GaN use growing in power semiconductors

03/01/2013

GaN has turned out to be the choice for most of the power semiconductor applications and is quickly replacing the existing silicon technology, according to a new report from Research and Markets. The various properties of GaN, such as wider bandgap, high break-down voltage, larger critical electric field, and higher thermal conductivity, let the GaN devices operate at higher voltages, high switching frequencies, handle higher power density, and offer enhanced power efficiency than the pure Si devices. These properties allow the GaN discretes like Schottky diodes, MOSFETs, and the other advanced transistors to operate at much higher voltage levels, which are difficult for the counterpart Si devices. GaN power semiconductors also help in reducing the conduction and switching losses. The major application segments are the inverters (and converters), RF devices, power supply modules, and motor drives.

Solid State Technology | Volume 56 | Issue 2 | February | 2013