Category Archives: MEMS

Nanoplas, a global supplier of plasma processing equipment to the semiconductor industry, today announced a new dry-etch process offering virtually unlimited etch selectivity for removing dielectric films on microprocessors and memories at high throughput.

Nanoplas’s new Atomic-Layer Downstream Etching (ALDE) processing allows etching rate and selectivity to be controlled independently, which provides virtually unlimited selectivity. Based on the company’s new inductively coupled plasma (ICP) source, ALDE features atomic-layer control at wafer-surface level. 

“Nanoplas’s Atomic-Layer Downstream Etching technology enables a new class of plasma-based etching and stripping processes at the 20nm technology node and beyond,” said Gilles Baujon, Nanoplas CEO. “By allowing virtually unlimited selectivity, ALDE will alleviate many of the challenges engineers face in manufacturing next-generation devices – and enable them to achieve higher yields – because the process window will be larger and will easily integrate with existing pre- and post-ALDE steps. This is a huge benefit and driver for IC manufacturing. Bringing a new generation of devices to production is all about having sufficiently large process windows to generate high yields.”

Nanoplas intends for ALDE to replace current wet and dry techniques for removal of the many critical silicon-nitride spacer films in most advanced transistor-formation technologies.

Nanoplas expects to release a first ALDE application for SiN etching in Q2.

Nanoplas is an equipment supplier to the semiconductor industry specialized in novel plasma process solutions for nanoelectronics. The company’s plasma-processing tools are used by leading microelectronics companies in North America, Europe and Asia. The company is based near Grenoble, in St-Égrève, France.

 

Seven O-S-D product categories and device groups reached record-high sales in 2012 compared to 14 new records being set in 2011, according to data shown in the 2013 edition of IC Insights’ O-S-D Report, A Market Analysis and Forecast for Optoelectronics, Sensors/Actuators, and Discretes.  Figure 1 shows that in 2012, two sales records were achieved in optoelectronics, four in sensors/actuators (including total sensor sales), and one in discretes.  Ten new sales records are expected to be set in the O-S-D markets in 2013.  All the products shown in Figure 1 are forecast to grow by moderate percentages in 2013, which will lift them again to new record-high levels.  Total sales of MEMS-based products are expected in rise 9% in 2013 and reach a new annual record of $7.6 billion, surpassing the current peak of $7.1 billion set in 2011.

O-S-D products record sales 2012

With sales in the much larger IC segment falling 4% in 2012, O-S-D’s share of total semiconductor revenues grew to 19% in 2012 versus 18% in 2011 and 14% in 2002.  O-S-D’s marketshare of total semiconductor sales in 2012 was the highest it’s been since 1991.

Key findings and forecasts in the 2013 O-S-D Report include:

CMOS image sensors were the fastest growing O-S-D product category in 2012 with sales rising 22% to a new record-high $7.1 billion, blowing past the previous peak of $5.8 billion set in 2011. Since the 2009 downturn year, CMOS image sensor sales have climbed 85% due to the strong growth of embedded cameras used in smartphones and portable computers (including tablets) and the expansion of digital imaging into more systems applications. CMOS designs are now grabbing large chunks of marketshare from CCD image sensors, which are forecast to see revenues decline by a CAGR of 2.4% between 2012 and 2017.  Sales of CMOS imaging devices are projected to grow by a CAGR of about 12.0% in the forecast period and account for 85% of the total image sensor market versus 15% for CCDs in 2017.  This compares to a 60/40 split in 2009.

High-brightness LED revenues climbed 20% in 2012 to nearly $9.5 billion and are expected to hit the $20.0 billion level in 2017, with annual sales growing by a CAGR of 16% in the next five years. That’s the good news, but of immediate concern is whether new solid-state lighting applications are growing fast enough to consume the large amounts of production capacity being added worldwide in LED wafer fabs—especially in China.  Solid-state lighting’s main growth engine in recent years—backlighting in LCD televisions and computer screens—is slowing, and the multi-billion dollar question is whether the next wave of applications (e.g., LED light bulbs, new interior and exterior lighting systems, digital signs and billboards, automotive headlamps, long-lasting street lights, and other uses) can keep the industry ahead of a potential glut in high-brightness lamp devices.

About 81% of the sensor/actuator market’s sales in 2012 came from semiconductor products built with MEMS technology.  Sensors accounted for 52% of MEMS-based device sales in 2012, while actuators were 48% of the total.   A 10% drop in actuator sales in 2012 lowered total revenues for MEMS-based devices to $7.0 billion from the current peak of $7.1 billion in 2011.  By 2017, MEMS-based sensors and actuators are projected to reach $13.5 billion in sales, which will be a CAGR increase of 14.0% from 2012, and unit shipments are expected to grow by a CAGR of 17.4% in the next five years to 9.7 billion devices.  MEMS manufacturing continues to move into the mainstream IC foundry segment, which will open more capacity to fabless companies and larger suppliers. TSMC, GlobalFoundries, UMC, and SMIC all have increased investments to expand their presence in MEMS production using 200mm wafers.

Among the strongest growth drivers covered in the O-S-D Report are: high-brightness LEDs for solid-state lighting applications; laser transmitters for high-speed optical networks; MEMS-based acceleration/yaw sensors for highly adaptive embedded control in cellphones, tablet computers, and consumer products; CMOS imaging devices for automobiles, machine vision, medical, and new human-recognition interfaces; and a range of power transistors for energy-saving electronics and battery management.

 Now in its eighth annual edition, the 2013 O-S-D Report contains a detailed forecast of sales, unit shipments, and selling prices for more than 30 individual product types and categories through 2017.

 

Solid State Technology is proud to announce that Yoon-Woo Lee will be speaking at The ConFab 2013. The event will be held June 23-26, 2013 at The Encore at The Wynn in Las Vegas. Lee is the Executive Advisor of Samsung Electronics.

Lee’s presentation reviews what is currently happening in the IT industry and suggests strategies of collaboration within the industry. Technology is advancing rapidly in various sectors, basically driven by semiconductors that have strived toward greater performance, lower power, and smaller form through relentless migration, he says in his abstract.

“What is now important,” he writes, “is enriching the end user experience with a view on the entire value chain of the ecosystem. This is especially true as the IT revolution is now spilling over into other cutting edge fields like bio, nano, energy, and the environment. Collaboration is also critical in intra-regional trade and development. Countries will need to lower risk and boost efficiency through closer cooperation along the supply chain, forging alliances, devising common standards, and undertaking joint R&D.”

Prior to his current position Lee served as Vice Chairman and CEO from May 2008 to December 2009; Chairman of the Board of Directors from May 2008 to December 2010; and Vice Chairman from December 2010 to December 2011. An engineer and 40-year veteran of Samsung, Lee’s leadership and in-depth technology expertise have helped build Samsung into the world’s largest electronics company. He is widely credited with the success of Samsung’s Semiconductor Business and implementing policies and training programs that have earned Samsung the reputation of being the best company to work for in Korea.

Lee has been with Samsung since 1968. He served as the Managing Director of Giheung’s main semiconductor plant operations in 1987, and was appointed as the President of Samsung’s Semiconductor Business in 1996. Demonstrating his business acumen in a dynamic and fast-paced semiconductor industry, he successfully implemented diversification strategies that allowed the Semiconductor Business to navigate through cyclical market downturns while increasing market share, year after year. In 2004, Lee was promoted to Vice Chairman in charge of Global Collaboration, and also was appointed Head of the Samsung Advanced Institute of Technology. In 2005, he became Chief Technology Officer, responsible for planning mid- to long-term strategies for promoting new business development based on cutting-edge technologies.

Lee serves in numerous industry leadership positions including Vice Chairman of Seoul Chamber Commerce & Industry, Vice Chairman of Korea-Japan Economic Association, and Vice Chairman of Korea Business Council for Sustainable Development. In 2005, he was honored by the Korea Management Institute as CEO of the Year. Mr. Lee graduated from Seoul National University with a bachelor’s degree in Electrical Engineering.

For more information on or to register for The ConFab 2013, visit The ConFab section of our website.

System Plus Consulting analyzed a BAW MEMS Filter manufactured by Avago Technologies, assessing its manufacturing process, costing results and breakdown. With more than 1 billion units produced per year and a market share of 65%, System Plus Consulting found that Avago Technologies clearly dominates the BAW filter market. Avago BAW filters are all-silicon MEMS devices manufactured with Avago’s FBAR and Microcap technologies.

 

Avago ACMD-7612 Duplexer

(Courtesy of System Plus Consulting)

 

The ACMD-7612 is targeted for handsets or data terminals operating in the UMTS Band I frequency range and features a Maximum RF Input Power to Tx Port of ±33 dBm.

Manufacturing process

Film Bulk Acoustic Resonator (FBAR) is a silicon-based MEMS technology which uses AlN piezoelectric material for resonating layers. It allows creating structures with higher Q than surface acoustic wave (SAW) structures for most cellular frequency bands.

Microcap corresponds to the wafer level packaging process of the FBAR filters. The microcap process uses gold plated Through Silicon Vias (TSV) in the cap to report electrical contacts (and thus reduce filter dies size) and gold-gold thermo-compression wafer bonding to ensure an hermetic sealing.

 

MEMS Filter Cross-section

(Courtesy of System Plus Consulting)

 

Costing results

Filter dies are manufactured on high resistivity 6-inch wafers in Avago’s Fort Collins wafer fab. With more than 20,000 potential good dies per wafer, the manufacturing cost of a filter die is estimated to be in the range of 5¢.

 

 

MEMS Filter Wafer cost breakdown

(Courtesy of System Plus Consulting)

 

The full reverse costing report combining technological analysis of the devices and detailed manufacturing cost is already available.

System Plus Consulting develops costing tools and performs on demand reverse costing studies of semiconductors – from integrated circuits to power devices, from single chip packages to MEMS and multi-chip modules – and of electronic boards and systems.

ALTIS Semiconductor, a global specialty foundry based in France, announced today the finalization of a foundry agreement with IBM Microelectronics. Under the terms of this agreement, ALTIS will be the foundry partner for the IBM 180nm SOI technology. ALTIS will deliver high volume products starting Q2 2013 and will secure capacity increase for 2014 and beyond to address the IBM forecasted demand.

This agreement allows the company to leverage its analog/mixed signal and RF expertise as well as its proven operational excellence and quality focus to serve a long term partner, who is well recognized within the industry for its technology leadership and innovation.

ALTIS has a long term relationship with IBM Microelectronics and has produced many product families for IBM over the past decades. This foundry agreement addresses the next generation of consumer products, including as an example, the RF/SOI chipsets used in the world most advanced mobile devices.

IBM’s 7RFSOI technology provides advantage by simultaneously enabling the required level of integration and performance for the large number of switches required in the modern smartphone for example cellular antenna switches, diversity antenna and WLAN.

“We are extremely pleased to expand our strategic relationship with IBM Microelectronics,” said Jean-Paul Beisson, CEO of ALTIS.

"It is another proof that ALTIS is able to provide a competitive solution to worldwide leading customers like IBM and we look forward to this continued collaboration with IBM for many years to come," said Yazid Sabeg, Chairman of ALTIS.

Altis Semiconductor is an independent and long-term innovative European based specialty foundry, servicing the growing demand for high quality end-to-end foundry services. The Altis process portfolio encompasses advanced CMOS based technologies for RF, low power, high performance analog mixed signal, non-volatile embedded memory, and high voltage requirements for a broad range of end market applications, including automotive.

STMicroelectronics yesterday filed a complaint with the United States International Trade Commission (ITC). The complaint requests that the ITC initiate an investigation into the alleged infringement of five ST patents covering all of InvenSense, Inc.’s MEMS device offerings, as well as products from two of InvenSense’s customers: Black and Decker, Inc. and Roku, Inc. ST has requested that the ITC issue an order excluding InvenSense’s infringing gyroscopes and accelerometers, as well its customers’ products that include those InvenSense devices, from importation into the United States.

This is the second patent lawsuit that ST has brought against InvenSense. In May 2012, ST filed a patent infringement lawsuit against InvenSense in the Northern District of California, alleging infringement of nine ST patents and seeking injunctive relief and monetary damages. InvenSense requested a stay of litigation, which the district court granted on February 27, 2013. According to the court’s order, the case was stayed until the United States Patent Office completed its reexamination process and ST completed any appeals of the Patent Offices findings, at which time the parties were to provide the court with a status report on the re-examination.

“Historically, InvenSense developed the first integrated dual-axis MEMS gyroscope for consumer electronics applications, and by 2006, its novel applications in consumer electronics products created very significant customer demand for similar products,” InvenSense spokesperson said, in an official press release, “ST did not enter the consumer MEMS gyroscope market until 2008, when it tried to catch up to InvenSense and target the growing consumer electronics market. “

"While we welcome fair competition, ST cannot tolerate continued infringement of our strong and unique patent portfolio, which is the result of more than 15 years of intensive R&D efforts and substantial investment, to bring competitive and innovative solutions to customers worldwide," said Bob Krysiak, President and Chief Executive Officer of STMicroelectronics.

Historically, STMicroelectronics said in its official press release, over 89% of reexamined patents are confirmed upon ex parte reexamination.

STMicroelectronics itself came under fire in 2007, when SanDisk claimed patent infringement over three different NAND flash patents. The district court sided with STMicroelectronics, even after SanDisk’s appeal.

Driven by the government’s focus on the futuristic Internet of Things – embedding connectivity and intelligence in everyday objects – and a surge in private sector growth, China’s RFID card market will nearly double in value and more than double in units in 2017, according to Lux Research.

The RFID card/tag market volume will grow to 2.11 billion units, from 894 million in 2012, reflecting a compound annual growth rate (CAGR) of 19%. In revenue terms, the market will grow to $807 million in 2017, from $454 million in 2012, at a CAGR of 12%.

“So far, government applications account for 22% of the volume and 34% of the revenue, but that is about to change quickly,” said Richard Jun Li, Lux Research Director and the lead author of the report titled, “Identifying Growth and Threat in China’s Emerging RFID Ecosystem.”

“With the rise of market-driven applications, there are opportunities for multinationals to leverage China’s RFID growth – speed and identification of the best local partnerships will be critical,” he added.

Lux Research analysts studied the Chinese RFID market and government policy to evaluate growth prospects for the industry. Among their findings:

  • Consumer market is the strongest. Driven mainly by the adoption of RFID tags for anti-counterfeiting, consumer applications will grow the fastest in volume terms – at a CAGR of 38% until 2017. Industrial applications will grow at a 25% rate, while electronic toll collection will be a fast-growing subsector.
  • Local OEM players emerging. The rise of Chinese original equipment manufacturer (OEM) suppliers for RFID cards/tags is creating a new industry dynamic. Currently, the top 15 suppliers – led by China Card Group and Tatwah Smartech – account for 57% of the Chinese market and are poised for further gains.
  • Focus is on fast-growing UHF market. Chinese companies do not have as strong a position in superior ultra-high frequency (UHF) chips – which will grow dramatically to become a $236 million market in 2017. However, the clock is ticking for multinational suppliers, as the Chinese government is putting significant resources into developing homemade UHF chips.

The report, titled “Identifying Growth and Threat in China’s Emerging RFID Ecosystem,” is part of the Lux Research China Innovation Intelligence service.

internet of things
By SRI Consulting Business Intelligence/National Intelligence Council [Public domain or Public domain], via Wikimedia Commons

STMicroelectronics announced today that Didier Lamouche, Chief Operating Officer, whose operational role was suspended when he took the assignment as President and Chief Executive Officer at ST-Ericsson in December 2011, has decided to resign from the company effective March 31, 2013 to pursue other opportunities.

"Over the past years Didier has brought his strong contribution to ST, initially as the Chief Operating Officer, and then taking the challenging task to lead ST-Ericsson" said Carlo Bozotti, President and CEO of ST. "We thank him for his outstanding contribution and wish him all the best for his future."

Prior to taking on this role, he was a member of our Supervisory Board and Audit Committee until October 26, 2010. Dr. Lamouche is a graduate of Ecole Centrale de Lyon and holds a PhD in semiconductor technology. He has over 20 years of experience in the semiconductor industry. Dr. Lamouche started his career in 1984 in the R&D department of Philips before joining IBM Microelectronics where he held several positions in France and the United States. In 1995, he became Director of Operations of Motorola’s Advanced Power IC unit in Toulouse, France. Three years later, in 1998, he joined IBM as General Manager of the largest European semiconductor site in Corbeil, France, to lead its turnaround and transformation into a joint venture between IBM and Infineon: Altis Semiconductor. He managed Altis Semiconductor as CEO for four years. In 2003, Dr. Lamouche rejoined IBM and was the Vice President for Worldwide Semiconductor Operations based in New York (United States) until the end of 2004. Since February 2005, Dr. Lamouche has been the Chairman and CEO of Groupe Bull, a France based global company operating in the IT sector. He is also a member of the Board of Directors of SOITEC since 2005, and Adecco since 2011. Dr. Lamouche suspended his operational responsibilities in the Company effective December 1, 2011 in view of his appointment as President and Chief Executive Officer of ST-Ericsson.

According to the latest analysis by Semicast Research, Renesas Electronics was again the leading vendor of semiconductors to the OE automotive sector in 2012, ahead of Infineon Technologies. STMicroelectronics retained its position as third largest supplier, with Freescale fourth and NXP fifth. Semicast calculates that revenues for OE automotive semiconductors grew by 12% to USD $25.5 billion in 2012, while the total semiconductor industry is judged to have declined by almost three percent to USD $292 billion.

Semicast’s OE automotive semiconductor vendor share analysis ranks Renesas Electronics as the leading supplier in 2012, with an estimated market share of 13.3%. Renesas continues to hold a substantial lead over the second placed supplier, Infineon Technologies, which in 2012 had an estimated market share of 8.3%. STMicroelectronics is judged to have been the third largest supplier last year with a market share of 7.4%, ahead of Freescale on 6.6% and NXP on 6.0%.

“The list of vendors making up the top five positions to the OE automotive semiconductor market has remained unchanged since 2006, despite the dramatic rises and falls in the market over this period,” said Colin Barnden, principal analyst at Semicast Research and study author.

Currency movements are likely to have a substantial impact on market shares in 2013, particularly for Renesas which reports in yen. Newly elected Japanese Prime Minister Shinzo Abe has announced plans to depreciate the yen in the short term, to stimulate the Japanese economy and raise domestic inflation to a target of two percent. The progress of this policy can already be seen, with the US dollar/yen exchange rate weakening to 94 yen in early March, from 80 yen before Abe’s election in December 2012, a fall approaching twenty percent. Barnden summed up “The yen has not traded below 100 since March 2009, reflecting its status as a safe haven currency, but this level looks certain to be breached in the months ahead.”

2012 OE Automotive Semiconductor Vendor Share Ranking

 Renesas Electronics    13.3%

Infineon Technologies            8.3%

STMicroelectronics     7.4%

Freescale Semiconductor        6.6%

NXP Semiconductor   6.0%

Top 5 Total      41.6%

Others 58.4%

graphene collapse observed in berkley labThe first experimental observation of a quantum mechanical phenomenon that was predicted nearly 70 years ago holds important implications for the future of graphene-based electronic devices. Working with microscopic artificial atomic nuclei fabricated on graphene, a collaboration of researchers led by scientists with the U.S. Department of Energy’s Lawrence Berkeley National Laboratory (Berkeley Lab) and the University of California (UC) Berkeley have imaged the “atomic collapse” states theorized to occur around super-large atomic nuclei.

“Atomic collapse is one of the holy grails of graphene research, as well as a holy grail of atomic and nuclear physics,” says Michael Crommie, a physicist who holds joint appointments with Berkeley Lab’s Materials Sciences Division and UC Berkeley’s Physics Department. “While this work represents a very nice confirmation of basic relativistic quantum mechanics predictions made many decades ago, it is also highly relevant for future nanoscale devices where electrical charge is concentrated into very small areas.”

Crommie is the corresponding author of a paper describing this work in the journal Science. The paper is titled “Observing Atomic Collapse Resonances in Artificial Nuclei on Graphene.”  Co-authors are Yang Wang, Dillon Wong, Andrey Shytov, Victor Brar, Sangkook Choi, Qiong Wu, Hsin-Zon Tsai, William Regan, Alex Zettl, Roland Kawakami, Steven Louie, and Leonid Levitov.

Originating from the ideas of quantum mechanics pioneer Paul Dirac, atomic collapse theory holds that when the positive electrical charge of a super-heavy atomic nucleus surpasses a critical threshold, the resulting strong Coulomb field causes a negatively charged electron to populate a state where the electron spirals down to the nucleus and then spirals away again, emitting a positron (a positively–charged electron) in the process. This highly unusual electronic state is a significant departure from what happens in a typical atom, where electrons occupy stable circular orbits around the nucleus.

 “Nuclear physicists have tried to observe atomic collapse for many decades, but they never unambiguously saw the effect because it is so hard to make and maintain the necessary super-large nuclei,” Crommie says. “Graphene has given us the opportunity to see a condensed matter analog of this behavior, since the extraordinary relativistic nature of electrons in graphene yields a much smaller nuclear charge threshold for creating the special supercritical nuclei that will exhibit atomic collapse behavior.”

Perhaps no other material is currently generating as much excitement for new electronic technologies as graphene, sheets of pure carbon just one atom thick through which electrons can freely race 100 times faster than they move through silicon. Electrons moving through graphene’s two-dimensional layer of carbon atoms, which are arranged in a hexagonally patterned honeycomb lattice, perfectly mimic the behavior of highly relativistic charged particles with no mass. Superthin, superstrong, superflexible, and superfast as an electrical conductor, graphene has been touted as a potential wonder material for a host of electronic applications, starting with ultrafast transistors.

In recent years scientists predicted that highly-charged impurities in graphene should exhibit a unique electronic resonance – a build-up of electrons partially localized in space and energy – corresponding to the atomic collapse state of super-large atomic nuclei. Last summer Crommie’s team set the stage for experimentally verifying this prediction by confirming that graphene’s electrons in the vicinity of charged atoms follow the rules of relativistic quantum mechanics. However, the charge on the atoms in that study was not yet large enough to see the elusive atomic collapse.

“Those results, however, were encouraging and indicated that we should be able to see the same atomic physics with highly charged impurities in graphene as the atomic collapse physics predicted for isolated atoms with highly charged nuclei,” Crommie says. “That is to say, we should see an electron exhibiting a semiclassical inward spiral trajectory and a novel quantum mechanical state that is partially electron-like near the nucleus and partially hole-like far from the nucleus. For graphene we talk about ‘holes’ instead of the positrons discussed by nuclear physicists.”

Non-relativistic electrons orbiting a subcritical nucleus exhibit the traditional circular Bohr orbit of atomic physics. But when the charge on a nucleus exceeds the critical value, Zc, the semiclassical electron trajectory is predicted to spiral in toward the nucleus, then spiral away, a novel electronic state known as “atomic collapse.” Artificial nuclei composed of three or more calcium dimers on graphene exhibit this behavior as graphene’s electrons move in the supercritical Coulomb potential.

To test this idea, Crommie and his research group used a specially equipped scanning tunneling microscope (STM) in ultra-high vacuum to construct, via atomic manipulation, artificial  nuclei on the surface of a gated graphene device. The “nuclei” were actually clusters made up of pairs, or dimers, of calcium ions. With the STM, the researchers pushed calcium dimers together into a cluster, one by one, until the total charge in the cluster became supercritical. STM spectroscopy was then used to measure the spatial and energetic characteristics of the resulting atomic collapse electronic state around the supercritical impurity.

“The positively charged calcium dimers at the surface of graphene in our artificial nuclei played the same role that protons play in regular atomic nuclei,” Crommie says. “By squeezing enough positive charge into a sufficiently small area, we were able to directly image how electrons behave around a nucleus as the nuclear charge is methodically increased from below the supercritical charge limit, where there is no atomic collapse, to above the supercritical charge limit, where atomic collapse occurs.”

Observing atomic collapse physics in a condensed matter system is very different from observing it in a particle collider, Crommie says. Whereas in a particle collider the “smoking gun” evidence of atomic collapse is the emission of a positron from the supercritical nucleus, in a condensed matter system the smoking gun is the onset of a signature electronic state in the region nearby the supercritical nucleus. Crommie and his group observed this signature electronic state with artificial nuclei of three or more calcium dimers.

“The way in which we observe the atomic collapse state in condensed matter and think about it is quite different from how the nuclear and high-energy physicists think about it and how they have tried to observe it, but the heart of the physics is essentially the same,” says Crommie.

If the immense promise of graphene-based electronic devices is to be fully realized, scientists and engineers will need to achieve a better understanding of phenomena such as this that involve the interactions of electrons with each other and with impurities in the material.

“Just as donor and acceptor states play a crucial role in understanding the behavior of conventional semiconductors, so too should atomic collapse states play a similar role in understanding the properties of defects and dopants in future graphene devices,” Crommie says. “Because atomic collapse states are the most highly localized electronic states possible in pristine graphene, they also present completely new opportunities for directly exploring and understanding electronic behavior in graphene.”

In addition to Berkeley Lab and UC Berkeley, other institutions represented in this work include UC Riverside, MIT, and the University of Exeter.

Berkeley Lab’s work was supported by DOE’s Office of Science.  Other members of the research team received support from the Office of Naval Research and the National Science Foundation. Computational resources were provided by DOE at Berkeley Lab’s NERSC facility.