Category Archives: SST

Bruker Corporation today announced the appointment of Thomas Bachmann as the new president of its Bruker BioSpin Group. Bachmann most recently served as CEO of Tecan Group in Switzerland, a global provider of complex laboratory instrumentation and integrated liquid-handling workflow solutions for life science research and diagnostics.

The Bruker BioSpin Group is the global market and technology leader in analytical and preclinical magnetic resonance instrumentation, with major operations in Germany, Switzerland, France and the United States, as well as numerous applications and customer service centers around the world. The Bruker BioSpin Group operates in two divisions:

  • Magnetic Resonance Spectroscopy (MRS) division, consisting of the three business units nuclear magnetic resonance (NMR), electron paramagnetic resonance (EPR) and compact magnetic resonance (CMR)
  • Preclinical Imaging (PCI) division, consisting of the preclinical imaging product lines magnetic resonance imaging (MRI), magnetic particle imaging (MPI), X-ray micro-CT, as well as optical and PET/SPECT/CT molecular imaging.

“I am very pleased to welcome Thomas Bachmann to Bruker,” said Frank Laukien, Bruker’s president and CEO. “His life-science background and his broad management experience will allow him to lead our excellent BioSpin management team in order to further accelerate our innovation, profitable growth and operational excellence initiatives. Thomas will be a valuable addition for all of Bruker due to his diversified industrial experience, his global customer and operations exposure, and his successful track record.”

“I am delighted to join Bruker, and together with an experienced management team I look forward to further developing the Bruker BioSpin Group,” Bachmann said.

Thomas Bachmann brings over twenty-five years of global experience in sales and marketing, in leading and transforming complex businesses, as well as in strategy and business development to his new role as Bruker BioSpin Group President, including experience as a CEO of two publicly traded companies. From 2005 until 2012, Bachmann served as CEO of Tecan Group, where he increased operational effectiveness, expanded into new businesses, developed emerging markets, created a solid organization, established regulatory competence and compliance, grew profitability and built a strong balance sheet. From 2002 until 2004, he was CEO of the Arbonia-Forster Group’s Steel Systems Business, a global provider of building supplies. From 1985 until 2002, Bachmann served in various roles as global Sales and Marketing Director, Business Unit Director and Senior Vice President of Corporate Development at Rieter Holding, a global provider of textile machinery and plants, as well as an automotive supplier of acoustic- and thermal insulation systems. Bachmann holds a B.Sc. in Mechanical Engineering and an Executive MBA from IMD Business School in Switzerland.

Applied Materials, Inc. announced today that its board of directors has appointed Gary E. Dickerson as president and chief executive officer and Michael R. Splinter as executive chairman of the board of directors, effective September 1, 2013. Dickerson also was elected a member of the board of directors, effective at the same time. Dickerson is currently president of Applied Materials and succeeds Splinter who has served as the company’s CEO since 2003.

Applied Materials’ Mike Splinter (L) will become executive chairman of the Board of Directors and Gary Dickerson (R) will become president and CEO and a member of the board of directors, effective Sept. 1, 2013. Dickerson has served as president since June 2012 and was previously CEO of Varian Semiconductor Equipment Associates Inc., which was acquired by Applied Materials in 2011.  Splinter has been CEO since 2003.

"As president, Gary has proved to be an outstanding leader and partner, focusing Applied on new strategies for profitable growth through our unmatched strength in precision materials engineering," said Mike Splinter.  "I welcome him to the Board and have every confidence that his vision and personal drive will translate into remarkable success in leading Applied Materials as our next CEO."

"Today, Applied Materials enjoys a stronger foundation than ever before on which to build momentum for growth," said Gary Dickerson.  "We have better and broader technology, very deep talent and the passion to drive the materials innovation that will provide the device performance and yield solutions our customers need to advance and win.  Our opportunities have never been greater and I am grateful to Mike and the board for the privilege to lead Applied into a new era of growth and success."

A long-time industry leader, Gary Dickerson, 56, has a demonstrated track record of delivering growth in revenue and profits while achieving recognition for outstanding customer satisfaction and gaining market share. Dickerson served for seven years as CEO of Varian Semiconductor Equipment Associates, Inc. until its acquisition by Applied Materials in 2011 and spent 18 years at KLA-Tencor Corporation where he held a variety of operations and product development roles before serving as president and chief operating officer.  He earned a BS degree in Engineering Management from the University of Missouri, Rolla and an MBA from the University of Missouri, Kansas City.

Mike Splinter, 62, was named president and chief executive officer of Applied Materials and a member of its board of directors in 2003, and became chairman of the board in 2009. Splinter is a 40-year veteran of the semiconductor industry and has led Applied to record revenue and profits during his tenure as CEO. This fall, he will receive the Semiconductor Industry Association’s 2013 Robert N. Noyce Award for his outstanding achievements and leadership in support of the semiconductor industry.

Read more: Applied Materials CEO receives 2013 SIA Robert N. Noyce Award

The market for semiconductors used in industrial electronics applications relished a better-than-expected first quarter as macroeconomic headwinds turned out to be less severe than initially feared, according to the latest Industrial Electronics report from information and analytics provider IHS.

Worldwide industrial electronics chip revenue in the first quarter reached $7.71 billion, up 1 percent from $7.63 billion in the final quarter of 2012. Although the uptick seemed modest, the increase marked a turnaround from the three percent decline in the fourth quarter. It also represents a major improvement compared to the 3 percent contraction of the market a year ago in the first quarter of 2011, as shown in the figure below.

 

“The industrial semiconductor market’s performance was encouraging, especially in light of continuing global economic uncertainty and the seasonal nature of the market, which typically sees slower movement in the first quarter of every year,” said Robbie Galoso, principal analyst for electronics at IHS. “Some large segments of the industry, particularly avionics and oil and gas process-automation equipment, saw muscular double-digit gains, helping to drive up overall revenue.”

In another positive development, several large industrial semiconductor suppliers also reported very lean inventories because of strong orders from customers. Infineon Technologies of Germany, Analog Devices of Massachusetts, and Dallas-based Texas Instruments all posted a sequential decline in industrial chip stockpiles as their days of inventory (DOI) measure fell well below average. Infineon achieved higher sales from increased volume in isolated-gate bipolar transistor (IGBT) chips; Analog Devices was strong in factory automation and medical instrumentation; and Texas Instruments saw growth in its analog products.

Other companies reporting sound increases during the period were Xilinx of California for its test and measurement, military aerospace and medical product lines; and Microsemi, also from California, which likewise enjoyed expansion in medical electronics along with broad-based growth for the period.

Europe’s woes inhibit industry, but China counters with growth

However, the industry was not without its challenges, with the Eurozone crisis causing the most havoc.

Read more: Regional developments to affect the growth of semiconductor industry

“The financial troubles on the continent, particularly in Greece, Italy and Spain, had the effect of stifling growth as a whole, especially in the commercial market for building and home control,” Galoso said. “As a result, the individual sectors for lighting, security, climate control and medical imaging were deleteriously impacted in the first quarter, compared to positive performance for those areas in the fourth quarter of 2012.

In contrast to Europe’s woes was China, which displayed growth momentum and much-improved demand across a number of industrial end markets. Manufacturers like Siemens of Germany, Philips of the Netherlands, Swiss-based ABB and Schneider Electric of France said their first-quarter sales in China improved from the earlier quarter.

In the rare earth industrial sector, however, China’s hold on the market loosened as rare earth prices started going south this year. China had a more than 90 percent monopoly on rare earth elements in the past, but new sources in Australia, the United States, Brazil, Canada and South Africa have opened up the market, decreasing dependence on China.

Products that incorporate rare earth materials include wind turbines, rechargeable batteries for electric vehicles and defense applications, including jet-fighter engines, missile guidance systems, and space satellites and communications systems.

Aerospace flies high; oil and gas equipment is also a winner

The military and civil aerospace market had the most robust performance among all industrial semiconductor segments in the first quarter. Avionics was especially vigorous, driven by commercial aircraft sales from pan-European entity EADS Airbus and U.S. maker Boeing, up 9 percent and 14 percent, respectively, on the quarter.

The oil and gas exploration market also saw solid revenue growth, with strong subsea systems and drilling equipment driving sales for ABB, Honeywell and GE.

In contrast to those high-performing segments, lackluster sales were reported in the markets for building and home control, for energy generation and distribution, and for test and measurement. One other market, manufacturing and process automation, reported stable growth, even though its sector for motor drives remained in negative territory.

Maxim Integrated Products, Inc. announced it has entered into a definitive agreement to acquire Volterra Semiconductor Corp. for $23 per share, which represents a 55 percent premium to Volterra Semiconductor’s closing share price on August 14, 2013. The transaction value is approximately $605 million equity value or $450 million net of Volterra’s cash position of approximately $155 million.

Volterra is a provider in high-current, high-performance, and high-density power management solutions. The company develops highly integrated solutions primarily for the enterprise, cloud computing, communications, and networking markets. Volterra’s portfolio of highly integrated products enables better performance, smaller form factors, enhanced scalability, improved system management, and lower total cost of ownership.

"Maxim Integrated is known for its highly integrated solutions. With Volterra, we will strengthen our position in the enterprise and communications markets," said Tunç Doluca, Maxim’s president and chief executive officer. "We add a very talented team and leading-edge proprietary technology in high-current power management solutions, which further diversifies our business model."

"This is an attractive transaction for our employees, customers, and investors," said Jeffrey Staszak, Volterra’s president and chief executive officer. "The Volterra team will build upon Maxim’s scale and market leadership to expand our ability to deliver innovative and differentiated products to our customers.”

At $9 billion, power management is currently the largest and fastest-growing product segment in the analog market, according to Databeans. Maxim offers a broad portfolio of products for power conversion: switching regulators, linear regulators, charge pumps, digital Point-of-Load (POL) converters, and Power Management Integrated Circuits (PMICs), primarily in medium-to-low current applications.

Pending regulatory approvals, Maxim’s acquisition of Volterra is expected to close early in the December quarter.

Skyera Inc. today announced it has selected 16nm NAND Flash from SK Hynix for its new skyEagle all-Flash enterprise storage array.

"We believe that building a strategic partnership with Skyera will open a new window to bring broad and deep expertise in Flash technology system-level issues to complement the world-class semiconductor excellence of SK Hynix," said Young Joon Choi, senior vice president of SK Hynix. "This pairing ensures that the industry’s very best Flash technology experts will be guiding this collaboration as the two companies continue to produce Flash chips and systems that raise the bar for the rest of the market."

"This is an exciting partnership that combines the expertise of one of the leaders in NAND Flash and the leader in all-Flash enterprise storage systems to ensure that the technology is optimized for new generations of enterprise applications," said Radoslav Danilak, CEO of Skyera. "The information exchange between Skyera’s team of elite Flash storage system designers and the chip design expertise and cutting-edge manufacturing process optimization of SK Hynix offers staggering potential for the future of enterprise Flash storage."

Skyera is the only enterprise array vendor with advanced Flash management technology that can take advantage of the cost and capacity benefits of the most advanced NAND Flash media, yet still deliver IOPS performance and durability that exceed enterprise standards. Skyera’s third-generation adaptive Flash controller, as implemented in the company’s new skyEagle solid-state array, provides a 5-year Flash life cycle at a price point now even lower than HDD-based enterprise storage arrays.  To achieve comparable performance and durability with conventional Flash controllers requires other array vendors to use older generation, more expensive eMLC or SLC Flash and sacrifice the density and capacity of the newest 16nm Flash chips.

View Inc. today announced Harold Hughes, a semiconductor industry veteran, is joining the company’s board of directors. Hughes previously held positions of CEO of Rambus and CFO of Intel and brings extensive experience driving global commercialization of innovative technology-oriented products.

"We are excited to welcome Harold to the View board of directors," said Dr. Rao Mulpuri, CEO of View Inc. "View is rapidly expanding its commercial capability and manufacturing operations to support the strong market momentum for our dynamic glass product.  Harold has held key leadership positions in innovative technology companies, and brings broad financial, operating and business strategy credentials to our board at this important juncture."

Hughes brings to View more than 30 years of experience in the high technology industry, including service as a corporate officer in major multi-national companies.  Hughes served as a director of Rambus Inc., a chip interface company from 2003 to 2012 and as its chief executive officer and president from 2005 to 2012.  He started his career as a United States Army Officer before starting his private sector career at Intel.  He held a variety of positions within Intel including treasurer, vice president of Intel Capital, chief financial officer, and vice president of planning and logistics. Following his tenure at Intel, Hughes was the chairman and chief executive officer of Pandesic, LLC. Hughes currently also serves on the board of directors of Cortina Systems and Cresta Tech.  He holds a B.A. in Liberal Arts from the University of Wisconsin and an M.B.A. from the University of Michigan.

"I’m excited to join View to help scale the company and its game-changing dynamic glass technology," Hughes said.  "I believe View has the right product and a world-class management team dedicated to bringing this technology into the mainstream.  I look forward to supporting View’s continued success."

The Storage Products Business Unit of Toshiba is pleased to announce that its solid state hybrid drive (SSHD) series has been honored with a Best of Show Award at this year’s Flash Memory Summit. The award, which recognizes excellence in innovation and flash memory consumer applications, was presented at the 8th Annual Flash Memory Summit at the Santa Clara Convention Center.

Read more: Micron 16nm NAND wins Flash Memory Summit Best of Show Award

Toshiba’s MQ01ABFH and MQ01ABDH SSHD series is equipped with Toshiba’s NAND flash and available in capacities ranging from 320GB to 1TB and in 7mm and 9.5mm form factors. The series continues Toshiba’s legacy of providing world-class storage products, and offers customers a complete lineup of 2.5-inch solid state hybrid drives for ultrathin, thin and light notebook PCs, multimedia and gaming applications, and traditional laptop PCs.

Flash memory is being used today in ways that raise the bar of innovation when coupled with hard drive technology to create hybrid storage solutions addressing applications which require accelerated performance and high capacity,” said Jay Kramer, Chairman of the Awards Program and President of Network Storage Advisors Inc. “We are proud to select Toshiba Solid State Hybrid Drive for the Best of Show Award based on bringing to market the innovation of ‘self-learning’ caching algorithms that learn the system user’s data access patterns to optimize performance and manage how user data is stored to the NAND Flash for quick response and integrated to the high capacity hard drive storage for the best of both worlds.”

“Toshiba’s SSHD series reflects our continued devotion to create innovative storage technology,” said Don Jeanette, director of product marketing at Toshiba Storage Products Business Unit. “Flash Memory Summit is one of the leading events in the storage industry, and Toshiba is honored to receive such recognition.”

Micron Technology, Inc. announced that its 16-nanometer (nm) NAND process technology has been chosen by Flash Memory Summit as the 2013 Best of Show award winner in the category of Most Innovative Flash Memory Technology. The annual Best of Show Awards are a premier opportunity for industry recognition of innovative products and solutions and how they are being used in the marketplace.

Read more: Micron unveils 16nm Flash memory technology

Micron’s 128Gb MLC NAND Flash memory devices are targeted at consumer SSDs, removable storage (USB drives and Flash cards), tablets, ultrathin devices, mobile handsets and data center cloud storage. They provide the greatest number of bits per square millimeter and the lowest cost of any MLC device in existence. In fact, the new technology could create nearly 6TB of storage on a single wafer.

"We’re thrilled with this recognition of our latest development in Flash technology," said Glen Hawk, vice president of Micron’s NAND Solutions Group. "This is a very cost-effective, capital-friendly technology that will be ramping this year and into next year."

Winning products were judged by a panel of industry experts who evaluated each nomination according to the following criteria:

  • Distinctiveness of the application, technology, or product
  • Central use of Flash memory as a solution or innovation
  • Technical and business significance to the general marketplace

"The judges of the Flash Memory Summit Awards Committee had the challenging assignment of selecting the most innovative Flash memory technology from an incredibly large pool of quality submissions. The industry’s advances in semiconductor technology is of paramount value in raising the bar with Flash technology," said Jay Kramer," Chairman of the Awards Program and President of Network Storage Advisors, Inc.

"We are proud to select Micron’s 16nm NAND technology, enabling the industry’s smallest 128Gb multilevel cell (MLC) NAND Flash devices, for the Best of Show Innovation Award."

Micron was honored at the Flash Memory Summit Awards evening reception in the Exhibit Hall on Wednesday, August 14.

 

Flexible thin film solar cells that can be produced by roll-to-roll manufacturing are a highly promising route to cheap solar electricity. Now scientists from Empa, the Swiss Federal Laboratories for Materials Science and Technology, have made significant progress in paving the way for the industrialization of flexible, light-weight and low-cost cadmium telluride (CdTe) solar cells on metal foils. They succeeded in increasing their efficiency from below eight to 11.5 percent by doping the cells with copper, as they report in the current issue of “Nature Communications.”

In order to make solar energy widely affordable scientists and engineers all over the world are looking for low-cost production technologies. Flexible thin film solar cells have a huge potential in this regard because they require only a minimum amount of materials and can be manufactured in large quantities by roll-to-roll processing. One such technology relies on cadmium telluride (CdTe) to convert sunlight into electricity. With a current market share that is second only to silicon-based solar cells CdTe cells already today are cheapest in terms of production costs. Grown mainly on rigid glass plates, these so-called superstrate cells have, however, one drawback: they require a transparent supporting material that lets sunlight pass through to reach the light-harvesting CdTe layer, thus limiting the choice of carriers to transparent materials.

The inversion of the solar cell’s multi-layer structure – the so-called substrate configuration – would allow further cost-cuttings by using flexible foils made of, say, metal as supporting material. Sunlight now enters the cell from the other side, without having to pass through the supporting substrate. The problem, though, is that CdTe cells in substrate configuration on metal foil thus far exhibited infamously low efficiencies well below eight percent – a modest comparison to the recently reported record efficiency of 19.6 percent for a lab-scale superstrate CdTe cell on glass. (Commercially available CdTe superstrate modules reach efficiencies of between 11 and 12 percent.)

Copper doping for solar cells

One way to increase the low energy conversion efficiency of substrate CdTe cells is p-type doping of the semiconductor layer with minute amounts of metals such as copper (Cu). This would lead to an increase in the density of “holes” (positive charge carriers) as well as their lifetimes, and thus result in a high photovoltaic power, the amount of sunlight that is turned into electrical energy. A perfect idea – if CdTe weren’t so notoriously hard to dope. “People have tried to dope CdTe cells in substrate configuration before but failed time and again,” explains Ayodhya Nath Tiwari, head of Empa’s laboratory for Thin Films and Photovoltaics.

His team decided to try nonetheless using high-vacuum Cu evaporation onto the CdTe layer with a subsequent heat treatment to allow the Cu atoms to penetrate into the CdTe. They soon realized that the amount of Cu had to be painstakingly controlled: if they used too little, the efficiency wouldn’t improve much; the very same happened if they “over-doped.”

The electronic properties improved significantly, however, when Lukas Kranz, a PhD student in Tiwari’s lab, together with Christina Gretener and Julian Perrenoud fine-tuned the amount of Cu evaporation so that a mono-atomic layer of Cu would be deposited on the CdTe.

“Efficiencies increased dramatically, from just under one percent to above 12,” says Kranz. Their best value was 13.6 percent for a CdTe cell grown on glass; on metal foils Tiwari’s team reached efficiencies up to 11.5 percent.

Increasingly ambitious targets: hitting the 20 percent ceiling

For now, the highest efficiencies of flexible CdTe solar cells on metal foil are still somewhat lower than those of flexible solar cells in superstrate configuration on a special (and expensive) transparent polyimide foil, developed by Tiwari’s team in 2011. But, says co-author Stephan Buecheler, a group leader in the lab: “Our results indicate that the substrate configuration technology has a great potential for improving the efficiency even further in the future.” Their short-term goal is to reach 15 percent.

“But I’m convinced that the material has the potential for efficiencies exceeding 20 percent.”

The next steps will focus on decreasing the thickness of the so-called window layer above the CdTe, including the electrical front contact. This would reduce light absorption and, therefore, allow more sunlight to be harvested by the CdTe layer.

“Cutting the optical losses” is how Tiwari calls it.

The study was supported by the Swiss National Science Foundation (SNSF) and the Competence Center Energy and Mobility of the ETH Domain (CCEM-Dursol).

A team at the University of California, Riverside Bourns College of Engineering has developed a novel way to build what many see as the next generation memory storage devices for portable electronic devices including smart phones, tablets, laptops and digital cameras.

The device is based on the principles of resistive memory, which can be used to create memory cells that are smaller, operate at a higher speed and offer more storage capacity than flash memory cells, the current industry standard. Terabytes, not gigbytes, will be the norm with resistive memory.

Read more: Crossbar unveils resistive RAM with simple, three-layer structure

The key advancement in the UC Riverside research is the creation of a zinc oxide nano-island on silicon. It eliminates the need for a second element called a selector device, which is often a diode.

"This is a significant step as the electronics industry is considering wide-scale adoption of resistive memory as an alternative for flash memory," said Jianlin Liu, a professor of electrical engineering at UC Riverside who is one of the authors of the paper. "It really simplifies the process and lowers the fabrication cost."

resistive RAM; nano island on silicon
This is a series of images that shows the zinc oxide nano-island on silicon and the three modes of the operation.

The findings were published online this week in the journal Scientific Reports, which is part of Nature Publishing Group. The paper is called "Multimode Resistive Switching in Single ZnO Nanoisland System."

Liu’s co-authors were: Jing Qi, a former visiting scholar in Liu’s lab and now an associate professor at Lanzhou University in China; Mario Olmedo, who earned his Ph.D. from UC Riverside and now works at Intel; and Jian-Guo Zheng, a director of the Laboratory of Electron and X-ray Instrumentation at UC Irvine.

Flash memory has been the standard in the electronics industry for decades. But, as flash continues to get smaller and users want higher storage capacity, it appears to reaching the end of its lifespan, Liu said.

With that in mind, resistive memory is receiving significant attention from academia and the electronics industry because it has a simple structure, high-density integration, fast operation and long endurance.

Researchers have also found that resistive memory can be scaled down in the sub 10-nanometer scale. Current flash memory devices are roughly using a feature size twice as large.

Resistive memory usually has a metal-oxide-metal structure in connection with a selector device. The UC Riverside team has demonstrated a novel alternative way by forming self-assembled zinc oxide nano-islands on silicon. Using a conductive atomic force microscope, the researchers observed three operation modes from the same device structure, essentially eliminating the need for a separate selector device.