Category Archives: Materials

RF power semiconductors for wireless infrastructure (for <4GHz and >3W) was over a US$1 billion business for 2018. The segment was essentially revenue flat, but Gallium Nitride (GaN) continues to make inroads into this segment.

“Gallium Nitride should continue to gain share over the next few years,” noted ABI Research Director Lance Wilson. “It bridges the gap between two older technologies, exhibiting the high-frequency performance of Gallium Arsenide combined with the power handling capabilities of Silicon LDMOS. It is now a mainstream technology which has achieved measurable market share and, in the future, will capture a significant part of the market.”

The wireless infrastructure sub-segment while representing about two-thirds of total RF power device sales has been anemic recently but is still holding its own.

The eventual deployment of 5G also offers an upside for the wireless Infrastructure segment. The main issue is one of timing on a large-scale rollout. Wilson also added, “the business environment for the RF power semiconductor device business has become more complex with potential trade tariffs, merger and acquisition troubles and other similar issues clouding the market”.

These findings are from ABI Research’s RF Power Semiconductor Devices for Mobile Wireless Infrastructure report. These reports are part of the company’s 5G & Mobile Network Infrastructureresearch service, which includes research, data, and Executive Foresights.

Cabot Microelectronics Corporation (Nasdaq: CCMP), a supplier of chemical mechanical planarization (CMP) polishing slurries and second largest CMP pads supplier to the semiconductor industry, and KMG Chemicals, Inc. (NYSE: KMG), a global provider of specialty chemicals and performance materials, have entered into a definitive agreement under which Cabot Microelectronics will acquire KMG in a cash and stock transaction with a total enterprise value of approximately $1.6 billion. Under the terms of the agreement, KMG shareholders will be entitled to receive, per KMG share, $55.65 in cash and 0.2000 of a share of Cabot Microelectronics common stock, which represents an implied per share value of $79.50 based on the volume weighted average closing price of Cabot Microelectronics common stock over the 20-day trading period ended on August 13, 2018.  The transaction has been unanimously approved by the Boards of Directors of both companies and is expected to close near the end of calendar year 2018.

The combined company is expected to have annual revenues of approximately $1 billion and approximately $320 million in EBITDA, including synergies, extending and strengthening Cabot Microelectronics’ position as one of the leading suppliers of consumable materials to the semiconductor industry.  Additionally, the combined company will be a leading global provider of performance products and services for improving pipeline operations and optimizing throughput.

“We are excited about the combination of two world-class organizations with dedicated and talented employees that provide innovative, high quality solutions to solve our customers’ most demanding challenges,” said David Li, President and CEO of Cabot Microelectronics. “KMG’s industry-leading electronic materials business is highly complementary to our CMP product portfolio, while its performance materials business broadens our product offerings into the fast-growing industry for pipeline performance products and services.  We welcome KMG’s employees to our team and look forward to our future together as one company.”

Chris Fraser, KMG Chairman and CEO, said, “This is an outstanding combination, bringing together two leading companies that will benefit from increased size, scale and geographic reach. For KMG shareholders, this transaction creates significant and immediate value while also providing participation in the future growth of the combined company.  Thanks to the dedication and hard work of KMG employees around the world, KMG has achieved significant progress over the past several years, and I am confident that Cabot Microelectronics will continue to build on this success to further enhance value for our shareholders.”

SEMI today announced that all legal requirements have been met for the ESD (Electronic Systems Design) Alliance to become a SEMI Strategic Association Partner.

Full integration of the Redwood City, California-based association representing the semiconductor design ecosystem is expected to be complete by the end of 2018. The integration will extend ESD Alliance’s global reach in the electronics manufacturing supply chain and strengthen engagement and collaboration between the semiconductor design and manufacturing communities worldwide.

As a SEMI Strategic Association Partner, the ESD Alliance will retain its own governance and continue its mission to represent and support companies in the semiconductor design ecosystem.

The ESD Alliance will lead its strategic goals and objectives as part of SEMI, leveraging SEMI’s robust global resources including seven regional offices, expositions and conferences, technology communities and activities in areas such as advocacy, international standards, environment, health and safety (EH&S) and market statistics.

With the integration, SEMI adds the design segment to its electronics manufacturing supply chain scope, connecting the full ecosystem. The integration is a key step in streamlining SEMI members’ collaboration and connection with the electronic system design, IP and fabless communities. The Strategic Association Partnership will also enhance collaboration and innovation across the collective SEMI membership as ESD Alliance members bring key capabilities to SEMI’s vertical application platforms such as Smart Transportation, Smart Manufacturing and Smart Data as well as applications including AI and Machine Learning.

“The addition of ESD Alliance as a SEMI Strategic Association Partner is a milestone in our mission to drive new efficiencies across the full global electronics design and manufacturing supply chain for greater collaboration and innovation,” said Ajit Manocha, president and CEO of SEMI. “This partnership provides opportunities for all SEMI members for accelerated growth and new business opportunities in end-market applications. We welcome ESD Alliance members to the SEMI family.”

“Our members are excited about becoming part of SEMI’s broad community that spans the electronics manufacturing supply chain,” said Bob Smith, executive director of the ESD Alliance. “Global collaboration between design and manufacturing is a requirement for success with today’s complex electronic products. Our new role at SEMI will help develop and strengthen the connections between the design and manufacturing communities.”

All ESD Alliance member companies, including global leaders ARM, Cadence, Mentor, a Siemens business, and Synopsys, will join SEMI’s global membership of more than 2,000 companies while retaining ESD Alliance’s distinct self-governed community within SEMI.

The general public might think of the 21st century as an era of revolutionary technological platforms, such as smartphones or social media. But for many scientists, this century is the era of another type of platform: two-dimensional materials, and their unexpected secrets.

When two monolayers of WTe2 are stacked into a bilayer, a spontaneous electrical polarization appears, one layer becoming positively charged and the other negatively charged. This polarization can be flipped by applying an electric field. Credit: Joshua Kahn

These 2-D materials can be prepared in crystalline sheets as thin as a single monolayer, only one or a few atoms thick. Within a monolayer, electrons are restricted in how they can move: Like pieces on a board game, they can move front to back, side to side or diagonally — but not up or down. This constraint makes monolayers functionally two-dimensional.

The 2-D realm exposes properties predicted by quantum mechanics — the probability-wave-based rules that underlie the behavior of all matter. Since graphene — the first monolayer — debuted in 2004, scientists have isolated many other 2-D materials and shown that they harbor unique physical and chemical properties that could revolutionize computing and telecommunications, among other fields.

For a team led by scientists at the University of Washington, the 2-D form of one metallic compound — tungsten ditelluride, or WTe2 — is a bevy of quantum revelations. In a paper published online July 23 in the journal Nature, researchers report their latest discovery about WTe2: Its 2-D form can undergo “ferroelectric switching.” They found that when two monolayers are combined, the resulting “bilayer” develops a spontaneous electrical polarization. This polarization can be flipped between two opposite states by an applied electric field.

“Finding ferroelectric switching in this 2-D material was a complete surprise,” said senior author David Cobden, a UW professor of physics. “We weren’t looking for it, but we saw odd behavior, and after making a hypothesis about its nature we designed some experiments that confirmed it nicely.”

Materials with ferroelectric properties can have applications in memory storage, capacitors, RFID card technologies and even medical sensors.

“Think of ferroelectrics as nature’s switch,” said Cobden. “The polarized state of the ferroelectric material means that you have an uneven distribution of charges within the material — and when the ferroelectric switching occurs, the charges move collectively, rather as they would in an artificial electronic switch based on transistors.”

The UW team created WTe2 monolayers from its the 3-D crystalline form, which was grown by co-authors Jiaqiang Yan at Oak Ridge National Laboratory and Zhiying Zhao at the University of Tennessee, Knoxville. Then the UW team, working in an oxygen-free isolation box to prevent WTe2 from degrading, used Scotch Tape to exfoliate thin sheets of WTe2 from the crystal — a technique widely used to isolate graphene and other 2-D materials. With these sheets isolated, they could measure their physical and chemical properties, which led to the discovery of the ferroelectric characteristics.

WTe2 is the first exfoliated 2-D material known to undergo ferroelectric switching. Before this discovery, scientists had only seen ferroelectric switching in electrical insulators. But WTe2 isn’t an electrical insulator; it is actually a metal, albeit not a very good one. WTe2 also maintains the ferroelectric switching at room temperature, and its switching is reliable and doesn’t degrade over time, unlike many conventional 3-D ferroelectric materials, according to Cobden. These characteristics may make WTe2 a promising material for smaller, more robust technological applications than other ferroelectric compounds.

“The unique combination of physical characteristics we saw in WTe2 is a reminder that all sorts of new phenomena can be observed in 2-D materials,” said Cobden.

Ferroelectric switching is the second major discovery Cobden and his team have made about monolayer WTe2. In a 2017 paper in Nature Physics, the team reported that this material is also a “topological insulator,” the first 2-D material with this exotic property.

In a topological insulator, the electrons’ wave functions — mathematical summaries of their quantum mechanical states — have a kind of built-in twist. Thanks to the difficulty of removing this twist, topological insulators could have applications in quantum computing — a field that seeks to exploit the quantum-mechanical properties of electrons, atoms or crystals to generate computing power that is exponentially faster than today’s technology. The UW team’s discovery also stemmed from theories developed by David J. Thouless, a UW professor emeritus of physics who shared the 2016 Nobel Prize in Physics in part for his work on topology in the 2-D realm.

Cobden and his colleagues plan to keep exploring monolayer WTe2 to see what else they can learn.

“Everything we have measured so far about WTe2 has some surprise in it,” said Cobden. “It’s exciting to think what we might find next.”

Yale-NUS Associate Professor of Science (Physics) Shaffique Adam is the lead author for a recent work that describes a model for electron interaction in Dirac materials, a class of materials that includes graphene and topological insulators, solving a 65-year-old open theoretical problem in the process. The discovery will help scientists better understand electron interaction in new materials, paving the way for developing advanced electronics such as faster processors. The work was published in the peer-reviewed academic journal Science on 10 August 2018.

The open problem was what controlled the velocity of the electron liquid (shown as a wavy waterfront). The findings show that it is the frozen antiferromagnetism on the honeycomb lattice that sets this velocity by slowing it down as the two interact. Credit: Yale-NUS College

Electron behaviour is governed by two major theories – the Coulomb’s law and the Fermi liquid theory. According to Fermi liquid theory, electrons in a conductive material behave like a liquid – their “flow” through a material is what causes electricity. For Dirac fermions, the Fermi liquid theory breaks down if the Coulomb force between the electrons crosses a certain threshold: the electrons “freeze” into a more rigid pattern which inhibits the “flow” of electrons, causing the material to become non-conductive.

For more than 65 years, this problem was relegated to a mathematical curiosity, because Dirac materials where the Coulomb threshold was reached had never been made. Today, however, we routinely make use of quantum materials for applications in technology, such as transistors in processors, where the electrons are engineered to have desired properties, including those which push the Coulomb force past this threshold. But the effects of strong electron-electron interaction can only be seen in very clean samples.

In the work immediately following his PhD, Assoc Prof Adam proposed a model to describe experimentally available Dirac materials that were “very dirty” (contains a lot of impurities). However, in the years that followed, newer and cleaner materials have been made, and this previous theory no longer worked.

In this latest work titled, “The role of electron-electron interactions in two-dimensional Dirac fermions”, Assoc Prof Adam and his research team have developed a model which explains electron interactions past the Coulomb threshold in all Dirac materials by using a combination of numerical and analytical techniques.

In this research, the team designed a method to study the evolution of physical observables in a controllable manner and used it to address the competing effects of short-range and long-range parts in models of the Coulomb interaction. The researchers discovered that the velocity of electrons (the “flow” speed) in a material could decrease if the short-range interaction that favoured the insulating, “frozen” state dominated. However, the velocity of electrons could be enhanced by the long-range component that favoured the conducting, “liquid” state. With this discovery, scientists can better understand long-range interactions of electrons non-perturbatively – something that previous theories were not able to explain – and serves as useful predictors for experiments exploring the long-range-interaction divergence in Dirac electrons when they transition between conducting to insulating phases.

This improved understanding in the evolution of the electron velocity during the phase transition paves the way to help scientists develop low heat dissipation devices for electronics. Assoc Prof Adam explains, “The higher the electron velocity, the faster transistors can be switched on and off. However, this faster processor performance comes at the price of increased power leakage, which produces extra heat, and this heat will counteract the performance increase granted by the faster switching. Our findings on electron velocity behaviour will help scientists engineer devices that are capable of faster switching but low power leakage.”

Assoc Prof Adam adds, “Because the mechanism in our new model harnesses the Coulomb force, it would cost less energy per switch compared to mechanisms available currently. Understanding and applying our new model could potentially usher in a new generation of technology.”

By Laith Altimime

In a bid to reinvigorate Europe’s electronics strategy and strengthen the region’s position in key emerging technologies, European electronics industry CEOs in June called on public and private actors to accelerate collaboration at the European Union and national levels. The CEO’s proposed new strategic actions include creating a European Design Alliance to pool the expertise of design houses and forming an electronics education and skills task force consisting of representatives from industry, research, European institutions, member states and SEMI.

The business executive’s calls – embodied in “Boosting Electronics Value Chain in Europe,” a report submitted to Mariya Gabriel, Commissioner for Digital Economy and Society, of the European Commission – come as global competition in the electronics industry intensifies. The document highlights Europe’s need to buttress its position amongst others in artificial intelligence (AI), autonomous driving and personalized healthcare – applications that rely on new semiconductor architectures, materials, equipment and design methodologies.

The European semiconductor industry plans to pour more than 50 billion EUR into technology development and innovation by 2025, deepening its investments in research, innovation and manufacturing to help drive Europe’s digital transformation.

For its part, SEMI, as the industry association connecting the electronics value chain, is well-positioned to bring together member companies and public actors to address key challenges facing the sector. This year in April, SEMI announced that Electronics System Design Alliance (ESD Alliance) will join SEMI, adding key electronics design companies to SEMI membership and unlocking the full potential of collaboration between electronics design and manufacturing.  With the ESD Alliance, SEMI adds the product design segment to the electronics supply chain, streamlining and connecting the full ecosystem. The integration also promises to support the industry coordination required to develop specialized (AI) chips used in various smart applications.

SEMI Europe is also accelerating its education and workforce development activities. SEMI Europe this year created its Workforce Development Council Europe, chaired by Emir Demircan, SEMI Europe’s senior manager of public policy, based in Brussels. The council is designed to connect electronics industry human resources representatives with members to evolve best practices in hiring that help Europe gain, train and retain world-class talent.

Other SEMI Europe workforce development activities include the following:

  • SEMI member forums across Europe are helping young talent with career opportunities in the semiconductor industry.
  • In November, SEMICON Europa will host a Career Café where STEM students will explore careers in electronics design and manufacturing.
  • With the participation of representatives from the European Commission, SEMI Europe’s Industry Strategy Symposium in April focused on strategies for attracting more skilled workers into electronics design and manufacturing.

Looking ahead, semiconductor sales is forecast to reach USD 1 trillion by 2030. The global semiconductor industry is at the heart of a new era of connectivity, developing breakthrough solutions for ascendant data-driven technologies such as AI and Internet of Things (IoT). SEMI Europe’s role in strengthening the region’s position in the global electronics industry to help drive this extraordinary growth is critical. SEMI Europe will continue to foster public-private partnerships to tackle industry challenges that are too big, too risky and too costly for companies and government institutions to address alone.

Contact: Laith Altimime, President, SEMI Europe, [email protected] ; Emir Demircan, Sr Manager Public Policy, [email protected]

Originally published on the SEMI blog.

Scientists are experimenting with narrow strips of graphene, called nanoribbons, in hopes of making cool new electronic devices, but University of California, Berkeley scientists have discovered another possible role for them: as nanoscale electron traps with potential applications in quantum computers.

This is a scanning tunneling microscope image of a topological nanoribbon superlattice. Electrons are trapped at the interfaces between wide ribbon segments (which are topologically non-trivial) and narrow ribbon segments (which are topologically trivial). The wide segments are 9 carbon atoms across (1.65 nanometers) while the narrow segments are only 7 carbon atoms across (1.40 nanometers). Credit: Michael Crommie, Felix Fischer, UC Berkeley

Graphene, a sheet of carbon atoms arranged in a rigid, honeycomb lattice resembling chicken wire, has interesting electronic properties of its own. But when scientists cut off a strip less than about 5 nanometers in width – less than one ten-thousandth the width of a human hair – the graphene nanoribbon takes on new quantum properties, making it a potential alternative to silicon semiconductors.

UC Berkeley theoretician Steven Louie, a professor of physics, predicted last year that joining two different types of nanoribbons could yield a unique material, one that immobilizes single electrons at the junction between ribbon segments.

In order to accomplish this, however, the electron “topology” of the two nanoribbon pieces must be different. Topology here refers to the shape that propagating electron states adopt as they move quantum mechanically through a nanoribbon, a subtle property that had been ignored in graphene nanoribbons until Louie’s prediction.

Two of Louie’s colleagues, chemist Felix Fischer and physicist Michael Crommie, became excited by his idea and the potential applications of trapping electrons in nanoribbons and teamed up to test the prediction. Together they were able to experimentally demonstrate that junctions of nanoribbons having the proper topology are occupied by individual localized electrons.

A nanoribbon made according to Louie’s recipe with alternating ribbon strips of different widths, forming a nanoribbon superlattice, produces a conga line of electrons that interact quantum mechanically. Depending on the strips’ distance apart, the new hybrid nanoribbon is either a metal, a semiconductor or a chain of qubits, the basic elements of a quantum computer.

“This gives us a new way to control the electronic and magnetic properties of graphene nanoribbons,” said Crommie, a UC Berkeley professor of physics. “We spent years changing the properties of nanoribbons using more conventional methods, but playing with their topology gives us a powerful new way to modify the fundamental properties of nanoribbons that we never suspected existed until now.”

Louie’s theory implies that nanoribbons are topological insulators: unusual materials that are insulators, that is, non-conducting in the interior, but metallic conductors along their surface. The 2016 Nobel Prize in Physics was awarded to three scientists who first used the mathematical principles of topology to explain strange, quantum states of matter, now classified as topological materials.

Three-dimensional topological insulators conduct electricity along their sides, sheets of 2D topological insulators conduct electricity along their edges, and these new 1D nanoribbon topological insulators have the equivalent of zero-dimensional (0D) metals at their edges, with the caveat that a single 0D electron at a ribbon junction is confined in all directions and can’t move anywhere. If another electron is similarly trapped nearby, however, the two can tunnel along the nanoribbon and meet up via the rules of quantum mechanics. And the spins of adjacent electrons, if spaced just right, should become entangled so that tweaking one affects the others, a feature that is essential for a quantum computer.

The synthesis of the hybrid nanoribbons was a difficult feat, said Fischer, a UC Berkeley professor of chemistry. While theoreticians can predict the structure of many topological insulators, that doesn’t mean that they can be synthesized in the real world.

“Here you have a very simple recipe for how to create topological states in a material that is very accessible,” Fischer said. “It is just organic chemistry. The synthesis is not trivial, granted, but we can do it. This is a breakthrough in that we can now start thinking about how to use this to achieve new, unprecedented electronic structures.”

The researchers will report their synthesis, theory and analysis in the Aug. 9 issue of the journal Nature. Louie, Fischer and Crommie are also faculty scientists at Lawrence Berkeley National Laboratory.

Knitting nanoribbons together

Louie, who specializes in the quantum theory of unusual forms of matter, from superconductors to nanostructures, authored a 2017 paper that described how to make graphene nanoribbon junctions that take advantage of the theoretical discovery that nanoribbons are 1D topological insulators. His recipe required taking so-called topologically trivial nanoribbons and pairing them with topologically non-trivial nanoribbons, where Louie explained how to tell the difference between the two by looking at the shape of the quantum mechanical states that are adopted by electrons in the ribbons.

Fischer, who specializes in synthesizing and characterizing unusual nanomolecules, discovered a new way to make atomically precise nanoribbon structures that would exhibit these properties from complex carbon compounds based on anthracene.

Working side by side, Fischer’s and Crommie’s research teams then built the nanoribbons on top of a gold catalyst heated inside a vacuum chamber, and Crommie’s team used a scanning tunneling microscope to confirm the electronic structure of the nanoribbon. It perfectly matched Louie’s theory and calculations. The hybrid nanoribbons they made had between 50 and 100 junctions, each occupied by an individual electron able to quantum mechanically interact with its neighbors.

“When you heat the building blocks, you get a patchwork quilt of molecules knitted together into this beautiful nanoribbon,” Crommie said. “But because the different molecules can have different structures, the nanoribbon can be designed to have interesting new properties.”

Fischer said that the length of each segment of nanoribbon can be varied to change the distance between trapped electrons, thus changing how they interact quantum mechanically. When close together the electrons interact strongly and split into two quantum states (bonding and anti-bonding) whose properties can be controlled, allowing the fabrication of new 1D metals and insulators. When the trapped electrons are slightly more separated, however, they act like small, quantum magnets (spins) that can be entangled and are ideal for quantum computing.

“This provides us with a completely new system that alleviates some of the problems expected for future quantum computers, such as how to easily mass-produce highly precise quantum dots with engineered entanglement that can be incorporated into electronic devices in a straightforward way,” Fischer said.

Co-lead authors of the paper are Daniel Rizzo and Ting Cao from the Department of Physics and Gregory Veber from the Department of Chemistry, along with their colleagues Christopher Bronner, Ting Chen, Fangzhou Zhao and Henry Rodriguez. Fischer and Crommie are both members of the Kavli Energy NanoSciences Institute at UC Berkeley and Berkeley Lab.

The research was supported by the Office of Naval Research, Department of Energy, Center for Energy Efficient Electronics Science and National Science Foundation.

The Semiconductor Industry Association (SIA), representing U.S. leadership in semiconductor manufacturing, design, and research, today announced worldwide sales of semiconductors reached $117.9 billion during the second quarter of 2018, an increase of 6.0 percent over the previous quarter and 20.5 percent more than the second quarter of 2017. Global sales for the month of June 2018 reached $39.3 billion, an uptick of 1.5 percent over last month’s total of $38.7 billion, and a surge of 20.5 percent compared to the June 2017 total of $32.6 billion. Cumulatively, year-to-date sales during the first half of 2018 were 20.4 percent higher than they were at the same point in 2017. All monthly sales numbers are compiled by the World Semiconductor Trade Statistics (WSTS) organization and represent a three-month moving average.

“Halfway through 2018, the global semiconductor industry continues to post impressive sales totals, notching its highest-ever quarterly sales in Q2 and record monthly sales in June,” said John Neuffer, president and CEO, Semiconductor Industry Association. “Global sales have increased year-to-year by more than 20 percent for 15 consecutive months, and sales of every major product category increased year-to-year in June. Sales into the Americas market continue to be strong, with year-to-date totals more than 30 percent higher than at the same point last year.”

Regionally, sales increased compared to June 2017 in China (30.7 percent), the Americas (26.7 percent), Europe (15.9 percent), Japan (14.0 percent), and Asia Pacific/All Other (8.6 percent). Sales also were up compared to last month in China (3.2 percent), Japan (1.3 percent), the Americas (1.2 percent), and Asia Pacific/All Other (0.5 percent), but down slightly in Europe (-0.8 percent).

For comprehensive monthly semiconductor sales data and detailed WSTS Forecasts, consider purchasing the WSTS Subscription Package. For detailed data on the global and U.S. semiconductor industry and market, consider purchasing the 2018 SIA Databook.

Rice University researchers have found that fracture-resistant “rebar graphene” is more than twice as tough as pristine graphene.

Rice University graduate student Emily Hacopian holds the platform she used to study the strength of rebar graphene under a microscope. Hacopian and colleagues discovered that reinforcing graphene with carbon nanotubes makes the material twice as tough. Credit: Jeff Fitlow/Rice University

Graphene is a one-atom-thick sheet of carbon. On the two-dimensional scale, the material is stronger than steel, but because graphene is so thin, it is still subject to ripping and tearing.

Rebar graphene is the nanoscale analog of rebar (reinforcement bars) in concrete, in which embedded steel bars enhance the material’s strength and durability. Rebar graphene, developed by the Rice lab of chemist James Tour in 2014, uses carbon nanotubes for reinforcement.

In a new study in the American Chemical Society journal ACS Nano, Rice materials scientist Jun Lou, graduate student and lead author Emily Hacopian and collaborators, including Tour, stress-tested rebar graphene and found that nanotube rebar diverted and bridged cracks that would otherwise propagate in unreinforced graphene.

The experiments showed that nanotubes help graphene stay stretchy and also reduce the effects of cracks. That could be useful not only for flexible electronics but also electrically active wearables or other devices where stress tolerance, flexibility, transparency and mechanical stability are desired, Lou said.

Both the lab’s mechanical tests and molecular dynamics simulations by collaborators at Brown University revealed the material’s toughness.

Graphene’s excellent conductivity makes it a strong candidate for devices, but its brittle nature is a downside, Lou said. His lab reported two years ago that graphene is only as strong as its weakest link. Those tests showed the strength of pristine graphene to be “substantially lower” than its reported intrinsic strength. In a later study, the lab found molybdenum diselenide, another two-dimensional material of interest to researchers, is also brittle.

Tour approached Lou and his group to carry out similar tests on rebar graphene, made by spin-coating single-walled nanotubes onto a copper substrate and growing graphene atop them via chemical vapor deposition.

To stress-test rebar graphene, Hacopian, Yang and colleagues had to pull it to pieces and measure the force that was applied. Through trial and error, the lab developed a way to cut microscopic pieces of the material and mount it on a testbed for use with scanning electron and transmission electron microscopes.

“We couldn’t use glue, so we had to understand the intermolecular forces between the material and our testing devices,” Hacopian said. “With materials this fragile, it’s really difficult.”

Rebar didn’t keep graphene from ultimate failure, but the nanotubes slowed the process by forcing cracks to zig and zag as they propagated. When the force was too weak to completely break the graphene, nanotubes effectively bridged cracks and in some cases preserved the material’s conductivity.

In earlier tests, Lou’s lab showed graphene has a native fracture toughness of 4 megapascals. In contrast, rebar graphene has an average toughness of 10.7 megapascals, he said.

Simulations by study co-author Huajian Gao and his team at Brown confirmed results from the physical experiments. Gao’s team found the same effects in simulations with orderly rows of rebar in graphene as those measured in the physical samples with rebar pointing every which way.

“The simulations are important because they let us see the process on a time scale that isn’t available to us with microscopy techniques, which only give us snapshots,” Lou said. “The Brown team really helped us understand what’s happening behind the numbers.”

He said the rebar graphene results are a first step toward the characterization of many new materials. “We hope this opens a direction people can pursue to engineer 2D material features for applications,” Lou said.

A UCF physicist has discovered a new material that has the potential to become a building block in the new era of quantum materials, those that are composed of microscopically condensed matter and expected to change our development of technology.

Researchers are entering the Quantum Age, and instead of using silicon to advance technology they are finding new quantum materials, conductors that have the ability to use and store energy at the subatomic level.

Assistant Professor Madhab Neupane has spent his career learning about the quantum realm and looking for these new materials, which are expected to become the foundation of the technology to develop quantum computers and long-lasting memory devices. These new devices will increase computing power for big data and greatly reduce the amount of energy required to power electronics.

Madhab Neupane and his research team with the in-house ARPES system. From left to right: Gyanendra Dhakal (Graduate student), Klauss Dimitri (Undergraduate student), Md Mofazzel Hosen (Graduate student), Madhab Neupane, Christopher Sims (Graduate student), Firoza Kabir (Graduate student) Credit: University of Central Florida

Big companies recognize the potential and they are investing in research. Microsoft has invested in its Station Q, a lab dedicated solely to studying the field of topological quantum computing. Google has teamed up with NASA on a Quantum AI Lab that studies how quantum computing and artificial intelligence can mesh. Once the quantum phenomena are well understood and can be engineered, the new technologies are expected to change the world, much like electronics did at the end of the 20th century.

Neupane’s discovery, published today in Nature Communications is a big step in making that reality happen.

“Our discovery takes us one step closer to the application of quantum materials and helps us gain a deeper understanding of the interactions between various quantum phases,” Neupane said.

The material Neupane and his team discovered, Hf2Te2P – chemically composed of hafnium, tellurium and phosphorus — is the first material that has multiple quantum properties, meaning there is more than one electron pattern that develops within the electronic structure, giving it a range of quantum properties.

Neupane’s research group is using its specialized equipment for advanced-spectroscopic characterization of quantum materials to develop their work further.

“With the discovery of such an incredible material, we are at the brink of having a deeper understanding of the interplay of topological phases and developing the foundation for a new model from which all technology will be based off, essentially the silicon of a new era,” Neupane said.