Applied's new InVia lays it on thick for 3D IC packaging

05/01/2010

As the semiconductor industry evolves from planar scaling to 3D design to enable shorter interconnect lengths and higher I/O density along with more functionality, Applied Materials' new Producer InVia dielectric deposition (CVD) system targets via-first and via-middle through-silicon via (TSV) integration applications. The new technology enables the deposition of the oxide liner film layer in high-aspect ratio (HAR) TSV structures.

Figure 1. Coverage capability of the Applied InVia. (Source: Applied Materials)

Because the via-middle application requires complete electrical isolation for device integrity, it has a thermal budget requirement ≤400°C, with conformality >50% of field oxide thickness over the full depth of the via (up to 11:1 A/R), sidewall thickness in the range 200nm to 1μm, and leakage current <2nA/cm2, among other requirements (see figure). According to Applied's global product marketing manager, Kedar Sapre, 80% of the company's customers are doing a via-middle application, which, he notes, offers the greatest flexibility.

The new dielectric liner solution is implemented on Applied's Producer GT platform, which the company says has the capability to process up to 8× more wafers/hr at less than half the cost, particularly when depositing very thick liners.—D.V.

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