Category Archives: Process Materials

Researchers at the University of Illinois at Chicago have discovered a route to alter boron nitride, a layered 2D material, so that it can bind to other materials, like those found in electronics, biosensors and airplanes, for example. Being able to better-incorporate boron nitride into these components could help dramatically improve their performance.

Treatment with a superacid causes boron nitride layers to separate and become positively charged, allowing for it to interface with other nanoparticles, like gold. Credit: Berry, et al

The scientific community has long been interested in boron nitride because of its unique properties –it is strong, ultrathin, transparent, insulating, lightweight and thermally conductive — which, in theory, makes it a perfect material for use by engineers in a wide variety of applications. However, boron nitride’s natural resistance to chemicals and lack of surface-level molecular binding sites have made it difficult for the material to interface with other materials used in these applications.

UIC’s Vikas Berry and his colleagues are the first to report that treatment with a superacid causes boron nitride layers to separate into atomically thick sheets, while creating binding sites on the surface of these sheets that provide opportunities to interface with nanoparticles, molecules and other 2D nanomaterials, like graphene. This includes nanotechnologies that use boron nitride to insulate nano-circuits.

Their findings are published in ACS Nano, a journal of the American Chemical Society.

“Boron nitride is like a stack of highly sticky papers in a ream, and by treating this ream with chlorosulfonic acid, we introduced positive charges on the boron nitride layers that caused the sheets to repel each other and separate,” said Berry, associate professor and head of chemical engineering at the UIC College of Engineering and corresponding author on the paper.

Berry said that “like magnets of the same polarity,” these positively charged boron nitride sheets repel one another.

“We showed that the positive charges on the surfaces of the separated boron nitride sheets make it more chemically active,” Berry said. “The protonation — the addition of positive charges to atoms — of internal and edge nitrogen atoms creates a scaffold to which other materials can bind.”

Berry said that the opportunities for boron nitride to improve composite materials in next-generation applications are vast.

“Boron and nitrogen are on the left and the right of carbon on the periodic table and therefore, boron-nitride is isostructural and isoelectronic to carbon-based graphene, which is considered a ‘wonder material,'” Berry said. This means these two materials are similar in their atomic crystal structure (isostructural) and their overall electron density (isoelectric), he said.

“We can potentially use this material in all kinds of electronics, like optoelectronic and piezoelectric devices, and in many other applications, from solar-cell passivation layers, which function as filters to absorb only certain types of light, to medical diagnostic devices,” Berry said.

Oxygen vs. nanochip


September 25, 2018

For the first time ever, an international team of scientists from NUST MISIS, the Hungarian Academy of Sciences, the University of Namur (Belgium), and Korea Research Institute for Standards & Science has managed to trace in details the structural changes of two-dimensional molybdenum disulfide under long-term environmental impact. The new data narrows the scope of its potential application in microelectronics and at the same time opens up new prospects for the use of two-dimensional materials as catalysts. The research results have been published in the international scientific journal Nature Chemistry.

Pavel Sorokin, head of the research team and leading researcher at the NUST MISIS Laboratory of Inorganic Nanomaterials. Credit: Sergey Gnuskov/NUST MISIS

Molybdenum disulfide (MoS2) is considered a promising basis for a variety of ultra-small electronic devices such as high-frequency detectors, rectifiers, and transistors, so research teams around the world are actively studying its two-dimensional format, nanofilm. However, the new research conducted by NUST MISIS scientists has demonstrated that when this two-dimensional material is significantly oxidized in air, it turns into another connection.

Any electronic device using MoS2, without proper protection would simply stop working relatively quickly. To potentially use MoS2 in microelectronics, the devices would have to be encapsulated.

«For the first time ever, we have managed to experimentally prove that a single-layer molybdenum disulfide strongly degrades under environmental conditions, oxidizing and turning into a solid solution MoS2-xOx,. The functions of a two-dimensional semiconductor without defects and losses can be implemented with molybdenum diselenides, another material with a similar structure», said Pavel Sorokin, head of the research team and leading researcher at the NUST MISIS Laboratory of Inorganic Nanomaterials.

In the experiments, two-dimensional layers of molybdenum disulfide obtained as a result of the stratification of molybdenum disulfide crystals by ultrasound, were maintained in environmental conditions at normal room temperature and lighting for long periods (more than a year and a half), during which scientists observed the changes in the structure of its surface.

«Thanks to the use of tunneling microscopy, we were able to track the structural changes of crystals of two-dimensional sulfur disulfide at the atomic level during long-term exposure to environmental conditions. We have discovered that the material previously considered stable is actually subject to spontaneous oxidation, but at the same time, the original crystal structure of MoS2 monolayers retains formations of MoS2-xOx solid solutions. Our simulations have allowed us to propose a mechanism of forming such solid solutions, and the results of the theoretical calculations are in complete agreement with our experimental measurements» – said Zakhar Popov, one of the co-authors of the study and a senior researcher at the NUST MISIS Laboratory of Inorganic Nanomaterials.

«The study’s second key discovery is the new material that the monolayer of the molybdenum disulfide turns into is a two-dimensional crystal of a solid solution MoS2-xOx, which is an effective catalyst for electromechanical processes», concluded Sorokin.

The ability of metallic or semiconducting materials to absorb, reflect and act upon light is of primary importance to scientists developing optoelectronics – electronic devices that interact with light to perform tasks. Rice University scientists have now produced a method to determine the properties of atom-thin materials that promise to refine the modulation and manipulation of light.

Rice University researchers modeled two-dimensional materials to quantify how they react to light. They calculated how the atom-thick materials in single or stacked layers would transmit, absorb and reflect light. The graphs above measure the maximum absorbance of several of the 55 materials tested. Credit: Yakobson Research Group/Rice University

Two-dimensional materials have been a hot research topic since graphene, a flat lattice of carbon atoms, was identified in 2001. Since then, scientists have raced to develop, either in theory or in the lab, novel 2D materials with a range of optical, electronic and physical properties.

Until now, they have lacked a comprehensive guide to the optical properties those materials offer as ultrathin reflectors, transmitters or absorbers.

The Rice lab of materials theorist Boris Yakobson took up the challenge. Yakobson and his co-authors, graduate student and lead author Sunny Gupta, postdoctoral researcher Sharmila Shirodkar and research scientist Alex Kutana, used state-of-the-art theoretical methods to compute the maximum optical properties of 55 2D materials.

“The important thing now that we understand the protocol is that we can use it to analyze any 2D material,” Gupta said. “This is a big computational effort, but now it’s possible to evaluate any material at a deeper quantitative level.”

Their work, which appears this month in the American Chemical Society journal ACS Nano, details the monolayers’ transmittance, absorbance and reflectance, properties they collectively dubbed TAR. At the nanoscale, light can interact with materials in unique ways, prompting electron-photon interactions or triggering plasmons that absorb light at one frequency and emit it in another.

Manipulating 2D materials lets researchers design ever smaller devices like sensors or light-driven circuits. But first it helps to know how sensitive a material is to a particular wavelength of light, from infrared to visible colors to ultraviolet.

“Generally, the common wisdom is that 2D materials are so thin that they should appear to be essentially transparent, with negligible reflection and absorption,” Yakobson said. “Surprisingly, we found that each material has an expressive optical signature, with a large portion of light of a particular color (wavelength) being absorbed or reflected.”

The co-authors anticipate photodetecting and modulating devices and polarizing filters are possible applications for 2D materials that have directionally dependent optical properties. “Multilayer coatings could provide good protection from radiation or light, like from lasers,” Shirodkar said. “In the latter case, heterostructured (multilayered) films — coatings of complementary materials — may be needed. Greater intensities of light could produce nonlinear effects, and accounting for those will certainly require further research.”

The researchers modeled 2D stacks as well as single layers. “Stacks can broaden the spectral range or bring about new functionality, like polarizers,” Kutana said. “We can think about using stacked heterostructure patterns to store information or even for cryptography.”

Among their results, the researchers verified that stacks of graphene and borophene are highly reflective of mid-infrared light. Their most striking discovery was that a material made of more than 100 single-atom layers of boron — which would still be only about 40 nanometers thick — would reflect more than 99 percent of light from the infrared to ultraviolet, outperforming doped graphene and bulk silver.

There’s a side benefit that fits with Yakobson’s artistic sensibility as well. “Now that we know the optical properties of all these materials – the colors they reflect and transmit when hit with light – we can think about making Tiffany-style stained-glass windows on the nanoscale,” he said. “That would be fantastic!”

STMicroelectronics (NYSE: STM) and Leti, a research institute of CEA Tech, today announced their cooperation to industrialize GaN (Gallium Nitride)-on-Silicon technologies for power switching devices. This power GaN-on-Si technology will enable ST to address high-efficiency, high-power applications, including automotive on-board chargers for hybrid and electric vehicles, wireless charging, and servers.

The collaboration focuses on developing and qualifying advanced power GaN-on-Silicon diode and transistor architectures on 200mm wafers, a market that the research firm IHS Markit estimates to grow at a CAGR of more than 20 percent from 2019 to 2024[1]. Together, in the framework of IRT Nanoelec, ST and Leti are developing the process technology on Leti’s 200mm R&D line and expect to have validated engineering samples in 2019. In parallel, ST will set up a fully qualified manufacturing line, including GaN/Si hetero-epitaxy, for initial production running in ST’s front-end wafer fab in Tours, France, by 2020.

In addition, given the attractiveness of GaN-on-Si technology for power applications, Leti and ST are assessing advanced techniques to improve device packaging for the assembly of high power-density power modules.

“Recognizing the incredible value of wide-bandgap semiconductors, ST’s contributions in Power GaN-on-Si manufacturing and packaging technologies with CEA-Leti move to arm us with the industry’s most complete portfolio of GaN and SiC products and capabilities, on top of our proven competence to manufacture high-quality, reliable products in volume,” said Marco Monti, President Automotive and Discrete Group, STMicroelectronics.

“Leveraging Leti’s 200mm generic platform, Leti’s team is fully committed to supporting ST’s strategic GaN-on-Si power-electronics roadmap and is ready to transfer the technology onto ST’s dedicated GaN-on-Si manufacturing line in Tours. This co-development, involving teams from both sides, leverages the IRT Nanoelec framework program to broaden the required expertise and innovate from the start at device and system levels,” said Leti CEO Emmanuel Sabonnadiere.

University of Groningen physicists in collaboration with a theoretical physics group from Universität Regensburg have built an optimized bilayer graphene device which displays both long spin lifetimes and electrically controllable spin-lifetime anisotropy. It has the potential for practical applications such as spin-based logic devices. The results were published in Physical Review Letters on 20 September.

The tremendous development of computer systems over the last 60 years has increased their capability enabling them to spread into nearly all aspects of our daily life. The development approach of the last decades has been to miniaturize the elements on a computer chip. This has now reached scales below 100 atoms and is approaching its fundamental limit. Since the increasing range of applications makes higher demands of performance and energy efficiency, new concepts are required which can provide enhanced functionalities.

Spintronics

In this context, researchers are studying the use of spins for the transport and storage of information. Spin is a quantum mechanical property of electrons, which gives them a magnetic moment that could be used to transfer or store information. The field of spin-based electronics (spintronics) has already made its way into the hard drives of computers, and also promises to revolutionize the processing units.

A focus of spintronics research is on optimizing materials for the transport and control of spins. Graphene is an excellent conductor of electron spins, but it is hard to control spins in this material because of their weak interaction with the carbon atoms (the spin-orbit coupling). Previous work by the University of Groningen Physics of Nanodevices group led by Professor Bart van Wees placed graphene in close proximity to a transition metal dichalcogenide, a layered material with a high intrinsic spin-orbit coupling strength. The high spin-orbit coupling strength was transferred to graphene via a short-range interaction at the interface. This made it possible to control the spin currents, but was at the cost of reduced spin life.

Control of spin currents

In the new study, the researchers managed to control spin currents in a graphene bilayer. ‘This was actually predicted in a theoretical paper in 2012, but the technology to measure the effect accurately only became available recently’, explains Christian Leutenantsmeyer, a Ph.D. student in the Van Wees group and first author of the PRL paper. The paper is a collaboration between the Van Wees group and a theoretical physics group from Universität Regensburg in Germany.

The 2012 paper predicted anisotropic spin transport in graphene bilayers as a consequence of spin-orbit coupling in bilayer graphene. Anisotropic spin transport describes the situation in which spins pointing either in or out of the graphene plane are conducted with different efficiencies. This was indeed observed in the devices Leutenantsmeyer and his colleagues produced.

Insight

The spin current could also be controlled using spin-lifetime anisotropy since in-plane spins live much shorter than out-of-plane ones, and could be used in devices to polarize spin currents. Leutenantsmeyer: ‘We found that the strength anisotropy is comparable to graphene/transition metal dichalcogenide devices, but we observed a 100 times larger spin lifetime. We therefore achieved both efficient spin transport and efficient control of spins.’

The work provides insight into the fundamental properties of spin-orbit coupling in bilayer graphene. ‘And furthermore, our findings open up new avenues for the efficient electrical control of spins in high-quality graphene, a milestone for graphene.’

Developing materials suitable for use in optoelectronic devices is currently a very active area of research. The search for materials for use in photoelectric conversion elements has to be carried out in parallel with developing the optimal film formation process for each material, and this can take a few years for just one material. Until now there has been a trade-off, balancing electronic properties and material morphology. Researchers at Osaka University have developed a two-step process that can produce materials with good morphological properties in addition to excellent photoresistor performance. Their findings were published in the Journal of Physical Chemistry Letters.

The powder sample is insoluble, therefore fabrication of devices using wet processes is not possible. Credit: Osaka University

Bismuth sulfide, Bi2S3, belongs to a class of materials known as metal chalcogenides, which show significant promise owing to their optical and electronic properties. However, the performance of Bi2S3-based photoresponsive devices is dependent on the method used to process the film, and many of the reported approaches are hampered by low film crystallinity. Even when high crystallinity is achieved, the nature of the grains can have a negative effect on performance, therefore films with low surface roughness and large grain size are desirable.

“We searched more than 200 materials using a unique, ultra high-speed screening method that can evaluate performance, even when only powdered samples are available,” study corresponding author Akinori Saeki says. “We found that bismuth sulfide, which is inexpensive and less toxic than conventional inorganic solar cell materials, can be processed in a way that does not compromise its excellent photoelectrical properties.”

The technique used produces a 2D layered film in two treatment steps; solution spin-coating followed by crystallization. The photo response performance of the resulting film showed improvements of 6-100 times compared with those of films prepared using other processing methods. Owing to the non-toxic and abundant nature of bismuth and sulfur, the findings are expected to influence the development of commercial optoelectronic devices including solar cells.

“We demonstrated a facile processing technique that does not compromise material performance,” lead author Ryosuke Nishikubo says. “We believe that solution-processable bismuth-based semiconductors are viable alternatives to commercially available inorganic solar cells and show promise for widespread future use. The fact that they are non-toxic also sets them apart from other alternative optoelectronic materials, such as lead halide perovskites.”

Processing materials for device applications without compromising their electronic properties is important for making materials commercially relevant. The reported process has been used to successfully prepare other metal sulfide semiconductors such as lead sulfide, demonstrating the versatility of the approach.

Quantum dots are nanometer-sized boxes that have attracted huge scientific interest for use in nanotechnology because their properties obey quantum mechanics and are requisites to develop advanced electronic and photonic devices. Quantum dots that self-assemble during their formation are particularly attractive as tunable light emitters in nanoelectronic devices and to study quantum physics because of their quantized transport behavior. It is important to develop a way to measure the charge in a single self-assembled quantum dot to achieve quantum information processing; however, this is difficult because the metal electrodes needed for the measurement can screen out the very small charge of the quantum dot. Researchers at Osaka University have recently developed the first device based on two self-assembled quantum dots that can measure the single-electron charge of one quantum dot using a second as a sensor.

The device was fabricated using two indium arsenide (InAs) quantum dots connected to electrodes that were deliberately narrowed to minimize the undesirable screening effect.

This is a scanning electron micrograph of InAs self-assembled quantum dot transistor device. Credit: Osaka University

“The two quantum dots in the device showed significant capacitive coupling,” says Haruki Kiyama. “As a result, the single-electron charging of one dot was detected as a change in the current of the other dot.”

The current response of the sensor quantum dot depended on the number of electrons in the target dot. Hence the device can be used for real-time detection of single-electron tunneling in a quantum dot. The tunneling events of single electrons in and out of the target quantum dot were detected as switching between high and low current states in the sensor quantum dot. Detection of such tunneling events is important for the measurement of single spins towards electron spin qubits.

“Sensing single charges in self-assembled quantum dots is exciting for a number of reasons,” explains Akira Oiwa. “The ability to achieve electrical readout of single electron states can be combined with photonics and used in quantum communications. In addition, our device concept can be extended to different materials and systems to study the physics of self-assembled quantum dots.”

An electronic device using self-assembled quantum dots to detect single-electron events is a novel strategy for increasing our understanding of the physics of quantum dots and to aid the development of advanced nanoelectronics and quantum computing.

By Anand Chamarthy

Materials innovation has always been vital to the semiconductor industry. In the past, it was high-κ gate dielectrics. Today, Cobalt is seen as a replacement for Tungsten in middle-of-line (MOL) contacts.

What materials innovation will the future bring?

A likely answer is Graphene, the wonder material discovered in 2004.

Graphene is one atomic layer of carbon, the thinnest and strongest material that has ever existed. It is 200 times stronger than steel and the lightest material known to man (1 square meter weighing around 0.77 mg). It is an excellent electrical and thermal conductor at room temperature with an electron mobility of ~ 200,000

cm2.V-1.s-1. At one atomic layer, graphene is flexible and transparent. Other notable properties of Graphene are its uniform absorption of light across the visible and near infrared spectrum and its applicability towards spintronics-based devices.

Graphene and Moore’s Law

Moore’s Law scaling can be broken down into 4 key areas:

  • Lithography
  • FET
  • Advanced Packaging (2.5D and 3D IC)
  • Interconnect Material

Solutions for upcoming nodes are starting to emerge in the first two areas (EUV and Nanowire- or Nanosheet-based FET respectively). Graphene play an important role in the latter two areas. For advanced packaging, Graphene can be used as a heat spreader (to lower overall thermal resistance), or as an EM shield (to lower crosstalk) as part of a 3D IC package.

Active Graphene device layers can potentially be stacked on top of each other using a low-temperature transfer process (< 400°C) to allow for a dense heterogeneous “memory near compute” configuration. This is an area DARPA is actively researching as part of its new $1.5 billion Electronics Resurgence Initiative.

Regarding interconnects, Copper interconnects are running out of steam and becoming a major IC bottleneck (projected 40% total delay for 7 nm node). Graphene’s high electron mobility and thermal conductivity make it an attractive interconnect material for MOL and back-end-of-line (BEOL), especially at line widths < 30 nm.

Graphene Device Applications

Graphene-based semiconductor applications are already starting to hit the market. A fully integrated optical transceiver (with a Graphene modulator and photodetector) operating at 25 Gb/s/channel was on display at the recent Mobile World Congress in Barcelona. San Diego-based Nanomedical Diagnostics is selling a medical device that uses a Graphene biosensor. Europe-based Emberion is building Graphene optoelectronic sensors that might find a home in LIDAR applications, where there is currently a focus on improving sensing in low-light conditions.

What will the overall Graphene roadmap in the semiconductor industry look like? The history of ion implantation serves as a good example of how a fundamental scientific discovery moves from the lab to the foundry floor.

The dominant view in the semiconductor industry at the time was that ion implantation would not work in practice (vs. thermal diffusion) and that, if it did, it would only marginally improve the manufacturing yields of existing products. There was nothing obvious about the transfer of ion bombardment techniques from nuclear physics research to semiconductor production.

Varian (led by British physicist Peter Rose) built a new, advanced ion implant tool that Mostek (DRAM manufacturer based in Texas) was able to use to create MOS ICs with clear competitive advantages. The successful collaboration between Varian and Mostek was the turning point in the development of ion implantation as a major semiconductor manufacturing process. Over the next few years, semiconductor firms used ion implantation in a growing number of process steps and, by the late 1970s, it became one of the main processes used in semiconductor manufacturing.

Likewise, the Graphene world needs to work closely with the semiconductor industry to develop the tools and techniques required to solve fundamental issues around Graphene growth (good uniformity over large area, low defect density) and Graphene transfer (high throughput, CMOS compatible). It is only then will we fully realize a future that includes 2D materials.

The first step in this process is cross-industry education and initiating the dialogue between semiconductor industry and graphene companies. The National Graphene Association will be hosting the largest gathering of graphene companies and commercial stakeholders at the Global Graphene Expo & Conference, October 15-17, 2018, in Austin, Texas.

Learn more about graphene at the upcoming Global Graphene Expo & Conference with dedicated panels of experts and investors, and roundtable discussions on how Graphene will impact the semiconductor industry. The event promo code is SEMINGA.

About the Author

Anand Chamarthy is the CEO and Co-Founder of Lab 91, an Austin-based startup that is working towards Graphene/CMOS integration at the foundry level. Anand can be reached at [email protected].

About the National Graphene Association

The National Graphene Association is the main organization and body in the U.S. promoting and advocating for commercialization of graphene and addressing critical issues such as standards and policy development.

Originally published on the SEMI blog.

When 80 microns is enough


September 17, 2018

Should you care that scientists can control a baffling current? Their research results could someday affect your daily living.

Physicists have managed to send and control a spin current across longer distances than ever before – and in a material that was previously considered unsuitable for the task.

We’ll return to what that strange sentence really means. But a spin current is a current that is kept going without relying on a simultaneous current of electrical charges.

“We’ve transferred spins more than 80 microns in an antiferromagnet,” says Arne Brataas, a professor at the Norwegian University of Science and Technology’s (NTNU) Department of Physics, and head of the university’s recently launched Center for Quantum Spintronics (QuSpin).

Spin current is initiated with an electric field at one end of the material, an antiferromagnet. The spin in the antiferromagnet alternates direction (yellow and blue arrows). The signal spreads as a wave (green arrows) through the antiferromagnet. At the other end of the material, the spin current is transferred to an electric current again. Credit: Illustration: Kolbjørn Skarpnes/NTNU

Eighty microns – a mere 8/100 000th of a metre – is that so impressive?

“We’re not exactly sending signals to the other side of the city. But this is far in the world of nanoelectronics,” says Brataas.

Nanoelectronics forms the basis for all the smart technology we surround ourselves with.

Right about now you can start doing your happy dance. That’s because 80 microns is getting to be a great enough distance to matter to people besides the scientists who are interested in knowledge for its own sake.

QuSpin has been collaborating with international physicists, including several in Germany and the Netherlands. The results are so intriguing that they are being published in the latest issue of the journal Nature.

So what is spintronics?

The technology of the future may depend on spintronics. If you don’t know what it is, you might as well learn about it. But you can also jump ahead to the next section if you just want to learn about its practical uses.

Atoms have several parts. Electrons are the negatively charged particles, as many of us learned in science class.

But electrons don’t only have a charge, they also have spin, an apparent internal rotation.

The spin has a direction, which is the basis of magnetism. A ferromagnetic material has a preference to align the spins in one particular direction. These materials are the magnets that you put on the refrigerator door.

Antiferromagnetic materials are also magnetic, but you don’t notice their magnetic quality. The atoms in the material alternate between spins in opposite directions. These alterations effectively zero out the total spin so that the material itself does not have a magnetic moment. These materials don’t work on your refrigerator door.

How spins are organized can therefore have very clear consequences for how a material behaves. The spin can be exploited.

Magnetism can transfer signals

Brataas and his colleagues aren’t currently focusing so much on practical uses, so that’s up to us to do.

Today’s technology transmits signals in a computer’s microchips by means of an electric charge. In an electrical current, electrons and spin both flow through the material.

But in the future a spin current will be able do parts of the same job, using magnetism to transmit the signals instead, without electrons passing through with the current.

What are the benefits of spin currents?

Well, for one, a spin current can sometimes flow more readily than an electrical charge current, since only the spin moves and not the electrons. This results in less energy loss in transmitting the signal.

A spin current does not generate a lot of heat. As the transistors on microchips have become ever smaller, overheating has become a growing problem, causing microchips to melt. Using spin current means smaller transistors can be used -another practical feature as new electronic gizmos pop up everywhere.

Spin current can also be controlled much more quickly. So all the new gizmos can be a lot faster.

Controlling spin current

These results would not be nearly as exciting if physicists couldn’t control the spin current at the same time. But they can.

Physicists can start the spin current by applying an electric field at one end of the material. The signal flows through the material without the electrons moving from one end to the other.

Physicists can also do the opposite at the other end, and transfer the spin current to an electrical current.

They have managed to do this at temperatures approaching room temperature. Granted, 200 degrees Kelvin – or -73.15 degrees Celsius – is a bit chilly for a room, but it falls within the range of naturally occurring temperatures on Earth. The researchers expect that they will be able do this experiment at a more comfortable room temperature pretty soon as well.

The research group used the antiferromagnet hematite, an iron oxide (Fe2O3), in their experiments.

The results this time are clearly just a step along the way. The research team will continue to test other materials and look at how these materials respond to different types of influences.

High risk, but important

NTNU’s QuSpin was awarded Norwegian Centre of Excellence (SFF) status last year, a highly regarded recognition. The centre was created to combine theory with experimental physics in the spintronics field and can already show world-leading results.

“The centre focuses on high risk projects of major importance in many different directions,” says Brataas.

The status that SFF confers provides more stable research funding, since QuSpin is guaranteed support for ten years. The funding facilitates high-risk research that can fail too. And they do, all the time.

Many of their experiments do not match the theories or vice versa, and that is important in its own way. But some experiments are spot on, and they can have particularly great significance.

Mentor, a Siemens business, today announced LightSuite™ Photonic Compiler – the industry’s first integrated photonic automated layout system. This new tool enables companies designing integrated photonic layouts to describe designs in the Python language, from which the tool then automatically generates designs ready for fabrication. The resulting design is “Correct by Calibre” – with the implementation precisely guided by Mentor’s Calibre® RealTime Custom verification tool. LightSuite Photonic Compiler enables designers to generate as well as update large photonic layouts in minutes versus weeks.

With this breakthrough technology, companies can dramatically speed the development of integrated photonic designs that will bring speed-of-light communications directly into high-speed networking and high-performance computing (HPC) systems. It also speeds the development of more cost-effective LiDAR technology, which is seen as essential to enabling the mass deployment of autonomous vehicles.

“Mentor’s LightSuite Photonic Compiler represents a quantum leap in automating what has up to now been a highly manual, full-custom process that required deep knowledge of photonics as well as electronics,” said Joe Sawicki, vice president and general manager of the Design-to-Silicon Division at Mentor, a Siemens business. “With the new LightSuite Photonic Compiler, Mentor is enabling more companies to push the envelope in creating integrated photonic designs.”

“LightSuite Photonic Compiler fixes the biggest roadblocks preventing industry-wide adoption of electro-optical design and simulation of photonic chips,” said M. Ashkan Seyedi, Ph.D., senior research scientist, Hewlett Packard Enterprise. “Photonic chips promise amazing performance, but designing circuits today is just too difficult and requires specialized knowledge. LightSuite Photonic Compiler circumvents those challenges and enables scalability. I’m thrilled to have worked with Mentor to develop this tool to make it possible for anyone to design and build photonic circuits as easily as designing electronic circuits.”

Until now, photonic designers have been forced to use analog, full-custom IC tools to create photonic designs. In this flow, designers manually place components from a process design kit (PDK) and then interconnect those components manually. Photonic components must be interconnected with curved waveguides. After they have manually placed and interconnected the components, they typically perform a full Calibre physical verification run to check for design rule violations, as Calibre DRC can find violations even in photonic designs.

Mentor designed the new LightSuite Photonic Compiler specifically for photonic layout so that engineers have complete control of their layouts and can use the tool to automatically perform the placement and interconnecting of both photonic and electrical components. The designers create a Python script that is used to drive the LightSuite Photonic Compiler. Initial placement can also be defined in Python, or come from a pre-placed OpenAccess design. Next, the tool interconnects photonics components with curved wave guides. As some of the components might contain built-in electrical elements, the tool will route these electrical connections simultaneously along with the curved waveguides.

LightSuite Photonic Compiler uses Calibre RealTime Custom during the inner placement and routing loop, resulting in a layout that is design-rule correct. The tool enables designers to perform “what-if” design exploration for photonics designs, which was prohibitively time consuming with manual layout. With this new level of automation, designers can generate a new layout in minutes versus weeks for large designs.

Mentor will demonstrate LightSuite Photonic Compiler at ECOC in Rome, September 24 – 26 at Stand 436. LightSuite Photonic Compiler will be available on October 1.