Category Archives: MEMS

“The goal of The ConFab is to spark discussions” 

By PETE SINGER, Editor-in-Chief

The future of the semiconductor industry continues to shine brightly. Smart phones have become an everyday part of life the world over, and we will soon see a new explosion of demand brought about by thev“internet of things,” cloud computing, digital television, biomedical sensors and many other types of advance electronics. Many believe this capability is leading to the 4th industrial revolution.

The semiconductor industry’s ability to pack more and more functionality onto a single chip, many challenges remain. Some argue that we will soon reach the end of the road defined by Moore’s Law, pointing to higher costs per transistor. More complex device structures, such as the FinFET and Vertical NAND, have become mainstream, 3D integration with TSVs continue to make slow progress, and a wide variety of new materials are being put into play. The IoT could drive the need for low power, low cost and high levels of integration of diverse components.

The path forward is far from clear. But what is clear is that the need for collaboration has never been

greater. That’s what The ConFab 2015 is all about. We bring together executives from all parts of the supply chain for three days of thought provoking talks and panel discussions, networking events and in-depth, pre-arranged meetings. In 2015, we’ll be back at The Encore at The Wynn in Las Vegas, May 19-22. See www.theconfab.com for more information.

The goal of The ConFab is to spark discussions that will lead to faster resolution of problems, faster and broader industry expansion, and long-term collabora- tions among organizations of all types. In other words, our goal is to help The ConFab attendees “connect, collaborate and create”

Whenever we get together at The ConFab – which is now in its 11th year – I’m always reminded of a quote by Margaret Mead, “Never doubt that a small group of thoughtful, committed citizens can change the world; indeed, it’s the only thing that ever has.” Join as at The ConFab 2015 and you, too, can change the world.

The explosive expansion of the Internet of things (IoT) is driving rapid demand growth for microelectromechanical systems (MEMS) devices in areas including asset-tracking systems, smart grids and building automation.

Worldwide market revenue for MEMS directly used in industrial IoT equipment will rise to $120 million in 2018, up from $16 million in 2013, according to IHS Technology (NYSE: IHS). Additional MEMS also will be used to support the deployment of the IoT, such as devices employed in data centers. This indirect market for industrial IoT MEMS will increase to $214 million in 2018, up from $43 million in 2013.

The figure below presents the IHS forecast of global MEMS revenue from direct and indirect IoT uses.

Global market shipments for industrial IoT equipment are expected to expand to 7.3 billion units in 2025, up from 1.8 billion in 2013. The industrial IoT market is a diverse area, comprising equipment such as nodes, controllers and infrastructure, and used in markets ranging from building automation to commercial transport, smart cards, industrial automation, lighting and health. Such gear employs a range of MEMS device types including accelerometers, pressure sensors, timing components and microphones.

“The Internet of things is sometimes called the machine-to-machine (M2M) revolution, and one important class of machines—MEMS—will play an essential role in expansion of the boom of the industrial IoT segment in the coming years,” said Jeremie Bouchaud, director and senior principal analyst for MEMS and sensors at IHS. “MEMS sensors allow equipment to gather and digitize real-world data that then can be shared on the Internet. The IoT represents a major new growth opportunity for the MEMS market.”

More information on the topic can be found in the report entitled “Internet of Things begins to impact High-Value MEMS” from the MEMS & Sensors service of IHS.

Industrial IoT applications for MEMS

Building automation will generate the largest volumes for MEMS and other types of sensors in the industrial IoT market.

Asset tracking is the second-largest opportunity for sensors in industrial IoT. This segment will drive demand for large volumes of MEMS accelerometers and pressure sensors.

The smart grid also will require various types of MEMS, including inclinometers to monitor high-voltage power lines as well as accelerometers and flow sensors in smart meters.

Other major segments of the industrial IoT market include smart cities, smart factories, seismic monitoring, and drones and robotics.

MEMS types

Accelerometers and pressure sensors account for most of the MEMS shipments for direct industrial IoT applications in areas including building automation, agriculture and medical. MEMS timing devices in smart meters and microphones used in smart homes and smart cities will be next in terms of volume.

Indirect benefits

To support the deluge of data that IoT will generate, major investments will be required in the backbone infrastructure of the Internet, including data centers. This, in turn, will drive the indirect demand for MEMS used in such infrastructure.

Data centers will spur demand for optical MEMS, especially optical cross connects and wavelength selective switches. Big data operations also will require large quantities of integrated circuits (ICs) for memory. The testing of memory ICs makes use of MEMS wafer probe cards.

IoT Market

Worldwide semiconductor market revenue is on track to achieve a 9.4 percent expansion this year, with broad-based growth across multiple chip segments driving the best industry performance since 2010.

Global revenue in 2014 is expected to total $353.2 billion, up from $322.8 billion in 2013, according to a preliminary estimate from IHS Technology (NYSE: IHS). The nearly double-digit-percentage increase follows respectable growth of 6.4 percent in 2013, a decline of more than 2.0 percent in 2012 and a marginal increase of 1.0 percent in 2011. The performance in 2014 represents the highest rate of annual growth since the 33 percent boom of 2010.

“This is the healthiest the semiconductor business has been in many years, not only in light of the overall growth, but also because of the broad-based nature of the market expansion,” said Dale Ford, vice president and chief analyst at IHS Technology. “While the upswing in 2013 was almost entirely driven by growth in a few specific memory segments, the rise in 2014 is built on a widespread increase in demand for a variety of different types of chips. Because of this, nearly all semiconductor suppliers can enjoy good cheer as they enter the 2014 holiday season.”

More information on this topic can be found in the latest release of the Competitive Landscaping Tool from the Semiconductors & Components service at IHS.

Widespread growth

Of the 28 key sub-segments of the semiconductor market tracked by IHS, 22 are expected to expand in 2014. In contrast, only 12 sub-segments of the semiconductor industry grew in 2013.

Last year, the key drivers of the growth of the semiconductor market were dynamic random access memory (DRAM) and data flash memory. These two memory segments together grew by more than 30 percent while the rest of the market only expanded by 1.5 percent.

This year, the combined revenue for DRAM and data flash memory is projected to rise about 20 percent. However, growth in the rest of the market will swell by 6.7 percent to support the overall market increase of 9.4 percent.

In 2013, only eight semiconductor sub-segments grew by 5 percent or more and only three achieved double-digit growth. In 2014, over half of all the sub-segments—i.e., 15—will grow by more than 5 percent and eight markets will grow by double-digit percentages.

This pervasive growth is delivering general benefits to semiconductor suppliers, with 70 percent of chipmakers expected to enjoy revenue growth this year, up from 53 percent in 2013.

The figure below presents the growth of the DRAM and data flash segments compared to the rest of the semiconductor market in 2013 and 2014.

2014-12-18_Semi_Sectors_Growth

Semiconductor successes

The two market segments enjoying the strongest and most consistent growth in the last two years are DRAM and light-emitting diodes (LEDs). DRAM revenue will climb 33 percent for two years in a row in 2013 and 2014. This follows often strong declines in DRAM revenue in five of the last six years.

The LED market is expected to grow by more than 11 percent in 2014. This continues an unbroken period of growth for LED revenues stretching back at least 13 years.

Major turnarounds are occurring in the analog, discrete and microprocessor markets as they will swing from declines to strong growth in every sub-segment. Most segments will see their growth improve by more than 10 percent, compared to the declines experienced in 2013.

Furthermore, programmable logic device (PLD) and digital signal processor (DSP) application-specific integrated circuits (ASICs) will experience dramatic improvements in growth. PLD revenue in 2014 will grow by 10.2 percent compared to 2.1 percent in 2013, and DSP ASICs will rise by 3.8 percent compared to a 31.9 percent collapse in 2013.

Moving on up

Among the top 20 semiconductor suppliers, MediaTek and Avago Technologies attained the largest revenue growth and rise in the rankings in 2014. Both companies benefited from significant acquisitions.

MediaTek is expected to jump up five places to the 10th rank and become the first semiconductor company headquartered in Taiwan to break into the Top 10. Avago Technologies is projected to jump up eight positions in the rankings to No. 15.

The strongest growth by a semiconductor company based purely on organic revenue increase is expected to be achieved by SK Hynix, with projected growth of nearly 23 percent.

No. 13-ranked Infineon has announced its plan to acquire International Rectifier. If that acquisition is finalized in 2014 the combined companies would jump to No. 10 in the overall rankings and enjoy 16 percent combined growth.

The table below presents the preliminary IHS ranking of the world’s top 20 semiconductor suppliers in 2013 and 2014 based on revenue.

2014-12-18_Semi_Ranking_Final

Troubles for consumer electronics and Japan

Semiconductor revenue in 2014 will grow in five of the six major semiconductor application end markets, i.e. data processing, wired communications, wireless communications, automotive electronics and industrial electronics. The only market segment experiencing a decline will be consumer electronics. Revenue will expand by double-digit percentages in four of the six markets.

Japan continues to struggle, and is the only worldwide region that will see a decline in semiconductor revenues this year. The other three geographies—Asia-Pacific, the Americas and the Europe, Middle East and Africa (EMEA) region—will see healthy growth. The world will be led by led by Asia-Pacific which will post an expected revenue increase of 12.5 percent.

In a sub-basement deep below the Laboratory for Integrated Science and Engineering at Harvard University, Mikhail Kats gets dressed. Mesh shoe covers, a face mask, a hair net, a pale gray jumpsuit, knee-high fabric boots, vinyl gloves, safety goggles, and a hood with clasps at the collar–these are not to protect him, Kats explains, but to protect the delicate equipment and materials inside the cleanroom.

While earning his Ph.D. in applied physics at the Harvard School of Engineering and Applied Sciences, Kats has spent countless hours in this cutting-edge facility. With his adviser, Federico Capasso, the Robert L. Wallace Professor of Applied Physics and Vinton Hayes Senior Research Fellow in Electrical Engineering, Kats has contributed to some stunning advances.

One is a metamaterial that absorbs 99.75 percent of infrared light–very useful for thermal imaging devices. Another is an ultrathin, flat lens that focuses light without imparting the distortions of conventional lenses. And the team has produced vortex beams, light beams that resemble a corkscrew, that could help communications companies transmit more data over limited bandwidth.

Certainly the most colorful advance to emerge from the Capasso lab, however, is a technique that coats a metallic object with an extremely thin layer of semiconductor, just a few nanometers thick. Although the semiconductor is a steely gray color, the object ends up shining in vibrant hues. That’s because the coating exploits interference effects in the thin films; Kats compares it to the iridescent rainbows that are visible when oil floats on water. Carefully tuned in the laboratory, these coatings can produce a bright, solid pink–or, say, a vivid blue–using the same two metals, applied with only a few atoms’ difference in thickness.

Capasso’s research group announced the finding in 2012, but at that time, they had only demonstrated the coating on relatively smooth, flat surfaces like silicon. This fall, the group published a second paper, in the journal Applied Physics Letters, taking the work much further.

“I cut a piece of paper out of my notebook and deposited gold and germanium on it,” Kats says, “and it worked just the same.”

That finding, deceptively simple given the physics involved, now suggests that the ultrathin coatings could be applied to essentially any rough or flexible material, from wearable fabrics to stretchable electronics.

“This can be viewed as a way of coloring almost any object while using just a tiny amount of material,” Capasso says.

It was not obvious that the same color effects would be visible on rough substrates, because interference effects are usually highly sensitive to the angle of light. And on a sheet of paper, Kats explains, “There are hills and valleys and fibers and little things sticking out–that’s why you can’t see your reflection in it. The light scatters.”

On the other hand, the applied films are so extremely thin that they interact with light almost instantaneously, so looking at the coating straight on or from the side–or, as it turns out, looking at those rough imperfections in the paper–doesn’t make much difference to the color. And the paper remains flexible, as usual.

Demonstrating the technique in the cleanroom at the Center for Nanoscale Systems, a National Science Foundation-supported research facility at Harvard, Kats uses a machine called an electron beam evaporator to apply the gold and germanium coating. He seals the paper sample inside the machine’s chamber, and a pump sucks out the air until the pressure drops to a staggering 10^-6 Torr (a billionth of an atmosphere). A stream of electrons strikes a piece of gold held in a carbon crucible, and the metal vaporizes, traveling upward through the vacuum until it hits the paper. Repeating the process, Kats adds the second layer. A little more or a little less germanium makes the difference between indigo and crimson.

This particular lab technique, Kats points out, is unidirectional, so to the naked eye very subtle differences in the color are visible at different angles, where slightly less of the metal has landed on the sides of the paper’s ridges and valleys. “You can imagine decorative applications where you might want something that has a little bit of this pearlescent look, where you look from different angles and see a different shade,” he notes. “But if we were to go next door and use a reactive sputterer instead of this e-beam evaporator, we could easily get a coating that conforms to the surface, and you wouldn’t see any differences.”

Many different pairings of metal are possible, too. “Germanium’s cheap. Gold is more expensive, of course, but in practice we’re not using much of it,” Kats explains. Capasso’s team has also demonstrated the technique using aluminum.

“This is a way of coloring something with a very thin layer of material, so in principle, if it’s a metal to begin with, you can just use 10 nanometers to color it, and if it’s not, you can deposit a metal that’s 30 nm thick and then another 10nm. That’s a lot thinner than a conventional paint coating that might be between a micron and 10 microns thick.”

In those occasional situations where the weight of the paint matters, this could be very significant. Capasso remembers, for example, that the external fuel tank of NASA’s space shuttle used to be painted white. After the first two missions, engineers stopped painting it and saved 600 pounds of weight.

Because the metal coatings absorb a lot of light, reflecting only a narrow set of wavelengths, Capasso suggests that they could also be incorporated into optoelectronic devices like photodetectors and solar cells.

“The fact that these can be deposited on flexible substrates has implications for flexible and maybe even stretchable optoelectronics that could be part of your clothing or could be rolled up or folded,” Capasso says.

Harvard’s Office of Technology Development continues to pursue commercial opportunities for the new color coating technology and welcomes contact from interested parties.

Kats, who concludes his year-long postdoctoral research position at SEAS this month, will become an assistant professor at the University of Wisconsin, Madison, in January. He credits those many hours spent in Harvard’s state-of-the-art laboratory facilities for much of his success in applied physics.

“You learn so much while you’re doing it,” Kats says. “You can be creative, discover something along the way, apply something new to your research. It’s marvelous that we have students and postdocs down here making things.”

A door has been opened to low-power off/on switches in micro-electro-mechanical systems (MEMS) and nanoelectronic devices, as well as ultrasensitive bio-sensors, with the first observation of piezoelectricity in a free standing two-dimensional semiconductor by a team of researchers with the U.S. Department of Energy (DOE)’s Lawrence Berkeley National Laboratory (Berkeley Lab).

Xiang Zhang, director of Berkeley Lab’s Materials Sciences Division and an international authority on nanoscale engineering, led a study in which piezoelectricity – the conversion of mechanical energy into electricity or vice versa – was demonstrated in a free standing single layer of molybdenum disulfide, a 2D semiconductor that is a potential successor to silicon for faster electronic devices in the future.

“Piezoelectricity is a well-known effect in bulk crystals, but this is the first quantitative measurement of the piezoelectric effect in a single layer of molecules that has intrinsic in-plane dipoles,” Zhang says. “The discovery of piezoelectricity at the molecular level not only is fundamentally interesting, but also could lead to tunable piezo-materials and devices for extremely small force generation and sensing.”

Zhang, who holds the Ernest S. Kuh Endowed Chair at the University of California (UC) Berkeley and is a member of the Kavli Energy NanoSciences Institute at Berkeley, is the corresponding author of a paper in Nature Nanotechnology describing this research. The paper is titled “Observation of Piezoelectricity in Free-standing Monolayer MoS2.” The co-lead authors are Hanyu Zhu and Yuan Wang, both members of Zhang’s UC Berkeley research group. (See below for a complete list of co-authors.)

Since its discovery in 1880, the piezoelectric effect has found wide application in bulk materials, including actuators, sensors and energy harvesters. There is rising interest in using nanoscale piezoelectric materials to provide the lowest possible power consumption for on/off switches in MEMS and other types of electronic computing systems. However, when material thickness approaches a single molecular layer, the large surface energy can cause piezoelectric structures to be thermodynamically unstable.

Over the past couple of years, Zhang and his group have been carrying out detailed studies of molybdenum disulfide, a 2D semiconductor that features high electrical conductance comparable to that of graphene, but, unlike graphene, has natural energy band-gaps, which means its conductance can be switched off.

“Transition metal dichalcogenides such as molybdenum disulfide can retain their atomic structures down to the single layer limit without lattice reconstruction, even in ambient conditions,” Zhang says. “Recent calculations predicted the existence of piezoelectricity in these 2D crystals due to their broken inversion symmetry. To test this, we combined a laterally applied electric field with nano-indentation in an atomic force microscope for the measurement of piezoelectrically-generated membrane stress.”

Zhang and his group used a free-standing molybdenum disulfide single layer crystal to avoid any substrate effects, such as doping and parasitic charge, in their measurements of the intrinsic piezoelectricity. They recorded a piezoelectric coefficient of 2.9×10-10 C/m, which is comparable to many widely used materials such as zinc oxide and aluminum nitride.

“Knowing the piezoelectric coefficient is important for designing atomically thin devices and estimating their performance,” says Nature paper co-lead author Zhu. “The piezoelectric coefficient we found in molybdenum disulfide is sufficient for use in low-power logic switches and biological sensors that are sensitive to molecular mass limits.”

Zhang, Zhu and their co-authors also discovered that if several single layers of molybdenum disulfide crystal were stacked on top of one another, piezoelectricity was only present in the odd number of layers (1,3,5, etc.)

“This discovery is interesting from a physics perspective since no other material has shown similar layer-number sensitivity,” Zhu says. “The phenomenon might also prove useful for applications in which we want devices consisting of as few as possible material types, where some areas of the device need to be non-piezoelectric.”

In addition to logic switches and biological sensors, piezoelectricity in molybdenum disulfide crystals might also find use in the potential new route to quantum computing and ultrafast data-processing called “valleytronics.” In valleytronics, information is encoded in the spin and momentum of an electron moving through a crystal lattice as a wave with energy peaks and valleys.

“Some types of valleytronic devices depend on absolute crystal orientation, and piezoelectric anisotropy can be employed to determine this,’ says Nature paper co-lead author Wang. “We are also investigating the possibility of using piezoelectricity to directly control valleytronic properties such as circular dichroism in molybdenum disulfide.”

By DAVE HEMKER, Senior Vice President and Chief Technology Officer, Lam Research Corp.

Given the current buzz around the Internet of Things (IoT), it is easy to lose sight of the challenges
– both economic and technical. On the economic side is the need to cost-effectively manufacture up to a trillion sensors used to gather data, while on the technical side, the challenge involves building out the infrastructure. This includes enabling the transmission, storage, and analysis of volumes of data far exceeding anything we see today. These divergent needs will drive the semiconductor equipment industry to provide very different types of manufacturing solutions to support the IoT.

In order to fulfill the promise of the IoT, sensor technology will need to become nearly ubiquitous in our businesses, homes, electronic products, cars, and even our clothing. Per-unit costs for sensors will need to be kept very low to ensure the technology is economically viable. To support this need, trailing-edge semiconductor manufacturing capabilities provide a viable option since fully depreciated wafer processing equipment can produce chips cost efficiently. For semiconductor equipment suppliers, this translates into additional sales of refurbished and productivity-focused equipment and upgrades that improve yield, throughput, and running costs. In addition to being produced inexpensively, sensors intended for use in the IoT will need to meet several criteria. First, they need to operate on very low amounts of power. In fact, some may even be self-powered via MEMS (microelectromechanical systems)-based oscillators or the collection of environmental radio frequency energy, also known as energy harvesting/scavenging. Second, they will involve specialized functions, for example, the ability to monitor pH or humidity. Third, to enable the transmission of data collected to the supporting infrastructure, good wireless communications capabilities will be important. Finally, sensors will need to be small, easily integrated into other structures – such as a pane of glass, and available in new form factors – like flexible substrates for clothing. Together, these new requirements will drive innovation in chip technology across the semiconductor industry’s ecosystem.

The infrastructure needed to support the IoT, in contrast, will require semiconductor performance to continue its historical advancement of doubling every 18-24 months. Here, the challenges are a result of the need for vast amounts of networking, storage in the Cloud, and big data analysis. Additionally, many uses for the IoT will involve risks far greater than those that exist in today’s internet. With potential medical and transportation applications, for example, the results of data analysis performed in real time can literally be a matter of life or death. Likewise, managing the security and privacy of the data being generated will be paramount. The real-world nature of things also adds an enormous level of complexity in terms of predictive analysis.

Implementing these capabilities and infrastructure on the scale imagined in the IoT will require far more powerful memory and logic devices than are currently available. This need will drive the continued extension of Moore’s Law and demand for advanced semiconductor manufacturing capability, such as atomic-scale wafer processing. Controlling manufacturing process variability will also become increasingly important to ensure that every device in the new, interconnected world operates as expected.

With development of the IoT, semiconductor equipment companies can look forward to opportunities beyond communications and computing, though the timing of its emergence is uncertain. For wafer processing equipment suppliers in particular, new markets for leading-edge systems used in the IoT infrastructure and productivity-focused upgrades for sensor manufacturing are expected to develop.

The most expensive defect


December 18, 2014

Defects that aren’t detected inline cost fabs the most. 

By DAVID W. PRICE and DOUGLAS G. SUTHERLAND, KLA-Tencor, Milpitas, CA

Defect inspection tools can be expensive. But regardless of the cost of the inspection tool needed to find a defect, the fab is almost always better off financially if it can find and fix that defect inline versus at the end of line (e.g., electrical test and failure analysis). Here, we are referring to the term defect in a general sense—the same concepts also apply to metrology measurements.

The third fundamental truth of process control for the semiconductor IC industry is:

The most expensive defect is the one that wasn’t detected inline.

FIGURE 1A (top) shows an imaginary SPC chart for a factory experiencing a baseline shift in defectivity (an excursion) beginning at Lot #300. FIGURE 1B (bottom) shows the same scenario except the fab has an effective inline monitor at the point of the excursion. In this case, the excursion is quickly identified and the offending process tool is taken offline for process tuning or maintenance. The excursion is contained and relatively few lots are impacted by the resulting yield loss.

Defects 1a

FIGURE 1. It is always better to find and fix problems inline versus at the end of line. 1a. Problem identification and correction does not occur until bad wafers reach end-of-line test. 1b. Problem identification and correction occurs immediately.

FIGURE 1. It is always better to find and fix problems inline versus at the end of line. 1a. Problem identification and correction does not occur until bad wafers reach end-of-line test. 1b. Problem identification and correction occurs immediately.

The difference between these two scenarios is that in the top chart, the fab is unable to detect the excursion inline so the baseline shift continues unabated until the first affected lots hit end of line test. For a foundry process with a 60-day cycle time, this delay could easily exceed 20 days.

In our experience working with IC manufacturers, the majority of financial impact does not come from large excursions that cause significant yield loss to every affected wafer—those problems are usually identified and rectified very early on. Rather, the largest losses usually come from small excursions that are difficult to detect. They cause relatively low levels of yield loss but persist for prolonged periods of time. It is not uncommon to see thousands or even tens of thousands of wafers exposed to these low level excursions.

The culprit is nearly always a process control capability issue that can be traced back to one or more possible problems. The following list is not meant to be exhaustive, but is instead, representative of the most common causes:

Defects 2

FIGURE 2. Cost vs. mean time to detection (MTTD) of finding a defect inline. The curves are drawn for 4 different wafer costs in a fab with 100k WSPM. It is assumed that the excursion takes place at a single step in the process and happens once per year to each of the process tools at that step. The yield loss is assumed to be 20% during the excursion.

  • Insufficient number of inspection points to allow effective isolation of the defect source.
  • Failing to use a sensitive enough inspection tool or recipe (pixel size is too large, wrong wavelength,
  • etc.)
  • Inspection area of wafer is too low.
  • Review sample size is too small.

Often, the original inspection strategy was carefully designed, but as time passed, changes were made to reduce costs. As new sources of noise are introduced in the SPC chart, the fab becomes less sensitive to small excursions.

FIGURE 2 shows the economic impact to the fab for the two scenarios shown by the SPC chart in FIGURE 1. Imagine an excursion which results in a net 25 percent yield loss (e.g., one out of four wafers must be scrapped). Finding that excursion at end-of-line (+30 days) versus inline (greater than one day) would amount to a staggering $21 million loss per occurrence for an average size run rate of 25k wafer starts per month. Given that this value only repre- sents the cost of re-manufacturing the scrapped wafers it could actually be a conservative estimate. The true cost could easily be double that amount for a fab that is running at the limit of their capacity since it would directly impact revenue.

Even if the situation requires the use of a relatively expensive inspection tool to find, monitor and resolve the problem, it is nearly always in the factory’s best interest to do so. One of the implications of this truth is that if an important defect type can only be detected by a certain inspection tool, then that inspection tool is almost always the most cost-effective solution for that layer. Rather than modifying process control strategies to save costs, it is nearly always in the factory’s best interest to maintain capable, inline process control strategies that prevent the financial impact of ‘the most expensive defect.’

Author’s Note: This is the third in a series of 10 installments that explore fundamental truths about process control—defect inspection and metrology—for the semiconductor industry. Each article introduces one of the 10 fundamental truths and highlights their implications.

Read more Process Watch:

Process Watch: Fab managers don’t like surprises

Process Watch: The 10 fundamental truths of process control for the semiconductor IC industry

Process Watch: Exploring the dark side

The Dangerous Disappearing Defect,” “Skewing the Defect Pareto,” “Bigger and Better Wafers,” “Taming the Overlay Beast,” “A Clean, Well-Lighted Reticle,” “Breaking Parametric Correlation,” “Cycle Time’s Paradoxical Relationship to Yield,” and “The Gleam of Well-Polished Sapphire.”

 

North America-based manufacturers of semiconductor equipment posted $1.22 billion in orders worldwide in November 2014 (three-month average basis) and a book-to-bill ratio of 1.02, according to the November EMDS Book-to-Bill Report published today by SEMI.   A book-to-bill of 1.02 means that $102 worth of orders were received for every $100 of product billed for the month.

The three-month average of worldwide bookings in November 2014 was $1.22 billion. The bookings figure is 10.4 percent higher than the final October 2014 level of $1.10 billion, and is 1.7 percent lower than the November 2013 order level of $1.24 billion.

The three-month average of worldwide billings in November 2014 was $1.19 billion. The billings figure is 0.5 percent higher than the final October 2014 level of $1.18 billion, and is 6.8 percent higher than the November 2013 billings level of $1.11 billion.

“”With the rise in bookings, the book-to-bill ratio climbed above parity in November,”” said SEMI president and CEO Denny McGuirk. “”2014 has been a solid growth year for the semiconductor equipment market, and we expect the foundry and memory sector to continue leading investments in 2015.””

The SEMI book-to-bill is a ratio of three-month moving averages of worldwide bookings and billings for North American-based semiconductor equipment manufacturers. Billings and bookings figures are in millions of U.S. dollars.

Billings
(3-mo. avg)

Bookings
(3-mo. avg)

Book-to-Bill

June 2014 

$1,327.5

$1,455.0

1.10

July 2014 

$1,319.1

$1,417.1

1.07

August 2014 

$1,293.4

$1,346.1

1.04

September 2014 

$1,256.5

$1,186.2

0.94

October 2014 (final)

$1,184.2

$1,102.3

0.93

November 2014 (prelim)

$1,189.8

$1,217.1

1.02

Source: SEMI, December 2014

At this week’s IEDM 2014, held in San Francisco, California, nanoelectronics research center imec demonstrated an ultra-low power RFID transponder chip. Operating at sub 1V voltage and realized in thin-film transistor technology (TFTs) on plastic film, the chip paves the way for universal sensing applications, such as item level RFID tagging, body area networks (BAN) and environmental monitoring, that require prolonged remote autonomy, and ultimate thinness, flexibility and robustness.

One of the major drivers of the semiconductor industry is the Internet of Things (IoT). Market studies envision a society where billions of autonomous sensor nodes are seamlessly integrated into objects, in the environment and on human bodies, operating independently for months, interacting with each other and connecting to the internet. This IoT is expected to improve and enhance daily-lives through smart houses and smart cars, personal health monitoring and much more. Companies across the electronics value chain are rushing to define their vision and strategy and determine how this IoT fits into their product roadmap.

To enable this IoT vision, imec is leveraging its expertise in thin-film electronics, ultra-low power electronics and sensing, in this way tackling the technology roadblocks for universal sensing applications that lie ahead. The teamdemonstrated an 8-bit transponder chip made in thin-film transistor technology. The chip operates at a supply voltage of 0.55V while consuming only 2.5µW. A commercial AAA battery could power the chip for more than 20 years. Moreover, processed on a 25µm thin foil in a process flow compatible to a commodity manufacturing infrastructure (flat panel display fabs), the chip addresses the issue of cost and mechanical flexibility, thinness and robustness. The chip can be embedded in security documents, smart packaging, disposable electronics or textiles.

The research is done in the framework of Holst Centre’s (initiated by imec and TNO) industrial affiliation program on thin-film electronics and with support from the EU through the project COSMIC that developed complimentary thin film circuit technologies on foil for applications like gate driver for flexible displays, ADC, ALU and RFID tags

Daintree Networks has been named by CIO Review Magazine as one of the ’50 Most Promising Internet of Things (IoT) Companies 2014.’ The list features the best vendors and consultants providing technologies and services related to IoT. In the same issue, Daintree Networks CEO Danny Yu was featured as the ‘Entrepreneur of the Month,’ which highlights his career path and leadership of Daintree Networks to becoming a prominent player in the Enterprise-IoT market and top provider of wireless mesh networking solutions for smart buildings.

A distinguished panel comprised of CEOs, CIOs, CTOs, and analysts including the CIO Review editorial board determined the list of top companies at the forefront of tackling challenges in the Internet of Things market in the U.S. “We are happy to showcase Daintree Networks as a top IoT company due to the success of its ControlScope solution in advancing the IoT landscape for commercial entities,” said Harvi Sachar, publisher and founder, CIO Review. “Daintree’s dedication to true open standards-based solutions continues to break down adoption barriers and provides significant cost advantages to its customers. We’re excited to have them on our top IoT companies list, and to feature Daintree’s leadership, CEO Danny Yu, as the ‘Entrepreneur of the Month.'”

“We are honored to be recognized by CIO Review Magazine as one of the top ’50 Most Promising IoT Companies for 2014,'” said Danny Yu, Daintree Networks CEO. “This distinction reinforces the success of our Enterprise Internet of Things,(E-IoT) approach, which leverages our true open standards-based solutions to provide cost-effective wireless mesh networking for smart buildings. In addition, as ‘Entrepreneur of the Month,’ I appreciate the recognition, but the credit goes to the dedicated, forward-thinking employees of the company who are driving our explosive growth.”