Category Archives: Semiconductors

Silicon has long been the go-to material in the world of microelectronics and semiconductor technology. But silicon still faces limitations, particularly with scalability for power applications. Pushing semiconductor technology to its full potential requires smaller designs at higher energy density.

“One of the largest shortcomings in the world of microelectronics is always good use of power: Designers are always looking to reduce excess power consumption and unnecessary heat generation,” said Gregg Jessen, principal electronics engineer at the Air Force Research Laboratory. “Usually, you would do this by scaling the devices. But the technologies in use today are already scaled close to their limits for the operating voltage desired in many applications. They are limited by their critical electric field strength.”

This is a false-color, plan-view SEM image of a lateral gallium oxide field effect transistor with an optically defined gate. From near (bottom) to far (top): the source, gate, and drain electrodes. Metal is shown in yellow and orange, dark blue represents dielectric material, and lighter blue denotes the gallium oxide substrate. Credit: AFRL Sensors Directorate at WPAFB, Ohio, US

This is a false-color, plan-view SEM image of a lateral gallium oxide field effect transistor with an optically defined gate. From near (bottom) to far (top): the source, gate, and drain electrodes. Metal is shown in yellow and orange, dark blue represents dielectric material, and lighter blue denotes the gallium oxide substrate. Credit: AFRL Sensors Directorate at WPAFB, Ohio, US

Transparent conductive oxides are a key emerging material in semiconductor technology, offering the unlikely combination of conductivity and transparency over the visual spectrum. One conductive oxide in particular has unique properties that allow it to function well in power switching: Ga2O3, or gallium oxide, a material with an incredibly large bandgap.

In their article published this week in Applied Physics Letters, from AIP Publishing, authors Masataka Higashiwaki and Jessen outline a case for producing microelectronics using gallium oxide. The authors focus on field effect transistors (FETs), devices that could greatly benefit from gallium oxide’s large critical electric field strength. a quality which Jessen said could enable the design of FETs with smaller geometries and aggressive doping profiles that would destroy any other FET material.

The material’s flexibility for various applications is due to its broad range of possible conductivities — from highly conductive to very insulating — and high-breakdown-voltage capabilities due to its electric field strength. Consequently, gallium oxide can be scaled to an extreme degree. Large-area gallium oxide wafers can also be grown from the melt, lowering manufacturing costs.

“The next application for gallium oxide will be unipolar FETs for power supplies,” Jessen said. “Critical field strength is the key metric here, and it results in superior energy density capabilities. The critical field strength of gallium oxide is more than 20 times that of silicon and more than twice that of silicon carbide and gallium nitride.”

The authors discuss manufacturing methods for Ga2O3 wafers, the ability to control electron density, and the challenges with hole transport. Their research suggests that unipolar Ga2O3 devices will dominate. Their paper also details Ga2O3 applications in different types of FETs and how the material can be of service in high-voltage, high-power and power-switching applications.

“From a research perspective, gallium oxide is really exciting,” Jessen said. “We are just beginning to understand the full potential of these devices for several applications, and it’s a great time to be involved in the field.”

The Semiconductor Industry Association (SIA), representing U.S. leadership in semiconductor manufacturing, design, and research, today announced the global semiconductor industry posted sales totaling $412.2 billion in 2017, the industry’s highest-ever annual sales and an increase of 21.6 percent compared to the 2016 total. Global sales for the month of December 2017 reached $38.0 billion, an increase of 22.5 percent over the December 2016 total and 0.8 percent more than the previous month’s total. Fourth-quarter sales of $114.0 billion were 22.5 percent higher than the total from the fourth quarter of 2016 and 5.7 percent more than the third quarter of 2017. Global sales during the fourth quarter of 2017 and during December 2017 were the industry’s highest-ever quarterly and monthly sales, respectively. All monthly sales numbers are compiled by the World Semiconductor Trade Statistics (WSTS) organization and represent a three-month moving average.

Worldwide semiconductor revenues, year-to-year percent change

Worldwide semiconductor revenues, year-to-year percent change

“As semiconductors have become more heavily embedded in an ever-increasing number of products – from cars to coffee makers – and nascent technologies like artificial intelligence, virtual reality, and the Internet of Things have emerged, global demand for semiconductors has increased, leading to landmark sales in 2017 and a bright outlook for the long term,” said John Neuffer, SIA president and CEO. “The global market experienced across-the-board growth in 2017, with double-digit sales increases in every regional market and nearly all major product categories. We expect the market to grow more modestly in 2018.”

Several semiconductor product segments stood out in 2017. Memory was the largest semiconductor category by sales with $124.0 billion in 2017, and the fastest growing, with sales increasing 61.5 percent. Within the memory category, sales of DRAM products increased 76.8 percent and sales of NAND flash products increased 47.5 percent. Logic ($102.2 billion) and micro-ICs ($63.9 billion) – a category that includes microprocessors – rounded out the top three product categories in terms of total sales. Other fast-growing product categories in 2017 included rectifiers (18.3 percent), diodes (16.4 percent), and sensors and actuators (16.2 percent). Even without sales of memory products, sales of all other products combined increased by nearly 10 percent in 2017.

Annual sales increased substantially across all regions: the Americas (35.0 percent), China (22.2 percent), Europe (17.1 percent), Asia Pacific/All Other (16.4 percent), and Japan (13.3 percent). The Americas market also led the way in growth for the month of December 2017, with sales up 41.4 percent year-to-year and 2.1 percent month-to-month. Next were Europe (20.2 percent/-1.6 percent), China (18.1 percent/1.0 percent), Asia Pacific/All Other (17.4 percent/0.2 percent), and Japan (14.0 percent/0.9 percent).

“A strong semiconductor industry is foundational to America’s economic strength, national security, and global technology leadership,” said Neuffer. “We urge Congress and the Trump Administration to enact polices in 2018 that promote U.S. innovation and allow American businesses to compete on a more level playing field with our counterparts overseas. We look forward to working with policymakers in the year ahead to further strengthen the semiconductor industry, the broader tech sector, and our economy.”

First came the switch. Then the transistor. Now another innovation stands to revolutionize the way we control the flow of electrons through a circuit: vanadium dioxide (VO2). A key characteristic of this compound is that it behaves as an insulator at room temperature but as a conductor at temperatures above 68°C. This behavior – also known as metal-insulator transition – is being studied in an ambitious EU Horizon 2020 project called Phase-Change Switch. EPFL was chosen to coordinate the project following a challenging selection process.

The project will last until 2020 and has been granted €3.9 million of EU funding. Due to the array of high-potential applications that could come out of this new technology, the project has attracted two major companies – Thales of France and the Swiss branch of IBM Research – as well as other universities, including Max-Planck-Gesellschaft in Germany and Cambridge University in the UK. Gesellschaft für Angewandte Mikro- und Optoelektronik (AMO GmbH), a spin-off of Aachen University in Germany, is also taking part in the research.

Scientists have long known about the electronic properties of VO2 but haven’t been able to explain them until know. It turns out that its atomic structure changes as the temperature rises, transitioning from a crystalline structure at room temperature to a metallic one at temperatures above 68°C. And this transition happens in less than a nanosecond – a real advantage for electronics applications. “VO2 is also sensitive to other factors that could cause it to change phases, such as by injecting electrical power, optically, or by applying a THz radiation pulse,” says Adrian Ionescu, the EPFL professor who heads the school’s Nanoelectronic Devices Laboratory (Nanolab) and also serves as the Phase-Change Switch project coordinator.

The challenge: reaching higher temperatures

However, unlocking the full potential of VO2 has always been tricky because its transition temperature of 68°C is too low for modern electronic devices, where circuits must be able to run flawlessly at 100°C. But two EPFL researchers – Ionescu from the School of Engineering (STI) and Andreas Schüler from the School of Architecture, Civil and Environmental Engineering (ENAC) – may have found a solution to this problem, according to their joint research published in Applied Physics Letters in July 2017. They found that adding germanium to VO2 film can lift the material’s phase change temperature to over 100°C.

Even more interesting findings from the Nanolab – especially for radiofrequency applications – were published in IEEE Access on 2 February 2018. For the first time ever, scientists were able to make ultra-compact, modulable frequency filters. Their technology also uses VO2 and phase-change switches, and is particularly effective in the frequency range crucial for space communication systems (the Ka band, with programmable frequency modulation between 28.2 and 35 GHz).

Neuromorphic processors and autonomous vehicles

These promising discoveries are likely to spur further research into applications for VO2 in ultra-low-power electronic devices. In addition to space communications, other fields could include neuromorphic computing and high-frequency radars for self-driving cars.

Researchers at the University of Illinois at Chicago describe a new technique for precisely measuring the temperature and behavior of new two-dimensional materials that will allow engineers to design smaller and faster microprocessors. Their findings are reported in the journal Physical Review Letters.

Newly developed two-dimensional materials, such as graphene — which consists of a single layer of carbon atoms — have the potential to replace traditional microprocessing chips based on silicon, which have reached the limit of how small they can get. But engineers have been stymied by the inability to measure how temperature will affect these new materials, collectively known as transition metal dichalcogenides, or TMDs.

Using scanning transmission electron microscopy combined with spectroscopy, researchers at UIC were able to measure the temperature of several two-dimensional materials at the atomic level, paving the way for much smaller and faster microprocessors. They were also able to use their technique to measure how the two-dimensional materials would expand when heated.

“Microprocessing chips in computers and other electronics get very hot, and we need to be able to measure not only how hot they can get, but how much the material will expand when heated,” said Robert Klie, professor of physics at UIC and corresponding author of the paper. “Knowing how a material will expand is important because if a material expands too much, connections with other materials, such as metal wires, can break and the chip is useless.”

Traditional ways to measure temperature don’t work on tiny flakes of two-dimensional materials that would be used in microprocessors because they are just too small. Optical temperature measurements, which use a reflected laser light to measure temperature, can’t be used on TMD chips because they don’t have enough surface area to accommodate the laser beam.

“We need to understand how heat builds up and how it is transmitted at the interface between two materials in order to build efficient microprocessors that work,” said Klie.

Klie and his colleagues devised a way to take temperature measurements of TMDs at the atomic level using scanning transition electron microscopy, which uses a beam of electrons transmitted through a specimen to form an image.

“Using this technique, we can zero in on and measure the vibration of atoms and electrons, which is essentially the temperature of a single atom in a two-dimensional material,” said Klie. Temperature is a measure of the average kinetic energy of the random motions of the particles, or atoms that make up a material. As a material gets hotter, the frequency of the atomic vibration gets higher. At absolute zero, the lowest theoretical temperature, all atomic motion stops.

Klie and his colleagues heated microscopic “flakes” of various TMDs inside the chamber of a scanning transmission electron microscope to different temperatures and then aimed the microscope’s electron beam at the material. Using a technique called electron energy-loss spectroscopy, they were able to measure the scattering of electrons off the two-dimensional materials caused by the electron beam. The scattering patterns were entered into a computer model that translated them into measurements of the vibrations of the atoms in the material – in other words, the temperature of the material at the atomic level.

“With this new technique, we can measure the temperature of a material with a resolution that is nearly 10 times better than conventional methods,” said Klie. “With this new approach, we can design better electronic devices that will be less prone to overheating and consume less power.”

The technique can also be used to predict how much materials will expand when heated and contract when cooled, which will help engineers build chips that are less prone to breaking at points where one material touches another, such as when a two-dimensional material chip makes contact with a wire.

“No other method can measure this effect at the spatial resolution we report,” said Klie. “This will allow engineers to design devices that can manage temperature changes between two different materials at the nano-scale level.”

Driven by the need for intelligent connected devices in industrial and commercial applications, the number of connected Internet of Things (IoT) devices globally will grow to more than 31 billion in 2018, according to new analysis from business information provider IHS Markit (Nasdaq: INFO). The commercial and industrial sector, powered by building automation, industrial automation and lighting, is forecast to account for about half of all new connected devices between 2018 and 2030.

“The IoT is not a recent phenomenon, but what is new is it’s now working hand in hand with other transformative technologies like artificial intelligence and the cloud,” said Jenalea Howell, research director for IoT connectivity and smart cities at IHS Markit. “This is fueling the convergence of verticals such as industrial IoT, smart cities and buildings, and the connected home, and it’s increasing competitiveness.”

In its latest IoT Trend Watch report, IHS Markit identifies four key drivers and the trends that will impact the IoT this year and beyond:

Innovation and competitiveness

  • The IoT opportunity has attracted numerous duplicative and overlapping wireless solutions such as Bluetooth, Wi-Fi, 5G, NB-IoT, LoRa and Sigfox. Standards consolidation lies ahead, but confusion and fragmentation will dominate in the near term.
  • Enterprises are leveraging the location of data as a competitive advantage — and as a result, a hybrid approach to cloud and data center management is taking hold. More and more companies will employ both on-premises data centers and off-premises cloud services to manage their IT infrastructure.

Business models

  • 5G builds upon earlier investments in M2M (machine-to-machine) and traditional IoT applications, enabling significant increases in economies of scale that drive adoption and utilization across all sectors of industry. Improved low-power requirements, the ability to operate on licensed and unlicensed spectrum, and better coverage will drive significantly lower costs across the IoT.
  • Cellular IoT gateways, which facilitate WAN connectivity, will be integral to edge computing deployments. 2018 will bring increased focus on compute capabilities and enhanced security for cellular IoT gateways.

Standardization and security

  • Cybersecurity is a leading concern for IoT adopters. IoT deployments face critical cybersecurity risks because there are potentially many more IoT devices to secure compared to traditional IT infrastructure devices, presenting increased risk to traditional communications and computing systems, as well as physical health and safety.
  • Despite the promise it holds, blockchain — a technology for securely storing and transferring data — is not a panacea. Initially, IoT applications for blockchain technology will focus on asset tracking and management.

Wireless technology innovation

  • IoT platforms are becoming more integrated. Currently, there are more than 400 IoT platform providers. Many vendors are using integration to compete more effectively, providing highly integrated functionality for IoT application developers and adopters.
  • Significant innovation will occur when IoT app developers can leverage data from myriad deployed sensors, machines and data stores. A key inflection point for the IoT will be the gradual shift from the current “Intranets of Things” deployment model to one where data can be exposed, discovered, entitled and shared with third-party IoT application developers.

IHS Markit provides insight and analysis for more than 25 connectivity technologies in 34 application segments used for the IoT.

Air Products (NYSE: APD) today announced it has been awarded the industrial gases supply for Samsung Electronics’ second semiconductor fab in Xi’an, Shaanxi Province, western China.

The Xi’an fabrication line, within the Xi’an High-tech Zone (XHTZ), represents one of Samsung’s largest overseas investments and one of the most advanced fabs in China. It produces three-dimensional (3D) vertical NAND (V-NAND) flash memory chips for a wide range of applications, including embedded NAND storage, solid state drives, mobile devices, and other consumer electronics products.

Air Products has been supporting this project since 2014 from a large site housing two large air separation units (ASUs), a hydrogen plant and a bulk specialty gas delivery system. Under the new award, Air Products will expand its site by building several large ASUs, hydrogen and compressed dry air plants, and a bulk specialty gas supply yard to supply ultra-high purity nitrogen, oxygen, argon, hydrogen and compressed dry air to the new fab, which is scheduled to be operational in 2019.

“Samsung is a strategic and longstanding customer for Air Products. It is our honor to have their continued confidence and again be selected to support their business growth and this important project in western China,” said Kyo-Yung Kim, president of Air Products Korea, who also oversees the company’s electronics investment in the XHTZ. “We have been supplying the project with proven safety, reliability and operational excellence. This latest investment further reinforces our global leading position and commitment to serving our valued customer, as well as the broader semiconductor and electronics industries.”

Continuing to build its strong relationship with Samsung Electronics, Air Products also recently announced the next phases of expansion to build two more nitrogen plants serving the customer’s giga fab in Pyeongtaek City, Gyeonggi Province, South Korea.

A leading integrated gases supplier, Air Products has been serving the global electronics industry for more than 40 years, supplying industrial gases safely and reliably to most of the world’s largest technology companies. Air Products is working with these industry leaders to develop the next generation of semiconductors and displays for tablets, computers and mobile devices.

The end of the silicon age has begun. As computer chips approach the physical limits of miniaturization and power-hungry processors drive up energy costs, scientists are looking to a new crop of exotic materials that could foster a new generation of computing devices that promise to push performance to new heights while skimping on energy consumption.

Unlike current silicon-based electronics, which shed most of the energy they consume as waste heat, the future is all about low-power computing. Known as spintronics, this technology relies on a quantum physical property of electrons — up or down spin — to process and store information, rather than moving them around with electricity as conventional computing does.

On the quest to making spintronic devices a reality, scientists at the University of Arizona are studying an exotic crop of materials known as transition metal dichalcogenides, or TMDs. TMDs have exciting properties lending themselves to new ways of processing and storing information and could provide the basis of future transistors and photovoltaics — and potentially even offer an avenue toward quantum computing.

For example, current silicon-based solar cells convert realistically only about 25 percent of sunlight into electricity, so efficiency is an issue, says Calley Eads, a fifth-year doctoral student in the UA’s Department of Chemistry and Biochemistry who studies some of the properties of these new materials. “There could be a huge improvement there to harvest energy, and these materials could potentially do this,” she says.

There is a catch, however: Most TMDs show their magic only in the form of sheets that are very large, but only one to three atoms thin. Such atomic layers are challenging enough to manufacture on a laboratory scale, let alone in industrial mass production.

Many efforts are underway to design atomically thin materials for quantum communication, low-power electronics and solar cells, according to Oliver Monti, a professor in the department and Eads’ adviser. Studying a TMD consisting of alternating layers of tin and sulfur, his research team recently discovered a possible shortcut, published in the journal Nature Communications.

“We show that for some of these properties, you don’t need to go to the atomically thin sheets,” he says. “You can go to the much more readily accessible crystalline form that’s available off the shelf. Some of the properties are saved and survive.”

Understanding electron movement

This, of course, could dramatically simplify device design.

“These materials are so unusual that we keep discovering more and more about them, and they are revealing some incredible features that we think we can use, but how do we know for sure?” Monti says. “One way to know is by understanding how electrons move around in these materials so we can develop new ways of manipulating them — for example, with light instead of electrical current as conventional computers do.”

To do this research, the team had to overcome a hurdle that never had been cleared before: figure out a way to “watch” individual electrons as they flow through the crystals.

“We built what is essentially a clock that can time moving electrons like a stopwatch,” Monti says. “This allowed us to make the first direct observations of electrons move in crystals in real time. Until now, that had only been done indirectly, using theoretical models.”

The work is an important step toward harnessing the unusual features that make TMDs intriguing candidates for future processing technology, because that requires a better understanding of how electrons behave and move around in them.

Monti’s “stopwatch” makes it possible to track moving electrons at a resolution of a mere attosecond — a billionth of a billionth of a second. Tracking electrons inside the crystals, the team made another discovery: The charge flow depends on direction, an observation that seems to fly in the face of physics.

Collaborating with Mahesh Neupane, a computational physicist at Army Research Laboratories, and Dennis Nordlund, an X-ray spectroscopy expert at Stanford University’s SLAC National Accelerator Laboratory, Monti’s team used a tunable, high-intensity X-ray source to excite individual electrons in their test samples and elevate them to very high energy levels.

“When an electron is excited in that way, it’s the equivalent of a car that is being pushed from going 10 miles per hour to thousands of miles per hour,” Monti explains. “It wants to get rid of that enormous energy and fall back down to its original energy level. That process is extremely short, and when that happens, it gives off a specific signature that we can pick up with our instruments.”

The researchers were able to do this in a way that allowed them to distinguish whether the excited electrons stayed within the same layer of the material, or spread into adjacent layers across the crystal.

“We saw that electrons excited in this way scattered within the same layer and did so extremely fast, on the order of a few hundred attoseconds,” Monti says.

In contrast, electrons that did cross into adjacent layers took more than 10 times longer to return to their ground energy state. The difference allowed the researchers to distinguish between the two populations.

“I was very excited to find that directional mechanism of charge distribution occurring within a layer, as opposed to across layers,” says Eads, the paper’s lead author. “That had never been observed before.”

Closer to mass manufacturing

The X-ray “clock” used to track electrons is not part of the envisioned applications but a means to study the behavior of electrons inside them, Monti explains, a necessary first step in getting closer toward technology with the desired properties that could be mass-manufactured.

“One example of the unusual behavior we see in these materials is that an electron going to the right is not the same as an electron going to the left,” he says. “That shouldn’t happen — according to physics of standard materials, going to the left or the right is the exact same thing. However, for these materials that is not true.”

This directionality is an example of what makes TMDs intriguing to scientists, because it could be used to encode information.

“Moving to the right could be encoded as ‘one’ and going to the left as ‘zero,'” Monti says. “So if I can generate electrons that neatly go to the right, I’ve written a bunch of ones, and if I can generate electrons that neatly go to the left, I have generated a bunch of zeroes.”

Instead of applying electrical current, engineers could manipulate electrons in this way using light such as a laser, to optically write, read and process information. And perhaps someday it may even become possible to optically entangle information, clearing the way to quantum computing.

“Every year, more and more discoveries are occurring in these materials,” Eads says. “They are exploding in terms of what kinds of electronic properties you can observe in them. There is a whole spectrum of ways in which they can function, from superconducting, semiconducting to insulating, and possibly more.”

The research described here is just one way of probing the unexpected, exciting properties of layered TMD crystals, according to Monti.

“If you did this experiment in silicon, you wouldn’t see any of this,” he says. “Silicon will always behave like a three-dimensional crystal, no matter what you do. It’s all about the layering.”

Engineers at the University of California, Riverside, have reported advances in so-called “spintronic” devices that will help lead to a new technology for computing and data storage. They have developed methods to detect signals from spintronic components made of low-cost metals and silicon, which overcomes a major barrier to wide application of spintronics. Previously such devices depended on complex structures that used rare and expensive metals such as platinum. The researchers were led by Sandeep Kumar, an assistant professor of mechanical engineering.

UCR researchers have developed methods to detect signals from spintronic components made of low-cost metals and silicon. Credit: UC Riverside

UCR researchers have developed methods to detect signals from spintronic components made of low-cost metals and silicon. Credit: UC Riverside

Spintronic devices promise to solve major problems in today’s electronic computers, in that the computers use massive amounts of electricity and generate heat that requires expending even more energy for cooling. By contrast, spintronic devices generate little heat and use relatively minuscule amounts of electricity. Spintronic computers would require no energy to maintain data in memory. They would also start instantly and have the potential to be far more powerful than today’s computers.

While electronics depends on the charge of electrons to generate the binary ones or zeroes of computer data, spintronics depends on the property of electrons called spin. Spintronic materials register binary data via the “up” or “down” spin orientation of electrons–like the north and south of bar magnets–in the materials. A major barrier to development of spintronics devices is generating and detecting the infinitesimal electric spin signals in spintronic materials.

In one paper published in the January issue of the scientific journal Applied Physics Letters, Kumar and colleagues reported an efficient technique of detecting the spin currents in a simple two-layer sandwich of silicon and a nickel-iron alloy called Permalloy. All three of the components are both inexpensive and abundant and could provide the basis for commercial spintronic devices. They also operate at room temperature. The layers were created with the widely used electronics manufacturing processes called sputtering. Co-authors of the paper were graduate students Ravindra Bhardwaj and Paul Lou.

In their experiments, the researchers heated one side of the Permalloy-silicon bi-layer sandwich to create a temperature gradient, which generated an electrical voltage in the bi-layer. The voltage was due to phenomenon known as the spin-Seebeck effect. The engineers found that they could detect the resulting “spin current” in the bi-layer due to another phenomenon known as the “inverse spin-Hall effect.”

The researchers said their findings will have application to efficient magnetic switching in computer memories, and “these scientific breakthroughs may give impetus” to development of such devices. More broadly, they concluded, “These results bring the ubiquitous Si (silicon) to forefront of spintronics research and will lay the foundation of energy efficient Si spintronics and Si spin caloritronics devices.”

In two other scientific papers, the researchers demonstrated that they could generate a key property for spintronics materials, called antiferromagnetism, in silicon. The achievement opens an important pathway to commercial spintronics, said the researchers, given that silicon is inexpensive and can be manufactured using a mature technology with a long history of application in electronics.

Ferromagnetism is the property of magnetic materials in which the magnetic poles of the atoms are aligned in the same direction. In contrast, antiferromagnetism is a property in which the neighboring atoms are magnetically oriented in opposite directions. These “magnetic moments” are due to the spin of electrons in the atoms, and is central to the application of the materials in spintronics.

In the two papers, Kumar and Lou reported detecting antiferromagnetism in the two types of silicon–called n-type and p-type–used in transistors and other electronic components. N-type semiconductor silicon is “doped” with substances that cause it to have an abundance of negatively-charged electrons; and p-type silicon is doped to have a large concentration of positively charged “holes.” Combining the two types enables switching of current in such devices as transistors used in computer memories and other electronics.

In the paper in the Journal of Magnetism and Magnetic Materials, Lou and Kumar reported detecting the spin-Hall effect and antiferromagnetism in n-silicon. Their experiments used a multilayer thin film comprising palladium, nickel-iron Permalloy, manganese oxide and n-silicon.

And in the second paper, in the scientific journal physica status solidi, they reported detecting in p-silicon spin-driven antiferromagnetism and a transition of silicon between metal and insulator properties. Those experiments used a thin film similar to those with the n-silicon.

The researchers wrote in the latter paper that “The observed emergent antiferromagnetic behavior may lay the foundation of Si (silicon) spintronics and may change every field involving Si thin films. These experiments also present potential electric control of magnetic behavior using simple semiconductor electronics physics. The observed large change in resistance and doping dependence of phase transformation encourages the development of antiferromagnetic and phase change spintronics devices.”

In further studies, Kumar and his colleagues are developing technology to switch spin currents on and off in the materials, with the ultimate goal of creating a spin transistor. They are also working to generate larger, higher-voltage spintronic chips. The result of their work could be extremely low-power, compact transmitters and sensors, as well as energy-efficient data storage and computer memories, said Kumar.

By Emmy Yi, SEMI Taiwan 

Driven by emerging technologies like Artificial Intelligence (AI), Internet of Things (IoT), machine learning and big data, the digital transformation has become an irreversible trend for the electronics manufacturing industry. The global market for smart manufacturing and smart factory technologies is expected to reach US$250 billion in 2018.

“The semiconductor manufacturing process has reached its downscaling limit, making outstanding manufacturing capabilities indispensable for corporations to stay competitive,” said Ana Li, Director of Outreach and Member Service at SEMI. “Advances in cloud computing, data processing, and system integration technologies will be key to driving the broad adoption of smart manufacturing.”

ompany representatives shared insights and successes in manufacturing digitalization.

ompany representatives shared insights and successes in manufacturing digitalization.

To help semiconductor manufacturing companies navigate the digital transformation, SEMI recently held the AI and Smart Manufacturing Forum, a gathering of industry professionals from Microsoft, Stark Technology, Advantech, ISCOM, and Tectura to examine technology trends and smart manufacturing opportunities and challenges. The nearly 100 guests at the forum also included industry veterans from TSMC, ASE, Siliconware, Micron, and AUO. Following are key takeaways from the forum:

1)    Smart manufacturing is the key for digital transformation
Industry 4.0 is all about using automation to better understand customer needs and help drive efficiency improvements that enable better strategic manufacturing decisions. For electronics manufacturers, thriving in the digital transformation should begin with research and development focused on optimizing processes, developing innovative business models, and analyzing data in ways that support their customers’ business values and objectives. Digitization is also crucial for manufacturers to target the right client base, increase productivity, optimize operations and create new revenue opportunities.

2)    Powerful data analysis capabilities will enable manufacturing digitalization

As product development focuses more on smaller production volumes, companies need a powerful data analysis software to accelerate decision-making and problem-solving processes, enhance integration across different types of equipment, and improve management efficiency across enterprise resources including business operations, marketing, and customer service.

3)    The digital transformation will fuel revenue growth
Connectivity and data analysis, the two essential concepts of smart manufacturing, are not only essential for companies to improve facility management efficiency and production line planning but also key for maintaining healthy revenue growth.

“With our more than 130 semiconductor manufacturers and long fab history, Taiwan is in a strong position to help the industry evolve manufacturing to support the explosion of new data-intensive technologies,” said Chen-Wei Chiang, the Senior Specialist at the Taichung City Government’s Economic Development Bureau. “We look forward to working with SEMI to help manufacturers realize the full potential of smart manufacturing.”

With the advent of new data-intensive technologies including AI and IoT, advanced manufacturing processes that improve product yield rates and reduce production costs will become even more important for manufacturers to remain competitive. SEMI Taiwan will continue to assemble representatives from the industry, government, academia and research to examine critical topics in smart manufacturing. To learn more, please contact Emmy Yi, SEMI Taiwan, at
[email protected] or +886.3.560.1777 #205.

 

Boston Semi Equipment (BSE), a global semiconductor test handler manufacturer and provider of test automation technical services, today announced that it has started shipping units of its new strip load/unload module to a top 10 semiconductor manufacturer. The automation modules handle magazines containing strips holding semiconductor devices. The freestanding modules dock to strip-processing equipment via a SMEMA-compliant interface. Operators set up and control the modules using a color touch-screen monitor.

“BSE’s custom engineering group works with semiconductor companies to provide them the exact automation solutions they require,” said Kevin Brennan, vice president of marketing for BSE. “Our multidisciplined team started with our customer’s specification for the strip automation module, and handled the project from concept through to manufacturing of final units. With our global service organization, we can support these modules anywhere in the world.”

BSE’s custom engineering group helps companies accelerate their internal product development activities. Working with BSE, companies can implement cost savings and productivity improvement solutions sooner, helping to grow their market share and improve profits.