Shallow trench isolation

02/01/1998

Shallow trench isolation

This new shallow trench isolation (STI) application set for the TCP 9400SE polysilicon and polycide etch tool offers the choice between a two-chamber, ex situ process with less complex chemistries, and a single-chamber, high-throughput, in situ process option. The STI process can be alternated with other 9400SE applications without changing the tool configuration. The ex situ process separates the initial nitride-oxide mask etch and subsequent silicon trench etch into two chambers to simplify chemistries for high process assurance. While chemistries are more complex, the "in situ nitride mask open" STI process performs both etch steps in the same chamber for higher throughput and lower cost of ownership. Lam Research Corp., Fremont, CA; ph 510/572-6848, fax 510/572-6454.