Category Archives: Semiconductors

JEDEC Solid State Technology Association, a leader in standards development for the microelectronics industry, announces the successful launch of its newest committee: JC-70 Wide Bandgap Power Electronic Conversion Semiconductors. JC-70 held its first meeting in late October with twenty-three member companies, led by committee and subcommittee chairs from Infineon Technologies, Texas Instruments, Transphorm, and Wolfspeed, a Cree Company. Committee members include industry leaders in power GaN and SiC semiconductors as well as prospective users of WBG power semiconductors and T&M equipment manufacturers. Global multinational corporations and technology startups from the US, Europe, and Asia are working together to bring to the industry a set of standards for reliability, testing, and parametrics of WBG power semiconductors.

JC-70 has two subcommittees, which are focusing on Silicon Carbide (SiC) and Gallium Nitride (GaN) as the most mature wide bandgap (WBG) power semiconductor materials. Both SiC and GaN offer immense potential for enabling higher performance, more compact, and energy efficient power systems. Industry interest in JC-70 has been high with several new members joining the committee after the first meeting, underscoring the importance of creating universal standards to help advance the adoption of WBG power technologies.

“I am delighted by the initial response to the JC-70 committee, and look forward to welcoming additional companies to participate in developing standards for wide bandgap power technology,” said John Kelly, JEDEC President. “Broad industry participation will help ensure the resulting documents meet the needs of product designers as they create systems to enable a more energy efficient future.”

Four committee meetings are planned for 2018, including a webconference on January 25 and a meeting co-located with the APEC Conference on March 5. Interested companies worldwide are welcome to join JEDEC to participate in this important standardization effort.Contact Emily Desjardins ([email protected]) for more information or visit www.jedec.org.

Samsung Electronics Co., Ltd. announced today that it has begun mass producing the industry’s first 2nd-generation of 10-nanometer class (1y-nm), 8-gigabit (Gb) DDR4. For use in a wide range of next-generation computing systems, the new 8Gb DDR4 features the highest performance and energy efficiency for an 8Gb DRAM chip, as well as the smallest dimensions.

Samsung_1y-nm_8Gb_DDR4_Chp+Mod

“By developing innovative technologies in DRAM circuit design and process, we have broken through what has been a major barrier for DRAM scalability,” said Gyoyoung Jin, president of Memory Business at Samsung Electronics. “Through a rapid ramp-up of the 2nd-generation 10nm-class DRAM, we will expand our overall 10nm-class DRAM production more aggressively, in order to accommodate strong market demand and continue to strengthen our business competitiveness.”

Samsung’s 2nd-generation 10nm-class 8Gb DDR4 features an approximate 30 percent productivity gain over the company’s 1st-generation 10nm-class 8Gb DDR4. In addition, the new 8Gb DDR4’s performance levels and energy efficiency have been improved about 10 and 15 percent respectively, thanks to the use of an advanced, proprietary circuit design technology. The new 8Gb DDR4 can operate at 3,600 megabits per second (Mbps) per pin, compared to 3,200 Mbps of the company’s 1x-nm 8Gb DDR4.

To enable these achievements, Samsung has applied new technologies, without the use of an EUV process. The innovation here includes use of a high-sensitivity cell data sensing system and a progressive “air spacer” scheme.

In the cells of Samsung’s 2nd-generation 10nm-class DRAM, a newly devised data sensing system enables a more accurate determination of the data stored in each cell, which leads to a significant increase in the level of circuit integration and manufacturing productivity.

The new 10nm-class DRAM also makes use of a unique air spacer that has been placed around its bit lines to dramatically decrease parasitic capacitance**. Use of the air spacer enables not only a higher level of scaling, but also rapid cell operation.

With these advancements, Samsung is now accelerating its plans for much faster introductions of next-generation DRAM chips and systems, including DDR5, HBM3, LPDDR5 and GDDR6, for use in enterprise servers, mobile devices, supercomputers, HPC systems and high-speed graphics cards.

Samsung has finished validating its 2nd-generation 10nm-class DDR4 modules with CPU manufacturers, and next plans to work closely with its global IT customers in the development of more efficient next-generation computing systems.

In addition, the world’s leading DRAM producer expects to not only rapidly increase the production volume of the 2nd-generation 10nm-class DRAM lineups, but also to manufacture more of its mainstream 1st-generation 10nm-class DRAM, which together will meet the growing demands for DRAM in premium electronic systems worldwide.

Electronics manufacturing executives will sharpen their competitive edge in Dublin, Ireland, on 4-6 March at Europe’s SEMI Industry Strategy Symposium (ISS Europe). The three-day flagship business event brings together analysts, researchers, economists, technologists and industry leaders for critical insights into the forces shaping the electronics manufacturing supply chain. With Europe a key engine of global innovation and the supply chain, ISS Europe 2018 takes aim at helping European organisations find new ways to maximise competitive advantage.

“Organisations operating in Europe need to find the most effective way to innovate, manufacture and profit by leveraging their strengths in the global supply chain,” said Laith Altimime, president, SEMI Europe. “During ISS Europe 2018, hosted by SEMI Europe, top European companies, research institutes and public institutions will convene to discuss how to compete and win globally in the context of Europe’s strategic, economic and social needs.”

ISS Europe 2018 discussions will focus on successful manufacturing in Europe and mechanisms to support innovation. The speaker lineup includes:

  • David Bloss, VP, Technology Manufacturing Group, Intel
  • Holger Blume, professor, University of Hanover
  • Jean-Frederic Clerc, deputy CEO and CTO, CEA Tech
  • Kevin Cooney, senior VP and managing director, Global CIO, Xilinx EMEA
  • Jean-Christophe Eloy, CEO, Yole Développement
  • Ann-Charlotte Johannesson, CEO, CEI-Europe AB
  • Cheryl Miller, founder/executive director, Digital Leadership Institute
  • Michael Morris, director AMBER Research Centre, professor, Trinity College Dublin
  • Alain Mutricy, senior VP product management, GLOBALFOUNDRIES
  • James O’Riordan, CTO, S3 Group
  • David Sneddon, director of large customer sales for Central Europe, Google
  • Florien van der Windt, Cluster Manager Smart Mobility, Dutch Ministry of Infrastructure & Environment
  • Hanns Windele, vice president, Europe and India, Mentor Graphics, a Siemens Business

The Panel Discussion “Critical Strategies to Grow Europe in the Global Supply Chain” will highlight ISS Europe 2018 as participants take advantage of great networking opportunities such as an opening reception and a gala dinner announcing the 2017 European Award winner.

Join Europe’s strategic thinkers and business drivers at ISS Europe 2018 in Dublin, Ireland from March 4-6, 2018.

In today’s “internet of things,” devices connect primarily over short ranges at high speeds, an environment in which surface acoustic wave (SAW) devices have shown promise for years, resulting in the shrinking size of your smartphone. To obtain ever faster speeds, however, SAW devices need to operate at higher frequencies, which limits output power and can deteriorate overall performance. A new SAW device looks to provide a path forward for these devices to reach even higher frequencies.

A team of researchers in China has demonstrated a SAW device that can achieve frequencies six times higher than most current devices. With embedded interdigital transducers (IDTs) on a layer of combined aluminum nitride and diamond, the team’s device was also able to boost output significantly. Their results are published this week in Applied Physics Letters, from AIP Publishing.

“We have found the acoustic field distribution is quite different for the embedded and conventional electrode structures,” said Jinying Zhang, one of the paper’s authors. “Based on the numerical simulation analysis and experimental testing results, we found that the embedded structures bring two benefits: higher frequency and higher output power.”

Surface acoustic wave devices transmit a high-frequency signal by converting electric energy to acoustic energy. This is often done with piezoelectric materials, which are able to change shape in the presence of an electric voltage. IDT electrodes are typically placed on top of piezoelectric materials to perform this conversion.

Ramping up the operational frequency of IDTs — and the overall signal speed — has proven difficult. Most current SAW devices top out at a frequency of about 3 gigahertz, Zhang said, but in principle it is possible to make devices that are 10 times faster. Higher frequencies, however, demand more power to overcome the signal loss, and in turn, some features of the IDTs need to be increasingly small. While a 30 GHz device could transmit a signal more quickly, its operational range becomes limited.

“The major challenge is still the fabrication of the IDTs with such small feature sizes,” Zhang said. “Although we made a lot of efforts, there are still small gaps between the side walls of the electrodes and the piezoelectric materials.”

To ensure that the transducers had the proper feature size, Zhang’s team needed a material with a high acoustic velocity, such as diamond. They then coupled diamond, a material that changes its shape very little with electric voltage, with aluminum nitride, a piezoelectric material, and embedded the IDT inside their new SAW device.

The resulting device operated at a frequency of 17.7 GHz and improved power output by 10 percent compared to conventional devices using SAWs.

“The part which surprised us most is that the acoustic field distribution is quite different for the embedded and conventional electrode structures,” Zhang said. “We had no idea at all about it before.”

Zhang said she hopes this research will lead to SAW devices used in monolithic microwave integrated circuits (MMICs), low-cost, high-bandwidth integrated circuits that are seeing use in a variety of forms of high speed communications, such as cell phones.

EPC announces the EPC2049 power transistor for use in applications including point of load converters, LiDAR, envelope tracking power supplies, class-D audio, and low inductance motor drives. The EPC2049 has a voltage rating of 40 V and maximum RDS(on) of 5 mΩ with a 175 A pulsed output current.

The chip-scale packaging of The EPC2049 handles thermal conditions far better than the plastic packaged MOSFETs since the heat is dissipated directly to the environment with chip-scale devices, whereas the heat from the MOSFET die is held within a plastic package. It measures a mere 2.5 mm x 1.5 mm (3.75 mm2). Designers no longer have to choose between size and performance – they can have both!

“The EPC2049 demonstrates how EPC and gallium nitride transistor technology is increasing the performance and reducing the cost of eGaN devices. The EPC2049 is further evidence that the performance and cost gap of eGaN technology with MOSFET technology continues to widen,” said Alex Lidow, EPC’s co-founder and CEO.

Renesas Electronics Corporation (TSE:6723, “Renesas”), a supplier of advanced semiconductor solutions, today announced the integration of Intersil Corporation as a legal entity and a new branding policy following the acquisition of Intersil on February 24, 2017. Effective January 1, 2018, Intersil Corporation is expected to operate in the market under the name of Renesas Electronics America Inc. The completion of Renesas’ U.S. entity integration marks a major milestone in the integration process, which remains well on track. As well, the integration process in Japan and Korea is expected to be completed on or about January 1, 2018. The remaining Intersil entities are expected to be integrated in the near future.

“With the integration of the Intersil business, we have taken another significant step towards maximizing the full potential of the combined business, providing scale, stability and a comprehensive product mix,” said Bunsei Kure, Representative Director, President and CEO of Renesas Electronics Corporation. “With the enhanced global strength, Renesas is in the best position to further strengthen its leadership in the global semiconductor market.”

“The promise of the Renesas and Intersil integration has already begun to materialize as we’ve started operating as one company,” said Necip Sayiner, Executive Vice President of Renesas, President of Renesas Electronics America and President, CEO and Director of Intersil. “We are fully combining our portfolios, technologies and talent to maximize the potential of the acquisition synergies. As a result, we are positioned to expand our business in the broad-based market, providing complete system solutions that enable customers to get to market faster.”

As of January 1, 2018, Intersil Corporation is expected to complete an absorption-type merger with Renesas Electronics America Inc., the U.S. subsidiary of Renesas, leaving Intersil Corporation as the surviving company. Intersil Corporation will then change its name to Renesas Electronics America Inc.

Prior to this entity integration, Renesas implemented a transition to a new organizational structure in July 2017 to accelerate the integration of the Intersil business. The aim of this transition is to move beyond its Japan-centric business management and to achieve a truly global company that acts as “One Global Renesas,” a company that operates as a global entity.

Nova (Nasdaq: NVMI), a provider of metrology solutions for advanced process control used in semiconductor manufacturing, today announced that Ronnie (Miron) Kenneth, former Chief Executive Officer of Voltaire Technologies Ltd. (Nasdaq: VOLT) and former Chief Executive Officer of Pontis Ltd., has been appointed to the company’s Board of Directors.

Mr. Kenneth is a veteran high-tech leader who served for ten years as Chairman and Chief Executive Officer at Voltaire, leading it to an initial public offering on Nasdaq in 2007. Following the company’s merger with Mellanox Technologies Ltd. (Nasdaq: MLNX) in 2011, Mr. Kenneth became the Chief Executive Officer of Pontis Ltd., a privately-held company, until 2013. Mr. Kenneth currently serves as the Chairman of Teridion Technologies Ltd. and Varada Ltd., and he is a director of Allot Communications Ltd. (Nasdaq: ALLT) and Orbotech Ltd. (Nasdaq: ORBK).

“Ronnie brings a broad experience in leading technology companies. I am looking forward to adding his extensive experience in the high-tech industry to our board as Nova continues to expand. I have no doubt that Ronnie will be an important addition to our Board of Directors and will contribute to Nova’s success,” commented Dr. Micha Brunstein, Nova’s Chairman of the Board.

“I am excited to join Nova and have the opportunity to contribute to its continued growth,” added Mr. Kenneth. “Nova has already established a strong position in a rapidly expanding market, and I believe that this talented board will continue to chart a course of success for the company.”

EV Group (EVG), a supplier of wafer bonding and lithography equipment for the MEMS, nanotechnology and semiconductor markets, today announced that it has completed construction and opened a new building at its corporate headquarters in Austria to expand capacity for producing its industry-leading process equipment. The building, part of an investment of more than 20 million Euros that was announced earlier this year, allows for a significant expansion of warehouse space and provides more than 50 percent additional test room space for the final assembly of EVG’s high-precision systems, as well as technical source inspection of the systems by its customers.

“EVG operates in highly dynamic markets, where we always strive to provide our customers with the latest technologies to realize their product ideas with the shortest possible time to market–true to EVG’s Triple-i philosophy of invent-innovate-implement,” stated Dr. Werner Thallner, executive operations and financial director at EV Group. “Our headquarters expansion helps ensure that we continue to deliver on this pledge to our customers. I’m pleased to say that we completed this expansion in record time too, and we already have plans for additional capacity expansion in preparation for future growth.”

The completed building at EV Group's headquarters is part of an investment of more than 20 million Euros to expand the company's production capacity.

The completed building at EV Group’s headquarters is part of an investment of more than 20 million Euros to expand the company’s production capacity.

The new test rooms, which are designed to house larger systems including high-volume manufacturing platforms and solutions for panel-sized substrates, are equipped with the latest air conditioning and cleanroom technology. The ambient conditions created through these measures are similar to those found in the semiconductor fabs or bio-medical labs of EVG’s global customers. The sophisticated security concept at EVG’s headquarters, which extends to the new building complex, enables customers to have controlled access to individual test rooms where the technical source inspection of their tools can take place together with EVG specialists.

Several EVG systems have already been moved to the new facility for final assembly, software installation and initial set-up in order to make more room available for fulfilling additional system orders.

More than 70,000 players in the electronics manufacturing industry are expected to descend upon SEMICON China for technology and innovation insights to accelerate already strong industry growth. March 14-16, 2018, at the Shanghai New International Expo Centre (SNIEC), SEMICON China 2018 will bring together top executives and technologists in six exhibition halls, the most ever in the event’s 30-year history, to find opportunities in key focus areas including Smart Automotive and Smart Manufacturing, Green Tech, Advanced Technology, and Power and Compound Semiconductors.

Concurrent with FPD China, SEMICON China 2018, the largest and most influential gathering of the semiconductor supply chain in China, is now open for visitor registration.

SEMICON China technical forums will address the most pressing industry topics:

  • CSTIC 2018: Staged in conjunction with SEMICON China, this has ranked among the largest and most comprehensive annual semiconductor technology conferences in China since 2000. March 11-12, 2018, CSTIC 2018 will feature nine symposiums covering all aspects of semiconductor technology, with a focus on manufacturing and advanced technology.
  • SIIP: Tech Innovation and Investment Forum: SIIP is a key international platform for semiconductor industry investment in China. Informed by China’s IC policy to fund key semiconductor sectors, leaders of China’s National IC Fund and municipal IC funds will join leaders from global investment institutions to discuss hot opportunities in China semiconductor investment – and applications such as Artificial Intelligence (AI).
  • Win-Win: Build China’s IC Ecosystem: Spurred by a strong market outlook, policy and the national fund, fab construction in China will surge over the next five years, with OSAT (Outsourced Semiconductor Assembly and Test) making strategic investments. Industry leaders will explore how China’s semiconductor manufacturing industry will strengthen its core competency, prioritize resources, revisit its business model, and thrive in the electronics ecosystem.
  • Power and Compound Semiconductor International Forum: Among the largest power and compound semiconductor industry forums in Asia, this two-day event features four sessions: Wide Band Gap Power Electronics, Optoelectronics, Compound Semiconductor in Communications, and Emerging Power Device Technology
  • Smart Automotive Forum – AI Inside: Top automotive, electronic, AI and technology executives will gather to discuss the future of the rapidly disrupting automotive industry.
  • China Memory Strategic Forum: Driven by market needs and policy support, three new Chinese Memory foundries are accelerating memory development. Industry leaders will explore ways multinationals can benefit more from China’s memory market, China can better leverage its technical strength, and Chinese companies can enhance research and development collaboration with global partners.
  • Green High-Tech Facility Forum: With more than 10 fabs now under construction in China,China’s semiconductor industry is entering a stage of rapid growth. Green Tech leaders will discuss how China can improve factory design and construction; optimize energy efficiency of semiconductor manufacturing equipment; enhance machine platform stability, chemicals and gas management, and wastewater treatment; and improve risk management.
  • Smart Manufacturing Forum: The semiconductor industry must be proactive in all aspects of smart manufacturing. This session will address automation, product tractability, cost and cycle time reduction, enhancements in productivity and yield, and efficiency improvements in front- and back-end factories.
  • Semiconductor New Technology Conference: The best way to promote new technology is through direct customer interaction and collaboration. Join this conference to discuss your new IC, new IOT solution, new machine or new material with more 200 customers from around the world.
  • 2018 China Display Conference-Emerging Display Forum: Join this forum, concurrent with FPD China 2018, to exchange ideas on emerging display technologies and future development.
  • MSIG International IOT Conference 2018: MEMS, sensors, IC, NB-IoT, 5G and smart application experts will share their insights on the IoT market and how to maximize the value of IoT applications.

SEMICON China also features three theme pavilions:

  • IC Manufacturing: See products, technologies, and manufacturing solutions focused on serving China’s fabless IC community, from design to final manufacturing.
  • LED and Sapphire: Learn how China has become the world’s largest sapphire manufacturing center.
  • ICMTIA: See the local IC material industry demonstrate its capabilities to support semiconductor industry growth.

Cypress Semiconductor Corp. (Nasdaq: CY) today announced the appointment of Jeannine Sargent to its board of directors. Sargent brings 30 years of experience encompassing leadership, operations, marketing and engineering roles within a diverse mix of high tech component and systems companies across multiple industries. As part of her responsibilities on Cypress’ board, she will serve on the company’s Compensation Committee.

In her most recent role as President of Innovation and New Ventures at Flex, a leading contract design, engineering and manufacturing company, Sargent led the fastest growing and highest margin design-enabled business, which was at the core of Flex’s long-term strategic growth plan. Prior to this, she served as president of Flex’s Energy business, which she helped build into a global multi-billion-dollar industry leader focusing on renewable energy, smart grid and solid-state lighting technologies, products and services. In her career, Sargent has served as CEO at both Oerlikon Solar, a thin-film silicon solar photovoltaic (PV) module manufacturer, and Voyan Technology, an embedded systems software provider to the communications and semiconductor industries. She currently serves on several investment and advisory boards and is on the board of trustees at Northeastern University.

“Jeannine Sargent is another excellent addition to Cypress’ board,” said Steve Albrecht, Cypress’ chairman. “She strengthens our team with the depth of her experience in growing innovative and profitable systems businesses at the forefront of emerging, high tech industries. I’m excited for her valuable contributions toward supporting the management team as they continue executing our strategy to become the leading embedded system solutions supplier in high-growth segments including Automotive, Industrial and applications across the IoT.”

Sargent holds a B.S. in chemical engineering from Northeastern University and certificates from the executive development programs at the MIT Sloan School of Management, Harvard University and Stanford University.