Category Archives: Displays

October 4, 2012 – When LCD TVs were first competing against plasma TVs, one key differentiating argument was their brightness. Typical TVs have brightness measuring around >400 nits (1 nit is roughly 1 candela per m2) deemed suitable for TVs typically viewed in a living room and at a distance, while plasma TVs’ full-white brightness is typically sub-200 nits. (<300 nits is more typical of computer/laptop screens)

However, the trend in LCD TVs is now swinging toward lower brightness, points out DisplaySearch senior analyst Jimmy Kim, in a new blog post. Most existing low-brightness TV models were small and targeted the secondary market, but earlier this year first trials began for low-brightness TV models, with low-cost direct LED backlighting, in the main segment of large TVs, he notes. The tradeoff in these sets sacrifices design and picture quality for cost: lower brightness for the LED component, and a thinner light guide plate. These efforts have reduced the cost gap between LED and CCFL backlights to <1.3×, so pricing is similar. (A spike in CCFL materials prices is another reason for the shrinking cost difference.)

Consumers have responded, and low-brightness LED-backlit TVs accounted for more than 10% of total LCD TV shipments in 2Q12. So TV makers are now planning more models with low brightness, even those using edge LED backlights. Most mainstream TV models are being designed with ~350 nits, and some entry-level models will be as low as 250 nits, to fend off the charge of low-cost backlight TVs (300-350 nits); soon the only 400-nit LCD TVs will be high-end models, Kim indicates.

Getting edge-lit backlight TV brightness down to 250 nits narrows the cost gap between them and CCFL models from 2× to 1.5×, which is still a bit higher than aforementioned gap between CCFL and direct LED backlighting. But the goal here, Kim notes, isn’t to offer another CCFL alternative — it’s targeting the same entry segment as low-cost low-brightness direct LED backlight TVs.

by Dan Tracy, senior director, SEMI Industry Research and Statistics

October 3, 2012 – Semiconductor manufacturers in Japan are either consolidating or closing fabs, and, in several cases, transitioning to a "fab-lite" strategy, all in a restructuring effort to meet the market challenges ahead. While device manufacturers are consolidating manufacturing operations and plan to outsource more wafer fabrication and package assembly to foundries and packaging subcontractors, a large installed fab capacity remains in Japan. Recent data for the year shows overall wafer area shipments into Japan’s fabs being the same as shipments into Taiwan.

By 2014, the total installed fab capacity Japan should increase slightly from about 4.5 million to 4.6 million 200mm equivalent wafers per month. Installed 300mm fab capacity is expected to increase from about 760,000 to 840,000 300mm wafers per month — representing, by region, the third largest 300mm fab manufacturing capacity base globally. Over the next several years, fab spending in the Japan market will be directed towards the production of NAND flash memory, power semiconductors, high-brightness LEDs, and CMOS image sensors.


Regional share forecasted for 2013 fab materials market. Total market size: $25.7 billion.

Overall equipment spending in Japan will likely range on the order of $4 billion per year. Expected NAND flash investments in 2013 could approach up to $2.5 billion. LED fab equipment spending is estimated to be $340 million next year. Finally, Sony is expected to invest about US$ 1 billion or more in its CMOS image sensor production.

Japanese equipment and material suppliers are leading players on the global semiconductor industry stage. It is estimated that Japan-headquartered equipment companies collectively capture about 35% share of the global semiconductor industry spending per annum. Like their North American and European counterparts, customers in the rest of the Asia Pacific region are the largest base for new equipment sales.

Chemical and other material suppliers in Japan are market leaders in the manufacturing of silicon wafers, III-V wafers, advanced chemicals, packaging resins, and packaging substrates. It is estimated that the Japanese material suppliers sales represent about 70% of the global semiconductor materials market, both fab and packaging.

Japanese suppliers showcase the latest products at SEMICON Japan 2012

Leading Japanese equipment and materials suppliers will exhibit at SEMICON Japan 2012 on December 5- 7, along with global key players, at the Makuhari Messe, Japan. Find the latest products and innovations this companies offer to customers globally that enable key technologies for the future including 450mm, EUV, TSV, power devices, and HB-LEDs to name a few. Also, the show will co-locate with a major photovoltaic show, PVJapan 2012 so you can connect to two major microelectronics industries in a single visit.

For more information, including registration and exhibition, visit www.semiconjapan.org/en.

September 26, 2012 – Sumitomo Chemical has joined the Holst Center’s shared research program on printed organic lighting and signage, to extend the program’s research into multilayer solution processes for high-efficiency organic light-emitting diodes (OLEDs).

OLEDs as large-area light sources could cut lighting-related energy use by 50%-90%, while enabling unique lighting applications. They are conventionally made by depositing numerous thin layers of material onto glass substrates or flexible plastic foils, using evaporative processes in vacuum conditions. Switching to solution-based processes that can be done in an atmospheric-pressure environment would significantly reduce costs, by removing the need for vacuum equipment and reducing material waste.

Also read:

Toward this end, Sumitomo Chemical‘s participation in the Holst program will be providing high-end OLED materials, particularly for the active (light-emitting) layers. "Their expertise and high-end OLED materials will help us develop solution-processed OLEDs that match the efficiency of today’s highest-performing devices but at lower manufacturing costs," stated Ton van Mol, Partnership Director at Holst Centre.

Sumitomo Chemical, meanwhile, also will benefit from the program’s expertise in optimizing materials for low-cost production and flexible substrates. "Holst Centre is a leading research center for flexible electronics, and one of the few working on solution processing for OLEDs. Its unique infrastructure and many partners across the OLED lighting community will help us tailor our materials to better meet the needs of the lighting industry," echoed Ikuzo Ogawa, managing executive officer at Sumitomo Chemical.

The Holst Center is an independent open-innovation R&D center bringing together industry and academia to develop technologies for wireless autonomous sensor technologies and flexible electronics. It was set up in 2005 by imec (Flanders, Belgium) and TNO (The Netherlands) with support from the Dutch Ministry of Economic Affairs and the Government of Flanders. It is named after Gilles Holst, a Dutch pioneer in Research and Development and first director of Philips Research. Located on High Tech Campus Eindhoven, Holst Centre has over 180 research staff from 28 nationalities and a commitment from close to 40 industrial partners.

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September 25, 2012 – Linde Electronics, a unit of the Linde Group, has added a new high-purity nitrous oxide (N2O) plant in Zhenjiang, Jiangsu Province, China to help support increased adoption of metal oxide transistors by display manufacturers.

The new plant follows an expansion of a plant in Taiwan and another one being built in Korea; the two plants in China will be managed by Linde LienHwa, a joint venture with LienHwa MiTAC Group in Taiwan. Linde and LLH are currently running six N2O plants in Asia with a capacity of more than 3,000 tons per year; the three new plants will boost design capacity to more than 10,000 tons per year.

Improving electron mobility in transistors is crucial in bringing higher resolutions and higher frame rates to TVs, mobile and computing devices. Making next-generation ultrahigh-definition 3D TFT/LCD and OLED displays is currently expensive, requiring the use polysilicon transistors which cost twice as much as those using amorphous silicon. Replacing polysilicon with metal oxide can increase electron mobility by a factor of up to 40 compared with conventional technology, at a comparable cost. Metal oxide transistor manufacturing requires high volumes of high-purity N2O to create functional layers of the microscopic thin-film transistors required to control each of the millions of pixels that make up the visible image.

The metal oxide transistors also allow more light to pass from the backlight through the backplane, reduce power consumption, and increase battery life of mobile devices. Moreover, they also allow the higher currents needed to drive OLEDs. Most display makers have or are working on products with metal-oxide transistors — Samsung and LG both have 55-in. OLED TVs, and Sharp has begun commercial production of metal oxide displays in its Kameyama plant.

"The shift from silicon to metal oxide transistors would not be possible without a secure supply of high-purity N2O, which highlights the critical role that specialist gases play in enabling the development of next-generation consumer electronic devices," stated Andreas Weisheit, head of market development for flat-panel displays at Linde Electronics.

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September 25, 2012 – A three-year European project to research solution-processable materials for OLEDs has concluded, with newly developed materials that can be integrated into large-surface OLED components and are suited for printing processes.

The NEMO (NEw Materials for OLEDs from solutions) project, a consortium of 11 companies led by Merck, was formed in Nov. 2009 with backing from the German Federal Ministry of Education and Research (BMBF), to explore a variety of OLED materials and capabilities: soluble light-emitting materials, charge transport materials, new adhesives for reliable encapsulation of each OLED component. Physical tests were included to understand more about the materials for future development work. The project’s total budget was €29M (roughly US $38M).

"The success of the project is an enormous and important step for printable material systems with very good performance data," stated Dr. Udo Heider, head of the OLED unit at Merck. "We are enabling our customers to use cost-efficient manufacturing processes, which thanks to their low material losses in production, will ultimately also benefit the environment."

Results of the project include Merck’s development of a new phosphorescent materials for red, green and blue applications — increasing lifetime extrapolated to 50% of initial brightness (i.e., stability in use) of green triplet emitter materials from 10,000 hours to more than 200,000 hours, and increasing the efficiency of these materials from 30 cd/A up to more than 70 cd/A (candela/ampere) at a brightness of 1000cd/m2.

Here’s a list of other results achieved by the NEMO project’s four industry companies and seven research institute/academic groups:

Humboldt University of Berlin: Modular synthesis strategies were used to produce and test new electron transport materials.

DELO Industrie Klebstoffe: Development of adhesives with low water vapor permeation for flat encapsulation. A main focus of the work was on optimizing the compatibility of the adhesive with the OLED materials. Suitable adhesive systems were identified, and a significant reduction in component defects was achieved. The developed systems were extensively characterized.

Enthone GmbH (formerly Ormecon): Developed dispersions of polyaniline, an electrically conductive polymer, from which charge carrier layers for OLEDs were produced. These displays show electrical properties equivalent to those of the previously used material. For OLED component characterization, impedance spectroscopy was used to investigate the OLEDs prepared by Merck. It was possible to identify unstable areas, which are responsible for the short lifetimes of OLEDs. Additionally, the impedance measurements were used to predict the lifetime of displays.

Fraunhofer Institute for Applied Polymer Research (IAP): Developed polymer-based phosphorescent systems for green and red Merck emitters. Suitable charge transport molecules were bonded as a side group to a main polymer chain. It was possible to demonstrate that this leads to comparable or even better performance parameters and lifetimes of OLEDs in comparison with solution-processable small molecules. For "green", energy efficiencies of 61 cd/A and lifetimes of 66,000 h @ 1000 cd/m2 were achieved.

Heraeus Precious Metals GmbH & Co. KG (formerly H.C. Starck Clevios GmbH): Developed new materials for the intermediate layers, which will improve the charge carrier injection from the anode into the OLED emitter layer and help to increase the lifetime of the components. The work function of the hole injection layers can be set to a specific target value within a wide range of 4.8-6.1 eV. Water-soluble polymer counterions have been developed, which have helped to realize dehydrated PEDOT materials for the first time.

In parallel to this, work was conducted on transparent electrodes that can be separated from solution and are expected to lower the costs of OLEDs. The conductivity of the PEDOT:PSS films was further increased. Initial ITO-free OLED lamps have been realized. In combination with screen printed silver lines, this enables the production of OLEDs for lighting application without any identifiable decrease in luminance from the edge to the center of the component.

University of Potsdam: Studied physical properties such as charge carrier transport and excitation dynamics in newly synthesized materials and in the finished component. In combination with stationary and transient simulations, information was obtained on what processes restrict the efficiency of light emitting diodes and which ones impact component aging.

University of Regensburg: One working group, led by Professor Yersin, developed new emitter classes with both strong and weak metal-metal interactions that show a singlet harvesting effect. It is thus possible to realize highly efficient emitters for OLEDs based on highly economical copper clusters. This work on singlet harvesting with newly developed emitters made from copper clusters was recognized in April 2012 with an innovation prize at the international SPIE Organic Photonics conference in Brussels.

Another working group (led by Professor König) synthesized emitter libraries in accordance with a simple combinatorial protocol. A screening system was developed for the rapid and virtually automated identification and characterization of individual emitters as well as photostability testing thereof. This made it possible to investigate the degradation behavior of many substances and to draw conclusions on various degradation mechanisms.

University of Tübingen: Two groups from Tübingen provided new metallorganic cluster compounds that can be used as luminescent molecules in OLEDs. In chemical synthesis, coordination compounds of the metals rhodium, iridium, palladium, platinum, copper, silver and gold were presented and characterized, giving rise to new, highly promising lead structures for emitter materials.

September 24, 2012 – Sharp Corp. is in discussions with Intel to use the Japanese firm’s LCD panels in new ultrabook laptops, and could be seeking a more substantial partnership that would make the chipmaking giant its top stakeholder, according to local media.

The Mainichi reported that the two firms "are in talks" for Intel to invest more than ¥30B (roughly US $380M) in the "financial troubled" Japanese company, with a deal possible as soon as early October. In a terse announcement, Sharp denied any capital tie-up negotiations.

Sharp’s IGZO display technology (indium gallium zinc oxide) for small- and medium-sized LCDs is seen as a good fit with Intel-powered ultrabooks. It offers mobility performance somewhere between amorphous and low-temperature polysilicon. Its benefits include lower power consumption, thinness (less backlighting needed), highly touch-sensitive, and high definition.

Intel, meanwhile, is viewed as something of a white knight for the Japanese firm, which earlier this year tried a similar tie-up with Taiwanese conglomerate Hon Hai Precision Industry Co.. That deal apparently remains in limbo due to a plunge in Sharp’s valuation. Reuters notes that "cash-strapped" Sharp has nearly ¥360B in short-term loans to repay, and is approaching existing lenders for another ¥200B in more loans.

Sharp has separately announced other efforts to improve its financial standing, including the sale of its US subsidiary Recurrent Energy, two years after it bought the solar firm. It also is selling TV assembly plants in Mexico and China to Hon Hai, and instituting early retirement plans in Japan to reduce costs.

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imec, based in Leuven, Belgium, announced that it has integrated an ultra-thin, flexible chip with bendable and stretchable interconnects into a package that adapts dynamically to curving and bending surfaces. The resulting circuitry can be embedded in medical and lifestyle applications where user comfort and unobtrusiveness is key, such as wearable health monitors or smart clothing. At the 2012 ESTC conference (Electronics System Integration Technology Conference) in Amsterdam (September 17-20, 2012), the researchers will present their results and showcase their latest demonstrations.

Today, most electronic appliances are rigid, or at most mechanically flexible. A growing number of applications, however, require electronics that dynamically adapt to curving and bending surfaces. Some examples include biomedical systems such as unobtrusive, wearable health monitors (e.g. electrocardiogram or temperature sensors), advanced surgical tools, or consumer electronics such as mobile phones embedded in smart textiles. imec’s associated lab at the University of Ghent has pioneered this technology, moving it toward industrial applicability. Industrial partners that want to build a critical lead in this field are welcomed to join the R&D program.

For the demonstration, the researchers thinned a commercially available microcontroller down to 30µm, preserving the electrical performance and functionality. This die was then embedded in a slim polyimide package (40-50µm thick). Next, this ultrathin chip was integrated with stretchable electrical wiring. These were realized by patterning polyimide-supported meandering horseshoe-shaped wires, a technology developed and optimized at the lab. Last, the package is embedded in an elastomeric substrate, e.g. polydimethylsiloxane (PDMS). In this substrate, the conductors behave as two dimensional springs, enabling greater flexibility while preserving conductivity.

“Future electronic circuitry will stretch and bend like rubber or skin while preserving its conductivity,” comments Jan Vanfleteren, responsible for the research on flexible and stretchable electronics at imec’s Ghent lab. “This breakthrough achievement demonstrates that flexible Ultra-Thin Chip Packages (UTCP) can be integrated with stretchable wiring, paving the way toward fully flexible applications. We anticipate the first appliances will be used in intelligent clothing, with medical applications following later. Once commercial products are introduced, I expect to see clothing with signalization by using LEDs and sensors to track movements.”

This research is supported by the Agency for Innovation by Science and Technology in Flanders (IWT) through the SBO-BrainSTAR project.

Also read: IBM demos high-performance CMOS on flexible plastic substrates

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Flexible circuitry promises a host of innovative biomedical, security, wearable and other products. To date, flexible circuits have offered only limited performance because plastic substrates aren’t compatible with the high temperatures/harsh processes needed to make high-performance CMOS devices.

Some attempts have been made to fabricate high-performance CMOS on silicon substrates and then transfer the devices to plastic, but this has been complex and expensive. At the International Electron Devices Meeting (IEDM), for the first time, a way around this will be unveiled. IBM researchers will demonstrate high-performance state-of-the-art CMOS circuits —including SRAM memory and ring oscillators—on a flexible plastic substrate. The image above is a photo of the final 100-mm-diameter flexible ETSOI circuit on plastic.

The extremely thin silicon on insulator (ETSOI) devices had a body thickness of just 60 angstroms. IBM built them on silicon and then used a simple, low-cost room-temperature process called controlled spalling, which essentially flakes off the Si substrate. Then they transferred them to flexible plastic tape.

The devices had gate lengths of <30 nm and gate pitch of 100 nm. The ring oscillators had a stage delay of just 16 ps at 0.9 V, believed to be the best reported performance for a flexible circuit. A slight degradation of delay for the flexible sample after the layer transfer comes from degradation of p-FET performance due to strain effects.

The image below is a cross-sectional view taken by a TEM electron microscope after selective removal of the residual silicon, confirming the structural integrity of the device.

 

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September 17, 2012 – Shipments of tablets are booming, and that means demand for tablet displays is set to spike as well — and some new panel makers are getting in on the action, according to IHS iSuppli.

Shipments of tablet displays, including iPad’s 9-in. model and smaller 7.x-in. models from various brands, will soar 56% to 126.6 million units in 2012, according to the analysis firm. Of those, more than half (74.3, 35% Y/Y growth) will be for the 9.x-in. segment where the iPad rules supreme.

The second-largest tablet display segment, the 7.x-in. category, is taking up some share now (41.1M units, 98% Y/Y), accounting for nearly a third of total shipments vs. 26% a year ago, notes iSuppli. That’s because these smaller tablets will be launching with lower prices than the bigger ones: Samsung’s Galaxy Tab, Amazon’s Kindle Fire, Barnes & Noble’s Nook tablet, and others that use the Google Android operating system, explains Vinita Jakhanwal, director for small & medium displays at IHS. (And Apple is expected to come out with its own smaller display later this year.)

Tablet demand strongly follows seasonal trends, and thus shipments of tablet displays fell off in 1Q12 (-20% vs. 1Q12) as suppliers cleared out inventory. Shipments ramped back up in 2Q12 (27M units, 29% Q/Q) once those inventories cleared out, though, and panel orders started coming in for new launches planned in 2H12, iSuppli explains.

LG Display and Samsung Display were by far the top two suppliers of tablet displays in 1Q12 (42% and 38% marketshare, respectively). Both are top iPad suppliers; LG also makes displays for Amazon and B&N, while Samsung sources displays for its own internal tablet business. Both companies are making major investments to upgrade both technology and capacity for high-performance tablet panels, e.g. wide-viewing-angle capabilities such as in-plane switching and fringe-field switching — and both are looking to convert amorphous-silicon (a-Si) fabs to oxide silicon panels to help improve the technology’s resolution, power consumption, and performance.

Another angle in the surge of tablet displays is the arrival of other major LCD panel suppliers, particularly Japanese ones (Sharp, Japan Display, Panasonic) who are dedicating capacity at their Gen-6 and Gen-8 fabs to make room, iSuppli notes. Together they’ll be increasing capacity allocation for small/medium displays by 164% this year to 5.5 mw. Sharp in particular has its eye on oxide silicon capacity, as it’s been supplying panels for the new iPad from its G8 fab. Panasonic is likely to produce 7.x-in. and 8.x-in. tablet panels during 2H12, the firm adds.

Meanwhile, major Taiwanese display suppliers also are adjusting their business models, to go after business in the education sector and China’s white-box market, iSuppli notes. While AU Optronics is believed to be qualified as a supplier for the smaller (7.85-in) iPad, generally speaking Taiwanese panel suppliers primarily target the Chinese market that emphasizes lower-priced tablets — which means they must dial back the display specs, e.g. with more basic twisted nematic (LCD) and not the wide-viewing capabilities.

Size 2011 2012
5.x-in. 0.9 0.3
7.x-in. 20.8 41.1
8.x-in. 5.2 10.9
9.x-in. 55.2 74.3
TOTAL    82.1 126.6

Forecasted shipments of worldwide tablet panel displays
by size, in millions of units. (Source: IHS iSuppli)

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The 58th annual International Electron Devices Meeting (IEDM) will take place December 10-12, 2012 at the San Francisco Hilton Union Square, preceded by a full day of Short Courses on Sunday, Dec. 9 and by a program of 90-minute afternoon tutorial sessions on Saturday, Dec. 8.

Highlights of the IEDM 2012 technical program, which comprises some 220 presentations, include Intel’s unveiling of its industry-leading trigate manufacturing technology; a plethora of advances in memory technologies from numerous companies; IBM’s demonstration of high-performance logic technology on flexible plastic substrates; continuing advances in the scaling of transistors to vanishingly small sizes, and breakthroughs in many other areas that will continue to move electronics technology forward.

“The IEDM can be a crystal ball looking into the future of technology evolution. Leading-edge technologies and novel devices reported at the conference will shine light on the industrial mainstream in the next three-to-five years,” said Tzu-Ning Fang, IEDM 2012 Publicity Chair and Senior Member, Technical Staff, at Spansion, Inc. “This year’s program shows a tremendous amount of work being done in emerging technologies, including novel materials such as molybdenum sulfide, new structures, 3D NAND memories, wider use of III-V materials, MRAM, nanowires and more.”

Besides the IEDM technical program, attendees will enjoy evening panel sessions, Short Courses, award presentations and other events, as follows:

90-Minute Tutorials — Saturday, Dec. 8

Back by popular demand for the second year, the IEDM will hold 90-minute tutorial sessions on emerging topics presented by experts in the fields. They are meant to bridge the gap between established textbook-level knowledge and the leading-edge research as presented during the conference. The tutorial sessions will be presented in parallel in two time slots. Advance registration is required.

2:45-4 p.m.

High Mobility Channel CMOS Transistors – Beyond Silicon by Shinichi Takagi, University of Tokyo

Fundamentals of GaN Based High Frequency Power Electronics by Tomas Palacios, M.I.T.

Spintronics for Embedded Non-Volatile Electronics by Tetsuo Endoh/Tohoku University and Arijit Roychowdhury/Intel

4:30-6:00

2D semiconductors – Fundamental Science and Device Physics by Ali Javey, University of California, Berkeley

Scaling Challenges of Analog Electronics at 32nm and Beyond by Mustafa Badaroglu/IMEC and Bram Nauta/University of Twente

Beyond Charge-Based Computing by Kaushik Roy, Purdue University

Short Courses — Sunday, Dec. 9

The IEDM offers two day-long short courses on Sunday, prior to the technical sessions. They provide the opportunity to learn about emerging areas and important developments, and to benefit from direct contact with expert lecturers. Advance registration is required. This year’s courses are:

Emerging Technologies for Post-14nm CMOS

Circuit and Technology Interaction

Plenary Presentations — Monday, Dec. 10

IEDM 2012 will open on Monday, Dec. 10 at 9 a.m. with three plenary talks:

Flexible Bio-Integrated Electronics by John A. Rogers, University of Illinois

State of the Art and Future Prospects in Display Technologies by Joo-Tae Moon, Senior VP, Director R&D Center, Samsung Display Company

Ultimate Transistor and Memory Technologies: Core of a Sustainable Society by Luc Van den hove, CEO and President IMEC

Emerging Technologies Session — Tuesday morning, Dec. 11

This year’s Emerging Technologies session is on the topic Spintronics: Magnetic Materials and Device Applications, organized by Stefan De Gendt of IMEC. Invited speakers from academia and industry will discuss the challenges, prospects and recent advances in spin-based technology, devices and systems. Following the discovery of the giant magnetoresistance (GMR) effect more than a decade ago, this field has witnessed a veritable revolution encompassing materials and physical phenomena. Electronic devices based on spin transport are expected to play a major role in future information and communication technologies, as spintronic devices will use the spin degree of freedom to store, transport and process information. Papers in this session are:

Spin Transport in Graphene: Fundamental Concepts and Practical Implications by Abdelmadjid Anane et al, Unité Mixte de Physique CNRS/Thales

Thermal Spin Transport and Applications by S. Y. Huang et al, Johns Hopkins/National Tsing Hua University/Academia Sinica

Progress of STT-MRAM Technology and the Effect on Normally-Off Computing Systems, by H. Yoda et al, Toshiba

 Spin Transport in Metal and Oxide Devices at the Nanoscale, by Subir Parui et al, Zernike Institute for Advanced Materials

Error Immunity Techniques for Nanomagnetic Logic, Brian Lambson et al, University of California, Berkeley/Lawrence Berkeley National Lab

Boolean and Non-Boolean Computation With Spin Devices, Mrigank Sharad et al, Purdue University

Luncheon Presentation — Tuesday, Dec. 11

The IEDM Luncheon presentation will be given by Ajit Manocha, CEO of GLOBALFOUNDRIES, Inc., on the topic Is the Fabless/Foundry Model Dead? We Don’t Think So. Long Live Foundry 2.0!

Evening Panel Sessions — Tuesday evening, Dec. 11

The IEDM will offer attendees two evening panel discussions. Audience participation is encouraged, with the goal of fostering an open and vigorous exchange of ideas. The panel topics are:

"Will Future Non-Volatile-Memory Contenders Disrupt NAND?" moderated by Al Fazio, Intel

 “The Mighty Little Transistor: FinFETs to the Finish or Another Radical Shift?” moderated by Suresh Venkatesan, GLOBALFOUNDRIES.

Entrepreneurs Lunch — Wednesday noon, Dec. 12

New for 2012 is an entrepreneurs lunch. The speaker will be Weili Dai, cofounder of Marvell Technology Group and Vice President and General Manager of Marvell’s Communications and Consumer Business. One of the most successful women entrepreneurs in the world, she was named No. 89 on the Forbes list of “The World’s 100 Most Powerful Women” earlier this year.

Further information

For registration and other information, interested persons should visit the IEDM 2012 home page at www.ieee-iedm.org.