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WEBCASTS
 Environment, Safety & Health Date and time TBD The semiconductor industry is an acknowledged global leader in promoting environmental sustainability in the design, manufacture, and use of its products, as well as the health and safety of its operations and impacts on workers in semiconductor facilities (fabs). We will examine trends and concerns related to emissions, chemical use, energy consumption and worker safety and health.
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Wafer Processing Date and time TBD As the industry moves to 10nm and 7nm nodes, advances in wafer processing etch, deposition, planarization, implant, cleaning, annealing, epitaxy among others will be required. Manufacturers are looking for new solutions for sustained strain engineering, FinFETs, FDSOI and multi-gate technologies, 3D NAND, and high mobility transistors.
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University of California, San Diego (UC San Diego) engineers developed the first ultra compact, low power pulse compressor on a silicon chip to be described in the scientific literature.
Nick Kepler, Globalfoundries presenter at the IEEE Bay Area Nanotechnology Council’s Half-day Symposium, described the company’s rationale for selecting the gate-first approach to HK+MG processing. Kepler also discusses EUV lithography (EUVL) use at 20nm.
Di Ma spoke with Debra Vogler, senior technical editor, ElectroIQ, about TSMC's work with silicon interposers, die stacking with through-silicon vias (TSV), and gate-last transistor fab.
Five factors drove TSMC's decision to select the gate-last approach: speed, power, reliability, manufacturability, and scalability. Di Ma, VP, field technical support at TSMC, speaks with ElectroIQ about TSMC’s efforts with respect to transistor architecture beyond HK+MG.
Christopher Bencher, member of the technical staff at Applied Materials, gave a presentation at the IEEE Bay Area Nanotechnology Council’s Half-day Symposium on process and integration-based scaling for 15nm nodes. In an interview with Debra Vogler, senior technical editor, Bencher discussed the company’s development work at 15nm.
Laura Peters, contributing editor, covers a team led by the National Nano Device Laboratories (Hsinchu, Taiwan), which has achieved a record external quantum efficiency (QE) of >80% for photodiodes in the visible regime. This QE was achieved by harnessing an LSPR effect, which enhances transmission efficiency in a conventional silicon photodiode. The team will present their results at IEDM.
HBr with consistently low water vapor levels is critical to prevent delivery system corrosion and device performance issues during trench etch for CMOS fabrication. Jianlong Yao et al, Matheson, present the effect of cylinder material on delivered moisture concentration in gas phase HBr. Polished AISI Cr-Mo steel, Nickel-lined AISI Cr-Mo steel, and 316L stainless steel cylinders show markedly different results.
Samsung Electronics Co. Ltd. became the only Top 5 DRAM supplier to achieve revenue growth in Q3 2010, solidifying its domination of the market, according to the market research firm iSuppli Corp. Micron continued to stumble, but will it fall in 2011?