Category Archives: LEDs

High-power white LEDs face the same problem that Michigan Stadium faces on game day — too many people in too small of a space. Of course, there are no people inside of an LED. But there are many electrons that need to avoid each other and minimize their collisions to keep the LED efficiency high. Using predictive atomistic calculations and high-performance supercomputers at the NERSC computing facility, researchers Logan Williams and Emmanouil Kioupakis at the University of Michigan found that incorporating the element boron into the widely used InGaN (indium-gallium nitride) material can keep electrons from becoming too crowded in LEDs, making the material more efficient at producing light.

This is the crystal structure of a BInGaN alloy. Using atomistic calculations and high-performance supercomputers at the NERSC facility, Logan Williams and Emmanouil Kioupakis at the University of Michigan predicted that incorporating boron into the InGaN active region of nitride LEDs reduces or even eliminates the lattice mismatch with the underlying GaN layers while keeping the emission wavelength approximately the same. The lattice matching enables the growth of thicker active regions and increases the efficiency of LEDs at high power. Credit: Michael Waters and Logan Williams

This is the crystal structure of a BInGaN alloy. Using atomistic calculations and high-performance supercomputers at the NERSC facility, Logan Williams and Emmanouil Kioupakis at the University of Michigan predicted that incorporating boron into the InGaN active region of nitride LEDs reduces or even eliminates the lattice mismatch with the underlying GaN layers while keeping the emission wavelength approximately the same. The lattice matching enables the growth of thicker active regions and increases the efficiency of LEDs at high power. Credit: Michael Waters and Logan Williams

Modern LEDs are made of layers of different semiconductor materials grown on top of one another. The simplest LED has three such layers. One layer is made with extra electrons put into the material. Another layer is made with too few electrons, the empty spaces where electrons would be are called holes. Then there is a thin middle layer sandwiched between the other two that determines what wavelength of light is emitted by the LED. When an electrical current is applied, the electrons and holes move into the middle layer where they can combine together to produce light. But if we squeeze too many electrons in the middle layer to increase the amount of light coming out of the LED, then the electrons may collide with each other rather than combine with holes to produce light. These collisions convert the electron energy to heat in a process called Auger recombination and lower the efficiency of the LED.

A way around this problem is to make more room in the middle layer for electrons (and holes) to move around. A thicker layer spreads out the electrons over a wider space, making it easier for them to avoid each other and reduce the energy lost to their collisions. But making this middle LED layer thicker isn’t as simple as it sounds.

Because LED semiconductor materials are crystals, the atoms that make them up must be arranged in specific regular distances apart from each other. That regular spacing of atoms in crystals is called the lattice parameter. When crystalline materials are grown in layers on top of one another, their lattice parameters must be similar so that the regular arrangements of atoms match where the materials are joined. Otherwise the material gets deformed to match the layer underneath it. Small deformations aren’t a problem, but if the top material is grown too thick and the deformation becomes too strong then atoms become misaligned so much that they reduce the LED efficiency. The most popular materials for blue and white LEDs today are InGaN surrounded by layers of GaN. Unfortunately, the lattice parameter of InGaN does not match GaN. This makes growing thicker InGaN layers to reduce electron collisions challenging.

Williams and Kioupakis found that by including boron in this middle InGaN layer, its lattice parameter becomes much more similar to GaN, even becoming exactly the same for some concentrations of boron. In addition, even though an entirely new element is included in the material, the wavelength of light emitted by the BInGaN material is very close to that of InGaN and can be tuned to different colors throughout the visible spectrum. This makes BInGaN suitable to be grown in thicker layers, reducing electron collisions and increasing the efficiency of the visible LEDs.

Although this material is promising to produce more efficient LEDs, it is important that it can be realized in the laboratory. Williams and Kioupakis have also shown that BInGaN could be grown on GaN using the existing growth techniques for InGaN, allowing quick testing and use of this material for LEDs. Still, the primary challenge of applying this work will be to fine tune how best to get boron incorporated into InGaN at sufficiently high amounts. But this research provides an exciting avenue for experimentalists to explore making new LEDs that are powerful, efficient, and affordable at the same time.

Transphorm Inc., a designer and manufacturer of highest reliability (JEDEC and AEC-Q101 qualified) 650V gallium nitride (GaN) semiconductors, announced it received a $15 million investment from Yaskawa Electric Corporation. This news comes only a few weeks after Yaskawa revealed its integrated Σ-7 F servo motor relies on Transphorm’s high-voltage (HV) GaN to deliver unprecedented performance and power density. Transphorm intends to allocate the funds to various areas of its GaN product development.

“We’ve seen the benefits of working with gallium nitride from the R&D phases through to the application development phases of our products, such as photovoltaic converters and the integrated Σ-7 F servo motor,” said Yukio Tsutsui, General Manager of Corporate R&D Center from Yaskawa. “We look ahead to further developments from Transphorm and its cutting-edge technology.”

The integrated Σ-7 F products resulting from the companies’ co-development serves one of the core target markets that can benefit most from HV GaN: servo motors. The technology is also an optimal solution for automotive systems, data center and industrial power supplies, renewable energy and other broad industrial applications.

“Transphorm has consistently prioritized the quality and reliability of our GaN platform,” said Dr. Umesh Mishra, Chairman, CTO and co-founder of Transphorm. “That focus leads to strong customer relationships with visionaries such as Yaskawa and companies that not only innovate, but also influence market growth by demonstrating GaN’s real-world impact. Receiving Yaskawa’s recent support illustrates the rising confidence in GaN while underscoring its reliability.”

InfinityQS International, Inc. (InfinityQS), the global authority on data-driven manufacturing quality, announces TEL NEXX, a metallization solutions provider to chip designers and manufacturers, is using its software to modernize shop floor data collection and quality control. Moving from a manual, paper-based system to an accessible database, the company has installed InfinityQS’ Quality Intelligence solution ProFicient on tablets for shop floor operators to directly enter data. This has improved the accuracy and timeliness of data capture and enabled rapid response to production issues. With access to historical data at the management level, TEL NEXX can also identify opportunities for quality and process improvements.

Brian Hart, Manufacturing Engineer, TEL NEXX, said, “ProFicient has made accessing a history for each product easy. As our database grows, we can extract information to drive continuous improvement projects and eliminate bottlenecks. What’s more, moving from a paper-based system to an accessible database has made us more efficient. As the projects and operators advance, we only expect to move faster and faster—with the same integrity.”

Historically, TEL NEXX collected data almost entirely manually, which required operators to duplicate data-entry steps by recording data on paper and then entering them into spreadsheets. These processes were time consuming and required rechecking to avoid errors. But now, operators are entering data once into ProFicient, and the data immediately becomes available for managers and administrators to review and provide feedback in real time. Direct data entry has also improved morale on the shop floor, with operators seeing the importance of data collection and taking greater ownership of the work.

Michael Lyle, President and CEO, InfinityQS, said, “When manufacturers rely on manual data entry, it creates inefficiencies that prevent them from responding to variations and other shop floor issues properly and in a timely manner. Instead, modern technologies are available that can create visibility for organizations into their quality data. This transparency enables them to not only make prompt corrections to ensure problems don’t compound, but also perform proactive analysis for continuous improvement.”

To support operator adoption, Hart is leading an incremental rollout of ProFicient and also gradually integrating the solution with TEL NEXX’s existing shop-floor systems. Notably, within just weeks of deploying ProFicient, Hart was able to detect equipment settings that had been inadvertently altered from the original specifications and in a few hours make adjustments so that the machine operated correctly moving forward.

The stacked color sensor


November 16, 2017

The human eye has three different types of sensory cells for the perception of colour: cells that are respectively sensitive to red, green and blue alternate in the eye and combine their information to create an overall colored image. Image sensors, for example in mobile phone cameras, work in a similar way: blue, green and red sensors alternate in a mosaic-like pattern. Intelligent software algorithms calculate a high-resolution colour image from the individual colour pixels.

However, the principle also has some inherent limitations: as each individual pixel can only absorb a small part of the light spectrum that hits it, a large part of the light is lost. In addition, the sensors have basically reached the limits of miniaturization, and unwanted image disturbances can occur; these are known as color moiré effects and have to be laboriously removed from the finished image.

Transparent only for certain colors

Researchers have therefore been working for a number of years on the idea of stacking the three sensors instead of placing them next to each other. Of course, this requires that the sensors on top let through the light frequencies that they do not absorb to the sensors underneath. At the end of the 1990s, this type of sensor was successfully produced for the first time. It consisted of three stacked silicon layers, each of which absorbed only one colour.

This actually resulted in a commercially available image sensor. However, this was not successful on the market because the absorption spectra of the different layers were not distinct enough, so part of the green and red light was absorbed by the blue-sensitive layer. The colors therefore blurred and the light sensitivity was thus lower than for ordinary light sensors. In addition, the production of the absorbing silicon layers required a complex and expensive manufacturing process.

Empa researchers have now succeeded in developing a sensor prototype that circumvents these problems. It consists of three different types of perovskites – a semiconducting material that has become increasingly important during the last few years, for example in the development of new solar cells, due to its outstanding electrical properties and good optical absorption capacity. Depending on the composition of these perovskites, they can, for example, absorb part of the light spectrum, but remain transparent for the rest of the spectrum. The researchers in Maksym Kovalenko’s group at Empa and ETH Zurich used this principle to create a color sensor with a size of just one pixel. The researchers were able to reproduce both simple one-dimensional and more realistic two-dimensional images with an extremely high color fidelity.

Accurate recognition of colors

The advantages of this new approach are clear: the absorption spectra are clearly differentiated and the colour recognition is thus much more precise than with silicon. In addition, the absorption coefficients, especially for the light components with higher wavelengths (green and red), are considerably higher in the perovskites than in silicon. As a result, the layers can be made significantly smaller, which in turn allows smaller pixel sizes. This is not crucial in the case of ordinary camera sensors; however, for other analysis technologies, such as spectroscopy, this could permit significantly higher spatial resolution. The perovskites can also be produced using a comparatively cheap process.

However, more work is still needed in order to further develop this prototype into a commercially usable image sensor. Key areas include the miniaturisation of pixels and the development of methods for producing an entire matrix of such pixels in one step. According to Kovalenko, this should be possible with existing technologies.

Perovskites are such a promising material in research that the prestigious journal Science has published a special edition about them. It includes a review article by the Empa/ETH research group led by Maksym Kovalenko about the current state of research and potential uses of lead halide perovskites nanocrystals.

These have properties that make them a promising candidate for the development of semiconductor nanocrystals for various optoelectronic applications such as television screens, LEDs and solar cells: they are inexpensive to manufacture, have a high tolerance to defects and can be tuned precisely to emit light in a specific colour spectrum.

Seoul Semiconductor has developed an ultra-compact LED driver series with a power density 5X higher than conventional LED drivers. Based on Seoul Semiconductor’s patented Acrich technology, the MicroDriver Series delivers more than 24W of output power with a power density of 20W/cubic inch cubic inch, compared to existing drivers at 3-5W/cubic inch. Measuring just 1.5″ x 1.1″ x 0.8″ (38mm x 28mm x 20.5mm), the MicroDriver is 80% smaller than conventional LED drivers, giving lighting designers the ability to develop ultra-thin and novel luminaires with flicker-free operation.

“The new MicroDriver Series LED drivers will have a significant impact on external converters, enabling lighting design engineers to dramatically reduce the size, weight and volume of their luminaires,” explained Keith Hopwood, executive vice-president at Seoul Semiconductor. “This breakthrough in size reduction for the MicroDriver Series is the result of the company’s continuing investment in Acrich high voltage LED technology, delivering benefits for customers in smaller size, increased efficiency and lower costs.”

The MicroDriver Series LED drivers are ideal for lighting designs such as wall sconces, vanity lights, downlights, and flush-mounted lighting fixture applications. The MicroDriver Series’ smaller size facilitates the conversion of these applications to LED light sources, which was not previously possible due to bulky conventional LED drivers, making halogen lamp replacement possible without the need for a large volume recess for the driver, or a reduction in light output.

The MicroDriver Series LED drivers are ideal for luminaire designs up to 2,400 lumens, and their compact size enables integration of the lighting control circuitry with the external converter. This gives lighting designers the capability to mount more light sources on the board or reduce the total size of the fixture and mounting plate.

The resulting decrease in the LED drivers’ physical size has significant business implications for the lighting industry, giving lighting designers the ability to shrink the size of light fixtures by as much as 20%, which reduces shipping and storage costs. Because conventional LED drivers are both heavy and bulky, they are typically shipped via sea freight from manufacturers in Asia to European and North American fixture companies, with transit times up to six weeks. The MicroDriver Series LED drivers are small and lightweight enough to make airfreight practical and economical, reducing lead time and streamlining the overall supply chain.

The MicroDriver Series is rated to IP66, and is available in 10 models, rated for 8 – 24W in 120V or 230V versions, for LED assemblies from 900-2400 lumens. The drivers are CE recognized, provide flicker-free operation for phase-cut dimmers, and are compliant to California Title 24, enabling lighting designers to meet the most challenging design requirements, including low flicker, high power factor, Class B EMI and 2.5kV surge.

Seoul Semiconductor exhibited its new SunLike Series LEDs, the world’s first LED to produce light that closely matches the spectrum of natural sunlight, at the recent Professional Lighting Design Conference (PLDC), held in Paris, France from Nov. 1 – 4. The new LED technology, first unveiled in Frankfurt, Germany in June of this year, is generating interest from many global lighting companies, who are developing new lighting products using SunLike Series LEDs.

New products from leading lighting designers powered by Seoul Semiconductor’s SunLike LED technology were on display at PLDC 2017, which attracted more than 2000 attendees. A number of these companies signaled their intention to launch these new SunLike-powered lighting products in the market.

The director of Seoul Semiconductor’s Lighting Divison, Mr. Yo Cho, was invited as a keynote speaker at the PLDC’s opening event, where he presented SunLike Series LED technology. “Because the SunLike Series LEDs are designed to deliver light that closely matches sunlight’s natural spectrum, they provide an optimized light source that maximizes the benefits of natural light,” said Mr. Cho. “Thus, the colors and texture of objects can be viewed more accurately, as they would be seen under natural sunlight.”

According to Dr. Kibum Nam, head of Seoul Semiconductor R&D Center and Chief Technology Officer, “SunLike Series LEDs have the potential to drive a revolution in lighting – overcoming the limits of artificial light sources by implementing light closer to the natural spectrum of sunlight. Seoul will open a new era of natural spectrum lighting with the launch of more SunLike LED technology.”

SunLike Series natural spectrum LEDs may also play a key role in minimizing the negative effects of artificial lighting. While conventional LED technology produces light with a pronounced blue “spike” in its spectral output, SunLike LEDs implement a more uniform spectrum that more closely matches natural sunlight, lowering this blue light spike. Some recent research indicates that this blue light spike may produce negative effects when viewed for prolonged periods of time during night-time hours, potentially interfering with natural human biorhythms. By employing new light sources powered by SunLike Series LEDs, lighting designers will be able to deliver a healthier light experience.

Interest in the link between light sources and human health is higher than ever before, as evidenced by the winners of this year’s Nobel Prize in Physiology, Professor Jeffrey C. Hall, University of Maine; Professor Michael Morris Rosbach, Brandeis University; and Professor Michael Young, Rockefeller University. These researchers are credited with seminal discoveries about the cellular mechanisms for circadian biology.

The trick is to be able to use beryllium atoms in gallium nitride. Gallium nitride is a compound widely used in semiconductors in consumer electronics from LED lights to game consoles. To be useful in devices that need to process considerably more energy than in your everyday home entertainment, though, gallium nitride needs to be manipulated in new ways on the atomic level.

“There is growing demand for semiconducting gallium nitride in the power electronics industry. To make electronic devices that can process the amounts of power required in, say, electric cars, we need structures based on large-area semi-insulating semiconductors with properties that allow minimising power loss and can dissipate heat efficiently. To achieve this, adding beryllium into gallium nitride – or ‘doping’ it – shows great promise,” explains Professor Filip Tuomisto from Aalto University.

Sample chamber of the positron accelerator. Credit: Hanna Koikkalainen

Sample chamber of the positron accelerator. Credit: Hanna Koikkalainen

Experiments with beryllium doping were conducted in the late 1990s in the hope that beryllium would prove more efficient as a doping agent than the prevailing magnesium used in LED lights. The work proved unsuccessful, however, and research on beryllium was largely discarded.

Working with scientists in Texas and Warsaw, researchers at Aalto University have now managed to show – thanks to advances in computer modelling and experimental techniques – that beryllium can actually perform useful functions in gallium nitride. The article published in Physical Review Letters shows that depending on whether the material is heated or cooled, beryllium atoms will switch positions, changing their nature of either donating or accepting electrons. “Our results provide valuable knowledge for experimental scientists about the fundamentals of how beryllium changes its behaviour during the manufacturing process. During it – while being subjected to high temperatures – the doped compound functions very differently than the end result,” describes Tuomisto.

If the beryllium-doped gallium nitride structures and their electronic properties can be fully controlled, power electronics could move to a whole new realm of energy efficiency.

“The magnitude of the change in energy efficiency could as be similar as when we moved to LED lights from traditional incandescent light bulbs. It could be possible to cut down the global power consumption by up to ten per cent by cutting the energy losses in power distribution systems,” says Tuomisto.

Researchers have developed a technique that allows users to collect 100 times more spectrographic information per day from microfluidic devices, as compared to the previous industry standard. The novel technology has already led to a new discovery: the speed of mixing ingredients for quantum dots used in LEDs changes the color of light they emit – even when all other variables are identical.

Researchers have discovered that the speed of mixing ingredients for quantum dots used in LEDs changes the color of light they emit -- even when all other variables are identical. Credit: Milad Abolhasani

Researchers have discovered that the speed of mixing ingredients for quantum dots used in LEDs changes the color of light they emit — even when all other variables are identical. Credit: Milad Abolhasani

“Semiconductor nanocrystals are important structures used in a variety of applications, ranging from LED displays to solar cells. But producing nanocrystalline structures using chemical synthesis is tricky, because what works well on a small scale can’t be directly scaled up – the physics don’t work,” says Milad Abolhasani, an assistant professor of chemical and biomolecular engineering at North Carolina State University and corresponding author of a paper on the work.

“This challenge has led to an interest in continuous nanomanufacturing approaches that rely on precisely controlled microfluidic-based synthesis,” Abolhasani says. “But testing all of the relevant variables to find the best combination for manufacturing a given structure takes an extremely long time due to the limitations of the existing monitoring technologies – so we decided to build a completely new platform.”

Currently, microfluidic monitoring technologies are fixed in place, and monitor either absorption or fluorescence. Fluorescence data tells you what the crystal’s emission bandgap is – or what color of light it emits – which is important for LED applications. Absorption data tells you the crystal’s size and concentration, which is relevant for all applications, as well as its absorption bandgap – which is important for solar cell applications.

To monitor both fluorescence and absorption you’d need two separate monitoring points. And, being fixed in place, people would speed up or slow down the flow rate in the microfluidic channel to control the reaction time of the chemical synthesis: the faster the flow rate, the less reaction time a sample has before it hits the monitoring point. Working around the clock, this approach would allow a lab to collect about 300 data samples in 24 hours.

Abolhasani and his team developed an automated microfluidic technology called NanoRobo, in which a spectrographic monitoring module that collects both fluorescent and absorption data can move along the microfluidic channel, collecting data along the way. The system is capable of collecting 30,000 data samples in 24 hours – expediting the discovery, screening, and optimization of colloidal semiconductor nanocrystals, such as perovskite quantum dots, by two orders of magnitude. Video of the automated system can be seen at https://www.youtube.com/watch?v=FBQoSDdn_Uk.

And, because of the translational capability of the novel monitoring module, the system can study reaction time by moving along the microfluidic channel, rather than changing the flow rate – which, the researchers discovered, makes a big difference.

Because NanoRobo allowed researchers to monitor reaction time and flow rate as separate variables for the first time, Abolhasani was the first to note that the velocity of the samples in the microfluidic channel affected the size and emission color of the resulting nanocrystals. Even if all the ingredients were the same, and all of the other conditions were identical, samples that moved – and mixed – at a faster rate produced smaller nanocrystals. And that affects the color of light those crystals emit.

“This is just one more way to tune the emission wavelength of perovskite nanocrystals for use in LED devices,” Abolhasani says.

NC State has filed a provisional patent covering NanoRobo and is open to exploring potential market applications for the technology.

Enabling the A.I. era


November 8, 2017

BY PETE SINGER, Editor-in-Chief

There’s a strongly held belief now that the way in which semiconductors will be designed and manufactured in the future will be largely determined by a variety of rapidly growing applications, including artificial intelligence/deep learning, virtual and augmented reality, 5G, automotive, the IoT and many other uses, such as bioelectronics and drones.

The key question for most semiconductor manufacturers is how can they benefit from these trends? One of the goals of a recent panel assembled by Applied Materials for an investor day in New York was to answer that question.

The panel, focused on “enabling the A.I. era,” was moderated by Sundeep Bajikar (former Sellside Analyst, ASIC Design Engineer). The panelists were: Christos Georgiopoulos (former Intel VP, professor), Matt Johnson (SVP in Automotive at NXP), Jay Kerley (CIO of Applied Materials), Mukesh Khare (VP of IBM Research) and Praful Krishna (CEO of Coseer). The panel discussion included three debates: the first one was “Data: Use or Discard”; the second was “Cloud versus Edge”; and the third was “Logic versus Memory.”

“There’s a consensus view that there will be an explosion of data generation across multiple new categories of devices,” said Bajikar, noting that the most important one is the self-driving car. NXP’s Johnson responded that “when it comes to data generation, automotive is seeing amazing growth.” He noted the megatrends in this space: the autonomy, connectivity, the driver experience, and electrification of the vehicle. “These are changing automotive in huge ways. But if you look underneath that, AI is tied to all of these,” he said.

He said that estimates of data generation by the hour are somewhere from 25 gigabytes per hour on the low end, up to 250 gigabytes or more per hour on the high end. or even more in some estimates.

“It’s going to be, by the second, the largest data generator that we’ve seen ever, and it’s really going to have a huge impact on all of us.”

Intel’s Georgiopoulos agrees that there’s an enormous amount of infrastructure that’s getting built right now. “That infrastructure is consisting of both the ability to generate the data, but also the ability to process the data both on the edge as well as on the cloud,” he said. The good news is that sorting that data may be getting a little easier. “One of the more important things over the last four or five years has been the quality of the data that’s getting generated, which diminishes the need for extreme algorithmic development,” he said. “The better data we get, the more reasonable the AI neural networks can be and the simpler the AI networks can be for us to extract information that we need and turn the data information into dollars.” Check out our website at www.solid-state.com for a full report on the panel.

Pixelligent Technologies, the inventor of PixClear high-index nanocomposites for the OLED display, HD display, and solid state lighting markets, announced today it has named Alain Harrus, Ph.D. and Gene Banucci, Ph.D. to the Pixelligent Board of Directors.

“Alain and Gene are joining the Pixelligent team at a critical time in our development as we are emerging from years of product development and application engineering, to widespread adoption of our nanocomposites across all of our target markets. The combined vast experience which Alain Harrus brings on the OLED and semiconductor equipment front, and that Gene Banucci brings from having built one of the most successful advanced materials companies, is an incredibly valuable addition to the Pixelligent team and we are honored to have them,” commented Craig Bandes, CEO of Pixelligent Technologies.

Alain Harrus is currently the CEO of Kateeva, a manufacturer of a deposition equipment platform utilizing ink jet printing, with its initial focus on mass production of OLED displays. Kateeva’s innovations are helping to accelerate the adoption of OLED and other advanced display technologies. Prior to Kateeva, Alain was a Partner at Crosslink Capital, a San Francisco-based venture capital company where he led the firm’s semiconductor and energy technology investment activities. Before Crosslink he was the CTO at Novellus Systems—now part of Lam Research. “I’m excited to be joining the Pixelligent Board as the Company is entering its inflection point and emerging as a leading provider of high-efficiency materials to the OLED and HD display markets,” said Alain Harrus. Pixelligent and Kateeva have been partnering to optimize advanced display process solutions for the OLED for the past 12 months.

Gene Banucci is the former founding CEO of ATMI.  Gene served as CEO of ATMI from 1986-2004 and remained on the Board until the company was sold for $1.1B in 2014. Under his leadership the company completed an IPO and he grew the company to $245 million in revenues when he retired.  Since retiring as CEO, he has served on over 10 Boards across numerous industries.  “I have known and worked with executives at Pixelligent and have been following the Company’s progress for the last few years.  I am impressed with the balanced approach that Pixelligent has executed on both the market-leading materials they have developed as well as their proprietary mass production manufacturing platform.  I look forward to working with the team to help firmly establish Pixelligent as a leading advanced materials supplier to the OLED and Solid State Lighting markets,” said Gene Banucci.

“These are exciting times for Pixelligent and we expect 2018 to be a record year in terms of revenues and commercial wins across all of our core OLED display, OLED lighting, HD Display, and LED lighting markets,” said Bandes.