SIMS profiling

09/01/1998

SIMS profiling

This SIMS depth-profiling service is aimed specifically at low-energy implant qualification and thin-layered devices. Using impact energies as low as 100 eV, Applied SIMS Profiling offers a depth resolution of better than 1 nm, and can provide this from within 1 nm of the sample surface to more than a micron in depth. This permits accurate dosimetry and profile shape determination on ultrashallow implants as low as 200 eV boron in silicon. Applied SIMS Profiling, Department of Physics, University of Warwick, Coventry, UK; ph 44/120-352-3871, fax 44/120-369-2016, e-mail G.A. [email protected], www.warwick.ac.uk/asp.