Category Archives: LEDs

By Shannon Davis, Web Editor

The core element of the semiconductor industry’s roadmap has been scaling – but Gopal Rao believes that isn’t enough anymore.

“The roadmap has never taken into consideration what the consumers were asking for,” said Mr. Rao, on Wednesday’s closing session at The ConFab 2014.

The industry has enjoyed a stable, predictable industry for many years, as we made PCs and a lot of PCs. However, these are no longer the driving devices in the consumer market, and with different cost structures and more pressure to innovate than ever before, Mr. Rao stressed that the industry’s tendency to solely focus on scaling was no longer going to be enough to keep up with shifting consumer demands. Mr. Rao’s main charge: the industry needs to intercept consumer thought and demand and determine how it is going to impact the semiconductor industry and supply chain.

“We need to cater the roadmap to the technologies that are coming and the products that consumers want,” Mr. Rao said.

In order to adapt, Mr. Rao explained that it was imperative to integrate the entire supply chain into the roadmap if we really want to make significant strides in the manufacturability of these new products.

“We need to look at the roadmap as an ecosystem – not just materials, not just equipment, but the entire picture. We need to understand how to bring the supply chain into the picture,” Mr. Rao said.

To do this, Mr. Rao outlined the elements of effective problem solving and encouraged his audience to become masters of it. To be effective in the evolving technology landscape, Mr. Rao stressed the importance of understanding and analyzing every aspect of the supply chain, down to the smallest component, all of which contribute to defects and can no longer be ignored if quality is to be maintained.

“You need to understand to the smallest degree of your supply chain,” Mr. Rao charged ConFab’s attendees. “You need to analyze and trace the data. If you don’t do that, then the time to market and time to money are sacrificed.”

“We can’t follow Moore’s Law conveniently and forget about what’s two years down the road,” he concluded.

Gopal Rao presents at The ConFab 2014 on June 25, 2014.

Gopal Rao presents at The ConFab 2014 on June 25, 2014.

Storing gas on a sorbent provides an innovative, yet simple and lasting solution.

BY KARL OLANDER, Ph.D. and ANTHONY AVILA, ATMI, Inc., an Entegris company, Billerica, MA

The period following the introduction of subatmospheric pressure gas storage and delivery was punctuated by continuous technical innovation.

Even as the methodology became the standard for supplying ion implant dopants, it continued to rapidly evolve and improve. This article reflects on the milestones of the last 20 years and considers where this technology goes from here.

From the beginning, the semiconductor industry’s concern over using highly toxic process gases was evident by the large investment being made in dedicated gas rooms, robust ventilation systems, scrubbers, gas containment protocols and toxic gas monitoring. While major advances have been made in the form of automated gas cabinets and valve manifold boxes, gas line components, improved cylinder valves and safety training, the underlying threat of a catastrophic gas release remained.

Risk factors targeted

The underlying risk with compressed gases is twofold: high pressure, which provides the motive force to discharge the contents of a cylinder, and secondly, a relatively large hazardous production material inventory, which can be released during a containment breach. Pressure also is a factor in component failure and gas reactivity, e.g., corrosion. Mitigating these issues would considerably increase safety.

FIGURE 1. The stages of developing a new chemical precursor for use in commercial IC production.

FIGURE 1. The stages of developing a new chemical precursor for use in commercial IC production.

Analysis of the risks suggested an on-demand, point-of-use gas generator would improve safety by both reducing operating pressure and gas inventory[1]. The challenges associated with this approach include complexity of operation and gas purity, especially in a fab or process tool setting. Chemical generation of arsine, while possible, per equation [A], also substituted a highly reactive toxic solid for arsine[2]. Considerable safety and environmental issues accompanied the operation of such a generator. An on-demand, point-of-use electrochemical approach for supplying arsine, per equation [B], would also eliminate the need for high pressure storage if the associated operational issues could be overcome. Numerous attempts at developing a commercial electrochemical generator just never proved successful[3].

[A] KAsH2 + H2O —> AsH3/H2O + KOH
[B] As(s) + 3H2O + 3e(-) —> AsH3(g) + 3OH(-)

Innovation from a simple(r) solution

Pressure swing adsorption processes utilize the selective affinity between gases and solid adsorbents, and are widely used to recover and purify a range of gases. Under optimal conditions, the gas adsorption process releases energy and produces a material that behaves mores like a solid than a gas.

Early work at reversibly adsorbing toxic materials on a highly porous substrate showed promise. In 1988, the Olin Corporation described an arsine storage and delivery system where the gas was [reversibly] adsorbed onto a zeolite, or microporous alumino- silicate, material[4]. A portion of the stored gas could be recovered by heating the storage vessel to develop sufficient arsine pressure to supply a process tool. In 1992, ATMI supplied a prototype system based on the Olin technology to the Naval Research Lab in Washington, D.C.

The breakthrough that lead to the first commercial subatmospheric pressure gas storage and delivery system occurred when ATMI reported the majority of the adsorbed gas could be supplied to the process by subjecting the storage vessel to a strong vacuum. Using vacuum rather than thermal energy simplified the process, providing the means for an on-demand system[5]. Using a sorbent had the effect of turning the gas into something more akin to a “solid.” That characteristic, coupled with the absence of a pressure driver, delivered an inherently safe condition. The vacuum delivery condition also helped define where the technology would find its first application: ion implantation[6].

Safe and efficient gas storage and delivery

In 1993, prototype arsine storage and delivery cylinders based on vacuum delivery were beta tested at AT&T in Allentown, PA[g] [f]. The system was trademarked Safe Delivery Source®, or SDS®. Papers were presented on safe storage and delivery of ion implant dopant gases the following year in Catania, Sicily at the International Ion Implant Technology Conference[7].

The goal to find a safer method to offset the use of compressed gases was realized: (1) gas is stored at low pressure (ca. 650 Torr at 21°C) and (2) the potential for large and rapid gas loss is averted. Leaks, if they occur, whether by accidental valve opening or a containment breach, would be first inward into the cylinder. Once the pressure equalizes, gas loss to the environment would be governed mainly by diffusion as the gas molecules remain associated with the sorbent. The SDS package, while not a gas generator per se, effectively functions like one.

FIGURE 2. Cutaway view of SDS3 carbon pucks within a finished cylinder.

FIGURE 2. Cutaway view of SDS3 carbon pucks within a finished cylinder.

While subatmospheric pressure operation is an artifact of having to “pull the gas” away from the sorbent, it has become synonymous with safe gas delivery. The optimization work which followed focused on reducing pressure drop in the gas delivery system by improving conductance in valves, mass flow controllers and delivery lines. A restrictive flow orifice was no longer required. The new gas sources proved to work best when in close proximity to the tool.

The years after this technology introduction also saw considerable efforts to improve the sorbent; ultra-pure carbon replaced the zeolite-based material used in the first generation SDS (SDS1), roughly doubling the deliverable quantities of gas per cylinder. These granular carbon sorbents in the SDS2 were later replaced by solid, round monolithic carbon “pucks” in SDS3 (FIGURE 2), which necessitated the cylinder be built around the sorbent[8]. This improvement again roughly doubled gas cylinder capacity.

Recognized in international standards

In 2012, the United Nations (U.N.) recognized the uniqueness of adsorbed gases and amended the Model Regulation for the Transport of Dangerous Goods by creating a new “condition of transport” for gases adsorbed on a solid and assigning a total of 17 new identification numbers and shipping names to the Dangerous Good List. Adoption is expected to occur by 2015. A few of the additions are noted here.

Arsine   – UN 2188 – compressed
Arsine, adsorbed – UN 3522 – SDS
Phosphine – UN 2199 – compressed
Phosphine, adsorbed – UN 3525 – SDS

FIGURE 3. The evolution of a SAGS Type 1 gas package.

FIGURE 3. The evolution of a SAGS Type 1 gas package.

In recent years, fire codes have been updated through the definition and classification of subatmospheric Gas Systems, or SAGS, based on the internal [storage] pressure of the gas.9 Systems based on both sub-atmospheric pressure storage and delivery are designated as Type 1 SAGS. It is important to note that the UN definition for adsorbed gases, and the resulting new classifications mentioned above, only applies to Type 1 SAGS, defined as follows:

3.3.28.5.1 Subatmospheric Gas Storage and Delivery System (Type 1 SAGS). A gas source package that stores and delivers gas at sub-atmospheric pressure and includes a container (e.g., gas cylinder and outlet valve) that stores and delivers gas at a pressure of less than 14.7 psia at NTP.

It is also worth mentioning that sub-atmospheric pressure gas delivery can also be achieved using high pressure cylinders by embedding a pressure reduction and control system. The Type 2 SAGS typically employs a normally closed, internal regulator[s] that a vacuum condition to open. This is not a definition of sub-atmospheric storage and delivery, but of sub-atmospheric delivery only.

3.3.28.5.2 Subatmospheric Gas Delivery System (Type 2 SAGS). A gas source package that stores compressed gas and delivers gas subatmospherically and includes a container (e.g., gas cylinder and outlet valve) that stores gas at a pressure greater than 14.7 psia at NTP and delivers gas at a pressure of less than 14.7 psia at NTP.

In general, Environmental Safety and Health managers, risk underwriters and authorities having jurisdiction recognize the importance of SAGS and requires recommend their use whenever process conditions allow[10].

Expanding SAGS into new applications

Taking the lessons learned from SDS2/SDS3 in ion implant operations, along with key findings from
other applications like HDP-CVD (the SAGE package) and combined with sorbent purification and carbon nanopore size tuning, SAGS Type 1 packages are poised to offer their safety advantages in new and emerging areas, as well as add even more safety and efficiency benefits. Currently, a new package called Plasma Delivery SourceTM (PDSTM) is available for high flow rate applications, while maintaining all the safety attributes of the SAGS Type 1 package.

Also, in addition to the inherent safety, PDS employs a pneumatic operator (valve) to the cylinder which further minimizes the opportunity for human error. In an emergency, such as a toxic gas alarm, pressure excursion, loss of exhaust, etc., gas flow at the source can be quickly stopped and the cylinder isolated. Cycle/purge operations are made safer as human involvement is minimized. Human-initiated events, like over-torqueing the valve, failing to close the valve or even back-filling a cylinder with purge gas, are prevented.

SDS1 SDS2 SDS3
Arsine 200 559 835
Phosphine 85 198 385

Expanding the use of SAGS beyond the domain of ion implant involves successfully navigating key process factors such as operating pressure, flow rates, proximity to the tool and purity. One approach includes coupling the PDS cylinder and gas cabinet together to yield a plug and play “smart” delivery system. Unlike high pressure systems, which are more concerned with excess flow situations, knowing and controlling pressure allows a SAGS cabinet to operate at a reduced risk. This enables linking cabinet ventilation rates with the system operating pressure. During normal operating conditions, the exhaust rate could be reduced by up to 80 percent because the system is operating sub-atmospherically. Should the operating pressure exceed a preset threshold, the exhaust flow would automatically revert to a higher range or the cylinder valve would close.

The future, therefore, could see these PDS packages extended to another level by incorporating them into smart delivery systems, which will further reduce risk, maximize efficiency, improve cost of ownership and expand the footprint for SAGS into new applications like plasma doping, solar, epitaxy and etch.

Summary

During the last 20 years, the semiconductor industry undertook a large effort to develop safer gas delivery technologies to reduce risks associated with dopants used in ion implant. Many technologies were considered, including chemical and electrochemical gas generators, complexing gases with ionic liquids or mechanically controlling cylinder discharge pressure using embedded regulator devices.

In the end, storing gas on a sorbent provided an innovative, yet simple and lasting solution. Gas-sorbent interactions are well understood, reproducible and can be achieved with a minimum of moving parts. Gas release risks, driven by pressure, are all but removed from consideration. And any potential for human error continues to be a target for improvement wherever toxic gases are used.

References

1. Proc. Natl. Acad. Sci. USA 89 pp 821-826, 1992.
2. Appl. Phys. Lett., 60 1483
3. Electron Transfer Technology, US Patent 59225232
4. Olin Corporation, US Patent US4744221A
5. Advanced Technology Materials, US Patent US5518528 6. Many thanks to Dan McKee and Lee Van Horn for being the first of many early adopters.
7. Proceedings of the Tenth International Conference on Ion Implantation Technology, 1994, pp 523-526.
8. DOT-SP 13220.
9. NFPA 318, Standard for the Protection of Semiconductor Fabrication Facilities 2012 Edition. 10. SAGS in the FAB, SST reference

ATMI is a wholly owned subsidiary of Entegris, Inc. ATMI, Safe Delivery Source, SDS, Plasma Delivery Source and PDS are trademarks of Entegris, Inc. in the U.S., other countries, or both. All other names are trademarks of their respective companies.

By Mike Rosa, Applied Materials

In 2004/2005, shipments of 300mm wafer fab equipment (WFE) began to outpace that of 200mm platforms.  As the “baton” in the node-scaling race appeared to pass from 200mm to 300mm, it was clear that device manufacturers were transitioning to higher-volume, more cost-effective 300mm toolsets for cost efficiencies of the production of advanced memory and microprocessor devices.  Tool suppliers enabled the transition with the availability of the comprehensive 300mm toolset and began a new 300mm technology race, and leaving the major OEMs to focus on service and spares for the now legacy 200mm toolsets.  With advanced device designs fully transitioned to 300mm, many IDMs and foundries were left with growing excess capacity on their 200mm production lines.

Surprisingly, new life and attention has been refocused on the 200mm tool sets and available capacity as two phenomena are driving new requirement and economics.

First, in 2006, a MEMS (Micro-Electro-Mechanical Systems)-based accelerometer became a game changer when introduced into Nintendo’s next-generation Wii motion controller.  This was the first significant and novel use of a MEMS device for motion tracking in a high-volume consumer application.  Next, in 2007, when Apple Inc. first introduced the iPhone to the world, it came to light that MEMS devices were enabling a number of its advanced motion-based features.

Later, it would be noted that more than 75% of the semiconductor device content in the iPhone was sourced from 200mm wafer starts.  The devices manufactured on 200mm wafers spanned a wide variety of applications that included not only MEMS applications (motion, audio, RF, etc.) but also CIS (CMOS Image Sensor), communications, power management and analog devices.

Sold in the hundreds of millions per year, first the iPhone and then the multitude of other smart phones, tablet PCs, and related digital devices, that followed, drove the adoption of the emerging “More-than-Moore” class of devices (which were first pioneered  on 150mm wafers at the time) onto 200mm wafers.  These high-volume consumer applications gave rise to a resurgence in both new and used of 200mm equipment. This sudden requirement for new sourcing of “legacy” 200mm toolsets placed considerable strain on a supply  chain that then focused almost exclusively on 300mm; tool vendors struggled in  refurbishment, upgrade, and production of matching tools and processes that performed outside the requirements of traditional semiconductor applications (see Figure 1).

200mm equipment market gaiting new lease on life

200mm equipment market gaiting new lease on life

Some of these additional requirements — including new and thicker films (>20µm), advanced DRIE (Deep-Reactive-Ion-Etch) capabilities capable of delivering aspect ratios approaching 100:1, and new process capabilities like HFv (Hydrofluoric Acid vapor) release etch and Wafer Bonding — resulted in OEMs needing to restart 200mm tool development.  In some cases, OEMS needed to expand their product portfolios to support the growing needs of customers producing devices in the rapidly expanding “More-than-Moore” device segment.

Fast forward to 2014 —what a difference approximately seven years has made to the industry segment and more specifically the number of opportunities in the 200mm WFE market for the new class of devices.

The surge in mobile device applications and more recently wearable technologies, has meant that device manufacturers are increasingly  under  pressure to produce cheaper, smaller, more capable and more power efficient devices most economically and efficiently — and this remains optimally on legacy 200mm toolsets.  Combining this with the materials and production challenges presented by ultra-high volume applications spelled out in the ‘Trillion Sensor Vision’ and the now looming IoT (Internet-of-Things) (see Figure 2), and it becomes clear that OEMs who continue to support and develop solutions for the 200mm WFE market  have both significant challenges and potential rewards.

Figure 2. The IoT (Internet-of-Things) by most accounts prescribes device volumes as high as 1 Trillion (per year!) by 2024. These device volumes are accompanied by severe reductions in ASP. Maintaining expanded device functionality, a reduced device size and a further reduced cost of fabrication, presents considerable challenge to both device producers and tool OEMs alike.

Figure 2. The IoT (Internet-of-Things) by most accounts prescribes device volumes as high as 1 Trillion (per year!) by 2024. These device volumes are accompanied by severe reductions in ASP. Maintaining expanded device functionality, a reduced device size and a further reduced cost of fabrication, presents considerable challenge to both device producers and tool OEMs alike.

Rising to the challenge presented by the demands of these rapidly growing market segments, Applied Materials is an OEM that has, over the past several years, continued to invest in the R&D of its 200mm portfolio products.  Challenged to deliver new materials and processes (see Figure 3) in support the growing class of 200mm emerging technology applications that have come to include MEMS, CIS, Power Device, Analog, WLP (Wafer Level Packaging), TFB (Thin Film Battery), TSV (through-silicon via), etc., Applied Materials believes that working close to the customer and more collaboratively throughout the supply chain is paramount to success in a technically challenging and price sensitive market. The 200mm ecosystem supporting broadly expanding cost-senstive device classes represent a new fork in the roadmap that has been almost myopically focused on Moore’s Law evolution.

deliver substantially re-engineered 200mm toolsets to produce advanced materials and processes needed to support the next generation of “More-than-Moore” devices. Source: Applied Materials

deliver substantially re-engineered 200mm toolsets to produce advanced materials and processes needed to support the next generation of “More-than-Moore” devices. Source: Applied Materials

Learn more about how this dynamic market is changing at the session on “Secondary Equipment for Mobile & Diversified Applications” at SEMICON West 2014 in San Francisco, Calif on July 8-10.

Crystal IS, a developer of high-performance ultraviolet (UVC) LEDs, this week announced availability of Optan. The first commercial semiconductor based on native Aluminum Nitride (AIN) substrates, Optan provides a unique technology platform for increased detection sensitivity, essential for analytical and life sciences instrumentation—from monitoring of chemicals in pharma manufacturing to drinking water analysis.

The Optan product is a breakthrough for design engineers looking to overcome limitations associated with traditional UV lamps, including deuterium and xenon flash lamps. As an enabling technology, Optan allows developers to fully exploit the power of UV-based technology to improve productivity, increase accuracy and create greater flexibility in product designs.

“This is an exciting time for Crystal IS and an achievement for the semiconductor industry as a whole,” said Larry Felton, CEO of Crystal IS. “Optan will help instrument manufacturers build smaller, more powerful tools and products with a lower overall system cost. We look forward to the scientific and environmental contributions their new products will provide.”

The superior light output and spectral quality of the Optan UVC LED technology, made possible by the unique, low defect AIN substrate, delivers best-in-class reliability, and longer lifetimes, a game changer for life sciences and analytical instrumentation, including environmental monitoring.

Immediate use cases include:

  • HPLC (high-performance liquid chromatography), a powerful tool in analysis for detecting chemicals and compounds in life sciences.
  • Spectrometers, used in multiple applications in testing and analysis across biotech, life sciences and environmental monitoring.
  • Water quality monitoring sensors, becoming increasingly important for detecting chemicals in water from fracking, water security and the use of treated wastewater.

 

The Optan LEDs are currently available in peak wavelengths from 250nm to 280nm and power bins from 0.5mW to 2mW, ideal for spectroscopic applications because of their high spectral quality and reliability. Full availability for all bins under 3mW is anticipated for next quarter with higher power bins (3-4mW) available this Fall, 2014.

By Debra Vogler, SEMI

The introduction of new materials, such as III-Vs, into high-volume manufacturing of semiconductors, likely will occur sometime around the 7nm and/or 5nm nodes. III-V’s introduction, along with the potential transition to 450mm wafers, and the increasing expansion of global regulatory requirements, will heighten environmental, health and safety (EHS) concerns that must be addressed as the industry goes forward. The Sustainable Manufacturing Forum to be held in conjunction with SEMICON West 2014, will feature experts in the manufacture of semiconductors, microelectronics, nanoelectronics, photovoltaics, and other high-tech products.

One of the Sustainable Manufacturing Forum speakers, Richard Hill, Technology Infrastructure manager at SEMATECH, will discuss how the addition of III-V materials into the high-volume manufacture of semiconductors will bring sustainability issues to the forefront, primarily driven by the toxicity of arsenic that is used in much greater quantities in III-V production. Challenges include wastewater treatment, toxic gas detection control and abatement, and the need for robust protocols to ensure operator and maintenance personnel safety. Hill will speak at the Next Generation Eco Fab session on July 9 at SEMICON West.

SEMATECH recently completed a joint study of III-V EHS challenges with the College of Nanoscale Science and Engineering (SUNY CNSE). The assessment consisted of running 300mm wafers through a representative 5nm III-V process flow (Figure 1). (Many semiconductor industry experts agree that III-V materials will enter the process flows in high volumes at 5nm.) Among the processes that will pose the greatest challenges with respect to III-V materials are MOCVD, CMP, wet etch/clean, dry etch, and film deposition. The project was heavily focused on understanding the levels of arsenic that would be present in wastewater, as well as loading of other III-V materials. The impact of III-V outgassing that could occur during processing and the amounts of gases that could be released when a tool is opened for maintenance were of particular interest in the project.

Figure 1. Example 5nm III-V flow: key ESH challenges. SOURCE: SEMATECH

Figure 1. Example 5nm III-V flow: key ESH challenges. SOURCE: SEMATECH

Among the high-level challenges associated with wet etch are the potential for arsine and phosphine outgassing (during processing).

“Wet etch tools are designed to have a controlled environment,” said Hill, “but they are not like high-vacuum systems that are designed to contain toxic gases.” Hill told SEMI that if the exhaust system fails during the processing of a wafer, it is critical to know the risks and ensure mitigation. The SEMATECH/CNSE project looked at a range of different chemistries and identified those that are low risk for arsine and phosphine generation (and therefore, a low risk of outgassing) and those that had a high risk of outgassing. The low risk chemistries are, naturally, the ones that the industry should try to design into a III-V flow.

The joint project also evaluated the III-V loading in wastewater from the wet etch process. “There were measurable quantities of arsenic in the waste stream,” said Hill. Though he added that while the levels weren’t significantly high, some treatment of the waste water would have to be done depending on what’s allowable within local discharge limits and permits. With the industry looking ahead to 5nm and already designing the fabs of the future, Hill believes that these results will be important for specifying wastewater treatment.

The joint SEMATECH/CNSE project also evaluated the wastewater stream from the burn wet scrubber when III-V materials are used in a contact etch (dry) process. The study found measurable arsenic in the wastewater. “Fabs of the future will need wet treatment facilities for arsenic and indium,” Hill told SEMI. “In recent years, concerns about indium have been elevated, and we believe that tighter restrictions on it will be introduced in the future.” Chamber clean is also critical when etching (dry) III-V materials. “If you don’t do the right type of cleaning regimen, you could have next-wafer contamination.” Additionally, without the proper protocol, maintenance personnel could be exposed to arsine or phosphine when the chamber is opened, depending on the process. The cleaning protocol is highly dependent on the type of etch being done, and each type could have different requirements.

For Hill, the key takeaway from the joint evaluation was that, while there are risks when processing III-V materials, there are no showstoppers — solutions can be engineered. “People should take these risks seriously, but they shouldn’t be scared off by them,” said Hill.

Sustainability and the Role of Collaboration and Standards

Steve Moffatt, CTO, Front-end Equipment at Applied Materials (also a speaker at the Next Generation Eco Fab session at the Sustainable Manufacturing Forum at SEMICON West), told SEMI that many established procedures for dealing with arsine and phosphine already exist. He views the efforts by the industry going forward as one of accurately quantifying the size and scope of the problem. “The methods are in place, but the absolute quantities of III-Vs will be substantially higher,” said Moffatt.

Additionally, other emissions (e.g., PFCs) that are well regulated and generally understood, will see an increase in the quantities as a result of more layers being processed for 3D chips. Even the potential transition to 450mm wafers will figure into the industry’s need for a more accurate scope of the EHS challenges involved. The increase in wafer size will naturally lead to larger manufacturing equipment noted Moffatt and that, in turn, will drive increases in energy, water, and process chemical consumption at both the tool and fab levels.

As regulatory pressure increases on a global scale, the situation also becomes more complex. Beyond the use of new materials such as III-Vs and nanomaterials, Moffatt commented that new methods of energetics (i.e., ways of putting energy into a processing system) will require very careful and close assessment of the risk control measures. Another sustainability issue arises from the basic fact that, as opposed to the highly prevalent element of silicon in the earth’s crust, many of the newer materials being used in higher quantities for semiconductor manufacturing (e.g.,Ga, As, etc.) are much less abundant. These exotic materials, of necessity, must be handled in the most efficient of ways.

Going forward, there will be increased regulatory pressure to reduce a fab’s carbon footprint and produce more sustainable products. Moffatt says the industry can expect more pressure to reduce greenhouse gas (GHG) emissions along with adhering to conflict minerals regulations and managing EHS concerns throughout the entire life-cycle of a product (Figure 2). “One company can’t do it on its own, it’s a life-cycle consideration,” said Moffatt. “If we have the right collaboration together, we have a greater probability with the right kinds of standards of bringing good, effective green chemistry solutions to high-value problems.”

Figure 2. Consensus building in multi-stakeholder life-cycle risk assessment of manufacturing technology and products. SOURCE: Applied Materials (used with permission of ITRS)

Figure 2. Consensus building in multi-stakeholder life-cycle risk assessment of manufacturing technology and products. SOURCE: Applied Materials (used with permission of ITRS)

Regarding standards activities on energetics, Moffatt pointed to ongoing collaboration and hazard assessment between SEMI, SEMATECH and other industry groups.

“We will need to continually evaluate the need for additional standards activities — both new and updates — in addition to industry collaboration on “Green” chemistry,” said Moffatt.  “As a starting point, sustainability concerns could be built into the initial assessment of new chemicals and processes, which will begin the discussion and raise awareness of these issues.”

Hill (SEMATECH) and Moffatt (Applied Materials) will be joined by speakers from IMEC, Intel, Samsung, Air Products, and MW Group at the “Next Generation Eco Fab” session of the Sustainable Manufacturing Forum at SEMICON West 2014, July 7-10 in San Francisco, Calif.  For more information, visit: http://www.semiconwest.org.

By Christian Gregor Dieseldorff, Industry Research & Statistics, SEMI

According to the IMF and predictions by many other market research firms, 2014 and 2015 are expected to be growth years, comparable to or even better than the past few years. After years of decline, even the Europe area will show positive GDP growth in 2014 and 2015, signaling a strengthening recovery.

Historically, GDP, semiconductor revenues, and semiconductor capex are correlated.  Last year was an exception with revenue up about 6 percent (year-over-year) but capex down -3 percent to -4 percent. Projected revenue is now predicted to be 8 percent for 2014 and 5 percent for 2015.

SEMI’s data show that after two years of decline, semiconductor capex (excluding fabless and backend) is expected to grow for two years. While some companies are expected to keep capex steady in 2014, others have increased plans in 2014 with capex expected to increase 8 to 10 percent. With further growth between 6 and 8 percent expected in 2015, the industry may approach records at levels similar to 2007 and 2011.

Fab Equipment Spending: 24% in 2014 with Possible Record in 2015

In the May 2014 World Fab Forecast publication, SEMI tracks more than 200 major projects involving equipment spending for new equipment or upgrades, as well as projects to build new facilities or refurbish existing facilities. Between last quarter’s report in February and now, 265 updates have been made to the proprietary SEMI database. SEMI now predicts 24 percent growth (to about US$35.7 billion) for fab equipment spending (new, used, in-house) for Front End facilities in 2014 and 11 percent growth (to about US$39.5 billion) in 2015. In terms of equipment spending, 2015 is on track to surpass all-time record year 2011. See Figure 1.

Figure 1

Figure 1

In 2014, the three largest regions for fab equipment spending will be Taiwan with over US$10.3 billion, the Americas with over US$6.8 billion, and Korea with over US$6.3 billion. In 2015, these same regions will lead in spending: Taiwan will spend over US$11 billion, Korea over US$8 billion, and the Americas almost US$7 billion.

Although sixth in 2014 for projected fab equipment spending, the Europe/Mideast region will show the strongest rate of growth, about 79 percent compared to the prior year. The same region will continue to grow quickly in 2015, with an increase of about 20 percent.

Trade Ratio for Leading-Edge Upgrades Affects Capacity

Worldwide installed capacity is very low for both 2014 and 2015 and SEMI data do not suggest that this will change the next four years.

Depending upon node transition, product segment, and age of a fab, the trade ratio for space affects capacity in more significant ways. Because of increased complexity at the leading edge nodes, such as more process steps and multiple patterning, fabs experience a decline in capacity as the same fab space produces less. Worldwide, installed capacity grew by less than 2 percent in 2013 and is expected to grow just 2.5 percent in 2014 and 3 percent in 2015.

The SEMI data predict that Foundry capacity continues to grow at 8 to10 percent yearly (a steady pace from 2012) and Flash will be up 3 to 4 percent for 2014. Although DRAM equipment spending is expected to grow by 40 percent in 2014 as many fabs are upgrade to leading-edge processes, installed capacity for DRAM is expected to stay flat or even drop by -2 percent. SEMI’s reports also cover capacity changes for other product segments: MPU, Logic, Analog/Mixed signal, Power, Discretes, MEMS, and LED and Opto.

According to the SEMI World Fab Forecast, by the end of 2014 there will be 26 volume fabs using technology nodes between 14nm to 16nm, including two with 3D-NAND. By the end of 2015, this is expected to increase to 33 volume fabs with 14nm to 16nm process nodes, including 11 with 3D NAND.

Fewer New Fabs but Will They be Enough?

Figure 2

Figure 2

According to SEMI, 2013 was an all-time record year for construction projects for semiconductor Front End facilities (new and refurbish existing fabs) with over US$9 billion spent. Although less construction projects will occur during 2014 and 2015, there are still a few significant new fabs being constructed or in planning stages, in regions such as Europe/Mideast, Japan, U.S., and Taiwan. Thirty facilities (including Discretes and LEDs) will begin volume production in 2014 and 2015.

Excluding foundries, existing and known, currently planned IC volume fabs will reach full capacity by 2018 according to SEMI data. Considering the diminishing prospect for high-volume 450mm fabs in the immediate future, and that overall capacity is lost when upgrading facilities to leading-edge nodes, the industry must add more 300mm fabs to meet demand. The timeline to build and equip these new complex facilities, about 1.5 years, suggest that new 300mm fab plans will need to start by next year.

Dow Corning today announced that its recently launched Dow Corning® MS-2002 Moldable White Reflector Silicone was the winner of the Non-Luminous Components, Specialty Hardware, Shades and Solar category at the 2014 LIGHTFAIR International Innovation Awards. This marks the third time in two years that Dow Corning’s Moldable Silicone product technology has garnered top recognition during LIGHTFAIR International’s (LFI) annual awards.

Held each year during LFI, the world’s largest annual architectural and commercial lighting trade show and conference, the award competition recognizes the best lighting-related applications and designs introduced over the past year. Judged by an independent panel of lighting industry professionals, MS-2002 Moldable White Reflector Silicone beat out 13 competitors to win its category.

“Cutting-edge LED design begin with cutting-edge LED materials, and MS-2002 Moldable White Reflector Silicone is helping to redefine the performance boundaries for next-generation LED lighting,” said Hugo da Silva, global industry director, LED Lighting at Dow Corning. “This new highly moldable reflective material is already making a clear impact on the LED industry, as demonstrated by its top spot among this year’s LFI awards. MS-2002 Silicone’s impact is further evident from the positive customer feedback on its exceptional performance and durability in a wide array of demanding, high-heat LED applications.”

Launched in late 2013, MS-2002 Silicone is a bright white material that extends its excellent photo-thermal stability and high-moldability to the reflective elements of LED lamp and luminaire applications. It targets reflectivity as high as 98 percent to help further boost light output from LED devices, improve overall energy efficiency and prolong device reliability. The new technology also provides excellent moldability to enable complex shapes, micro optical features, multifunctional parts and even undercuts once difficult to achieve with plastics or glass.

MS-2002 Moldable White Reflector Silicone can be easily overmolded onto transparent silicones and enables such LED concepts as mixing chambers for superior light output vs. competitive materials. The material offers outstanding mechanical, thermal and optical stability at temperatures exceeding 150° C where conventional LED materials, such as epoxies, polycarbonates and acrylics often yellow or degrade. This is critical as LED sources are increasingly expected to deliver more intense white light from comparatively smaller package sizes, and as customers seek smaller designs with higher luminous flux, which also drives up temperatures at the device level.

“Receiving this LFI award is a true honor,” da Silva added. “Not only does it recognize our contribution to an increasingly important market, but also spotlights our commitment to our LED customers and the industry as a whole.”

This year’s award for MS-2002 Silicone follows top recognitions for Dow Corning at last year’s LIGHTFAIR show.

LIGHTFAIR International is the world’s largest annual architectural and commercial lighting trade show and conference. Held recently at the Las Vegas Convention Center on June 3-5, the event sets the global stage each year for lighting, design and technology innovation.

After two years of decline, fab equipment spending for Front End facilities in 2014 is expected to increase 24 percent in 2014 (US$35.7 billion) and about 11 percent (US$39.5 billion).  In terms of equipment spending, 2015 may reach or even surpass historic record year 2011 (about US$39.8 billion). For the May 2014 SEMI World Fab Forecast publication, SEMI tracked more than 200 major projects involving equipment spending for new equipment or upgrades, as well as projects to build new facilities or refurbish existing facilities.   In the last three months, 265 updates were made to the database. See Figure 1.

Figure 1

Figure 1

In 2014, the three largest regions for fab equipment spending will be Taiwan with over US$10.3 billion, the Americas with over US$6.8 billion, and Korea with over US$6.3 billion.  In 2015, these same regions will lead in spending: Taiwan will spend over US$11 billion, Korea over US$8 billion, and the Americas almost US$7 billion. Although in sixth in regional equipment spending this year, the Europe/Mideast region will show the strongest rate of growth, about 79 percent compared to the previous year.  The same region will continue to grow fast in 2015, with an increase of about 20 percent.

Worldwide installed capacity is very low for both 2014 and 2015 and the SEMI data does not suggest that this will change over the next four years. Because of the increased complexity of leading-edge nodes, such as more process steps and multiple patterning, fabs experience a decline in capacity as the same fab space produces less.  Worldwide, installed capacity grew by less than 2 percent in 2013 and is expected to grow just 2.5 percent in 2014 and 3 percent in 2015.

SEMI’s detailed data predict that Foundry capacity continues to grow at 8-10 percent yearly (a steady pace since 2012) and Flash is up 3 to 4 percent for 2014. Although DRAM equipment spending is expected to grow by 40 percent in 2014 as many fabs upgrade to a leading-edge process, installed capacity for DRAM is expected to stay flat or even drop 2 percent.  SEMI’s reports also cover capacity changes for other product segments:  MPU, Logic, Analog/Mixed signal, Power, Discretes, MEMS, and LED and Opto.

The SEMI World Fab Forecast uses a bottom-up approach methodology, providing high-level summaries and graphs, and in-depth analyses of capital expenditures, capacities, technology and products by fab. Additionally, the database provides forecasts for the next 18 months by quarter. These tools are invaluable for understanding how the semiconductor manufacturing will look in 2014 and 2015, and learning more about capex for construction projects, fab equipping, technology levels, and products.

The SEMI Worldwide Semiconductor Equipment Market Subscription (WWSEMS) data tracks only new equipment for fabs and test and assembly and packaging houses.  The SEMI World Fab Forecast and its related Fab Database reports track any equipment needed to ramp fabs, upgrade technology nodes, and expand or change wafer size, including new equipment, used equipment, or in-house equipment.

SEMI today announced the appointment of Osamu Nakamura to the position of president of SEMI Japan effective July 1, 2014. Nakamura will succeed Yoichi Nakagawa, who is retiring from SEMI.

Nakamura assumes full responsibility for SEMI operations in Japan and will oversee development of the association’s programs, committees, products and services in the region.  He is responsible for relationships with SEMI members as well as industry, government, academia and other local associations and constituents in Japan.  Additionally, he is charged with supporting SEMI members from all regions that have interests in SEMICON Japan and the region’s premier microelectronics and advanced manufacturing supply chain event.

“High-technology manufacturing in Japan and the overall industry are undergoing significant changes.  As a highly experienced industry executive and long-time supporter of SEMI, I have great confidence in Nakamura-san to lead the region’s activity for the many SEMI members located or doing business in Japan,” said Denny McGuirk, president and CEO of SEMI.

“On behalf of all those that have worked with Nakagawa-san over his six-year tenure with SEMI, we extend our greatest appreciation and wish him well in his future endeavors.”

Nakamura has over 30 years of experience in the semiconductor equipment business in Japan and overseas.  He has held various management positions at Hitachi High Technologies, including head of its Semiconductor Equipment Business.  Prior positions include Managing Director, President and Chief Executive Officer for Hitachi High-Technologies (Singapore) and management positions in semiconductor equipment business operations in both Germany and the United States.

While an industry executive, Nakamura served on the SEMI Japan Regional Advisory Board and was elected to the SEMI International Board of Directors, a position he has vacated to serve as the head of SEMI regional operations. Nakamura earned a Bachelor’s Degree in Electrical Engineering from Waseda University.

Samsung Electronics today announced that it has improved the light quality of its LED packages and modules based on a 90 CRI (Color Rendering Index) for use in advanced lighting applications. Samsung is showcasing these LED components at the LIGHTFAIR International trade show exhibition being held here from June 3rd through 5th.

“With our improved color rendering, Samsung’s LED packages and modules now provide LED lighting makers with light quality that far surpasses that of conventional lighting applications, while adding to the energy efficiency of our LED lighting line-up,” said Bangwon Oh, senior vice president of strategic marketing team, LED Business, Samsung Electronics. “With more than 90 CRI, the enhanced color reproducibility of our best product platforms will make them even more attractive to lighting designers worldwide.”

Samsung’s LED product platforms include mid-power, high-power and chip-on-board (COB) packages as well as LED modules. With the improved CRI, Samsung LM561B and other mid-power LED packages can be used in a wider range of retrofit LED bulbs and downlights by reproducing colors comparable to those seen under natural sunlight. In addition, the improved high power LED LH351 series is suitable for MR, PAR and other spotlights that require high color rendering, along with high light output.

Samsung’s LED modules enhanced with 90 CRI include the LT-A302 module comprised of mid-power LED packages, and the SLE series, which uses COB-type packages. The LT-A302 is a linear, lens-attached module (LAM) with a thin, 21 millimeter-wide form factor. The SLE series modules are suitable for spotlights and track lighting that prioritize high light output.