01/03/2014  Samsung announced today that it has developed the industry’s first eight gigabit, low power double data rate 4, mobile DRAM.

12/20/2013  Mentor Graphics Corporation yesterday announced Greg Helton as president and managing director for Mentor Graphics Japan.

12/20/2013  TowerJazz, a global specialty foundry, and Panasonic Corporation today announced the signing of a definitive agreement to create a joint venture (JV) to manufacture Panasonic’s products, using Panasonic's three semiconductor manufacturing facilities in Japan

12/20/2013  North America-based manufacturers of semiconductor equipment posted $1.24 billion in orders worldwide in November 2013 (three-month average basis) and a book-to-bill ratio of 1.11.

12/19/2013  ARM, a semiconductor supplier, and STMicroelectronics today announced that ST has joined the ARM mbed Project.

12/18/2013  This new contract aims to support Soitec's strategy for the electronics, solar energy and lighting markets.

12/18/2013  ABI Research verified that Intel has a leading position in the mobile processor technology race; launching the first 22nm mobile application processor.

12/18/2013  Universal footprint enables common pinout with current and future high-speed memory.

12/18/2013  M/A-COM Technology Solutions Holdings, Inc., a supplier of high performance RF, microwave, and millimeter wave products, today announced that it has successfully completed its previously announced tender offer to purchase all outstanding shares of common stock of Mindspeed Technologies, Inc. for $5.05 per share in cash.

12/17/2013  Integrated Device Technology, Inc. today announced the appointment of Greg Waters, 53, as President, Chief Executive Officer and board member, effective January 6, 2014. Jeff McCreary, who served as interim CEO since August 2013, will remain a member of the IDT board of directors.

12/17/2013  Micron Technology, Inc., a providers of advanced semiconductor solutions, today announced its collaboration with Broadcom Corporation to develop the industry's first solution designed for customers challenged by an intrinsic DDR3 timing parameter called tFAW, or four activate window.

12/17/2013  Molecularly thin two-dimensional crystals can alleviate the lattice matching restrictions of epitaxial crystalline thin film growth, as reported by researchers in Japan.

12/16/2013  Mindspeed Technologies, Inc., a supplier of semiconductor solutions for network infrastructure, today announced that it has signed a definitive agreement to sell the assets of its wireless infrastructure business unit to Intel Corporation.

12/16/2013  Avago Technologies Limited and LSI Corporation today announced that they have entered into a definitive agreement under which Avago will acquire LSI for $11.15 per share in an all-cash transaction valued at $6.6 billion.

12/13/2013  TSI Semiconductors, LLC, a specialty foundry services company offering flexible technology development and high-quality manufacturing solutions, today announced that Deborah Harvey has joined the company in the newly created position of executive vice president of Worldwide Foundry Sales.

12/12/2013  A new type of transistor that could make possible fast and low-power computing devices for energy-constrained applications such as smart sensor networks, implantable medical electronics and ultra-mobile computing is feasible, according to Penn State researchers.

12/12/2013  The agreement includes a technology license granted by Soitec to IntelliEPI, which may be extended to address future business opportunities in the GaAs market, including equipment transfer.

12/12/2013  Research by Professor Yoshihiro Kubozono at Okayama University has potential for innovative applications of solid picene and organic superconductors, graphene and other functional materials.

12/11/2013  Soitec announced this week that the European Commission has approved the financing for the Guépard program, coordinated by Soitec.

12/10/2013  Micron Technology, Inc. today announced the availability of 45nm Serial NOR Flash memory samples in 512Mb, 1Gb, and 2Gb densities with a standard SPI interface.