Category Archives: Wafer Processing

SEMI, the global industry association representing the electronics manufacturing supply chain, today reported that worldwide semiconductor manufacturing equipment billings reached US$14.3 billion for the third quarter of 2017.

Quarterly billings of US$14.3 billion set an all-time record for quarterly billings, exceeding the record level set in the second quarter of this year. Billings for the most recent quarter are 2 percent higher than the second quarter of 2017 and 30 percent higher than the same quarter a year ago. Sequential regional growth was mixed for the most recent quarter with the strongest growth in Europe. Korea maintained the largest market for semiconductor equipment for the year, followed by Taiwan and China. The data are gathered jointly with the Semiconductor Equipment Association of Japan (SEAJ) from over 95 global equipment companies that provide data on a monthly basis.

Quarterly Billings Data by Region in Billions of U.S. Dollars
Quarter-Over-Quarter Growth and Year-Over-Year Rates by Region
3Q2017
2Q2017
3Q2016
3Q2017/2Q2017
3Q2017/3Q2016
Korea
4.99
4.79
2.09
4%
139%
Taiwan
2.37
2.76
3.46
-14%
-32%
China
1.93
2.51
1.43
-23%
35%
Japan
1.73
1.55
1.29
11%
34%
North America
1.50
1.23
1.05
22%
43%
Europe
1.06
0.66
0.53
61%
100%
Rest of World
0.74
0.62
1.13
20%
-34%
Total
14.33
14.11
10.98
2%
30%

Source: SEMI (www.semi.org) and SEAJ (http://www.seaj.or.jp)

The Equipment Market Data Subscription (EMDS) from SEMI provides comprehensive market data for the global semiconductor equipment market. A subscription includes three reports: the monthly SEMI Billings Report, which offers a perspective of the trends in the equipment market; the monthly Worldwide Semiconductor Equipment Market Statistics (WWSEMS), a detailed report of semiconductor equipment billings for seven regions and 24 market segments; and the SEMI Semiconductor Equipment Forecast, which provides an outlook for the semiconductor equipment market. More information is also available online: www.semi.org/en/MarketInfo/EquipmentMarket.

By Walt Custer, Custer Consulting

SEMICON Europa 2017 and productronica were co-located November 14 to 17 at Messe Munchen in Munich, Germany. Attendance was very good and the mood was upbeat.

The third quarter of this year has seen broad growth both globally and also for the European electronic supply chain.

Chart 1 shows 3Q’17/3Q’16 growth by electronic sector for the world. SEMI and PCB process equipment and semiconductors stand out but almost all key sectors expanded.

Custer-Chart-1-Global-Elec-

Chart 2 shows third quarter growth for Europe.  SEMI equipment leads but the third quarter Eurozone expansion was broad based.

Custer-Chart-2-EUropean-Ele

At productronica, Custer Consulting presented at the “Business Outlook for the Global Electronic Supply Chain” event (with emphasis on Europe).  For a copy of Walt’s charts, please email [email protected].

GLOBALFOUNDRIES and Ayar Labs, a startup bringing optical input/output (I/O) to silicon chips, today announced a strategic collaboration to co-develop and commercialize differentiated silicon photonic technology solutions. The companies will develop and manufacture Ayar’s novel CMOS optical I/O technology, using GF’s 45nm CMOS fabrication process, to deliver an alternative to copper I/O that offers up to 10x higher bandwidth and up to 5x lower power. This cost-effective solution is integrated in-package with customer ASICs as a multi-chip module, and improves data speed and energy efficiency in cloud servers, datacenters and supercomputers. As part of the agreement, GF has also invested an undisclosed amount in Ayar Labs.

Modern data centers and cloud applications require high-performance, power-hungry chips to process and analyze huge volumes of data in real time. Growth in chip I/O capabilities has not matched exponential increases in computing power, because of physical limitations in electrical data transmission. Optical I/O, which leverages optical components on the CMOS die to transmit data at rapid speeds, will be a key enabler to overcoming the limitations of today’s data center interconnects. In addition, Ayar’s technology reduces power consumption at both the network and processor level.

“GF has demonstrated true technology leadership in recognizing optical I/O as the inevitable next step as we move into a More than Moore world,” said Alex Wright-Gladstein, CEO at Ayar Labs. “This collaboration between Ayar and GF could improve chip communication bandwidth by more than an order of magnitude and at lower power, and is a validation of Ayar’s viability in the current semiconductor ecosystem. This collaboration will unlock a larger market opportunity, expanding both our and GF’s customer base. We look forward to working with GF to help solve the interconnect problems of today’s chips and create greater value for our customers than if both companies worked independently.”

“The Ayar Labs team has been designing cutting-edge silicon photonics components on GF’s technology for the past eight years and has achieved exceptional results,” said Mike Cadigan, senior vice president of global sales and business development at GF. “Our strategic collaboration builds on our relationship, leveraging GF’s silicon photonics IP portfolio and our world-class manufacturing expertise to enable faster and more energy-efficient computing systems for data centers.”

The collaboration brings together Ayar Labs’ patented IP in optical technology with GF’s best-in-class expertise in silicon photonics to co-develop optical solutions that will be fabricated using GF’s process technology. The availability of this technology, including certain Design IP cores, will enable internet service providers, system vendors and communication systems to push data capacity to 10 Tera bits per second (Tbps) and beyond, while maintaining the low energy and cost of optical-based interconnects.

Smartphones and computers wouldn’t be nearly as useful without room for lots of apps, music and videos.

Devices tend to store that information in two ways: through electric fields (think of a flash drive) or through magnetic fields (like a computer’s spinning hard disk). Each method has advantages and disadvantages. However, in the future, our electronics could benefit from the best of each.

“There’s an interesting concept,” says Chang-Beom Eom, the Theodore H. Geballe Professor and Harvey D. Spangler Distinguished Professor of Materials Science and Engineering at the University of Wisconsin-Madison. “Can you cross-couple these two different ways to store information? Could we use an electric field to change the magnetic properties? Then you can have a low-power, multifunctional device. We call this a ‘magnetoelectric’ device.”

In research published recently in the journal Nature Communications, Eom and his collaborators describe not only their unique process for making a high-quality magnetoelectric material, but exactly how and why it works.

Physics graduate student Julian Irwin checks equipment in the lab of materials science and engineering Professor Chang-Beom Eom, where researchers have produced a material that could exhibit the best qualities of both solid-state and spinning disk digital storage. Credit: Sarah Page/UW-Madison College of Engineering

Physics graduate student Julian Irwin checks equipment in the lab of materials science and engineering Professor Chang-Beom Eom, where researchers have produced a material that could exhibit the best qualities of both solid-state and spinning disk digital storage. Credit: Sarah Page/UW-Madison College of Engineering

Magnetoelectric materials — which have both magnetic and electrical functionalities, or “orders” — already exist. Switching one functionality induces a change in the other.

“It’s called cross-coupling,” says Eom. “Yet, how they cross-couple is not clearly understood.”

Gaining that understanding, he says, requires studying how the magnetic properties change when an electric field is applied. Up to now, this has been difficult due to the complicated structure of most magnetoelectric materials.

In the past, says Eom, people studied magnetoelectric properties using very “complex” materials, or those that lack uniformity. In his approach, Eom simplified not only the research, but the material itself.

Drawing on his expertise in material growth, he developed a unique process, using atomic “steps,” to guide the growth of a homogenous, single-crystal thin film of bismuth ferrite. Atop that, he added cobalt, which is magnetic; on the bottom, he placed an electrode made of strontium ruthenate.

The bismuth ferrite material was important because it made it much easier for Eom to study the fundamental magnetoelectric cross-coupling.

“We found that in our work, because of our single domain, we could actually see what was going on using multiple probing, or imaging, techniques,” he says. “The mechanism is intrinsic. It’s reproducible — and that means you can make a device without any degradation, in a predictable way.”

To image the changing electric and magnetic properties switching in real time, Eom and his colleagues used the powerful synchrotron light sources at Argonne National Laboratory outside Chicago, and in Switzerland and the United Kingdom.

“When you switch it, the electrical field switches the electric polarization. If it’s ‘downward,’ it switches ‘upward,'” he says. “The coupling to the magnetic layer then changes its properties: a magnetoelectric storage device.”

That change in direction enables researchers to take the next steps needed to add programmable integrated circuits — the building blocks that are the foundation of our electronics — to the material.

While the homogenous material enabled Eom to answer important scientific questions about how magnetoelectric cross-coupling happens, it also could enable manufacturers to improve their electronics.

“Now we can design a much more effective, efficient and low-power device,” he says.

The semiconductor industry continued its upward trend in the third quarter of 2017, notching 12 percent sequential growth with strength across all application markets, according to IHS Markit (Nasdaq: INFO). Global revenue totaled $113.9 billion, up from $101.7 billion in the second quarter of 2017.

As memory prices remain high and the wireless market continues to see strong demand through the fourth quarter, 2017 is shaping up to be a record-breaking year for the semiconductor industry. IHS Markit projects that semiconductor revenue will reach a record-high $428.9 billion in 2017, representing a year-over-year growth rate of 21 percent.

Key growth drivers

All application end markets posted sequential growth over the prior quarter, with wireless communications and data processing categories leading the pack.

Revenue from wireless applications grew faster sequentially in the third quarter of 2017 than any of the other high-level application markets. Semiconductor revenue from wireless applications was a record high $34.8 billion in the third quarter, representing nearly 31 percent of the total semiconductor market. IHS Markit anticipates an even bigger fourth quarter for wireless applications, projecting $37.5 billion in revenue — and more than $131 billion for the full-year 2017.

As the wireless market evolves, this growth can be attributed to a number of factors. ”More complex and comprehensive smartphone systems on a chip are supporting applications such as augmented reality and computational photography,” said Brad Shaffer, senior analyst for wireless semiconductors and applications at IHS Markit. “Premium smartphones have increasing amounts of memory and storage. The radio frequency content in these smartphones has also grown considerably over the past few product generations, with many high-end smartphones now supporting gigabit LTE mobile broadband speeds.”

The memory markets proved once again to be the driving force and highest-growing segment for semiconductors in the third quarter of 2017. “The DRAM industry had another record quarter with $19.8 billion in revenue, exceeding the prior record by more than $3 billion,” said Mike Howard, director for DRAM memory and storage research at IHS Markit. “Prices and shipments were up during the quarter as strong demand for mobile and server DRAM continued to propel the market.”

Top_5_memory

The NAND industry had another record quarter as well, growing 12.9 percent in the third quarter of 2017, with total revenue reaching $14.2 billion. “Pricing was flat in the quarter, as seasonally strong demand driven by the mobile and solid-state drive segments was able to offset moderate shipment growth,” said Walter Coon, director for NAND flash technology research at IHS Markit. “The market is expected to soften exiting 2017 and into early next year, as the industry transition to 3D NAND technology continues to progress and the market enters a traditionally slower demand period.”

Manufacturer moves

Samsung officially passed Intel to become the number-one semiconductor supplier in the world in the third quarter of 2017, growing 14.9 percent sequentially. Intel now comes in at number two, with SK Hynix securing the third rank in terms of semiconductor revenue for the third quarter.

top_5_semiconductor

Among the top 20 semiconductor suppliers, Apple and Advanced Micro Devices (AMD) achieved the highest revenue growth quarter over quarter by 46.6 percent and 34.3 percent, respectively.

There was a good deal of market share movement within the top 10 suppliers throughout the third quarter as well. In terms of semiconductor revenue, Qualcomm surpassed Broadcom Limited to secure the number-five spot, while nVidia made its way into the top 10 ranking for the first time ever. At this time last year, the top five semiconductor companies controlled 40 percent market share of the entire industry. The top five gained 4.2 percent more market share this year over last year, while comprising three memory companies instead of the previous two.

More information on this topic can be found in the latest release of the Semiconductor Competitive Landscaping Tool (CLT) from the IHS Markit Semiconductor Competitive Landscape CLT Intelligence Service.

North America-based manufacturers of semiconductor equipment posted $2.02 billion in billings worldwide in October 2017 (three-month average basis), according to the October Equipment Market Data Subscription (EMDS) Billings Report published today by SEMI.

SEMI reports that the three-month average of worldwide billings of North American equipment manufacturers in October 2017 was $2.02 billion.The billings figure is 1.8 percent lower than the final September 2017 level of $2.05 billion, and is 23.7 percent higher than the October 2016 billings level of $1.63 billion.

“Equipment billings dipped in October, the fourth consecutive monthly decline during this record spending year,” said Ajit Manocha, president and CEO of SEMI. “In spite of this seasonal weakness, we expect equipment spending to increase by 30 percent or more this year and are positive about growth in 2018.”

The SEMI Billings report uses three-month moving averages of worldwide billings for North American-based semiconductor equipment manufacturers. Billings figures are in millions of U.S. dollars.

Billings
(3-mo. avg)
Year-Over-Year
May 2017
$2,270.5
41.8%
June 2017
$2,300.3
34.1%
July 2017
$2,269.7
32.9%
August 2017
$2,181.8
27.7%
September 2017 (final)
$2,054.8
37.6%
October 2017 (prelim)
$2,017.0
23.7%

Source: SEMI (www.semi.org), November 2017

 

SPTS Technologies, an Orbotech company and a supplier of advanced wafer processing solutions for the global semiconductor and related industries, today announced it has won an order for its Omega plasma etch system from Chengdu HiWafer Semiconductor Co., Ltd (HiWafer), China’s first pure-wafer foundry, to establish their new gallium nitride (GaN) on silicon carbide (SiC) production line. SPTS’s Synapse and ICP process modules on an Omega c2L platform will etch SiC backside vias (BSV) and GaN epitaxial layers to manufacture high power radio frequency (RF) devices. The high rate Omega system was selected over the competition because the Synapse provided superior SiC etch rates while the ICP module delivered improved selectivity for GaN etch.

“HiWafer is already a well-established Chinese foundry producer of gallium arsenide based pHEMT and HBT RF devices currently used in 4G communication, and they are an early adopter of SiC and GaN materials for use in high-end RF devices that target the worldwide 5G protocol,” stated Kevin Crofton, President of SPTS Technologies and Corporate Executive Vice President at Orbotech. “This leadership position is important as Power and RF applications are high on the ‘Made in China 2025’ agenda for promoting domestic production of semiconductor devices, and companies like HiWafer are well-positioned to contribute to realizing this national initiative. Our leadership in high rate etching of SiC and other dielectric materials will support HiWafer to provide manufacturing solutions for the coming 5G wave.”

Mr. Nengwu Gao, General Manager of HiWafer, stated, “Orbotech’s SPTS Technologies is a recognized leader in compound wafer processing solutions to the global power and RF device industries. The addition of SPTS’s Omega plasma etch system gives us the tools to compete in GaN on SiC RF technology in telecoms and transportation applications, including railway systems. Acquiring this capability enables us to explore new applications and supports our ambitions to become a highly profitable and successful semiconductor foundry.”

Leti, a technology research institute of CEA Tech, announced that Emmanuel Sabonnadiere has been named CEO, succeeding Marie-Noelle Semeria.

Emmanuel SABONNADIERE  P_ Jayet-CEA-010Sabonnadiere, who has more than 25 years of executive leadership experience in a variety of large technology environments, joins Leti from CEA Tech, where he led the industrial-partnership program. He brings a strong background in new-technology development with broad private-sector expertise in operational excellence, team building and guiding multicultural organizations in business transformation in Europe and globally.

As Leti’s chief executive officer, Sabonnadiere leads the activities of one of Europe’s largest micro- and nanotechnologies research institutes, which employs approximately 1,900 scientists and engineers, has a portfolio of 2,700 patents and has launched more than 60 startups.

“Success in today’s demanding international digital landscape requires a combination of deep technological expertise, advanced platforms, a commitment to customer and partner success and a shared excitement and agility about the new opportunities,” Sabonnadiere said. “This is where Leti is today, and I am very excited to join this world-class team to develop the solutions that will bring digital innovations to the benefit of leading technology companies around the world.”

Prior to joining CEA, Sabonnadiere was CEO of the Philips Lighting’s Business Group Professional in Amsterdam. From 2008 to 2014, he was CEO and chairman of General Cable Europe in Barcelona, and from 2005 to 2008 he served as CEO of NKM Noell in Wurzburg, Germany. Before that, he served as vice president of Alstom T&D for five years. Early in his career, he held multiple positions at Schneider Electric, including managing director of development for equipment units.

During his career, he has designed and implemented strategic plans for process optimization, product redesign-to-costs, market repositioning and system development.

Sabonnadiere holds a Ph.D. degree in physics from the Ecole Centrale de Lyon, an MBA degree from Ecole Supérieure des Affaires de Grenoble and an engineering degree in information technology from the Université Technologie Compiègne.

Sabonnadiere is a fully qualified instructor at the ski school in Les Ménuires, and member of the advisory board of IAC.

Cadence Design Systems, Inc. (NASDAQ: CDNS) today announced that Anirudh Devgan, executive vice president and general manager of the Digital & Signoff Group and the System & Verification Group, has been appointed president of Cadence, effective immediately.

Dr. Devgan will report to Lip-Bu Tan, Cadence chief executive officer. Together, they will further the company’s System Design Enablement strategy by accelerating the momentum in the core electronic design automation (EDA) business and delivering to the expanding needs of its growing customer base.

As Cadence’s President, Dr. Devgan will oversee Cadence’s EDA products, including the digital implementation and signoff, functional verification, custom IC design, PCB and packaging businesses. Additionally, he will be responsible for the corporate strategy, marketing ­and business development functions.

“This is an exciting time for Cadence, and Anirudh will play a key leadership role as we capture opportunities that are being driven by groundbreaking trends in high-performance and edge computing, automotive electronics and machine learning, among others,” said Lip-Bu Tan, CEO of Cadence. “Anirudh is a visionary and an innovator and a strong team leader with broad operational experience. Both Cadence and its customers will benefit from his enhanced role. I am delighted to partner with him to further our System Design Enablement strategy by accelerating the strong momentum in our existing businesses and by expanding into new areas. The Cadence Board and management team join me in congratulating Anirudh on his promotion.”

“It is an honor to step into the role of president as Cadence continues to execute well across all areas of our business,” said Anirudh Devgan. “I look forward to working closely with Lip-Bu and my talented colleagues to accelerate our momentum and drive further growth.”

Anirudh Devgan is a 25-year industry veteran. Prior to joining Cadence in 2012, he was at Magma Design Automation, Inc. for seven years where he was general manager of the Custom Design Business Unit. He also spent 12 years at IBM in a variety of technical and management roles. He received numerous awards there, including the IBM Outstanding Innovation award. Dr. Devgan is an IEEE Fellow and has numerous research papers and patents. He received a Bachelor of Technology degree in electrical engineering from the Indian Institute of Technology, Delhi, and M.S. and Ph.D. degrees in electrical and computer engineering from Carnegie Mellon University.

For the first time, physicists have developed a technique that can peer deep beneath the surface of a material to identify the energies and momenta of electrons there.

The energy and momentum of these electrons, known as a material’s “band structure,” are key properties that describe how electrons move through a material. Ultimately, the band structure determines a material’s electrical and optical properties.

The team, at MIT and Princeton University, has used the technique to probe a semiconducting sheet of gallium arsenide, and has mapped out the energy and momentum of electrons throughout the material. The results are published today in the journal Science.

By visualizing the band structure, not just at the surface but throughout a material, scientists may be able to identify better, faster semiconductor materials. They may also be able to observe the strange electron interactions that can give rise to superconductivity within certain exotic materials.

“Electrons are constantly zipping around in a material, and they have a certain momentum and energy,” says Raymond Ashoori, professor of physics at MIT and a co-author on the paper. “These are fundamental properties which can tell us what kind of electrical devices we can make. A lot of the important electronics in the world exist under the surface, in these systems that we haven’t been able to probe deeply until now. So we’re very excited — the possibilities here are pretty vast.”

Ashoori’s co-authors are postdoc Joonho Jang and graduate student Heun Mo Yoo, along with Loren Pfeffer, Ken West, and Kirk Baldwin, of Princeton University.

Pictures beneath the surface

To date, scientists have only been able to measure the energy and momentum of electrons at a material’s surface. To do so, they have used angle-resolved photoemission spectroscopy, or ARPES, a standard technique that employs light to excite electrons and make them jump out from a material’s surface. The ejected electrons are captured, and their energy and momentum are measured in a detector. Scientists can then use these measurements to calculate the energy and momentum of electrons within the rest of the material.

“[ARPES] is wonderful and has worked great for surfaces,” Ashoori says. “The problem is, there is no direct way of seeing these band structures within materials.”

In addition, ARPES cannot be used to visualize electron behavior in insulators — materials within which electric current does not flow freely. ARPES also does not work in a magnetic field, which can greatly alter electronic properties inside a material.

The technique developed by Ashoori’s team takes up where ARPES leaves off and enables scientists to observe electron energies and momenta beneath the surfaces of materials, including in insulators and under a magnetic field.

“These electronic systems by their nature exist underneath the surface, and we really want to understand them,” Ashoori says. “Now we are able to get these pictures which have never been created before.”

Tunneling through

The team’s technique is called momentum and energy resolved tunneling spectroscopy, or MERTS, and is based on quantum mechanical tunneling, a process by which electrons can traverse energetic barriers by simply appearing on the other side — a phenomenon that never occurs in the macroscopic, classical world which we inhabit. However, at the quantum scale of individual atoms and electrons, bizarre effects such as tunneling can occasionally take place.

“It would be like you’re on a bike in a valley, and if you can’t pedal, you’d just roll back and forth. You would never get over the hill to the next valley,” Ashoori says. “But with quantum mechanics, maybe once out of every few thousand or million times, you would just appear on the other side. That doesn’t happen classically.”

Ashoori and his colleagues employed tunneling to probe a two-dimensional sheet of gallium arsenide. Instead of shining light to release electrons out of a material, as scientists do with ARPES, the team decided to use tunneling to send electrons in.

The team set up a two-dimensional electron system known as a quantum well. The system consists of two layers of gallium arsenide, separated by a thin barrier made from another material, aluminum gallium arsenide. Ordinarily in such a system, electrons in gallium arsenide are repelled by aluminum gallium arsenide, and would not go through the barrier layer.

“However, in quantum mechanics, every once in a while, an electron just pops through,” Jang says.

The researchers applied electrical pulses to eject electrons from the first layer of gallium arsenide and into the second layer. Each time a packet of electrons tunneled through the barrier, the team was able to measure a current using remote electrodes. They also tuned the electrons’ momentum and energy by applying a magnetic field perpendicular to the tunneling direction. They reasoned that those electrons that were able to tunnel through to the second layer of gallium arsenide did so because their momenta and energies coincided with those of electronic states in that layer. In other words, the momentum and energy of the electrons tunneling into gallium arsenide were the same as those of the electrons residing within the material.

By tuning electron pulses and recording those electrons that went through to the other side, the researchers were able to map the energy and momentum of electrons within the material. Despite existing in a solid and being surrounded by atoms, these electrons can sometimes behave just like free electrons, albeit with an “effective mass” that may be different than the free electron mass. This is the case for electrons in gallium arsenide, and the resulting distribution has the shape of a parabola. Measurement of this parabola gives a direct measure of the electron’s effective mass in the material.

Exotic, unseen phenomena

The researchers used their technique to visualize electron behavior in gallium arsenide under various conditions. In several experimental runs, they observed “kinks” in the resulting parabola, which they interpreted as vibrations within the material.

“Gallium and arsenic atoms like to vibrate at certain frequencies or energies in this material,” Ashoori says. “When we have electrons at around those energies, they can excite those vibrations. And we could see that for the first time, in the little kinks that appeared in the spectrum.”

They also ran the experiments under a second, perpendicular magnetic field and were able to observe changes in electron behavior at given field strengths.

“In a perpendicular field, the parabolas or energies become discrete jumps, as a magnetic field makes electrons go around in circles inside this sheet,” Ashoori says.

“This has never been seen before.”

The researchers also found that, under certain magnetic field strengths, the ordinary parabola resembled two stacked donuts.

“It was really a shock to us,” Ashoori says.

They realized that the abnormal distribution was a result of electrons interacting with vibrating ions within the material.

“In certain conditions, we found we can make electrons and ions interact so strongly, with the same energy, that they look like some sort of composite particles: a particle plus a vibration together,” Jang says.

Further elaborating, Ashoori explains that “it’s like a plane, traveling along at a certain speed, then hitting the sonic barrier. Now there’s this composite thing of the plane and the sonic boom. And we can see this sort of sonic boom — we’re hitting this vibrational frequency, and there’s some jolt happening there.”

The team hopes to use its technique to explore even more exotic, unseen phenomena below the material surface.

“Electrons are predicted to do funny things like cluster into little bubbles or stripes,” Ashoori says. “These are things we hope to see with our tunneling technique. And I think we have the power to do that.”