Category Archives: Semiconductors

Silicon solar cells dominate the global photovoltaic market today with a share of 90 percent. With ever new technological developments, research and industry are nearing the theoretical efficiency limit for semiconductor silicon. At the same time, they are forging new paths to develop a new generation of even more efficient solar cells.

The Fraunhofer researchers achieved the high conversion efficiency of the silicon-based multi-junction solar cell with extremely thin 0.002 mm semiconductor layers of III-V compound semiconductors, bonding them to a silicon solar cell. To compare, the thickness of these layers is less than one twentieth the thickness of a human hair. The visible sunlight is absorbed in a gallium-indium-phosphide (GaInP) top cell, the near infrared light in gallium-arsenide (GaAs) and the longer wavelengths in the silicon subcell. In this way, the efficiency of silicon solar cells can be significantly increased.

Silicon-based multi-junction solar cell consisting of III-V semiconductors and silicon. The record cell converts 33.3 percent of the incident sunlight into electricity.  © Fraunhofer ISE/Photo: Dirk Mahler

Silicon-based multi-junction solar cell consisting of III-V semiconductors and silicon. The record cell converts 33.3 percent of the incident sunlight into electricity.
© Fraunhofer ISE/Photo: Dirk Mahler

“Photovoltaics is a key pillar for the energy transformation,” says Dr. Andreas Bett, Institute Director of Fraunhofer ISE. “Meanwhile, the costs have decreased to such an extent that photovoltaics has become an economically viable competitor to conventional energy sources. This development, however, is not over yet. The new result shows how material consumption can be reduced through higher efficiencies, so that not only the costs of photovoltaics can be further optimized but also its manufacture can be carried out in a resource-friendly manner.

Already in November 2016, the solar researchers in Freiburg together with their industry partner EVG demonstrated an efficiency of 30.2 percent, increasing it to 31.3 percent in March 2017. Now they have succeeded once again in greatly improving the light absorption and the charge separation in silicon, thus achieving a new record of 33.3 percent efficiency. The technology also convinced the jury of the GreenTec Awards 2018 and has been nominated among the top three in the category “Energy.”

The Technology

For this achievement, the researchers used a well-known process from the microelectronics industry called “direct wafer bonding” to transfer III-V semiconductor layers, of only 1.9 micrometers thick, to silicon. The surfaces were deoxidized in a EVG580® ComBond® chamber under high vacuum with a ion beam and subsequently bonded together under pressure. The atoms on the surface of the III-V subcell form bonds with the silicon atoms, creating a monolithic device. The complexity of its inner structure is not evident from its outer appearance: the cell has a simple front and rear contact just as a conventional silicon solar cell and therefore can be integrated into photovoltaic modules in the same manner.

EVG ComBond automated high-vacuum wafer bonding platform  (Photo courtesy of EV Group).

EVG ComBond automated high-vacuum wafer bonding platform
(Photo courtesy of EV Group).

The III-V / Si multi-junction solar cell consists of a sequence of subcells stacked on top of each other. So-called “tunnel diodes” internally connect the three subcells made of gallium-indium-phosphide (GaInP), gallium-arsenide (GaAs) and silicon (Si), which span the absorption range of the sun’s spectrum. The GaInP top cell absorbs radiation between 300 and 670 nm. The middle GaAs subcell absorbs radiation between 500 and 890 nm and the bottom Si subcell between 650 and 1180 nm, respectively. The III-V layers are first epitaxially deposited on a GaAs substrate and then bonded to a silicon solar cell structure. Here a tunnel oxide passivated contact (TOPCon) is applied to the front and back surfaces of the silicon. Subsequently the GaAs substrate is removed, a nanostructured backside contact is implemented to prolong the path length of light. A front side contact grid and antireflection coating are also applied.

On the way to the industrial manufacturing of III-V / Si multi-junction solar cells, the costs of the III-V epitaxy and the connecting technology with silicon must be reduced. There are still great challenges to overcome in this area, which the Fraunhofer ISE researchers intend to solve through future investigations. Fraunhofer ISE’s new Center for High Efficiency Solar Cells, presently being constructed in Freiburg, will provide them with the perfect setting for developing next-generation III-V and silicon solar cell technologies. The ultimate objective is to make high efficiency solar PV modules with efficiencies of over 30 percent possible in the future.

Project Financing

Dr. Roman Cariou, the young scientist and first author, was supported through the European Union with a Marie Curie Stipendium (HISTORIC, 655272). The work was also supported by the European Union within the NanoTandem project (641023) as well as by the German Federal Ministry for Economic Affairs and Energy BMWi in the PoTaSi project (FKZ 0324247).

Correction: A previous version of this article incorrectly state “imec” in the headline, instead of Fraunhofer ISE. Solid State Technology regrets the error.

Technology companies Osram and Continental have successfully completed negotiations on their joint venture, which is expected to begin operations in the second half of calendar year 2018. The joint venture, in which each of the partners has a 50 percent stake, aims to combine Continental’s and Osram’s respective expertise in lighting, light control and electronics. Leading the joint venture are CEO Dirk Linzmeier from Osram and CFO Harald Renner from Continental.

“Digitalization is creating new possibilities in automotive lighting applications and, in turn, tremendous opportunities that we want to leverage with Continental,” said Hans-Joachim Schwabe, CEO of Osram’s Specialty Lighting division. “By joining forces, we will be in an even better position to drive innovations by working closely with the automotive industry, seamlessly integrating lighting, sensor technology and electronics in a single application. This will allow us to advance new intelligent light functions, such as the combination of lighting and sensor technology in a module or light-based communication between the driver, other road users and the vehicle’s surroundings.”

Andreas Wolf, head of Continental’s Body & Security business unit, added, “The joint venture puts us in a unique position to drive technological change in the automotive lighting market and to develop intelligent lighting solutions by combining our expertise in software and electronics with Osram’s automotive lighting expertise. The innovations Osram and Continental bring to this joint venture will allow us to offer our customers an unrivaled and unprecedented portfolio in the lighting market.”

The joint venture will be based within the region of Munich, but will operate globally to ensure rapid development cycles with customers in their local areas. The U.S. operations of Osram Continental will be based in Hendersonville, Tennessee. The product portfolio will feature semiconductor-based lighting modules such as LED modules for front and rear headlights, laser modules and light control units.

The Semiconductor Industry Association (SIA), representing U.S. leadership in semiconductor manufacturing, design, and research, today announced worldwide sales of semiconductors reached $36.8 billion for the month of February 2018, an increase of 21.0 percent compared to the February 2017 total of $30.4 billion. Global sales in February were 2.2 percent lower than the January 2018 total of $37.6 billion, reflecting typical seasonal market trends. All monthly sales numbers are compiled by the World Semiconductor Trade Statistics (WSTS) organization and represent a three-month moving average.

“The global semiconductor market continued to demonstrate substantial and consistent growth in February, notching its 19th consecutive month of year-to-year sales increases and growing by double-digit percentages across all major regional markets,” said John Neuffer, president and CEO, Semiconductor Industry Association. “The Americas stood out once again, with sales increasing nearly 40 percent compared to last year, and sales were up year-to-year across all major semiconductor product categories.”

Year-to-year sales increased significantly across all regions: the Americas (37.7 percent), Europe (21.7 percent), China (16.4 percent), Asia Pacific/All Other (16.2 percent), and Japan (15.5 percent). Month-to-month sales increased slightly in Europe (0.9 percent), but fell somewhat in Japan (-0.9 percent), Asia Pacific/All Other (-1.5 percent), China (-2.6 percent), and the Americas (-4.3 percent).

For comprehensive monthly semiconductor sales data and detailed WSTS Forecasts, consider purchasing the WSTS Subscription Package. For detailed data on the global and U.S. semiconductor industry and market, consider purchasing the 2017 SIA Databook.

Feb 2018

Billions

Month-to-Month Sales                              

Market

Last Month

Current Month

% Change

Americas

8.63

8.26

-4.3%

Europe

3.40

3.43

0.9%

Japan

3.21

3.18

-0.9%

China

12.01

11.70

-2.6%

Asia Pacific/All Other

10.35

10.19

-1.5%

Total

37.60

36.75

-2.2%

Year-to-Year Sales                         

Market

Last Year

Current Month

% Change

Americas

6.00

8.26

37.7%

Europe

2.82

3.43

21.7%

Japan

2.75

3.18

15.5%

China

10.05

11.70

16.4%

Asia Pacific/All Other

8.77

10.19

16.2%

Total

30.38

36.75

21.0%

Three-Month-Moving Average Sales

Market

Sep/Oct/Nov

Dec/Jan/Feb

% Change

Americas

8.77

8.26

-5.8%

Europe

3.42

3.43

0.1%

Japan

3.21

3.18

-1.0%

China

11.90

11.70

-1.7%

Asia Pacific/All Other

10.39

10.19

-1.9%

Total

37.69

36.75

-2.5%

 

Nobuaki Kurumatani today took office as the first Chairman and CEO of Toshiba Corporation (TOKYO:6502) to be appointed from outside the company in over 50 years.

Commenting on his appointment as Representative Executive Officer and Chairman and CEO, Mr. Kurumatani said, “I am honored to be appointed CEO, and very much aware of the responsibilities I take on. Toshiba is not just any company. Its corporate DNA has realized countless Japan- and world-first technologies and products, made Toshiba a source of pride in Japan for nearly 145 years, and also made us a global leader.

“I believe that helping Toshiba back on its feet is my true calling. I am here at Toshiba to support change and transformation, and I see my role as to build on the company’s resilience and to lead its recovery. To secure growth, we must radically improve our earning power and reinforce our finances. We must move out of our comfort zone and promote fundamental reforms.”

Mr. Kurumatani most recently served as President of CVC Asia Pacific Japan (CVC). Before joining CVC in May 2017, he was Deputy President and a Director of Sumitomo Mitsui Financial Group, one of the largest financial institutions in Japan, where his career was devoted to corporate planning, public relations and internal auditing. He is a graduate of the University of Tokyo, where he studied Economics.

Satoshi Tsunakawa has taken on a new role in Toshiba as Representative Executive Officer and President, and Chief Operations Officer (COO). From today on, Mr. Kurumatani and Mr. Tsunakawa will together execute the management of Toshiba Group.

 SiFive, a provider of commercial RISC-V processor IP, today announced it raised $50.6 million in a Series C round led by existing investors Sutter Hill Ventures, Spark Capital and Osage University Partners alongside new investor Chengwei Capital, and strategic investors including Huami, SK Telecom and Western Digital and other companies that are among the most respected and iconic companies in the industry. This Series C round brings the total investment in SiFive to $64.1 million. Additionally, the company also announced it has signed a multi-year license to its Freedom Platform with Western Digital, which has pledged to produce 1 billion RISC-V cores.

This investment will enable SiFive to continue to innovate and provide leadership in bringing highly disruptive RISC-V technologies to the marketplace. “Over the past two years, SiFive has been at the forefront of the RISC-V ecosystem,” said Stefan Dyckerhoff, managing director at Sutter Hill Ventures and member of the SiFive board of directors. “Sutter Hill Ventures is confident that SiFive will continue to provide innovative solutions that will fundamentally change the semiconductor industry.”

Said Martin Fink, chief technology officer, Western Digital: “RISC-V delivers a platform for innovation unshackled from the proprietary interface of the past. This freedom allows us to bring compute closer to data to optimize special purpose compute capabilities targeted at Big Data and Fast Data applications. The next generation of applications like Machine Learning, AI, and Analytics require this ability to focus on a specific task. Western Digital is focused on the next generation of innovation to enable this new class of applications to deliver the possibilities of data.”

This Series C financing comes amid continued milestones for SiFive since its last round of funding in May 2017. Since then, SiFive has expanded its executive team with seasoned industry veterans including CEO Naveed Sherwani. The company also moved to a new, larger headquarters in Silicon Valley, a move that was prompted by a projected 3X growth in headcount.

“We are honored by the continued partnership with our investors and energized by new engagements with longtime industry leaders,” said Naveed Sherwani, CEO of SiFive. “This funding from our investors and licensing agreements with strategic partners establishes a strong financial foundation which will help us to continue our trailblazing path of engineering innovations and extend our market leadership around the world.”

SiFive’s mission is to democratize access to custom silicon through its IPs and platforms, globally. Since becoming available, HiFive1 and HiFive Unleashed software development boards have been deployed in more than 50 countries. Additionally, the company has engaged with multiple customers across its IP and SoC products, shipped the industry’s first RISC-V SoC in 2016 and the industry’s first RISC-V IP with support for Linux in October 2017.

Plastics are excellent insulators, meaning they can efficiently trap heat – a quality that can be an advantage in something like a coffee cup sleeve. But this insulating property is less desirable in products such as plastic casings for laptops and mobile phones, which can overheat, in part because the coverings trap the heat that the devices produce.

Now a team of engineers at MIT has developed a polymer thermal conductor — a plastic material that, however counterintuitively, works as a heat conductor, dissipating heat rather than insulating it. The new polymers, which are lightweight and flexible, can conduct 10 times as much heat as most commercially used polymers.

Researchers at MIT have designed a new way to engineer a polymer structure at the molecular level, via chemical vapor deposition. This allows for rigid, ordered chains, versus the messy, 'spaghetti-like strands' that normally make up a polymer. This chain-like structure enables heat transport both along and across chains. Credit: MIT News Office / Chelsea Turner

Researchers at MIT have designed a new way to engineer a polymer structure at the molecular level, via chemical vapor deposition. This allows for rigid, ordered chains, versus the messy, ‘spaghetti-like strands’ that normally make up a polymer. This chain-like structure enables heat transport both along and across chains. Credit: MIT News Office / Chelsea Turner

“Traditional polymers are both electrically and thermally insulating. The discovery and development of electrically conductive polymers has led to novel electronic applications such as flexible displays and wearable biosensors,” says Yanfei Xu, a postdoc in MIT’s Department of Mechanical Engineering. “Our polymer can thermally conduct and remove heat much more efficiently. We believe polymers could be made into next-generation heat conductors for advanced thermal management applications, such as a self-cooling alternative to existing electronics casings.”

Xu and a team of postdocs, graduate students, and faculty, have published their results today in Science Advances. The team includes Xiaoxue Wang, who contributed equally to the research with Xu, along with Jiawei Zhou, Bai Song, Elizabeth Lee, and Samuel Huberman; Zhang Jiang, physicist at Argonne National Laboratory; Karen Gleason, associate provost of MIT and the Alexander I. Michael Kasser Professor of Chemical Engineering; and Gang Chen, head of MIT’s Department of Mechanical Engineering and the Carl Richard Soderberg Professor of Power Engineering.

Stretching spaghetti

If you were to zoom in on the microstructure of an average polymer, it wouldn’t be difficult to see why the material traps heat so easily. At the microscopic level, polymers are made from long chains of monomers, or molecular units, linked end to end. These chains are often tangled in a spaghetti-like ball. Heat carriers have a hard time moving through this disorderly mess and tend to get trapped within the polymeric snarls and knots.

And yet, researchers have attempted to turn these natural thermal insulators into conductors. For electronics, polymers would offer a unique combination of properties, as they are lightweight, flexible, and chemically inert. Polymers are also electrically insulating, meaning they do not conduct electricity, and can therefore be used to prevent devices such as laptops and mobile phones from short-circuiting in their users’ hands.

Several groups have engineered polymer conductors in recent years, including Chen’s group, which in 2010 invented a method to create “ultradrawn nanofibers” from a standard sample of polyethylene. The technique stretched the messy, disordered polymers into ultrathin, ordered chains — much like untangling a string of holiday lights. Chen found that the resulting chains enabled heat to skip easily along and through the material, and that the polymer conducted 300 times as much heat compared with ordinary plastics.

But the insulator-turned-conductor could only dissipate heat in one direction, along the length of each polymer chain. Heat couldn’t travel between polymer chains, due to weak Van der Waals forces — a phenomenon that essentially attracts two or more molecules close to each other. Xu wondered whether a polymer material could be made to scatter heat away, in all directions.

Xu conceived of the current study as an attempt to engineer polymers with high thermal conductivity, by simultaneously engineering intramolecular and intermolecular forces — a method that she hoped would enable efficient heat transport along and between polymer chains.

The team ultimately produced a heat-conducting polymer known as polythiophene, a type of conjugated polymer that is commonly used in many electronic devices.

Hints of heat in all directions

Xu, Chen, and members of Chen’s lab teamed up with Gleason and her lab members to develop a new way to engineer a polymer conductor using oxidative chemical vapor deposition (oCVD), whereby two vapors are directed into a chamber and onto a substrate, where they interact and form a film. “Our reaction was able to create rigid chains of polymers, rather than the twisted, spaghetti-like strands in normal polymers.” Xu says.

In this case, Wang flowed the oxidant into a chamber, along with a vapor of monomers – individual molecular units that, when oxidized, form into the chains known as polymers.

“We grew the polymers on silicon/glass substrates, onto which the oxidant and monomers are adsorbed and reacted, leveraging the unique self-templated growth mechanism of CVD technology,” Wang says.

Wang produced relatively large-scale samples, each measuring 2 square centimeters – about the size of a thumbprint.

“Because this sample is used so ubiquitously, as in solar cells, organic field-effect transistors, and organic light-emitting diodes, if this material can be made to be thermally conductive, it can dissipate heat in all organic electronics,” Xu says.

The team measured each sample’s thermal conductivity using time-domain thermal reflectance — a technique in which they shoot a laser onto the material to heat up its surface and then monitor the drop in its surface temperature by measuring the material’s reflectance as the heat spreads into the material.

“The temporal profile of the decay of surface temperature is related to the speed of heat spreading, from which we were able to compute the thermal conductivity,” Zhou says.

On average, the polymer samples were able to conduct heat at about 2 watts per meter per kelvin – about 10 times faster than what conventional polymers can achieve. At Argonne National Laboratory, Jiang and Xu found that polymer samples appeared nearly isotropic, or uniform. This suggests that the material’s properties, such as its thermal conductivity, should also be nearly uniform. Following this reasoning, the team predicted that the material should conduct heat equally well in all directions, increasing its heat-dissipating potential.

Going forward, the team will continue exploring the fundamental physics behind polymer conductivity, as well as ways to enable the material to be used in electronics and other products, such as casings for batteries, and films for printed circuit boards.

“We can directly and conformally coat this material onto silicon wafers and different electronic devices” Xu says. “If we can understand how thermal transport [works] in these disordered structures, maybe we can also push for higher thermal conductivity. Then we can help to resolve this widespread overheating problem, and provide better thermal management.”

Mattson Technology introduces Novyka product family, an innovative technology for atomic level surface treatment and ultra-selective etching of extremely thin and delicate materials for continued scaling of 3D logic and memory devices.

“There are significant challenges in scaling with 3D structures for advanced memory and logic chips that include small, narrow, deep and complicated features composed of thin layers of different materials. Among these manufacturing challenges is selective removal of certain layers without damaging or removing other layers and without affecting other features,” said Dr. Subhash Deshmukh, Chief Business Officer of Mattson Technology. “Another challenge is cleaning of these complex structures, as wet chemistry is no longer able to meet the requirements of cleaning the very bottom of the high-aspect ratio features while maintaining device structure integrity.”

“Our new Novyka™ products offer proprietary chemistries in surface cleaning, surface treatment and surface modification. The unique designs of Novyka™ products further extend to enable ultra-high selectivity in removal of thin and delicate layers in 3D device structures,” said Dr. Michael Yang, Executive Vice President and Chief Technology Officer of Mattson Technology. “In addition to delivering the most innovative process solutions to some of the key technical challenges in the industry, Novyka™ products have the lowest running cost, or the best total cost of ownership in their class.”

“We are very excited about the potential of Novyka products as we are working closely with several of our most advanced customers on a variety of leading edge applications. With Mattson Technology achieving record revenue and profit in 2017, we continue to relentlessly drive technology innovations and provide uncompromising service to our global customer base,” commented Dr. Allen Lu, CEO and President of Mattson Technology.

Mattson Technology, a Delaware Company, headquartered in Fremont, California, designs, manufactures, markets and supports semiconductor wafer processing equipment. Mattson’s dry strip, plasma etch, rapid thermal processing and millisecond annealing equipment are used in high volume manufacturing by leading memory and logic chip makers around the world.

The semiconductor industry closed out 2017 in blockbuster fashion, posting the highest year-over-year growth in 14 years. Global semiconductor revenue grew 21.7 percent, reaching $429.1 billion in 2017, according to IHS Markit (Nasdaq: INFO).

Recording year-over-year growth of 53.6 percent, and its highest semiconductor revenue ever, Samsung replaced Intel as the new market leader of the semiconductor industry in 2017. Intel was followed by SK Hynix, in third position.

“2017 was quite a memorable year,” said Shaun Teevens, semiconductor supply chain analyst, IHS Markit. “Alongside record industry growth, Intel, which had led the market for 25 years, was supplanted by Samsung as the leading semiconductor supplier in the world.”

Among the top 20 semiconductor suppliers, SK Hynix and Micron enjoyed the largest year-over-year revenue growth, growing 81.2 percent and 79.7 percent, respectively. “A very favorable memory market with strong demand and high prices was mainly responsible for the strong growth of these companies,” Teevens said.

Qualcomm remained the top fabless company in 2017, followed by nVidia, which moved into the second position, after growing 42.3 percent over the previous year. Among the top 20 fabless companies, MLS enjoyed the highest market share gain, moving from number 20 to number 15 in the IHS Markit revenue ranking.

Figure 1

Figure 1

Memory was the strongest industry category

Memory integrated circuits proved to be the strongest industry category, growing 60.8 percent in 2017 compared to the previous year. Within the category, DRAM grew 76.7 percent and NAND grew 46.6 percent — the highest growth rate for both memory subcategories in 10 years. Much of the revenue increase was based on higher prices and increased demand for memory chips, relative to tight supply.

“The technology transition from planar 2D NAND to 3D NAND drove the market into an unbalanced supply-demand environment in 2017, driving prices higher throughout the year,” said Craig Stice, senior director, memory and storage, IHS Markit. “Entering 2018, the 3D NAND transition is now almost three-quarters of the total bit percent of production, and it is projected to provide supply relief for the strong demand coming from the SSD and mobile markets. Prices are expected to begin to decline aggressively, but 2018 could still be a record revenue year for the NAND market.”

Excluding memory, the remainder of the semiconductor industry grew 9.9 percent last year, largely due to solid unit-sales growth and strong demand across all applications, regions and technologies. Notably, semiconductors used for data processing applications expanded 33.4 percent by year-end. Intel remained the market leader in this category, with sales almost two times larger than second-ranked Samsung.

 

Mobile Semiconductor today announced the introduction of its three new 40nm ULP memory compilers which are available immediately.  The 40nm ULP compilers allow the engineer to create memory designs that maximize battery life while occupying the smallest amount of expensive silicon real estate. Mobile Semiconductor’s silicon-proven embedded memory technology offers these compilers on Taiwan Semiconductor’s 40nm ULP process.

These solutions are available in a range of formats that include:

  • Single Port, High Speed, Ultra Low Power
  • Single Port, Low Voltage (dual supply), Ultra Low Power
  • Single Port, High Speed, Ultra Low Power with a Reduced Mask Set

Founder and CEO Cameron Fisher states, “Mobile Semiconductor is one of the leaders in providing low power solutions.  The new 40nm ULP with flash allows the engineers to build products that may, for example, need periodic security updates and/or benefit from field updates to improve functionality.  Having on-board flash also serves to reduce the chip count on a board which is a further saving.  We support the process version with or without embedded Flash in any variant.”

The ULP process can lower power consumption by up to 30% while at the same time cutting leakage current by as much as 70%.  Overall performance is improved at virtually no cost to the customer.  Further, the high density 0.242 um2bit cell allows for reduced geometries, further reducing costs.

“The 40nm process technology has been around for a few years but the addition of Flash makes it applicable to a wider range of devices”, Fisher continued, “and the price points we are offering our 40nm ULP compilers sets Mobile Semiconductor apart from other memory compiler solutions. We are confident that our new 40nm ULP compliers are the perfect choice for wide range of new designs in the high-performance battery powered products market space.”

Kinetic Solutions, Inc., a full-service process and mechanical contractor for high-technology markets worldwide, announced today the acquisition of Mega Fluid Systems, a global supplier of chemical and slurry delivery equipment to the global semiconductor, LED, pharmaceutical, specialty chemicals and solar/PV industries. According to the details of the agreement, Mega Fluid Systems will operate as a Kinetics company, but will maintain its brand and product line. The acquisition marks another strategic decision in the latest string of investments to strengthen the Kinetics global footprint and position it as a leader in critical process facilities systems services, advanced process equipment and facility management solutions.

Kinetics, now in its 45th year, and Mega share a long legacy, as Mega was originally spun out of Kinetics in 2004. The reacquisition brings the story full circle, and allows Kinetics to offer a comprehensive range of equipment solutions that cover the scope of service and provide global turnkey solutions from feasibility studies through design, construction, construction management, commissioning and closeout.

“We are excited to welcome Mega Fluid Systems home to the Kinetics family,” said Peter Maris, president and CEO of Kinetics. “Adding the Mega portfolio of chemical and slurry delivery systems not only extends our process tool offering, it broadens our global reach and allows us to better serve our customers from R&D to volume manufacturing. Together, with the addition of Wafab and Mega, we are now operating from 20 offices with 1,800 employees worldwide.”

The Mega Fluid Systems product line includes leading-edge chemical, slurry and slurry-blend delivery systems, as well the supporting slurry filtration, metrology and world-class control and SCADA systems.

“As an independent brand for over 20 years, Mega established itself as a trusted supplier of high-performance blend and delivery systems, and built our reputation on innovation and ingenuity,” said Delton Hyatt, president, Mega Fluid Systems. “We are proud to bring that reputation home and be reunited with Kinetics. Together, we are a powerhouse of innovative process and mechanical solutions.”

“The Mega product line is a welcome addition to our existing portfolio of legacy process media distribution systems,” said Steve McGuigan, executive VP and general manager of Kinetics Equipment Solutions Group. “Combined with our chemical process systems and other offerings of facility management and high-purity installation capabilities, this strengthens Kinetics’ ability to serve our customers’ needs globally.”