Device Architecture

DEVICE ARCHITECTURE ARTICLES



TriQuint to boost GaN power amplifiers for DARPA

09/24/2012 

TriQuint Semiconductor says it has received a $2.7M contract from the Defense Advanced Research Projects Agency (DARPA) to triple the power handling performance of gallium nitride (GaN) circuits.

TSMC integrates Ge on Si in p-type FinFETs

09/20/2012 

At this year’s International Electron Devices Meeting (IEDM), foundry TSMC will describe a heterogeneous epitaxial growth process which for the first time enables Ge to be directly grown on Si.

Horizontal channels key to ultra-small 3D NAND

09/20/2012 

The first working 3D NAND flash memory at sub-40nm feature sizes will be described by Macronix researchers at this year’s International Electron Devices Meeting (IEDM).

RRAM synapses mimic the brain

09/20/2012 

At this year’s IEDM, a team led by Korea’s Gwangju Institute of Science and Technology will detail a high-speed pattern-recognition system comprising CMOS “neurons” and an array of resistive-RAM (RRAM)-based “synapses,” which demonstrated STDP, a brain-like function.

Molybdenum sulfide: the new graphene?

09/20/2012 

Researchers have begun to investigate a new 2D material—molybdenum sulfide (MoS)—which has similar characteristics but offers something graphene doesn’t: a wide energy bandgap, enabling transistors and circuits to be built from it directly.

On-board heaters can self-heal flash memories

09/20/2012 

At the upcoming International Electron Device Meeting, Macronix researchers will describe how they built flash memories that could heal themselves by means of tiny onboard heaters that provide thermal annealing just at the spots where it is needed.

Everspin to unveil highest-density ST-MRAM

09/20/2012 

In an invited paper at the International Electron Devices Meeting, researchers from Everspin Technologies will describe how they built the largest functional ST-MRAM circuit ever built, a 64-Mb device with good electrical characteristics.

Better than FinFETs: Hybrid-Channel SOI

09/20/2012 

At the International Electron Devices Meeting (IEDM) in December, a team led by IBM will report on the world’s first high-performance hybrid-channel ETSOI CMOS device.The researchers built a ring oscillator circuit to benchmark performance that worked even better than FinFETs.

Why IC market growth will expand despite economic and technology challenges

09/20/2012 

Even with the persistent troubles in global economics and various technology hurdles in advanced semiconductor manufacturing, IC market growth will continue to improve -- and the key is a shift away from what's been driving the market dynamics, explains IC Insights.

China's IMR orders Aixtron system for carbon nanotube, graphene research

09/20/2012 

The Institute of Metal Research (IMR) at the Chinese Academy of Sciences has ordered a new Aixtron tool to support its research in carbon nanotubes and graphene technologies.

X-Fab offering MEMS 3D inertial sensor process

09/19/2012 

X-Fab Silicon Foundries has debuted an open-platform MEMS 3D inertial sensor process, what it claims is the first to be made available directly from a high-volume pure-play foundry.

IEDM unveils 2012 program highlights

09/17/2012 

The 58th annual IEDM will take place December 10-12, 2012 at the San Francisco Hilton Union Square, preceded by a full day of Short Courses on Sunday, Dec. 9 and by a program of 90-minute afternoon tutorial sessions on Saturday, Dec. 8.

IBM gets sneak-peek at a molecule's bonds

09/17/2012 

IBM researchers have peered further inside a molecule's structure to distinguish the individual bonds, pointing the way to building an understanding of how graphene devices could work.

iPhone 5: Which semiconductor suppliers are the big winners?

09/14/2012 

As the dust settles after the launch of the iPhone 5, analysts tally which suppliers in the semiconductor ecosphere are most likely to gain the most.

Dow launches CMP polishing pad platform

09/14/2012 

Dow Electronic Materials introduced its new IKONIC polishing pad platform for chemical mechanical planarization (CMP).

NIST tips "hybrid" metrology method to test chips

09/13/2012 

The National Institute of Standards and Technology (NIST) says it's combined scanning techniques and statistical data to both more precisely and less expensively measure features on a chip -- and two big chip firms are already on board.

Samsung breaks ground on Chinese NAND fab

09/12/2012 

Samsung Electronics Co., Ltd. has held a groundbreaking ceremony for a new leading-edge NAND memory fab line in Xi'an, China, to be fully on line by 2014 making "10nm-class" process technologies.

Scotch tape induces high-temp superconductivity

09/12/2012 

A team led by University of Toronto physicists has developed a simple new technique using Scotch poster tape that has enabled them to induce high-temperature superconductivity in a semiconducto.

SRC honors professors from UC Berkeley and MIT

09/12/2012 

Semiconductor Research Corporation (SRC) recognized two outstanding professors in SRC-supported, chip-related research and education for 2012.

Tablets, smartphones driving turnaround in power management chips

09/11/2012 

Demand for power management semiconductors recovered in 2Q12 after declining for half a year, thanks to strong demand from electronic products such as smartphones and media tablets, according to IHS iSuppli.




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Environment, Safety & Health

Date and time TBD

The semiconductor industry is an acknowledged global leader in promoting environmental sustainability in the design, manufacture, and use of its products, as well as the health and safety of its operations and impacts on workers in semiconductor facilities (fabs). We will examine trends and concerns related to emissions, chemical use, energy consumption and worker safety and health.

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Wafer Processing

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As the industry moves to 10nm and 7nm nodes, advances in wafer processing – etch, deposition, planarization, implant, cleaning, annealing, epitaxy among others – will be required. Manufacturers are looking for new solutions for sustained strain engineering, FinFETs, FDSOI and multi-gate technologies, 3D NAND, and high mobility transistors.

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