Category Archives: Semiconductors

The spread of digital camera applications in vehicles, machine vision, human recognition and security systems, as well as for more powerful camera phones will drive CMOS image sensor sales to an eighth straight record-high level this year with worldwide revenues growing 10% to $13.7 billion, following a 19% surge in 2017, according to IC Insights’ 2018 O-S-D Report—A Market Analysis and Forecast for Optoelectronics, Sensors/Actuators, and Discretes. The new 375-page report shows nothing stopping CMOS image sensors from continuing to set record-high annual sales and unit shipments through 2022 (Figure 1).

Figure 1

Figure 1

CMOS image sensors continue to take marketshare from charge-coupled devices (CCDs) as embedded digital-imaging capabilities expand into a wider range of systems and new end-use applications, says the 2018 O-S-D Report.  With the smartphone market maturing, sales growth in CMOS image sensors slowed to 6% in 2016, but strong demand in other imaging applications played a major factor in boosting revenues by 19% to $12.5 billion last year.  Sales of CCD and other image sensor technologies fell 2% in 2017 to about $1.6 billion after rising 5% in 2016, according to the new IC Insights report.

Overall, CMOS image sensors grabbed 89% of total image sensor sales in 2017 compared to 74% in 2012 and 54% in 2007.  Unit shipments of CMOS imaging devices represented 81% of total image sensors sold in 2017 compared to 64% in 2012 and 63% in 2007.  New CMOS designs keep improving for a variety of light levels (including near darkness at night), high-speed imaging, and greater resolution as well as integrating more functions for specific applications, such as security video cameras, machine vision in robots and cars, human recognition, hand-gesture interfaces, virtual/augmented reality, and medical systems.

In new smartphones, CMOS image sensors are also seeing a new wave of growth with the increase of dual-lens camera systems (using two sensors) for enhanced photography.  Cellular camera phones accounted for 62% of CMOS image sensor sales in 2017, but that marketshare is forecast to slip to 45% in 2022. Automotive CMOS image sensors are projected to grow the fastest among major end-use applications through the five-year forecast shown in the new O-S-D Report, rising by a compound annual growth rate (CAGR) of 38.4% to about 15% of total CMOS image sensor sales in 2022 ($2.8 billion) while camera phone-generated revenues are expected to rise by a CAGR of just 2.2% to $8.6 billion that year.

Spending on RF power semiconductors (for < 4GHz and > 3W) was still moving forward in 2017. The wireless infrastructure segment was flat but other markets – notably the military/defense – are moving forward, according to ABI Research, a market-foresight advisory firm providing strategic guidance on the most compelling transformative technologies. Additionally, Gallium Nitride (GaN) – long seen as the likely promising new “material of choice” for RF power semiconductors – is continuing its march to capture share.

“Gallium Nitride (GaN) has the promise of gaining market share in 2018 and is forecast to be a significant force over the next few years,” noted ABI Research Director Lance Wilson. “It bridges the gap between two older technologies, exhibiting the high-frequency performance of Gallium Arsenide combined with the power handling capabilities of Silicon LDMOS. It is now a mainstream technology which has now achieved measurable market share and in future will capture a significant part of the market.”

Wireless infrastructure while representing about two-thirds of total sales has been anemic recently. Growth for other segments outside of wireless infrastructure are showing mid-single digit CAGR over the forecast period of 2018 to 2023.

The vertical market showing the strongest uptick in the RF power semiconductor adoption business, outside of defense, is Commercial Avionics and Air Traffic Control, which Wilson describes as being now “a significant market.” While the producers of these devices are in the major industrialized countries, this sub-segment market is now so global that end equipment buyers can be from anywhere.

Analog Devices, Inc. awarded Bob Reay, Leonard Shtargot, Jesper Steensgaard, and Sam Zhang the title of Analog Devices Fellow, a distinguished technical position given to engineers who contribute significantly to the company’s success through exceptional innovation, leadership and an unparalleled ability to unite and mentor others.

“These Fellows exemplify Analog Devices’ unwavering commitment to technological innovation,” said Ray Stata, cofounder and chairman of the board, Analog Devices. “Bob and Leonard hold numerous patents and have mentored many budding innovators. Jesper has a diverse skill set that makes him not only an exceptional engineer, but a passionate teacher and leader. Sam, through his incredible work on inertial MEMS (microelectromechanical systems) sensors, has helped Analog Devices introduce groundbreaking sensors used in a wide range of applications and industries.”

Bob Reay
Bob is an innovator, technologist, teacher and historian who earned both his B.S. and M.S. degrees in Electrical Engineering from Stanford University. During his 30 years at Linear Technology Corp. (LTC), which is now part of Analog Devices, Bob was granted 22 patents. He is credited with helping to build LTC’s CMOS Interface business, opening the company’s first remote design center in Singapore, and serving as the first vice president and general manager of LTC’s Mixed-Signal business unit. Bob’s thoughtful and well-reasoned approach to problem solving has led people to seek his advice for technical and strategic challenges alike.

Leonard Shtargot
Leonard joined Linear Technology in 2001 as a design engineer with a B.S. EECS from the University of California at Berkeley. Leonard has contributed innovations in power conversion technology and designed several families of high-performance DC/DC switching regulators focusing on new circuits, high-voltage silicon process improvements, advanced flip-chip package designs, and test techniques. These products have been widely adopted by the automotive and industrial technology sectors. Leonard is also a hands-on teacher who mentors other engineers and often can be found in the lab or test floor helping his colleagues solve technical problems.

Jesper Steensgaard
Jesper is another alumnus of Linear Technology and earned his Ph.D. from the Technical University of Denmark in 1999. With 22 U.S. patents, Jesper has contributed to the release of 79 high-performance, successive-approximation-register A/D converters since 2007 and spearheaded the development of a new line of “intrinsically-linear” SAR A/D converters with performance levels that are now the best in the industry. He excels at both detailed circuit design and system-level concepts. Jesper was the founder of his own company, Esion LLC, and has held academic positions at Columbia University and Oregon State University.

Sam Zhang
Sam joined Analog Devices in 2001 after earning a B.S. degree in Electrical Engineering from Tsinghua University and a M.S. degree in Mechanical Engineering from the George Washington University. He has been awarded 21 U.S. patents with another five pending. For more than a decade, Sam has been the principal designer of ADI’s low-G inertial MEMS products, including the company’s first 3-axis accelerometer and MEMS microphone products. He also led the design of several generations of high-performance 3-axis accelerometer products and created a design methodology that accurately predicts inertial sensor offset. His latest groundbreaking contributions have been in the areas of ultra-low noise accelerometers and condition-based monitoring sensors that are re-shaping the way machine health is being addressed.

In the wake of its recent discovery of a flat form of gallium, an international team led by scientists from Rice University has created another two-dimensional material that the researchers said could be a game changer for solar fuel generation. Rice materials scientist Pulickel Ajayan and colleagues extracted 3-atom-thick hematene from common iron ore. The research was introduced in a paper today in Nature Nanotechnology.

Hematene may be an efficient photocatalyst, especially for splitting water into hydrogen and oxygen, and could also serve as an ultrathin magnetic material for spintronic-based devices, the researchers said.

“2D magnetism is becoming a very exciting field with recent advances in synthesizing such materials, but the synthesis techniques are complex and the materials’ stability is limited,” Ajayan said. “Here, we have a simple, scalable method, and the hematene structure should be environmentally stable.”

Ajayan’s lab worked with researchers at the University of Houston and in India, Brazil, Germany and elsewhere to exfoliate the material from naturally occurring hematite using a combination of sonication, centrifugation and vacuum-assisted filtration.

Hematite was already known to have photocatalytic properties, but they are not good enough to be useful, the researchers said.

“For a material to be an efficient photocatalyst, it should absorb the visible part of sunlight, generate electrical charges and transport them to the surface of the material to carry out the desired reaction,” said Oomman Varghese, a co-author and associate professor of physics at the University of Houston.

“Hematite absorbs sunlight from ultraviolet to the yellow-orange region, but the charges produced are very short-lived. As a result, they become extinct before they reach the surface,” he said.

Hematene photocatalysis is more efficient because photons generate negative and positive charges within a few atoms of the surface, the researchers said. By pairing the new material with titanium dioxide nanotube arrays, which provide an easy pathway for electrons to leave the hematene, the scientists found they could allow more visible light to be absorbed.

The researchers also discovered that hematene’s magnetic properties differ from those of hematite. While native hematite is antiferromagnetic, tests showed that hematene is ferromagnetic, like a common magnet. In ferromagnets, atoms’ magnetic moments point in the same direction. In antiferromagnets, the moments in adjacent atoms alternate.

Unlike carbon and its 2D form, graphene, hematite is a non-van der Waals material, meaning it’s held together by 3D bonding networks rather than non-chemical and comparatively weaker atomic van der Waals interactions.

“Most 2D materials to date have been derived from bulk counterparts that are layered in nature and generally known as van der Waals solids,” said co-author Professor Anantharaman Malie Madom Ramaswamy Iyer of the Cochin University of Science and Technology, India. “2D materials from bulk precursors having (non-van der Waals) 3D bonding networks are rare, and in this context hematene assumes great significance.”

According to co-author Chandra Sekhar Tiwary, a former postdoctoral researcher at Rice and now an assistant professor at the Indian Institute of Technology, Gandhinagar, the collaborators are exploring other non-van der Waals materials for their 2D potential.

For years, manufacturers have offered computers with increasing amounts of memory packed into smaller devices. But semiconductor companies can’t reduce the size of memory components as quickly as they used to, and current designs are not energy-efficient. Conventional memory devices use transistors and rely on electric fields to store and read out information. An alternative approach being heavily investigated uses magnetic fields to store information. One promising version of magnetic device relies on the magnetoelectric effect which allows an electric field to switch the magnetic properties of the devices. Existing devices, however, tend to require large magnetic and electric fields that are difficult to produce and contain.

One potential solution for this problem is a new switching element made from chromia (Cr2O3), which, one day, may be used in computer memory and flash drives. “The device has better potential for scaling, so it could be made smaller, and would use less energy once it’s suitably refined,” said Randall Victora, a researcher at the University of Minnesota and an author on the paper. The researchers report their findings in Applied Physics Letters, from AIP Publishing.

Computer memory is composed of switching elements, tiny devices that can switch on and off to store bits of information as ones and zeros. Previous researchers discovered that chromia’s magnetoelectric properties means it can be “switched” with only an electric field, but switching requires the presence of a static magnetic field. Building on these elements, Victora and Rizvi Ahmed have created a design for a memory device with a heart of chromia that does not require any externally applied magnetic field to operate.

Their design surrounds the chromia with magnetic material. This provides an effective magnetic field through quantum mechanical coupling to Cr magnetic moments, while allowing devices to be arranged in a way that blocks stray magnetic fields from affecting nearby devices. An element to read out the state of the device, to determine if it’s in one or zero state, is placed on top of the device. This could potentially pack more memory into a smaller space because the interface between the chromia and the magnet is the key to the coupling that makes the device function. As the device shrinks, the greater surface area of the interface relative to its volume improves the operation. This property is an advantage over conventional semiconductors, where increases in surface area as size shrinks lead to greater charge leakage and heat loss.

Next, Victora and Ahmed aim to collaborate with colleagues who work with chromia to build and test the device. If successfully fabricated, then the new device could potentially replace dynamic random access memory in computers.

“DRAM is a huge market. It provides the fast memory inside the computer, but the problem is that it leaks a lot of charge, which makes it very energy-inefficient,” Victora said. DRAM is also volatile, so information disappears once the power source is interrupted, like when a computer crash erases an unsaved document. This device, as described in the paper, would be nonvolatile.

However, such a memory device will likely take years to perfect. One significant barrier is the device’s heat tolerance. Computers generate a lot of heat, and modeling predicts that the device would stop functioning around 30 degrees Celsius, the equivalent of a hot summer day. Optimizing the chromia, perhaps by doping it with other elements, may improve its functioning and make it more suitable to replace existing memory devices.

 

 The 2018 Critical Materials Council (CMC) Conference—held April 26-27 at the Hilton Chandler in Arizona— was a great gathering with presentations from Everspin, Intel, GlobalFoundries, and NXP discussing current fab challenges, and the relationships to near-term materials solutions. Held immediately following private CMC face-to-face meeting, this public event enabled targeted discussions on problems, opportunities, and issues in the present and future materials market.

Session 1 presentations from Keller&Heckman, KPMG, Semico, VLSI Research, and the United States’ Environmental Protection Agency reminded attendees of the many environmental, financial, and political factors impacting global fab supply-chains. Jeff Morris, the US EPA’s Director of the Office of Pollution Prevention and Toxics, reviewed the status of enforcement of the Toxic Substances Control Act (TSCA) with a focus on N-Methylpyrrolidone (NMP), per- and poly-fluorinated Substances (PFAS, PFOS, PFOA), and Photo-Acid Generators (PAG) used in semiconductor manufacturing.

Session 2 covering materials issues in fabs today explored the evolving specifications needed in silicon wafers, ion-implantation, noble gases, and metal depositions including atomic-layer (ALD) chemical-vapor (CVD) physical-vapor (PVD) and electro-chemical (ECD). The Figure shows 200mm-diameter silicon wafer global supply and manufacturing demand from 2015 to 2020, as modeled by TECHCET President and CEO Lita Shon-Roy in her presentation on materials markets. TECHCET expects that this year will see a balancing and then an excess of supply in this wafer size used for manufacturing Opto-electronics, Sensors, and Discretes (OSD) along with Radio Frequency (RF) communications chips.

The presentations on cobalt processing from Air Liquide, Applied Materials, Fraunhofer, and Fujimi—mostly in Session 3—provided fantastic perspectives on solutions to inherent integration challenges with this metal. Cobalt has been used as a barrier or a liner for on-chip copper interconnect lines for many years, but the material is now being integrated as the entire interconnect material for the smallest metal lines in the most aggressively scaled IC structures. Nicolas Blasco of Air Liquide discussed the complex path to discovering novel ALD precursors, while Michelle Garza of Fujimi discussed ways to manage the complexity of developing new Chemical-Mechanical Planarization (CMP) slurries for application-specific cobalt integration.

Senior Analyst with TECHCET Ed Korczynski presented an update on the latest lithography materials to enable patterning the smallest possible commercial IC devices, including recently disclosed Self-Aligned Multi-Patterning (SAMP) technology options to improve IC yields. Cost models for different multi-patterning process flows were recently presented at the 2018 SPIE Advanced Lithography conference showing how Extreme Ultra-Violet (EUV) lithography can be cost-effective despite double the tool costs. Key to cost-effective use of EUV will be control of stochastic yield losses which are colloquially termed “Black Swans”.

The Wednesday night reception and the Thursday night break-out roundtable discussions gave everyone time to make new connections and have discrete discussions on metrology, specifications, and technology integration. Block your calendar in 2019 for the 4th annual CMC Conference, tentatively scheduled for April 25-26 in the US. www.cmcfabs.org www.techcet.com

ABOUT CMC: The Critical Materials Council (CMC) of Semiconductor Fabricators (CMCFabs.org) is a membership-based organization that works to anticipate and solve critical materials issues in a pre-competitive environment. The CMC is a unit of TECHCET.

ABOUT TECHCET: TECHCET CA LLC is an advisory service firm focused on process materials supply chains, electronic materials technology, and materials market analysis for the semiconductor, display, solar/PV, and LED industries. Since 2000, the company has been responsible for producing the SEMATECH Critical Material Reports, covering silicon wafers, semiconductor gases, wet chemicals, CMP consumables, Photoresists, and ALD/CVD Precursors. For additional information about these reports or about CMC Fabs membership or associate-membership for suppliers please contact Diane Scott at [email protected]  +1-480-332-8336, or go to www.techcet.com or www.cmcfabs.org.

In a Nature Communications paper published this week (https://rdcu.be/MYO6), imec, the world-leading research and innovation hub in nano-electronics and digital technology, describes a new concept for direct identification of single DNA bases. The technique has the potential to detect, with an unprecedented spatial resolution and without any labeling, the genetic code, as well as epigenetic variations in DNA. The combination of nanopore fluidics and surface enhanced Raman spectroscopy makes it a unique concept and a very promising tool for evolutionary biologists and for research on disease development.

Today, direct, real-time identification of nucleobases in DNA strands in nanopores is limited by the sensitivity and the spatial resolution of established ionic sensing strategies. In addition, established DNA sequencing techniques often use fluorescent labeling which is costly and time-consuming. In its Nature Communications paper, imec demonstrated a promising alternative based on optical spectroscopy, with no need for labeling and with the unique ability to identify nucleobases, individually, and incorporated in a DNA strand. The technique is based on nanofluidics to drive the DNA strand through an engineered plasmonic nanoslit, and surface enhanced Raman spectroscopy to make a ‘fingerprint’ of the adsorbed nucleobases up to the level of molecular bonds. The spectroscopic signal is enhanced both by a gold coating on top of the nanoslit, and the engineered shape of the nanoslit.  “The result reported here is an important step towards a solution for fast and direct sequencing up to the epigenetic level,” stated and Chang Chen, senior researcher at imec.

The signal generated by Raman spectroscopy holds a lot of information about the molecules and the molecular bonds. Not only can the DNA code be ‘read’, but also base modifications such as methylation, histone acetylation, and microRNA modification, which carry more detailed information about epigenetic variations. Such variations are important for evolutionary studies as they influence gene expression in cells. Moreover, they have been shown to impact the origin and development of diseases such as cancer.

“We leverage our world-class expertise in chip design and 300 mm Si wafer manufacturing technology and bio-lab facilities to develop tailored solutions for the life sciences industry,” stated Pol Van Dorpe, principal member of technical staff. “The solution we describe here is only one example of the technologies we are working on. Our toolbox includes knowledge on nanopores, spectroscopy, photonics, single-molecule detection and nanofluidics which we use in developing next-generation solutions for our industry partners in genomics and diagnostics.

Osram has added to its expertise in semiconductor-based optical security technology by acquiring US-based Vixar Inc. Already a technology leader in infrared LEDs and infrared laser diodes, Osram will have a unique breadth of technological expertise and an expanded product portfolio after bringing on board Vixar’s specialist capabilities in the field of VCSEL. While currently known primarily for identification applications in mobile devices, VCSEL also can be used to recognize gestures and measure distances in medical, industrial and automotive applications. Vixar was founded by pioneers in the VCSEL industry, having first brought VCSEL to the data communication market in the late 1990s, and more recently by founding Vixar in 2005 to pursue sensing applications. Approximately 20 employees of the company, which is based in Plymouth, Minnesota, will transfer to Osram as a result of the acquisition. Vixar is profitable both on an operational and net results level. The parties to the deal have agreed not to disclose financial details. Closing of the transaction is expected in summer.

“The acquisition of Vixar is adding to our expertise, particularly in the fast-growing market for security technologies,” said Olaf Berlien, CEO of OSRAM Licht AG. Osram is a technology leader in infrared optical semiconductors and has already succeeded in bringing to market light sources for fingerprint sensors, iris scanners, and 2D facial recognition. The acquired capabilities will pave the way for further security technologies, including ultra-compact 3D facial recognition. In addition to unlocking smartphones and other consumer electronics devices, such technologies also can be used for high-security access controls in industry.

The way in which VCSEL technology captures 3D environmental data has applications in everything from gesture recognition, augmented reality, robotics and proximity sensors to autonomous driving. VCSEL stands for vertical cavity surface emitting laser and is a special type of laser diode in which the light is emitted perpendicular to the surface of the semiconductor chip. Vixar is a fabless semiconductor company, and has developed a robust volume supply chain consisting of merchant foundries serving the optoelectronic market. Osram’s depth and breadth of semiconductor experience will further strengthen the manufacturing capabilities for the rapidly growing VCSEL market.

Researchers at Duke University and North Carolina State University have demonstrated the first custom semiconductor microparticles that can be steered into various configurations repeatedly while suspended in water.

With an initial six custom particles that predictably interact with one another in the presence of alternating current (AC) electric fields of varying frequencies, the study presents the first steps toward realizing advanced applications such as artificial muscles and reconfigurable computer systems.

The study appears online on May 3 in the journal Nature Communications.

“We’ve engineered and encoded multiple dynamic responses in different microparticles to create a reconfigurable silicon toolbox,” said Ugonna Ohiri, a recently graduated electrical engineering doctoral student from Duke and first author of the paper. “By providing a means of controllably assembling and disassembling these particles, we’re bringing a new tool to the field of active matter.”

While previous researchers have worked to define self-assembling systems, few have worked with semiconductor particles, and none have explored the wide range of custom shapes, sizes and coatings that are available to the micro- and nanofabrication industry. Engineering particles from silicon presents the opportunity to physically realize electronic devices that can self-assemble and disassemble on demand. Customizing their shapes and sizes presents opportunities to explore a wide-ranging design space of new motile behaviors.

“Most previous work performed using self-assembling particles has been done with shapes such as spheres and other off-the-shelf materials,” said Nan Jokerst, the J. A. Jones Professor of Electrical and Computer Engineering at Duke. “Now that we can customize whatever arbitrary shapes, electrical characteristics and patterned coatings we want with silicon, a whole new world is opening up.”

In the study, Jokerst and Ohiri fabricated silicon particles of various shapes, sizes and electrical properties. In collaboration with Orlin Velev, the INVISTA Professor of Chemical and Biomolecular Engineering at NC State, they characterized how these particles responded to different magnitudes and frequencies of electric fields while submerged in water.

Based on these observations, the researchers then fabricated new batches of customized particles that were likely to exhibit the behaviors they were looking for, resulting in six different engineered silicon microparticle compositions that could move through water, synchronize their motions, and reversibly assemble and disassemble on demand.

The thin film particles are 10-micron by 20-micron rectangles that are 3.5 microns thick. They’re fabricated using Silicon-on-Insulator (SOI) technology. Since they can be made using the same fabrication technology that produces integrated circuits, millions of identical particles could be produced at a time.

“The idea is that eventually we’re going to be able to make silicon computational systems that assemble, disassemble and then reassemble in a different format,” said Jokerst. “That’s a long way off in the future, but this work provides a sense of the capabilities that are out there and is the first demonstration of how we might achieve those sorts of devices.”

That is, however, only the tip of the proverbial iceberg. Some of the particles were fabricated with both p-type and n-type regions to create p-n junctions — common electrical components that allow electricity to pass in only one direction. Tiny metal patterns were also placed on the particles’ surfaces to create p-n junction diodes with contacts. In the future, researchers could even engineer particles with patterns using other electrically conductive or insulating materials, complex integrated circuits, or microprocessors on or within the silicon.

“This work is just a small snapshot of the tools we have to control particle dynamics,” said Ohiri. “We haven’t even scratched the surface of all of the behaviors that we can engineer, but we hope that this multidisciplinary study can pioneer future studies to design artificial active materials.”

A simple method that uses hydrogen chloride can better control the crystal structure of a common semiconductor and shows promise for novel high-powered electronic applications.

The electronic components used in computers and mobile devices operate at relatively lower power. But high-power applications, such as controlling electrical power grids, require alternative materials that can cope with much higher voltages. For example, an insulating material begins to conduct electricity when the field is high enough, an effect known as electrical breakdown. For this reason, power electronics often use nitride-based semiconductors, such as gallium nitride, which have a very high breakdown field and can be epitaxially grown to create multilayered semiconductors.

However, ever-increasing energy demands and the desire to make electricity distribution more efficient requires even more electrically robust materials. Gallium oxide (Ga2O3) has a theoretical breakdown field more than twice that of gallium-nitride alloys and so has emerged as an exciting candidate for this function. The latest challenge however is a simple way to deposit high-quality gallium oxide on the substrates commonly used for power electronics, such as sapphire.

Haiding Sun, Xiaohang Li, and co-workers from KAUST worked with industry partners Structured Materials Industries, Inc. in the U.S. to demonstrate a relatively simple method to control the crystal structure of gallium oxides on a sapphire substrate using a technology known as metalorganic chemical vapor deposition (MOCVD). “We were able to control the growth by changing just one parameter: the flow rate of hydrogen chloride in the chamber,” explains Sun. “This is the first time that hydrogen chloride has been used during oxide growth in an MOCVD reactor.”

Working in a clean suit in the lab, Dr. Sun holds up a gallium-oxide template. Credit: © 2018 KAUST

Working in a clean suit in the lab, Dr. Sun holds up a gallium-oxide template. Credit: © 2018 KAUST

The atoms in gallium oxide can be arranged in a number of different forms known as polymorphs. β­­­?Ga2O3 is the most stable polymorph but is difficult to grow on substrates of other materials. ε?Ga2O3 has been grown on sapphire but its growth rate has been difficult to control.

Different polymorphs of gallium oxide can be grown in a MOCVD chamber by controlling the flow of hydrogen chloride.

Different polymorphs of gallium oxide can be grown in a MOCVD chamber by controlling the flow of hydrogen chloride.