Copper Interconnect deposition

08/01/1998

Copper interconnect deposition

Damascus Complete Copper is a complete range of equipment and processes designed to deliver production-worthy copper interconnect structures. The centerpiece of the system, which includes CVD and PVD technologies, is the SABRE deposition system; this provides void-free copper electrofill of copper interconnects in extremely narrow-geometry, high-aspect-ratio IC structures. SABRE features a cell design that ensures good reproducibility of the copper fill, with film uniformity of 3s, <5% within a wafer. The wafer fixture design eliminates backside contact with the plating bath, thus eliminating backside copper contamination. Throughput is >50 wafer/hour. Damascus also includes the INOVA PVD system for deposition of critical barrier and seed layers, and the SPEED and SEQUEL deposition systems, for the advanced dielectric films needed for copper damascene. These include traditional fluorinated HDP layers with dielectric constants as low as 3.5, SiO2 intermetal dielectric layers, and SiON antireflective layers, as well as several new films such as copper diffusion barriers and hard etch masks. Novellus Systems Inc., San Jose, CA; ph 408/570-2695, www.novellus.com.