Integrated polycide solution for advanced gate applications

02/01/1998

Integrated polycide solution for advanced gate applications

The Polycide xZ Centura system combines polysilicon and tungsten silicide process steps for the fabrication of the high-quality polysilicon and tungsten silicide (polycide) films used in the production of DRAM, flash memory, and logic devices. The system deposits polysilicon and silicide films using sequential processes under vacuum; the film is not exposed to atmosphere during processing, ensuring good adhesion between layers, low particle contamination, and improved yield. A key feature of the tool is its dichlorosilane (DCS) tungsten silicide (WSix) chamber technology. The DCS process allows easy control of the WSix film composition for a conformal film with good step coverage and adhesion, and low stress. The system also features Remote Plasma Clean technology, which converts the source gas to active atoms in a plasma located upstream of the process chamber. These atoms are transported to the chamber, where they clean without attacking its metallic or ceramic parts. The chamber has demonstrated >150 wafers between cleans. Applied Materials Inc., Santa Clara, CA; ph 408/727-5555, fax 408/986-8352, www.AppliedMaterials.com.