Category Archives: Advanced Packaging

According to the latest analysis by Semicast Research, Renesas Electronics was again the leading vendor of semiconductors to the OE automotive sector in 2012, ahead of Infineon Technologies. STMicroelectronics retained its position as third largest supplier, with Freescale fourth and NXP fifth. Semicast calculates that revenues for OE automotive semiconductors grew by 12% to USD $25.5 billion in 2012, while the total semiconductor industry is judged to have declined by almost three percent to USD $292 billion.

Semicast’s OE automotive semiconductor vendor share analysis ranks Renesas Electronics as the leading supplier in 2012, with an estimated market share of 13.3%. Renesas continues to hold a substantial lead over the second placed supplier, Infineon Technologies, which in 2012 had an estimated market share of 8.3%. STMicroelectronics is judged to have been the third largest supplier last year with a market share of 7.4%, ahead of Freescale on 6.6% and NXP on 6.0%.

“The list of vendors making up the top five positions to the OE automotive semiconductor market has remained unchanged since 2006, despite the dramatic rises and falls in the market over this period,” said Colin Barnden, principal analyst at Semicast Research and study author.

Currency movements are likely to have a substantial impact on market shares in 2013, particularly for Renesas which reports in yen. Newly elected Japanese Prime Minister Shinzo Abe has announced plans to depreciate the yen in the short term, to stimulate the Japanese economy and raise domestic inflation to a target of two percent. The progress of this policy can already be seen, with the US dollar/yen exchange rate weakening to 94 yen in early March, from 80 yen before Abe’s election in December 2012, a fall approaching twenty percent. Barnden summed up “The yen has not traded below 100 since March 2009, reflecting its status as a safe haven currency, but this level looks certain to be breached in the months ahead.”

2012 OE Automotive Semiconductor Vendor Share Ranking

 Renesas Electronics    13.3%

Infineon Technologies            8.3%

STMicroelectronics     7.4%

Freescale Semiconductor        6.6%

NXP Semiconductor   6.0%

Top 5 Total      41.6%

Others 58.4%

graphene collapse observed in berkley labThe first experimental observation of a quantum mechanical phenomenon that was predicted nearly 70 years ago holds important implications for the future of graphene-based electronic devices. Working with microscopic artificial atomic nuclei fabricated on graphene, a collaboration of researchers led by scientists with the U.S. Department of Energy’s Lawrence Berkeley National Laboratory (Berkeley Lab) and the University of California (UC) Berkeley have imaged the “atomic collapse” states theorized to occur around super-large atomic nuclei.

“Atomic collapse is one of the holy grails of graphene research, as well as a holy grail of atomic and nuclear physics,” says Michael Crommie, a physicist who holds joint appointments with Berkeley Lab’s Materials Sciences Division and UC Berkeley’s Physics Department. “While this work represents a very nice confirmation of basic relativistic quantum mechanics predictions made many decades ago, it is also highly relevant for future nanoscale devices where electrical charge is concentrated into very small areas.”

Crommie is the corresponding author of a paper describing this work in the journal Science. The paper is titled “Observing Atomic Collapse Resonances in Artificial Nuclei on Graphene.”  Co-authors are Yang Wang, Dillon Wong, Andrey Shytov, Victor Brar, Sangkook Choi, Qiong Wu, Hsin-Zon Tsai, William Regan, Alex Zettl, Roland Kawakami, Steven Louie, and Leonid Levitov.

Originating from the ideas of quantum mechanics pioneer Paul Dirac, atomic collapse theory holds that when the positive electrical charge of a super-heavy atomic nucleus surpasses a critical threshold, the resulting strong Coulomb field causes a negatively charged electron to populate a state where the electron spirals down to the nucleus and then spirals away again, emitting a positron (a positively–charged electron) in the process. This highly unusual electronic state is a significant departure from what happens in a typical atom, where electrons occupy stable circular orbits around the nucleus.

 “Nuclear physicists have tried to observe atomic collapse for many decades, but they never unambiguously saw the effect because it is so hard to make and maintain the necessary super-large nuclei,” Crommie says. “Graphene has given us the opportunity to see a condensed matter analog of this behavior, since the extraordinary relativistic nature of electrons in graphene yields a much smaller nuclear charge threshold for creating the special supercritical nuclei that will exhibit atomic collapse behavior.”

Perhaps no other material is currently generating as much excitement for new electronic technologies as graphene, sheets of pure carbon just one atom thick through which electrons can freely race 100 times faster than they move through silicon. Electrons moving through graphene’s two-dimensional layer of carbon atoms, which are arranged in a hexagonally patterned honeycomb lattice, perfectly mimic the behavior of highly relativistic charged particles with no mass. Superthin, superstrong, superflexible, and superfast as an electrical conductor, graphene has been touted as a potential wonder material for a host of electronic applications, starting with ultrafast transistors.

In recent years scientists predicted that highly-charged impurities in graphene should exhibit a unique electronic resonance – a build-up of electrons partially localized in space and energy – corresponding to the atomic collapse state of super-large atomic nuclei. Last summer Crommie’s team set the stage for experimentally verifying this prediction by confirming that graphene’s electrons in the vicinity of charged atoms follow the rules of relativistic quantum mechanics. However, the charge on the atoms in that study was not yet large enough to see the elusive atomic collapse.

“Those results, however, were encouraging and indicated that we should be able to see the same atomic physics with highly charged impurities in graphene as the atomic collapse physics predicted for isolated atoms with highly charged nuclei,” Crommie says. “That is to say, we should see an electron exhibiting a semiclassical inward spiral trajectory and a novel quantum mechanical state that is partially electron-like near the nucleus and partially hole-like far from the nucleus. For graphene we talk about ‘holes’ instead of the positrons discussed by nuclear physicists.”

Non-relativistic electrons orbiting a subcritical nucleus exhibit the traditional circular Bohr orbit of atomic physics. But when the charge on a nucleus exceeds the critical value, Zc, the semiclassical electron trajectory is predicted to spiral in toward the nucleus, then spiral away, a novel electronic state known as “atomic collapse.” Artificial nuclei composed of three or more calcium dimers on graphene exhibit this behavior as graphene’s electrons move in the supercritical Coulomb potential.

To test this idea, Crommie and his research group used a specially equipped scanning tunneling microscope (STM) in ultra-high vacuum to construct, via atomic manipulation, artificial  nuclei on the surface of a gated graphene device. The “nuclei” were actually clusters made up of pairs, or dimers, of calcium ions. With the STM, the researchers pushed calcium dimers together into a cluster, one by one, until the total charge in the cluster became supercritical. STM spectroscopy was then used to measure the spatial and energetic characteristics of the resulting atomic collapse electronic state around the supercritical impurity.

“The positively charged calcium dimers at the surface of graphene in our artificial nuclei played the same role that protons play in regular atomic nuclei,” Crommie says. “By squeezing enough positive charge into a sufficiently small area, we were able to directly image how electrons behave around a nucleus as the nuclear charge is methodically increased from below the supercritical charge limit, where there is no atomic collapse, to above the supercritical charge limit, where atomic collapse occurs.”

Observing atomic collapse physics in a condensed matter system is very different from observing it in a particle collider, Crommie says. Whereas in a particle collider the “smoking gun” evidence of atomic collapse is the emission of a positron from the supercritical nucleus, in a condensed matter system the smoking gun is the onset of a signature electronic state in the region nearby the supercritical nucleus. Crommie and his group observed this signature electronic state with artificial nuclei of three or more calcium dimers.

“The way in which we observe the atomic collapse state in condensed matter and think about it is quite different from how the nuclear and high-energy physicists think about it and how they have tried to observe it, but the heart of the physics is essentially the same,” says Crommie.

If the immense promise of graphene-based electronic devices is to be fully realized, scientists and engineers will need to achieve a better understanding of phenomena such as this that involve the interactions of electrons with each other and with impurities in the material.

“Just as donor and acceptor states play a crucial role in understanding the behavior of conventional semiconductors, so too should atomic collapse states play a similar role in understanding the properties of defects and dopants in future graphene devices,” Crommie says. “Because atomic collapse states are the most highly localized electronic states possible in pristine graphene, they also present completely new opportunities for directly exploring and understanding electronic behavior in graphene.”

In addition to Berkeley Lab and UC Berkeley, other institutions represented in this work include UC Riverside, MIT, and the University of Exeter.

Berkeley Lab’s work was supported by DOE’s Office of Science.  Other members of the research team received support from the Office of Naval Research and the National Science Foundation. Computational resources were provided by DOE at Berkeley Lab’s NERSC facility.

Lattice Semiconductor Corporation today announced the iCE40 LP384 FPGA, the smallest member of its iCE40 family of ultra-low density FPGAs. Enabling designers to rapidly add new features and differentiate cost-sensitive, space-constrained, low-power products, the new small footprint FPGA is ideal for applications such as portable medical monitors, smartphones, digital cameras, eReaders, and compact embedded systems.

The tiny, low-power, low-cost iCE40 LP384 FPGA has a capacity of 384 LUTs; consumes 25-Microwatts static core power; comes in packages as small as 2.5mm x 2.5mm with a migration path to 2.0mm x 2.0mm; and costs less than 50 cents per unit in multi-million unit quantities.

"While system footprints continue to shrink, designers must constantly search for new ways to add more functionality so they can process more information," said Brent Przybus, senior director of Corporate and Product Marketing at Lattice Semiconductor. "The iCE40 LP384 FPGA offers the perfect architecture for capturing and processing large amounts of data at hardware speeds while using very little power and board space. It deftly handles system tasks such as managing sensor interfaces, adapting to new interface standards, and offloading the CPU without requiring fully custom-designed chips."

New applications drive hardware innovation

The exponential growth of handheld applications is creating new challenges for hardware designers. Many new applications today connect end users with data collected from a growing number of sensors that measure natural phenomena such as temperature, moisture, light, and positioning. At the same time the growing use of video is driving the deployment of new low power, display technology that not only enhances the visual experience, but does so without breaking stringent power budgets.

Moreover, small automated control units are now being used to maximize energy efficiency and security in buildings and homes by responding to light, infrared, noise, and by adjusting fans, blinds, and temperature controls. Designers of these types of equipment must find ways to shrink the size of their systems while differentiating their products from competitive market offerings.

The iCE40 LP384

The iCE40 LP384 FPGA includes the programmable logic, flexible IO, and on-chip memory necessary to process data at speeds greater than ASSPs or companion microprocessors while simultaneously reducing power consumption for an equivalent cost. Lattice also provides reference designs and application notes to accelerate development and reduce time-to-market by several months.

Development software

Lattice’s iCEcube2™ development software is a feature-rich development platform for Lattice’s iCE40 FPGAs. It integrates a free synthesis tool with Lattice’s placement and routing tools. It also includes the Aldec Active-HDL™ simulation solution, with Waveform Viewer and an RTL/gate-level mixed-language simulator.

The iCEcube2 design environment also includes key features and functions that help facilitate the design process for mobile applications. These features and functions include a project navigator, constraint editor, floorplanner, package viewer, power estimator, and static timing analyzer. Please contact your local Lattice sales representative for information on how to download a free license for Lattice iCEcube2 software for use with iCE40 LP384 FPGAs.

Global electronic components distributor Digi-Key Corporation today announced the signing of a global distribution agreement with MEMSIC, a provider of MEMS sensor components, sophisticated inertial systems, and leading-edge wireless sensor networks.

“As technology tries to fit more and more functionality into smaller and smaller spaces, MEMS has grown exponentially in utilization,” said Mark Zack, Digi-Key Vice President, Global Semiconductor Product. “By integrating IC and MEMS functionality, MEMSIC offers our customers a unique product to fill a growing need in their designs. We are pleased to partner with MEMSIC.”

MEMSIC designs and manufactures integrated micro-electromechanical sensors (MEMS) using a standard integrated circuit (IC) manufacturing process. The company combines proprietary thermal-based MEMS technology and advanced analog mixed-signal processing circuitry into a single chip. This allows MEMSIC to produce high-performance accelerometers and other MEMS devices at substantially lower cost than most traditional processes.

"Digi-Key is recognized by design engineers worldwide for its excellent service, and for its access to readily available components they can count on for new designs,” noted John Newton, MEMSIC Vice President of Marketing. “We are excited to be partnering with Digi-Key, and believe this agreement will significantly expand MEMSIC’s global reach to design engineers looking for the latest in sensor technology."  

Smartphones are set to become even more flexible and more satisfying to use, thanks to a unique sensor system developed by STMicroelectronics. Combining three optical elements in a single compact package, the VL6180 is the first member of ST’s FlightSense family and uses a new optical-sensing technology that reduces the incidence of dropped calls and enables innovative new user interactions with smartphones.

The VL6180 uses a ground-breaking proximity measuring technology to offer unprecedented accuracy and reliability in calculating the distance between the smartphone and the user. Instead of estimating distance by measuring the amount of light reflected back from the object, which is significantly influenced by color and surface, the sensor precisely measures the time the light takes to travel to the nearest object and reflect back to the sensor. This “Time-of-Flight” approach ignores the amount of light reflected back and only considers the time for the light to make the return journey.

"This marks the first time that Time-of-Flight technology has been made available in a form factor small enough to integrate into the most space-constrained smartphones,” said Arnaud Laflaquière, General Manager of ST’s Imaging Division. “This technology breakthrough brings a major performance enhancement over existing proximity sensors, solving the face hang-up issues of current smartphone and also enabling new innovative ways for users to interact with their devices."

The key to ST’s patented new solution is an infra-red emitter that sends out light pulses, an ultra-fast light detector that picks up the reflected  pulses, and electronic circuitry that accurately measures the time difference between the emission of a pulse and the detection of its reflection.

Combining electronic, optical and packaging unique expertise from across the company, the VL6180 embeds both a robust ranging time-of-flight sensor and a wide dynamic ambient light sensor die, along with an infra-red emitter. Thanks to its all-in-one, ready- to-use architecture, the VL6180 is easy to integrate and saves the phone-makers long and costly optical and mechanical design optimizations.

Addressing dropped calls is not the only benefit that ST’s new technology brings to the smartphone market.  The ability to measure a reliable absolute distance from the phone to a hand or other object opens up new user interaction scenarios that phone manufacturers and app developers can rapidly exploit.

How the semiconductor industry can create the next generations of nanoscale computing technology will be one of the themes of the 2013 International Conference on Frontiers of Characterization and Metrology for Nanoelectronics, to be held at the National Institute of Standards and Technology (NIST), March 25-28, 2013, at its campus in Gaithersburg, Md.

As the devices lying at the heart of computing shrink ever closer to fundamental limits, the semiconductor industry must confront the problem of what to do when conventional microprocessors simply cannot shrink any further. The bi-yearly conference, which will be attended by international representatives from industry, government and academia, should be of interest to anyone concerned about the future of semiconductor manufacturing—a $300 billion industry and a linchpin of the U.S. economy.

Highlights include the three successive keynote addresses beginning at 9 a.m., Tuesday, March 26, by Mike Mayberry, V.P. and Director of Component Research at Intel; Naga Chandrasekaran, V.P. of Process R&D at Micron; and Gyeong-Su Park, Leader of the Analytical Science Group at Samsung Advanced Institute of Technology. Also, at 8:30 a.m., Thursday, March 28, invited speaker Tom Theis of the Nanoelectronics Research Initiative will deliver an address on long-term strategies to replace today’s transistors.

The European Photonics Industry Consortium recently embarked on an ambitious project to map all the companies in Europe active in photonics, which amounts to over 3000 companies. This includes companies based in Europe, a headquarter or regional office, and companies who manufacture or extensively use photonics components, or provide services to the European photonics ecosystem. This could also include software developers, engineers, consultants, resellers and distributors, as well as academia and research organizations, clusters or other players in the photonics industry in Europe. The result will be a spreadsheet and interactive map that will be available to everyone.

To achieve this goal, EPIC is asking companies to participate in an open survey, which can be found here: https://www.surveymonkey.com/s/PhotonicsMapping

The survey will be available online until April 13, 2013 for companies to fill out.

Membership in EPIC is open to companies, research institutes, universities, and financial partners having operations in the European economic area. EPIC is owned and operated by its members. The annual budget is supported by subscription fees which are scaled to encourage participation of SMEs, R&D laboratories and universities, as well as larger companies. EPIC members encompass the entire value chain from LED lighting, PV solar energy, silicon photonics, optical components, lasers, sensors, displays, projectors, optic fiber, and other photonic related technologies.

The total market for open short-range wireless (SRW) technology based ICs, such as Bluetooth, Wi-Fi, ZigBee, NFC, and GPS, is expected to reach almost 5 billion units in 2013 and grow to nearly 8 billion by 2018, according to ABI Research. This includes standalone wireless connectivity ICs, wireless connectivity combo ICs, and also platforms with integrated wireless connectivity.

“In the year where cumulative Bluetooth enabled device shipments will reach 10 billion and cumulative Wi-Fi enabled device shipments will reach 7 billion, we will also see total wireless connectivity IC shipments break through 5 billion per annum,” said Peter Cooney, practice director. “It is truly a momentous year for short-range wireless technology.”

Consumer devices such as mobile phones, laptops, media tablets, games consoles, etc. have been the major driver of SRW technology growth but as many of these devices start to peak it is newer applications such as automotive, home automation, smart energy, retail, and many more that will be the major growth drivers over the next 10 years.

SRW technologies are enabling simple, low-cost connections to be made between multitude devices and helping to make 2013 the year that the Internet of Everything (IoE) hits an inflection point and starts to become a reality. Bluetooth, Wi-Fi, and ZigBee are just a few of many technologies that will enable growth in this market, coupled with proprietary SRW, cellular, white space, and fixed communication technologies, also.

“Without interoperable short-range wireless standards the IoE will not flourish; it requires low-cost, low-power, ubiquitous technologies to create the myriad connections that will be needed,” added Cooney. “Technologies such as Bluetooth Smart (v4.0), ZigBee, and the upcoming 802.11ah standard will be key enablers for IoE.”

eMemory announced today that the accumulated number of customers’ wafers incorporating eMemory’s eNVM SIPs have now surpassed 5 million production mark. eMemory’s eNVM SIPs support a broad range of process platforms including logic, HV, SiGe, RF, and mixed signal throughout 0.5 microns to 40nm technology. They are widely found in mainstream consumer electronic products, such as smart phones and tablet PCs. Due to the increasing demand for hand-held smart devices, the growth in wafer production is expected to remain steady.

The sale of eMemory wafer has enjoyed double-digit growth for several years in a row. In 2012 alone, it saw growth in excess of 36% with over 1.5 million in wafer sales–a new company record. The significant increase in growth has been driven primarily by developments in its popular application areas such as power management ICs, display driver ICs and MEMS sensors. This momentum in growth in wafer production is expected to be accelerated with its additional applications in Full HD Display Driver ICs (DDI), Touch-Panel Controller ICs (TPC) and 2.4GHz RFICs this coming year. In the near future, eMemory will enter more innovative areas of applications, including Battery Gauge ICs, Near-Field Communication (NFC) ICs, CMOS-Image Sensor (CIS) ICs, single-chip Touch Display Driver Integration (TDDI) ICs and Programmable-Gamma (P-Gamma) ICs. This effort will further energize the momentum in growth, with further increased efficiency in broadening the application of SIP platform.

"2012 has been a great year for eMemory’s SIP products,” eMemory President Rich Shen pointed out. “Not only did we break wafer production records, but also we saw more than 37% growth in income from our royalty over the previous year. These achievements are the result of eMemory’s long-term dedication to eNVM SIPs and technical development, as well as our mastery of our SIP production lines and process platforms. Our outstanding sales record is a true testimony of the high level of confidence and support we have received from the clients."

eMemory’s NeoBit OTP technology in 55nm has entered into the pilot-production phase, while other OTP and MTP solutions in advanced modes such as 40nm, 28nm and 20nm are currently in the development and verification phase. eMemory offers diversified SIP production lines to meet with the product needs for having different endurance and density. eMemory’s superior technology and SIPs help customers effectively to reduce the time and costs incurred in developing products, making it the best choice for customers in looking for a partner in eNVM.

Researchers at the National Institute of Standards and Technology (NIST) have demonstrated a solid-state refrigerator that uses quantum physics in micro- and nanostructures to cool a much larger object to extremely low temperatures.

quantum solid state refrigerator from NISTNIST’s prototype solid-state refrigerator uses quantum physics in the square chip mounted on the green circuit board to cool the much larger copper platform (in the middle of the photo) below standard cryogenic temperatures. Other objects can also be attached to the platform for cooling.

What’s more, the prototype NIST refrigerator, which measures a few inches in outer dimensions, enables researchers to place any suitable object in the cooling zone and later remove and replace it, similar to an all-purpose kitchen refrigerator. The cooling power is the equivalent of a window-mounted air conditioner cooling a building the size of the Lincoln Memorial in Washington, D.C.

"It’s one of the most flabbergasting results I’ve seen," project leader Joel Ullom said. "We used quantum mechanics in a nanostructure to cool a block of copper. The copper is about a million times heavier than the refrigerating elements. This is a rare example of a nano- or microelectromechanical machine that can manipulate the macroscopic world."

The technology may offer a compact, convenient means of chilling advanced sensors below standard cryogenic temperatures—300 milliKelvin (mK), typically achieved by use of liquid helium—to enhance their performance in quantum information systems, telescope cameras, and searches for mysterious dark matter and dark energy.

As described in Applied Physics Letters, the NIST refrigerator’s cooling elements, consisting of 48 tiny sandwiches of specific materials, chilled a plate of copper, 2.5 centimeters on a side and 3 millimeters thick, from 290 mK to 256 mK. The cooling process took about 18 hours. NIST researchers expect that minor improvements will enable faster and further cooling to about 100 mK.

The cooling elements are sandwiches of a normal metal, a 1-nanometer-thick insulating layer, and a superconducting metal. When a voltage is applied, the hottest electrons "tunnel" from the normal metal through the insulator to the superconductor. The temperature in the normal metal drops dramatically and drains electronic and vibrational energy from the object being cooled.

NIST researchers previously demonstrated this basic cooling method, but are now able to cool larger objects that can be easily attached and removed. Researchers developed a micromachining process to attach the cooling elements to the copper plate, which is designed to be a stage on which other objects can be attached and cooled. Additional advances include better thermal isolation of the stage, which is suspended by strong, cold-tolerant cords.

Cooling to temperatures below 300 mK currently requires complex, large and costly apparatus. NIST researchers want to build simple, compact alternatives to make it easier to cool NIST’s advanced sensors. Researchers plan to boost the cooling power of the prototype refrigerator by adding more and higher-efficiency superconducting junctions and building a more rigid support structure.

This work is supported by the National Aeronautics and Space Administration.