linde Electronics will be exhibiting at the SEMICON West tradeshow in San Francisco July 10-12. Its focus will be on the quality, expertise, commitment and environmental leadership that Linde Electronics brings to the semiconductor industry through such offerings as electronic specialty gases, on-site solutions, materials recycling and recovery and SPECTRA® nitrogen plants.

SEMICON West is the annual tradeshow for the micro-electronics manufacturing industry. All visitors are welcome to visit Linde in booth number 5644 in the North hall in the Moscone Center in San Francisco.

Researchers at Tokyo Institute of Technology have developed flexible terahertz imagers based on chemically “tunable” carbon nanotube materials. The findings expand the scope of terahertz applications to include wrap-around, wearable technologies as well as large-area photonic devices.

Carbon nanotubes (CNTs) are beginning to take the electronics world by storm, and now their use in terahertz (THz) technologies has taken a big step forward.

The CNT THz imager enabled clear, non-destructive visualization of a metal paper clip inside an envelope. Credit: ACS Applied Nano Materials

Due to their excellent conductivity and unique physical properties, CNTs are an attractive option for next-generation electronic devices. One of the most promising developments is their application in THz devices. Increasingly, THz imagers are emerging as a safe and viable alternative to conventional imaging systems across a wide range of applications, from airport security, food inspection and art authentication to medical and environmental sensing technologies.

The demand for THz detectors that can deliver real-time imaging for a broad range of industrial applications has spurred research into low-cost, flexible THz imaging systems. Yukio Kawano of the Laboratory for Future Interdisciplinary Research of Science and Technology, Tokyo Institute of Technology (Tokyo Tech), is a world-renowned expert in this field. In 2016, for example, he announced the development of wearable terahertz technologies based on multiarrayed carbon nanotubes.

Kawano and his team have since been investigating THz detection performance for various types of CNT materials, in recognition of the fact that there is plenty of room for improvement to meet the needs of industrial-scale applications.

Now, they report the development of flexible THz imagers for CNT films that can be fine-tuned to maximize THz detector performance.

Publishing their findings in ACS Applied Nano Materials, the new THz imagers are based on chemically adjustable semiconducting CNT films.

By making use of a technology known as ionic liquid gating[1], the researchers demonstrated that they could obtain a high degree of control over key factors related to THz detector performance for a CNT film with a thickness of 30 micrometers. This level of thickness was important to ensure that the imagers would maintain their free-standing shape and flexibility, as shown in Figure 1.

“Additionally,” the team says, “we developed gate-free Fermi-level[2] tuning based on variable-concentration dopant solutions and fabricated a Fermi-level-tuned p?n junction[3] CNT THz imager.” In experiments using this new type of imager, the researchers achieved successful visualization of a metal paper clip inside a standard envelope (see Figure 2.)

The bendability of the new THz imager and the possibility of even further fine-tuning will expand the range of CNT-based devices that could be developed in the near future.

Moreover, low-cost fabrication methods such as inkjet coating could make large-area THz imaging devices more readily available.

GLOBALFOUNDRIES today announced that Socionext Inc. will manufacture the third and latest generation of its graphics display controllers, the SC1701, on GF’s 55nm Low Power Extended (55LPx) process technology with embedded non-volatile memory (SuperFlash®). The 55LPx platform enables several new features in Socionext’s SC1701 series including enhanced diagnostic and security protection capabilities, cyclic redundancy code (CRC) checks, picture freeze detection, and multi window signature unit for advanced in-vehicle display systems. The shipping of the SC1701 from Socionext will start at the end of July.

In recent years, the number of in-vehicle electronic systems has risen exponentially with increasing requirements for multiple content-rich displays. Socionext’s SC1701 controller integrates a variety of system component features along with APIX®3 technology and automotive safety functions to meet the increasing demand for high speed video and data connectivity and stringent safety requirements. The device supports display resolution up to one U-HD (4K) or two F-HD (2K) at 30bpp, and capable of receiving two separate video streams over a single link by utilizing the VESA® display stream compression (DSC) method. Moreover, the SC1701 offers video content protection through built-in HDCP decryption technology that enables a richer user experience.

“The SC1701 display controller is designed to support high performance computing within a vehicle, with one of the most innovative evolutions in automotive system architectures,” said Koichi Yamashita, senior vice president and head of IoT and Graphics Solution Business Unit at Socionext. “GF’s automotive grade 1 qualified 55LPx platform, with its low power logic and highly reliable embedded non-volatile memory, was ideal for our product.”

GF’s 55LPx platform, with SST’s SuperFlash® memory technology, provides a fast path-to-product solution, and is fully qualified for consumer, industrial and automotive grade 1 applications. The implementation of SuperFlash® on 55LPx provides a small bitcell size, increased fast read speed along with superior data retention and endurance.

“GF is excited to be working with Socionext, who is a leader in state-of-the-art SoC technology,” said Dave Eggleston, vice president of embedded memory at GF. “Socionext joins our rapidly growing client base for GF’s 55LPx platform, which offers a combination of superior low power logic, embedded non-volatile memory, extensive IP, and superior reliability for the industrial and automotive grade 1 system-on-chip markets.”

The 55LPx-enabled platform is in volume production at GF’s 300mm line in Singapore. In addition to the SC1701, Socionext is currently developing several products on the technology, joining On Semiconductor, Silicon Mobility and Fudan Microelectronics, who are currently optimizing their chip designs with GF’s 55LPx platform for wearable IoT and automotive products.

Process design kits and an extensive offering of silicon proven IP are available now. For more information on GF’s mainstream CMOS solutions, contact your GF sales representative or go to globalfoundries.com.

SEMI today announced the formation of the SEMI Electronic Materials Group (EMG), a new collaborative technology community that combines the former Chemical & Gas Manufacturers Group (CGMG), the Silicon Manufacturers Group (SMG) and other SEMI member segments to better serve the interests of the electronics materials industry. The group is open to SEMI Members involved in materials manufacture, distribution and services throughout the microelectronics industry.

“Materials companies are the linchpin of innovation – enabling advances in technology across the microelectronics value chain – from sand to smartphones,” said Bart Pitcock, vice president and general manager, North America for KMG Electronic Chemicals and chair of the EMG Americas Chapter. “We are pleased to build out this SEMI platform to drive program collaboration, information exchange, issues management and communication to materials industry stakeholders including customers and policymakers.”

Electronic materials have played an increasingly important role in technology innovation as electronics move from IT-centric to ubiquitous computing across consumer, industrial and data management markets. The market size for wafer fabrication materials (US$ 28 billion), semiconductor packaging materials (US$ 19 billion), and electronics assembly materials (US$ 20 billion) reflects the critical importance of materials to the growth and expansion of the worldwide electronic manufacturing ecosystem.

To help manage growing interdependencies across the microelectronics supply chain, the EMG now represents all materials makers, aligning with the SEMI mission to serve members across the microelectronics design and manufacturing industries.

As the first SEMI technology community, the Silicon Manufacturers’ Group was instrumental in the evolution of SEMI and the industry, defining standards for silicon wafers, the substrate on which semiconductors are built.

“Members of the former Silicon Manufacturers’ Group are pleased to join forces with other companies that provide the critical materials that enable the worldwide electronics manufacturing industries,” said Neil Weaver, director, Product Development and Applications Engineering of Shin-Etsu Handotai America. “We see great value and mutual purpose in working with others in the electronics materials community to advance our common interests.”

The EMG will continue its mission to facilitate collective efforts on issues related to the microelectronics materials industry that are more effectively addressed by an industry association than by individual companies.

“We are pleased with the unanimous affirmation of the new community by SEMI regions and member segments worldwide,” said Tom Salmon, vice president of Collaborative Technology Platforms at SEMI.

An international collaborative research group including Tokyo Institute of Technology, Universite PARIS DIDEROT and CNRS has discovered that CO2 is selectively reduced to CO[1] when a photocatalyst[2] composed of an organic semiconductor material and an iron complex is exposed to visible light. They have made clear that it is possible to convert CO2, the major factor of global warming, into a valuable carbon resource using visible light as the energy source, even with a photocatalyst composed of only commonly occurring elements.

This is CO2 reduction using a photocatalyst combining carbon nitride and an iron compl. Credit: Osamu Ishitani

In recent years, technologies to reduce CO2into a resource using metal complexes and semiconductors as photocatalysts are being developed worldwide. If this technology called artificial photosynthesis can be applied, scientists would be able to convert CO2, which is considered the major factor of global warming and is being treated as a villain, into a valuable carbon resource using sunlight as the energy source.

Complexes and inorganic semiconductors containing precious and rare metals such as ruthenium, rhenium, and tantalum have been used in highly active photocatalysts reported so far. However, considering the tremendous amount of CO2, there was a need to create new photocatalysts made only with elements widely available on Earth.

Professor Osamu Ishitani, Associate Professor Kazuhiko Maeda, research staff Ryo Kuriki and others of Tokyo Tech, with the support of JST (Japan Science and Technology Agency)’s Strategic Basic Research Programs (CREST Establishment of Molecular Technology towards the Creation of New Functions) for international collaborative research projects, performed collaborative research with the research group of Professor Marc Robert of Universite PARIS DIDEROT and CNRS. As a result, by fusing carbon nitride, an organic semiconductor, with a complex made of iron and organic materials and using it as a photocatalyst, they succeeded in turning CO2 into a resource at high efficiency under the condition of exposure to visible light at ordinary temperature and pressure.

By combining the organic semiconductor carbon nitride[3], made of carbon and nitrogen, with an iron complex and using it as a photocatalyst, they found that they could reduce carbon dioxide (CO2) to carbon monoxide (CO) at high efficiency. This photocatalytic reaction progresses when exposed to visible light, which is the major component in the wavelength band of sunlight. The carbon nitride absorbs visible light and drives the migration of electrons from the reducing agent to the iron complex, the catalyst. The iron complex uses that electrons to reduce CO2 to CO. The turnover number[4], the external quantum efficiency[5], and the selectivity[6] of CO2 reduction–performance indicators for the formation of CO–reached 155, 4.2%, and 99%, respectively. These values are almost the same as when precious metal or rare metal complexes are used, and about ten times more than photocatalysts reported so far using base metals or organic molecules.

This research was the first to demonstrate that CO2 can be reduced into a resource efficiently using sunlight as the energy source, even by using materials which exist abundantly on Earth, such as carbon, nitrogen, and iron. Tasks remaining are to further improve their function as a photocatalyst and to succeed in fusing them with oxidation photocatalysts which can use water, which exists abundantly on Earth and is inexpensive, as a reducing agent.

TowerJazz, the global specialty foundry, today announced a ramp for its radio frequency silicon-on-insulator (RF SOI) 65nm process in its 300mm Uozu, Japan fab. TowerJazz has signed a contract with long-term partner, SOITEC, a semiconductor materials supplier to guarantee a supply of tens of thousands of 300mm SOI silicon wafers, securing wafer prices for the next years and ensuring supply to its customers, despite a very tight SOI wafer market.

With best in class metrics, TowerJazz’s 65nm RF SOI process enables the combination of low insertion loss and high power handling RF switches with options for high-performance low-noise amplifiers as well as digital integration. The process can reduce losses in an RF switch improving battery life and boosting data rates in handsets and IoT terminals.

According to Mobile Experts, LLC, a market research firm for mobile communications, the mobile RF front-end market is estimated to reach $22 billion in 2022 from an estimated $16 billion in 2018. TowerJazz’s breakthrough RF SOI technology continues to support this high-growth market and is well-poised to take advantage of next-generation 5G standards which will boost data rates and provide further content growth opportunities in the coming years.

TowerJazz is also proud to announce its relationship with Maxscend, a provider of RF components and IoT integrated circuits, ramping in this new technology.

“We chose TowerJazz for its advanced technology capabilities and its ability to deliver in high volume while continuously innovating with a strong roadmap. We specifically selected its 300mm 65nm RF SOI platform for our next-generation product line due to its superior performance, enabling low insertion loss and high power handling,” said Zhihan Xu, Maxscend Chief Executive Officer.

“We are delighted to see the strong adoption of 300mm RF SOI through this large capacity and supply agreement with TowerJazz to augment our already significant 200mm RF SOI partnership.  TowerJazz was the first foundry to ramp our RFeSI products to high volume production in 200mm and continues as one of the industry leaders in innovation in this exciting RF market with advanced and differentiated offerings,” said Paul Boudre, SOITEC Chief Executive Officer.

“We are thrilled about our continued partnership with Maxscend as they bring breakthrough products to market, manufactured using our latest 300mm 65nm RF SOI platform. Also, we are very pleased with our SOITEC partnership to secure tens of thousands of 300mm RF SOI wafers to feed the strong demand in our 300mm Japan factory,” said Russell Ellwanger, TowerJazz Chief Executive Officer.

For more information on TowerJazz’s 65nm RF SOI technology, please visit: http://www.towerjazz.com/sige-bicmos_rf-cmos.html.