Device Architecture

DEVICE ARCHITECTURE ARTICLES



Micron and Intel announce update to NAND memory joint development program

01/08/2018  Micron and Intel today announced an update to their successful NAND joint development partnership that has helped the companies develop and deliver industry-leading NAND technologies to market.

Room-temperature multiferroic thin films and their properties

01/08/2018  Scientists at Tokyo Institute of Technology (Tokyo Tech) and Tohoku University have developed high-quality GFO epitaxial films and systematically investigated their ferroelectric and ferromagnetic properties. They also demonstrated the room-temperature magnetocapacitance effects of these GFO thin films.

NRL improves optical efficiency in nanophotonic devices

01/05/2018  A team of physicists, headed by the U.S. Naval Research Laboratory (NRL), have demonstrated the means to improve the optical loss characteristics and transmission efficiency of hexagonal boron nitride devices, enabling very small lasers and nanoscale optics.

Xilinx appoints Victor Peng as president and CEO

01/05/2018  Xilinx, Inc. today announced that its board of directors has appointed Victor Peng as president and chief executive officer, effective January 29, 2018.

APAC tops the global RF power semiconductor devices market

01/05/2018  The latest market research report by Technavio on the global radio-frequency (RF) power semiconductor devices market predicts a CAGR of close to 12% during the period 2017-2021.

Nine SEMI Standards committee members recognized at SEMICON Japan for outstanding contributions

01/05/2018  At the SEMI Standards Friendship Party during SEMICON Japan, JRSC recognized the following nine committee members for outstanding contributions to the development of SEMI Standards.

Fabless IC company sales top $100B for first time ever

01/04/2018  Two Chinese companies -- HiSilicon and Unigroup -- are among the top 10 fabless IC sales leaders.

Touchy nanotubes work better when clean

01/04/2018  Rice, Swansea scientists show that decontaminating nanotubes can simplify nanoscale devices.

Surprising changes in semiconductor equipment market share in 2017

01/04/2018  Through three quarters of calendar year 2017, market shares of top semiconductor equipment manufacturers indicate large gains by Tokyo Electron and Lam Research.

Viewing atomic structures of dopant atoms in 3-D relating to electrical activity in a semiconductor

01/02/2018  Scientists at Tokyo Institute of Technology (Tokyo Tech) and their research team involving researchers of JASRI, Osaka University, Nagoya Institute of Technology, and Nara Institute of Science and Technology have just developed a novel approach to determine and visualize the three-dimensional (3D) structure of individual dopant atoms using SPring-8.

eVaderis completes tape-out of MRAM-based, memory-centric MCU demonstrator for next-gen IoT applications

01/02/2018  eVaderis, a semiconductor IP start-up that provides design solutions to improve the functionality, power efficiency and performance of its customers' semiconductor chips, has successfully demonstrated a fully functioning design platform through an ultra-low-power microcontroller (MCU) in Beyond Semiconductor's BA2X product line.

SEMI names new SEMI Japan president

01/02/2018  SEMI today announced the appointment of Masahiko (Jim) Hamajima as president of SEMI Japan.

Qualcomm board unanimously rejects director nominees assembled by Broadcom and Silver Lake partners

12/22/2017  Qualcomm Incorporated today announced that the Qualcomm Board of Directors, following the recommendation of the Board's Governance Committee, has unanimously determined not to nominate any of the 11 candidates assembled by Broadcom Limited and Silver Lake Partners.

UMC announces availability of 40nm SST embedded flash process

12/21/2017  Toshiba MCU ICs are expected to utilize the highly robust, non-volatile memory process.

New JEDEC committee for wide bandgap power semiconductors invites industry participation

12/20/2017  JEDEC Solid State Technology Association announces the successful launch of its newest committee: JC-70 Wide Bandgap Power Electronic Conversion Semiconductors.

Samsung now mass producing industry's first 2nd-generation, 10nm class DRAM

12/20/2017  Samsung Electronics Co., Ltd. announced today that it has begun mass producing the industry’s first 2nd-generation of 10-nanometer class (1y-nm), 8-gigabit (Gb) DDR4 DRAM.

ISS Europe 2018 to focus on winning in the global marketplace

12/20/2017  Electronics manufacturing executives will sharpen their competitive edge in Dublin, Ireland, on 4-6 March at Europe's SEMI Industry Strategy Symposium (ISS Europe).

Acoustic device makes piezoelectrics sing to a different tune

12/20/2017  New embedded transducer approach allows surface acoustic wave device to transmit signals with six times the speed of most commercially used devices.

EPC introduces 40V gallium nitride power transistor eight times smaller than equivalently rated MOSFETs

12/19/2017  EPC2049 GaN power transistor offers power systems designers a 40 V, 5 m? power transistor about 8 times smaller than equivalently rated silicon MOSFETs for point of load converters, LiDAR, and low inductance motor drive.

Cypress appoints Jeannine Sargent to Board of Directors

12/18/2017  Cypress Semiconductor Corp. today announced the appointment of Jeannine Sargent to its board of directors.




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Environment, Safety & Health

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The semiconductor industry is an acknowledged global leader in promoting environmental sustainability in the design, manufacture, and use of its products, as well as the health and safety of its operations and impacts on workers in semiconductor facilities (fabs). We will examine trends and concerns related to emissions, chemical use, energy consumption and worker safety and health.

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Wafer Processing

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As the industry moves to 10nm and 7nm nodes, advances in wafer processing – etch, deposition, planarization, implant, cleaning, annealing, epitaxy among others – will be required. Manufacturers are looking for new solutions for sustained strain engineering, FinFETs, FDSOI and multi-gate technologies, 3D NAND, and high mobility transistors.

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