Category Archives: Semiconductors

UnitySC, a developer of advanced inspection and metrology solutions, today announced it acquired 100% of the shares of HSEB Dresden, GmbH (HSEB), a supplier in optical inspection, review and metrology for high-value semiconductor applications. Following the acquisition, the new entity’s extended line of leading-edge process control solutions will provide a unique and essential inspection and metrology capability to semiconductor manufacturers. Together, the entity’s offerings span substrate, front-end-of-line (FEOL) manufacturing, wafer-level packaging, 3D ICs and power semiconductors. Further, bringing together the two companies will strengthen worldwide customer support for all platforms.

The combined product portfolio and future common platforms of UnitySC and HSEB will support manufacturing of devices used in mobility, automotive and internet of things applications. Combined, these markets are expected to reach a 14% CAGR, far outpacing the 8% growth forecast of the rest of the semiconductor industry. This will require the expansion and construction of new manufacturing facilities with novel equipment lines.

“Thanks to the proprietary technologies developed by both companies, this strategic acquisition further strengthens our capacity for development and innovation, enabling us to be the preferred partner to meet new customer requirements,” said Patrick Leteurtre, president of UnitySC. “Our product portfolio now spans the spectrum required for substrate control of new FEOL, advanced packaging applications such as fan-out wafer-level packaging, embedded dies and through silicon vias, resulting in a value-added market positioning that will further accelerate our growth.”

The new entity is distinguished by its strong semiconductor legacy and focus on technology development. More than 50% of its 140 employees are dedicated to R&D. Its extensive patent portfolio comprises 46 key patent families related to new semiconductor applications, and the management team is deeply rooted in the semiconductor industry. 

UnitySC and HSEB products are already in service in the top five foundries and the top 10 OSATs, supported by an experienced service team. The acknowledgment of its products as tools-of-record by customers working on next-generation processes has generated a growth rate of more than 50% in a market that generally does not exceed 10% CAGR.

At closing, UnitySC paid an undisclosed fixed price for 100% of the shares of HSEB. Jointly, the two entities achieved a turnover of $20 million in 2017, and recorded $22 million in bookings by the end of February 2018.

Everspin Technologies, Inc. (NASDAQ: MRAM), a developer and manufacturer of discrete and embedded magnetoresistive random access memory (MRAM), today announced it has entered into a multi-year worldwide licensing agreement with Alps Electric Co., LTD (Alps), a manufacturer of 3D magnetic sensors. Under the agreement, Alps and Everspin will mutually grant licenses to magnetoresistive-based 3D sensor patent portfolios for magnetoresistive sensor products. The terms of the agreement include an up-front license fee to Everspin as well as future royalties. Specific financial terms of the agreement are not being disclosed.

With an extensive portfolio of over 500 worldwide patents and applications covering its magnetoresistive technology, this agreement expands Everspin’s existing group of memory and sensor licensees. Everspin was recognized by IEEE in its Patent Power 2017 report as having one of the world’s top 20 most valuable patent portfolios for semiconductor manufacturing.

Kevin Conley, President and CEO of Everspin, stated, “Everspin’s magnetoresistive patent portfolio is valuable to a number of significant market applications beyond our core focus in magnetoresistive memory. This agreement demonstrates that value as well as our ability to monetize these assets and generate an additional revenue stream for Everspin.”

An unexpected phenomenon known as zero field switching (ZFS) could lead to smaller, lower-power memory and computing devices than presently possible. The image shows a layering of platinum (Pt), tungsten (W), and a cobalt-iron-boron magnet (CoFeB) sandwiched at the ends by gold (Au) electrodes on a silicon (Si) surface. The gray arrows depict the overall direction of electric current injected into the structure at the back of the gold (Au) contact and coming out the front gold contact pad.

This is an illustration of an unexpected phenomenon known as zero field switching (ZFS) that could lead to smaller, lower-power memory and computing devices than presently possible. The image shows a layering of platinum (Pt), tungsten (W), and a cobalt-iron-boron magnet (CoFeB) sandwiched at the ends by gold (Au) electrodes on a silicon (Si) surface. The gray arrows depict the overall direction of electric current injected into the structure at the back of the gold (Au) contact and coming out the front gold contact pad. The CoFeB layer is a nanometer-thick magnet that stores a bit of data. A "1" corresponds to the CoFeB magnetization pointing up (up arrow), and a "0" represents the magnetization pointing down (down arrow). Credit: Gopman/NIST

This is an illustration of an unexpected phenomenon known as zero field switching (ZFS) that could lead to smaller, lower-power memory and computing devices than presently possible. The image shows a layering of platinum (Pt), tungsten (W), and a cobalt-iron-boron magnet (CoFeB) sandwiched at the ends by gold (Au) electrodes on a silicon (Si) surface. The gray arrows depict the overall direction of electric current injected into the structure at the back of the gold (Au) contact and coming out the front gold contact pad. The CoFeB layer is a nanometer-thick magnet that stores a bit of data. A “1” corresponds to the CoFeB magnetization pointing up (up arrow), and a “0” represents the magnetization pointing down (down arrow). Credit: Gopman/NIST

The CoFeB layer is a nanometer-thick magnet that stores a bit of data. A “1” corresponds to the CoFeB magnetization pointing up (up arrow), and a “0” represents the magnetization pointing down (down arrow). The “0” or “1” can be read both electrically and optically, as the magnetization changes the reflectivity of light shining on the material through another phenomenon known as the magneto-optical Kerr effect (MOKE).

In the device, electric current can flip the data state between 0 and 1. Previous devices of this type have also required a magnetic field or other more complex measures to change the material’s magnetization. Those earlier devices are not very useful for building stable, non-volatile memory devices.

A breakthrough occurred in a research collaboration between The Johns Hopkins University and NIST. The team discovered that they could flip the CoFeB magnetization in a stable fashion between the 0 and 1 states by sending only electric current through the Pt and W metal layers adjacent to the CoFeB nanomagnet. They did not need a magnetic field. This ZFS (zero-field switching) effect was a surprise and had not been theoretically predicted.

In their work, the researchers created a special kind of electric current known as a “spin” current. The electrons that carry electric current possess a property known as spin which can be imagined as a bar magnet pointing in a specific direction through the electron. Increasingly exploited in the emerging field known as “spintronics,” spin current is simply electric current in which the spins of the electrons are pointing in the same direction. As an electron moves through the material, the interaction between its spin and its motion (called a spin-orbit torque, SOT) creates a spin current where electrons with one spin state move perpendicular to the current in one direction and electrons with the opposite spin state move in the opposite direction. The resulting spins that have moved adjacent to the CoFeB magnetic layer exert a torque on that layer, causing its magnetization to be flipped. Without the spin current the CoFeB magnetization is stable against any fluctuations in current and temperature. This unexpected ZFS effect poses new questions to theorists about the underlying mechanism of the observed SOT-induced switching phenomenon.

Details of the spin-orbit torque are illustrated in the diagram. The purple arrows show the spins of the electrons in each layer. The blue curved arrow shows the direction in which spins of that type are being diverted. (For example, in the W layer, electrons with spin to the left in the x-y plane are diverted to move upward toward the CoFeB and the electron spins to the right are diverted to move down toward the Pt.) Note the electron spins in the Pt with spin to the right (in the x-y plane), however, are diverted to move upward toward the W and the electron spins with spin to the left are diverted to move downward toward the Si. This is opposite to the direction the electron spins in the W are moving, and this is due to differences in the SOT experienced by electrons moving through Pt and those moving through W. In fact, it is this difference in the way the electrons move through each of these two conductors that may be important to enabling the unusual ZFS effect.

The research team, including NIST scientists Daniel Gopman, Robert Shull, and NIST guest researcher Yury Kabanov, and The Johns Hopkins University researchers Qinli Ma, Yufan Li and Professor Chia-Ling Chien, report their findings today in Physical Review Letters.

Ongoing investigations by the researchers seek to identify other prospective materials that enable zero-field-switching of a single perpendicular nanomagnet, as well as determining how the ZFS behavior changes for nanomagnets possessing smaller lateral sizes and developing the theoretical foundation for this unexpected switching phenomenon.

Some novel materials that sound too good to be true turn out to be true and good. An emergent class of semiconductors, which could affordably light up our future with nuanced colors emanating from lasers, lamps, and even window glass, could be the latest example.

These materials are very radiant, easy to process from solution, and energy-efficient. The nagging question of whether hybrid organic-inorganic perovskites (HOIPs) could really work just received a very affirmative answer in a new international study led by physical chemists at the Georgia Institute of Technology.

Laser light in the visible range is processed for use in the testing of quantum properties in materials in Carlos Silva's lab at Georgia Tech. Credit: Georgia Tech/Allison Carter

Laser light in the visible range is processed for use in the testing of quantum properties in materials in Carlos Silva’s lab at Georgia Tech. Credit: Georgia Tech/Allison Carter

The researchers observed in an HOIP a “richness” of semiconducting physics created by what could be described as electrons dancing on chemical underpinnings that wobble like a funhouse floor in an earthquake. That bucks conventional wisdom because established semiconductors rely upon rigidly stable chemical foundations, that is to say, quieter molecular frameworks, to produce the desired quantum properties.

“We don’t know yet how it works to have these stable quantum properties in this intense molecular motion,” said first author Felix Thouin, a graduate research assistant at Georgia Tech. “It defies physics models we have to try to explain it. It’s like we need some new physics.”

Quantum properties surprise

Their gyrating jumbles have made HOIPs challenging to examine, but the team of researchers from a total of five research institutes in four countries succeeded in measuring a prototypical HOIP and found its quantum properties on par with those of established, molecularly rigid semiconductors, many of which are graphene-based.

“The properties were at least as good as in those materials and may be even better,” said Carlos Silva, a professor in Georgia Tech’s School of Chemistry and Biochemistry. Not all semiconductors also absorb and emit light well, but HOIPs do, making them optoelectronic and thus potentially useful in lasers, LEDs, other lighting applications, and also in photovoltaics.

The lack of molecular-level rigidity in HOIPs also plays into them being more flexibly produced and applied.

Silva co-led the study with physicist Ajay Ram Srimath Kandada. Their team published the results of their study on two-dimensional HOIPs on March 8, 2018, in the journal Physical Review Materials. Their research was funded by EU Horizon 2020, the Natural Sciences and Engineering Research Council of Canada, the Fond Québécois pour la Recherche, the Research Council of Canada, and the National Research Foundation of Singapore.

The ‘solution solution’

Commonly, semiconducting properties arise from static crystalline lattices of neatly interconnected atoms. In silicon, for example, which is used in most commercial solar cells, they are interconnected silicon atoms. The same principle applies to graphene-like semiconductors.

“These lattices are structurally not very complex,” Silva said. “They’re only one atom thin, and they have strict two-dimensional properties, so they’re much more rigid.”

“You forcefully limit these systems to two dimensions,” said Srimath Kandada, who is a Marie Curie International Fellow at Georgia Tech and the Italian Institute of Technology. “The atoms are arranged in infinitely expansive, flat sheets, and then these very interesting and desirable optoelectronic properties emerge.”

These proven materials impress. So, why pursue HOIPs, except to explore their baffling physics? Because they may be more practical in important ways.

“One of the compelling advantages is that they’re all made using low-temperature processing from solutions,” Silva said. “It takes much less energy to make them.”

By contrast, graphene-based materials are produced at high temperatures in small amounts that can be tedious to work with. “With this stuff (HOIPs), you can make big batches in solution and coat a whole window with it if you want to,” Silva said.

Funhouse in an earthquake

For all an HOIP’s wobbling, it’s also a very ordered lattice with its own kind of rigidity, though less limiting than in the customary two-dimensional materials.

“It’s not just a single layer,” Srimath Kandada said. “There is a very specific perovskite-like geometry.” Perovskite refers to the shape of an HOIPs crystal lattice, which is a layered scaffolding.

“The lattice self-assembles,” Srimath Kandada said, “and it does so in a three-dimensional stack made of layers of two-dimensional sheets. But HOIPs still preserve those desirable 2D quantum properties.”

Those sheets are held together by interspersed layers of another molecular structure that is a bit like a sheet of rubber bands. That makes the scaffolding wiggle like a funhouse floor.

“At room temperature, the molecules wiggle all over the place. That disrupts the lattice, which is where the electrons live. It’s really intense,” Silva said. “But surprisingly, the quantum properties are still really stable.”

Having quantum properties work at room temperature without requiring ultra-cooling is important for practical use as a semiconductor.

Going back to what HOIP stands for — hybrid organic-inorganic perovskites – this is how the experimental material fit into the HOIP chemical class: It was a hybrid of inorganic layers of a lead iodide (the rigid part) separated by organic layers (the rubber band-like parts) of phenylethylammonium (chemical formula (PEA)2PbI4).

The lead in this prototypical material could be swapped out for a metal safer for humans to handle before the development of an applicable material.

Electron choreography

HOIPs are great semiconductors because their electrons do an acrobatic square dance.

Usually, electrons live in an orbit around the nucleus of an atom or are shared by atoms in a chemical bond. But HOIP chemical lattices, like all semiconductors, are configured to share electrons more broadly.

Energy levels in a system can free the electrons to run around and participate in things like the flow of electricity and heat. The orbits, which are then empty, are called electron holes, and they want the electrons back.

“The hole is thought of as a positive charge, and of course, the electron has a negative charge,” Silva said. “So, hole and electron attract each other.”

The electrons and holes race around each other like dance partners pairing up to what physicists call an “exciton.” Excitons act and look a lot like particles themselves, though they’re not really particles.

Hopping biexciton light

In semiconductors, millions of excitons are correlated, or choreographed, with each other, which makes for desirable properties, when an energy source like electricity or laser light is applied. Additionally, excitons can pair up to form biexcitons, boosting the semiconductor’s energetic properties.

“In this material, we found that the biexciton binding energies were high,” Silva said. “That’s why we want to put this into lasers because the energy you input ends up to 80 or 90 percent as biexcitons.”

Biexcitons bump up energetically to absorb input energy. Then they contract energetically and pump out light. That would work not only in lasers but also in LEDs or other surfaces using the optoelectronic material.

“You can adjust the chemistry (of HOIPs) to control the width between biexciton states, and that controls the wavelength of the light given off,” Silva said. “And the adjustment can be very fine to give you any wavelength of light.”

That translates into any color of light the heart desires.

The ConFab — an executive invitation-only conference now in its 14th year — brings together influential decision-makers from all parts of the semiconductor supply chain for three days of thought-provoking talks and panel discussions, networking events and select, pre-arranged breakout business meetings.

In the 2018 program, we will take a close look at the new applications driving the semiconductor industry, the technology that will be required at the device and process level to meet new demands, and the kind of strategic collaboration that will be required. It is this combination of business, technology and social interactions that make the conference so unique and so valuable. Browse this slideshow for a look at this year’s speakers, keynotes, panel discussions, and special guests.

Visit The ConFab’s website for a look at the full, three-day agenda for this year’s event.

KEYNOTE: How AI is Driving the New Semiconductor Era

Rama Divakaruni_June_2014presented by Rama Divakaruni, Advanced Process Technology Research Lead, IBM

The exciting results of AI have been fueled by the exponential growth in data, the widespread availability of increased compute power, and advances in algorithms. Continued progress in AI – now in its infancy – will require major innovation across the computing stack, dramatically affecting logic, memory, storage, and communication. Already the influence of AI is apparent at the system-level by trends such as heterogeneous processing with GPUs and accelerators, and memories with very high bandwidth connectivity to the processor. The next stages will involve elements which exploit characteristics that benefit AI workloads, such as reduced precision and in-memory computation. Further in time, analog devices that can combine memory and computation, and thus minimize the latency and energy expenditure of data movement, offer the promise of orders of magnitude power-performance improvements for AI workloads. Thus, the future of AI will depend instrumentally on advances in devices and packaging, which in turn will rely fundamentally on materials innovations.

Broadcom Limited (NASDAQ: AVGO) (“Broadcom”) today announced that it has withdrawn and terminated its offer to acquire Qualcomm Incorporated (NASDAQ: QCOM) (“Qualcomm”) and has withdrawn its slate of independent director nominees for Qualcomm’s 2018 Annual Meeting of Stockholders. The Trump administration issued a Presidential Order this week to stop the acquisition.

Broadcom today issued the following statement:

“Although we are disappointed with this outcome, Broadcom will comply with the Order. Broadcom will continue to move forward with its redomiciliation process and will hold its Special Meeting of Stockholders as planned on March 23, 2018.

Broadcom’s Board of Directors and management team sincerely appreciate the significant support we received from the Qualcomm and Broadcom stockholders throughout this process.

Broadcom thanks the independent nominees who stood for election to the Qualcomm board, not only for their time and effort but also for their unwavering commitment to act in the best interests of Qualcomm stockholders.

Broadcom appreciates the following statement from U.S. Treasury Secretary and CFIUS chair Steven Mnuchin on March 12: “This decision is based on the facts and national security sensitivities related to this particular transaction only and is not intended to make any other statement about Broadcom or its employees, including its thousands of hard working and highly skilled U.S. employees.”

A research team from Tokyo Institute of Technology (Tokyo Tech) and Waseda University have successfully produced high-quality thin film monocrystalline silicon with a reduced crystal defect density down to the silicon wafer level at a growth rate that is more than 10 times higher than before. In principle, this method can improve the raw material yield to nearly 100%. Therefore, it can be expected that this technology will make it possible to drastically reduce manufacturing costs while maintaining the power generation efficiency of monocrystalline silicon solar cells, which are used in most high efficient solar cells.

This is the monocrystalline Si thin film peeled off using adhesive tape. Credit: CrystEngComm

This is the monocrystalline Si thin film peeled off using adhesive tape. Credit: CrystEngComm

Background

Solar power generation is a method of generating power where solar light energy is converted directly into electricity using a device called a “solar cell.” Efficiently converting the solar energy that is constantly striking the earth to generate electricity is an effective solution to the problem of global warming related to CO2emissions. By making the monocrystalline Si solar cells that are at the core of solar power generation systems thinner, it is possible to greatly reduce raw material costs, which account for about 40% of the current module, and by making them flexible and lighter, usage can be expected to expand and installation costs can be expected to decrease.

In addition, as a method of reducing manufacturing cost, thin-film monocrystalline Si solar cells that use porous silicon (Double Porous Silicon Layer: DPSL) via lift-off are attracting attention as having a competitive edge in the future.

Among the technical challenges related to monocrystalline Si solar cells using lift-off are 1) the formation of a high-quality thin film Si at the Si wafer level, 2) achieving a porous structure that can easily be lifted off (peeled off), 3) improving the growth rate and Si raw material yield (necessary equipment costs are determined by the growth rate), and 4) being able to use the substrate after lift-off without any waste.

In order to overcome challenge 1), it was necessary to clarify the main factors that determine the quality of thin film crystals grown on porous silicon, and to develop a technique for controlling these.

Overview of research achievement

A joint research team consisting of Professor Manabu Ihara and Assistant Professor Kei Hasegawa of the Tokyo Tech, and Professor Suguru Noda of Waseda University has developed a high-quality thin film monocrystalline silicon with a thickness of about 10 μm and a reduced crystal defect density down to the silicon wafer level at a growth rate that is more than 10 times higher than before. First, double-layer nano-order porous silicon is generated on the surface of a monocrystalline wafer using an electrochemical technique. Next, the surface was smoothed to a roughness of 0.2 to 0.3 nm via a unique zone heating recrystallization method (ZHR method), and this substrate was used for high-speed growth to obtain a moonocrystalline thin film with high crystal quality. The grown film can easily be peeled off using the double-layer porous Si layer, and the substrate can be reused or used as an evaporation source for thin film growth, which greatly reduces material loss. When the surface roughness of the underlying substrate is reduced by changing the ZHR method conditions, the defect density of the thin film crystal that was grown decreased, and the team eventually succeeded in reducing it to the Si wafer level of about 1/10th. This quantitatively shows that a surface roughness in the range of only 0.1-0.2 nm (level of atoms to several tens of layers) has an important impact on the formation of crystal defects, which is also of interest as a crystal growth mechanism.

The film formation rate and the conversion rate of the Si source to the thin film Si are bottlenecks in the production of thin-film monocrystalline Si. With chemical vapor deposition (CVD), which is mainly used for epitaxy, the maximum film forming rate is a few μm/h and the yield is about 10%. At the Noda Laboratory of Waseda University, instead of the regular physical vapor deposition (PVD) where raw Si is vaporized at around its melting point of 1414 ?C, by vaporizing the raw Si at much higher temperature of >2000 ?C, a rapid evaporation method (RVD) was developed with a high Si vapor pressure capable of depositing Si at 10 μm/min.

It was found that the ZHR technology developed this time can resolves technical problems and drastically reduce the manufacturing cost of the lift-off process.

Future development

Based on the results of this study, not only did the team discover the main factors for improving the quality of crystals during rapid growth on porous silicon used for the lift-off process, they succeeded in controlling these. In the future, measurement of the carrier lifetime of the thin film, which is directly connected to the performances of solar cells, and fabrication of solar cells will be carried out with the goal of putting the technology into practical use. The use of this Si thin films as low cost bottom cells in tandem type solar cells with an efficiency of over 30% will also be considered.

The results are published in the Royal Society of Chemistry (RSC) journal CrystEngComm and will be featured on the inside front cover of the issue.

Synopsys, Inc. (Nasdaq: SNPS) today announced that Dr. John Rogers, principal engineer of imaging optics in the Optical Solutions Group at Synopsys, has been promoted to Fellow by SPIE, the international society for optics and photonics. Each year, SPIE recognizes distinguished individuals in the field of optics and optoelectronics through its Fellows program. The promotion recognizes Rogers’ technical achievements in optical design and engineering, as well as his extensive service and contributions to the optics community. Rogers will formally accept the honor at the SPIE Optics + Photonics Conference in San Diego, Calif. in August 2018.

Rogers is a recognized authority in the fields of optical design and aberration theory, particularly for optical systems with rotationally nonsymmetric and freeform elements. He was an early advocate of vector aberration theory, now known as nodal aberration theory. His 1986 paper “Practical Tilted Mirror Systems” showed for the first time that a tilted and/or decentered optical system could be arranged to have aberration patterns that mimic those of a rotationally symmetric system. He also has designed a wide range of significant and complex optical systems, including three-dimensional imaging for clinical dental applications, ophthalmic surgical systems, biocular and binocular systems, FLIR systems, and head-up and helmet-mounted displays.

Rogers has given extensive service to the optics community for educational activities and support for several technical societies. Currently, he is a reviewer for JOSA A, Optics Express and Optics Letters. In 2014 and 2017, he was co-chair for the International Optical Design Conference. In 2016, he was a guest speaker for the Optical Society of Southern California, and from 1992 to 1997, he was convener for the ISO TC172 SC1 WG2, which produced the ISO 10110 optical drawing standard. From 1984 to 1988, he was assistant professor at the Institute of Optics, University of Rochester.

Rogers has also given significant service to SPIE. He has served as a conference chair, committee member and contributor to many SPIE conferences. He is also a reviewer for Optical Engineering and has served as a guest editor as well. His talks at various SPIE conferences have often attracted large audiences.

He has authored or co-authored 37 journal and conference papers, has contributed articles for two books and holds 13 U.S. patents. He received a Ph.D. in Optics from University of Arizona, an M.S. in Optics from University of Arizona and a B.S. in Mathematics from Virginia Polytechnic Institute.

“John’s pioneering contributions to design strategies for tilted, decentered and freeform surfaces has significantly advanced the field of optical design and has helped to drive the development of advanced design features in the optical software that Synopsys supplies,” said George Bayz, vice president of Synopsys’ Optical Solutions Group. “We congratulate John on his many achievements and on his election to SPIE Fellow.”

Scientists of Karlsruhe Institute of Technology (KIT) have succeeded in monitoring the growth of minute gallium arsenide wires. Their findings do not only provide for a better understanding of growth, they also enable approaches to customizing nanowires with special properties for certain applications in the future. Gallium arsenide is a semiconductor material widely used in infrared remote controls, high-frequency technology for mobile phones, conversion of electric signals into light in glass-fiber cables, and solar cells for space technology. The results were presented in the journal Nano Letters by the team of Philipp Schroth of KIT and the University of Siegen.

For wire production, the scientists used the self-catalyzed vapor-liquid-solid process (VLS process). Minute liquid gallium droplets are deposited on a hot silicon crystal of around 600°C in temperature. Then, this wafer is subjected to directed beams of gallium atoms and arsenic molecules that dissolve in the gallium droplets. After some time, nanowires start to grow below the droplets that act as catalysts for the longitudinal growth of the wires. “This process is quite well established, but it has been impossible so far to specifically control it. To achieve this, the details of growth have to be understood first,” co-author Ludwig Feigl of KIT says.

For the studies, the team used a portable chamber specifically designed by KIT’s Institute for Photon Science and Synchrotron Radiation (IPS) with funds of the Federal Ministry of Education and Research (BMBF). The researchers installed the chamber in the research light source PETRA III of the German Electron Synchrotron (DESY) and took X-ray pictures every minute to determine the structure and diameter of the growing nanowires. Finally, they measured the fully grown nanowires with an electron microscope. “We found that growth of nanowires is not only caused by the VLS process, but also by a second component that was observed and quantified directly for the first time in this experiment. This so-called side-wall growth makes the wires gain width,” says Philipp Schroth. In the course of the growth process, the gallium droplets become larger due to constant gallium vapor deposition. This has a far-reaching impact. “As the droplet size changes, the contact angle between the droplet and the surface of the wires changes as well. In certain cases, this causes the wire to suddenly continue growing with another crystal structure,” Feigl says. This change is of relevance to applications, as the structure and shape of the nanowires considerably affect the properties of the resulting material.

One of the problems for Javier Vela and the chemists in his Iowa State University research group was that a toxic material worked so well in solar cells.

And so any substitute for the lead-containing perovskites used in some solar cells would have to really perform. But what could they find to replace the perovskite semiconductors that have been so promising and so efficient at converting sunlight into electricity?

What materials could produce semiconductors that worked just as well, but were safe and abundant and inexpensive to manufacture?

“Semiconductors are everywhere, right?” Vela said. “They’re in our computers and our cell phones. They’re usually in high-end, high-value products. While semiconductors may not contain rare materials, many are toxic or very expensive.”

Vela, an Iowa State associate professor of chemistry and an associate of the U.S. Department of Energy’s Ames Laboratory, directs a lab that specializes in developing new, nanostructured materials. While thinking about the problem of lead in solar cells, he found a conference presentation by Massachusetts Institute of Technology researchers that suggested possible substitutes for perovskites in semiconductors.

Vela and Iowa State graduate students Bryan Rosales and Miles White decided to focus on sodium-based alternatives and started an 18-month search for a new kind of semiconductor. The work was supported by Vela’s five-year, $786,017 CAREER grant from the National Science Foundation. CAREER grants are the foundation’s most prestigious awards for early career faculty.

They came up with a compound that features sodium, which is cheap and abundant; bismuth, which is relatively scarce but is overproduced during the mining of other metals and is cheap; and sulfur, the fifth most common element on Earth. The researchers report their discovery in a paper recently published online by the Journal of the American Chemical Society.

The paper’s subtitle is a good summary of their work: “Toward Earth-Abundant, Biocompatible Semiconductors.”

“Our synthesis unlocks a new class of low-cost and environmentally friendly ternary (three-part) semiconductors that show properties of interest for applications in energy conversion,” the chemists wrote in their paper.

In fact, Rosales is working to create solar cells that use the new semiconducting material.

Vela said variations in synthesis – changing reaction temperature and time, choice of metal ion precursors, adding certain ligands – allows the chemists to control the material’s structure and the size of its nanocrystals. And that allows researchers to change and fine tune the material’s properties.

Several of the material’s properties are already ideal for solar cells: The material’s band gap – the amount of energy required for a light particle to knock an electron loose – is ideal for solar cells. The material, unlike other materials used in solar cells, is also stable when exposed to air and water.

So, the chemists think they have a material that will work well in solar cells, but without the toxicity, scarcity or costs.

“We believe the experimental and computational results reported here,” they wrote in their paper, “will help advance the fundamental study and exploration of these and similar materials for energy conversion devices.”