Category Archives: Wafer Processing

Samsung Electronics Co., Ltd.today announced a successful network processor tape-out based on Samsung’s 14LPP (Low-Power Plus) process technology in close collaboration with eSilicon and Rambus. This achievement is built on Samsung’s cutting-edge foundry process and design infra for network applications, eSilicon’s complex ASIC and 2.5D design capability with its IP solutions, and Rambus’ high-speed 28G SerDes solution.

Samsung’s 14LPP process technology based on 3D FinFET structure has already been proven for its high performance and manufacturability through mass production track record. The next generation process for network application is 10LPP process which is based on 10LPE (Low-Power Early) of which mass production was started from last year for the first time in the industry. 10LPP process’ mass production will be started in this year end.

Additionally, Samsung named its newly developed full 2.5D turnkey solution, which connects a logic chip and HBM2 memory with an interposer, as I-CubeTM (Interposer-Cube) solution. This 14LPP network process chip is the first product that Samsung applied I-CubeTM solution together with Samsung’s HBM2 memory. The I-CubeTM solution will be essential to network applications for high-speed signaling, and it is expected to be adopted into other applications such as computing, server and AI in the near future.

“This successful 14nm network processor tape-out was combined with eSilicon’s proven design ability in network area and Rambus’ expertise in SerDes and Samsung’s robust process technology along with I-Cube solution,” said Ryan Lee, Vice President of Foundry Marketing Team at Samsung Electronics. “Our collaboration model will have a great influence on a network foundry segment and Samsung will keep developing its network foundry solution to be a meaningful total network solution provider aligned with its process roadmap from 14nm and 10nm to 7nm.”

“This project was a true collaboration between Samsung, Rambus and eSilicon. eSilicon is proud to bring its FinFET ASIC and interposer design skills along with our substantial 2.5D integration skills to the project,” said Patrick Soheili, Vice President of Product Management and corporate development at eSilicon. “Our HBM Gen2 PHY, custom flip-chip package design and custom memory designs also helped to optimize the power, performance and area for the project.”

“Networking OEMs are looking for high-quality leadership IP suppliers that can bring 28G backplane SerDes in advanced FinFET process nodes to market,” said Luc Seraphin, senior vice president and general manager of Rambus Memory and Interfaces Division. “Our success with Samsung and eSilicon is a testament that these industry-leading solutions are attainable when you bring leading companies together. This is the first of several other offerings we plan to bring to networking and enterprise ASIC markets around the globe.”

The Semiconductor Industry Association (SIA), representing U.S. leadership in semiconductor manufacturing, design, and research, this week announced its support for the House “Better Way” corporate tax reform proposal as an appropriate starting point for reform. The proposal is expected to be considered by Congress this year.

“The “Better Way” corporate tax reform blueprint would make America’s corporate tax system more competitive and allow U.S. semiconductor companies to grow, innovate, and create more jobs here in the United States,” said John Neuffer, president and CEO, Semiconductor Industry Association. “While there are many details of significance to our industry that need to be understood and addressed, we support the proposal as a framework for moving forward with tax reform.

“We recognize the debate is just getting underway. SIA intends to work closely with Congress and the Administration to pass corporate tax reform to improve the competitiveness of the United States as a location for semiconductor research, design, manufacturing, and export.”

North America-based manufacturers of semiconductor equipment posted $1.97 billion in billings worldwide in February 2017 (three-month average basis), according to the February Equipment Market Data Subscription (EMDS) Billings Report published today by SEMI.

SEMI reports that the three-month average of worldwide billings of North American equipment manufacturers in February 2017 was $1.97 billion. The billings figure is 6.1 percent higher than the final January 2017 level of $1.86 billion, and is 63.8 percent higher than the February 2016 billings level of $1.20 billion.

“Billings levels remain elevated as memory and foundry manufacturers continue to invest in advanced semiconductor technologies,” said Ajit Manocha, president and CEO of SEMI. “These investments are paving the way for the ramp of 3D NAND and 1X-nm devices.”

The SEMI Billings report uses three-month moving averages of worldwide billings for North American-based semiconductor equipment manufacturers. Billings figures are in millions of U.S. dollars.

 

Billings
(3-mo. avg)

Year-Over-Year

September 2016

$1,493.3

-0.1%

October 2016

$1,630.4

20.0%

November 2016

$1,613.3

25.2%

December 2016

$1,869.8

38.5%

January 2017 (final)

$1,859.4

52.3%

February 2017 (prelim)

$1,973.1

63.8%

Source: SEMI (www.semi.org), March 2017

 

SEMI ceased publishing the monthly North America Book-to-Bill report in January 2017.  The decision to discontinue the Book-to-Bill report was based on changes in reporting by some participants where the reporting of orders/bookings into the data collection program is no longer considered a necessary component of their industry analysis.

Research information that will be posted in the March Update to the 20th anniversary 2017 edition of IC Insights’ McClean Report shows that fabless IC suppliers represented 30% of the world’s IC sales in 2016 (up from only 18% ten years earlier in 2006).  As the name implies, fabless IC companies do not have an IC fabrication facility of their own.

Figure 1 depicts the 2016 fabless company share of IC sales by company headquarters location.  As shown, at 53%, the U.S. companies held the dominant share of fabless IC sales last year, although this share was down from 69% in 2010 (due in part to the acquisition of U.S.-based Broadcom by Singapore-based Avago).  Although Avago, now called Broadcom Limited after its merger with fabless IC supplier Broadcom became official on February 1, 2016, has fabrication facilities that produce III-V discrete devices, it does not possess its own IC fabrication facilities and is considered by IC Insights to be a fabless IC supplier.

Figure 1

Figure 1

Figure 2 shows that in 2009, there was only one Chinese company in the top-50 fabless IC supplier ranking as compared to 11 in 2016.  Moreover, since 2010, the largest fabless IC marketshare increase has come from the Chinese suppliers, which held a 10% share last year as compared to only 5% in 2010. However, when excluding the internal transfers of HiSilicon (over 90% of its sales go to its parent company Huawei), ZTE, and Datang, the Chinese share of the fabless market drops to about 6%.

Figure 2

Figure 2

European companies held only 1% of the fabless IC company marketshare in 2016 as compared to 4% in 2010.  The reason for this loss of share was the acquisition of U.K.-based CSR, the second largest European fabless IC supplier, by U.S.-based Qualcomm in 1Q15 and the purchase of Germany-based Lantiq, the third largest European fabless IC supplier, by U.S.-based Intel in 2Q15.  These acquisitions left U.K.-based Dialog ($1.2 billion in sales in 2016) as the only Europe-headquartered fabless IC supplier in the fabless top 50-company ranking last year (Norway-based Nordic Semiconductor just missed making the top 50 ranking with 2016 sales of $198 million).

There is also only one major fabless Japanese firm—Megachips, which saw its sales increase by 20% in 2016 (8% using a constant 2015 exchange rate), one major South Korean fabless IC company (Silicon Works), and one major Singapore-based (Broadcom Ltd.) fabless supplier.

Synopsys, Inc. (Nasdaq:  SNPS) today announced that TSMC has certified the complete suite of products in the Synopsys Galaxy Design Platform for the most current version of 12-nanometer (nm) FinFET process technology. This 12nm certification brings with it the broad body of design collateral, including routing rules, physical verification runsets, signoff-accurate extraction technology files, SPICE correlated timing and interoperable process design kits (iPDKs) for this latest FinFET process. Synopsys Custom Compiler design solution support is enabled through an iPDK.

To accelerate access to this power-efficient, high-density process, IC Compiler II place-and-route system has been enabled to support new standard cell architectures seamlessly co-existing with 16FFC intellectual property (IP). Recent collaborations have resulted in enhancements to IC Compiler II’s core placement and legalization engines ensuring maximum utilization while minimizing placement fragmentation and cell displacement. The 12nm ready iPDK enables designers to use Custom Compiler’s layout assistant features to shorten time in creating FinFET layouts.

“This power-efficient, high-density node offers a broad set of opportunities to our customers, enabling them to deliver highly differentiated products,” said Suk Lee, TSMC senior director, Design Infrastructure Marketing Division. “Our ongoing collaboration with Synopsys is helping expedite designer access to 12-nm process technology.”

“The long-standing collaboration between Synopsys and TSMC continues to be key in bringing accelerated access to new process technology nodes,” said Bijan Kiani, vice president of product marketing for the Design Group at Synopsys. “With the Galaxy Design Platform certified for 12nm readiness, our mutual customers are enabled to speed up development and deployment to accelerate their time-to-market.”

Versum Materials, Inc. (NYSE: VSM), a materials supplier to the semiconductor industry, announced today it received the “Excellent Performance Award” by the world’s largest dedicated semiconductor foundry, Taiwan Semiconductor Manufacturing Company Limited (TSMC). TSMC maintains a rigorous supply chain, and each year recognizes its most valuable suppliers who have made an outstanding contribution to the supply of advanced materials and equipment used in semiconductor manufacturing processes. On February 23, 2017, Versum Materials received the prestigious “Excellent Performance Award” from TSMC in the Taiwanese city of Hsinchu for its contributions to TSMC.

SMC recognized Versum Materials for developing a new formulated post etch residue remover, a sustainable alternative to the material previously supplied for cleaning aluminum interconnects and pads. The new product advances TSMC’s green manufacturing initiatives by removing undesirable organic solvents in the product, process and eventually the waste stream. Furthermore, the new product reduces the required number of post-cleaning steps and cuts energy use during the manufacturing process at TSMC.

TSMC also credited Versum Materials for the positive impact its increased local presence had around improving the development responsiveness and cycle time affiliated with the new product development in the advanced materials realm. Additionally, TSMC cited superior technical support and reliable supply for our precursor offerings in the Advanced Deposition Materials (ADM) platform.

“We thank TSMC for recognizing Versum Materials with this prestigious award. The development of this new product demonstrates the importance of collaborating with our customers to drive technology forward, while also creating differentiated value for the customer. By working closely together with TSMC, we helped to further reduce their products’ environmental footprints,” stated Edward Shober, Senior Vice President, Materials at Versum Materials. “This award reflects the commitment that the entire company provides to TSMC, including our marketing, commercial, technology, operations, supply chain, procurement, EH&S and engineering teams.”

Over 60,000 attendees are expected at SEMICON China opening tomorrow at Shanghai New International Expo Centre (SNIEC). SEMICON China (March 14-16) offers the latest in technology and innovation for the electronics manufacturing industry. FPD China is co-located with SEMICON China, providing opportunities in this related market. Featuring nearly 900 exhibitors occupying nearly 3,000 booths, SEMICON China is the largest gathering of its kind in the world.

Worldwide fab equipment spending is expected to reach an industry all-time record, to more than US$46 billion in 2017, according to the latest version of the SEMI (www.semi.org) World Fab Forecast. In 2018, the record may break again, with spending close to the $50 billion mark.  SEMI forecasts that China will be third ($6.7 billion) for regional fab equipment spending in 2017, but its spending in 2018 may reach $10 billion – which would be a 55 percent increase year-over-year, placing China in second place for worldwide fab equipment spending in 2018.

On March 14, keynotes at SEMICON China include SMIC chairman of the Board Zhou Zixue. ASE Group director and COO Tien Wu, ASML president and CEO Peter Wennink, Intel VP Jun He, Lam Research CEO Martin Anstice, TEL CTO Sekiguchi Akihisa and imec president and CEO Luc Van den hove.

SEMICON China programs expand attendees’ knowledge, networking reach, and business opportunities. Programs this year feature a broad and deep range:

  • CSTIC: On March 12-13, the China Semiconductor Technology International Conference (CSTIC) precedes SEMICON China. CSTIC is organized by SEMI and imec and covers all aspects of semiconductor technology and manufacturing.
  • Technical and Business Programs: 
    • March 14: China Memory Strategic Forum.
    • March 15: Building China’s IC Ecosystem, Green High-Tech Facility Forum, and Smart Manufacturing Forum, in addition Power & Compound Semiconductor Forum (Day 1).
    • March 16: Smart Automotive Forum, MEMS & Sensors Conference Asia, plus Power & Compound Semiconductor Forum (Day 2)
  • Tech Investment Forum: On March 15, an international platform to explore investment, M&A, and China opportunities.
  • Theme Pavilions:  SEMICON China also features six exhibition floor theme pavilions: IC Manufacturing, LED and Sapphire, ICMTIA/Materials, MEMS, Touch Screen and OLED.
  • Networking Events: SEMI Industry Gala, China IC Night, and SEMI Golf Tournament

For additional information on sessions and events at SEMICON China 2017, please visit www.semiconchina.org/en/4.

Metamaterials don’t exist in nature, but their ability to make ultra-thin lenses and ultra-efficient cell phone antennas, bend light to keep satellites cooler and let photovoltaics absorb more energy mean they offer a world of possibilities.

Formed by nanostructures that act as “atoms,” arranged on a substrate to alter light’s path in ways no ordinary material can achieve, these surrogate substances can manipulate an incoming light beam to enable the creation of more efficient versions of ubiquitous, valuable devices — optical filters, lasers, frequency converters and devices that steer beams, for example.

But extensive commercial use of metamaterials has been restrained by the limitations imposed by the materials comprising them. Metal-based metamaterials are “lossy” (lose energy) at shorter wavelengths and can operate effectively only at low frequencies, such as the radio frequencies used by radar, before being overwhelmed by their own absorption. Silicon doesn’t emit light and can transmit it only in a limited wavelength range because of its narrow working range (bandgap). So neither class of material can create a metamaterial that will operate in the infrared and optical ranges, where most military and commercial applications would take place.

This three-resonator-thick III-V metasurface of cylindrical resonators illustrates three possible uses: The left light beam changes color as it passes through the metasurfaces, signifying that nonlinear harmonic generation is taking place that converts the light beam to a shorter wavelength. The blue trace in the middle shows a train of pulses passing through the surface. As they pass, the pulse width decreases due to pulse compression, which requires that the phase of the transmitted optical wave vary with the wavelength. The multilayer metasurfaces are able to achieve the correct phase variation -- something not possible with single layer metasurfaces. The beam on the right signifies that these metasurfaces can act as efficient emitters of light. Click on the thumbnail for a high-resolution image. Credit: (Illustration courtesy of Sandia National Laboratories)

This three-resonator-thick III-V metasurface of cylindrical resonators illustrates three possible uses: The left light beam changes color as it passes through the metasurfaces, signifying that nonlinear harmonic generation is taking place that converts the light beam to a shorter wavelength. The blue trace in the middle shows a train of pulses passing through the surface. As they pass, the pulse width decreases due to pulse compression, which requires that the phase of the transmitted optical wave vary with the wavelength. The multilayer metasurfaces are able to achieve the correct phase variation — something not possible with single layer metasurfaces. The beam on the right signifies that these metasurfaces can act as efficient emitters of light. Click on the thumbnail for a high-resolution image. Credit: (Illustration courtesy of Sandia National Laboratories)

Optical metamaterials enter the arena

Sandia National Laboratories researchers are helping lead the way to the use of III-V semiconductors as the building blocks of metamaterials. (III-V refers to elements in those columns in the periodic table.) Sandia researchers have published technical papers, including three in the past year, on work featuring materials like gallium-arsenide and aluminum-arsenide, which are more efficient than metals for optical metamaterial applications, with wider bandgap ranges than silicon. The work is promising enough to have been featured on the covers of two technical journals.

“There is very little work worldwide on all-dielectric metamaterials using III-V semiconductors,” said Sandia researcher Igal Brener, who leads the Sandia work with researchers Mike Sinclair and Sheng Liu. “Our advantage is Sandia’s vast access to III-V technology, both in growth and processing, so we can move pretty fast.”

Shinier than gold

The new Sandia dielectric materials — a kind of electrical insulator — offer more than just efficiency. They lose little incoming energy and can even be fabricated in multiple layers to form complex, three-dimensional meta-atoms that reflect more light than shiny gold surfaces, usually considered the ultimate in infrared reflectivity. The III-V materials also emit photons when excited — something that silicon, which can reflect, transmit and absorb — can’t do.

Another advantage is their highly variable outputs, across the color spectrum so they might be used to extend the wavelength range of lasers or for generating “entangled photons” for quantum computing.

Sandia’s approach also is attractive for its relatively simple method of forming the artificial atoms, known as resonators, that are the guts of the metamaterial.

Created under the supervision of Liu, the meta-atoms are a few hundred nanometers in diameter and made of many actual atoms. One of Liu’s improvements was to oxidize these tiny groupings around their perimeters to create layered coatings with a low index of refraction, rather than use a more expensive, time-consuming “flip-chip” bonding process. The complexity of previous methods was an obstacle to cost- and time-efficiency. Other Sandia researchers had used a variant of his simplification previously to make lasers, but not metamaterials, he said.

The oxidized, low-index surface surrounds the high-index core “like in wintertime, you have a coat surrounding you,” Liu said. “To confine light, you need a high refractive-index contrast.” Put another way, interior light bumping into the low-indexed oxide surface is herded back by the refractive difference so it travels along the high-index core.

Liu’s Sandia colleague Gordon Keeler achieved controlled oxidation simply by putting III-V materials in a hot oven and flowing water vapor over the sample. “It will oxidize at a certain rate,” Liu says. “The more material, the longer it takes.”

The man-made meta-atoms are sculpted in place during a lithographic process that permits researchers to make any pattern they chose for the placement of the metamaterial components. “We use simulations to direct us,” Liu said. Spacing is determined to some extent by the size of the manmade atoms.

Fractured cubic nanostructures store unusually large amounts of energy

The researchers experimented with cylindrical and cubic nanostructures, reducing the symmetry of the latter to achieve even better properties.

“Cylinders are much easier to fabricate and typically can be used for conventional metasurfaces,” said Brener. “But broken-symmetry cubes are crucial to obtain very sharp resonances. That’s the key issue of the paper.”

The idea of intentionally reducing the symmetry of a cubic resonator nanostructure originated five or six years ago, said Sinclair, with a serendipitous design that happened to break the intentionally symmetrical shape of the meta-atoms when the team tried to mimic a particular manufacturing flaw.

“During a Laboratory Directed Research and Development [LDRD] Metamaterials Grand Challenge, when we were first fabricating cubic resonators in our effort to see if we could get beyond microwaves into infrared and optical metamaterials, we were playing with the shape of resonators to try to simulate the effect of lithography errors. In one simulation, we happened to cut a corner of the cube and all of a sudden very sharp reflection bands appeared,” Sinclair said.

Prior to that discovery, dielectric resonator metamaterials only showed broad bands that didn’t trap much energy. The researchers found the new sharp resonances allowed greater energy storage — beneficial for efficient frequency conversion, and perhaps even for light emission and lasing.

Exploration of the crimped resonator had to wait for a later project, sponsored by the Department of Energy’s Office of Science. Salvatore Campione, building on previous work by Lorena Basilio, Larry Warne and William Langston — all of Sandia — used electromagnetic simulations to unravel precisely how the cubes trap light. Sandia’s Willie Luk measured the cubes’ reflective properties. Another LDRD grant currently supports research into metamaterial lasing.

“We feel we’ve created a pretty flexible platform for a lot of different kinds of devices,” Sinclair said.

The ongoing work is aided by Sandia’s John Reno, nationally known for growing extremely precise crystalline structures, who contributed the III-V wafers.

Three patents on aspects of the work have been submitted.

The field of metamaterials, an intersection of materials science, physics, nanotechnology and electrical engineering, aims to produce structures with unusual electromagnetic properties. Through the careful combination of multiple materials in a precise periodic arrangement, the resulting metamaterials exhibit properties that otherwise couldn’t exist, such as a negative index of refraction. Some metamaterials can even channel electromagnetic waves around their surfaces, rendering them invisible for certain wavelengths of light.

The precision needed for arranging a metamaterial’s constitutive parts, also known as inclusions, has been a challenging step in their development and application.

Now, University of Pennsylvania engineers have shown a way to make metamaterials with a single inclusion, providing easier fabrication, among other useful features.

Physical experiments showed that the location of the dielectric rod and the shape of the ENZ material did not effect the properties of the resulting metamaterial. Credit: University of Pennsylvania

Physical experiments showed that the location of the dielectric rod and the shape of the ENZ material did not effect the properties of the resulting metamaterial. Credit: University of Pennsylvania

Analogous to electronic “doping,” where adding a small amount of atomic impurities to a “pure” material gives it electronic properties necessary for many computational and sensing devices, this “photonic doping” would allow for new ways of sculpting and tailoring light-matter interactions, with future impact on optical technology, such as flexible photonics.

The study, published in the journal Science, was led by Nader Engheta, H. Nedwill Ramsey Professor of Electrical and Systems Engineering, together with members of his group, Iñigo Liberal, Ahmed M. Mahmoud, Yue Li and Brian Edwards.

“Just as in electronic doping, when adding a set of foreign atoms in an otherwise pure material can significantly alter the electronic and optical properties of the host,” Engheta said, “‘photonic doping’ means adding a foreign photonic object in a specialized photonic host structure can change the optical scattering of the original structure in a major way.”

The phenomenon works with a specific class of materials that have permittivity, a parameter that has to do with the electric response of the material, mathematically represented by the Greek letter epsilon, that is nearly zero.

The key quality of these epsilon-near-zero, or ENZ, materials is that the wave’s magnetic field is distributed uniformly throughout the two-dimensional ENZ hosts, regardless of their cross-sectional shape. Such ENZ materials occur either naturally or can be made by traditional metamaterial means.

Rather than engineer complicated periodic structures that significantly alter the optical and magnetic properties of such materials, Engheta and his group devised a way for a single inclusion in a 2-D ENZ structure to accomplish the same task: changing which wavelengths of light that will reflect or pass through, or altering the magnetic response of the structure

“If I want to change the way a piece of material interacts with light, I normally have to change all of it,” Engheta said, “Not here. If I place a single dielectric rod anywhere within this ENZ material, the entire structure will look different from the perspective of an external wave.”

The dielectric rod is a cylindrical structure made out of an insulating material that can be polarized. When inserted in a 2-D ENZ host, it can affect the magnetic field within this host and consequently can notably change the optical properties of the host ENZ material.

Because the wave’s magnetic field in the 2-D ENZ host has a uniform spatial distribution, the dielectric rod can be placed anywhere within the material. Incoming waves thus behave as if the host material has a significantly different set of optical properties. Since the rod does not need to be placed at a precise location, construction of such photonically doped structures may be achieved with relative ease.

Applying these metamaterial concepts via “photonic doping” has implications for information processing systems and applications within telecommunications.

“When we’re working with a wave, this photonic doping can be a new way for us to determine the path this wave takes from A to B within a device,” Engheta said. “With a relatively small change in the dielectric rod, we can make waves ‘go this way’ and ‘don’t go that way.’ That we only need to make a change to the rod, which is a tiny part of the host material, should help with the speed of the device, and, because the effect is the same for the ENZ host with arbitrary shape while keeping its cross-sectional area fixed, this property may be very useful for flexible photonics.”

Further research demonstrates more complicated ways of applying photonic doping to ENZ materials, such as adding multiple rods with different diameters.

“The dielectric property of the rod can be responsive to thermal, optical or electrical changes,” Engheta said. “That means we could use the host ENZ material as the read-out of a sensor, as it would transmit or reflect light due to changes in that rod. Adding more rods would allow for even finer tuning of the material’s response.”

Applied Materials, Inc. today announced Thomas J. Iannotti as chairman of the Board of Directors effective immediately. Mr. Iannotti succeeds Willem P. Roelandts, who has retired from the board. Mr. Iannotti joined Applied’s board in 2005. Prior to being named chairman, he served as chair of the board’s Human Resources and Compensation Committee and was a member of the Corporate Governance and Nominating Committee.

A veteran of the electronics industry for more than three decades, Mr. Iannotti is known for his global business, industry and operational expertise. He spent nine years as an executive at Hewlett-Packard Company, including Senior Vice President and General Manager, Enterprise Services from 2009 to 2011. Prior to Hewlett-Packard, Mr. Iannotti worked at Digital Equipment Corporation, a vendor of computer systems and software, and at Compaq Computer Corporation, a supplier of personal computing systems, after its acquisition of Digital Equipment Corporation.

“As a member of the Applied board, I have been inspired by the company’s ability to push the boundaries of technology and create innovations that drive the semiconductor and display industries forward,” said Mr. Iannotti. “I am honored to serve as chairman and would like to thank Wim Roelandts for his many contributions to Applied and the semiconductor industry during his remarkable career.”

“Tom brings deep knowledge of Applied, as well as strong industry and governance experience, to lead the board during one of the most exciting periods of innovation and growth in our company’s history,” said Gary Dickerson, president and CEO. “On behalf of everyone at Applied Materials, I thank Wim for his longtime service as a member of the board and for his leadership as chairman.”