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Slideshow: IEDM 2014 Preview


November 26, 2014

This year, the IEEE International Electron Devices Meeting (IEDM) celebrates 60 years of reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling. The conference scope not only encompasses devices in silicon, compound and organic semiconductors, but also in emerging material systems. In 2014 there is an increased emphasis on circuit and process technology interaction, energy harvesting, bio-snesors and bioMEMS, power devices, magnetics and spintronics, two dimensional electronics and devices for non-Boolean computing.

Solid State Technology will be reporting insights from bloggers and industry partners during the conference, and this slideshow provides an advance look at some of the most newsworthy topics and papers to be presented at the annual meeting, to be held at the Hilton San Francisco Union Square Hotel from December 15-17, 2014.

Click here to launch slideshow

Bay Bridge, San Francisco at dusk

 

Related news and blogs: 

Intel and IBM to lay out 14nm FinFET strategies on competing substrates at IEDM 2014

Slideshow: IEDM 2013 Highlights

Physicists at the University of Kansas have fabricated an innovative substance from two different atomic sheets that interlock much like Lego toy bricks. The researchers said the new material — made of a layer of graphene and a layer of tungsten disulfide — could be used in solar cells and flexible electronics. Their findings are published today by Nature Communications.

Hsin-Ying Chiu, assistant professor of physics and astronomy, and graduate student Matt Bellus fabricated the new material using “layer-by-layer assembly” as a versatile bottom-up nanofabrication technique. Then, Jiaqi He, a visiting student from China, and Nardeep Kumar, a graduate student who now has moved to Intel Corp., investigated how electrons move between the two layers through ultrafast laser spectroscopy in KU’s Ultrafast Laser Lab, supervised by Hui Zhao, associate professor of physics and astronomy.

 “To build artificial materials with synergistic functionality has been a long journey of discovery,” Chiu said. “A new class of materials, made of the layered materials, has attracted extensive attention ever since the rapid development of graphene technology. One of the most promising aspects of this research is the potential to devise next-generation materials via atomic layer-level control over its electronic structure.”

According to the researchers, the approach is to design synergistic materials by combining two single-atom thick sheets, for example, acting as a photovoltaic cell as well as a light-emitting diode, converting energy between electricity and radiation. However, combining layers of atomically thin material is a thorny task that has flummoxed researchers for years.

“A big challenge of this approach is that, most materials don’t connect together because of their different atomic arrangements at the interface — the arrangement of the atoms cannot follow the two different sets of rules at the same time,” Chiu said. “This is like playing with Legos of different sizes made by different manufacturers. As a consequence, new materials can only be made from materials with very similar atomic arrangements, which often have similar properties, too. Even then, arrangement of atoms at the interface is irregular, which often results in poor qualities.”

Layered materials such as those developed by the KU researchers provide a solution for this problem. Unlike conventional materials formed by atoms that are strongly bound in all directions, the new material features two layers where each atomic sheet is composed of atoms bound strongly with their neighbors — but the two atomic sheets are themselves only weakly linked to each other by the so-called van der Waals force, the same attractive phenomenon between molecules that allows geckos to stick to walls and ceilings.

“There exist about 100 different types of layered crystals — graphite is a well-known example,” Bellus said. “Because of the weak interlayer connection, one can choose any two types of atomic sheets and put one on top of the other without any problem. It’s like playing Legos with a flat bottom. There is no restriction. This approach can potentially product a large number of new materials with combined novel properties and transform the material science.”

Chiu and Bellus created the new carbon and tungsten disulfide material with the aim of developing novel materials for efficient solar cells. The single sheet of carbon atoms, known as graphene, excels at moving electrons around, while a single-layer of tungsten disulfide atoms is good at absorbing sunlight and converting it to electricity. By combining the two, this innovative material can potentially perform both tasks well.

The team used scotch tape to lift a single layer of tungsten disulfide atoms from a crystal and apply it to a silicon substrate. Next, they used the same procedure to remove a single layer of carbon atoms from a graphite crystal. With a microscope, they precisely laid the graphene on top of the tungsten disulfide layer. To remove any glue between the two atomic layers that are unintentionally introduced during the process, the material was heated at about 500 degrees Fahrenheit for a half-hour. This allowed the force between the two layers to squeeze out the glue, resulting in a sample of two atomically thin layers with a clean interface.

Doctoral students He and Kumar tested the new material in KU’s Ultrafast Laser Lab. The researchers used a laser pulse to excite the tungsten disulfide layer.

“We found that nearly 100 percent of the electrons that absorbed the energy from the laser pulse move from tungsten disulfide to graphene within one picosecond, or one-millionth of one-millionth second,” Zhao said. “This proves that the new material indeed combines the good properties of each component layer.”

The research groups led by Chiu and Zhao are trying to apply this Lego approach to other materials. For example, by combining two materials that absorb light of different colors, they can make materials that react to diverse parts of the solar spectrum.

The National Science Foundation funded this work.

North America-based manufacturers of semiconductor equipment posted $1.10 billion in orders worldwide in October 2014 (three-month average basis) and a book-to-bill ratio of 0.93, according to the October EMDS Book-to-Bill Report published today by SEMI.   A book-to-bill of 0.93 means that $93 worth of orders were received for every $100 of product billed for the month.

The three-month average of worldwide bookings in October 2014 was $1.10 billion. The bookings figure is 7.0 percent lower than the final September 2014 level of $1.19 billion, and is 1.9 percent lower than the October 2013 order level of $1.12 billion.

The three-month average of worldwide billings in October 2014 was $1.18 billion. The billings figure is 5.8 percent lower than the final September 2014 level of $1.26 billion, and is 10.6 percent higher than the October 2013 billings level of $1.07 billion.

“While the global semiconductor equipment industry will see strong double-digit growth this year and is slated for further growth in 2015, order activity posted by North American suppliers has moderated, resulting in a book-to-bill ratio below parity for two consecutive months,” said SEMI president and CEO Denny McGuirk.

The SEMI book-to-bill is a ratio of three-month moving averages of worldwide bookings and billings for North American-based semiconductor equipment manufacturers. Billings and bookings figures are in millions of U.S. dollars.

 

Billings
(3-mo. avg)

Bookings
(3-mo. avg)

Book-to-Bill

May 2014

$1,407.8

$1,407.0

1.00

June 2014

$1,327.5

$1,455.0

1.10

July 2014

$1,319.1

$1,417.1

1.07

August 2014

$1,293.4

$1,346.1

1.04

September 2014 (final)

$1,256.5

$1,186.2

0.94

October 2014 (prelim)

$1,184.0

$1,102.9

0.93

Source: SEMI, November 2014 

ON Semiconductor Corporation today announced that Paul A. Mascarenas has joined its Board of Directors. The Board also appointed Mr. Mascarenas to its Science and Technology Committee.

“Paul Mascarenas is an outstanding addition to our Board of Directors,” said Dan McCranie, chairman of ON Semiconductor’s Board of Directors. “Paul brings significant technical strategy, planning and R&D experience in the automotive industry from his leadership and strategic planning roles at Ford Motor Co. Automotive electronics remains a primary focus for ON Semiconductor, currently accounting for approximately 30 percent of annual revenues. Mascarenas will be valuable addition to the Board as we continue to grow our automotive business and align the company toward our vision of becoming the premier supplier of energy efficient system solutions worldwide.”

Paul A. Mascarenas served as the Chief Technical Officer and Vice President of Research and Advanced Engineering at Ford Motor Co. from Jan. 1, 2011 to Sept. 30, 2014, where he oversaw Ford’s worldwide research organization as well as the development and implementation of the company’s technology strategy and plans. From 2007 to 2010, Mr. Mascarenas served as Ford’s Vice President of Engineering, and from 2005 to 2007 he served as Vice President of North American Vehicle Programs. During his tenure with Ford, which began in 1982, Mr. Mascarenas held various development and engineering positions both in the U.S. and Europe. Mr. Mascarenas holds a mechanical engineering degree from the University of London, King’s College in England as well as an honorary doctorate degree from Chongqing University in China. He currently serves as the President of FISITA – The International Federation of Automotive Engineering Societies.

ON Semiconductor offers a portfolio of energy efficient power and signal management, logic, discrete and custom solutions to help design engineers solve their unique design challenges in automotive, communications, computing, consumer, industrial, LED lighting, medical, military/aerospace and power supply applications.

Continuing strength in China and a resurgent U.S. economy are combining to drive accelerated growth in the worldwide market for semiconductors used in industrial applications this year, according to IHS Technology.

Global market revenue for industrial semiconductors is expected to rise by 12.9 percent in 2014, reaching $38.5 billion, up from $34.0 billion in 2013. This represents an even larger increase in market growth compared to an 11.4 percent expansion in 2013.

The United States and China, the world’s two largest markets for industrial semiconductors, are propelling global growth this year, with revenue increases of 13 percent and 17 percent, respectively, as presented in the figure below. The two regions were responsible for strong market increases in the second quarter, compensating for a decline in Europe.

The surge in in the second quarter was thanks in particular to three sectors: factory automation; building and home control; and commercial aircraft. Expansion in the economies of the US and China overcame a contraction in the European market region during the April through June period. Following a seasonally slow first quarter, the strong second quarter expansion of nearly 7 percent kept the global market for industrial semiconductors on a strong ascendant path for the year.

Rising demand for industrial semiconductors in the United States is being driven by a wide range of positive economic factors that are boosting the manufacturing sector,” said Robbie Galoso, principal analyst for IHS.

“At the same time, the Chinese government’s generous stimulus programs in several product markets are promoting broad-based strength for various industrial electronics areas. The robust performance in both countries kept spending on industrial semiconductors on track in the second quarter and set the stage for accelerated growth for the entire year of 2014.”

For more information, see the report entitled “Robust Q2 supports 2014 double-digit growth forecast” from the IHS Semiconductors & Components service.

Industrial juggernauts

The growth in the U.S. is driven by a plethora of factors, including a more stable housing market, improved consumer finances, and credit and increased capital spending. This will cause annual growth in the U.S. industrial semiconductor market to rise by about 2 percentage points in 2014 compared to 2013.

With 30.5 percent of total revenue in 2013, the United States is the No. 1 purchaser of industrial semiconductors in the world and has market share dominance across several industrial markets.

Meanwhile for China, that country’s economic growth is cooling somewhat, with the impact of government stimulus programs reverberating through the country’s various market segments. This is resulting in strong spending on microchips in industrial areas including manufacturing and process automation, test and measurement, building and home control, and security and video surveillance.

China is the second largest purchaser of industrial semiconductors in the world with 14.1 percent of total revenues in 2013.

LEDs light up the industrial chip sector

Among the fastest growing product sectors within the industrial semiconductor market will be optical light-emitting diodes (LEDs), which will attain 12.4 percent growth. The use of LEDs for general-lighting applications is propelling expansion of this area. Demand for general-lighting LEDs is so strong that as lighting outperformed other applications like televisions, some LEDs originally intended for TVs are being sold to the general-lighting market.

Other fast-growing segments include transistors and thyristors, which will grow 14.2 percent this year.

Silicon is the second most-abundant element in the earth’s crust. When purified, it takes on a diamond structure, which is essential to modern electronic devices–carbon is to biology as silicon is to technology. A team of Carnegie scientists led by Timothy Strobel has synthesized an entirely new form of silicon, one that promises even greater future applications. Their work is published in Nature Materials.

Although silicon is incredibly common in today’s technology, its so-called indirect band gap semiconducting properties prevent it from being considered for next-generation, high-efficiency applications such as light-emitting diodes, higher-performance transistors and certain photovoltaic devices.

Metallic substances conduct electrical current easily, whereas insulating (non-metallic) materials conduct no current at all. Semiconducting materials exhibit mid-range electrical conductivity. When semiconducting materials are subjected to an input of a specific energy, bound electrons can move to higher-energy, conducting states. The specific energy required to make this jump to the conducting state is defined as the “band gap.” While direct band gap materials can effectively absorb and emit light, indirect band gap materials, like diamond-structured silicon, cannot.

In order for silicon to be more attractive for use in new technology, its indirect band gap needed to be altered. Strobel and his team–Carnegie’s Duck Young Kim, Stevce Stefanoski and Oleksandr Kurakevych (now at Sorbonne) –were able to synthesize a new form of silicon with a quasi-direct band gap that falls within the desired range for solar absorption, something that has never before been achieved.

The silicon they created is a so-called allotrope, which means a different physical form of the same element, in the same way that diamonds and graphite are both forms of carbon. Unlike the conventional diamond structure, this new silicon allotrope consists of an interesting open framework, called a zeolite-type structure, which is comprised of channels with five-, six- and eight-membered silicon rings.

They created it using a novel high-pressure precursor process. First, a compound of silicon and sodium, Na4Si24, was formed under high-pressure conditions. Next, this compound was recovered to ambient pressure, and the sodium was completely removed by heating under vacuum. The resulting pure silicon allotrope, Si24, has the ideal band gap for solar energy conversion technology, and can absorb, and potentially emit, light far more effectively than conventional diamond-structured silicon. Si24 is stable at ambient pressure to at least 842 degrees Fahrenheit (450 degrees Celsius).

“High-pressure precursor synthesis represents an entirely new frontier in novel energy materials,” remarked Strobel. “Using the unique tool of high pressure, we can access novel structures with real potential to solve standing materials challenges. Here we demonstrate previously unknown properties for silicon, but our methodology is readily extendible to entirely different classes of materials. These new structures remain stable at atmospheric pressure, so larger-volume scaling strategies may be entirely possible.”

“This is an excellent example of experimental and theoretical collaboration,” said Kim. “Advanced electronic structure theory and experiment have converged to deliver a real material with exciting prospects. We believe that high-pressure research can be used to address current energy challenges, and we are now extending this work to different materials with equally exciting properties.”

This work was supported DARPA and Energy Frontier Research in Extreme Environments (EFree), an Energy Frontier Research Center funded by the U.S. Department of Energy, Office of Science.

The Semiconductor Industry Association (SIA) today announced that the SIA board of directors has elected Brian Krzanich, CEO of Intel, as its 2015 chairman and Dr. Necip Sayiner, president, CEO and director of Intersil, as its 2015 vice chairman.

“We are excited to welcome Brian Krzanich as SIA’s 2015 chairman,” said Brian Toohey, SIA president and CEO. “His exceptional understanding of semiconductor issues and extensive industry experience make him uniquely qualified to help tackle our industry’s challenges and lead us into the future. We appreciate his many achievements and look forward to his leadership in 2015 as SIA chairman.”

Krzanich became the CEO of Intel in May 2013. He has progressed through a series of technical and leadership roles at Intel, most recently serving as the COO since January 2012. As COO, his responsibilities included leading an organization of more than 50,000 employees spanning Intel’s Technology and Manufacturing Group, Intel Custom Foundry, supply chain operations, the NAND Solutions group, human resources, information technology and Intel’s China strategy. Prior to becoming COO, Krzanich held senior leadership positions within Intel’s manufacturing organization. Krzanich began his career at Intel in 1982 in New Mexico as a process engineer.

“On the cusp of innovations such as the Internet of Things, wearable devices and smart cities, the U.S. semiconductor industry is poised for growth,” said Krzanich. “I look forward to collaborating with colleagues and policymakers to ensure that our industry reaches its full potential, continues to create jobs and keeps America at the forefront of technological advancement.”

Dr. Sayiner joined Intersil as president, CEO and director in March 2013. Prior to joining Intersil, he served as president, CEO and director of Silicon Laboratories from September 2005 to April 2012. Previously, Sayiner held various leadership positions at Agere Systems Inc., which included Executive Vice President and General Manager, Enterprise and Networking Division from August 2004 to September 2005; and Vice President and General Manager, Networking ICs Division from March 2002 to August 2004.

“Necip Sayiner has extensive industry experience and a strong technical background,” Toohey said. “His skills and leadership will be a tremendous asset to our association as we work to enact pro-innovation policies and build a stronger semiconductor industry in the U.S. We welcome him as 2015 SIA vice chairman.”

“I’m pleased to be supporting the SIA as vice chairman and helping to drive awareness of the importance of the semiconductor industry to our nation’s economic health,” said Sayiner. “Now more than ever, it is vital that we fight for government policies that promote growth and competitiveness.”

Samsung Electronics Co. today introduced new chip-on-board (COB) LED package products, the LC006B and LC008B, with six and eight watts of power respectively. The new packages join five others in Samsung’s popular LC series (LC013B, LC019B, LC026B, LC033B and LC040B), to complete its COB package line-up.

“With the introduction of our new under-10 watt COB packages, we are signaling our intent to aggressively target the indoor LED lighting market,” said Bangwon Oh, Senior Vice President, Strategic Marketing Team, LED Business, Samsung Electronics. “Samsung will continue to advance its LED technology and business objectives by providing lighting manufacturers with the best in LED lighting components, delivering exceptionally high-quality LED package and engine products and services that reliably meet customer needs,” he added. “We remain dedicated to increasing our breadth of market solutions, to further grow our LED lighting component business.”

A chip-on-board LED package provides a single light source that combines multiple LED chips to achieve higher light intensity and uniformity, while simplifying luminaire design.

The LC006B and LC008B offer high-efficacy levels of 140lm/W and 142lm/W at 5000K CCT, respectively. The new packages will support a wide range of CCT (Correlated Color Temperature) specifications from 2700K to 5000K with a CRI (Color Rendering Index) over 80. They also feature a compact package size with an 8mm LES (Light Emitting Surface) and a package structure that can be easily connected with holders or screw mounts for greater installation convenience.

Samsung’s LC series has gained widespread attention for delivering high luminance from a small LES, as well as low heat resistance and outstanding light efficacy. The LC packages also feature high color uniformity with 3-step MacAdam ellipses and consistently superior light quality.

Samsung COB LED lighting solutions now can be used in a significantly wider range of applications, including downlight for home lighting, flood light for industrial lighting, and spotlight and downlight for commercial lighting.

Worldwide silicon wafer area shipments increased during the third quarter 2014 when compared to second quarter area shipments according to the SEMI Silicon Manufacturers Group (SMG) in its quarterly analysis of the silicon wafer industry.

Total silicon wafer area shipments were 2,597 million square inches during the most recent quarter, a 0.4 percent increase from the 2,587 million square inches shipped during the previous quarter. New quarterly total area shipments are 11.0 percent higher than third quarter 2013 shipments, according to SEMI.

“After reaching record levels in the second quarter, silicon wafer shipment volume growth plateaued during the most recent quarter,” said Hiroshi Sumiya, chairman of SEMI SMG and general manager of the Corporate Planning Department of Shin-Etsu Handotai Co., Ltd. “Year-to-date silicon volumes are 10 percent higher than the same period last year.”

Quarterly Silicon Area Shipment Trends

 

Million Square Inches

 

Q3 2013

Q2 2014

Q3 2014

Q1-Q3 2013

Q1-Q3 2014

Total

2,341

2,587

2,597

6,859

7,548

Semiconductor Silicon Shipments* – Millions of Square Inches

Silicon wafers are the fundamental building material for semiconductors, which in turn, are vital components of virtually all electronics goods, including computers, telecommunications products, and consumer electronics. The highly engineered thin round disks are produced in various diameters (from one inch to 12 inches) and serve as the substrate material on which most semiconductor devices or “chips” are fabricated.

All data cited in this release is inclusive of polished silicon wafers, including virgin test wafers, epitaxial silicon wafers, and non-polished silicon wafers shipped by the wafer manufacturers to the end-users.

The Silicon Manufacturers Group acts as an independent special interest group within the SEMI structure and is open to SEMI members involved in manufacturing polycrystalline silicon, monocrystalline silicon or silicon wafers (e.g., as cut, polished, epi, etc.). The purpose of the group is to facilitate collective efforts on issues related to the silicon industry including the development of market information and statistics about the silicon industry and the semiconductor market.

For more information on the SEMI Worldwide Silicon Wafer Shipment Statistics, visit www.semi.org/en/MarketInfo/SiliconShipmentStatistics.

The Semiconductor Industry Association (SIA), representing U.S. leadership in semiconductor manufacturing and design, today applauded a long-sought deal between the U.S. and China to expand the Information Technology Agreement (ITA), a key trade pact that promotes fair and open trade by providing for duty-free treatment of certain information and communications technology (ICT) products, including semiconductors.

Following negotiations on the sideline of the Asia-Pacific Economic Cooperation (APEC) Leaders’ meeting in Beijing, President Obama announced a bilateral agreement on the product scope of an expanded ITA that includes next generation semiconductors, static converters and inductors, and an array of technology products including medical devices, GPS devices, software media, ICT testing instruments, and others. This breakthrough bilateral agreement will enable all negotiators to return to Geneva to finalize a pluri-lateral ITA deal, with full talks targeted for December.

“The ITA has played a central role in helping the U.S. semiconductor industry drive innovation, create jobs, lower consumer prices and connect communities throughout the world,” said Brian Toohey, president and CEO, Semiconductor Industry Association. “Today’s agreement between the U.S. and China to expand the ITA is a hard-fought victory for the U.S. semiconductor industry and a big win for the U.S. economy and consumers around the world. We look forward to all ITA countries finalizing a deal as soon as possible.”

An expanded ITA – with an estimated value of over $1.4 trillion of annual world trade – represents one of the most valuable agreements for the global high tech industry in nearly two decades. It provides the first opportunity to include newly developed products resulting from the dynamic technological developments in the information technology sector since 1996, when the ITA was originally concluded.

U.S. negotiators sought expanded coverage for new and innovative semiconductor products, including multi-component semiconductors (MCOs). MCOs comprise a growing share of the global semiconductor market, and will be key to continued growth and innovation in a vast range of downstream products, services, and sectors, providing the basis for much needed economic growth and jobs. Inclusion of MCOs in an expanded ITA would save the industry $150 to $300 million in global annual tariffs. U.S. semiconductor companies stand to benefit significantly from expanding the ITA, given that semiconductors are one of America’s top exports.

As the trend toward “smart” products continues, demand for advanced semiconductor products like MCOs has been growing consistently in the past few years and will continue to do so in the future. According to industry experts and SIA estimates, global sales of MCOs are estimated to grow by 10 percent annually over the next 5 years.

“Expanding the ITA to keep pace with the latest technologies will fuel foreign and domestic semiconductor design and manufacturing investments, reduce costs for consumers, promote exports, and strengthen overall semiconductor sector development and growth,” said Toohey. “SIA would like to extend sincere thanks to President Obama and the U.S. negotiating team for achieving this strong and successful outcome for American businesses and consumers.”