Category Archives: LEDs

Universal Lighting Technologies, Inc. is starting the year on a high note with the announcement of its new corporate headquarters at 51 Century Blvd., Suite 230 in Nashville, Tennessee. Not only does the new building better position the company for growth, but it also comes newly equipped with innovative and energy-efficient lighting incorporated throughout the office, including updated meeting room technology for greater capabilities to network with customers.

“Universal Lighting has seen significant growth over the past few years since we joined the Panasonic family,” said Chris Holstein, Vice President of Marketing. “We’re excited to start the next chapter in our company’s future as we make the move to a new home where the lighting technology reflects the very products that have led to our success.”

The new corporate office positions the company for greater growth and includes leading designs and technologies from all members of the Panasonic Lighting Americas group.

LED technologies in the facility include LED downlights that use EVERLINE LED Drivers and Chip on Board LED Modules with 0–10V dimming controls. Existing recessed troffer lighting fixtures were upgraded with LED retrofit kits and EVERLINE linear LED modules to provide high efficiency lighting with high quality color and an extremely long rated life while being dimmable. DCL control technology allows the LED drivers to receive communications over the power line, providing energy management load shedding capabilities.

Universal Lighting’s new headquarters incorporates leading fluorescent technologies, including DEMANDflex ballasts, as well as six-lamp T8 fixtures installed throughout the unique and innovative office space. The lighting system also utilizes VariPRO 0–10V dimming in the main entry. Both technologies are incorporated with a Dialog Control System and occupancy sensors from Panasonic’s Douglas Lighting Controls for local zone control, manual overrides and facility scheduling.

The TOWA Corporation of Japan, a supplier of packaging equipment for semiconductor, electronics and LED industries, has decided to expand their activities in Europe with an Innovation Center for Packaging Development and announced the launch of TOWA Europe B.V.

Europe has become an area where special IC s and electronic applications are being developed and produced, such as sensors, MEMS, vision applications, specific ICs, in particular for semiconductor, automotive and medical applications .In 2004 TOWA Europe GmbH was established, to serve the many European customers. The activities originally consisted of the supply of the TOWA encapsulation equipment, after sales service and spare parts.

However, in addition to this, the cooperation with the package/product development centers of European customers and European institutes became an important activity and TOWA Europe started to play a role in the development of new products.

To further expand this, it has been decided to establish a Packaging Development Center in the Netherlands, for which TOWA Europe has been founded. This center is located at Geograaf 14, Duiven, The Netherlands.

Laboratory

A fully equipped laboratory with 2 TOWA molding systems, test and measuring equipment as well as an engineering department is available to give full support in all the phases of product development, from initial concept up to test, qualification and industrialization.

The TOWA Corporation of Japan, founded in 1979, is a supplier of molding and singulation equipment for the global semiconductor and electronics industries

Xicato, a developer of superior light quality from LED modules, announced today that it has relocated its San Jose headquarters to accommodate a new manufacturing line for the company’s next generation of products. The new 24 thousand-square-foot space is more than double the size of Xicato’s previous San Jose facility. The privately held company has invested millions of dollars in equipment and resources to meet the increasing global demand for its LED modules.

“Investment in our U.S. operations enables Xicato to rapidly develop and introduce innovative technologies and products for the global lighting industry and starting next month we will transition to full manufacturing mode,” said Menko de Roos, CEO of Xicato. “Our move timeframe was very short, and it was critical that the build-out and permitting went smoothly and matched our equipment arrival schedule. The City of San Jose’s appointment-based permitting process worked well and allowed us to meet critical milestones and get our operations up and running.”

Xicato’s new space includes areas for manufacturing, research and development labs and testing facilities for its LED modules. Class 100K cleanroom space is dedicated to a new manufacturing line; expanded reliability testing labs ensure product longevity and quality.

Xicato’s focus continues to be the delivery of quality light. The new manufacturing facility allows Xicato’s next generation of products to offer significantly improved efficiency to reduce energy use and costs, lowers the cost of Xicato’s modules and ushers in a new era of intelligent lighting – Lighting 2.0.

Hundreds of luminaires and applications ranging from retail shops to bars and restaurants, to homes, offices and retail locations can be viewed in Xicato’s web galleries on the company’s website.

Lighting designers, interior designers and others achieve their desired emotional impact using three different light types created by the company.

Standard Series light provides a smooth spectrum of light that feels natural and superior to ceramic metal halide and fluorescent lamps.

Artist Series light is indistinguishable from halogen-based light and gives Artist Series light an even richer feel compared to other sources.

Vibrant Series light brings out vivid, saturated colors and the details of texture for compelling and eye-catching visuals that capture and hold consumers’ attention.

The company’s new address is 101 Daggett Drive, San Jose, CA 95134, USA.

With a flood of new competitors set to initiate or increase the production of active-matrix organic light-emitting diode (AMOLED) panels next year, demand for materials used to make AMOLEDs is forecast  to rise by nearly 27 percent in 2014.

The global market for AMOLED light-emitting materials will expand to $445 million in 2014, up from $350 million this year, according to the new report entitled “Display Materials and Components Report – AMOLED Light-Emitting Material – 2014” from IHS Inc. While growth next year will moderate compared to the 49 percent rise in 2013, the market will swell by about $100 million in 2014, as presented in the figure below.

Screen Shot 2013-12-23 at 1.05.15 PM

“South Korea’s Samsung Display Co. Ltd. has successfully pioneered the AMOLED business during the last five years, attaining major success in the market for smartphone panels ranging in size from 3-inches to 5-inches,” said Doo Kim, principal analyst, display component and materials research. “Now other panel manufacturers are seeking to cash in on the expanding demand for AMOLEDs in smartphone, televisions and other products. This phenomenon will spur the continued increase in sales of materials used to create AMOLEDs in 2014.”

The organic light-emitting materials utilized in AMOLED panels can be largely divided into two categories: common functional layer materials and color-emitting materials.

The common layer materials include hole transport layer (HTL), hole injection layer (HIL), electron transport layer (ETL), electron injection layer (EIL), capping layer (CPL), charged generation layer (CGL), electron blocking layer (EBL), efficiency enhanced layer (EEL) and RGB prime layer materials.

Of these, the EBL and EEL materials are hardly used at this time, while the CGL material is used only in white organic light-emitting diode (WOLED) panels.

Materials such as PIN dopant are also adopted to improve efficiency.

The color-emitting materials are red, green and blue host and dopant materials. Yellow-green materials are used in WOLED.

Samsung Display started the AMOLED market when it commenced large-scale mass production in 2008. Since then, it has led the AMOLED market’s expansion.

In 2013, LG Display Co. Ltd. of South Korea launched a WOLED TV panel and a flexible AMOLED panel. Meanwhile, AU Optronics Corp. (AUO) of Taiwan introduced samples of small- to medium-sized AMOLED panels.

Next year, LG, AUO and Japan Display Inc. (JDI) are poised to commence or increase AMOLED panel production. As a result, light-emitting material makers are expected to compete in a more diverse market environment with increased demand and a broader base of customers. This will represent a marked change from the last five years, when they depended wholly on demand from Samsung Display.

Soitec and CEA have renewed their partnership for the next five years. This new contract aims to support Soitec’s strategy for the electronics, solar energy and lighting markets. It will focus on engineered substrates and materials offering higher performances and energy savings at a competitive cost.

As the new partnership is putting in place a powerful R&D ecosystem, time from research to product will be considerably reduced. Thanks to the strengths of CEA-Leti in electronic materials, multi-domain research and its pre-industrialization infrastructure, competitive R&D sample prototyping will be enabled thru a common platform, reducing time to market and R&D costs for Soitec and its customers.

The CEA-Leti and Soitec teams will focus their efforts on developing new materials generations to support Soitec road maps in three markets (electronics, solar energy and lighting). To do so, they will leverage the CEA-Leti and Soitec expertise and will use Smart Cut(TM) technology and extended tool box as key assets to support the next generations of mobile devices, solar cells and LEDs.

Dr. Carlos Mazure, CTO of Soitec, emphasized: “in our industry, competitive pre-industrialization research, development of technology and product prototypes have become very important to make the difference. The CEA-Leti and Soitec partnership establishes a powerful alliance that is capable of answering the numerous challenges of today’s industrial requirements and building on our well-established material expertise.”

“The agreement aims at accelerating exploratory research as well as technology innovation to prepare the products of tomorrow,” he added. “It complements the Soitec strategy of entering new markets with high-efficiency concentrating photovoltaic (CPV) technology, high-intensity LEDs for lighting applications and engineered substrates for electronic applications.”

Laurent Malier, Director of CEA-Leti, also commented on the partnership renewal, saying, “In recent years, Soitec has widely expanded its footprint and impact by addressing the electronics and energy challenges through its unique technologies which we developed together. Our partnership is the most efficient framework for securing research execution to support the ambitions of Soitec, and CEA-Leti teams are committed to its success.”

The penetration of gallium nitride-on-silicon (GaN-on-Si) wafers into the light-emitting diode (LED) market is forecast to increase at a compound annual growth rate (CAGR) of 69 percent from 2013 to 2020, by which time they will account for 40 percent of all GaN LEDs manufactured, according to a new report from IHS Inc.

In 2013, 95 percent of GaN LEDs will be manufactured on sapphire wafers, while only 1 percent will be manufactured on silicon wafers. The growth in the manufacturing of GaN-on-Si LEDs between 2013 and 2020 will take market share from both sapphire and silicon carbide wafers.

The figure below shows the GaN-on-Si LED market share outlook in terms of revenue for the packaged LED market.

Screen Shot 2013-12-12 at 3.56.00 PM

“Manufacturing large ingots made from sapphire is difficult, whereas silicon wafers are available from 8 inches up to 12 inches and are generally cheaper and more abundant,” said Dkins Cho, senior analyst for lighting and LEDs at IHS. “There is a large pre-existing industry for silicon-based manufacturing that is leveraged to create economies of scale and reduce the cost of an LED.”

Repurposing manufacturing facilities to accommodate the shift toward GaN-on-Si LEDs is generally accepted to require minimal investment. Companies that previously manufactured CMOS semiconductors already own legacy 8-inch CMOS fabrication units that can be converted for LED production with a small modification. These companies already have in-house expertise and technology associated with silicon-based processes.

“Many of the CMOS semiconductor manufacturers already have excellent inspection tools, unlike traditional LED companies,” Cho said. “This could help increase their process yield through in-situ monitoring. However, it is unlikely the repurposing will happen overnight; instead we forecast a shift during the coming years.”

Soitec and Intelligent Epitaxy Technology, Inc., a provider of indium phosphide (InP), gallium arsenide (GaAs), and gallium antimonide (GaSb) epitaxial wafers, have signed a collaborative agreement to better serve the GaAs market.

This partnership aims at addressing the market requirements for a reliable second source. The agreement includes a technology license granted by Soitec to IntelliEPI, which may be extended to address future business opportunities in the GaAs market, including equipment transfer.

“We are delighted to announce the license of our technology leading to a second source for our products for our key GaAs customers,” said Bernard Aspar, Senior Vice President and Soitec’s Communication & Power Business Unit General Manager.

“This collaborative agreement will reinforce our GaAs technology and product know-how while, at the same time, offering Soitec’s customers supply-chain security,” said Yung-Chung Kao, IntelliEPI President and CEO.

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V semiconductor, and is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors including InGaAs and GaInNAs.

Compiled by Shannon Davis, Web Editor

This week, industry leaders and experts have gathered in Washington D.C. at the 59th annual IEEE International Electron Device Meeting (IEDM) conference. The IEDM presents more leading work in more areas of the field than any other technical conference, encompassing silicon and non-silicon device technology, molecular electronics, nanotechnology, optoelectronics, MEM/NEMS, energy-related devices and bioelectronics. The 59th annual IEDM conference includes a strong overall emphasis on circuit-device interaction, advanced semiconductor manufacturing, and biomedical devices.

Solid State Technology‘s Pete Singer is on site all week, and we will be getting insight from bloggers and industry partners. Browse our slideshow of highlights from abstracts being presented this week.

Click here to start slideshow

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SEMI today announced a “Call for Papers” for the new Semiconductor Technology Symposium, the popular TechXPOT programs, and a new Science Park program featuring university research and advanced R&D subjects at SEMICON West, North America’s premier microelectronics event, to be held July 8-10 at the Moscone Center in San Francisco, Calif.  Presentation abstracts are due March 17, 2014.

SEMICON West 2014 will be attended by nearly 30,000 semiconductor and related microelectronics industry professionals and feature more than 60 hours of technical sessions, led by the most informed and influential experts in the world. The “standing-room only” success of the SEMICON West TechXPOT programs has prompted the creation of the new Semiconductor Technology Symposium (STS). Beginning in 2014, popular programs on leading-edge chip manufacturing will be held in a classroom setting with reserved seating adjacent to the show floor in the North Hall of Moscone Center. STS will offer technology trends, developments and new technology information in the areas of advanced materials and processing, lithography, metrology, 450mm, advanced packaging, 3D-IC.  Test Vision 2020, the leading semiconductor test conference focusing on ATE and high-volume manufacturing, will join the STS in the Moscone Center location.

TechXPOT programs in the Moscone Center North and South Halls will continue focusing on special topics in semiconductor manufacturing, and adjacent and related microelectronics technologies. An additional new program, Science Park, will feature a dedicated stage and exhibition area featuring advanced research and development technology topics centered on universities, research consortia, and R&D tools and technologies.

For the Semiconductor Technology Symposium, SEMI is soliciting technical presentations in the following areas:

·         Manufacturing nonplanar transistors
·         New and advanced metrology solutions
·         Advanced lithography
·         450mm wafer processing
·         Advanced materials and processes
·         Advanced packaging
·         Trends and technologies in 3D stacked IC
·         Semiconductor test
For TechXPOT sessions in North and South Hall of the Moscone Center, SEMI is soliciting technical presentations in the following areas:

·         Semiconductor test
·         Advanced packaging
·         Productivity solutions for 200mm and 300mm wafer processing
·         Accelerating and improving yield
·         MEMS manufacturing and technology
·         Enabling the Internet of Things
·         Manufacturing advanced power semiconductors
·         Printed and flexible electronics
The new Science Park program is soliciting technical presentations from universities and research consortia on advanced R&D topics, and tools and technology solutions for laboratory, research and pilot line microelectronics technology and manufacturing.
“The semiconductor programs at SEMICON West have grown to become one of the industry’s most unique and anticipated events, but have outgrown the TechXPOT locations on the show floor,” said Karen Savala, president of SEMI Americas. “The new Semiconductor Technology Symposium will allow us to improve and expand these programs with a high-quality classroom setting, convenient lunch and networking opportunities — providing an ideal setting and a better value for our attendees.”

Prospective presenters are invited to submit abstracts (maximum 500 words) on key industry issues and topics in the areas listed above for consideration. Presentations should focus on the latest developments and innovations in these technology areas, inclusive of supporting data. Submissions may be made online from the SEMICON West 2014 “Call for Participants” website at: www.semiconwest.org/Participate/SPCFP.

The deadline for abstract submission is March 17, 2014.

EV Group (EVG), a supplier of wafer bonding and lithography equipment for the MEMS, nanotechnology and semiconductor markets, today announced that the Singapore-MIT Alliance for Research Technology (SMART) has ordered an EVG 850LT fully automated production bonding system designed for silicon-on-insulator (SOI) and direct wafer bonding using low-temp plasma activation processing.  SMART, which is a leading research center established by the Massachusetts Institute of Technology (MIT) in partnership with the National Research Foundation of Singapore, will utilize the EVG850LT system to support its advanced substrate development efforts.

The MIT research center is located outside the United States in Singapore and has five different research groups, including the Low Energy Electronic Systems (LEES) Research Group, which focuses on integrating silicon CMOS and compound semiconductor materials to enable new integrated circuits (ICs) for wireless devices, power electronics, LEDs, displays and other applications.  The LEES Research Group features a fabrication facility, where the EVG850LT has already been installed and is in use.

According to Professor Eugene Fitzgerald from MIT’s Department of Materials Science and Engineering, SMART chose the EVG850LT for the center’s advanced R&D efforts due to the system’s high process flexibility and performance, EVG’s experience in low-temperature bonding, and expertise and support in process development.

“The charter of our LEES Research Group is to identify new IC technologies that enable devices that consume less power, enable higher performance and open up new applications for information systems.  EV Group’s technology and expertise will play an important role in supporting this effort,” stated Professor Fitzgerald.

The EVG850 platform, upon which the EVG850LT system is built, is the only SOI and direct wafer bonding platform designed to operate in high-throughput, high-yield environments—establishing it as the industry standard in the SOI wafer bonding market.  The EVG850LT platform combines all essential steps for wafer bonding—from cleaning and alignment to pre-bonding and IR-inspection—in a single platform.  This ensures an ultra-clean production process throughout all stages to enable high-yield, void-free wafers, as opposed to stand-alone processing units that require the wafers to be manually transported in a regular cleanroom environment.  The EVG850 supports a variety of advanced substrates, including SOI and silicon on lattice engineered substrate (SOLES) technology, up to 300mm in diameter.