Category Archives: MEMS

Researchers at MIT and Texas Instruments have developed a new type of radio frequency identification (RFID) chip that is virtually impossible to hack.

If such chips were widely adopted, it could mean that an identity thief couldn’t steal your credit card number or key card information by sitting next to you at a café, and high-tech burglars couldn’t swipe expensive goods from a warehouse and replace them with dummy tags.

Texas Instruments has built several prototypes of the new chip, to the researchers’ specifications, and in experiments the chips have behaved as expected. The researchers presented their research this week at the International Solid-State Circuits Conference, in San Francisco.

According to Chiraag Juvekar, a graduate student in electrical engineering at MIT and first author on the new paper, the chip is designed to prevent so-called side-channel attacks. Side-channel attacks analyze patterns of memory access or fluctuations in power usage when a device is performing a cryptographic operation, in order to extract its cryptographic key.

“The idea in a side-channel attack is that a given execution of the cryptographic algorithm only leaks a slight amount of information,” Juvekar says. “So you need to execute the cryptographic algorithm with the same secret many, many times to get enough leakage to extract a complete secret.”

One way to thwart side-channel attacks is to regularly change secret keys. In that case, the RFID chip would run a random-number generator that would spit out a new secret key after each transaction. A central server would run the same generator, and every time an RFID scanner queried the tag, it would relay the results to the server, to see if the current key was valid.

Blackout

Such a system would still, however, be vulnerable to a “power glitch” attack, in which the RFID chip’s power would be repeatedly cut right before it changed its secret key. An attacker could then run the same side-channel attack thousands of times, with the same key. Power-glitch attacks have been used to circumvent limits on the number of incorrect password entries in password-protected devices, but RFID tags are particularly vulnerable to them, since they’re charged by tag readers and have no onboard power supplies.

Two design innovations allow the MIT researchers’ chip to thwart power-glitch attacks: One is an on-chip power supply whose connection to the chip circuitry would be virtually impossible to cut, and the other is a set of “nonvolatile” memory cells that can store whatever data the chip is working on when it begins to lose power.

For both of these features, the researchers — Juvekar; Anantha Chandrakasan, who is Juvekar’s advisor and the Vannevar Bush Professor of Electrical Engineering and Computer Science; Hyung-Min Lee, who was a postdoc in Chandrakasan’s group when the work was done and is now at IBM; and TI’s Joyce Kwong, who did her master’s degree and PhD with Chandrakasan — use a special type of material known as a ferroelectric crystals.

As a crystal, a ferroelectric material consists of molecules arranged into a regular three-dimensional lattice. In every cell of the lattice, positive and negative charges naturally separate, producing electrical polarization. The application of an electric field, however, can align the cells’ polarization in either of two directions, which can represent the two possible values of a bit of information.

When the electric field is removed, the cells maintain their polarization. Texas Instruments and other chip manufacturers have been using ferroelectric materials to produce nonvolatile memory, or computer memory that retains data when it’s powered off.

Complementary capacitors

A ferroelectric crystal can also be thought of as a capacitor, an electrical component that separates charges and is characterized by the voltage between its negative and positive poles. Texas Instruments’ manufacturing process can produce ferroelectric cells with either of two voltages: 1.5 volts or 3.3 volts.

The researchers’ new chip uses a bank of 3.3-volt capacitors as an on-chip energy source. But it also features 571 1.5-volt cells that are discretely integrated into the chip’s circuitry. When the chip’s power source — the external scanner — is removed, the chip taps the 3.3-volt capacitors and completes as many operations as it can, then stores the data it’s working on in the 1.5-volt cells.

When power returns, before doing anything else the chip recharges the 3.3-volt capacitors, so that if it’s interrupted again, it will have enough power to store data. Then it resumes its previous computation. If that computation was an update of the secret key, it will complete the update before responding to a query from the scanner. Power-glitch attacks won’t work.

Because the chip has to charge capacitors and complete computations every time it powers on, it’s somewhat slower than conventional RFID chips. But in tests, the researchers found that they could get readouts from their chips at a rate of 30 per second, which should be more than fast enough for most RFID applications.

The health of the IC industry is increasingly tied to the health of the worldwide economy. Rarely can there be strong IC market growth without at least a “good” worldwide economy to support it. Consequently, IC Insights expects annual global IC market growth rates to closely track the performance of worldwide GDP growth. In the recently released The McClean Report 2016, IC Insights forecasts 2.7% global GDP growth for 2016, only marginally ahead of what is considered to be the recession threshold of 2.5% growth.

Figure 1 puts the worldwide electronics and semiconductor industries into perspective. The top figure, worldwide GDP, represents all global economic activity. Essentially, the worldwide total available market (TAM) for business (i.e., GDP) was $78.4 trillion in 2015.

In many areas of the world, local economies have slowed. For example, economic growth in China slipped below 7% in 2015. China, which is the leading market for personal computers, digital TVs, smartphones, new commercial aircraft, and automobiles, is forecast to lose more economic momentum in 2016. Its GDP is forecast to increase 6.3% in 2016, which continues a slide in that country’s annual GDP growth rate that started in 2010.

While the U.S. economy is far from perfect, it is currently one of the most significant positive driving forces in the worldwide economy. The U.S. accounted for 22% of worldwide GDP in 2015. U.S. GDP is forecast to grow 2.5% in 2016. Given its size and strength, the U.S. economy greatly influences overall global GDP growth. An improving employment picture and the low price of oil are factors that should positively impact the U.S. economy in 2016.

Other noteworthy industry highlights from the 2016 edition of The McClean Report include the following:

Global semiconductor sales decreased 1% in 2015 but are forecast to grow 4% in 2016. IC Insights expects the worldwide IC market to increase 4% in 2016, and sales of optoelectronics, sensors, and discrete (OSD) devices collectively to register 5% growth.

Figure 1

Figure 1

• Total semiconductor unit shipments (including IC and OSD devices) reached almost 840-billion units in 2015 and are expected to exceed one trillion units in 2018. After increasing 4% in 2015, IC unit shipments are forecast to grow 5% in 2016. Analog devices are forecast to account for 53% of total IC unit shipments in 2016.

• A stable IC pricing environment is expected through 2020 due in part to fewer suppliers in various IC markets (i.e., DRAM, MPU, etc.), lower capital spending as a percent of sales, and no significant new IC manufacturers entering the market in the future (the surge of Chinese IC companies that entered the market in the early 2000’s is assumed to be the last large group of newcomers.

Semiconductor industry capital spending grew to $65.9 billion in 2015. IC Insights forecasts semiconductor capital spending will decrease 1% in 2016. Spending on flash memory and within the foundry segment is forecast to increase in 2016 but spending for all other market segments, including DRAM, is expected to decline. Semiconductor capital spending as a percent of sales is forecast to remain in the mid- to high-teens range through 2020. IC Insights believes spending at this level will not lead to an industry-wide overcapacity during the forecast period.

Semiconductor R&D spending increased 1% in 2015 to new record high of $56.4 billion. Intel dedicated $12.1 billion to R&D in 2015 (24.0% of sales) to remain the largest semiconductor R&D spender in 2015. R&D spending at TSMC, the industry’s biggest pure-play foundry rose 10% in 2015, ranking it 5th among top R&D spenders. TSMC joined the group of top-10 R&D spenders for the first time in 2010, giving an indication of just how important TSMC and other pure-play foundries have become to the IC industry with continuing technological progress.

Further trends and analysis relating to the IC market are covered in the main 400-plus page 2016 edition of The McClean Report.

Gartner, Inc. forecasts that 274.6 million wearable electronic devices will be sold worldwide in 2016, an increase of 18.4 percent from 232.0 million units in 2015 (see Table 1). Sales of wearable electronic devices will generate revenue of $28.7 billion in 2016. Of that, $11.5 billion will be from smartwatches.

“From 2015 through 2017, smartwatch adoption will have 48 percent growth largely due to Apple popularizing wearables as a lifestyle trend. Smartwatches have the greatest revenue potential among all wearables through 2019, reaching $17.5 billion,” said Angela McIntyre, research director at Gartner. “Though the sales of smartwatches are the one of the strongest types of wearables, their adoption will remain much below sales of smartphones. For example, in 2016 more than 374 million smartphones will sell in mature market countries and in large urban areas of emerging market countries, for example, in Hong Kong and Singapore.”

Table 1: Forecast for Wearable Devices Worldwide (Millions of Units)

Device

2015

2016

2017

Smartwatch

30.32

50.40

66.71

Head-mounted display

0.14

1.43

6.31

Body-worn camera

0.05

0.17

1.05

Bluetooth headset

116.32

128.50

139.23

Wristband

30.15

34.97

44.10

Smart garment

0.06

1.01

5.30

Chest strap

12.88

13.02

7.99

Sports watch

21.02

23.98

26.92

Other fitness monitor

21.07

21.11

25.08

Total

232.01

274.59

322.69

Source: Gartner (January 2016)

Fitness wearables — which include wristbands, smart garments, chest straps, sports watches and other fitness monitors — continue to increase in popularity, driven in some part by U.S. wellness programs.

“Of all the fitness wearables, sports watches will be the one product category to maintain its average retail price over the next several years,” said Ms. McIntyre. “Race runners, cyclists and divers will choose sports watches over smartwatches because the user interface, capabilities and durability are tailored to the needs of an athlete in their sport. Continued advances in sensors and analytics for sports watches will bring new capabilities that bolster average retail prices.”

Although the size of the worldwide wristband market was on par with the unit sales of smartwatches in 2015, looking forward smartwatches will have stronger appeal with consumers as they typically have more multifunctional devices that can track exercise. Wristband providers are experimenting with how to compete with smartwatches and take market share from the market leader, Fitbit. Examples of emerging value propositions for wristbands beyond fitness include mobile payments, access, safety, wellness and health.

Head-mounted displays (HMDs) are an emerging market with origins as expensive military projects, and in 2016 the HMD market will progress toward mainstream adoption for consumers and enterprise use. “New virtual reality HMDs for consumers, such as the HTC Vive, Oculus Rift, Sony PlayStation VR, and Microsoft HoloLens are expected to be available along with video games and entertainment content as well as business applications critical for their success,” said Brian Blau, research director at Gartner. “Film producers and sports leagues will augment their traditional content through HMDs to enhance their customer experiences by creating interactive attractions, movies, and sporting events that make the content more personal and meaningful.”

Enterprise use of HMDs will also grow in the coming years with 26 percent of HMDs designed for business use in 2018. HMDs will be purchased by businesses for use by employees for tasks such as equipment repair, inspections and maintenance. Workers also will use HMDs for viewing instructions and directions hands free while they are performing a task.

Additional information is available in the report “Forecast: Wearable Electronic Devices, Worldwide, 2016.”Further analysis on the wristband market can be found in the report “Market Trends: Wristbands, Worldwide, 2015.”

The popularity of Apple’s iPhone 6S and other products is boosting the microelectromechanical-systems (MEMS) microphones market to a compound annual growth rate (CAGR) of 11 percent from 2015 to 2019. The market is forecast to reach 5.8 billion units, with $1.3 billion in revenue, in 2019. Apple, which shifted from three MEMS microphones in the iPhone 6 line to four in the iPhone 6S line, will purchase more than one billion MEMS microphones in 2016 for the iPhone, according to IHS Inc. (NYSE: IHS).

“Prior to Apple, Microsoft and Motorola had already introduced some smartphones with four MEMS microphones, but in lower volumes,” said Marwan Boustany, senior analyst for MEMS and Sensors for IHS Technology. “Following Apple’s lead, additional manufacturers are expected to start including between two and four MEMS microphones in mobile handsets.”

Source: IHS

 

Apple is expected to purchase more MEMS microphones than Samsung Electronics, Xiaomi and Huawei combined in 2016. When counting the MEMS microphones used for the iPad, and for the earbuds sold with Apple’s iPhone, Apple Watch and Macbook notebooks, Apple accounted for a third of the total consumption of MEMS microphones in 2015.

The move to three or four microphones is currently driven by hands-free calling and voice commands for Siri, Google Now, Cortana and other apps, which are becoming an increasingly important means of interaction between consumers and their smartphones. Additional MEMS microphones are also added on the back of the phone for richer audio fidelity in video recording, noise cancellation and better call and recording performance.

“It will be harder for manufacturers to justify a move to five microphones in the coming years, unless clear and potentially popular use cases are identified,” Boustany said. “So far, Motorola’s Droid Turbo is the only handset with five MEMS microphones to become widely available.”

Knowles remains the market leader in MEMS microphone shipments and revenue, but the company’s share is eroding. Goertek, STMicroelectronics and AAC have recently made great gains in the market, selling to Apple and other companies, according to the IHS MEMS & Sensors for Consumer and Mobile Intelligence Service.

At this week’s IEEE International Solid-State Circuits Conference (ISSCC2016), nanoelectronics research center imec and Vrije Universiteit Brussel (VUB) presented a self-calibrated high-speed (10Mbits/s) phase modulator achieving an excellent Error Vector Magnitude (EVM) of -37dB at 10.25 GHz. The modulator is based on a l analog fractional subsampling PLL featuring a world leading -246.6dB Figure of Merit (FOM). It is an attractive solution for phase modulation in highly efficient polar transmitters.

Radio frequency synthesizers are ubiquitous building blocks of today’s ever growing networking solutions. Whether for high throughput applications like LTE-Advanced or for sub-mW Internet-of-Things nodes, the phase noise of the RF synthesizer sets a limit to the achievable data rate or to the total radio power consumption, as one can often be traded for the other. On top of that, for efficient spectrum usage, the new standards typically involve higher order modulation schemes. Polar transmitters, using efficient nonlinear power amplifiers might be a good option, but they need highly accurate phase modulators.

The PLL is built around an analog-based subsampling high-gain phase detector, which enables low-noise operation. The advanced 28nm CMOS technology is exploited to enhance its performance through innovative built-in background self-calibration that corrects all non-idealities of the analog building blocks. Together, these technique ensure a state-of-the-art noise performance resulting in only 176fsec jitter. Similarly, digital phase modulation is implemented, with quasi-ideal performance thanks to background calibration of all non-idealities. Combined with the intrinsic low noise of the PLL, a record EVM better than -37dB is achieved at 10GHz carrier.

These results were presented at ISSCC2016 as paper 9.7 in the High performance wireless session: “N. Markulic et al.; A Self-Calibrated 10Mb/s Phase Modulator with -37.4dB EVM Based on a 10.1-to-12.4GHz, -246.6dB-FOM, Fractional-N Subsampling PLL.”

At this week’s IEEE International Solid-State Circuits Conference (ISSCC2016), nanoelectronics research center imec and Vrije Universiteit Brussel (VUB) presented a four-antenna path beamforming transceiver for 60GHz multi Gb/s communication in 28nm CMOS technology. The transceiver is a breakthrough in developing a small, low-cost, and low power solution for multi-gigabit communication targeting WiGig as well as 60GHz wireless backhaul applications.

Due to the tremendous growth of mobile data traffic, display and audio applications, new spectral resources in the mm-wave frequency bands are needed to support user demand for high data rates. One way to realize this is through mm-wave wireless networks based on small outdoor cells featuring beamforming, a signal processing technique using phased antenna arrays for directional transmission or reception. The beamforming steers the radiation in the desired direction while achieving a good link budget that supports high spectral efficiency.

Imec’s and VUB’s 60GHz transceiver architecture features direct conversion and analog baseband beamforming with four antennas. The architecture is inherently simple and is not affected by image frequency interference. Moreover, a 24GHz phase-locked loop that subharmonically locks a 60GHz quadrature oscillator is inherently immune to the pulling disturbance of the 60GHz power amplifier.

The prototype transceiver chip (7,9mm2), implemented in 28nm CMOS, integrates a four-antenna array. The chip was validated with a IEEE 802.11ad standard wireless link of 1m. The transmitter consumes 670mW and the receiver 431mW at 0.9V power supply. The transmitter-to-receiver EVM was better than -20dB in all the four WiGig frequency channels (58.32, 60.48, 62.64 and 64.8 GHz), with a transmitter equivalent isotropic radiated power (EIRP) of 24dBm. This allows for QPSK as well as 16QAM modulations according to the IEEE 802.11ad standard, achieving very high data rates up to 4.62 Gbps.

Interested companies are invited to join imec’s 60 GHz R&D as a research partner and benefit from collaboration in imec’s Industrial Affiliation Program, development-on-demand, academic partnerships, or access to the technology for further development through licensing programs.

imec chip

The Semiconductor Industry Association (SIA) today announced the global semiconductor industry posted sales totaling $335.2 billion in 2015, a slight decrease of 0.2 percent compared to the 2014 total, which was the industry’s highest-ever sales total. Global sales for the month of December 2015 reached $27.6 billion, down 4.4 percent compared to the previous month and 5.2 percent lower than sales from December 2014. Fourth quarter sales of $82.9 billion were 5.2 percent lower than the total of $87.4 billionfrom the fourth quarter of 2014. All monthly sales numbers are compiled by the World Semiconductor Trade Statistics (WSTS) organization and represent a three-month moving average.

“Despite formidable headwinds, the global semiconductor industry posted solid sales in 2015, although falling just short of the record total from 2014,” said John Neuffer, president and CEO, Semiconductor Industry Association. “Factors that limited more robust sales in 2015 include softening demand, the strength of the dollar, and normal market trends and cyclicality. In spite of these challenges, modest market growth is projected for 2016.”

Several semiconductor product segments stood out in 2015. Logic was the largest semiconductor category by sales with $90.8 billionin 2015, or 27 percent of the total semiconductor market. Memory ($77.2 billion) and micro-ICs ($61.3 billion) – a category that includes microprocessors – rounded out the top three segments in terms of total sales. Optoelectronics was the fastest growing segment, increasing 11.3 percent in 2015. Other product segments that posted increased sales in 2015 include sensors and actuators, which reached $8.8 billion in sales for a 3.7 percent annual increase, NAND flash memory ($28.8 billion/2.2 percent increase), and analog ($45.2 billion/1.9 percent increase).

Regionally, annual sales increased 7.7 percent in China, leading all regional markets. All other regional markets – the Americas (-0.8 percent), Europe (-8.5 percent), Japan (-10.7 percent), and Asia Pacific/All Other (-0.2 percent) – saw decreased sales compared to 2014.

“The semiconductor industry is critically important to the U.S. economy and our global competitiveness,” continued Neuffer. “We urge Congress to enact polices in 2016 that promote innovation and growth. One such initiative is the Trans-Pacific Partnership (TPP), a landmark agreement that would tear down myriad barriers to trade with countries in the Asia-Pacific. The TPP is good for the semiconductor industry, the tech sector, the American economy, and the global economy. Congress should approve it.”

December 2015

Billions

Month-to-Month Sales                               

Market

Last Month

Current Month

% Change

Americas

6.07

5.75

-5.2%

Europe

2.93

2.77

-5.7%

Japan

2.68

2.57

-4.1%

China

8.67

8.45

-2.5%

Asia Pacific/All Other

8.53

8.08

-5.3%

Total

28.88

27.62

-4.4%

Year-to-Year Sales                          

Market

Last Year

Current Month

% Change

Americas

6.73

5.75

-14.5%

Europe

3.01

2.77

-7.9%

Japan

2.80

2.57

-8.1%

China

8.03

8.45

5.2%

Asia Pacific/All Other

8.57

8.08

-5.7%

Total

29.13

27.62

-5.2%

Three-Month-Moving Average Sales

Market

Jul/Aug/Sep

Oct/Nov/Dec

% Change

Americas

5.82

5.75

-1.2%

Europe

2.87

2.77

-3.6%

Japan

2.69

2.57

-4.3%

China

8.45

8.45

0.0%

Asia Pacific/All Other

8.58

8.08

-5.8%

Total

28.41

27.62

-2.8%

By Christian G. Dieseldorff, Industry Research & Statistics Group, SEMI (January 25, 2016)

The industry’s first and only ‘Global 200mm Fab Outlook report to 2018’ reveals a change in the landscape for 200mm fab capacity.

Figure 1

In comparing 2006 versus 2018, memory capacity share of 200mm has declined to just about 2% as most memory production has migrated to 300mm fabs . A similar transition to 300mm has occurred in Logic/MPU device production.

On the other hand, we see strong 200mm capacity growth from Discrete/Power, MEMS, and Analog segments in part to the transition from 150mm production to 200mm production. Foundry has also been gaining share, driven by strong demand for PMIC, display driver IC, CMOS image sensor, MCU, MEMS, and other devices requiring >90nm process technology. These device technologies are cited as key components for many IoT applications.

Based on these observations, the IoT wave appears to be breathing new life into 200mm fabs. Before the advent of the IoT movement began, 2012 data suggested a decline in 200mm fabs. However, comparing the worldwide installed capacity for 200mm in 6 year intervals, we expect capacity to return to 2006 levels by 2018.

Figure 2

A number of 200mm fab projects globally are being expanded or built through the end of 2018, resulting in capacity growth through the end of that year.

The 200mm Fab Outlook report to 2018 is the industry’s first and one-of-a kind 200mm fab outlook report. It features analysis and forecasts (tables, graphs and text) in over 80 pages in Adobe Acrobat, accompanied by detailed data in an Excel spreadsheet.

This report is of critical interest to anyone who participates in the 200mm device manufacturing supply chain. The Global 200mm Fab Outlook report analyzes past trends and explores future trends out to 2018, extending the forecast period of our existing Fab Database reports.

In this new report, SEMI tracks over 200 facilities manufacturing devices on 200mm wafers, including those that are planned, under construction, installing new equipment, active, closing, or closed.  Over 110 individual companies or institutions are covered. Fab information detailed in the report includes geographic location, amount of equipment spending, capacity trends, and product type changes.

Here are some of the key highlights from the report:

  • Trend of 200mm fab count and capacity out to 2018 (compared to 150mm and 300mm)
  • 200mm Silicon wafer shipment trends
  • Capacity addition by existing and new fabs out to 2018
  • Fabs changing from smaller wafer sizes to 200mm
  • Fabs changing from 200mm to other wafer sizes (like 300mm)
  • Fabs closed (and still closed), will be closed and may be closed by region and product type
  • Fabs/lines starting operation
  • Fabs/lines losing capacity
  • Change of landscape 2006 vs 2018: capacity by region, product type and technology node
  • Top 20 companies adding capacity 2015 to 2018
  • Capacity by region 2015 to 2018
  • Capacity by product type 2015 to 2018
  • Top 20 companies for equipment spending 2015 to 2018
  • Change of landscape equipment spending 2006 vs 2018

For more information on SEMI market research and reports, visit: www.semi.org/en/MarketInfo

Technavio analysts forecast the global semiconductor packaging and assembly equipment market to post a CAGR of 4.7% by 2020, according to their latest report.

The research study covers the present scenario and growth prospects of the global semiconductor packaging and assembly equipment market for 2016-2020. To calculate the market size, the report considers the revenue generated from the sale of die-level and wafer-level packaging and assembly equipment to semiconductor manufacturers.

Technavio’s report segments the market in two different main types of equipment:

  • Global die-level packaging and assembly equipment
  • Global wafer-level packaging and assembly equipment

“In 2015, die-level packaging and assembly equipment was the most prominent segment of the global semiconductor packaging and assembly equipment market, accounting for 60.6% of the total market. The primary reason behind the segment’s market dominance is the increasing demand for the application process, baseband, and SoCs, which are integrated in mobile devices. Wafer-level packaging and assembly equipment accounted for 39.42% of the overall market in 2015,” said Technavio lead semiconductor equipment analyst Asif Gani.

Technavio’s report highlights four major factors that are influencing the growth of the global semiconductor packaging and assembly equipment market:

  • Rising demand for polymer adhesive wafer bonding equipment
  • Growing application of semiconductor ICs in the IoT
  • Increasing complexity of semiconductor IC designs
  • Increasing miniaturization of electronic devices

Rising demand for polymer adhesive wafer bonding equipment

The demand for polymer adhesive wafer bonding equipment is rising due to the increasing adoption of advanced packaging applications like TSV, 2.5D and 3D ICs, stacked die packaging, and MEMS packaging. Polymer adhesive wafer bonding equipment provides reliable thinning and backside processing of the stacked dies. In addition, it lowers the cost of TSV integration. The rising demand for polymer adhesive wafer bonding equipment will therefore have a moderately high impact on the market for semiconductor devices, as this equipment supports 3D packaging, which is the future of the semiconductor packaging and assembly industry.

Growing application of semiconductor ICs in the IoT

An estimated 30 billion devices will be connected through the IoT by 2020. The IoT enables devices to collect data using sensors and actuators and transmit data to a centralized location on a real-time basis. The IoT has been extensively adopted in multiple market segments (consumer electronics, automotive, medical) and will likely drive the market for semiconductor devices and associated equipment during the forecast period.

The IoT requires the application of ultra-low power (ULP) processors. Therefore, to reduce the size of the processor chip and to fit in compact devices like wearables, development of new packaging technologies is necessary. The growing application of semiconductor ICs in the IoT will have a moderately high impact on semiconductor device manufacturers, as it is estimated that the market for semiconductors and sensors for IoT applications will cross the USD 50 billion mark by the end of 2020. Manufacturers will have to either increase their production capacity or revamp their technologies to match the changing technological environment.

Increasing complexity of semiconductor IC designs

Due to the increasing functionalities of consumer electronics, there is an increasing need for multifunctional ICs. Semiconductor manufacturers have addressed this need by developing sophisticated architecture and designs for semiconductor ICs. Manufacturing semiconductor ICs based on these designs is complicated, which has created a demand for upgraded packaging and assembly equipment.

“The increasing complexity of the semiconductor wafer design will have a moderate impact on semiconductor device manufacturers, as they must invest in packaging and assembly equipment to maintain the performance of semiconductor ICs,” said Asif.

Increasing miniaturization of electronic devices

The increasing demand for compact electronic devices used in multiple sectors like telecommunications and automotive has led to further miniaturization of semiconductor ICs. With advances in technology like 3D ICs and MEMS, as well as changes in the design of ICs such as finer patterning, electronic equipment is becoming more compact and user-friendly. MEMS is a technology used for miniaturization of chips by the process of microfabrication.

Along with the fast development of modern information technology, charge-based memories, such as DRAM and flash memory, are being aggressively scaled down to meet the current trend of small size devices. A memory device with high density, faster speed, and low power consumption is desired to satisfy Moore’s law in the next few decades. Among the candidates of next-generation memory devices, cross-bar-shaped non-volatile resistive memory (memristor) is one of the most attractive solutions for its non-volatility, faster access speed, ultra-high density and easier fabrication process.

Conventional memristors are usually fabricated through conventional optical, imprint, and e-beam lithographic approaches. However, to meet Moore’s law, the assembly of memristors comprised of 1-dimensional (1D) nanowires must be demonstrated to achieve cell dimensions beyond limit of state-of-art lithographic techniques, thus allowing one to fully exploit the scaling potential of high density memory array.

Prof. Tae-Woo Lee (Dept. of Materials Science and Engineering) and his research team have developed a rapid printing technology for high density and scalable memristor array composed of cross-bar-shaped metal nanowires. The research team, which consists of Prof. Tae-Woo Lee, research professor Wentao Xu, and doctoral student Yeongjun Lee at POSTECH, Korea, published their findings in Advanced Materials.

They applied an emerging technique, electrohydrohynamic nanowire printing (e-NW printing), which directly prints highly-aligned nanowire array on a large scale into the fabrication of microminiature memristors, with cross-bar-shaped conductive Cu nanowires jointed with a nanometer-scale CuxO layer. The metal-oxide-metal structure resistive memory device exhibited excellent electrical performance with reproducible resistive switching behavior.

This simple and fast fabrication process avoids conventional vacuum techniques to significantly reduce the industrial-production cost and time. This method paved the way to the future down-scaling of electronic circuits, since 1D conductors represent a logical way to extreme scaling of data processing devices in the single-digit nanometer scale.

They also succeeded in printing memristor array with various shapes, such as parallel lines with adjustable pitch, grids, and waves which can offer a future stretchable memory for integration into textile to serve as a basic building block for smart fabrics and wearable electronics.

“This technology reduces lead time and cost remarkably compared with existing manufacturing methods of cross-bar-shaped nanowire memory and simplifies its method of construction,” said Prof. Lee. “In particular, this technology will be used as a source technology to realize smart fabric, wearable computers, and textile electronic devices.”