Product News
09/01/2005
1.2NA immersion tool operates in volume at 45nm node
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The Twinscan XT:1700i system is a 193nm immersion scanner capable of volume chip production at the 45nm node. The system has a numerical aperture of 1.2, which reportedly allows chipmakers to improve resolution by 30%, resulting in more chips per wafer or more functionality per chip. The XT:1700i has a throughput of 122wph. Other features include a catadioptric lens design, which combines refractive components with mirrors to create a hyper-NA lens; a maximum field size of 26×33mm; and a polarized illumination system for 45nm resolution. ASML, Veldhoven, The Netherlands; ph 617/638-0022, fax 617/638-0033, e-mail [email protected], www.asml.com.
Plating system is extendible to direct on-barrier apps
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The E-REX 300 ECP electrochemical plating system, for 45nm and 32nm-node technology, eliminates seed film-dependent plating performance with a patented porous resistive element (PRE) and an edge-profile control mechanism that allow uniform deposition across an entire wafer surface, regardless of film-thickness and plating-chemistry variations. For increased flexibility, the system is extendible to direct on-barrier applications without hardware modifications. Other features include high-speed solution introduction and face-up wafer orientation, which reduce defects associated with traditional wafer face-down immersion, and a maintenance-free inert anode. Ebara Technologies Inc., Sacramento, CA; ph 845/321-3505, e-mail [email protected], www.ebaratech.com.
CVD system uses plasma at low temps for batch wafers
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IRad is a 300mm plasma-enhanced batch thermal CVD system for thin-film deposition and is based on the design of the TELFormula variable-load-size reactor. The in situ plasma source allows film-forming chemical reactions to proceed at lower temperatures than those required for thermal CVD, addressing the low-temperature processing requirements of advanced logic and memory devices. IRad’s plasma capability can be combined with molecular layer deposition technology to produce highly conformal, nanometer-scale films (currently SiN and SiBN) and laminates. The physical and electrical properties of the films can be customized to meet 45nm device requirements and beyond. Tokyo Electron Ltd., Tokyo, Japan; ph 81/3/5561-7406, e-mail [email protected], www.tel.com.
Dry strip system performs three critical operations in situ
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The Aspen III eHighlands dry strip system is designed for critical front-end-of-line and back-end-of-line process applications, including photoresist strip over low-k materials. The system, available in 200mm and 300mm versions, features a proprietary inductively coupled plasma source and a bias capability that independently controls ion energy and ion density at low pressures to minimize low-k material damage for sub-90nm processing. The “three-in-one” integration scheme, where low-k strip, barrier removal, and Cu surface treatment processes are performed in situ, reportedly lowers cost-of-ownership. Mattson Technology Inc., Fremont, CA; ph 510/492-6518, fax 510/492-2800, e-mail [email protected], www.mattson.com.