Category Archives: Wafer Processing

POET Technologies Inc.(OTCQX:POETF) (TSX-V:PTK), a developer of opto-electronics fabrication processes for the semiconductor industry, today announced that on October 17, 2016, it entered into an Agreement with the Singapore Economic Development Board (EDB) to expand POET’s research and development (R&D) operations in Singapore.

POET, through its acquisition of DenseLight Semiconductors, reaffirmed its strategic intent to expand its R&D and manufacturing operations in Singapore. POET will establish an Integrated Photonics center within its current operations to further develop and commercialize differentiated photonics and opto-electronic products. This is expected to increase market penetration and enhance market acceptance of the POET portfolio as it is introduced. This center signifies the growing importance of integration in photonics applications as a means to drive increased adoption and improve POET’s competitive positioning. The Singapore operations will further the development and production of POET’s key technologies, including those developed with the joint program POET established with the Institute of Materials Research and Engineering (IMRE) in Singapore earlier this year. The planned initiatives are expected to gradually add up to 30 engineers and scientists to POET, as the R&D center is established.

“EDB’s support will be instrumental in helping us drive the growth of intellectual property, talent and operations in Singapore, thus providing a foundation for compound semiconductor and photonics growth in the region”, said Chairman Mr. Ajit Manocha. “I have been engaged with Singapore for much of my career and value the nurturing and enduring partnerships with the EDB throughout. We chose Singapore because of EDB’s initiative to grow the compound semiconductor and photonics ecosystem in the region, and we are thankful to the EDB for supporting our Integrated Photonics Center of Excellence in Singapore. The country’s business-friendly climate and support from government agencies truly set it apart. We look forward to continuing to work with the EDB as we accelerate the commercialization of our highly differentiated technologies serving a variety of applications and markets.”

“This support from the EDB could potentially allow POET and its subsidiaries, DenseLight and BB Photonics, to accelerate product and revenue growth by leveraging Singapore’s R&D efficiencies, infrastructure, learning institutions and human capital and its strong high-technology manufacturing base”, said CEO Dr. Suresh Venkatesan. “Current projects in Singapore include the research and development of the POET Platform for Display applications, as well as the commercialization of POET, DenseLight and BB Photonics Intellectual Property in the fast growing Data Communications and Sensing markets.

“EDB is committed to developing the compound semiconductor industry through partnerships with companies to perform critical R&D and manufacturing in Singapore. Innovations in compound semiconductor technology can enable the next generation of optical communication solutions needed for increasing requirements in data centers. We are delighted to partner with POET Technologies to lead DenseLight, a company with a strong Singapore core of talent and activities, to greater heights”, said Mr. Pee Beng Kong, Director for Electronics, EDB.

The Company is eligible to receive support up to a maximum of S$10,699,000 over five years pursuant to the EDB letter of offer, subject to headcount and expenditure thresholds. Should the terms of the support agreement with the EDB not be satisfied by the Company, the EDB reserves the right to request repayment of any support advanced to the Company.

By Ji-Won Cho, SEMI Korea

SEMI Korea has hosted a SEMI member event every year for its members since 2008 to provide networking opportunities and insight on the ever-changing issues in the industry. This year, over 225 SEMI members in Korea from 132 companies ─ including the chipmakers, Samsung and Dongbu Hitek ─ participated in SEMI Members Day on October 6. Almost 70 percent of the attendees were executive level. Five speakers shared their thought-provoking perspectives: global semiconductor outlook, technology trends, flexible AMOLED technology, autonomous vehicle, and robot industry.

Soo Kyum Kim, director at IDC Korea, presented “Global Semiconductor Industry Outlook.”  Kim pointed out that global semiconductor market will decrease 2.9 percent in 2016 and recover slightly 0.6 percent in 2017 while the dedicated foundry market will face a short correction. He also forecasted that the CAGR of global semiconductor market will be 2.6 percent between 2017 and 2020. This growth will be led by non-traditional areas; automotive, industrial and smart home. He believes that IoT and Intelligent system penetration will drive both MPU and MCU in processor market.

Worldwide-MCU-Opportunity

Sei Cheol Lee, principal analyst at NH Securities, presented “Semiconductor Technology Trends.” Lee discussed how the solid state drives (SSD) and UFS markets are rapidly growing and 3D NAND stack will move from 48 to 64 layers. Lee added that increasing layers will lead to more dry etch than wet etch in processes and incease in KrF patterning, PECVD/ALD,  and test. Lee forecasted that the test market will grow to $3 billion in 2017 from only $2.2 billion in 2016 due to high-end SSD and DDR4’s bus speed enhancement.

Minsu Kang, analyst at IHS Technology, spoke about the Flexible AMOLED Industry Outlook. According to his presentation, flexible displays are mainly used for smartwatch and smartphone, but set manufacturers are also trying to apply them with foldable or rollable form-factors. Flexible AMOLED has clear advantages for flexible display technology, in terms of form-factor, size, PPI and picture quality. He pointed out that flexible AMOLED was expected to increase to over 13 percent of OLED panel shipment in 2016, and it will continue to grow rapidly because more set manufacturers are adopting the technology. Apple may try to apply it to their smartphone in 2017.

Ji-won-Korea article Photo 1

Kang highlighted that many panel manufacturers have been trying to increase flexible AMOLED capacity since 2015, but need to develop experience. He added that the curved forms of flexible display will be the mainstream until 2020, but foldable forms may be the mainstream after.  It depends on how the innovation resonates with the user experience

Seyong Kim, senior manager at Renesas Electronics Korea, presented “Technology Trends of the Autonomous Vehicle.” He said it may be fully realized between 2025 and 2030. Each country is now focusing on establishing the safety standards as like ISO 26262 to gain the initiatives.

Concerning the connected car, he mentioned the most important issue was security. Kim also added that a growing autonomous vehicle industry will need more semiconductors but the market share likely will remain under 10 percent of the entire semiconductor market.

Ji-won-Korea article Photo 2

Dongkyeong Kim, head of R&D center at Future Robot, wrapped up the day with a presentation on Artificial Intelligence (AI) and Intelligent Robots in the semiconductor industry. Kim stated that development of semiconductor technology has driven the Big Data and AI eras and it will increasingly result in strong demand for semiconductors. According to Kim, globally the robot industry has invested 1.8 billion USD and 50 percent of the amount was invested by China in 2015.

The attendees were interested in the topics and an ongoing dialogue took place during the Q&A after each presentation. In the survey, more than 92 percent of attendees responded that they were satisfied. The attendees recommended additional topics for next year’s program, including equipment and materials outlook, advanced packaging market outlook, and technology roadmap.

Jin Soo Ko, VP of Teradyne said, “SEMI Members Day was the best in terms of agenda and contents since I attended from 2007. I am very satisfied with all programs and networking opportunities provided by SEMI.

Hyun-Dae Cho, president of SEMI Korea, said, “The SEMI Korea Members Day connects our members to peers and industry executives and gives first-hand information on the trends and technology in the industry. I hope SEMI members enjoyed the opportunities through this annual event.

For information on becoming a SEMI member, visit www.semi.org/en/Membership.

Semiconductor Manufacturing International Corporation (“SMIC”; NYSE:  SMI; SEHK: 981), the largest and most advanced foundry in mainland China, announces the laying of the foundation stone to mark the official launch of its capacity expansion project at SMIC’s TianJin facility. After the project’s completionSMIC TianJin is expected to become the world’s largest integrated 8-inch IC production line.

SMIC TianJin is located in the Xiqing Economic Technological Development Area, Tianjin, and currently has a mature 8-inch IC production line with a capacity of 45,000 wafers/month. After completion of the expansion project, SMIC TianJin’s capacity will reach 150,000 8-inch wafers/month. The project’s progress and capacity arrangement will depend on customers’ needs. The main product applications supported by the project include IoT related IC’s, fingerprint identification, power management, mixed signal processing, and automotive electronics.

The Chairman of SMIC, Dr. Zixue Zhou, said: “The launch of capacity expansion of our 8-inch production line is another milestone in the history of SMIC TianJin. SMIC TianJin has long been running at full capacity, and this expansion will significantly ease the balance of demand and supply and provide more high-quality capacity to our clients. Moreover, SMIC’s capacity distribution throughout mainland China will be further optimized.”

The TianJin Deputy Mayor, Mr. Shushan He, the Secretary of Xiqing Area, Mr. Xuewang Wang attended the ceremony. The Chairman of SMIC, Dr. Zixue Zhou, and the CEO and Executive Director of SMIC, Dr. Tzu-Yin Chiu, together laid the foundation stone for the new project.

Avery Dennison (NYSE:AVY), a developer of RFID-enabled solutions, and long-standing partner NXP Semiconductors N.V. (NASDAQ:NXPI), are proud to announce a new industry first innovation, providing 12-inch wafers for long range solutions in addition to the current industry standard 8-inch. This solution will deliver a significant increase in production capacity, improved assembly quality and efficiency, and most importantly, a reduction in manufacturing waste and electricity. Avery Dennison is the first to provide inlays with NXP’s new 12-inch offering.

A larger wafer diameter allows more semiconductor devices to be produced from a single wafer, doubling the amount of dies per wafer compared to existing 8-inch wafer formats. This increased utilization of existing materials simultaneously reduces both chemical and packaging waste and energy consumption.

The innovation is another positive step in making the manufacturing process more sustainable, while simultaneously increasing production to meet future industry demand. “We worked closely with NXP to create a solution that would truly offer a higher production output and at the same time be more sustainable,” said George Dyche, director, Global RFID Innovation and Product Line Management, Avery Dennison RFID.

The chips can also be incorporated into Avery Dennison’s SmartFace Technology, which removes the plastic material in RFID products and replaces it with a paper substrate to reduce environmental impact. SmartFace Technology has already been used in a number of Avery Dennison RFID Inlays and the introduction of the new wafer will reduce the environmental impact of RFID solutions further.  “Sustainability has long been part of our approach to do business together. We are proud to work closely with our partners across the entire value chain to address the environmental and social impacts of our solutions,”  added Helen Sahi, senior director, Sustainability, Avery Dennison.

“Bringing together both parties’ expertise, Avery Dennison and NXP introduce this innovation for more sustainability in semiconductor industry. Our collective responsibility drives us to work collaboratively to address the environmental and social impacts of our solution proactively, while the 12-inch wafers significantly increases NXP’s supply capacity,” said Ralf Kodritsch, segment manager RFID Solutions, NXP.

Businesses worldwide are recognizing the increasing value of RAIN RFID in this area. By building on innovation and providing technologies that directly address societal demands, exciting times and opportunities for the RAIN RFID industry lie ahead.

Researchers from MIPT’s Laboratory of 2D Materials’ Optoelectronics, Institute of Radioengineering and Electronics, and Tohoku University (Japan) have theoretically demonstrated the possibility of creating compact sources of coherent plasmons, which are the basic building blocks for future optoelectronic circuits. The way in which the device would operate is based on the unique properties of van der Waals heterostructures — composites of graphene and related layered materials. A paper detailing the study has been published in the Physical Review B journal.

The plasmon is a quasi-particle that is a “mixture” of oscillating electrons and the electromagnetic field coupled with them. Plasmons can be used to generate, transmit, and receive signals in integrated circuits. Plasmons can act as mediators between electrons and light waves in highly efficient photodetectors and sources, particularly in the actively explored terahertz range. It is interesting to note that plasmon energy can be stored at a length scale much smaller than the wavelength of light. This means that plasmonic devices can be far more compact than their photonic counterparts. The most “compressed” plasmons are those that are bound to the conducting planes, and these plasmons can be used to make the most compact optoelectronic devices.

But where can one find a conducting plane that supports ultra-confined plasmons? For more than forty years, such objects have been created by sequential growth on nanometer-thin semiconductors with affine crystal structures. In this process, certain layers are enriched with electrons and obtain good electrical conductivity. These “layer-cakes” are called heterostructures — Russian physicist Zhores Alferov was awarded the 2000 Nobel Prize in Physics for their development.

However, growing nanoscale layers is not the only way of obtaining flat semiconductors. During the last decade, researchers’ attention has been focused on a different, intrinsically two-dimensional material — graphene. Graphene is a one-atom-thick layer of carbon, and it can be obtained by simply slicing a graphite crystal. The study of the unique electronic properties of graphene (which are radically different from those of classical heterostructures) was marked by another Nobel prize awarded to the MIPT alumni Andre Geim and Konstantin Novoselov (2010). A great number of graphene-based devices have already been created, including transistors receiving high-frequency signals, ultrafast photodetectors and even the first prototypes of lasers. The properties of graphene can be further enhanced by placing it on another material with a similar crystal structure. Materials similar to graphene can essentially be used to create the “layer-cake” heterostructures mentioned above. In this case, however, the building blocks of the structures are joined by van der Waals forces, which is why they are called van der Waals heterostructures.

Band diagram of the graphene -- tungsten disulphide -- graphene structure explaining the principle of plasmon generation. The application of interlayer voltage V results in the enrichment of one layer by electrons (blue), and the emergence of free states (called holes) in the opposite layer (red). An electron can tunnel from an occupied state to an empty state (dashed line), and its excess energy can be spent to excite a plasmon (red wavy line). CREDIT © MIPT

Band diagram of the graphene — tungsten disulphide — graphene structure explaining the principle of plasmon generation. The application of interlayer voltage V results in the enrichment of one layer by electrons (blue), and the emergence of free states (called holes) in the opposite layer (red). An electron can tunnel from an occupied state to an empty state (dashed line), and its excess energy can be spent to excite a plasmon (red wavy line). CREDIT © MIPT

In their work, the researchers show that a heterostructure comprising two graphene layers separated by a thin layer of tungsten disulphide not only supports the compact two-dimensional plasmons, but can also generate them upon the application of interlayer voltage.

“The structure we are modeling is essentially the gain medium for plasmons,” explains Dmitry Svintsov, the first author of the research. “More common examples of gain media are the neon-helium mixture in a gas laser, or a semiconductor diode in a laser pointer. When passing through such a medium, the light is amplified, and if the medium is placed between two mirrors, the medium will generate the light by itself. The combination ‘gain medium plus mirrors’ is at the heart of any laser, while the gain medium for plasmons is a necessary element of a plasmonic laser, or spaser. If the gain medium is switched on and off, the plasmonic pulses can be obtained on demand, which could be used for signal transmission in integrated circuits. The plasmons generated in the gain medium can also be uncoupled from the graphene layers and propagate as photons in free space. This allows one to create tunable sources of terahertz and far infrared radiation.”

<> Band diagram of the graphene — tungsten disulphide — graphene structure explaining the principle of plasmon generation. The application of interlayer voltage V results in the enrichment of one layer by electrons (blue), and the emergence of free states (called holes) in the opposite layer (red). An electron can tunnel from an occupied state to an empty state (dashed line), and its excess energy can be spent to excite a plasmon (red wavy line).

Apparently, the gain medium is not a perpetuum mobile, and the particles created by it — either photons or plasmons–must get their energy from a certain source. In neon-helium lasers, this energy is taken from an electron thrown onto a high atomic orbital by the electric discharge. In semiconductor lasers, the photon takes its energy from collapsing positive and negative charge carriers — electrons and holes, which are supplied by the current source. In the proposed double graphene layer structure, the plasmon takes its energy from an electron hopping from a layer with high potential energy to a layer with low potential energy, as shown in the figure. The creation of a plasmon as a result of this jump is similar to the way in which waves form as a diver enters the water.

To be more precise, the electron transition from one layer to another is more like soaking through the barrier rather than jumping over it. This phenomenon is called tunneling, and typically the probability of tunneling is very low already for nanometer-thin barriers. One exception is the case of resonant tunneling, when each electron from one layer has a “well-prepared” place in the opposite layer.

“The principle of plasmon generation studied by our group is similar to the principle of the quantum cascade laser proposed by the Russian scientists Kazarinov and Suris and realized in the USA (Faist and Capasso) more than twenty years afterwards. In this laser, the photons take energy from electrons tunneling between gallium arsenide layers through the AlGaAs barriers. Our calculations show that in this principal scheme, one can profitably replace gallium arsenide with graphene, while tungsten disulphide can act as a barrier material. This structure is able to generate not only photons, but also their compressed counterparts–plasmons. The generation and amplification of plasmons was previously thought to be a very challenging problem, but the structure we have proposed brings us one step closer to the solution,” says Dmitry Svintsov.

A research team at Worcester Polytechnic Institute (WPI) has developed a revolutionary, light-activated semiconductor nanocomposite material that can be used in a variety of applications, including microscopic actuators and grippers for surgical robots, light-powered micro-mirrors for optical telecommunications systems, and more efficient solar cells and photodetectors.

“This is a new area of science,” said Balaji Panchapakesan, associate professor of mechanical engineering at WPI and lead author of a paper about the new material published in Scientific Reports, an open access journal from the publishers of Nature. “Very few materials are able to convert photons directly into mechanical motion. In this paper, we present the first semiconductor nanocomposite material known to do so. It is a fascinating material that is also distinguished by its high strength and its enhanced optical absorption when placed under mechanical stress.

“Tiny grippers and actuators made with this material could be used on Mars rovers to capture fine dust particles.” Panchapakesan noted. “They could travel through the bloodstream on tiny robots to capture cancer cells or take minute tissue samples. The material could be used to make micro-actuators for rotating mirrors in optical telecommunications systems; they would operate strictly with light, and would require no other power source.”

Like other semiconductor materials, molybdenum disulfide, the material described in the Scientific Reports paper (“Chromatic Mechanical Response in 2-D Layered Transition Metal Dichalcogenide (TMDs)-based Nanocomposites”), is characterized by the way electrons are arranged and move about within its atoms. In particular, electrons in semiconductors are able to move from a group of outer orbitals called the valence band to another group of orbitals known as the conduction band only when adequately excited by an energy source, like an electromagnetic field or the photons in a beam of light. Crossing the “band gap,” the electrons create a flow of electricity, which is the principal that makes computer chips and solar cells possible.

When the negatively-charged electrons move between orbitals, they leave behind positively charged voids known as holes. A pair of a bound electron and an electron hole is called an exciton.

In their experiments, Panchapakesan and his team, which included graduate students Vahid Rahneshin and Farhad Khosravi, as well as colleagues at the University of Louisville and the University of Warsaw Pasteura, observed that the atomic orbitals of the molybdenum and sulfur atoms in molybdenum disulfide are arranged in a unique way that permits excitons within the conduction band to interact with what are known as the p-orbitals of the sulfur atoms. This “exciton resonance” contributes to the strong sigma bonds that give the two dimensional array of atoms in molybdenum sulfide its extraordinary strength. The strength of this resonance is also responsible for a unique effect that can generate heat within the material. It is the heat that gives rise to the material’s chromatic (light-induced) mechanical response.

To take advantage of the later phenomenon, Panchapakesan’s team created thin films made up of just one to three layers of molybdenum disulfide encased in layers of a rubber-like polymer. They exposed these nanocomposites to various wavelengths of light and found that the heat generated as a result of the exciton resonance caused the polymer to expand and contract, depending on the wavelength of the light used. In previous work, Panchapakesan’s team harnessed this photo-mechanical response by fabricating tiny grippers that open and close in response to light pulses. The grippers can capture plastic beads the size of a single human cell.

In further testing, Panchapakesan and his team discovered another unique behavior of the molybdenum disulfide composite that opens the door to a different set of applications. Employing what is known as strain engineering, they stretched the material and discovered that mechanical stresses increased its ability to absorb light.

“This is something that cannot be done with conventional thin-film semiconductors,” Panchapakesan said, “because when you stretch them, they will prematurely break. But with its unique material strength, molybdenum disulfide can be stretched. And its increased optical absorption under strain makes it a good candidate for more efficient solar cells, photodetectors, and detectors for thermal and infrared cameras.

“The exciton resonance, photomechanical response, and increased optical absorption under strain make this an extraordinary material and an intriguing subject for further investigation,” he added.

Semiconductor Manufacturing International Corporation (“SMIC”; NYSE:  SMI; SEHK: 981), the largest and most advanced foundry in Mainland China, today held the groundbreaking ceremony of a new 12-inch wafer fab in Shanghai to meet SMIC Shanghai’s increasing production and development needs.

China’s Ministry of Industry and Information Technology (MIIT) and the Shanghai Government have placed a high value on and provided strong support for the new project. Guests and leaders from the IC industry and investment funds attended the ceremony. The Chairman of SMIC, Dr. Zixue Zhou, and the CEO and Executive Director of SMIC, Dr. Tzu-Yin Chiu, together laid the foundation stone for the new project.

SMIC has 8-inch and 12-inch wafer fabs in BeijingShanghaiShenzhenTianjin and Italy, and the company’s revenue has continued to hit record highs recently. SMIC booked record revenue of US $1.3245 billion in the first half of 2016 (a year-on-year increase of 25.4%). SMIC has achieved 17 consecutive quarters of profit and is close to full production capacity. Revenue is expected to maintain rapid growth of 20% annually over the next three to four years. SMIC will manage production capacity and arrange facility expansions based on customer and market demand.

The Chairman of SMIC, Dr. Zixue Zhou, said: “The start of our new 12-inch wafer fab in SMIC Shanghai will not only help to meet our growing customer demand for advanced production, but also further strengthen and expand SMIC itself.”

SEMI recently completed its annual silicon shipment forecast for the semiconductor industry. This forecast provides an outlook for the demand in silicon units for the period 2016–2018. The SEMI forecast shows polished and epitaxial silicon shipments totaling 10,444 million square inches in 2016; 10,642 million square inches in 2017; and 10,897 million square inches in 2018 (refer to table below). Total wafer shipments this year are expected to exceed the market high set in 2015 and are forecast to continue shipping at record levels in 2017 and 2018.

“Silicon shipment volumes have been gaining strength in recent months, after a soft start at the beginning of the year,” said Denny McGuirk, president and CEO of SEMI. “This positive momentum is expected to continue and result in modest annual growth for the segment this year, 2017 and into 2018.”

2016 Silicon Shipment Forecast

Total Electronic Grade Silicon Slices* – Does not Include Non-Polished Wafers

(Millions of Square Inches, MSI)

Actual

Forecast

2014

2015

2016

2017

2018

MSI

9,826

10,269

10,444

10,642

10,897

Annual Growth

11%

5%

2%

2%

2%

Source: SEMI, October 2016

* Shipments are for semiconductor applications only and do not include solar applications

Silicon wafers are the fundamental building material for semiconductors, which in turn, are vital components of virtually all electronics goods, including computers, telecommunications products, and consumer electronics. The highly engineered thin round disks are produced in various diameters (from one inch to 12 inches) and serve as the substrate material on which most semiconductor devices or “chips” are fabricated.

All data cited in this release is inclusive of polished silicon wafers, including virgin test wafers and epitaxial silicon wafers shipped by the wafer manufacturers to the end-users. Data do not include non-polished or reclaimed wafers.

SEMI today announced the retirement of Dennis (Denny) McGuirk, SEMI’s president and CEO. McGuirk has served on the board of directors and has led SEMI, the global industry association representing more than 2,000 companies in the electronics manufacturing supply chain, since November 2011. McGuirk will continue to lead SEMI in his current capacity until a successor is appointed.

While at SEMI, McGuirk has had responsibility for driving member satisfaction through SEMI’s global operations – anchored by eight international SEMICON expositions – and SEMI products and services including: Standards, market intelligence, business and technical programs, and industry advocacy. Over the past five years, the electronics manufacturing supply chain has undergone major changes as digital mobility, industry consolidation, and regional investment shifts have reshaped the industry. During this period, McGuirk provided stewardship and new direction to SEMI’s operations, expositions, communities, and partnerships.

“Upon joining, Denny realigned SEMI’s operations to be financially sustainable,” said Y.H. Lee, chairman of SEMI’s board of directors. “Denny has been a consistent and hospitable SEMI ambassador at our SEMICON tradeshows around the globe. We thank Denny for his service and many contributions and wish him well in his retirement.”

“After five years at SEMI, the time is right for me to retire. I am grateful to have worked with SEMI’s exceptional members and outstanding employees – the semiconductor industry is one of the most innovative and fast-paced industries in the world, where only the truly excellent thrive. It’s been great to lead a truly global association such as SEMI with achievements at both regional and international levels. I’m committed to ensure a smooth transition to my successor for the continued success of SEMI.”

A leading executive search firm has been engaged to assist in identifying and evaluating candidates, who can assume the responsibility to continue to focus on the growth and prosperity of SEMI members and drive SEMI’s 2020 vision.

Silvaco, Inc., a provider of electronic design automation software and semiconductor IP, today announced that Dr. Raul Camposano has joined Silvaco’s Technical Advisory Board (TAB).  Dr. Camposano brings an accomplished record in industry and academia to the TAB, where he will contribute his expertise in semiconductor design to Silvaco’s leadership team to advance the company’s technology roadmap.

Dr. Camposano is currently CEO of Sage-DA, and held positions of CTO, Senior Vice President, and General Manager at Synopsys for more than ten years.  He also previously served as CEO of EDA startups Xoomsys and Nimbic, which was acquired by Mentor Graphics in 2014.  Prior to joining Synopsys, Dr. Camposano was concurrently a professor of Computer Science at the University of Paderborn, and Institute Director for Design of Integrated Circuits at GMD.  His early career was as a research staff member at IBM’s T.J. Watson Research Center. A distinguished author and researcher, he has published over 70 technical papers and three books, and was an Advisory Professor at Fudan University and the Chinese Academy of Sciences. He was elected Fellow of the IEEE in 1999. Dr. Camposano holds a B.S. and M.S. in EE from the University of Chile, and a Ph.D. in CS from the University of Karlsruhe.

Operating under the leadership of Silvaco’s CEO David L. Dutton, the TAB is a collaborative team of industry and academic experts leveraging their industry knowledge and subject matter expertise to assist the Silvaco management and technology team to refine its technology vision and roadmap. Dr. Camposano joins Dr. Siegfried Selberherr and Dr. Jin Jang as outside experts on the TAB.

“It is an exciting time to join Silvaco’s TAB, as the company has been growing its technology portfolio to take on the significant technology challenges facing the semiconductor design community,” said Dr. Camposano.  “I look forward to helping develop the technology vision necessary to meet those challenges.”

“We are privileged to be able to announce the addition of Dr. Camposano to our technology advisory board,” said David L. Dutton, CEO of Silvaco.  “His deep expertise and experience in both the technology and business of semiconductor design will be of tremendous assistance as we further develop our growth strategies.”