Category Archives: Wafer Processing

Picosun Oy, a supplier of Atomic Layer Deposition (ALD) thin film coating technology for global industries, partners with STMicroelectronics S.r.l. to develop the next generation 300mm production solutions for advanced power electronics.

Power electronic components are right at the heart of many core elements of our society, where energy saving, sparing use of natural resources, and CO2 emission reductions are called for to provide for sustainable future. Energy production with renewables such as wind and solar, clean transportation with electric vehicles and trains, and industrial manufacturing with energy-smart power management and factory automation are key markets where the demand for advanced power components is increasing.

Most power semiconductor industries use 200 mm wafers as substrates. Transfer to 300 mm enables more efficient, ecological, and economical production through larger throughputs with relatively smaller material losses, and adaptation of novel manufacturing processes such as ALD allows smaller chip sizes with increased level of integration.

As a part of the funded project R3-POWERUP (*), Picosun’s PICOPLATFORM™ 300 ALD cluster tool will be optimized and validated for 300 mm production of power electronic components. The SEMI S2 certified PICOPLATFORM™ 300 cluster tool consists of two PICOSUN™ P-300S ALD reactors, one dedicated for high-k dielectric oxides and one for nitrides, connected together and operated under constant vacuum with a central vacuum robot substrate handling unit. The ALD reactors are equipped with Picosun’s proprietary Picoflow™ feature which enables conformal ALD depositions in high aspect ratios up to 1:2500 and even beyond. Substrate loading is realized with an EFEM with FOUP ports. The fully automated cluster tool can be integrated into the production line and connected to factory host via SECS/GEM interface.

“Our PICOPLATFORM™ 300 cluster tools have already proven their strength in conventional IC applications, so expansion to the power semiconductors is only natural. We are very pleased to work with a company such as STMicroelectronics to tailor and validate our 300mm ALD production solutions to this rapidly growing market. This is also a prime opportunity both to contribute to the future of European semiconductor industries, and to utilize ALD to provide technological solutions to the global ecological and societal challenges such as climate change and dwindling natural resources,” summarizes Juhana Kostamo, Managing Director of Picosun.

Sales of analog ICs are expected to show the strongest growth rate among major integrated circuit market categories during the next five years, according to IC Insights’ new 2018 McClean Report, which becomes available this month.  The McClean Report forecasts that revenues for analog products—including both general purpose and application-specific devices—will increase by a compound annual growth rate (CAGR) of 6.6% to $74.8 billion in 2022 from $54.5 billion in 2017.

The 2018 McClean Report separates the total IC market into four major product categories: analog, logic, memory, and microcomponents.  Figure 1 shows the forecasted 2017-2022 CAGRs of these product categories compared to the projected total IC market annual growth rate of 5.1% during the five-year period.

Figure 1

Figure 1

Analog ICs, the fastest growing major product category in the forecast, are a necessity within both very advanced systems and low-budget applications.  Components like power management analog devices help regulate power usage to keep devices running cooler and ultimately to help extend battery life in cellphones and other mobile/battery operated systems. The power management market is forecast to grow 8% in 2018 after increasing 12% in 2017.

In 2018, the automotive—application-specific analog market is forecast to increase 15% to be the fastest growing analog IC category, and the third-fastest growing of 33 IC product categories classified by WSTS. The growth of autonomous and electric vehicles and more electronic systems on board all new cars are expected to keep demand robust for automotive analog devices.

Communications and consumer applications continue to represent the biggest end-use applications for signal conversion analog ICs.  Signal conversion components (data converters, mixed-signal devices, etc.) are forecast to continue on fast-track growth with double-digit sales gains expected in three of the next five years.

After an extraordinary 58% sales spike in 2017, the memory market is forecast to return to more “normal” growth through the forecast.  The memory market is forecast to increase by a CAGR of 5.2% through 2022. New capacity for flash memory and, to a lesser extent for DRAM, should bring some relief from fast-rising ASPs and result in better supply-demand balance for these devices to support newer applications such as enterprise solid-state drives (SSDs), augmented and virtual reality, graphics, artificial intelligence, and other complex, real-time workload functions.

Meanwhile, growth in the microcomponent market (forecast CAGR of 3.9%) has cooled significantly due to weak shipments of standard PCs (desktops and notebooks).  Tablet sales have also slowed and weighed down total microcomponent sales. With the exception of the 32-bit MCU market, annual sales gains in most microcomponent segments are forecast to remain in the low- to mid single digit range through 2022.

IC Insights forecasts the total IC market will increase by a CAGR of 5.1% from 2017-2022.  Following the 22% increase in 2017, the total IC market is forecast to grow 8% in 2018 to $393.9 billion and then continue on an upward trend to reach $466.8 billion in 2022, the final year of the forecast.

Worldwide semiconductor revenue totalled $419.7 billion in 2017, a 22.2 percent increase from 2016, according to preliminary results by Gartner, Inc. Undersupply helped drive 64 percent revenue growth in the memory market, which accounted for 31 percent of total semiconductor revenue in 2017.

“The largest memory supplier, Samsung Electronics, gained the most market share and took the No. 1 position from Intel — the first time Intel has been toppled since 1992,” said Andrew Norwood, research vice president at Gartner. “Memory accounted for more than two-thirds of all semiconductor revenue growth in 2017, and became the largest semiconductor category.”

The key driver behind the booming memory revenue was higher prices due to a supply shortage. NAND flash prices increased year over year for the first time ever, up 17 percent, while DRAM prices rose 44 percent.

Equipment companies could not absorb these price increases so passed them onto consumers, making everything from PCs to smartphones more expensive in 2017.

Other major memory vendors, including SK Hynix and Micron Technology, also performed strongly in 2017 and rose in the rankings (see Table 1).

 

2017 Rank

2016 Rank

Vendor

2017 Revenue

2017 Market Share (%)

2016 Revenue

2016-2017 Growth (%)

1

2

Samsung Electronics

61,215

14.6

40,104

52.6

2

1

Intel

57,712

13.8

54,091

6.7

3

4

SK Hynix

26,309

6.3

14,700

79.0

4

6

Micron Technology

23,062

5.5

12,950

78.1

5

3

Qualcomm

17,063

4.1

15,415

10.7

6

5

Broadcom

15,490

3.7

13,223

17.1

7

7

Texas Instruments

13,806

3.3

11,901

16.0

8

8

Toshiba

12,813

3.1

9,918

29.2

9

17

Western Digital

9,181

2.2

4,170

120.2

10

9

NXP

8,651

2.1

9,306

-7.0

Others

174,418

41.6

157,736

10.6

Total Market

419,720

100.0

343,514

22.2

Source: Gartner (January 2018)

Second-placed Intel grew its revenue 6.7 percent in 2017, driven by 6 percent growth in data center processor revenue due to demand from cloud and communications service providers. Intel’s PC processor revenue grew more slowly at 1.9 percent, but average PC prices are on the rise again after years of decline following the market’s shift from traditional desktops toward two-in-one and ultramobile devices.

The current rankings may not last long, however, “Samsung’s lead is literally built on sand, in the form of memory silicon,” said Mr. Norwood. “Memory pricing will weaken in 2018, initially for NAND flash and then DRAM in 2019 as China increases its memory production capacity. We then expect Samsung to lose a lot of the revenue gains it has made.”

2017 was a relatively quiet year for mergers and acquisitions. Qualcomm’s acquisition of NXP was one big deal that was expected to close in 2017, but did not. Qualcomm still plans to complete the deal in 2018, but this has now been complicated by Broadcom’s attempted takeover of Qualcomm.

“The combined revenues of Broadcom, Qualcomm and NXP were $41.2 billion in 2017 — a total beaten only by Samsung and Intel,” said Mr. Norwood. “If Broadcom can finalize this double acquisition and Samsung’s memory revenue falls as forecast, then Samsung could slip to third place during the next memory downturn in 2019.”

Luc Van den Hove, president and CEO of imec

Luc Van den Hove, president and CEO of imec

SEMI today announced that Luc Van den hove, president and CEO of imec, has been selected as the 2018 recipient of the SEMI Sales and Marketing Excellence Award, inspired by Bob Graham. He will be honored for outstanding achievement in semiconductor equipment and materials marketing during ceremonies at ISS 2018 on January 17 in Half Moon Bay, California.

Van den hove will receive the 21st SEMI Sales and Marketing Excellence Award for his contributions and leadership in consortia that made the imec model of collaborative research using pooled infrastructure self-sustaining. The model enables companies of all sizes and position in the value chain to participate in collaborative research that advances industry technology.

Inspired by the power of technology to improve lives, Van den hove transformed research from its focus on participation cost to an emphasis on collaboration to produce greater value. Under his leadership, imec brings together brilliant minds from established companies, startups and academia worldwide to work in a creative and stimulating environment with imec serving as their trusted partner. imec’s international research and development drives innovations in nanoelectronics and digital technologies by leveraging its world-class infrastructure and local and global ecosystem of diverse partners to accelerate progress towards a connected, sustainable future. Van den hove joined imec in 1984 and has led the technology innovation hub since 2009.

“Luc Van den hove is recognized both for his innovative marketing leadership and his resolve to deepen industry collaboration for the common good. Today, SEMI and its membership honor Van den hove for his contributions to the success of the semiconductor manufacturing industry,” said Ajit Manocha, president and CEO of SEMI.

The SEMI Sales and Marketing Excellence Award was inspired by the late Bob Graham, the distinguished semiconductor industry leader, who was a member of the founding team of Intel. Graham also helped establish industry-leading companies such as Applied Materials and Novellus Systems. The Award was established to honor individuals for the creation and/or implementation of marketing programs that enhance customer satisfaction and further the growth of the semiconductor equipment and materials industry.

Eligible candidates are nominated by their industry peers and selected after due diligence by an award committee. Previous recipients of this SEMI award include: Toshio Maruyama (2017), Jim Bowen (2016), Terry (Tetsuro) Higashi (2015), Winfried Kaiser (2014), Joung Cho (JC) Kim (2013), G. Dan Hutcheson (2012), Franz Janker (2011), Martin van den Brink (2010), Peter Hanley (2009), Richard Hong (2008), Richard E. Dyck (2007), Aubrey (Bill) C. Tobey (2006), Archie Hwang (2005), Edward Braun (2004), Shigeru (Steve) Nakayama (2003), Jerry Hutcheson and Ed Segal (2002), Jim Healy and Barry Rapozo (2001), and Art Zafiropoulo (2000).

By David W. Price, Douglas G. Sutherland and Jay Rathert

Author’s Note: The Process Watch series explores key concepts about process control—defect inspection, metrology and data analysis—for the semiconductor industry. This article is the first in a five-part series on semiconductors in the automotive industry. In this article, we introduce some of the challenges involved in the automotive supply chain. Future articles in the series will address specific process control solutions to those challenges.

In the 1950s less than 1% of the total cost of manufacturing a car was comprised of electronics. Today that cost can be more than 35% of the total and it is expected to increase to 50% by the year 2030.1 The rapid increase in the use of electronics in the automotive industry has been driven by four main areas:

  1. Systems monitoring and control (electronic fuel injection, gas-electric hybrids, etc.)
  2. Safety (anti-lock brakes, air bags, etc.)
  3. Advanced Driver Assistance Systems (lane departure warning, parking assist, blind spot monitoring, adaptive cruise control, etc.)
  4. Convenience (satellite navigation, infotainment, etc.)

Semiconductor components are at the core of the electronics integrated in cars, and depending on the make and model, a modern car may require as many as 8000 chips.2 This number will only increase as autonomous driving gains popularity – additional electronic subsystems with their underlying ICs will power the sensors, radar and AI needed for driverless cars.

With over 88 million cars and light trucks produced every year,3 each with thousands of chips, the influence of the automotive industry on semiconductor manufacturing is starting to take hold. There is one simple fact about these thousands of chips found in a car: they cannot fail. Reliability is absolutely critical for automotive semiconductor components. Any chip that fails in the field can result in costly warranty repairs and recalls, can damage the image of the automaker’s brand – or at the extreme, can result in personal injury or even loss of life.

If the average car contains 5000 chips and the automaker produces 25,000 cars per day, then even a chip failure rate at the parts per million (ppm) level will result in more than 125 cars per day that experience reliability issues as a result of chip quality. With semiconductors as the top issue on automakers’ failure Pareto,4 Tier 1 automotive system suppliers are now demanding parts per billion (ppb) levels of semiconductor quality with an increasing trend toward a maximum number of “total allowable failure events” regardless of volume. Current methods for finding reliability failures are overly dependent on test and burn-in, and as a result, the quality targets are missed by orders of magnitude. Increasingly, challenging audit standards are pushing for reliability failures to be found at their source in the fab, where costs of discovery and corrective action are the lowest. To enter this growing market segment – or simply maintain share – IC manufacturers must aggressively address this inflection in chip reliability requirements.

Fortunately for semiconductor manufacturers, chip reliability is highly correlated to something they know very well: random defectivity.5 In fact, for a well-designed process and product, early-life chip reliability issues (extrinsic reliability) are dominated by random defectivity.6-12 A killer defect (one that impacts yield) is a defect that causes the device to fail at time t = 0 (final test). A latent defect (one that impacts chip reliability) is a defect that causes the device to fail at t > 0 (after burn-in). The relationship between killer defects (yield) and latent defects (reliability) stems from the observation that the same defect types that impact yield also impact reliability. The two are distinguished primarily by their size and where they occur on the device structure. Figure 1 shows examples of killer and latent defects that result in open and short circuits.

Figure 1

Figure 1. The same defect types that impact yield also affect reliability. They are distinguished primarily by their size and where they occur on the device’s pattern structure.

The relationship between yield and reliability defects is not limited to a few specific defect types; any defect type that can cause yield loss is also a reliability concern. Failure analysis indicates that the majority of reliability defects are, in fact, process-related defects that originate in the fab. Because yield and reliability defects share the same root cause, increasing yield (by reducing yield-related defects) will have the additional benefit of improving reliability.

The yellow line in figure 2 shows a typical yield curve. If we only consider chip yield, then at some point, further investment in this process may not be cost-effective and thus the yield tends to level off as time progresses. The blue dashed line in figure 2 shows the curve for the same fab making the same product. However, if they want to supply the automotive industry then they must also account for the costs of poor reliability. In this case further investment is warranted to drive down defect density even further, which will both increase yield and deliver the improved reliability required for automotive suppliers.

Figure 2. Yield curves (Yield versus Time) for different fab types. The yellow line is for non-automotive fabs where the major consideration is fab profitability. At some point the yield is high enough that it is no longer practical to continue trying to drive down defectivity. The blue dashed line is the yield curve that also factors in reliability. For IC products used in the automotive supply chain additional investment must be made to ensure high reliability, which is strongly correlated to yield.

Figure 2. Yield curves (Yield versus Time) for different fab types. The yellow line is for non-automotive fabs where the major consideration is fab profitability. At some point the yield is high enough that it is no longer practical to continue trying to drive down defectivity. The blue dashed line is the yield curve that also factors in reliability. For IC products used in the automotive supply chain additional investment must be made to ensure high reliability, which is strongly correlated to yield.

The change from being a consumer-grade chip supplier to an automotive supplier requires a paradigm shift at the fab management level. Successful semiconductor manufacturers who supply the automotive industry have long adopted the following strategy: The best way to reduce the possibility of latent (reliability) defects is to reduce the fab’s overall random defectivity levels. This means having a world class defect reduction strategy:

  1. Higher baseline yields
  2. Lower incidence of excursions
  3. When excursions do occur, quickly find and fix them inline
  4. Ink out suspicious die using die-level screening

 

These and other strategies will be addressed in forthcoming articles in this Process Watch automotive series.

 

About the Authors:

 

Dr. David W. Price and Jay Rathert are Senior Directors at KLA-Tencor Corp. Dr. Douglas Sutherland is a Principal Scientist at KLA-Tencor Corp. Over the last 15 years, they have worked directly with over 50 semiconductor IC manufacturers to help them optimize their overall process control strategy for a variety of specific markets, including automotive reliability, legacy fab cost and risk optimization, and advanced design rule time-to-market BKMs. The Process Watch series of articles attempts to summarize some of the universal lessons they have observed through these engagements.

 

References:

 

  1. https://www.statista.com/statistics/277931/automotive-electronics-cost-as-a-share-of-total-car-cost-worldwide/
  2. Senftleben and Froehlich, Aspects of Semiconductor Quality from an OEM Perspective, April 2017.
  3. http://www.businessinsider.com/2016-was-a-record-breaking-year-for-global-car-sales-and-it-was-almost-entirely-driven-by-china-2017-1
  4. https://www.consumerreports.org/car-reliability-owner-satisfaction/consumer-reports-car-reliability-survey-2017/
  5. Price and Sutherland, “Process Watch: The Most Expensive Defect, Part 2,” Solid State Technology, July 2015.
  6. Riordan et al., “Microprocessor Reliability Performance as a Function of Die Location for a .25um, Five Layer Metal CMOS Logic Process,” 37th Annual International Reliability Physics Symposium Proceedings (1999): 1-11. http://dx.doi.org/10.1109/RELPHY.1999.761584
  7. Barnett et al., “Extending Integrated-Circuit Yield Models to Estimate Early-Life Reliability,” IEEE Transactions on Reliability, Vol. 52, No. 3., 2003.
  8. Shirley, “A Defect Model of Reliability,” 33rd Annual International Reliability Symposium, Las Vegas, NV, 1995.
  9. Kim et al., “On the Relationship of Semiconductor Yield and Reliability,” IEEE Transactions on Semiconductor Manufacturing, Vol. 18, No. 3, 2005.
  10. Roesch, “Reliability Experience,” Published lecture #12 for Quality and Reliability Engineering ECE 510 at Portland State University, 2013. http://web.cecs.pdx.edu/~cgshirl/Quality%20and%20Reliability%20Engineering.htm
  11. Shirley and Johnson, “Defect Models of Yield and Reliability,” Published lecture #13 for Quality and Reliability Engineering ECE 510 course at Portland State University, 2013. http://web.cecs.pdx.edu/~cgshirl/Quality%20and%20Reliability%20Engineering.htm
  12. Kuper et al., “Relation between Yield and Reliability of Integrated Circuits: Experimental results and Application to Continuous Early Failure Rate Reduction Programs,” Proceedings of the International Reliability Physics Symposium (1996): 17-21.

By Emir Demircan, Senior Manager Advocacy and Public Policy, SEMI Europe

Electronic manufacturing is becoming cool to today’s youth. STEM skills are hot in the global job market – though the number of females pursuing a STEM education continues to lag. Work-based learning is key to mastering new technologies. And the electronics industry needs a global talent pipeline more than ever.

These were key highlights from a SEMI Member Forum in December that brought together industry representatives and students in Dresden to weigh in on job-skills challenges facing the electronics manufacturers and solutions for the industry to consider. Here are the takeaways:

1) Electronics is much more than manufacturing

For many years, working in the manufacturing industry was not an appealing prospect for millennials. This picture is certainly changing. The pivotal role of electronics manufacturing in helping solve grand societal challenges in areas such as the environment, healthcare and urban mobility is reaffirmed by countries around the world. Electronics is the lifeblood of game-changing technologies such as autonomous driving, AI, IoT, and VR/AR, enticing more young employees into careers in research, design, technology development, production, cyber security and international business, and in disciplines ranging from engineering and data analytics to software development and cyber security.

What’s more, the drudgery of many factory jobs is disappearing thanks to automation, digitization and robotization. According to CEDEFOP, the European Centre for the Development of Vocational Training, low-skilled jobs in electro-engineering and machine operations/assembly in the European Union (EU) is projected to decrease 6.98 percent and 2.03 percent, respectively, between 2015 and 2025.

In parallel, the industry will need more high-skilled workers. For instance, within the same period, CEDEFOP forecasts a 12.51 percent increase in jobs for EU researchers and engineers. Soft skills will see high demand too. As the electronics industry continues to globalize and drive the integration of vertical technologies, workers proficient in communicating in an international environment, leading multicultural teams, developing tailor-made solutions and making data-driven decisions will see higher demand.

2) STEM skills will remain under the spotlight

Continuous innovation is the oxygen of the electronics manufacturing industry, powering the development of highly customized solutions by workers with technical expertise in chemistry, materials, design, mechanics, production and many other fields. In addition, capabilities such as smart manufacturing require workers with growing technical sophistication in areas such as software, information and communications technology (ICT) and data analytics, stiffening the challenge the electronics industry faces in finding skilled workers. Little wonder that employers in Europe struggle to build a workforce with the right technical expertise. The findings of the study “Encouraging STEM Studies for the Labour Market” conducted by the European Parliament underscores the difficulty of hiring enough workers with adequate STEM skills:

  • The proportion of STEM students is not rising at the European level and the underrepresentation of women persists.
  • Businesses are expected to produce about 7 million new STEM jobs, an uptick of 8 percent, between 2013 and 2025 in Europe.

3) The women-in-tech gap is becoming more persistent 

The global manufacturing industry suffers from strikingly low female participation in STEM education and careers. According to UNSECO, in Europe and North America, the number of female graduates in STEM is generally low. For instance, women make up just 19 percent of engineers in Germany and the U.S. The European Parliament study confirms that STEM employment remains stubbornly male-dominated, with women filling just 24 percent of science and engineering jobs and 15 percent of science and engineering associate positions in Europe. According to an article by Guardian, a mere 16 percent of computer science undergraduates in the United Kingdom and the U.S. are female. This yawning gender gap is a deep concern for electronics manufacturing companies in Europe, hampering innovation in a sector that relies heavily on diversity and inclusion and shrinks the talent pipeline critical to remaining competitive.

4) Coping with new technologies: work-based learning is the key

The evolution of the electronics industry since the 1980s has been swift. PCs emerged largely as islands of communication, then became networked. Networking bred the proliferation of social platforms and mobile devices and, today, is giving rise to IoT. Education curricula in Europe, however, have not matured at the same pace, opening a gap between the worlds of industry and education and imposing a formidable school-to-work transition for many young graduates. Work-based learning, which helps students develop the knowledge and practical job skills needed by business, is one solution. The industry reports that work-based learning is vital to remaining competitive in the long run. Innovative dual-learning programmes, apprenticeships and industrial master’s and doctorates are shining examples that are already paying off in some parts of Europe. Such work-based learning models can be extended as a common pillar of education in Europe.

5) A global industry needs a global talent pipeline

The electronics value chain workforce needs an international and multicultural talent pipeline, chiefly spanning the U.S., Europe and Asia. However, many European manufacturers, in particular small and medium enterprises (SMEs), report that building an international workforce remains a challenge due to employment and immigration law barriers as well as cultural and linguistic differences. The EU’s Blue Card initiative, designed to facilitate hiring beyond Europe, is a step in the right direction. Nevertheless, with the exception of Germany, EU member states have made little or no use of the EU Blue Card scheme.

SEMI drives sector-wide initiatives on workforce development

Understanding the urgency, SEMI is accelerating its workforce development activities at global level. Contributing to this initiative, the SEMI talent pipeline Forum in Dresden served as an effective platform for the industry to share its challenges and opportunities with students at various education levels. Led by industry representatives, the sessions enabled the exchange of workforce-development best practices and paved the way for further collaboration among industry, academia and government in Europe. For example, in the Career Café session, students networked with hiring managers. Other workforce development initiatives include:

To help position the skills challenges faced by SEMI members high on the public policy agenda, SEMI in 2017 joined several policy groups including Digital Skills and Jobs Coalition and Expert Group on High-Tech Skills. Last year SEMI also launched Women in Tech, an initiative that convenes industry leaders to help increase female representation in the sector. SEMI also educates its members about key EU resources such as the Blue Card and Digital Opportunity Internship programmes aimed at hiring international talent. In 2018, SEMI will reach out to even more young people through its High Tech U programme to raise awareness of careers in electronics. SEMICON Europa 2018 will host dedicated talent pipeline sessions to help the industry tackle its skills challenges. ISS Europe 2018 sessions on Gaining, Training and Retaining World Class Talent will disseminate best practices to the wider industry. Also this year, SEMI Europe plans to start a new advisory group, “Workforce 4.0,” dedicated to bringing together human resources leaders in the sector to give the electronics manufacturing industry a stronger voice on workforce development.

 

Insulating oxides are oxygen containing compounds that do not conduct electricity, but can sometimes form conductive interfaces when they’re layered together precisely. The conducting electrons at the interface form a two-dimensional electron gas (2DEG) which boasts exotic quantum properties that make the system potentially useful in electronics and photonics applications.

Researchers at Yale University have now grown a 2DEG system on gallium arsenide, a semiconductor that’s efficient in absorbing and emitting light. This development is promising for new electronic devices that interact with light, such as new kinds of transistors, superconducting switches and gas sensors.

“I see this as a building block for oxide electronics,” said Lior Kornblum, now of the Technion – Israel Institute of Technology, who describes the new research appearing this week in the Journal of Applied Physics, from AIP publishing.

Oxide 2DEGs were discovered in 2004. Researchers were surprised to find that sandwiching together two layers of some insulating oxides can generate conducting electrons that behave like a gas or liquid near the interface between the oxides and can transport information.

Researchers have previously observed 2DEGs with semiconductors, but oxide 2DEGs have much higher electron densities, making them promising candidates for some electronic applications. Oxide 2DEGs have interesting quantum properties, drawing interest in their fundamental properties as well. For example, the systems seem to exhibit a combination of magnetic behaviors and superconductivity.

Generally, it’s difficult to mass-produce oxide 2DEGs because only small pieces of the necessary oxide crystals are obtainable, Kornblum said. If, however, researchers can grow the oxides on large, commercially available semiconductor wafers, they can then scale up oxide 2DEGs for real-world applications. Growing oxide 2DEGs on semiconductors also allows researchers to better integrate the structures with conventional electronics. According to Kornblum, enabling the oxide electrons to interact with the electrons in the semiconductor could lead to new functionality and more types of devices.

The Yale team previously grew oxide 2DEGs on silicon wafers. In the new work, they successfully grew oxide 2DEGs on another important semiconductor, gallium arsenide, which proved to be more challenging.

Most semiconductors react with oxygen in the air and form a disordered surface layer, which must be removed before growing these oxides on the semiconductor. For silicon, removal is relatively easy — researchers heat the semiconductor in vacuum. This approach, however, doesn’t work well with gallium arsenide.

Instead, the research team coated a clean surface of a gallium arsenide wafer with a layer of arsenic. The arsenic protected the semiconductor’s surface from the air while they transferred the wafer into an instrument that grows oxides using a method called molecular beam epitaxy. This allows one material to grow on another while maintaining an ordered crystal structure across the interface.

Next, the researchers gently heated the wafer to evaporate the thin arsenic layer, exposing the pristine semiconductor surface beneath. They then grew an oxide called SrTiO3 on the gallium arsenide and, immediately after, another oxide layer of GdTiO3. This process formed a 2DEG between the oxides.

Gallium arsenide is but one of a whole class of materials called III-V semiconductors, and this work opens a path to integrate oxide 2DEGs with others.

“The ability to couple or to integrate these interesting oxide two-dimensional electron gases with gallium arsenide opens the way to devices that could benefit from the electrical and optical properties of the semiconductor,” Kornblum said. “This is a gateway material for other members of this family of semiconductors.”

Xilinx, Inc. (NASDAQ: XLNX) today announced that its board of directors has appointed Victor Peng as president and chief executive officer, effective January 29, 2018.  Peng will become the fourth CEO in Xilinx’s history and takes the helm of the global market leader of programmable semiconductor products at a time of increasing momentum and opportunity.

“Victor is unique in his ability to translate vision and strategy into world-class execution and has an incredible ability to inspire and lead transformation.  He has been the architect of Xilinx’s innovations for the past decade and will move the company forward with the speed required to capitalize on the opportunities in front of us,” said Dennis Segers, chairman of the board of Xilinx. “Victor is a proven leader with exceptional business acumen and a deep, unwavering dedication to customers. The BOD is thrilled to appoint Victor CEO as the company enters its next chapter of expanded innovation and growth.”

“I’m honored to have been chosen to lead Xilinx at such a dynamic time in our industry,” said Peng. “The world of technology is changing rapidly, and I plan to architect Xilinx to take advantage of where I see the greatest opportunities for transformational growth.  Xilinx is in a rare position of strength and is poised to capitalize on the next shift in computing.  By focusing on delivering unique value to new areas as well as our traditional markets, I plan to accelerate the company’s growth and create the next wave of shareholder value.”

Since joining the company in 2008, Peng has spearheaded industry-leading strategy and technical shifts across the company’s portfolio of products and services, resulting in three consecutive generations of core product leadership and significant technology breakthroughs in integration and programming.  Most recently, he served as Chief Operating Officer and was appointed as a member of the board of directors in October 2017.

Before joining Xilinx, Peng served as corporate vice president of the graphics products group (GPG) silicon engineering at AMD, where he also served as a key leader in AMD’s central silicon engineering team supporting graphics, console game products, CPU chipset and consumer business units. Peng earned a bachelor’s in electrical engineering from Rensselaer Polytechnic Institute, and a master’s in electrical engineering from Cornell University.

Peng, 57, succeeds Moshe Gavrielov, 63, who will step down as CEO and from the board of directors on January 28, as part of a previously announced CEO succession plan.

IC Insights is currently researching and writing its 21st edition of The McClean Report, which will be released later this month.  As part of the report, a listing of the 2017 top 50 fabless IC suppliers will be presented.

Figure 1 shows the top 10 ranking of fabless IC suppliers for 2017.  Two China-based fabless companies made the top 10 ranking last year—HiSilicon, which sells most of its devices as internal transfers to smartphone supplier Huawei, and Unigroup, which includes the IC sales of both Spreadtrum and RDA. Fabless company IC sales are estimated to have exceeded $100 billion in 2017, the first time this milestone has been reached.

Figure 1

Figure 1

Unlike the relatively close annual market growth relationship between fabless IC suppliers and foundries, fabless IC company sales growth versus IDM (integrated device manufacturers) IC supplier growth has typically been very different (Figure 2).  The first time IDM IC sales growth outpaced fabless IC company sales growth was in 2010 when IDM IC sales grew 35% and fabless IC company sales grew 29%.  Since very few fabless semiconductor suppliers participate in the memory market, the fabless suppliers did not receive much of a boost from the surging DRAM and NAND flash memory markets in 2010, which grew 75% and 44%, respectively.  However, the fabless IC suppliers once again began growing faster than the IDMs beginning in 2011 and this trend continued through 2014.

Figure 2

Figure 2

In 2015, for only the second time on record, IDM IC sales “growth” (-1%) outpaced fabless IC company sales “growth” (-3%).  The primary cause of the fabless companies’ 2015 sales decline was Qualcomm’s steep 17% drop in sales. Much of the sharp decline in Qualcomm’s sales that year was driven by Samsung’s increased use of its internally developed Exynos application processors in its smartphones instead of the application processors it had previously sourced from Qualcomm.  Although Qualcomm’s sales continued to decline in 2016, the fabless companies’ sales in total (5%) once again outpaced the growth from IDM’s (3%).

In 2017, the market behaved very similarly to 2010, when strong growth in the memory market propelled the IDM IC sales growth rate higher than the fabless IC supplier growth rate.  With the total memory market, a market in which the fabless IC companies have very little share, surging by 58% last year, IDM IC sales growth easily outpaced fabless company IC sales growth in 2017.

Carbon nanotubes bound for electronics need to be as clean as possible to maximize their utility in next-generation nanoscale devices, and scientists at Rice and Swansea universities have found a way to remove contaminants from the nanotubes.

Rice chemist Andrew Barron, also a professor at Swansea in the United Kingdom, and his team have figured out how to get nanotubes clean and in the process discovered why the electrical properties of nanotubes have historically been so difficult to measure.

Scientists at Rice and Swansea universities have demonstrated that heating carbon nanotubes at high temperatures eliminates contaminants that make nanotubes difficult to test for conductivity. They found when measurements are taken within 4 microns of each other, regions of depleted conductivity caused by contaminants overlap, which scrambles the results. The plot shows the deviation when probes test conductivity from minus 1 to 1 volt at distances greater or less than 4 microns. Credit: Barron Research Group/Rice University

Scientists at Rice and Swansea universities have demonstrated that heating carbon nanotubes at high temperatures eliminates contaminants that make nanotubes difficult to test for conductivity. They found when measurements are taken within 4 microns of each other, regions of depleted conductivity caused by contaminants overlap, which scrambles the results. The plot shows the deviation when probes test conductivity from minus 1 to 1 volt at distances greater or less than 4 microns. Credit: Barron Research Group/Rice University

Like any normal wire, semiconducting nanotubes are progressively more resistant to current along their length. But over the years, conductivity measurements of nanotubes have been anything but consistent. The Rice-Swansea team wanted to know why.

“We are interested in the creation of nanotube-based conductors, and while people have been able to make wires, their conduction has not met expectations,” Barron said. “We wanted to determine the basic science behind the variability observed by other researchers.”

They discovered that hard-to-remove contaminants — leftover iron catalyst, carbon and water — could easily skew the results of conductivity tests. Burning those contaminants away, Barron said, creates new possibilities for carbon nanotubes in nanoscale electronics.

The new study appears in the American Chemical Society journal Nano Letters.

The researchers first made multiwalled carbon nanotubes between 40 and 200 nanometers in diameter and up to 30 microns long. They then either heated the nanotubes in a vacuum or bombarded them with argon ions to clean their surfaces.

They tested individual nanotubes the same way one would test any electrical conductor: by touching them with two probes to see how much current passes through the material from one tip to the other. In this case, tungsten probes were attached to a scanning tunneling microscope.

In clean nanotubes, resistance got progressively stronger as the distance increased, as it should. But the results were skewed when the probes encountered surface contaminants, which increased the electric field strength at the tip. And when measurements were taken within 4 microns of each other, regions of depleted conductivity caused by contaminants overlapped, which further scrambled the results.

“We think this is why there’s such inconsistency in the literature,” Barron said. “If nanotubes are to be the next-generation lightweight conductor, then consistent results, batch-to-batch and sample-to-sample, are needed for devices such as motors and generators as well as power systems.”

Heating the nanotubes in a vacuum above 200 degrees Celsius (392 degrees Fahrenheit) reduced surface contamination, but not enough to eliminate inconsistent results, they found. Argon ion bombardment also cleaned the tubes but led to an increase in defects that degrade conductivity.

Ultimately the researchers discovered vacuum annealing nanotubes at 500 degrees Celsius (932 Fahrenheit) reduced contamination enough to measure resistance accurately.

Barron said engineers who use nanotube fibers or films in devices currently modify the material through doping or other means to get the conductive properties they require. But if the source nanotubes are sufficiently decontaminated, they should be able to get the desired conductivity by simply putting their contacts in the right spot.

“A key result of our work is that if contacts on a nanotube are less than 1 micron apart, the electronic properties of the nanotube change from conductor to semiconductor, due to the presence of overlapping depletion zones, which shrink but are still present even in clean nanotubes,” Barron said.

“This has a potential limiting factor on the size of nanotube-based electronic devices,” he said. “Carbon-nanotube devices would be limited in how small they could become, so Moore’s Law would only apply to a point.”