Device Architecture

DEVICE ARCHITECTURE ARTICLES



Cautious optimism

06/15/2018  The World Bank just updated its multiyear forecast for GDP growth both globally and by country.

pSemi GaN FET driver delivers fast switching to solid-state LiDAR systems

06/14/2018  pSemi Corporation (formerly known as Peregrine Semiconductor), a Murata company focused on semiconductor integration, announces the availability of the PE29101 gallium nitride (GaN) field-effect transistor (FET) driver for solid-state light detection and ranging (LiDAR) systems.

WIN Semiconductors releases new platform integrating high performance 0.1um GaAs pHEMT with monolithic PIN and vertical Schottky diodes

06/13/2018  WIN Semiconductors Corp, the world's largest pure-play compound semiconductor foundry, has expanded its portfolio of highly integrated GaAs technologies with the release of a new pHEMT technology.

NXP introduces new high power RF products for 5G networks

06/12/2018  Company expands its Gallium Nitride (GaN) and LDMOS technology portfolios to offer a full range of high power products.

pSemi expands digital step attenuator portfolio with high-performance DSAs

06/12/2018  pSemi Corporation, a Murata company focused on semiconductor integration, announces the expansion of its digital step attenuator (DSA) portfolio with a family of value, high-performance DSAs.

Semiconductor equipment record spending streak to continue through 2019

06/12/2018  The semiconductor industry is nearing a third consecutive year of record equipment spending with projected growth of 14 percent (YOY) in 2018 and 9 percent in 2019, a mark that would extend the streak to a historic fourth consecutive growth year, according to the latest update of the World Fab Forecast report published by SEMI.

Silicon provides means to control quantum bits for faster algorithms

06/11/2018  Research groups from Purdue University, the Technological University of Delft, Netherlands and the University of Wisconsin-Madison have discovered that silicon has unique spin-orbit interactions that can enable the manipulation of qubits using electric fields, without the need for any artificial agents.

Solar cells combining silicon with perovskite have achieved record efficiency of 25.2 percent

06/11/2018  Researchers from EPFL and CSEM have combined silicon- and perovskite-based solar cells. The resulting efficiency of 25.2 percent is a record for this type of tandem cell. Their innovative yet simple manufacturing technique could be directly integrated into existing production lines, and efficiency could eventually rise above 30 percent.

Winbond extends performance of Serial NAND Flash memory with 1Gbit device with maximum data-transfer rate of 83MB/s

06/08/2018  Winbond’s new high-performance Serial NAND technology also supports a two-chip dual quad interface which gives a maximum data transfer rate of 166MB/s.

WIN Semiconductors releases 0.45µm GaN power process for 5G applications

06/08/2018  WIN Semiconductors Corp, the world?'s largest pure-play compound semiconductor foundry, has expanded its gallium nitride (GaN) process capabilities to include a 0.45?m-gate technology that supports current and future 5G applications.

imec demonstrates compact low-power 140GHz CMOS radar with on-chip antennas

06/07/2018  The achievement is an important step in the development of radar-based sensors for a myriad of smart intuitive applications, such as building security, remote health monitoring of car drivers, breathing and heart rate of patients, and gesture recognition for man-machine interaction.

Sales increase 20% year-to-year in April; double-digit annual growth projected for 2018

06/06/2018  Industry forecast projects sales will increase 12.4 percent in 2018 and 4.4 percent in 2019.

Led by Texas Instruments, the industrial semiconductor market grew nearly 12% in 2017

06/06/2018  Analog Devices jumped to second in the market share ranking, after its acquisition of Linear Technology.

Single molecular insulator pushes boundaries of current state of the art

06/06/2018  Breakthrough could pave the way for smaller transistors.

ROHM and GaN Systems join forces for GaN power semiconductors

06/06/2018  ROHM and GaN Systems announced their collaboration in the GaN (gallium nitride) Power Semiconductor business, with the goal of contributing to the continuing evolution of power electronics.

Applied Materials breakthrough accelerates chip performance in the big data and AI era

06/05/2018  Applied Materials, Inc. today announced a breakthrough in materials engineering that accelerates chip performance in the big data and AI era.

NXP brings standard packages to RF power

06/05/2018  New RF power transistors simplify design and manufacturing.

Exagan introduces unique intelligent GaN power solution

06/05/2018  Company showcases G-FET and G-DRIVE products for easy-to-design electrical converters and a small, highly efficient 65-watt USB PD 3.0 charger demonstration.

MIT researchers devise new way to make light interact with matter

06/04/2018  Reducing the wavelength of light could allow it to be absorbed or emitted by a semiconductor, study suggests.

Dow unveils two new silicone adhesives formulated to deliver processing options for device and displays assembly

06/04/2018  Dow Performance Silicones further enhanced design flexibilities and processing options for consumer device and display OEMs today with the addition of DOWSIL™ SE 9100 and DOWSIL™ SE 9160 Adhesives to its portfolio of one-part, room-temperature cure (RTV) silicone solutions.




WEBCASTS



Environment, Safety & Health

Date and time TBD

The semiconductor industry is an acknowledged global leader in promoting environmental sustainability in the design, manufacture, and use of its products, as well as the health and safety of its operations and impacts on workers in semiconductor facilities (fabs). We will examine trends and concerns related to emissions, chemical use, energy consumption and worker safety and health.

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Wafer Processing

Date and time TBD

As the industry moves to 10nm and 7nm nodes, advances in wafer processing – etch, deposition, planarization, implant, cleaning, annealing, epitaxy among others – will be required. Manufacturers are looking for new solutions for sustained strain engineering, FinFETs, FDSOI and multi-gate technologies, 3D NAND, and high mobility transistors.

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