Category Archives: Packaging Materials

One of the leading challenges for autonomous vehicles is to ensure that they can detect and sense objects–even through dense fog. Compared to the current visible light-based cameras, infrared cameras can offer much better visibility through the fog, smoke or tiny particles that can scatter the visible light.

Artist’s rendering of light interacting with BaTiS3 crystals. Credit: Talia Spencer

Within the air, infrared light –within a specific range called mid-wave infrared– scatter much less compared to other visible or other infrared light waves. Infrared cameras can also see more effectively in the dark, when there is no visible light. However, currently the deployment of infrared cameras is limited by their heavy cost and scarcity of effective materials. This is where materials, which possess unique optical properties in the infrared and can be scalable, might make a difference in providing better object identification in several technologies including autonomous vehicles.

A new material developed by scientists at the USC Viterbi School of Engineering and the University of Wisconsin along with researchers from Air Force Research Laboratories, University of Missouri, and J.A. Woollam Co. Inc, might show promise for such infrared detection applications as autonomous vehicles, emergency services and even manufacturing.

The research group of Jayakanth Ravichandran, an assistant professor of materials sciences at the USC Viterbi School of Engineering has been studying a new class of materials called chalcogenide perovskites. Among these materials is Barium titanium sulfide (BTS), a material rediscovered and prepared in large crystal form by Shanyuan Niu, a doctoral candidate in the Materials Science program at the USC Mork Family Department of Chemical Engineering and Materials Science. Ravichandran’s research group collaborated with the research groups of Mikhail Kats, an assistant professor of electrical and computer engineering at University of Wisconsin-Madison and Han Wang, an assistant professor of electrical engineering and electrophysics in USC’s Ming Hsieh Department of Electrical Engineering to study how infrared light interacts with this material. These researchers discovered that this material interacted differently with light in two different directions.

“This is a significant breakthrough, which can affect many infrared applications,” says Ravichandran.

This direction dependent interaction with light is characterized by an optical property called birefringence. In simple terms, birefringence can be viewed as light moving at different speeds in two directions in a material. Much like sunglasses with polarized lenses block glare, BTS has the ability to block or slow down light depending on the direction in which it travels in the material. The researchers maintain that their material, barium titanium sulfide, has the highest birefringence among known crystals.

“The birefringence is larger than that of any known solid material, and it has low losses across the important long-wave infrared spectrum,” says Kats.

How BTS could improve infrared vision:

The BTS material can be used to construct a sensor to filter out certain polarizations of light to achieve better contrast of the image. It could also help filter light coming from different directions to enable sensing of a remote object’s features. This could be particularly important for improving infrared vision used in autonomous vehicles, which need to see the entire landscape around them even in low visibility conditions.

“The hope is that in the future, a BTS-enhanced sensor in a car would function as retinas do to the human body,” says Niu.

The authors believe these infrared-responsive materials can extend human perception. Beyond autonomous vehicles, there are other possible heat sensing or temperature measurement applications. One application could be in the creation of imaging tools used by firefighters to generate an instant temperature map outside a burning building to assess where a fire is spreading and where emergency responders need to rescue trapped individuals.

At present, the cost of infrared equipment makes it too expensive for all fire stations to have such equipment. BTS, which is made of elements readily abundant in earth crust–could make infrared equipment more affordable and effective. In addition, such materials are safer for the user and the environment, as well as easier to dispose of than the materials that are used now, which contain hazardous elements such as mercury and cadmium.

These materials could also be useful in devices that sense harmful molecules, gases, even biological systems. The applications range from heat sensing, pollution monitoring to medicine.

“To date, the constraint of existing mid-IR materials is a big bottleneck to translate many of these technologies,” says USC’s Wang.

The researchers hope that intense research in this area will make several of these technologies a reality in the near future.

The research on BTS is documented in “Giant optical anisotropy in a quasi-1D crystal” featured in Nature Photonics.

pSemi™ Corporation (formerly known as Peregrine Semiconductor), a Murata company focused on semiconductor integration, announces the availability of the PE29101 gallium nitride (GaN) field-effect transistor (FET) driver for solid-state light detection and ranging (LiDAR) systems. The PE29101 boasts the industry’s fastest rise times and a low minimum pulse width. This high-speed driver enables design engineers to extract the full performance and switching speed advantages from GaN transistors. In solid-state LiDAR systems, faster switching translates into improved resolution and accuracy in the LiDAR image.

“As GaN is proving its relevance in applications like solid-state LiDAR, design engineers are using pSemi high-speed drivers to maximize the fast switching benefits of GaN,” says Jim Cable, chief technology officer of pSemi. “Because of its rise and fall speed, the PE29101 enables the highest possible resolution imagery—something the industry needs for LiDAR to reach its fullest potential.”

LiDAR operates on the same principles as radar but instead uses pulsed lasers to precisely map surrounding areas. Traditionally used in high-resolution mapping, LiDAR is now used in advanced-driver assistance programs (ADAS) and is widely seen as an enabling technology to fully autonomous vehicles. Furthermore, solid-state LiDAR has emerged as the future leader in the commercialization of LiDAR systems, largely due to its affordability, reliability and compact size compared to mechanical sensors.

In LiDAR systems, the pulse laser’s switching speed and rise time directly impacts the measurement’s accuracy. To improve resolution, the current must switch as quickly as possible through the laser diode. GaN technology offers LiDAR systems superior resolution and a faster response time because of its very low input capacitance and its ability to switch significantly faster than metal-oxide semiconductor field-effect transistors (MOSFETs).

GaN FETs must be controlled by a very fast driver to maximize their fast-switching potential. Increasing the switching speed requires a driver with fast rise times and a low minimum output pulse width. The PE29101 offers these key performance specifications, enabling GaN technology to improve LiDAR resolution.

WIN Semiconductors Corp (TPEx:3105), the world’s largest pure-play compound semiconductor foundry, has expanded its portfolio of highly integrated GaAs technologies with the release of a new pHEMT technology. The PIH0-03 platform incorporates monolithic PIN and vertical Schottky diodes with WIN’s high performance 0.1um pseudomorphic HEMT process, PP10. This integrated technology, PIH0-03, adds a highly linear vertical Schottky diode with cut-off frequency over 600GHz, as well as multi-function PIN diodes while preserving the state-of-the-art mmWave performance of the PP10 technology. The availability of monolithic PIN and Schottky diodes with a high performance mmWave transistor enables on-chip integration of a wide range of functions, including mixers, temperature/power detecting, limiters, and high frequency switching, and supports power, low noise and optical applications through100 GHz.

This integrated technology provides users with multiple pathways to add on-chip functionality and reduce the overall die count of complex multi-chip modules used in a variety of end-markets. In addition to high frequency switching, the monolithic PIN diodes can be used for low parasitic capacitance ESD protection circuits, and as an on-chip power limiter to protect sensitive LNAs in phased array radars. The vertical Schottky diodes enable numerous detecting and mixing functions and can be combined with the PIN diodes in unique limiter applications.

“Today’s complex systems and highly competitive markets require increased mmWave performance and more functionality per chip. The PIH0-03 platform is the latest example of how WIN Semiconductors is addressing these critical market needs by offering high performance GaAs technologies with new levels of multifunction integration. To meet the ever-increasing demands of next generation mobile user equipment, wireless infrastructure, fiber optics and military applications, WIN Semiconductors continues to commercialize advanced, highly integrated GaAs solutions and provide our customers a clear technology advantage,” said David Danzilio, Senior Vice President of WIN Semiconductors Corp.

Semiconductors N.V. (NASDAQ:NXPI) has expanded its cellular infrastructure portfolio of GaN and silicon laterally diffused metal oxide semiconductor (Si-LDMOS) products that deliver industry leading performance in a compact footprint to enable next-generation 5G cellular networks.

Spectrum expansion, higher order modulation, carrier aggregation, full dimension beam forming, and other enablers of 5G connectivity will require an expanded base of technologies to support enhanced mobile broadband connectivity. With spectrum usage and network footprints, multiple-input, multiple output (MIMO) technologies from four transmit (4TX) antennas to 64 TX and higher will be employed. The future of 5G networks will depend on GaN and Si-LDMOS technologies and NXP is at the forefront in its RF power amplifier development.

“Building on the success of 25 years of LDMOS leadership — NXP released the world’s first LDMOS product in 1992 — today, we are extending our RF leadership with industry leading GaN technology, developed with the highest linear efficiency for cellular applications,” said Paul Hart, senior vice president and general manager of NXP’s RF Power business. “Backed with the best supply chain, global applications support and unparalleled design expertise in the industry, NXP is positioned to be the leading RF partner for 5G solutions.”

At IMS 2018, NXP is introducing new RF GaN wideband power transistors and expanding its Airfast third-generation Si-LDMOS portfolio of macro and outdoor small cell solutions. The new offerings include:

  • A3G22H400-04S: Ideally suited for 40 W base stations, this GaN product yields up to 56.5 percent efficiency and 15.4 dB of gain and covers cellular bands from 1800 MHz to 2200 MHz.
  • A3G35H100-04S: Providing 43.8 percent efficiency and 14 dB of gain, this GaN product enables 16 TX MIMO solutions at 3.5 GHz.
  • A3T18H400W23S: This Si-LDMOS product is leading the way to 5G at 1.8 GHz with Doherty efficiency up to 53.4 percent and gain of 17.1 dB.
  • A3T21H456W23S: Covering the full 90 MHz band from 2.11 GHz to 2.2 GHz, this solution exemplifies NXP’s best-in-class Si-LDMOS performance for efficiency, RF power and signal bandwidth.
  • A3I20D040WN: Within NXP’s family of integrated ultra-wideband LDMOS products, this solution offers peak power of 46.5 dBm with 365 MHz wideband class AB performance of 32 dB of gain, 18 percent efficiency at 10 dB OBO.
  • A2I09VD030N: This offering boasts peak power of 46 dBm with class AB performance of 34.5 dB gain, 20 percent efficiency at 10 dB OBO. The RF bandwidth for this product is 575 MHz to 960 MHz.

The breadth of the company’s RF Power technologies—which include GaN, silicon-LDMOS, SiGe, and GaAs—allows product options for 5G that span frequency and power spectrums with varying levels of integration. This wide array of options, combined with the products that NXP builds for digital computing, and baseband processing, makes NXP a unique supplier of end-to-end 5G solutions.

To learn more, visit NXP at the International Microwave Symposium (IMS 2018) June 10-15 at booth #739 or at www.nxp.com/RF.

Entegris, Inc. (NASDAQ: ENTG), a distributor of specialty chemicals and advanced materials solutions, announced today it has entered into a definitive agreement to acquire the SAES Pure Gas business, from SAES Getters S.p.A. (“SAES Group”), an advanced functional materials company headquartered in Milan, Italy. The SAES Pure Gas business, a provider of high-capacity gas purification systems used in semiconductor manufacturing and adjacent markets is based in San Luis Obispo, California and will report into the Microcontamination Control division of Entegris. Under the agreement, Entegris will purchase the shares and assets which comprise the SAES Pure Gas business for approximately $355 million, subject to customary purchase price adjustments.

Materials purity plays an increasingly critical role in the performance and reliability of advanced semiconductors as the sensitivity to contamination approaches the parts per quadrillion level. Advanced memory devices require significantly higher gas consumption per processed wafer to support shrinking geometries and multi-layer device architectures. As a result of this heightened sensitivity to molecular contamination and increased gas consumption, semiconductor manufacturers are depending on bulk gas suppliers to deliver process gases that meet new purity requirements.

“With this acquisition, our customers will benefit from a complete portfolio of gas purifications solutions for both bulk and specialty gases,” said Bertrand Loy, president and Chief Executive Officer of Entegris. “We are excited about the value this transaction will create, as it demonstrates our strategy of augmenting our organic growth with high-value acquisitions that leverage our global business platform and broaden our technology portfolio.”

“As we executed our evolutionary strategy for SAES Group and considered potential acquirers for the SAES Pure Gas business, we viewed Entegris as the ideal partner given its leadership in the semiconductor industry, the complementary nature of its filtration and purification offerings, and its financial and operational strengths,” said Massimo della Porta, president of SAES Getters S.p.A.

According to a recent press release issued by SAES Group, the SAES Pure Gas business recorded revenues of €81 million, or $91.5 million, and an adjusted EBITDA of €29.3 million, or $33.1 million, for its fiscal year ended December 31, 2017 and revenues of €25.5 million, or $31 million, and an adjusted EBITDA of €7.8 million, or $9.6 million, for the first quarter of 2018. Entegris intends to fund the acquisition from its available cash and expects that the transaction will be immediately accretive.

The closing of the transaction is subject to the completion of a pre-closing restructuring of certain of SAES Group’s US legal entities and other customary closing conditions. The transaction is expected to close in the next two to four weeks.

Researchers at Oregon State University are looking at a highly durable organic pigment, used by humans in artwork for hundreds of years, as a promising possibility as a semiconductor material.

Findings suggest it could become a sustainable, low-cost, easily fabricated alternative to silicon in electronic or optoelectronic applications where the high-performance capabilities of silicon aren’t required.

Optoelectronics is technology working with the combined use of light and electronics, such as solar cells, and the pigment being studied is xylindein.

“Xylindein is pretty, but can it also be useful? How much can we squeeze out of it?” said Oregon State University physicist Oksana Ostroverkhova. “It functions as an electronic material but not a great one, but there’s optimism we can make it better.”

Xylindien is secreted by two wood-eating fungi in the Chlorociboria genus. Any wood that’s infected by the fungi is stained a blue-green color, and artisans have prized xylindein-affected wood for centuries.

The pigment is so stable that decorative products made half a millennium ago still exhibit its distinctive hue. It holds up against prolonged exposure to heat, ultraviolet light and electrical stress.

“If we can learn the secret for why those fungi-produced pigments are so stable, we could solve a problem that exists with organic electronics,” Ostroverkhova said. “Also, many organic electronic materials are too expensive to produce, so we’re looking to do something inexpensively in an ecologically friendly way that’s good for the economy.”

With current fabrication techniques, xylindein tends to form non-uniform films with a porous, irregular, “rocky” structure.

“There’s a lot of performance variation,” she said. “You can tinker with it in the lab, but you can’t really make a technologically relevant device out of it on a large scale. But we found a way to make it more easily processed and to get a decent film quality.”

Ostroverkhova and collaborators in OSU’s colleges of Science and Forestry blended xylindein with a transparent, non-conductive polymer, poly(methyl methacrylate), abbreviated to PMMA and sometimes known as acrylic glass. They drop-cast solutions both of pristine xylindein and a xlyindein-PMMA blend onto electrodes on a glass substrate for testing.

They found the non-conducting polymer greatly improved the film structure without a detrimental effect on xylindein’s electrical properties. And the blended films actually showed better photosensitivity.

“Exactly why that happened, and its potential value in solar cells, is something we’ll be investigating in future research,” Ostroverkhova said. “We’ll also look into replacing the polymer with a natural product – something sustainable made from cellulose. We could grow the pigment from the cellulose and be able to make a device that’s all ready to go.

“Xylindein will never beat silicon, but for many applications, it doesn’t need to beat silicon,” she said. “It could work well for depositing onto large, flexible substrates, like for making wearable electronics.”

This research, whose findings were recently published in MRS Advances, represents the first use of a fungus-produced material in a thin-film electrical device.

“And there are a lot more of the materials,” Ostroverkhova said. “This is just first one we’ve explored. It could be the beginning of a whole new class of organic electronic materials.”

Applied Materials, Inc. today announced a breakthrough in materials engineering that accelerates chip performance in the big data and AI era.

In the past, classic Moore’s Law scaling of a small number of easy-to-integrate materials simultaneously improved chip performance, power and area/cost (PPAC). Today, materials such as tungsten and copper are no longer scalable beyond the 10nm foundry node because their electrical performance has reached physical limits for transistor contacts and local interconnects. This has created a major bottleneck in achieving the full performance potential of FinFET transistors. Cobalt removes this bottleneck but also requires a change in process system strategy. As the industry scales structures to extreme dimensions, the materials behave differently and must be systematically engineered at the atomic scale, often under vacuum.

To enable the use of cobalt as a new conducting material in the transistor contact and interconnect, Applied has combined several materials engineering steps – pre-clean, PVD, ALD and CVD – on the Endura® platform. Moreover, Applied has defined an integrated cobalt suite that includes anneal on the Producer® platform, planarization on the Reflexion® LK Prime CMP platform and e-beam inspection on the PROVision™ platform. Customers can use this proven, Integrated Materials Solution to speed time-to-market and increase chip performance at the 7nm foundry node and beyond.

“Five years ago, Applied anticipated an inflection in the transistor contact and interconnect, and we began developing an alternative materials solution that could take us beyond the 10nm node,” said Dr. Prabu Raja, senior vice president of Applied’s Semiconductor Products Group. “Applied brought together its experts in chemistry, physics, engineering and data science to explore the broad portfolio of Applied’s technologies and create a breakthrough Integrated Materials Solution for the industry. As we enter the big data and AI era, there will be more of these inflections, and we are excited to be having earlier and deeper collaborations with our customers to accelerate their roadmaps and enable devices we never dreamed possible.”

While challenging to integrate, cobalt brings significant benefits to chips and chip making: lower resistance and variability at small dimensions; improved gapfill at very fine dimensions; and improved reliability. Applied’s integrated cobalt suite is now shipping to foundry/logic customers worldwide.

Applied Materials, Inc. (Nasdaq:AMAT) is a leader in materials engineering solutions used to produce virtually every new chip and advanced display in the world.

Physicists developed a way to determine the electronic properties of thin gold films after they interact with light. Nature Communications published the new method, which adds to the understanding of the fundamental laws that govern the interaction of electrons and light.

“Surprisingly, up to now there have been very limited ways of determining what exactly happens with materials after we shine light on them,” says Hayk Harutyunyan, an assistant professor of physics at Emory University and lead author of the research. “Our finding may pave the way for improvements in devices such as optical sensors and photovoltaic cells.”

From solar panels to cameras and cell phones — to seeing with our eyes — the interaction of photons of light with atoms and electrons is ubiquitous. “Optical phenomenon is such a fundamental process that we take it for granted, and yet it’s not fully understood how light interacts with materials,” Harutyunyan says.

One obstacle to understanding the details of these interactions is their complexity. When the energy of a light photon is transferred to an electron in a light-absorbing material, the photon is destroyed and the electron is excited from one level to another. But so many photons, atoms and electrons are involved — and the process happens so quickly — that laboratory modeling of the process is computationally challenging.

For the Nature Communications paper, the physicists started with a relatively simple material system — ultra-thin gold layers — and conducted experiments on it.

“We did not use brute computational power,” Harutyunyan says. “We started with experimental data and developed an analytical and theoretical model that allowed us to use pen and paper to decode the data.”

Harutyunyan and Manoj Manjare, a post-doctoral fellow in his lab, designed and conducted the experiments. Stephen Gray, Gary Wiederrecht and Tal Heipern — from the Argonne National Laboratory — came up with the mathematical tools needed. The Argonne physicists also worked on the theoretical model, along with Alexander Govorov from Ohio University.

For the experiments, the nanolayers of gold were positioned at particular angles. Light was then shined on the gold in two, sequential pulses. “These laser light pulses were very short in time — thousands of billions of times shorter than a second,” Harutyunyan says. “The first pulse was absorbed by the gold. The second pulse of light measured the results of that absorption, showing how the electrons changed from a ground to excited state.”

Typically, gold absorbs light at green frequencies, reflecting all the other colors of the spectrum, which makes the metal appear yellow. In the form of nanolayers, however, gold can absorb light at longer wave lengths, in the infrared part of the spectrum.

“At a certain excitation angle, we were able to induce electronic transitions that were not just a different frequency but a different physical process,” Harutyunyan says. “We were able to track the evolution of that process over time and demonstrate why and how those transitions happen.”

Using the method to better understand the interactions underlying light absorption by a material may lead to ways to tune and manage these interactions.

Photovoltaic solar energy cells, for instance, are currently only capable of absorbing a small percentage of the light that hits them. Optical sensors used in biomedicine and photo catalysts used in chemistry are other examples of devices that could potentially be improved by the new method.

While the Nature Communications paper offers proof of concept, the researchers plan to continue to refine the method’s use with gold while also experimenting with a range of other materials.

“Ultimately, we want to demonstrate that this is a broad method that could be applied to many useful materials,” Harutyunyan says.

Exagan, an innovator of gallium nitride (GaN) semiconductor technology enabling smaller and more efficient electrical converters, is accelerating the transition to greater power efficiency by launching its safe, powerful G-FET™ power transistors and G-DRIVE™ intelligent fast-switching solution, featuring an integrated driver and transistor in a single package. These GaN-based devices are easy to design into electronic products, paving the way for fast chargers that comply with the USB power delivery (PD) 3.0 type C standard while providing exceptional power performance and integration.

At this week’s PCIM Europe conference in Nuremberg, Exagan is showcasing the use of its high-power-density GaN-on-silicon semiconductors to create ultra-fast, efficient and smaller 45- to 65-watt chargers. The company’s exhibit demonstrates its electrical-converter expertise and how both G-FET and G-DRIVE can benefit new converter product designs and their applications.

“The market potential for our products is enormous including all portable electronic devices as well as homes, restaurants, hotels, airports, automobiles and more,” said Frédéric Dupont, president and CEO of Exagan. “In the near future, users will be able to quickly charge their smart phones, tablets, laptops and other devices simply by plugging a standard USB cable into a small, generic mobile charger.”

The ability of USB type C ports to serve as universal connections for the simultaneous transfer of electrical power, data and video is leading to tremendous growth. The number of devices with at least one USB type C port is forecasted to multiply from 300 million units in 2016 to nearly five billion by 2021, according to market research firm IHS Markit.

Exagan is working to accelerate the adoption of cost-effective GaN-based solutions for the charger market. The company uses 200-mm GaN-on-silicon wafers in its fabrication process, achieving highly cost efficient high-volume manufacturing.  Exagan is now sampling its fast, energy-efficient devices to key customers while ramping up production to begin volume shipments of G-FET and G-DRIVE products.

A new way of enhancing the interactions between light and matter, developed by researchers at MIT and Israel’s Technion, could someday lead to more efficient solar cells that collect a wider range of light wavelengths, and new kinds of lasers and light-emitting diodes (LEDs) that could have fully tunable color emissions.

The fundamental principle behind the new approach is a way to get the momentum of light particles, called photons, to more closely match that of electrons, which is normally many orders of magnitude greater. Because of the huge disparity in momentum, these particles usually interact very weakly; bringing their momenta closer together enables much greater control over their interactions, which could enable new kinds of basic research on these processes as well as a host of new applications, the researchers say.

The new findings, based on a theoretical study, are being published today in the journal Nature Photonics in a paper by Yaniv Kurman of Technion (the Israel Institute of Technology, in Haifa); MIT graduate student Nicholas Rivera; MIT postdoc Thomas Christensen; John Joannopoulos, the Francis Wright Davis Professor of Physics at MIT; Marin Soljacic, professor of physics at MIT; Ido Kaminer, a professor of physics at Technion and former MIT postdoc; and Shai Tsesses and Meir Orenstein at Technion.

While silicon is a hugely important substance as the basis for most present-day electronics, it is not well-suited for applications that involve light, such as LEDs and solar cells — even though it is currently the principal material used for solar cells despite its low efficiency, Kaminer says. Improving the interactions of light with an important electronics material such as silicon could be an important milestone toward integrating photonics — devices based on manipulation of light waves — with electronic semiconductor chips.

Most people looking into this problem have focused on the silicon itself, Kaminer says, but “this approach is very different — we’re trying to change the light instead of changing the silicon.” Kurman adds that “people design the matter in light-matter interactions, but they don’t think about designing the light side.”

One way to do that is by slowing down, or shrinking, the light enough to drastically lower the momentum of its individual photons, to get them closer to that of the electrons. In their theoretical study, the researchers showed that light could be slowed by a factor of a thousand by passing it through a kind of multilayered thin-film material overlaid with a layer of graphene. The layered material, made of gallium arsenide and indium gallium arsenide layers, alters the behavior of photons passing through it in a highly controllable way. This enables the researchers to control the frequency of emissions from the material by as much as 20 to 30 percent, says Kurman, who is the paper’s lead author.

The interaction of a photon with a pair of oppositely charged particles — such as an electron and its corresponding “hole” — produces a quasiparticle called a plasmon, or a plasmon-polariton, which is a kind of oscillation that takes place in an exotic material such as the two-dimensional layered devices used in this research. Such materials “support elastic oscillations on its surface, really tightly confined” within the material, Rivera says. This process effectively shrinks the wavelengths of light by orders of magnitude, he says, bringing it down “almost to the atomic scale.”

Because of that shrinkage, the light can then be absorbed by the semiconductor, or emitted by it, he says. In the graphene-based material, these properties can actually be controlled directly by simply varying a voltage applied to the graphene layer. In that way, “we can totally control the properties of the light, not just measure it,” Kurman says.

Although the work is still at an early and theoretical stage, the researchers say that in principle this approach could lead to new kinds of solar cells capable of absorbing a wider range of light wavelengths, which would make the devices more efficient at converting sunlight to electricity. It could also lead to light-producing devices, such as lasers and LEDs, that could be tuned electronically to produce a wide range of colors. “This has a measure of tunability that’s beyond what is currently available,” Kaminer says.

“The work is very general,” Kurman says, so the results should apply to many more cases than the specific ones used in this study. “We could use several other semiconductor materials, and some other light-matter polaritons.” While this work was not done with silicon, it should be possible to apply the same principles to silicon-based devices, the team says. “By closing the momentum gap, we could introduce silicon into this world” of plasmon-based devices, Kurman says.

Because the findings are so new, Rivera says, it “should enable a lot of functionality we don’t even know about yet.”