Product News
02/01/2007
Dual-chamber PEALD tool
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The Stellar 3000 multichamber single-wafer plasma enhanced atomic layer deposition (PEALD) tool targets PEALD processes for high-k dielectric films for DRAM capacitors and metal-insulator-metal capacitors used in embedded DRAM devices and advanced RF analog products. It offers 40 wafers/hour throughput for a typical process, with a two-chamber system that takes up half the cleanroom space of traditional 300mm cluster style ALD or MOCVD tools, the company claims. Two PEALD reactors enable direct plasma on wafer with a minimized reactor volume for 300mm processing. A 200mm version is also available. ASM International NV, Bilthoven, The Netherlands; ph 31/030-229-8411, www.asm.com.
300mm wafer prober
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The Precio automatic 300mm wafer prober incorporates an advanced in-line probe mark inspection technology, based on a new offline high-speed PMI engine, which offers 60% improvement in PMI execution. An auto-leveling feature enables automatic and accurate adjustment of planarity between probe cards and the prober chuck, without requiring external components or controls. The company claims the tool improves wafer exchange times by more than 50%. It supports GPAS, Switch Probe, and Pearl Brush options, with flexible loader configurations. Tokyo Electron America Inc., Austin, TX; ph 512/424-1060, www.tel.com.
193nm ArF excimer laser
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The GT61A ArF excimer laser is for 193nm lithography tools with NA=1.3, offering a repetition rate of 6000 Hz and 30% improvement of spectral bandwidth from its predecessor, the company says. Output is 60W, pulse energy is 10.0 mJ, and spectral bandwidth (95% energy integral) is 0.35pm. The tool uses an injection locked power oscillator system, instead of a master oscillator power amp. A new high-precision measuring instrument and stabilization mechanism are standard. Gigaphoton Inc., Oyama, Japan; ph 81/285-28-8410, www.gigaphoton.com.
High-energy ion implanter
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The third-generation VIISta 3000XP single-wafer high-energy ion implanter uses the same single-wafer endstation, integrated loadlock, dosimetry, closed-loop faraday, and control system as the company’s flagship medium-current VIISta 900XP. It features precise angle and zero degree implant capability, and offers customers higher yield and higher low dose productivity, the company says. Varian Semiconductor Equipment Associates Inc., Gloucester, MA; ph 978/281-2000, www.vsea.com.
Sacrificial oxide etchant
The SelectEtch SE-1100 offers selective etching of oxides in advanced ICs for processes such as high aspect ratio capacitor formation, STI oxide etch, and oxide hardmask removal. Film etch rates clock in at 8000Å/min for phosphosilicate glass (vs. 200Å/min with dilute hydrofluoric acid), 400Å/min for thermal oxides, and 6-7Å/min for silicon nitrides. Doped oxide selectivity is 200:1, 1000:1, and 4000:1 for DCS-nitride, polySi, and TiN, respectively. Sachem Inc., Austin, TX; ph 512/421-4906, www.sacheminc.com.
Charge erase for memories
The RapidCure CE for 300mm manufacturing of flash and other nonvolatile memories cuts erase times by up to a factor of 10× with more complete erase than conventional erase technologies, the company claims. Features include proprietary high-intensity UV light sources, process-specific chamber controls, and programmable wafer heating to neutralize charge buildup in an automated, single-step process. Axcelis Technologies Inc., Beverly, MA; ph 978/787-4266, www.axcelis.com.
High abatement efficiency
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The Marathon 8600 combustion-wet abatement technology can support two three-chamber process tools with a single unit. Its six-inlet design enables PFC abatement of multiple process tools from a single unit. Features include a proprietary oxygen-enriched air module that enables >99% destruction and removal efficiency of PFC gases, and a proprietary N2 sleeved inlet assembly and continuous inward-flow chamber design. Metron Technology, Inc., San Jose, CA; ph 408/563-0647, www.metrontech.com.
Wafer thinning system
The WaveEtch G2 high-throughput thinning system can thin up to 300mm substrates (Si, Ge, III-V, II-VI, photovoltaic, MEMS, glass, quartz, etc.) down to 10µm, with total thickness variation of ±2%, several times more uniform than conventional spin or spray systems, the company claims. Throughput is roughly 100 wafers/hour for 150-200mm wafers (removing 20µm of material with a general etchant), or 50-60 wph removing 10-20µm of material, and throughput can be tripled with additional field-installed process modules. A chemical handling subsystem meters, mixes, recirculates, recycles, and manages multicomponent solutions. Materials and Technologies Corp., Poughkeepsie, NY; ph 845/463-2799, www.matech.com.
Optical profilers
The ninth-generation Wyko NT9300 and NT9800 optical profilers measure topographies from 0.1nm-10mm for noncontact surface metrology for production applications including semiconductor, MEMS, and biomedical devices. Features include a harmonic drive scan mechanism and laser reference signal for Z position feedback. Veeco Instruments Inc., Woodbury, NY; ph 516-677-0200 ext.1472, www.veeco.com.
Ion implant material
The ClusterCarbon implant material for SemEquip’s ClusterIon source system is a molecular carbon species for pre-amorphization implantation and barrier to dopant diffusion for advanced source drain extension formation. It enables higher dopant activation and extremely abrupt, shallow junctions while extending the application life of conventional anneal processes, providing up to 10× throughput gains for low-energy, high-dose implants compared to existing monomer implant platforms, the company claims. SemEquip Inc., North Billerica, MA; ph 978/262-0911, www.semequip.com.
X-ray metrology system
The Crystalx II wide angle X-ray diffraction metrology system provides full wafer measurements of polycrystalline materials typical of 65nm node and below, for crystallographic texture, phase, and relative grain size. A 2D area detector allows for collection of multiple diffraction peaks at multiple angles simultaneously. The detector, X-ray source, and wafer are completely fixed during measurement. Nova Measuring Instruments Ltd., Rehovot, Israel; ph 972/8938-7505, www.nova.co.il.
NAND flash tester
The T5761 and T5761ES NAND flash memory test systems are built on a tester-per-site architecture to maximize efficiency. A 512-device parallel test capacity offers “dramatically higher” throughput than the previous model, the company says, with maximum test speeds of 66MHz. A new error correction function is specially designed for NAND devices, and an upgraded NAND flash memory block management ability skips unneeded blocks without testing them. Advantest Corp., Tokyo, Japan; ph 81/3-3214-7505, www.advantest.co.jp.
Litho simulator for MEMS, FPD
Layout LAB is a simulation platform for mask aligner lithography that lets users virtually model, redesign, and optimize device layouts and processes including mask layout, exposure tool, and process parameters. It also performs accurate 3-D aerial image and resist contour calculation. The software offers 3D visualization and verification, to eliminate the need for producing masks or run layouts in actual production lines. GenISys GmbH, Munich, Germany; ph 49/89-5480-6879, www.genisys-gmbh.com.
300mm wafer-level prober
The PM300WLR is a dedicated probe system that lets chipmakers obtain critical results about the reliability of the device under test at wafer level, instead of after packaging. It is specifically designed for ergonomic, high-termperature, multisite testing, with contact stability guaranteed at temperatures up to 400°C. Features include a large programmable microscope movement and cable handling system. The tools’ design also enables reduced gas consumption, the company claims. SUSS MicroTec Inc., Munich, Germany; ph 49/035-240-730, www.suss.com.